JP2020088019A - Power semiconductor module, power conversion device, and manufacturing method of power semiconductor module - Google Patents

Power semiconductor module, power conversion device, and manufacturing method of power semiconductor module Download PDF

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JP2020088019A
JP2020088019A JP2018216022A JP2018216022A JP2020088019A JP 2020088019 A JP2020088019 A JP 2020088019A JP 2018216022 A JP2018216022 A JP 2018216022A JP 2018216022 A JP2018216022 A JP 2018216022A JP 2020088019 A JP2020088019 A JP 2020088019A
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conductor
power semiconductor
semiconductor module
base
heat dissipation
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JP7153538B2 (en
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順平 楠川
Junpei Kusukawa
順平 楠川
雅徳 宮城
Masanori Miyagi
雅徳 宮城
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

To easily perform highly reliable assembly of a first base connected to a semiconductor element and a second base having a heat dissipation function.SOLUTION: A power semiconductor module 1000 includes a semiconductor device 300 including a first conductor 102 electrically connected to an active element 1 and having a potential other than a ground potential, a heat dissipation member 103 formed of a metal material, which is arranged on the side opposite to the first conductor 102 side of an insulating member 101, and a resin 7 that seals the outer peripheral side surfaces of the active element 1, the first conductor 102, and the insulating member 101, and a fixing member 106 made of a metal material, which is joined to the heat dissipation member 103 by melting the metal at a joint 8, and the joint 8 is provided at a position that does not overlap the first conductor 102 in plan view.SELECTED DRAWING: Figure 1

Description

本発明はパワー半導体モジュール、電力変換装置およびパワー半導体モジュールの製造方法に関する。 The present invention relates to a power semiconductor module, a power converter, and a method for manufacturing a power semiconductor module.

スイッチング動作を行うパワー半導体素子を内蔵するパワー半導体モジュールは、変換効率が高いため、民生用、車載用、鉄道用、変電設備等に幅広く利用されている。パワー半導体素子は通電により発熱するため、パワー半導体モジュールには高い放熱性が求められる。特に、車載用途においては、小型、軽量化のため半導体モジュールを冷却するための水等の液体冷媒を用いた高効率な冷却システムが採用されている。
従来のパワー半導体モジュールとして、半導体素子を挟持する一対の導体の上下に配線板を配し、配線板の上下面に放熱用のフィンを有する放熱部材を配置して、上下の放熱部材をボルト等の締結部材を用いて固定する構造が知られている。しかし、この構造は、締結部材による組付けに時間を要し、また、締結部材の緩み等により水密構造の信頼性に欠けるという課題がある。
一方、半導体素子に接続された導電層を有する基板を、一対の冷却ハウジングプレートを溶接シームにより接合して冷却プレートを形成するパワー半導体モジュールが知られている。このパワー半導体モジュールでは、半導体素子および基板の冷却プレート側と反対側の面は露出されており、水密構造とはなっていない（例えば、特許文献１参照）。 A power semiconductor module including a power semiconductor element that performs a switching operation has a high conversion efficiency and is therefore widely used for consumer, vehicle, railway, substation equipment, and the like. Since the power semiconductor element generates heat when energized, the power semiconductor module is required to have high heat dissipation. In particular, for in-vehicle use, a highly efficient cooling system using a liquid refrigerant such as water for cooling the semiconductor module is adopted to reduce the size and weight.
As a conventional power semiconductor module, a wiring board is arranged above and below a pair of conductors that sandwich a semiconductor element, and a heat dissipation member having fins for heat dissipation is arranged on the upper and lower surfaces of the wiring board. There is known a structure for fixing using a fastening member. However, this structure has a problem that it takes time to assemble with the fastening member and the watertight structure lacks reliability due to loosening of the fastening member.
On the other hand, there is known a power semiconductor module in which a substrate having a conductive layer connected to a semiconductor element is joined to a pair of cooling housing plates by a welding seam to form a cooling plate. In this power semiconductor module, the surfaces of the semiconductor element and the substrate opposite to the cooling plate side are exposed and do not have a watertight structure (for example, refer to Patent Document 1).

特開２０１５−５０４６５号公報JP, 2005-50465, A

特許文献１のパワー半導体モジュールには、放熱部材の組付けに関する開示がなく、放熱部材の組付けを容易かつ信頼性の高いものとする構造が記載されていない。 The power semiconductor module of Patent Document 1 does not disclose the assembly of the heat dissipation member, and does not describe the structure that makes the assembly of the heat dissipation member easy and highly reliable.

本発明の一態様によるパワー半導体モジュールは、半導体素子と、一方側の面に前記半導体素子が電気的に接続され、接地電位以外の電位を有する第１導体と、前記第１導体の、前記半導体素子が設けられた前記一方側の面とは反対側の他方側の面に設けられた絶縁部材と、前記絶縁部材の、前記第１導体が設けられた一方側の面とは反対側の他方側の面に設けられ、金属材料により形成された第１ベースと、前記半導体素子と前記第１導体と前記絶縁部材との外周側面を封止する樹脂と、を備えた半導体装置と、前記第１ベースと接合部において金属溶融により接合され、金属材料により形成された第２ベースと、を備え、前記第１ベースと第２ベースとを接合する前記接合部は、平面視で、前記第１導体とは重ならない位置に設けられている。 A power semiconductor module according to an aspect of the present invention includes a semiconductor element, a first conductor to which the semiconductor element is electrically connected to one surface thereof, and which has a potential other than a ground potential, and the semiconductor of the first conductor. An insulating member provided on the other surface opposite to the one surface on which the element is provided, and the other of the insulating member on the opposite side to the one surface on which the first conductor is provided. A first base provided on the side surface and formed of a metal material; and a resin sealing the outer peripheral side surfaces of the semiconductor element, the first conductor, and the insulating member, and 1 base and a second base formed of a metallic material, which is joined by metal fusion in the joining portion, and the joining portion joining the first base and the second base is the first base in plan view. It is provided at a position where it does not overlap with the conductor.

本発明によれば、第１ベースと第２ベースの組付けを容易かつ信頼性の高いものとすることができる。 According to the present invention, the assembling of the first base and the second base can be made easy and reliable.

図１は、本発明のパワー半導体モジュールの第１の実施形態の断面図である。FIG. 1 is a sectional view of a first embodiment of a power semiconductor module of the present invention. 図２（ａ）、（ｂ）は、図１に示すパワー半導体モジュールの製造工程を説明するための断面図である。2A and 2B are cross-sectional views for explaining the manufacturing process of the power semiconductor module shown in FIG. 図３は、本発明のパワー半導体モジュールの第２の実施形態の断面図である。FIG. 3 is a sectional view of a second embodiment of the power semiconductor module of the present invention. 図４（ａ）、（ｂ）は、比較例における、固定部材と放熱部材との接合部の拡大断面図である。FIGS. 4A and 4B are enlarged cross-sectional views of the joint portion between the fixing member and the heat dissipation member in the comparative example. 図５は、比較例のパワー半導体モジュールの断面図である。FIG. 5 is a sectional view of a power semiconductor module of a comparative example. 図６は、実施例と比較例の試験結果を示す図である。FIG. 6 is a diagram showing test results of Examples and Comparative Examples. 図７は、本発明のパワー半導体モジュールの第３の実施形態の断面図である。FIG. 7 is a cross-sectional view of a third embodiment of the power semiconductor module of the present invention. 図８は、本発明のパワー半導体モジュールの第４の実施形態の断面図である。FIG. 8 is a sectional view of the fourth embodiment of the power semiconductor module of the present invention. 図９は、本発明のパワー半導体モジュールの第５の実施形態の断面図である。FIG. 9: is sectional drawing of 5th Embodiment of the power semiconductor module of this invention. 図１０は、本発明のパワー半導体モジュールの第６の実施形態の断面図である。FIG. 10: is sectional drawing of 6th Embodiment of the power semiconductor module of this invention. 図１１は、本発明のパワー半導体モジュールを有する電力変換装置の断面図である。FIG. 11 is a sectional view of a power converter having a power semiconductor module of the present invention.

以下、図面を参照して本発明の実施形態を説明する。以下の記載および図面は、本発明を説明するための例示であって、説明の明確化のため、適宜、省略および簡略化がなされている。本発明は、他の種々の形態でも実施する事が可能である。特に限定しない限り、各構成要素は単数でも複数でも構わない。
図面において示す各構成要素の位置、大きさ、形状、範囲などは、発明の理解を容易にするため、実際の位置、大きさ、形状、範囲などを表していない場合がある。このため、本発明は、必ずしも、図面に開示された位置、大きさ、形状、範囲などに限定されない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description and drawings are examples for explaining the present invention, and are appropriately omitted and simplified for the sake of clarity of the description. The present invention can be implemented in various other modes. Unless otherwise specified, each component may be single or plural.
The position, size, shape, range, etc. of each component shown in the drawings may not represent the actual position, size, shape, range, etc., for easy understanding of the invention. Therefore, the present invention is not necessarily limited to the position, size, shape, range, etc. disclosed in the drawings.

−第１の実施形態−
図１は、本発明のパワー半導体モジュールの第１の実施形態の断面図である。
以下の説明において、Ｘ方向、Ｙ方向（Ｘ方向に直交する方向）およびＺ方向を図示の通りとする。
パワー半導体モジュール１０００は、樹脂７により内部の電子部品を封止した樹脂パッケージである半導体装置３００および一対の固定部材１０６、２０６を備えている。
半導体装置３００は、ほぼ直方体形状、換言すれば、Ｚ方向から見た平面視でほぼ矩形形状を有し、樹脂７から外方に突出する複数の入出力端子３を有する。半導体装置３００の厚さ方向（Ｚ方向）の上下には、一対の放熱部材（第１ベース）１０３、２０３が接合されている。各放熱部材１０３、２０３には、厚さ方向に延在する複数の放熱用のフィン１０４、２０４が設けられている。 -First Embodiment-
FIG. 1 is a sectional view of a first embodiment of a power semiconductor module of the present invention.
In the following description, the X direction, the Y direction (direction orthogonal to the X direction), and the Z direction are as illustrated.
The power semiconductor module 1000 includes a semiconductor device 300, which is a resin package in which an electronic component inside is sealed with resin 7, and a pair of fixing members 106 and 206.
The semiconductor device 300 has a substantially rectangular parallelepiped shape, in other words, a substantially rectangular shape in a plan view when viewed from the Z direction, and has a plurality of input/output terminals 3 protruding outward from the resin 7. A pair of heat dissipation members (first bases) 103 and 203 are joined to the upper and lower sides of the semiconductor device 300 in the thickness direction (Z direction). Each heat dissipation member 103, 203 is provided with a plurality of heat dissipation fins 104, 204 extending in the thickness direction.

