CN111063629A - 制程装置 - Google Patents
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Abstract
本发明的实施方式提供一种具有能稳定地保持被处理基板的静电吸盘的制程装置。实施方式的制程装置具有：静电吸盘，配置在基板保持部，且包含电介质及配置在所述电介质内部的电极；电路，电连接于所述静电吸盘的所述电极；及第1接地线，电连接于所述电路。所述第1接地线经由绝缘性包覆层而被金属屏蔽。
Description
[相关申请案]
本申请案享有以日本专利申请案2018-194754号(申请日：2018年10月16日)为基础申请案的有限权。本申请通过参考该基础申请案而包含该基础申请的全部内容。
技术领域
实施方式涉及一种制程装置。
背景技术
在减压条件下对半导体晶片等被处理基板进行处理的制程装置多具有用于将被处理基板固定在基板座上的静电吸盘。为了制程装置中的处理的再现性，重要的是利用静电吸盘稳定地保持被处理基板。
发明内容
实施方式提供一种具有能稳定地保持被处理基板的静电吸盘的制程装置。
实施方式的制程装置具有：静电吸盘，配置在基板保持部，且包含电介质及配置在所述电介质内部的电极；电路，电连接于所述静电吸盘的所述电极；及第1接地线，电连接于所述电路。所述第1接地线经由绝缘性包覆层而被金属屏蔽。
附图说明
图1是表示第1实施方式的制程装置的示意图。
图2(a)及(b)是表示第1实施方式的制程装置的动作的示意图。
图3是表示第1实施方式的制程装置的特性的图表。
图4(a)及(b)是表示第1实施方式的变形例中的制程装置的示意图。
图5是表示第1实施方式的接地线的屏蔽构造的示意图。
图6是表示第2实施方式的制程装置的示意图。
具体实施方式
以下，参照附图说明实施方式。对于附图中的同一部分标注同一编号，并适当省略详细说明，仅说明不同部分。另外，附图是示意性或概念性的，各部分的厚度与宽度的关系、部分之间的大小的比率等未必要与实际的相同。而且，即便表示相同部分，在不同附图中有时也会以不同的尺寸、比率来表示。
(第1实施方式)
图1是表示第1实施方式的制程装置1的示意图。制程装置1例如为溅镀装置、干式蚀刻装置、等离子CVD装置等。制程装置1例如用于对半导体晶片、玻璃基板、树脂盘等基板进行处理。
如图1所示，制程装置1具有减压腔室10、基板座20、静电吸盘30及钳位电路40。静电吸盘30例如配置在减压腔室10内部的基板座20之上。被处理基板SB载置在静电吸盘30之上。
静电吸盘30具有例如电介质33、电极35及电极37。电极35及电极37配置在电介质33内部。电介质33含有例如氧化铝、氮化铝等陶瓷、或聚酰亚胺等树脂。
被处理基板SB是以隔着一部分电介质33而与电极35及电极37相向的方式载置。被处理基板SB通过在给予了规定电位的电极35及电极37之间产生作用的库仑力、约翰逊-拉别克力或梯度力等而被吸附、固定在电介质33。
此处，表示了在电介质33的内部配置有2个极性的电极的双极型静电吸盘的示例，但实施方式并不限于该示例。也可为例如，将具有正或负的一种极性的电极配置在电介质33的内部的单极型静电吸盘。
钳位电路40配置在减压腔室10的外侧，且电连接于电极35及电极37。钳位电路40向电极35及电极37供给规定电位。而且，钳位电路40通过接地线43而接地。
接地线43例如被金属箔45屏蔽。接地线43例如被绝缘性树脂包覆，且被金属箔45覆盖。而且，也可并不利用金属箔45进行屏蔽，而是将同轴线缆等屏蔽线用作接地线43。
图2(a)及(b)是表示第1实施方式的制程装置的动作的示意图。图2(a)是表示实施方式的制程装置1的模式图，图2(b)是表示比较例中的制程装置2的示意图。
如图2(a)所示，静电吸盘30的电极35被供给正电位V1，电极37被供给负电位V2。由此，在被处理基板SB的与电极35相向的部分感应到负电荷，在与电极37相向的部分感应到正电荷。结果，被处理基板SB通过例如在电极35及电极37之间产生作用的库仑力而被固定在静电吸盘30之上。例如，负电位V2的绝对值等于正电位V1，被处理基板SB被均等的吸附力稳定地保持。
图2(b)所示的制程装置2中，钳位电路40的接地线43未被屏蔽。因此，钳位电路40上，接地线43成为天线，会受到外部产生的电磁噪音的影响。例如，接地线43上产生因电磁噪音引起的感应电流，电荷填充到钳位电路40的寄生电容。因此，钳位电路40之中感应到噪音电压VDS，并例如重叠于供给到静电吸盘30的正电位V1及负电位V2。
例如，当噪音电压VDS为正电压时，电极35的正电位V1上升，电极37的负电位V2下降。因此，例如，在电极35与被处理基板SB之间产生作用的库仑力变大，在电极37与被处理基板SB之间产生作用的库仑力变小。即，将被处理基板SB吸附在静电吸盘30之上的力会产生偏差。因此，有时，在被固定在静电吸盘30之上的被处理基板的面内，制程条件发生变化，从而无法均匀地对被处理基板SB进行处理。例如，经由静电吸盘30及基板座20释放到外部的热产生偏差，使得被处理基板SB的温度分布变得不均匀。结果，有时，被处理基板的蚀刻速度、或被处理基板上形成的膜的沉积速度变得不均匀。
