JP2020088053A5 - - Google Patents

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Publication number
JP2020088053A5
JP2020088053A5 JP2018217241A JP2018217241A JP2020088053A5 JP 2020088053 A5 JP2020088053 A5 JP 2020088053A5 JP 2018217241 A JP2018217241 A JP 2018217241A JP 2018217241 A JP2018217241 A JP 2018217241A JP 2020088053 A5 JP2020088053 A5 JP 2020088053A5
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Japan
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power module
power
conversion circuit
modification
sectional
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JP2018217241A
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English (en)
Japanese (ja)
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JP7045975B2 (ja
JP2020088053A (ja
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Priority to JP2018217241A priority Critical patent/JP7045975B2/ja
Priority claimed from JP2018217241A external-priority patent/JP7045975B2/ja
Priority to US16/583,096 priority patent/US11587797B2/en
Priority to DE102019217489.2A priority patent/DE102019217489A1/de
Priority to CN201911119678.0A priority patent/CN111199960B/zh
Publication of JP2020088053A publication Critical patent/JP2020088053A/ja
Publication of JP2020088053A5 publication Critical patent/JP2020088053A5/ja
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Publication of JP7045975B2 publication Critical patent/JP7045975B2/ja
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JP2018217241A 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置 Active JP7045975B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018217241A JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置
US16/583,096 US11587797B2 (en) 2018-11-20 2019-09-25 Semiconductor device, method for manufacturing the same, and power converter
DE102019217489.2A DE102019217489A1 (de) 2018-11-20 2019-11-13 Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler
CN201911119678.0A CN111199960B (zh) 2018-11-20 2019-11-15 半导体装置及其制造方法、以及电力转换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018217241A JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置

Publications (3)

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JP2020088053A JP2020088053A (ja) 2020-06-04
JP2020088053A5 true JP2020088053A5 (enExample) 2021-01-14
JP7045975B2 JP7045975B2 (ja) 2022-04-01

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JP2018217241A Active JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置

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US (1) US11587797B2 (enExample)
JP (1) JP7045975B2 (enExample)
CN (1) CN111199960B (enExample)
DE (1) DE102019217489A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021132080A (ja) * 2020-02-18 2021-09-09 富士電機株式会社 半導体装置
JP7751178B2 (ja) * 2021-06-17 2025-10-08 ミネベアパワーデバイス株式会社 パワー半導体モジュール
JP7676993B2 (ja) * 2021-06-25 2025-05-15 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2023032733A (ja) * 2021-08-27 2023-03-09 富士電機株式会社 半導体装置
EP4174928A1 (de) * 2021-10-28 2023-05-03 Siemens Aktiengesellschaft Halbleiterbauelement mit gedämpften bondflächen in einem gehäuse mit umspritzten pins
WO2024062633A1 (ja) * 2022-09-22 2024-03-28 株式会社レゾナック 積層体及び積層体の製造方法
JP2024090870A (ja) * 2022-12-23 2024-07-04 株式会社レゾナック 積層体及び積層体の製造方法
EP4586318A3 (en) * 2023-08-21 2025-09-24 Infineon Technologies AG Housing, semiconductor module comprising a housing, and method for assembling a semiconductor module
WO2025204393A1 (ja) * 2024-03-26 2025-10-02 住友電気工業株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268102A (ja) 1993-01-13 1994-09-22 Fuji Electric Co Ltd 樹脂封止形半導体装置
FR2833802B1 (fr) 2001-12-13 2004-03-12 Valeo Electronique Module de puissance et ensemble de modules de puissance
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
EP1595287B1 (de) * 2003-02-13 2006-05-10 Infineon Technologies AG Elektronisches bauteil mit halbleiterchip und verfahren zur herstellung desselben
JP4882495B2 (ja) * 2006-05-09 2012-02-22 富士電機株式会社 半導体装置
DE102010038723B4 (de) * 2010-07-30 2014-08-14 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einer Positioniervorrichtung für ein Substrat
US9236316B2 (en) 2012-03-22 2016-01-12 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
JP2014011236A (ja) 2012-06-28 2014-01-20 Honda Motor Co Ltd 半導体装置、並びに、半導体装置の製造装置及び製造方法
JP6094197B2 (ja) * 2012-12-17 2017-03-15 ダイキン工業株式会社 パワーモジュール
US9754855B2 (en) * 2014-01-27 2017-09-05 Hitachi, Ltd. Semiconductor module having an embedded metal heat dissipation plate
KR20160035916A (ko) * 2014-09-24 2016-04-01 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
JP6813259B2 (ja) * 2015-06-29 2021-01-13 富士電機株式会社 半導体装置

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