半導体装置３００は、パワー半導体素子として、能動素子１およびダイオード２（以下、総称して半導体素子ということもある）を有する。図示はしないが、能動素子１およびダイオード２はスイッチング機能を有する上アーム回路および下アーム回路を構成する。半導体素子は、スイッチング機能を有していれば、特に限定されないが、能動素子１として、ＩＧＢＴ（Insulated Gate Bipolar Transistor）、ＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field-Effect Transistor）等のトランジスタが用いられる。ダイオード２として、ＳＢＤ（Schottoky Diode）、ＦＲＤ（Fast Recovery Diode）等が用いられる。半導体素子を構成する材料としては、Ｓｉが良く用いられるが、ＳｉＣ、ＧａＮ、ＧａＯ等を用いる事もできる。
なお、一つの半導体素子を、複数の半導体素子の集合体として構成してもよい。 The semiconductor device 300 has an active element 1 and a diode 2 (hereinafter sometimes collectively referred to as a semiconductor element) as power semiconductor elements. Although not shown, the active element 1 and the diode 2 form an upper arm circuit and a lower arm circuit having a switching function. The semiconductor element is not particularly limited as long as it has a switching function, but as the active element 1, a transistor such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is used. As the diode 2, an SBD (Schottoky Diode), an FRD (Fast Recovery Diode) or the like is used. Si is often used as a material for forming a semiconductor element, but SiC, GaN, GaO, or the like can also be used.
Note that one semiconductor element may be configured as an aggregate of a plurality of semiconductor elements.

能動素子１の下面全面はコレクタ電極となっており、該コレクタ電極は、−Ｚ方向側に配置されたスペーサ１０５に、はんだ等の接合材４により接合されている。ダイオード２の下面はカソード電極となっており、該カソード電極は、−Ｚ方向側に配置されたスペーサ１０５に、はんだ等の接合材４により接合されている。能動素子１の上面にはエミッタ電極が形成されており、該エミッタ電極は＋Ｚ方向側に配置されたスペーサ２０５に、はんだ等の接合材４により接合されている。ダイオード２の上面にはアノード電極が形成されており、該アノード電極は、＋Ｚ方向側に配置されたスペーサ２０５に、はんだ等の接合材４により接合されている。スペーサ１０５、２０５は、銅やアルミニウム等の金属により形成されている。 The entire lower surface of the active element 1 serves as a collector electrode, and the collector electrode is joined to the spacer 105 arranged on the −Z direction side by a joining material 4 such as solder. The lower surface of the diode 2 serves as a cathode electrode, and the cathode electrode is joined to the spacer 105 arranged on the −Z direction side with a joining material 4 such as solder. An emitter electrode is formed on the upper surface of the active element 1, and the emitter electrode is joined to the spacer 205 arranged on the +Z direction side by a joining material 4 such as solder. An anode electrode is formed on the upper surface of the diode 2, and the anode electrode is joined to the spacer 205 arranged on the +Z direction side with a joining material 4 such as solder. The spacers 105 and 205 are formed of a metal such as copper or aluminum.

スペーサ１０５の−Ｚ方向側の下面には絶縁部材１０１が配置されている。スペーサ１０５と絶縁部材１０１との間には、第２導体１０２ａが設けられている。第２導体１０２ａと絶縁部材１０１とは、ろう付け等により一体に形成されている。第２導体１０２ａは、スペーサ１０５を介して正極側に接続される。絶縁部材１０１上に設けられた第２導体１０２ａの外周には、第２導体１０２ａとは分離された、すなわち、第２導体１０２ａとは絶縁された第１導体１０２が設けられている。第１導体１０２および第２導体１０２ａは、ろう付け等により絶縁部材１０１に一体に形成されている。第１導体１０２には、ワイヤー５により能動素子１のゲート電極が電気的に接続されている。 An insulating member 101 is arranged on the lower surface of the spacer 105 on the −Z direction side. A second conductor 102a is provided between the spacer 105 and the insulating member 101. The second conductor 102a and the insulating member 101 are integrally formed by brazing or the like. The second conductor 102a is connected to the positive electrode side via the spacer 105. A first conductor 102, which is separated from the second conductor 102a, that is, is insulated from the second conductor 102a, is provided on the outer periphery of the second conductor 102a provided on the insulating member 101. The first conductor 102 and the second conductor 102a are integrally formed with the insulating member 101 by brazing or the like. The gate electrode of the active element 1 is electrically connected to the first conductor 102 by the wire 5.

スペーサ２０５の＋Ｚ方向側の上面には絶縁部材２０１が配置されている。スペーサ２０５と絶縁部材２０１との間には、第３導体２０２と第４導体２０２ａが設けられている。第４導体２０２ａは、スペーサ２０５を介して能動素子１のエミッタ電極およびダイオード２のアノード電極に接続されている。スペーサ２０５は、接地電位側となる。第３導体２０２は、不図示のセンサ回路または能動素子１のゲート電極に接続されている。
第３導体２０２および第４導体２０２ａは絶縁部材２０１にろう付け等により一体に形成されている。
絶縁部材１０１、２０１として、例えば、ＡｌＮ（窒化アルミニウム）セラミック基板を用いることができる。 The insulating member 201 is arranged on the upper surface of the spacer 205 on the +Z direction side. A third conductor 202 and a fourth conductor 202a are provided between the spacer 205 and the insulating member 201. The fourth conductor 202a is connected to the emitter electrode of the active element 1 and the anode electrode of the diode 2 via the spacer 205. The spacer 205 is on the ground potential side. The third conductor 202 is connected to a sensor circuit (not shown) or the gate electrode of the active element 1.
The third conductor 202 and the fourth conductor 202a are integrally formed on the insulating member 201 by brazing or the like.
As the insulating members 101 and 201, for example, an AlN (aluminum nitride) ceramic substrate can be used.

第１導体１０２と第３導体２０２および第４導体２０２ａとの間に入出力端子３が、樹脂７に保持されて配置されている。第１導体１０２と入出力端子３とは、はんだ等の接合材４により、接合されている。入出力端子３と第３導体２０２および第４導体２０２ａとの間には、環状のスペーサ６が配置されている。入出力端子３とスペーサ６とは、はんだ等の接合材４により接合されている。第３導体２０２および第４導体２０２ａとスペーサ６とは、はんだ等の接合材４により接合されている。
なお、図示はしないが、入出力端子３は、正極端子、負極端子、交流出力端子および複数の制御用端子等を含んでおり、これら複数の端子がＹ方向に間隔をおいて配列されている。 The input/output terminal 3 is disposed between the first conductor 102 and the third conductor 202 and the fourth conductor 202a while being held by the resin 7. The first conductor 102 and the input/output terminal 3 are joined by a joining material 4 such as solder. An annular spacer 6 is arranged between the input/output terminal 3 and the third conductor 202 and the fourth conductor 202a. The input/output terminal 3 and the spacer 6 are joined by a joining material 4 such as solder. The third conductor 202 and the fourth conductor 202a and the spacer 6 are joined by a joining material 4 such as solder.
Although not shown, the input/output terminal 3 includes a positive electrode terminal, a negative electrode terminal, an AC output terminal, a plurality of control terminals, and the like, and these plurality of terminals are arranged at intervals in the Y direction. ..

樹脂７の−Ｚ方向側の下面と放熱部材１０３の−Ｚ方向側の下面とは面一となっている。固定部材１０６は、樹脂７の下面と放熱部材１０３の下面とに接触した状態で、接合部８において放熱部材１０３に接合されている。接合部８は、固定部材１０６の内周縁および放熱部材１０３の外周縁に沿って全周に亘る環状に形成されている。 The lower surface of the resin 7 on the −Z direction side is flush with the lower surface of the heat dissipation member 103 on the −Z direction side. The fixing member 106 is joined to the heat radiating member 103 at the joining portion 8 while being in contact with the lower surface of the resin 7 and the lower surface of the heat radiating member 103. The joint portion 8 is formed in an annular shape along the entire inner circumference along the inner peripheral edge of the fixing member 106 and the outer peripheral edge of the heat dissipation member 103.

また、樹脂７の＋Ｚ方向側の上面と放熱部材２０３の＋Ｚ方向側の上面とは面一となっている。固定部材２０６は、樹脂７の上面と放熱部材２０３の上面とに接触した状態で接合部８において放熱部材２０３に接合されている。接合部８は、固定部材２０６の内周縁および放熱部材２０３の外周縁に沿って全周に亘る環状に形成されている。固定部材１０６，２０６は、例えば、アルミニウムにより形成される。
なお、固定部材１０６と固定部材２０６は、図示しない冷却ケーシングの一部を構成する。冷却ケーシングは、水等の液体冷媒の冷媒流入口と冷媒流出口とを備えており、冷却ケーシング内部に冷媒の流路を有する流路形成体を構成している。従って、パワー半導体モジュール１０００は冷却ケーシング内を流通する冷媒で冷却される。
なお、接地電位である第４導体２０２ａは、パワー半導体モジュール１０００をキャパシタケース６００（図１１参照）等に組付けて電力変換装置とした状態で、固定部材２０６を介して接地電位となるが、パワー半導体モジュール１０００の状態では、固定部材２０６とは絶縁されている。 Further, the upper surface of the resin 7 on the +Z direction side is flush with the upper surface of the heat dissipation member 203 on the +Z direction side. The fixing member 206 is joined to the heat radiating member 203 at the joining portion 8 while being in contact with the upper surface of the resin 7 and the upper surface of the heat radiating member 203. The joint portion 8 is formed in an annular shape along the entire inner circumference along the inner peripheral edge of the fixing member 206 and the outer peripheral edge of the heat dissipation member 203. The fixing members 106 and 206 are made of, for example, aluminum.
The fixing member 106 and the fixing member 206 form part of a cooling casing (not shown). The cooling casing includes a refrigerant inlet and a refrigerant outlet for a liquid refrigerant such as water, and constitutes a flow passage forming body having a refrigerant flow passage inside the cooling casing. Therefore, the power semiconductor module 1000 is cooled by the refrigerant flowing in the cooling casing.
The fourth conductor 202a, which is at ground potential, is at ground potential via the fixing member 206 when the power semiconductor module 1000 is assembled into the capacitor case 600 (see FIG. 11) or the like to form a power conversion device. In the state of the power semiconductor module 1000, it is insulated from the fixing member 206.