而且，当使被处理基板SB从静电吸盘30之上移动时，向电极35供给负电位，向电极37供给正电位。由此，被处理基板SB中感应到的电荷分散，对被处理基板SB产生作用的吸附力消失。此时，若钳位电路40中感应到噪音电压VDS，则有时，被处理基板SB的电荷的分散会发生延迟从而无法使被处理基板SB与静电吸盘30分离，即发生所谓的搬送失误。
图3是表示第1实施方式的制程装置1的特性的图表。横轴表示被处理基板SB保持在静电吸盘30之上的时间，纵轴表示电极35及电极37的电位变动量ΔV。
图3中，表示已屏蔽接地线43、及未屏蔽接地线43时的电位变动量ΔV。此处，电位变动量ΔV例如为供给到电极35及电极37的电位的变化量。即，电极35的电位为V1+ΔV，电极37的电位为V2+ΔV。
如图3所示，当未屏蔽接地线43时，电极35及电极37的电位大幅变动。另一方面，当已屏蔽接地线43时，电极35及电极37的电位稳定。这样，通过屏蔽接地线43，能使电极35及电极37的电位稳定，从而将被处理基板SB稳定地保持在静电吸盘30之上。结果，能提高制程装置1中被处理基板SB的处理条件的再现性，且能避免搬送失误。
图4(a)及(b)是表示第1实施方式的变形例中的制程装置3及4的示意图。制程装置3及4还具有收容减压腔室10的壳体50。而且，壳体50的内部配置有包含钳位电路40的多个电路。
图4(a)所示的制程装置3中，壳体50经由接地线53而接地。接地线53例如被金属箔55屏蔽。接地线53也可为同轴线缆等屏蔽线。
在壳体50的内部，配置有减压腔室10、钳位电路40、高频电路60及驱动电路70。钳位电路40电连接于配置在减压腔室10内部的静电吸盘30。高频电路60例如电连接于配置在减压腔室10内部的放电用电极(未图示)，用于使减压腔室10的内部激发等离子。驱动电路70例如对被处理基板SB的搬送系统(未图示)、针对减压腔室10内部的气体供给系统(未图示)等。
钳位电路40、高频电路60及驱动电路70分别经由壳体50而接地。钳位电路40经由接地线47而电连接于壳体50。而且，接地线47例如被金属箔49屏蔽。接地线47也可为同轴线缆等屏蔽线。
例如，若壳体50为具有遮蔽电磁噪音的屏蔽功能的构造，则钳位电路40、高频电路60及驱动电路70受到保护而不会受到外部的电磁噪音的影响。钳位电路40例如构成为，被覆盖接地线47的金属箔49屏蔽，抑制高频电路60或驱动电路70中产生的电磁噪音的影响。而且，当壳体50内部不存在电磁噪音的产生源时，有时也会不利用金属箔49屏蔽。
当壳体50不具有屏蔽功能时，也能通过利用金属箔49屏蔽接地线47并利用金属箔55屏蔽接地线53，来抑制电磁噪音对钳位电路40的影响。
图4(b)所示的制程装置4中，钳位电路40经由接地线43直接接地。接地线43例如被金属箔45屏蔽。由此，能抑制来自外部的电磁噪音、及高频电路60或驱动电路70上产生的电磁噪音对钳位电路40的影响。
这样，实施方式的制程装置3及4中，能抑制电磁噪音对钳位电路40的影响，将被处理基板SB稳定地保持在静电吸盘30之上。而且，能避免使被处理基板SB从静电吸盘30之上移动时的搬送失误。
图5是表示第1实施方式的制程装置的接地线43的屏蔽构造80的示意图。接地线43例如被绝缘性树脂包覆。接地线43被屏蔽罩83覆盖。屏蔽罩83具有将例如铜箔、铝箔等金属箔贴附在树脂制的罩体的内侧的构造。
(第2实施方式)
图6是表示第2实施方式的制程装置5的示意图。制程装置5具有减压腔室10、基板座20、静电吸盘30及钳位电路40。制程装置5中，也设有抑制电磁噪音对静电吸盘30的影响的结构。
如图6所示，基板座20是以将基板保持在减压腔室10内部的方式构成。静电吸盘30配置在基板座20之上，将被处理基板SB固定在基板座20上。钳位电路40电连接于静电吸盘30的电极35及电极37。钳位电路40经由接地线43而接地。该示例中，未对接地线43进行屏蔽。
制程装置5还具有电流传感器93及偏移控制电路95。电流传感器93检测钳位电路40的接地线43上流动的电流。电流传感器93例如为钳流表。偏移控制电路95构成为，根据电流传感器93的输出而施加用于将钳位电路40的输出保持为一定的补偿电压。
例如，当因电磁噪音而使接地线43感应到感应电流IDS时，电流传感器93输出与感应电流IDS的大小及方向相应的信号。偏移控制电路95接受电流传感器93的输出，例如，将施加了补偿电压的电位输出到钳位电路40，该补偿电压用于抵消由感应电流IDS感应的噪音电压VDS。
