JP2020061579A5 - - Google Patents
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- Publication number
- JP2020061579A5 JP2020061579A5 JP2020001679A JP2020001679A JP2020061579A5 JP 2020061579 A5 JP2020061579 A5 JP 2020061579A5 JP 2020001679 A JP2020001679 A JP 2020001679A JP 2020001679 A JP2020001679 A JP 2020001679A JP 2020061579 A5 JP2020061579 A5 JP 2020061579A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ultraviolet light
- light emitting
- emitting diode
- diode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 44
- 239000002184 metal Substances 0.000 claims 14
- 239000013078 crystal Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 230000006798 recombination Effects 0.000 claims 1
- 238000005215 recombination Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014090632 | 2014-04-24 | ||
| JP2014090632 | 2014-04-24 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015017909A Division JP2015216352A (ja) | 2014-04-24 | 2015-01-30 | 紫外発光ダイオードおよびそれを備える電気機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020061579A JP2020061579A (ja) | 2020-04-16 |
| JP2020061579A5 true JP2020061579A5 (enExample) | 2021-05-06 |
| JP7100903B2 JP7100903B2 (ja) | 2022-07-14 |
Family
ID=54599251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020001679A Active JP7100903B2 (ja) | 2014-04-24 | 2020-01-08 | 紫外発光ダイオードおよびそれを備える電気機器 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7100903B2 (enExample) |
| KR (1) | KR102300718B1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102329719B1 (ko) | 2015-02-23 | 2021-11-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 라이트 유닛 |
| WO2017134713A1 (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
| JP6803411B2 (ja) * | 2017-02-17 | 2020-12-23 | Ｄｏｗａエレクトロニクス株式会社 | 深紫外発光素子およびその製造方法 |
| JP6727185B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体発光素子 |
| JP7291357B1 (ja) | 2022-02-24 | 2023-06-15 | 国立研究開発法人理化学研究所 | 紫外発光素子およびそれを備える電気機器 |
| CN117374189B (zh) * | 2023-09-28 | 2025-03-28 | 华引芯（武汉）科技有限公司 | 一种发光元件的制备方法及发光元件 |
| KR20250169949A (ko) | 2024-05-27 | 2025-12-04 | 웨이브로드 주식회사 | 핫 셀프스플릿 공정을 통한 박막형 칩 구조의 고출력 자외선 발광소자 및 그 제조방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4993435B2 (ja) * | 2006-03-14 | 2012-08-08 | スタンレー電気株式会社 | 窒化物半導体発光素子の製造方法 |
| JP4538476B2 (ja) | 2007-08-27 | 2010-09-08 | 独立行政法人理化学研究所 | 半導体構造の形成方法 |
| DE102009034359A1 (de) * | 2009-07-17 | 2011-02-17 | Forschungsverbund Berlin E.V. | P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich |
| KR101636182B1 (ko) * | 2010-02-24 | 2016-07-04 | 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 | 질화물 반도체 다중 양자 장벽을 갖는 발광 소자 및 그 제조 방법 |
| US9142741B2 (en) | 2011-06-15 | 2015-09-22 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
| JP5514920B2 (ja) | 2012-01-13 | 2014-06-04 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物エピタキシャル基板および該基板を用いた深紫外発光素子 |
| JP5774650B2 (ja) | 2013-08-13 | 2015-09-09 | 株式会社東芝 | 半導体発光素子 |
-
2014
- 2014-10-30 KR KR1020140149643A patent/KR102300718B1/ko active Active
-
2020
- 2020-01-08 JP JP2020001679A patent/JP7100903B2/ja active Active
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