固定部材１０６と放熱部材１０３、および固定部材２０６と放熱部材２０３とは、例えば、レーザ溶接等の金属溶融接合によって接合されている。
固定部材１０６と放熱部材１０３との接合部８は、第１導体１０２の外周の外側に配置されている。換言すれば、固定部材１０６と放熱部材１０３との接合部８は、平面視で第１導体１０２とは重ならない位置に設けられている。固定部材２０６と放熱部材２０３との接合部も同様である。
この構成による効果を、以下の比較例を示す図面を参照して説明する。 The fixing member 106 and the heat radiating member 103, and the fixing member 206 and the heat radiating member 203 are joined by, for example, metal fusion joining such as laser welding.
The joint 8 between the fixing member 106 and the heat dissipation member 103 is arranged outside the outer circumference of the first conductor 102. In other words, the joint portion 8 between the fixing member 106 and the heat dissipation member 103 is provided at a position that does not overlap the first conductor 102 in plan view. The same applies to the joint between the fixing member 206 and the heat dissipation member 203.
The effects of this configuration will be described with reference to the drawings showing the following comparative examples.

図４（ａ）、（ｂ）は、比較例における、固定部材２０６と放熱部材２０３との接合部の拡大断面図である。
図４（ａ）は、レーザ溶接のレーザ出力が大きい場合や、レーザの走査速度が遅い場合に発生する課題を示すための図である。固定部材２０６と放熱部材２０３の接合部８へのレーザによる入射エネルギが大きすぎると、固定部材２０６と放熱部材２０３が溶融されるばかりでなく、絶縁部材２０１および第３導体２０２も溶融される。このため、放熱部材２０３と第３導体２０２が図４（ａ）に示すショート領域９でショートするリスクが高まる。図示はしないが、固定部材１０６と放熱部材１０３との接合についても同様であり、固定部材１０６と放熱部材１０３の接合部８へのレーザによる入射エネルギが大きすぎると、固定部材１０６と放熱部材１０３が溶融されるばかりでなく、絶縁部材１０１および第１導体１０２も溶融され、放熱部材１０３と第１導体１０２がショートするリスクが高まる。 4A and 4B are enlarged cross-sectional views of a joint portion between the fixing member 206 and the heat dissipation member 203 in the comparative example.
FIG. 4A is a diagram for showing a problem that occurs when the laser output of laser welding is large or when the laser scanning speed is slow. If the incident energy of the laser to the joint 8 between the fixing member 206 and the heat dissipation member 203 is too large, not only the fixing member 206 and the heat dissipation member 203 are melted but also the insulating member 201 and the third conductor 202 are melted. Therefore, the risk that the heat dissipation member 203 and the third conductor 202 are short-circuited in the short region 9 shown in FIG. Although not shown, the same applies to the joining between the fixing member 106 and the heat radiating member 103. If the incident energy of the laser on the joining portion 8 between the fixing member 106 and the heat radiating member 103 is too large, the fixing member 106 and the heat radiating member 103 are not shown. Not only is melted, but also the insulating member 101 and the first conductor 102 are melted, increasing the risk of short-circuiting between the heat dissipation member 103 and the first conductor 102.

図４（ｂ）は、固定部材１０６または放熱部材１０３の表面に水分や油脂などの異物が付着している場合や、溶接時のシールドガスの条件が最適でない場合の課題を示すための図である。固定部材１０６または放熱部材１０３の表面に異物が付着していたり、溶接時のシールドガスの条件が最適でなかったりすると、放熱部材１０３と絶縁部材１０１との界面に溶接金属内のガスによりブローホール（空洞）１０が形成されるリスクが高まる。図示はしないが、固定部材２０６と放熱部材２０３との接合についても同様であり、固定部材２０６または放熱部材２０３の表面に異物が付着していたり、溶接時のシールドガスの条件が最適でなかったりすると、放熱部材２０３と絶縁部材２０１との界面にブローホールが形成されるリスクが高まる。 FIG. 4B is a diagram for showing a problem when foreign matter such as moisture or oil adheres to the surface of the fixing member 106 or the heat radiating member 103, or when the conditions of the shield gas at the time of welding are not optimum. is there. If foreign matter adheres to the surface of the fixing member 106 or the heat radiating member 103, or if the condition of the shield gas at the time of welding is not optimal, the gas in the weld metal blows holes at the interface between the heat radiating member 103 and the insulating member 101. The risk that the (cavity) 10 is formed is increased. Although not shown, the same applies to the joining of the fixing member 206 and the heat radiating member 203. For example, foreign matter adheres to the surface of the fixing member 206 or the heat radiating member 203, or the conditions of the shield gas at the time of welding are not optimal. Then, the risk of forming a blowhole at the interface between the heat dissipation member 203 and the insulating member 201 increases.

パワー半導体モジュール１０００を駆動する場合に、第１導体１０２または第３導体２０２と放熱部材１０３、２０３との間にかかる電圧を高くし、また、放熱性を向上するために、絶縁部材１０１、２０１の厚さを薄くすることが有利である。しかし、絶縁部材１０１、２０１の厚さを薄くするほど、図４（ａ）に示すように、放熱部材１０３、２０３と第１導体１０２または第３導体２０２とが電気的にショートするリスクが高まる。
また、図４（ｂ）に示すようなブローホールが発生すると、ブローホールに高い電界がかかり、部分放電が発生し、絶縁部材１０１、２０１を徐々に劣化させる。ブローホールにかかる電界は、接合部８と、第１導体１０２または第３導体２０２間との距離が小さい程、大きくなる。 When driving the power semiconductor module 1000, in order to increase the voltage applied between the first conductor 102 or the third conductor 202 and the heat dissipation members 103 and 203, and to improve heat dissipation, the insulating members 101 and 201 are used. It is advantageous to reduce the thickness of the. However, as the thickness of the insulating members 101 and 201 is reduced, the risk that the heat dissipation members 103 and 203 and the first conductor 102 or the third conductor 202 are electrically short-circuited increases as shown in FIG. 4A. ..
Further, when a blowhole as shown in FIG. 4B is generated, a high electric field is applied to the blowhole, partial discharge is generated, and the insulating members 101 and 201 are gradually deteriorated. The electric field applied to the blowhole becomes larger as the distance between the joint portion 8 and the first conductor 102 or the third conductor 202 becomes smaller.

本実施形態では、上述したように、固定部材１０６と放熱部材１０３との接合部８は、平面視で第１導体１０２とは重ならない位置に設けられている。固定部材２０６と放熱部材２０３との接合部８は、平面視で第３導体２０２とは重ならない位置に設けられている。このため、固定部材１０６、２０６と放熱部材１０３、２０３の接合部８へのレーザによる入射エネルギが大きすぎる場合でも、放熱部材１０３と第１導体１０２とのショート、および放熱部材２０３と第３導体２０２とのショートの発生を抑制することができる。また、放熱部材１０３、２０３と絶縁部材１０１、２０１との界面にブローホールが形成されるような条件下でも、ブローホールにかかる電界が低減され、絶縁部材１０１、２０１の劣化を抑制することができる。 In the present embodiment, as described above, the joint portion 8 between the fixing member 106 and the heat dissipation member 103 is provided at a position that does not overlap the first conductor 102 in plan view. The joint portion 8 between the fixing member 206 and the heat dissipation member 203 is provided at a position that does not overlap the third conductor 202 in plan view. Therefore, even when the incident energy of the laser to the joint 8 between the fixing members 106 and 206 and the heat dissipation members 103 and 203 is too large, the heat dissipation member 103 and the first conductor 102 are short-circuited, and the heat dissipation member 203 and the third conductor are shorted. The occurrence of a short circuit with 202 can be suppressed. Further, even under the condition that blowholes are formed at the interfaces between the heat dissipation members 103 and 203 and the insulating members 101 and 201, the electric field applied to the blowholes is reduced and deterioration of the insulating members 101 and 201 can be suppressed. it can.

図２（ａ）、（ｂ）は、図１に示すパワー半導体モジュールの製造工程を説明するための断面図である。図２（ａ）、（ｂ）を参照して、図１に示すパワー半導体モジュール１０００の製造方法の一例を説明する。
予め、絶縁部材１０１の上面に第１導体１０２および第２導体１０２ａを、また、下面に、放熱用のフィン１０４が形成された放熱部材１０３を、例えば、ろう付け等により一体に形成しておく。第１導体１０２および第２導体１０２ａを形成するには、絶縁部材１０１の上面全体に導体を形成し、フォトリソグラフィ技術等を用いて、所定パターンの第１導体１０２および第２導体１０２ａを形成する。また、放熱用のフィン１０４は、放熱部材１０３に溶接等により接合する。
絶縁部材１０１としては、ＡｌＮセラミック（窒化アルミニウム）基板を用いることができる。また、第１導体１０２、第２導体１０２ａおよび放熱部材１０３の材料としては、アルミニウムを用いることができる。 2A and 2B are cross-sectional views for explaining the manufacturing process of the power semiconductor module shown in FIG. An example of a method for manufacturing the power semiconductor module 1000 shown in FIG. 1 will be described with reference to FIGS.
In advance, the first conductor 102 and the second conductor 102a are formed on the upper surface of the insulating member 101, and the heat dissipation member 103 having the fins 104 for heat dissipation formed on the lower surface are integrally formed by, for example, brazing. .. To form the first conductor 102 and the second conductor 102a, the conductor is formed on the entire upper surface of the insulating member 101, and the first conductor 102 and the second conductor 102a having a predetermined pattern are formed by using a photolithography technique or the like. .. The fins 104 for heat dissipation are joined to the heat dissipation member 103 by welding or the like.
An AlN ceramic (aluminum nitride) substrate can be used as the insulating member 101. Aluminum can be used as the material for the first conductor 102, the second conductor 102a, and the heat dissipation member 103.

本実施形態では、絶縁部材１０１と放熱部材１０３との間にろう材のみが介在する構造である。通常、絶縁部材１０１と放熱部材１０３との間に金属層を設け、絶縁部材１０１と金属層、および金属層と放熱部材１０３を、それぞれ、ろう材や放熱グリース、あるいははんだ等により接合する構造が採用される。本実施形態では、このような構造に比し、絶縁部材１０１と放熱部材１０３との間に介在される部材が少ないので、熱抵抗が小さく、放熱性を向上することができる。 In this embodiment, only the brazing material is interposed between the insulating member 101 and the heat dissipation member 103. Usually, a structure is provided in which a metal layer is provided between the insulating member 101 and the heat radiating member 103, and the insulating member 101 and the metal layer, and the metal layer and the heat radiating member 103 are respectively joined by a brazing material, heat radiating grease, solder, or the like. Adopted. In this embodiment, as compared with such a structure, the number of members interposed between the insulating member 101 and the heat dissipation member 103 is small, so that the thermal resistance is small and the heat dissipation can be improved.