例如构成为，偏移控制电路95根据感应电流IDS与噪音电压VDS的相关关系而供给用于抵消噪音电压VDS的补偿电压，钳位电路40对规定电压V1及V2(参照图2(b))施加补偿电压而进行输出。偏移控制电路95例如包含存储感应电流IDS与噪音电压VDS的相关关系的存储部，且输出与电流传感器93的输出相应的补偿电压。而且，偏移控制电路95也可构成为，代替电流传感器93而检测钳位电路40内部的电位，且将依据该电位与噪音电压VDS的相关关系而得的补偿电压加入到钳位电路40的输出中。
由此，能减轻电磁噪音对被供给到静电吸盘30的电极35及电极37的电位的影响，从而能稳定地保持被处理基板SB。结果，能提高制程装置5的制程条件的再现性，而且能避免搬送失误等故障。
另外，上文所述的示例中，钳位电路40与偏移控制电路95分离，但实施方式并不限于此。例如，钳位电路40与偏移控制电路95也可为一体构成的电路。
已说明了本发明的若干实施方式，但这些实施方式是作为示例提出，并不用于限定发明范围。这些新颖的实施方式可以其他多种方式实施，能在不脱离发明主旨的范围内进行各种省略、替换、变更。这些实施方式及其变形包含于发明范围或主旨中，且包含于权利要求书中记载的发明及与其同等的范围中。
[符号的说明]
1、2、3、4、5 制程装置
10 减压腔室
20 基板座
30 静电吸盘
33 电介质
35、37 电极
40 钳位电路
43、47、53 接地线
45、49、55 金属箔
50 壳体
60 高频电路
70 驱动电路
80 屏蔽构造
83 屏蔽罩
93 电流传感器
95 偏移控制电路
SB 被处理基板
IDS 感应电流
VDS 噪音电压
Claims (6)
1.一种制程装置，具有：
静电吸盘，配置在基板保持部，且包含电介质及配置在所述电介质内部的电极；
电路，电连接于所述静电吸盘的所述电极；及
第1接地线，电连接于所述电路，且经由绝缘性包覆层而被金属屏蔽。
2.根据权利要求1所述的制程装置，其中
还具有包围所述基板保持部及所述电路的壳体，
所述壳体经由所述第1接地线而接地，
所述电路经由第2接地线而电连接于所述壳体，且经由所述壳体而接地。
3.根据权利要求2所述的制程装置，其中
所述第2接地线经由绝缘性包覆层而被金属屏蔽。
4.根据权利要求1所述的制程装置，其中
所述电路经由所述第1接地线直接接地。
5.根据权利要求4所述的制程装置，其中
还具有包围所述基板保持部及所述电路的壳体，
所述第1接地线与所述壳体电分离，且在所述壳体的外侧接地。
6.一种制程装置，具有：
静电吸盘，配置在基板保持部，且包含电介质及配置在所述电介质内部的电极；
第1电路，电连接于所述静电吸盘的电极；
接地线，电连接于所述电路；
电流传感器，检测所述接地线上流动的电流；及
第2电路，电连接于所述第1电路及所述电流传感器；
所述第2电路构成为，接受所述电流传感器所检测到的电流值，将依据从所述第1电路输出到所述静电吸盘的所述电极的电位的变化量与所述电流值的相关关系所得的补偿电压，加入到所述第1电路的输出中。
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| JP2018-194754 | 2018-10-16 | ||
| JP2018194754A JP7209508B2 (ja) | 2018-10-16 | 2018-10-16 | プロセス装置 |
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| JP (1) | JP7209508B2 (zh) |
| KR (1) | KR20200042830A (zh) |
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| JPH06326176A (ja) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | 自己バイアス測定方法及び装置並びに静電吸着装置 |
| US5507874A (en) * | 1994-06-03 | 1996-04-16 | Applied Materials, Inc. | Method of cleaning of an electrostatic chuck in plasma reactors |
| JP2001291980A (ja) * | 2000-04-07 | 2001-10-19 | Oki Electric Ind Co Ltd | フレームアース接続構造 |
| US20090109595A1 (en) * | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
| US20090178764A1 (en) * | 2008-01-11 | 2009-07-16 | Hitachi High-Technologies Corporation | Plasma processing apparatus including electrostatic chuck with built-in heater |
