JP2020087250A - 過熱保護回路及び半導体装置 - Google Patents
過熱保護回路及び半導体装置 Download PDFInfo
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- JP2020087250A JP2020087250A JP2018224786A JP2018224786A JP2020087250A JP 2020087250 A JP2020087250 A JP 2020087250A JP 2018224786 A JP2018224786 A JP 2018224786A JP 2018224786 A JP2018224786 A JP 2018224786A JP 2020087250 A JP2020087250 A JP 2020087250A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Abstract
Description
過熱保護回路100は、感温素子であるダイオード110と、出力電流検出回路111と、制御回路112と、定電流源120、121と、PMOSトランジスタ130と、NMOSトランジスタ131、133と、調整端子を備えたNMOSトランジスタ132とを備えている。出力電流検出回路111は、PMOSトランジスタ134、135と、定電流源122を備えている。制御回路112は、PMOSトランジスタ136、138と、NMOSトランジスタ137を備えている。
出力トランジスタ30は、ソースが電源端子12に、ドレインが出力端子13に接続されている。直列に接続された抵抗31と抵抗32は、出力端子13と接地端子11の間に接続されている。誤差増幅器34は、非反転入力端子に抵抗31と抵抗32の節点が接続され、反転入力端子に基準電圧回路33の出力端子が接続され、出力端子が出力トランジスタ30のゲートと過熱保護回路100の入出力端子14に接続されている。
PMOSトランジスタ148の出力する第二センス電流であるセンス電流Is2は、出力トランジスタ30の出力電流Ioutに比例し、定電流源123が流す定電流で飽和する。
PMOSトランジスタ139は、出力トランジスタ30の出力電流Ioutに比例した電流を出力する。その電流は、PMOSトランジスタ140を介してNMOSトランジスタ142に入力される。NMOSトランジスタ142とカレントミラー接続されたNMOSトランジスタ143及び144は、NMOSトランジスタ142の入力電流に比例した電流を出力する。PMOSトランジスタ140及び141のゲート・ソース間電圧が一致するように設計することで、PMOSトランジスタ140のソース電圧は出力端子13の電圧Voutと略等しくなる。従って、PMOSトランジスタ139と出力トランジスタ30のソースドレイン間電圧が略等しくなり、電源電圧Vinに依存せずPMOSトランジスタ139は精度よく出力電流Ioutに比例した電流を流すことが出来る。
11 接地端子
12 電源端子
13 出力端子
30 出力トランジスタ
33 基準電圧回路
34 誤差増幅器
100、200 過熱保護回路
110 ダイオード
111、211 出力電流検出回路
112、212 制御回路
120、121、122、123、124、125 定電流源
Claims (4)
- 半導体装置を過熱から保護する過熱保護回路であって、
前記半導体装置の温度に応じた感温電流を流す感温素子と、
前記感温素子に第一の定電流を供給する第一の定電流源と、
前記感温素子と前記第一の定電流源の間に設けられた第一のトランジスタと、
前記半導体装置の出力電流に応じたセンス電流に基づく電圧で前記第一のトランジスタのゲート電圧を制御する出力電流検出回路と、
前記感温電流と前記第一の定電流の比較結果に基づいた過熱検出信号を出力する出力回路と、
を備えたことを特徴とする過熱保護回路。 - 前記出力電流検出回路は、
ゲートに前記半導体装置の出力電流に応じた電圧が入力される第二のトランジスタと、
前記第二のトランジスタの電流を制限する第二の定電流源と、
を備えたことを特徴とする請求項1に記載の過熱保護回路。 - 前記出力電流検出回路は、
前記第二のトランジスタと並列に接続され、ゲートに前記過熱検出信号に応じた電圧が入力される第三のトランジスタと、を備え、
前記出力回路が前記過熱検出信号を出力している間は、前記第三のトランジスタがオンして、前記第一のトランジスタが前記半導体装置の出力電流に関わらない所定の電流を流すように前記第一のトランジスタのゲート電圧を制御する
ことを特徴とする請求項2に記載の過熱保護回路。 - 出力トランジスタと、
前記出力トランジスタのゲートに制御電圧を出力する駆動回路と、
前記駆動回路の制御電圧に応じて前記出力トランジスタのゲート電圧を制御する請求項1から3のいずれかに記載の過熱保護回路と、
を備えたことを特徴とする半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018224786A JP7126931B2 (ja) | 2018-11-30 | 2018-11-30 | 過熱保護回路及び半導体装置 |
US16/689,687 US11387825B2 (en) | 2018-11-30 | 2019-11-20 | Overheat protection circuit and semiconductor device including the same |
CN201911180499.8A CN111258364B (zh) | 2018-11-30 | 2019-11-27 | 过热保护电路以及具备该过热保护电路的半导体装置 |
KR1020190156867A KR102658159B1 (ko) | 2018-11-30 | 2019-11-29 | 과열 보호 회로 및 이것을 구비한 반도체 장치 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2018224786A JP7126931B2 (ja) | 2018-11-30 | 2018-11-30 | 過熱保護回路及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2020087250A true JP2020087250A (ja) | 2020-06-04 |
JP7126931B2 JP7126931B2 (ja) | 2022-08-29 |