なお、絶縁部材１０１と放熱部材１０３との接合は、溶湯接合法により接合してもよい。溶湯接合法は、放熱用のフィン１０４および放熱部材１０３を形成するための金型のキャビティ内に溶融したアルミニウム等の金属を入れ、例えば、ＡｌＮセラミック基板等により形成された絶縁部材１０１を、溶融したアルミニウム等の金属に接合する方法である。この方法によれば、絶縁部材１０１と放熱部材１０３との熱抵抗をさらに小さくすることができる。 The insulating member 101 and the heat dissipation member 103 may be joined by a molten metal joining method. In the molten metal joining method, molten metal such as aluminum is put into a cavity of a mold for forming the heat dissipation fin 104 and the heat dissipation member 103, and the insulating member 101 formed of, for example, an AlN ceramic substrate is melted. It is a method of joining to a metal such as aluminum. According to this method, the thermal resistance between the insulating member 101 and the heat dissipation member 103 can be further reduced.

次に、第２導体１０２ａ上にスペーサ１０５を、はんだ等の接合材４により接合する。そして、スペーサ１０５上に、能動素子１、ダイオード２を、それぞれ、はんだ等の接合材４により接合する。また、第１導体１０２上に、入出力端子３をはんだ等の接合材４により接合する。 Next, the spacer 105 is joined to the second conductor 102a by the joining material 4 such as solder. Then, the active element 1 and the diode 2 are bonded onto the spacer 105 with a bonding material 4 such as solder. Further, the input/output terminal 3 is joined to the first conductor 102 by the joining material 4 such as solder.

さらに、能動素子１のゲート電極と第１導体１０２とを、ワイヤーボンディング法を用いて、ワイヤー５により電気的に接続する。 Further, the gate electrode of the active element 1 and the first conductor 102 are electrically connected by the wire 5 using the wire bonding method.

その後、図２（ａ）に示すように、能動素子１上およびダイオード２上に、スペーサ１０５を、はんだ等の接合材４により接合すると共に、入出力端子３上にスペーサ６を、はんだ等の接合材４により接合する。
図２（ｂ）を参照して、図２（ａ）に続く製造工程を説明する。予め、絶縁部材２０１の下面に第３導体２０２を、絶縁部材２０１の上面に、放熱用のフィン２０４が形成された放熱部材２０３を、例えば、ろう付け等により一体に形成しておく。そして、絶縁部材２０１が一体に形成された第３導体２０２を、スペーサ２０５上およびスペーサ６上に、はんだ等の接合材４により接合する。図２（ｂ）は、ここまでの製造工程で形成された封止前のパワー半導体モジュール中間体を示す。 After that, as shown in FIG. 2A, the spacer 105 is joined to the active element 1 and the diode 2 by the joining material 4 such as solder, and the spacer 6 is placed on the input/output terminal 3 such as solder. It joins by the joining material 4.
The manufacturing process following FIG. 2A will be described with reference to FIG. In advance, the third conductor 202 is integrally formed on the lower surface of the insulating member 201, and the heat radiating member 203 having the heat radiating fins 204 is integrally formed on the upper surface of the insulating member 201 by, for example, brazing. Then, the third conductor 202 integrally formed with the insulating member 201 is joined to the spacer 205 and the spacer 6 by the joining material 4 such as solder. FIG. 2B shows a power semiconductor module intermediate body before the sealing, which is formed by the manufacturing process up to this point.

次に、図２（ｂ）に示す封止前のパワー半導体モジュールを金型のキャビティ内に設置し、例えば、トランスファーモールド等のモールド成型により樹脂封止する。すなわち、図２（ｂ）に示すパワー半導体モジュール中間体は、第１導体１０２、第２導体１０２ａ、第３導体２０２、第４導体２０２ａ、絶縁部材１０１、２０１、放熱部材１０３、２０３の外周および入出力端子３の一部を覆うように樹脂７により封止される。樹脂封止に際して、入出力端子３の先端側が樹脂で覆われないように、すなわち、入出力端子３の先端側が外部に露出されるように封止する。樹脂７は、絶縁部材１０１と絶縁部材２０１との間におけるスペーサ６の内側にも充填され、能動素子１およびダイオード２の表面を覆う。 Next, the unsealed power semiconductor module shown in FIG. 2B is placed in the cavity of the mold, and is resin-sealed by molding such as transfer molding. That is, the power semiconductor module intermediate shown in FIG. 2B has the outer periphery of the first conductor 102, the second conductor 102a, the third conductor 202, the fourth conductor 202a, the insulating members 101 and 201, the heat radiating members 103 and 203, and It is sealed with resin 7 so as to cover a part of the input/output terminal 3. At the time of resin sealing, the input/output terminal 3 is sealed so that the tip side thereof is not covered with the resin, that is, the tip side of the input/output terminal 3 is exposed to the outside. The resin 7 is also filled inside the spacer 6 between the insulating member 101 and the insulating member 201, and covers the surfaces of the active element 1 and the diode 2.

その後、放熱部材１０３の下面に固定部材１０６を位置決めして、放熱部材１０３の外周縁と固定部材１０６の内周縁が重なる領域にレーザを照射して、放熱部材１０３と固定部材１０６とを金属溶融接合する。上述したように、放熱部材１０３と固定部材１０６とが金属溶融接合された接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられる。
同様に、放熱部材２０３の上面に固定部材２０６を位置決めして、放熱部材２０３の外周縁と固定部材２０６の内周縁が重なる領域にレーザを照射して、放熱部材２０３と固定部材２０６とを金属溶融接合する。
これにより、図１に図示されるパワー半導体モジュール１０００が得られる。 Then, the fixing member 106 is positioned on the lower surface of the heat radiating member 103, and the region where the outer peripheral edge of the heat radiating member 103 and the inner peripheral edge of the fixing member 106 overlap each other is irradiated with a laser to melt the heat radiating member 103 and the fixed member 106 with metal. To join. As described above, the joint portion 8 in which the heat dissipation member 103 and the fixing member 106 are metal-melt-bonded to each other is provided at a position not overlapping the first conductor 102 in plan view.
Similarly, the fixing member 206 is positioned on the upper surface of the heat dissipating member 203, and the region where the outer peripheral edge of the heat dissipating member 203 and the inner peripheral edge of the fixing member 206 overlap each other is irradiated with a laser so that the heat dissipating member 203 and the fixing member 206 are made of metal. Fusion bonding.
As a result, the power semiconductor module 1000 shown in FIG. 1 is obtained.

上記方法では、放熱部材１０３、２０３を固定部材１０６、２０６に金属溶融接合により接合するので、放熱部材１０３と放熱部材２０３とを、ボルト等の締結部材を用いて組付ける方法に比し、部材が少ない。このため、部品点数が節減され、また、組付け時間も短縮され、コストを低減することができる。また、締結部材の締め付け不良や緩みにより水密性が損なわれることが無いので、水密性の信頼性を向上することができる。 In the above method, since the heat dissipation members 103 and 203 are joined to the fixing members 106 and 206 by metal fusion joining, compared with the method of assembling the heat dissipation member 103 and the heat dissipation member 203 using fastening members such as bolts, Less is. Therefore, the number of parts can be reduced, the assembly time can be shortened, and the cost can be reduced. Further, since the watertightness is not impaired by the fastening failure or loosening of the fastening member, the reliability of the watertightness can be improved.

［実施例１］
図２（ａ）、（ｂ）に示される手順により、図１に図示されるパワー半導体モジュール１０００を、下記の条件で作製した。
絶縁部材１０１、１０２を、板厚０．６３５ｍｍのＡｌＮセラミック基板を用いて形成した。第１〜第４導体１０２、１０２ａ、２０２、２０２ａは、厚さ０．４ｍｍのアルミニウム材により形成した。樹脂７による封止は、トランスファーモールドにより行った。固定部材１０６、２０６は、厚さ１．５ｍｍのアルミニウム板により形成した。固定部材１０６、２０６と放熱部材１０３、２０３との接合は、レーザ溶接により行った。
レーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度８ｍ／ｍｉｎとした。 [Example 1]
By the procedure shown in FIGS. 2A and 2B, the power semiconductor module 1000 shown in FIG. 1 was manufactured under the following conditions.
The insulating members 101 and 102 were formed using an AlN ceramic substrate having a plate thickness of 0.635 mm. The first to fourth conductors 102, 102a, 202, 202a were formed of an aluminum material having a thickness of 0.4 mm. The sealing with the resin 7 was performed by transfer molding. The fixing members 106 and 206 were formed of an aluminum plate having a thickness of 1.5 mm. The fixing members 106 and 206 and the heat radiating members 103 and 203 were joined by laser welding.
The laser welding conditions were a laser output of 1700 W and a scanning speed of 8 m/min.

［実施例２］
実施例１とは、レーザ溶接の条件のみを変え、他の条件はすべて同一として実施例２のパワー半導体モジュール１０００を作製した。
実施例２のレーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度６ｍ／ｍｉｎとした。 [Example 2]
A power semiconductor module 1000 of Example 2 was manufactured under the same conditions as those of Example 1 except that the laser welding conditions were changed.
The laser welding conditions of Example 2 were a laser output of 1700 W and a scanning speed of 6 m/min.

［比較例］
図５は、比較例のパワー半導体モジュールの断面図である。
比較例として、図５に図示するパワー半導体モジュール１０００Ｒを作製した。
比較例のパワー半導体モジュール１０００Ｒは、図１に図示するパワー半導体モジュール１０００に対し、固定部材１０６と放熱部材１０３との接合部８が、第１導体１０２と、平面視で重なる領域に設けられており、固定部材２０６と放熱部材２０３との接合部８が、第３導体２０２と、平面視で重なる領域に設けられている点で相違する。
比較例のパワー半導体モジュール１０００Ｒの他の構成は、すべて図１に示す第１の実施形態のパワー半導体モジュール１０００と同様である。
実施例１とは、レーザ溶接の条件のみを変え、他の条件はすべて同一として比較例１、比較例２および比較例３のパワー半導体モジュール１０００Ｒを作製した。 [Comparative example]
FIG. 5 is a sectional view of a power semiconductor module of a comparative example.
As a comparative example, a power semiconductor module 1000R shown in FIG. 5 was manufactured.
In the power semiconductor module 1000R of the comparative example, in the power semiconductor module 1000 shown in FIG. 1, the joint 8 between the fixing member 106 and the heat radiating member 103 is provided in a region overlapping the first conductor 102 in a plan view. However, the difference is that the joint portion 8 between the fixing member 206 and the heat dissipation member 203 is provided in a region overlapping the third conductor 202 in a plan view.
All other configurations of the power semiconductor module 1000R of the comparative example are the same as those of the power semiconductor module 1000 of the first embodiment shown in FIG.
The power semiconductor module 1000R of Comparative Example 1, Comparative Example 2 and Comparative Example 3 was manufactured under the same conditions as in Example 1, except that the laser welding conditions were the same.