| CN105914584A (zh) * | 2015-02-20 | 2016-08-31 | Smc株式会社 | 离子发生器 |
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|---|---|---|---|---|
| JPH0946080A (ja) * | 1995-07-28 | 1997-02-14 | Aichi Corp | 電子装置のシールド装置 |
| JP2002313785A (ja) | 2001-04-17 | 2002-10-25 | Anelva Corp | 高周波プラズマ処理装置 |
| FR2902029B1 (fr) | 2006-06-13 | 2009-01-23 | Centre Nat Rech Scient | Dispositif et procede de nettoyage d'un reacteur par plasma |
| JP6831181B2 (ja) | 2016-05-27 | 2021-02-17 | 日本特殊陶業株式会社 | 微粒子検出システム |
-
2018
- 2018-10-16 JP JP2018194754A patent/JP7209508B2/ja active Active
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2019
- 2019-02-14 TW TW108104959A patent/TW202017084A/zh unknown
- 2019-02-19 KR KR1020190019133A patent/KR20200042830A/ko not_active Application Discontinuation
- 2019-02-20 CN CN201910126608.1A patent/CN111063629A/zh active Pending
- 2019-03-12 US US16/299,464 patent/US20200118859A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304067A (en) * | 1991-09-13 | 1994-04-19 | Yazaki Corporation | Shielded connector |
| JPH06326176A (ja) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | 自己バイアス測定方法及び装置並びに静電吸着装置 |
| US5507874A (en) * | 1994-06-03 | 1996-04-16 | Applied Materials, Inc. | Method of cleaning of an electrostatic chuck in plasma reactors |
| JP2001291980A (ja) * | 2000-04-07 | 2001-10-19 | Oki Electric Ind Co Ltd | フレームアース接続構造 |
| US20090109595A1 (en) * | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
| US20090178764A1 (en) * | 2008-01-11 | 2009-07-16 | Hitachi High-Technologies Corporation | Plasma processing apparatus including electrostatic chuck with built-in heater |
| CN105914584A (zh) * | 2015-02-20 | 2016-08-31 | Smc株式会社 | 离子发生器 |
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| Publication number | Publication date |
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| JP7209508B2 (ja) | 2023-01-20 |
| KR20200042830A (ko) | 2020-04-24 |
| JP2020064916A (ja) | 2020-04-23 |
| US20200118859A1 (en) | 2020-04-16 |
| TW202017084A (zh) | 2020-05-01 |
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