JP2020079192A - 単結晶成長炉の反射スクリーン及び単結晶成長炉 - Google Patents
単結晶成長炉の反射スクリーン及び単結晶成長炉 Download PDFInfo
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- JP2020079192A JP2020079192A JP2019191691A JP2019191691A JP2020079192A JP 2020079192 A JP2020079192 A JP 2020079192A JP 2019191691 A JP2019191691 A JP 2019191691A JP 2019191691 A JP2019191691 A JP 2019191691A JP 2020079192 A JP2020079192 A JP 2020079192A
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- Prior art keywords
- single crystal
- reflective screen
- inner cylinder
- crystal growth
- growth furnace
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Abstract
Description
図1を参照して、本出願の一実施形態に従った単結晶成長炉の反射スクリーン100を詳細に説明する。
図2を参照して、本出願の一実施形態に従った単結晶成長炉200を詳細に説明する。単結晶成長炉200は、上述の反射スクリーン100を含んでいる。単結晶成長炉200は、炉体(ファーネスボディ)と、炉体内に配置されたるつぼと、るつぼの上方に配置された反射スクリーンとを含んでいる。反射スクリーンの詳細は上述したとおりである。
Claims (8)
- 単結晶成長炉の反射スクリーンであって、
内側シリンダと、
外側シリンダと、
前記内側シリンダと前記外側シリンダとの間に挟み込まれた断熱材と、
前記内側シリンダと前記外側シリンダとの結合部に配置された断熱パッドと、
を有する反射スクリーン。 - 前記断熱パッドの材料は石英を有する、請求項1に記載の反射スクリーン。
- 前記石英は被覆処理を受けている、請求項2に記載の反射スクリーン。
- 当該反射スクリーンは、少なくとも1つの断熱パッドを有する、請求項1に記載の反射スクリーン。
- 前記断熱パッドは、前記内側シリンダの底部に配置された第1の断熱パッド、及び/又は前記内側シリンダの頂部に配置された第2の断熱パッドを有する、請求項1に記載の反射スクリーン。
- 前記断熱パッドは、前記内側シリンダの頂部に配置された第2の断熱パッドを有し、
当該反射スクリーンは、逆円錐形の本体と、該本体の上端から延在した延長部とを有し、
前記第2の断熱パッドは更に、前記延長部に配置され且つ前記内側シリンダと前記外側シリンダとの間に挟み込まれた部分を有する、
請求項1に記載の反射スクリーン。 - 前記内側シリンダ及び/又は前記外側シリンダの材料は、カーボン/カーボン(C/C)コンポジット及び/又はグラフェンを有する、請求項1に記載の反射スクリーン。
- 炉体と、
前記炉体内に配置されたるつぼと、
請求項1乃至7のいずれか一項に記載の反射スクリーンであり、前記るつぼの上方に配置された反射スクリーンと、
を有する単結晶成長炉。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811340095.6 | 2018-11-12 | ||
CN201811340095.6A CN111172585A (zh) | 2018-11-12 | 2018-11-12 | 一种单晶生长炉的反射屏及单晶生长炉 |
Publications (2)
Publication Number | Publication Date |
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JP2020079192A true JP2020079192A (ja) | 2020-05-28 |
JP7025395B2 JP7025395B2 (ja) | 2022-02-24 |
Family
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JP2019191691A Active JP7025395B2 (ja) | 2018-11-12 | 2019-10-21 | 単結晶成長炉の反射スクリーン及び単結晶成長炉 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20200149185A1 (ja) |
JP (1) | JP7025395B2 (ja) |
KR (1) | KR102299654B1 (ja) |
CN (1) | CN111172585A (ja) |
DE (1) | DE102019127772A1 (ja) |
TW (1) | TWI722449B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102271830B1 (ko) * | 2020-10-07 | 2021-07-01 | 한화솔루션 주식회사 | 에너지 절감형 잉곳 성장 장치 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111893561B (zh) * | 2020-07-01 | 2021-08-17 | 中国科学院上海微系统与信息技术研究所 | 一种用于单晶硅生长炉的复合隔热结构及单晶硅生长炉 |
CN111893558B (zh) * | 2020-07-01 | 2021-08-17 | 中国科学院上海微系统与信息技术研究所 | 一种用于单晶硅生长炉的薄膜隔热片及单晶硅生长炉 |
CN112877768B (zh) * | 2021-01-14 | 2022-02-01 | 新美光(苏州)半导体科技有限公司 | 用于半导体晶棒生长的导流筒、生长装置及生长方法 |
CN112921395A (zh) * | 2021-01-22 | 2021-06-08 | 上海新昇半导体科技有限公司 | 拉晶装置 |
CN113755949B (zh) * | 2021-09-08 | 2022-06-21 | 广东三宝新材料科技股份有限公司 | 一种人工合成黑云母晶体的结晶方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002538064A (ja) * | 1999-02-26 | 2002-11-12 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 結晶引揚装置のための熱シールド装置 |