［比較例１］
比較例１のレーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度１０ｍ／ｍｉｎとした。
［比較例２］
比較例２のレーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度８ｍ／ｍｉｎとした。
［比較例３］
比較例３のレーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度６ｍ／ｍｉｎとした。 [Comparative Example 1]
The laser welding conditions of Comparative Example 1 were a laser output of 1700 W and a scanning speed of 10 m/min.
[Comparative example 2]
The laser welding conditions of Comparative Example 2 were a laser output of 1700 W and a scanning speed of 8 m/min.
[Comparative Example 3]
The laser welding conditions of Comparative Example 3 were a laser output of 1700 W and a scanning speed of 6 m/min.

実施例１、２のパワー半導体モジュール１０００、および比較例１〜３のパワー半導体モジュール１０００Ｒに対し、以下に示す（１）接合状態の検査、（２）耐電圧試験、（３）部分放電試験を実施し、本実施形態の効果を検証した。
（１）接合状態の検査
パワー半導体モジュール１０００、１０００Ｒ完成後に、放熱部材（第１ベース）１０３と固定部材（第２ベース）１０６との接合状態を、接続部の断面を切断し、観察することにより実施した。 The power semiconductor module 1000 of Examples 1 and 2 and the power semiconductor module 1000R of Comparative Examples 1 to 3 were subjected to the following (1) inspection of junction state, (2) withstand voltage test, and (3) partial discharge test. It carried out and verified the effect of this embodiment.
(1) Inspection of Joining State After the power semiconductor modules 1000 and 1000R are completed, the joining state of the heat dissipation member (first base) 103 and the fixing member (second base) 106 is observed by cutting the cross section of the connecting portion. It was carried out by.

（２）耐電圧試験
放熱部材１０３と、能動素子１の全端子および第１導体１０２とは、電気的に絶縁されていなければならない。必要な耐電圧が確保できているかを確認するため、耐電圧試験を実施した。
耐電圧試験は、能動素子１およびダイオード２との入出力端子３の全ての端子を同電位となるように短絡し、全端子と放熱部材１０３との間にＡＣ電圧５ｋｖｒｍｓを１分間印加し、耐電圧が確保できているかを確認した。 (2) Withstanding Voltage Test The heat dissipation member 103 and all the terminals of the active element 1 and the first conductor 102 must be electrically insulated. A withstand voltage test was conducted to confirm that the required withstand voltage was secured.
In the withstand voltage test, all terminals of the input/output terminal 3 of the active element 1 and the diode 2 are short-circuited so as to have the same potential, and an AC voltage of 5 kvrms is applied for 1 minute between all the terminals and the heat dissipation member 103, It was confirmed that the withstand voltage was secured.

（３）部分放電試験
固定部材１０６と放熱部材１０３とを溶接する際、絶縁部材１０１と放熱部材１０３との界面付近にブローホールが形成され、電圧印加時にブローホールへの電界が高くなると部分放電が発生する。パワー半導体モジュール１０００の絶縁信頼性を確保するには、部分放電の発生を防止する必要がある。部分放電の発生を評価するために部分放電試験を実施した。
部分放電試験は、能動素子１およびダイオード２との入出力端子３の全ての端子を同電位となるように短絡し、全端子と放熱部材１０３との間にＡＣ電圧０Ｖｒｍｓを印加し、徐々に電圧を５ｋＶｒｍｓまで上昇させ、５ｋＶｒｍｓで１分間保持し、電圧印加時の最大放電電荷量を測定した。 (3) Partial Discharge Test When welding the fixing member 106 and the heat radiating member 103, a blow hole is formed near the interface between the insulating member 101 and the heat radiating member 103, and a partial discharge occurs when the electric field to the blow hole becomes high when voltage is applied. Occurs. In order to ensure the insulation reliability of the power semiconductor module 1000, it is necessary to prevent the occurrence of partial discharge. A partial discharge test was performed to evaluate the occurrence of partial discharge.
In the partial discharge test, all terminals of the active element 1 and the input/output terminal 3 of the diode 2 are short-circuited so as to have the same potential, and an AC voltage of 0 Vrms is applied between all the terminals and the heat dissipation member 103, and gradually. The voltage was increased to 5 kVrms, the voltage was maintained at 5 kVrms for 1 minute, and the maximum discharge charge amount when voltage was applied was measured.

上記検査結果を図６に示す。
（１）接合状態の検査結果
比較例１では、部分的に固定部材１０６と放熱部材１０３とが接合されていない部分が観察された。これは、比較例１では、走査速度が、他のいずれの実施例および比較例よりも速い１０ｍ／ｍｉｎであったため、入熱が小さく、接合されない部分が残ったと考えられる。
これに対し比較例２、３および実施例１、２では、観察範囲内全体に亘って、固定部材１０６と放熱部材１０３との接合は良好であった。 The inspection result is shown in FIG.
(1) Inspection Result of Bonded State In Comparative Example 1, a part where the fixing member 106 and the heat dissipation member 103 were not joined was observed. This is considered to be because in Comparative Example 1, the scanning speed was 10 m/min, which was faster than that of any other Examples and Comparative Examples, and thus the heat input was small and the unbonded portions remained.
On the other hand, in Comparative Examples 2 and 3 and Examples 1 and 2, the bonding between the fixing member 106 and the heat dissipation member 103 was good over the entire observation range.

（２）耐電圧試験結果
（耐電圧試験）
耐電圧試験の結果、比較例１と２、および実施例１、２では、５ｋＶｒｍｓで１分間、絶縁破壊することはなく、耐電圧試験はクリアした。しかし、比較例３では、放熱部材１０３と固定部材１０６とが電気的にショートしており、耐電圧試験は満足できなかった。 (2) Withstanding voltage test results (withstanding voltage test)
As a result of the withstand voltage test, in Comparative Examples 1 and 2, and Examples 1 and 2, there was no dielectric breakdown at 5 kVrms for 1 minute, and the withstand voltage test was cleared. However, in Comparative Example 3, the heat dissipation member 103 and the fixing member 106 were electrically short-circuited, and the withstand voltage test could not be satisfied.

（３）部分放電試験結果
部分放電試験の結果、比較例１および実施例１、２では、部分放電の最大放電電荷量は検出限界の１ｐＣ以下であった。これに対し、比較例２では、部分放電の最大放電電荷量１００ｐＣを検出した。比較例２では、固定部材１０６と放熱部材１０３の接続は良好になされていたが、観察を実施しなかった部分でブローホールが形成され、その部分で部分放電が発生した可能性がある。また比較例３では、耐電圧試験で説明したとおり、放熱部材１０３と固定部材１０６とがショートされており、電圧を印加することができなかった。 (3) Partial Discharge Test Result As a result of the partial discharge test, in Comparative Example 1 and Examples 1 and 2, the maximum discharge charge amount of the partial discharge was 1 pC or less, which is the detection limit. On the other hand, in Comparative Example 2, the maximum discharge charge amount of partial discharge of 100 pC was detected. In Comparative Example 2, the fixing member 106 and the heat radiating member 103 were connected well, but there is a possibility that blowholes were formed in the portions that were not observed and partial discharge occurred in those portions. Further, in Comparative Example 3, as described in the withstand voltage test, the heat dissipation member 103 and the fixing member 106 were short-circuited, and the voltage could not be applied.

（試験結果の総合判定）
以上の試験の結果、総合判定は、図６にも示されている通り、比較例１〜３は、いずれかの試験においてＮＧであった。これに対し、実施例１、２では、すべての試験結果が良好であった。これにより、本実施形態による効果を確認することができた。 (Comprehensive judgment of test results)
As a result of the above test, the overall judgment was NG in any of the tests in Comparative Examples 1 to 3 as shown in FIG. 6. On the other hand, in Examples 1 and 2, all the test results were good. As a result, the effect of this embodiment could be confirmed.

上記第１の実施形態によれば、下記の効果を奏する。
（１）パワー半導体モジュール１０００は、能動素子（半導体素子）１と、一方側の面に能動素子１が電気的に接続され、接地電位以外の電位を有する第１導体１０２と、第１導体１０２の、能動素子１が設けられた一方側の面とは反対側の他方側の面に設けられた絶縁部材１０１と、絶縁部材１０１の、第１導体１０２が設けられた一方側の面とは反対側の他方側の面に設けられ、金属材料により形成された放熱部材（第１ベース）１０３と、半導体素子１と第１導体１０２と絶縁部材１０１との外周側面を封止する樹脂７と、を備えた半導体装置３００と、第１ベース１０３と接合部８において金属溶融により接合され、金属材料により形成された固定部材（第２ベース）１０６と、を備え、第１ベース１０３と第２ベース１０６とを接合する接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられている。このため、固定部材１０６と放熱部材１０３との接合強度が向上すると共に電気的なショートが抑制され、また、ブローホール発生に起因する絶縁部材１０１の劣化を抑制することができ、固定部材１０６と放熱部材１０３との接合の信頼性を向上することができる。また、固定部材１０６と放熱部材１０３との組付けを、ボルト等の締結部材を用いずに行うことができるので、部品点数が削減され、かつ、組付け作業が容易となるのでコストダウンを図ることができる。 According to the said 1st Embodiment, the following effects are produced.
(1) The power semiconductor module 1000 includes an active element (semiconductor element) 1, a first conductor 102 electrically connected to one surface of the active element 1 and having a potential other than a ground potential, and a first conductor 102. Of the insulating member 101 provided on the other surface opposite to the one surface provided with the active element 1 and the one surface of the insulating member 101 provided with the first conductor 102. A heat dissipation member (first base) 103 which is provided on the other surface on the opposite side and is made of a metal material, and a resin 7 which seals the outer peripheral side surfaces of the semiconductor element 1, the first conductor 102 and the insulating member 101. And a fixing member (second base) 106 formed of a metal material, which is joined to the first base 103 by metal fusion at the joint portion 8, and is provided with the first base 103 and the second base. The joint portion 8 that joins the base 106 is provided at a position that does not overlap the first conductor 102 in plan view. For this reason, the bonding strength between the fixing member 106 and the heat dissipation member 103 is improved, an electrical short circuit is suppressed, and the deterioration of the insulating member 101 due to the occurrence of blow holes can be suppressed. The reliability of joining with the heat dissipation member 103 can be improved. Further, since the fixing member 106 and the heat radiating member 103 can be assembled without using a fastening member such as a bolt, the number of parts can be reduced and the assembling work can be facilitated to reduce the cost. be able to.