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JP2018224786A Active JP7126931B2 (ja) | 2018-11-30 | 2018-11-30 | 過熱保護回路及び半導体装置 |
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US (1) | US11387825B2 (ja) |
JP (1) | JP7126931B2 (ja) |
KR (1) | KR102658159B1 (ja) |
CN (1) | CN111258364B (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6867573B1 (en) * | 2003-11-07 | 2005-03-15 | National Semiconductor Corporation | Temperature calibrated over-current protection circuit for linear voltage regulators |
JP2008282118A (ja) * | 2007-05-09 | 2008-11-20 | Ricoh Co Ltd | 過熱保護回路およびそれを具備する電子機器、ならびにその制御方法 |
JP2011061966A (ja) * | 2009-09-09 | 2011-03-24 | Seiko Instruments Inc | ボルテージレギュレータ |
JP2015176327A (ja) * | 2014-03-14 | 2015-10-05 | セイコーインスツル株式会社 | 過熱保護回路及びボルテージレギュレータ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002312044A (ja) * | 2001-04-16 | 2002-10-25 | Denso Corp | 電源回路 |
JP4920305B2 (ja) * | 2006-05-19 | 2012-04-18 | 株式会社リコー | 過熱検出回路および該過熱検出回路を内蔵した半導体装置および電子機器 |
JP5491223B2 (ja) * | 2009-06-17 | 2014-05-14 | セイコーインスツル株式会社 | 過熱保護回路及び電源用集積回路 |
JP2012108087A (ja) * | 2010-10-28 | 2012-06-07 | Seiko Instruments Inc | 温度検知装置 |
JP6250418B2 (ja) * | 2013-05-23 | 2017-12-20 | エスアイアイ・セミコンダクタ株式会社 | ボルテージレギュレータ |
JP6342240B2 (ja) * | 2013-08-26 | 2018-06-13 | エイブリック株式会社 | ボルテージレギュレータ |
JP6316647B2 (ja) * | 2014-04-25 | 2018-04-25 | エイブリック株式会社 | 過電流保護回路、半導体装置、及びボルテージレギュレータ |
JP6436728B2 (ja) * | 2014-11-11 | 2018-12-12 | エイブリック株式会社 | 温度検出回路及び半導体装置 |
JP6542103B2 (ja) * | 2015-11-09 | 2019-07-10 | エイブリック株式会社 | 過熱検出回路、過熱保護回路、及び半導体装置 |
WO2019169611A1 (en) * | 2018-03-08 | 2019-09-12 | Texas Instruments Incorporated | Adaptive thermal overshoot and current limiting protection for mosfets |
-
2018
- 2018-11-30 JP JP2018224786A patent/JP7126931B2/ja active Active
-
2019
- 2019-11-20 US US16/689,687 patent/US11387825B2/en active Active
- 2019-11-27 CN CN201911180499.8A patent/CN111258364B/zh active Active
- 2019-11-29 KR KR1020190156867A patent/KR102658159B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6867573B1 (en) * | 2003-11-07 | 2005-03-15 | National Semiconductor Corporation | Temperature calibrated over-current protection circuit for linear voltage regulators |
JP2008282118A (ja) * | 2007-05-09 | 2008-11-20 | Ricoh Co Ltd | 過熱保護回路およびそれを具備する電子機器、ならびにその制御方法 |
JP2011061966A (ja) * | 2009-09-09 | 2011-03-24 | Seiko Instruments Inc | ボルテージレギュレータ |
JP2015176327A (ja) * | 2014-03-14 | 2015-10-05 | セイコーインスツル株式会社 | 過熱保護回路及びボルテージレギュレータ |
Also Published As
Publication number | Publication date |
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KR102658159B1 (ko) | 2024-04-17 |
US20200177174A1 (en) | 2020-06-04 |
CN111258364B (zh) | 2023-09-15 |
CN111258364A (zh) | 2020-06-09 |
US11387825B2 (en) | 2022-07-12 |
KR20200066241A (ko) | 2020-06-09 |
JP7126931B2 (ja) | 2022-08-29 |
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