US20040055531A1 (en) * | 2002-09-20 | 2004-03-25 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
JP2004352581A (ja) * | 2003-05-30 | 2004-12-16 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶引上げ装置の熱遮蔽部材 |
JP2007191353A (ja) * | 2006-01-19 | 2007-08-02 | Toshiba Ceramics Co Ltd | 輻射シールド及びそれを具備する単結晶引上装置 |
CN102352530A (zh) * | 2011-11-09 | 2012-02-15 | 内蒙古中环光伏材料有限公司 | 用于直拉硅单晶炉的热屏装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6579362B2 (en) * | 2001-03-23 | 2003-06-17 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
CN101838841A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN202380126U (zh) * | 2011-11-09 | 2012-08-15 | 内蒙古中环光伏材料有限公司 | 一种用于直拉硅单晶炉的热屏装置 |
CN202558960U (zh) * | 2012-04-25 | 2012-11-28 | 浙江华友电子有限公司 | 一种单晶炉用导流筒 |
CN102758246A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 单晶炉用热屏蔽器 |
CN204727982U (zh) * | 2015-06-30 | 2015-10-28 | 湖南南方搏云新材料有限责任公司 | 一种直拉硅单晶炉用固化炭毡整体导流筒 |
CN105239150A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 单晶硅生长炉用导流筒及其应用 |
CN108018600A (zh) * | 2016-10-28 | 2018-05-11 | 上海新昇半导体科技有限公司 | 单晶生长炉热屏及其制造方法 |
CN206232841U (zh) * | 2016-12-13 | 2017-06-09 | 宝鸡市宏佳有色金属加工有限公司 | 一种单晶炉石英导流筒 |
CN106521616A (zh) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | 一种单晶炉石英导流筒 |
CN207582004U (zh) * | 2017-11-16 | 2018-07-06 | 四川高铭科技有限公司 | 一种单晶炉钼导流筒热场隔热装置 |
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2018
- 2018-11-12 CN CN201811340095.6A patent/CN111172585A/zh active Pending
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2019
- 2019-06-04 TW TW108119302A patent/TWI722449B/zh active
- 2019-10-15 DE DE102019127772.8A patent/DE102019127772A1/de active Pending
- 2019-10-21 JP JP2019191691A patent/JP7025395B2/ja active Active
- 2019-11-01 KR KR1020190138475A patent/KR102299654B1/ko active IP Right Grant
- 2019-11-06 US US16/676,399 patent/US20200149185A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002538064A (ja) * | 1999-02-26 | 2002-11-12 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 結晶引揚装置のための熱シールド装置 |
US20040055531A1 (en) * | 2002-09-20 | 2004-03-25 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
JP2004352581A (ja) * | 2003-05-30 | 2004-12-16 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶引上げ装置の熱遮蔽部材 |
JP2007191353A (ja) * | 2006-01-19 | 2007-08-02 | Toshiba Ceramics Co Ltd | 輻射シールド及びそれを具備する単結晶引上装置 |
CN102352530A (zh) * | 2011-11-09 | 2012-02-15 | 内蒙古中环光伏材料有限公司 | 用于直拉硅单晶炉的热屏装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102271830B1 (ko) * | 2020-10-07 | 2021-07-01 | 한화솔루션 주식회사 | 에너지 절감형 잉곳 성장 장치 |
WO2022075629A1 (ko) * | 2020-10-07 | 2022-04-14 | 한화솔루션 주식회사 | 에너지 절감형 잉곳 성장 장치 |
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Publication number | Publication date |
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US20200149185A1 (en) | 2020-05-14 |
CN111172585A (zh) | 2020-05-19 |
TW202018133A (zh) | 2020-05-16 |
JP7025395B2 (ja) | 2022-02-24 |
DE102019127772A1 (de) | 2020-05-14 |
TWI722449B (zh) | 2021-03-21 |
KR102299654B1 (ko) | 2021-09-08 |
KR20200055654A (ko) | 2020-05-21 |
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