（２）パワー半導体モジュール１０００は、また、半導体装置３００を構成する能動素子１の他面側に配置された絶縁部材２０１と、絶縁部材２０１の第１導体１０２が配置された側とは反対側に配置された、金属材料により形成された放熱部材（別の第１ベース）２０３と、を備え、さらに、第１ベース２０３と接合部８において金属溶融により接続された、金属材料により形成された固定部材（別の第２ベース）２０６を有する。このため、固定部材１０６と固定部材２０６とにより内部に冷媒の流路を有する流路形成体を構成することができ、半導体装置３００に流路形成体が金属溶融接合により一体化されたパワー半導体モジュール１０００を構成することが可能となる。 (2) In the power semiconductor module 1000, the insulating member 201 arranged on the other surface side of the active element 1 configuring the semiconductor device 300 and the side opposite to the side of the insulating member 201 on which the first conductor 102 is arranged. A heat dissipating member (another first base) 203 formed of a metal material, which is disposed in the first base 203 and is connected to the first base 203 at the joint portion 8 by metal fusion. It has a fixing member (another second base) 206. Therefore, the fixing member 106 and the fixing member 206 can form a flow path forming body having a flow path for the refrigerant therein, and the flow path forming body is integrated with the semiconductor device 300 by metal fusion bonding. It is possible to configure the module 1000.

−第２の実施形態−
図３は、本発明のパワー半導体モジュールの第２の実施形態の断面図である。
第２の実施形態のパワー半導体モジュール１０００は、固定部材１０７、２０７が、放熱用のフィン１０４、２０４を覆うカバー部１０７ａ、２０７ａを有する点で、第１の実施形態とは相違する。
固定部材１０７、２０７のカバー部１０７ａ、２０７ａは、放熱部材１０３、２０３に接合される接合部８の内周側近傍から放熱用のフィン１０４、２０４の先端部に向かって、内周側に向けて傾斜する傾斜状に延出され、すべての放熱用のフィン１０４、２０４の上部を覆っている。図３では、固定部材１０７、２０７のカバー部１０７ａ、２０７ａの内面が放熱用のフィン１０４、２０４の先端面に接触する構造として例示されている。しかし、固定部材１０７、２０７のカバー部１０７ａ、２０７ａの内面と放熱用のフィン１０４、２０４の先端面との間に隙間が設けられた構造としてもよい。 -Second Embodiment-
FIG. 3 is a sectional view of a second embodiment of the power semiconductor module of the present invention.
The power semiconductor module 1000 of the second embodiment is different from that of the first embodiment in that the fixing members 107 and 207 have cover portions 107a and 207a that cover the fins 104 and 204 for heat dissipation.
The cover portions 107a and 207a of the fixing members 107 and 207 are directed toward the inner peripheral side from the vicinity of the inner peripheral side of the joint portion 8 joined to the heat radiating members 103 and 203 toward the tip portions of the fins 104 and 204 for heat radiation. The fins 104 and 204 for heat dissipation cover the upper portions of the fins 104 and 204 for heat dissipation. FIG. 3 illustrates the structure in which the inner surfaces of the cover portions 107a and 207a of the fixing members 107 and 207 are in contact with the tip surfaces of the fins 104 and 204 for heat dissipation. However, a structure may be used in which a gap is provided between the inner surfaces of the cover portions 107a and 207a of the fixing members 107 and 207 and the tip surfaces of the fins 104 and 204 for heat dissipation.

第２の実施形態においても、固定部材１０７と固定部材２０７は、図示しない冷却ケーシングの一部を構成する。冷却ケーシングは、水等の液体冷媒の冷媒流入口と冷媒流出口とを備えており、冷却ケーシング内部に冷媒の流路を有する流路形成体を構成している。したがって、パワー半導体モジュール１０００は冷却ケーシング内を流通する冷媒で冷却される。第２の実施の形態では、流路形成体に流入した冷媒は、カバー部１０７ａ、２０７ａと放熱部材１０３、２０３の間における放熱用のフィン１０４間または２０４間を流通する。このため、半導体装置３００の冷却能力を大きくすることができる。
第２の実施形態の他の構成は、第１の実施形態と同様であり、対応する部材に同一の符号を付して説明を省略する。
従って、第２の実施形態においても。第１の実施形態の効果（１）、（２）を奏する。 Also in the second embodiment, the fixing member 107 and the fixing member 207 form a part of a cooling casing (not shown). The cooling casing includes a refrigerant inlet and a refrigerant outlet for a liquid refrigerant such as water, and constitutes a flow passage forming body having a refrigerant flow passage inside the cooling casing. Therefore, the power semiconductor module 1000 is cooled by the refrigerant flowing in the cooling casing. In the second embodiment, the refrigerant flowing into the flow path forming body flows between the fins 104 or 204 for heat radiation between the cover portions 107a and 207a and the heat radiation members 103 and 203. Therefore, the cooling capacity of the semiconductor device 300 can be increased.
The other configurations of the second embodiment are similar to those of the first embodiment, and corresponding members are designated by the same reference numerals and description thereof is omitted.
Therefore, also in the second embodiment. The effects (1) and (2) of the first embodiment are achieved.

［実施例３］
実施例１とは、レーザ溶接の条件のみを変え、他の条件はすべて同一として、図３に示される構造のパワー半導体モジュール１０００を作製した。
実施例３の、レーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度８ｍ／ｍｉｎとした。 [Example 3]
A power semiconductor module 1000 having a structure shown in FIG. 3 was produced under the same conditions as in Example 1 except that the laser welding conditions were changed and all other conditions were the same.
The laser welding conditions of Example 3 were a laser output of 1700 W and a scanning speed of 8 m/min.

［実施例４］
実施例１とは、レーザ溶接の条件のみを変え、他の条件はすべて同一として、図３に示される構造のパワー半導体モジュール１０００を作製した。
実施例４の、レーザ溶接の条件は、レーザ出力１７００Ｗ、走査速度６ｍ／ｍｉｎとした。 [Example 4]
A power semiconductor module 1000 having a structure shown in FIG. 3 was produced under the same conditions as in Example 1 except that the laser welding conditions were changed and all other conditions were the same.
The laser welding conditions in Example 4 were a laser output of 1700 W and a scanning speed of 6 m/min.

実施例３、４についても、実施例１、２および比較例１〜３と同様、（１）接合状態の検査、（２）耐電圧試験、（３）部分放電試験を実施し、第２の実施形態の効果を検証した。この検査結果を、実施例１、２および比較例１〜３の検査結果が記載された図６に併記した。
図６を参照して明らかな通り、（１）接合状態の検査結果は、実施例３、４でも、実施例１、２と同様、良好であった。
また、（２）耐電圧試験結果は、実施例１、２と同様、５ｋＶｒｍｓで１分間、絶縁破壊することはなかった。
さらに、（３）部分放電試験結果、実施例１、２と同様、部分放電の最大放電電荷量は検出限界の１ｐＣ以下であった。
従って、試験結果の総合判定は、実施例３、４は、実施例１、２と同様、すべての試験結果が良好であり、これにより、第２の実施形態による効果を確認することができた。 Similarly to Examples 1 and 2 and Comparative Examples 1 to 3, Examples 3 and 4 were subjected to (1) inspection of bonding state, (2) withstand voltage test, and (3) partial discharge test, and second test. The effect of the embodiment was verified. The inspection results are also shown in FIG. 6 in which the inspection results of Examples 1 and 2 and Comparative Examples 1 to 3 are described.
As is apparent from FIG. 6, (1) the inspection result of the bonding state was good in Examples 3 and 4 as in Examples 1 and 2.
In addition, (2) the result of the withstand voltage test was that dielectric breakdown did not occur for 1 minute at 5 kVrms, as in Examples 1 and 2.
Further, as a result of (3) partial discharge test, as in Examples 1 and 2, the maximum discharge charge amount of partial discharge was 1 pC or less, which is the detection limit.
Therefore, in the comprehensive judgment of the test results, all of the test results of Examples 3 and 4 are good as in Examples 1 and 2, and the effect of the second embodiment could be confirmed. ..

−第３の実施形態−
図７は、本発明のパワー半導体モジュールの第３の実施形態の断面図である。
第３の実施形態のパワー半導体モジュール１０００では、絶縁部材１０１上に設けられた第１導体１０２の外周に第５導体１０８が設けられ、入出力端子３の第５導体１０８に対応する領域に、凹部３１が設けられた構造を有する。
第５導体１０８は、第１導体１０２とは絶縁されている。第５導体１０８は、接地電位に接続された接地導体であるか、あるいは能動素子１およびダイオード２とは電気的に接続されていない、すなわち、絶縁された導体（浮き導体）である。浮き導体は、絶縁部材１０１、第１導体１０２、第２導体１０２ａおよび放熱部材１０３から構成される配線板が強度的に弱い領域や変形しやすい領域に補強用として設けられる導体である。 -Third Embodiment-
FIG. 7 is a cross-sectional view of a third embodiment of the power semiconductor module of the present invention.
In the power semiconductor module 1000 of the third embodiment, the fifth conductor 108 is provided on the outer periphery of the first conductor 102 provided on the insulating member 101, and the region corresponding to the fifth conductor 108 of the input/output terminal 3 is provided. It has a structure in which a concave portion 31 is provided.
The fifth conductor 108 is insulated from the first conductor 102. The fifth conductor 108 is a ground conductor connected to the ground potential, or is not electrically connected to the active element 1 and the diode 2, that is, an insulated conductor (floating conductor). The floating conductor is a conductor provided for reinforcement in a region where the wiring board including the insulating member 101, the first conductor 102, the second conductor 102a, and the heat dissipation member 103 is weak in strength or is easily deformed.

固定部材１０６と放熱部材１０３とを接合する接合部８は、平面視で、第５導体１０８と重なる領域に設けられている。第５導体１０８の電位が接地電位であるか浮き電位であれば、接合部８と第５導体１０８とが導通したり、接合部８と第５導体１０８間に異物が介在したりしても差し支えない。入出力端子３の第５導体１０８に対応する領域に、凹部３１が設けられているため、入出力端子３と第５導体１０８との間隙を小さくしても、入出力端子３間の電気的なショートを防止することができる。入出力端子３と第５導体１０８との間隙を小さくすることにより、パワー半導体モジュール１０００の薄型化を図ることができる。 The joint portion 8 that joins the fixing member 106 and the heat dissipation member 103 is provided in a region overlapping the fifth conductor 108 in a plan view. If the potential of the fifth conductor 108 is the ground potential or the floating potential, even if the joint portion 8 and the fifth conductor 108 are electrically connected or a foreign substance is interposed between the joint portion 8 and the fifth conductor 108. It doesn't matter. Since the recess 31 is provided in the region of the input/output terminal 3 corresponding to the fifth conductor 108, even if the gap between the input/output terminal 3 and the fifth conductor 108 is reduced, the electrical connection between the input/output terminals 3 is reduced. It is possible to prevent such a short circuit. By reducing the gap between the input/output terminal 3 and the fifth conductor 108, the power semiconductor module 1000 can be thinned.

