JP2020064916A - プロセス装置 - Google Patents
プロセス装置 Download PDFInfo
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- JP2020064916A JP2020064916A JP2018194754A JP2018194754A JP2020064916A JP 2020064916 A JP2020064916 A JP 2020064916A JP 2018194754 A JP2018194754 A JP 2018194754A JP 2018194754 A JP2018194754 A JP 2018194754A JP 2020064916 A JP2020064916 A JP 2020064916A
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- Prior art keywords
- circuit
- ground wire
- electrostatic chuck
- substrate
- electrically connected
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 15
- 239000011888 foil Substances 0.000 description 13
- 230000006837 decompression Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000006698 induction Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67396—Closed carriers characterised by the presence of antistatic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
図1は、第1実施形態に係るプロセス装置1を示す模式図である。プロセス装置1は、例えば、スパッタ装置、ドライエッチング装置、プラズマCVD装置などである。プロセス装置1は、例えば、半導体ウェーハ、ガラス基板、樹脂ディスクなどの基板を処理するために用いられる。
図6は、第2実施形態に係るプロセス装置5を示す模式図である。プロセス装置5は、減圧チャンバ10と、基板ホルダ20と、静電チャック30と、クランプ回路40と、を備える。プロセス装置5においても、静電チャック30に対する電磁ノイズの影響を抑制する構成が設けられる。
Claims (6)
- 基板保持部に配置され、誘電体と前記誘電体の内部に配置された電極とを含む静電チャックと、
前記静電チャックの前記電極に電気的に接続された回路と、
前記回路に電気的に接続された第1アース線であって、絶縁性被覆を介して金属によりシールドされた第1アース線と、
を備えたプロセス装置。 - 前記基板保持部および前記回路を囲む筐体をさらに備え、
前記筐体は、前記第1アース線により接地され、
前記回路は、前記筐体に第2アース線を介して電気的に接続され、前記筐体を介して接地される請求項1記載のプロセス装置。 - 前記第2アース線は、絶縁性被覆を介して金属によりシールドされる請求項2記載のプロセス装置。
- 前記回路は、前記第1アース線により直接接地される請求項1記載のプロセス装置。
- 前記基板保持部および前記回路を囲む筐体をさらに備え、
前記第1アース線は、前記筐体から電気的に分離され、前記筐体の外側において接地される請求項4記載のプロセス装置。 - 基板保持部に配置され、誘電体と前記誘電体の内部に配置された電極とを含む静電チャックと、
前記静電チャックの電極に電気的に接続された第1回路と、
前記回路に電気的に接続されたアース線と、
前記アース線に流れる電流を検出する電流センサと、
前記第1回路および前記電流センサに電気的に接続された第2回路と、
を備え、
前記第2回路は、前記電流センサにより検出された電流値を受け、前記第1回路から前記静電チャックの前記電極に出力される電位の変化量と前記電流値との相関関係に基づいた補償電圧を前記第1回路の出力に加えるように構成されたプロセス装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018194754A JP7209508B2 (ja) | 2018-10-16 | 2018-10-16 | プロセス装置 |
TW108104959A TW202017084A (zh) | 2018-10-16 | 2019-02-14 | 製程裝置 |
KR1020190019133A KR20200042830A (ko) | 2018-10-16 | 2019-02-19 | 프로세스 장치 |
CN201910126608.1A CN111063629A (zh) | 2018-10-16 | 2019-02-20 | 制程装置 |
US16/299,464 US20200118859A1 (en) | 2018-10-16 | 2019-03-12 | Apparatus for processing substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018194754A JP7209508B2 (ja) | 2018-10-16 | 2018-10-16 | プロセス装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020064916A true JP2020064916A (ja) | 2020-04-23 |
JP7209508B2 JP7209508B2 (ja) | 2023-01-20 |
Family
ID=70162320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018194754A Active JP7209508B2 (ja) | 2018-10-16 | 2018-10-16 | プロセス装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20200118859A1 (ja) |
JP (1) | JP7209508B2 (ja) |
