JP2020053475A - 薄膜トランジスタ及び表示装置 - Google Patents

薄膜トランジスタ及び表示装置 Download PDF

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Publication number
JP2020053475A
JP2020053475A JP2018179131A JP2018179131A JP2020053475A JP 2020053475 A JP2020053475 A JP 2020053475A JP 2018179131 A JP2018179131 A JP 2018179131A JP 2018179131 A JP2018179131 A JP 2018179131A JP 2020053475 A JP2020053475 A JP 2020053475A
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JP
Japan
Prior art keywords
layer
insulating layer
gate insulating
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018179131A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020053475A5 (https=
Inventor
将志 津吹
Masashi Tsubuki
将志 津吹
達也 戸田
Tatsuya Toda
達也 戸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2018179131A priority Critical patent/JP2020053475A/ja
Priority to PCT/JP2019/030207 priority patent/WO2020066288A1/ja
Publication of JP2020053475A publication Critical patent/JP2020053475A/ja
Priority to US17/199,991 priority patent/US12010871B2/en
Publication of JP2020053475A5 publication Critical patent/JP2020053475A5/ja
Priority to US18/671,060 priority patent/US20240315077A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2018179131A 2018-09-25 2018-09-25 薄膜トランジスタ及び表示装置 Pending JP2020053475A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018179131A JP2020053475A (ja) 2018-09-25 2018-09-25 薄膜トランジスタ及び表示装置
PCT/JP2019/030207 WO2020066288A1 (ja) 2018-09-25 2019-08-01 薄膜トランジスタ及び表示装置
US17/199,991 US12010871B2 (en) 2018-09-25 2021-03-12 Thin film transistor and display device
US18/671,060 US20240315077A1 (en) 2018-09-25 2024-05-22 Thin film transistor and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018179131A JP2020053475A (ja) 2018-09-25 2018-09-25 薄膜トランジスタ及び表示装置

Publications (2)

Publication Number Publication Date
JP2020053475A true JP2020053475A (ja) 2020-04-02
JP2020053475A5 JP2020053475A5 (https=) 2021-11-04

Family

ID=69950583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018179131A Pending JP2020053475A (ja) 2018-09-25 2018-09-25 薄膜トランジスタ及び表示装置

Country Status (3)

Country Link
US (2) US12010871B2 (https=)
JP (1) JP2020053475A (https=)
WO (1) WO2020066288A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI883063B (zh) * 2019-11-08 2025-05-11 日商半導體能源研究所股份有限公司 顯示裝置、顯示模組及電子裝置
US20210193049A1 (en) * 2019-12-23 2021-06-24 Apple Inc. Electronic Display with In-Pixel Compensation and Oxide Drive Transistors
US20240178127A1 (en) * 2022-11-30 2024-05-30 International Business Machines Corporation Isolated super via to middle metal line level
KR20240102257A (ko) * 2022-12-26 2024-07-03 엘지디스플레이 주식회사 표시 패널, 표시 장치 및 표시 장치 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054946A (ja) * 2009-08-07 2011-03-17 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2011141524A (ja) * 2009-10-21 2011-07-21 Semiconductor Energy Lab Co Ltd 表示装置、及び表示装置を有する電子機器
JP2016178279A (ja) * 2014-11-28 2016-10-06 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102222438B1 (ko) 2012-05-10 2021-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
JP2019186301A (ja) * 2018-04-04 2019-10-24 株式会社ジャパンディスプレイ 表示装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054946A (ja) * 2009-08-07 2011-03-17 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2011141524A (ja) * 2009-10-21 2011-07-21 Semiconductor Energy Lab Co Ltd 表示装置、及び表示装置を有する電子機器
JP2016178279A (ja) * 2014-11-28 2016-10-06 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する表示装置

Also Published As

Publication number Publication date
US20210202639A1 (en) 2021-07-01
WO2020066288A1 (ja) 2020-04-02
US12010871B2 (en) 2024-06-11
US20240315077A1 (en) 2024-09-19

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