第３の実施形態の他の構成は、第１の実施形態と同様であり、対応する部材に同一の符号を付して説明を省略する。
第３の実施形態においても、接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられている。
従って、第３の実施形態においても。第１の実施形態の効果（１）、（２）を奏する。 The other configurations of the third embodiment are similar to those of the first embodiment, and corresponding members are designated by the same reference numerals and description thereof is omitted.
Also in the third embodiment, the joint portion 8 is provided at a position that does not overlap the first conductor 102 in plan view.
Therefore, also in the third embodiment. The effects (1) and (2) of the first embodiment are achieved.

−第４の実施形態−
図８は、本発明のパワー半導体モジュールの第４の実施形態の断面図である。
第４の実施形態のパワー半導体モジュール１０００は、第１の実施形態（図１参照）に示されている厚さ方向（Ｚ方向）上方の第３導体２０２、第４導体２０２ａ、絶縁部材２０１および放熱用のフィン２０４を有する放熱部材２０３を備えていない。また、第４の実施形態のパワー半導体モジュール１０００は、放熱部材２０３を備えていないので、放熱部材２０３に接合される固定部材２０６も備えていない。
すなわち、第４の実施形態のパワー半導体モジュール１０００では、能動素子１およびダイオード２の＋Ｚ方向の表面側は、樹脂７で封止されているだけである。
第４の実施形態の上記以外の構成は、第１の実施形態と同様であり、接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられている。
従って、第４の実施形態においても、第１の実施形態の効果（１）を奏する。 -Fourth Embodiment-
FIG. 8 is a sectional view of the fourth embodiment of the power semiconductor module of the present invention.
The power semiconductor module 1000 of the fourth embodiment includes a third conductor 202, a fourth conductor 202a, an insulating member 201 and an upper portion in the thickness direction (Z direction) shown in the first embodiment (see FIG. 1). The heat radiation member 203 having the fins 204 for heat radiation is not provided. Further, since the power semiconductor module 1000 of the fourth embodiment does not include the heat dissipation member 203, it does not include the fixing member 206 joined to the heat dissipation member 203.
That is, in the power semiconductor module 1000 of the fourth embodiment, the surface side of the active element 1 and the diode 2 in the +Z direction is only sealed with the resin 7.
The configuration of the fourth embodiment other than the above is the same as that of the first embodiment, and the joint portion 8 is provided at a position that does not overlap the first conductor 102 in plan view.
Therefore, the effect (1) of the first embodiment is also achieved in the fourth embodiment.

−第５の施形態−
図９は、本発明のパワー半導体モジュールの第５の実施形態の断面図である。
第５の実施形態のパワー半導体モジュール１０００は、第２の実施形態（図３参照）に示されている厚さ方向（Ｚ方向）上方の第３導体２０２、第４導体２０２ａ、絶縁部材２０１および放熱用のフィン２０４を有する放熱部材２０３を備えていない。また、第５の実施形態のパワー半導体モジュール１０００は、放熱部材２０３を備えていないので、放熱部材２０３に接合される固定部材２０７も備えていない。
すなわち、第５の実施形態のパワー半導体モジュール１０００では、能動素子１およびダイオード２の＋Ｚ方向の表面側は、樹脂７で封止されているだけである。
第５の実施形態の上記以外の構成は、第２の実施形態と同様であり、接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられている。
従って、第５の実施形態においても、第１の実施形態の効果（１）を奏する。 -Fifth Embodiment-
FIG. 9: is sectional drawing of 5th Embodiment of the power semiconductor module of this invention.
The power semiconductor module 1000 of the fifth embodiment includes a third conductor 202, a fourth conductor 202a, an insulating member 201 and an upper portion in the thickness direction (Z direction) shown in the second embodiment (see FIG. 3). The heat radiation member 203 having the fins 204 for heat radiation is not provided. Further, since the power semiconductor module 1000 of the fifth embodiment does not include the heat dissipation member 203, it does not include the fixing member 207 joined to the heat dissipation member 203.
That is, in the power semiconductor module 1000 of the fifth embodiment, the surface side of the active element 1 and the diode 2 in the +Z direction is only sealed with the resin 7.
The configuration of the fifth embodiment other than the above is the same as that of the second embodiment, and the joint portion 8 is provided at a position that does not overlap the first conductor 102 in plan view.
Therefore, the effect (1) of the first embodiment is also achieved in the fifth embodiment.

−第６の施形態−
図１０は、本発明のパワー半導体モジュールの第６の実施形態の断面図である。
第６の実施形態のパワー半導体モジュール１０００は、第１の実施形態に示されている半導体装置３００を複数個（図１０では、３個として図示されている）備えている。固定部材１０６、２０６は、隣接する各半導体装置３００の放熱部材１０３，２０３に、接合部８で接合されている。なお、図１０は、図１に示すパワー半導体モジュール１０００の断面とは、直交する方向の断面を示す図であり、入出力端子３は図示されていないが、第１の実施形態と同様、接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられている。固定部材１０６と固定部材２０６は、図示しない冷却ケーシングの一部を構成する。冷却ケーシングは、水等の液体冷媒の冷媒流入口と冷媒流出口とを備えており、冷却ケーシング内部に冷媒の流路を有する流路形成体を構成している。したがって、パワー半導体モジュール１０００は冷却ケーシング内を流通する冷媒で冷却される。
従って、第６の実施形態においても、第１の実施形態の効果（１）、（２）を奏する。 -Sixth Embodiment-
FIG. 10: is sectional drawing of 6th Embodiment of the power semiconductor module of this invention.
The power semiconductor module 1000 according to the sixth embodiment includes a plurality of semiconductor devices 300 (illustrated as three in FIG. 10) shown in the first embodiment. The fixing members 106 and 206 are joined to the heat radiating members 103 and 203 of the adjacent semiconductor devices 300 at the joint portion 8. 10 is a view showing a cross section in a direction orthogonal to the cross section of the power semiconductor module 1000 shown in FIG. 1, and the input/output terminal 3 is not shown, but similar to the first embodiment, it is bonded. The portion 8 is provided at a position that does not overlap the first conductor 102 in plan view. The fixing member 106 and the fixing member 206 form a part of a cooling casing (not shown). The cooling casing includes a refrigerant inlet and a refrigerant outlet for a liquid refrigerant such as water, and constitutes a flow passage forming body having a refrigerant flow passage inside the cooling casing. Therefore, the power semiconductor module 1000 is cooled by the refrigerant flowing in the cooling casing.
Therefore, the effects (1) and (2) of the first embodiment are also obtained in the sixth embodiment.

なお、図１０では、３個の半導体装置３００を、固定部材１０６，２０６により連結した構造として例示しているが、半導体装置３００の数は、２個または４個以上とすることもできる。
また、図１０では、第１の実施形態に示す複数個の半導体装置３００を固定部材１０６、２０６により連結したパワー半導体モジュール１０００として例示した。しかし、第２〜第５の実施形態に示す半導体装置３００に対しても、同様に、複数個の半導体装置３００を固定部材１０６（１０７）、２０６（２０７）または固定部材１０６により連結したパワー半導体モジュールとすることができる。 Although FIG. 10 illustrates the structure in which the three semiconductor devices 300 are connected by the fixing members 106 and 206, the number of the semiconductor devices 300 may be two or four or more.
Further, in FIG. 10, the power semiconductor module 1000 in which the plurality of semiconductor devices 300 shown in the first embodiment are connected by the fixing members 106 and 206 is illustrated. However, similarly to the semiconductor device 300 shown in the second to fifth embodiments, a power semiconductor in which a plurality of semiconductor devices 300 are connected by the fixing members 106 (107), 206 (207) or the fixing member 106 is similarly provided. It can be a module.

−第７の施形態−
図１１は、本発明のパワー半導体モジュールを有する電力変換装置の断面図である。
電力変換装置２０００は、パワー半導体モジュール１０００と、制御基板５００と、キャパシタケース６００とを備えている。
パワー半導体モジュール１０００は、図３に図示された半導体装置３００と固定部材１０７、２０７とを有する。キャパシタケース６００の内部には、複数個（図１１では、２個として図示されている）のキャパシタ６０１が収納されている。図１１では、パワー半導体モジュール１０００は、１個のみが図示されているが、３個のパワー半導体モジュール１０００を備えるようにしてもよい。各パワー半導体モジュール１０００を構成する半導体装置３００は、それぞれ、上述した通り、能動素子１およびダイオード２により構成される上アーム回路および下アーム回路を内蔵しており、３個の半導体装置３００を並列接続して三相インバータ回路を構成することができる。 -Seventh Embodiment-
FIG. 11 is a sectional view of a power converter having a power semiconductor module of the present invention.
The power conversion device 2000 includes a power semiconductor module 1000, a control board 500, and a capacitor case 600.
The power semiconductor module 1000 has the semiconductor device 300 and the fixing members 107 and 207 shown in FIG. Inside the capacitor case 600, a plurality of capacitors 601 (illustrated as two in FIG. 11) are housed. Although only one power semiconductor module 1000 is shown in FIG. 11, three power semiconductor modules 1000 may be provided. As described above, each of the semiconductor devices 300 forming each power semiconductor module 1000 incorporates the upper arm circuit and the lower arm circuit configured by the active element 1 and the diode 2, and three semiconductor devices 300 are arranged in parallel. A three-phase inverter circuit can be configured by connecting them.

半導体装置３００の正極側端子３ａは、バスバー７０１を介してキャパシタ６０１のキャパシタ端子６０２に接続されている。複数のバスバー７０１、７０２がインサート成型され、バスバーユニット７００が形成されている。複数個のキャパシタ６０１は、電気的に並列に接続されている。半導体装置３００の交流出力端子３ｂは、不図示のモータジェネレータに接続される。 The positive electrode side terminal 3 a of the semiconductor device 300 is connected to the capacitor terminal 602 of the capacitor 601 via the bus bar 701. A plurality of bus bars 701 and 702 are insert-molded to form a bus bar unit 700. The plurality of capacitors 601 are electrically connected in parallel. The AC output terminal 3b of the semiconductor device 300 is connected to a motor generator (not shown).