KR (1) | KR20200042830A (ja) |
CN (1) | CN111063629A (ja) |
TW (1) | TW202017084A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10388493B2 (en) * | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525679U (ja) * | 1991-09-13 | 1993-04-02 | 矢崎総業株式会社 | シールドコネクタ |
JPH06326176A (ja) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | 自己バイアス測定方法及び装置並びに静電吸着装置 |
JPH0864573A (ja) * | 1994-06-03 | 1996-03-08 | Applied Materials Inc | プラズマリアクタ内の静電チャックの洗浄 |
JPH0946080A (ja) * | 1995-07-28 | 1997-02-14 | Aichi Corp | 電子装置のシールド装置 |
JP2001291980A (ja) * | 2000-04-07 | 2001-10-19 | Oki Electric Ind Co Ltd | フレームアース接続構造 |
JP2002313785A (ja) * | 2001-04-17 | 2002-10-25 | Anelva Corp | 高周波プラズマ処理装置 |
JP2009170509A (ja) * | 2008-01-11 | 2009-07-30 | Hitachi High-Technologies Corp | ヒータ内蔵静電チャックを備えたプラズマ処理装置 |
US20140305467A1 (en) * | 2006-06-13 | 2014-10-16 | Centre National De La Recherche Scientifique (Cnrs) | Cleaning device and cleaning process for a plasma reactor |
JP2017211346A (ja) * | 2016-05-27 | 2017-11-30 | 日本特殊陶業株式会社 | 微粒子検出システム |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090109595A1 (en) * | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
JP6399402B2 (ja) * | 2015-02-20 | 2018-10-03 | Smc株式会社 | イオナイザ |
-
2018
- 2018-10-16 JP JP2018194754A patent/JP7209508B2/ja active Active
-
2019
- 2019-02-14 TW TW108104959A patent/TW202017084A/zh unknown
- 2019-02-19 KR KR1020190019133A patent/KR20200042830A/ko not_active Application Discontinuation
- 2019-02-20 CN CN201910126608.1A patent/CN111063629A/zh active Pending
- 2019-03-12 US US16/299,464 patent/US20200118859A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525679U (ja) * | 1991-09-13 | 1993-04-02 | 矢崎総業株式会社 | シールドコネクタ |
JPH06326176A (ja) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | 自己バイアス測定方法及び装置並びに静電吸着装置 |
JPH0864573A (ja) * | 1994-06-03 | 1996-03-08 | Applied Materials Inc | プラズマリアクタ内の静電チャックの洗浄 |
JPH0946080A (ja) * | 1995-07-28 | 1997-02-14 | Aichi Corp | 電子装置のシールド装置 |
JP2001291980A (ja) * | 2000-04-07 | 2001-10-19 | Oki Electric Ind Co Ltd | フレームアース接続構造 |
JP2002313785A (ja) * | 2001-04-17 | 2002-10-25 | Anelva Corp | 高周波プラズマ処理装置 |
US20140305467A1 (en) * | 2006-06-13 | 2014-10-16 | Centre National De La Recherche Scientifique (Cnrs) | Cleaning device and cleaning process for a plasma reactor |
JP2009170509A (ja) * | 2008-01-11 | 2009-07-30 | Hitachi High-Technologies Corp | ヒータ内蔵静電チャックを備えたプラズマ処理装置 |
JP2017211346A (ja) * | 2016-05-27 | 2017-11-30 | 日本特殊陶業株式会社 | 微粒子検出システム |
Also Published As
Publication number | Publication date |
---|---|
KR20200042830A (ko) | 2020-04-24 |
CN111063629A (zh) | 2020-04-24 |
JP7209508B2 (ja) | 2023-01-20 |
TW202017084A (zh) | 2020-05-01 |
US20200118859A1 (en) | 2020-04-16 |
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