パワー半導体モジュール１０００、バスバーユニット７００およびキャパシタケース６００を厚さ方向（Ｚ方向）に貫通して、中空軸を有する複数の接続部材７１０が設けられている。接続部材７１０の上端面には、制御基板５００が載置されている。制御基板５００には、複数の制御用電子部品５０１が実装されている。制御基板５００、パワー半導体モジュール１０００、バスバーユニット７００およびキャパシタケース６００は、接続部材７１０の中空軸内をそれぞれ挿通される固定用ボルト７１１により固定されている。
図１１に図示されるように、接合部８は、平面視で、第１導体１０２とは重ならない位置に設けられている。
このように、第２の実施形態に示されたパワー半導体モジュール１０００を用いて、電力変換装置２０００を構成することが可能である。
なお、図１１では、第２の実施形態に示されたパワー半導体モジュール１０００を用いた電力変換装置２０００として例示した。しかし、第１、第３〜第６の実施形態に示されたパワー半導体モジュール１０００を用いて電力変換装置２０００を構成することもできる。 A plurality of connecting members 710 having a hollow shaft are provided to penetrate the power semiconductor module 1000, the bus bar unit 700, and the capacitor case 600 in the thickness direction (Z direction). The control board 500 is placed on the upper end surface of the connection member 710. A plurality of control electronic components 501 are mounted on the control board 500. The control board 500, the power semiconductor module 1000, the bus bar unit 700, and the capacitor case 600 are fixed by fixing bolts 711 that are inserted through the hollow shaft of the connecting member 710.
As illustrated in FIG. 11, the joint portion 8 is provided at a position that does not overlap the first conductor 102 in plan view.
As described above, the power conversion device 2000 can be configured using the power semiconductor module 1000 shown in the second embodiment.
Note that FIG. 11 illustrates the power conversion device 2000 using the power semiconductor module 1000 shown in the second embodiment. However, the power conversion device 2000 can also be configured using the power semiconductor module 1000 shown in the first and third to sixth embodiments.

上記では、種々の実施の形態および変形例を説明したが、本発明はこれらの内容に限定されるものではない。上述した種々の実施の形態および変形例を組み合わせたり、適宜、変更を加えたりしてもよく、本発明の技術的思想の範囲内で考えられるその他の態様も本発明の範囲内に含まれる。 Although various embodiments and modifications have been described above, the present invention is not limited to these contents. The various embodiments and modifications described above may be combined or appropriately modified, and other modes conceivable within the scope of the technical idea of the present invention are also included in the scope of the present invention.

１ 能動素子（半導体素子）
２ ダイオード（半導体素子）
３ 入出力端子
７ 樹脂
８ 接合部
９ ショート領域
１０ ブローホール
３１ 凹部
１０１、２０１ 絶縁部材
１０２ 第１導体
１０２ａ 第２導体
２０２ 第３導体
２０２ａ 第４導体
１０３ 放熱部材（第１ベース）
１０４、２０４ 放熱用のフィン
１０６、１０７ 固定部材（第２ベース）
１０７ａ カバー部
１０８ 第５導体
２０２ 第３導体
２０３ 放熱部材
２０６、２０７ 固定部材
２０７ａ カバー部
３００ 半導体装置
１０００ パワー半導体モジュール
２０００ 電力変換装置 1 Active element (semiconductor element)
2 Diode (semiconductor element)
3 Input/Output Terminal 7 Resin 8 Joining Section 9 Shorting Area 10 Blow Hole 31 Recesses 101, 201 Insulating Member 102 First Conductor 102a Second Conductor 202 Third Conductor 202a Fourth Conductor 103 Heat Dissipating Member (First Base)
104, 204 Fins for heat dissipation 106, 107 Fixing member (second base)
107a Cover Part 108 Fifth Conductor 202 Third Conductor 203 Heat Dissipating Members 206, 207 Fixing Member 207a Cover Part 300 Semiconductor Device 1000 Power Semiconductor Module 2000 Power Converter

Claims (12)

半導体素子と、
一方側の面に前記半導体素子が電気的に接続され、接地電位以外の電位を有する第１導体と、
前記第１導体の、前記半導体素子が設けられた前記一方側の面とは反対側の他方側の面に設けられた絶縁部材と、
前記絶縁部材の、前記第１導体が設けられた前記一方側の面とは反対側の他方側の面に設けられ、金属材料により形成された第１ベースと、
前記半導体素子と前記第１導体と前記絶縁部材との外周側面を封止する樹脂と、を備えた半導体装置と、
前記第１ベースと接合部において金属溶融により接合され、金属材料により形成された第２ベースと、を備え、
前記第１ベースと前記第２ベースとを接合する前記接合部は、平面視で、前記第１導体とは重ならない位置に設けられているパワー半導体モジュール。 Semiconductor element,
The semiconductor element is electrically connected to the surface on one side, and a first conductor having a potential other than the ground potential,
An insulating member provided on the surface of the other side of the first conductor opposite to the surface of the one side on which the semiconductor element is provided;
A first base formed of a metal material, which is provided on the other surface of the insulating member opposite to the one surface on which the first conductor is provided;
A semiconductor device comprising: the semiconductor element, the first conductor, and a resin that seals outer peripheral side surfaces of the insulating member,
A second base formed of a metal material, which is joined to the first base by melting the metal in the joint portion,
The power semiconductor module, wherein the joint portion that joins the first base and the second base is provided at a position not overlapping the first conductor in a plan view. 請求項１に記載のパワー半導体モジュールにおいて、
前記半導体装置は、前記絶縁部材の前記半導体素子側に設けられ、前記第１導体とは電気的に絶縁された第２導体をさらに備えるパワー半導体モジュール。 The power semiconductor module according to claim 1,
The power semiconductor module, wherein the semiconductor device further includes a second conductor provided on the semiconductor element side of the insulating member and electrically insulated from the first conductor. 請求項１に記載のパワー半導体モジュールにおいて、
前記半導体装置は、さらに、前記半導体素子の前記一方側の面と反対側の他面側に配置された別の絶縁部材と、
前記別の絶縁部材の前記半導体素子側とは反対側に配置された、金属材料により形成された別の第１ベースと、を備え、
前記別の第１ベースと接合部において金属溶融により接合された、金属材料により形成された別の第２ベースと、をさらに備えるパワー半導体モジュール。 The power semiconductor module according to claim 1,
The semiconductor device further includes another insulating member disposed on the other surface side opposite to the one surface of the semiconductor element,
Another first base formed of a metal material, which is arranged on a side of the another insulating member opposite to the semiconductor element side,
A power semiconductor module, further comprising: another first base and another second base formed of a metal material, which is joined by metal fusion at a joining portion. 請求項３に記載のパワー半導体モジュールにおいて、
前記別の絶縁部材の前記半導体素子側に設けられた第３導体をさらに備えるパワー半導体モジュール。 The power semiconductor module according to claim 3,
The power semiconductor module further provided with the 3rd conductor provided in the said semiconductor element side of the said another insulating member. 請求項１に記載のパワー半導体モジュールにおいて、
前記半導体装置は、
前記絶縁部材の前記半導体素子側に設けられ、前記第１導体とは電気的に絶縁された別の導体と、
前記別の導体に対応する領域に凹部が形成された入出力端子と、をさらに備えるパワー半導体モジュール。 The power semiconductor module according to claim 1,
The semiconductor device is
Another conductor provided on the semiconductor element side of the insulating member and electrically insulated from the first conductor,
A power semiconductor module further comprising: an input/output terminal having a recess formed in a region corresponding to the another conductor. 請求項５に記載のパワー半導体モジュールにおいて、
前記別の導体は、接地電位を有する接地導体、または前記半導体素子とは電気的に絶縁された浮き導体であるパワー半導体モジュール。 The power semiconductor module according to claim 5,
The power semiconductor module, wherein the other conductor is a ground conductor having a ground potential, or a floating conductor electrically insulated from the semiconductor element. 請求項１に記載のパワー半導体モジュールにおいて、
前記第１ベースは、放熱用のフィンを有するパワー半導体モジュール。 The power semiconductor module according to claim 1,
The first base is a power semiconductor module having fins for heat dissipation. 請求項７に記載のパワー半導体モジュールにおいて、
前記第２ベースは、前記放熱用のフィンを覆うカバー部を有するパワー半導体モジュール。 The power semiconductor module according to claim 7,
The second base is a power semiconductor module having a cover portion that covers the heat radiation fins. 請求項１から８までのいずれか一項に記載のパワー半導体モジュールにおいて、
前記半導体装置を複数個、備え、
前記第２ベースは、隣接する前記半導体装置を連結する部材であるパワー半導体モジュール。 The power semiconductor module according to any one of claims 1 to 8,
A plurality of the semiconductor devices,
The second base is a power semiconductor module that is a member that connects the adjacent semiconductor devices. 請求項９に記載のパワー半導体モジュールにおいて、前記第２ベースは、前記半導体装置を冷却するための冷却用流路を有するパワー半導体モジュール。 The power semiconductor module according to claim 9, wherein the second base has a cooling flow path for cooling the semiconductor device. 請求項９または１０に記載のパワー半導体モジュールを有する電力変換装置。 A power converter comprising the power semiconductor module according to claim 9. 請求項１から１０までのいずれか一項に記載のパワー半導体モジュールを製造する方法において、
前記第１ベースと前記第２ベースとをレーザ溶接により接合するパワー半導体モジュールの製造方法。 A method for manufacturing the power semiconductor module according to claim 1, wherein
A method of manufacturing a power semiconductor module, wherein the first base and the second base are joined by laser welding.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022123870A1 (en) * 2020-12-10 2022-06-16 日立Astemo株式会社 Electrical circuit body, power conversion device, and electrical circuit body manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3115654B1 (en) * 2020-10-28 2023-05-12 Valeo Systemes De Controle Moteur Electronic assembly featuring an improved cooling system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009125779A1 (en) * 2008-04-09 2009-10-15 富士電機デバイステクノロジー株式会社 Semiconductor device and method for manufacturing semiconductor device
JP2012257369A (en) * 2011-06-08 2012-12-27 Hitachi Automotive Systems Ltd Power module and electric power conversion apparatus using the same
JP2013232614A (en) * 2012-04-06 2013-11-14 Toyota Industries Corp Semiconductor device
JP2015133402A (en) * 2014-01-14 2015-07-23 トヨタ自動車株式会社 Semiconductor module manufacturing method
WO2018131301A1 (en) * 2017-01-12 2018-07-19 日立オートモティブシステムズ株式会社 Power semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009125779A1 (en) * 2008-04-09 2009-10-15 富士電機デバイステクノロジー株式会社 Semiconductor device and method for manufacturing semiconductor device
JP2012257369A (en) * 2011-06-08 2012-12-27 Hitachi Automotive Systems Ltd Power module and electric power conversion apparatus using the same
JP2013232614A (en) * 2012-04-06 2013-11-14 Toyota Industries Corp Semiconductor device
JP2015133402A (en) * 2014-01-14 2015-07-23 トヨタ自動車株式会社 Semiconductor module manufacturing method
WO2018131301A1 (en) * 2017-01-12 2018-07-19 日立オートモティブシステムズ株式会社 Power semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022123870A1 (en) * 2020-12-10 2022-06-16 日立Astemo株式会社 Electrical circuit body, power conversion device, and electrical circuit body manufacturing method

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