JP2020052430A - 計測装置及び計測方法、並びに露光装置 - Google Patents
計測装置及び計測方法、並びに露光装置 Download PDFInfo
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- JP2020052430A JP2020052430A JP2019229309A JP2019229309A JP2020052430A JP 2020052430 A JP2020052430 A JP 2020052430A JP 2019229309 A JP2019229309 A JP 2019229309A JP 2019229309 A JP2019229309 A JP 2019229309A JP 2020052430 A JP2020052430 A JP 2020052430A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
以下、第1の実施形態について、図1〜図11に基づいて説明する。
次に第2の実施形態に係る露光装置について説明する。本第2の実施形態の露光装置は、前述の第1の実施形態に係る露光装置10とは、ウエハステージ上の計測マークの位置が異なるのみなので、以下相違点に付いてのみ説明し、第1の実施形態と同じ構成、及び機能を有する要素については、第1の実施形態と同一の符号を用いるととともに、その説明を省略する。
Claims (17)
- 第1の方向に移動する物体に対向する対物レンズと、
前記第1の方向に移動する物体に設けられた格子マークに対して、前記対物レンズを介して計測光を照射する照射系と、
前記計測光に基づく前記格子マークからの回折光を、前記対物レンズを介して受光するビーム受光系と、を有し、
前記照射系は、前記計測光を前記第1の方向に動かしつつ、前記第1の方向に移動する前記格子マークに前記計測光を照射する計測装置。 - 前記第1の方向に動かされる前記計測光は、前記対物レンズの中央部を透過して前記格子マークに照射される請求項1に記載の計測装置。
- 前記対物レンズの前記中央部を透過した前記計測光は、前記第1の方向に交差する第2の方向から前記格子マークに照射される請求項2に記載の計測装置。
- 前記計測光に基づく前記格子マークからの前記回折光は、前記対物レンズの周辺部によって前記ビーム受光系に向けて曲げられる請求項1〜3のいずれか一項に記載の計測装置。
- 前記第1の方向に動かされる前記計測光は、前記対物レンズの一方側から前記対物レンズに入射して他方側に向けて透過し、前記格子マークからの前記回折光は前記対物レンズの他方側から前記対物レンズに入射する請求項1〜4のいずれか一項に記載の計測装置。
- 前記計測装置は、さらに、前記計測光の移動速度を制御する制御系を有する請求項1〜5のいずれか一項に記載の計測装置。
- 前記制御系は、さらに、移動する前記物体の移動速度を制御する請求項6に記載の計測装置。
- 前記計測装置は、さらに、前記ビーム受光系により受光される前記回折光に基づいて前記格子マークの位置情報を求める演算系を有する請求項1〜7のいずれか一項に記載の計測装置。
- 露光装置であって、
請求項8に記載の計測装置と、
前記演算系によって求められた前記位置情報に基づいて前記物体の位置を制御する位置制御装置と、
前記物体にエネルギビームを照射して、前記物体に所定のパターンを形成するパターン形成装置と、
を有する露光装置。 - 物体に設けられた格子マークの位置情報を計測する計測方法であって、
第1の方向に前記物体を移動させることと、
前記第1の方向に移動する前記物体の前記格子マークに対して計測光を対物レンズを介して照射することと、
前記計測光に基づく前記格子マークからの回折光を、前記対物レンズを介してビーム受光系で受光することと、を含み、
前記照射することは、前記計測光を前記第1の方向に動かしつつ、前記第1の方向に移動する前記格子マークに前記計測光を照射することを含む、計測方法。 - 前記第1の方向に動かされる前記計測光は、前記対物レンズの中央部を透過して前記格子マークに照射される請求項10に記載の計測方法。
- 前記対物レンズの前記中央部を透過した前記計測光は、前記第1の方向に交差する第2の方向から前記格子マークに照射される請求項11に記載の計測方法。
- 前記計測光に基づく前記格子マークからの前記回折光は、前記対物レンズの周辺部によって前記ビーム受光系に向けて曲げられる請求項10〜12のいずれか一項に記載の計測方法。
- 前記第1の方向に走査される前記計測光は、前記対物レンズの一方側から前記対物レンズに入射して他方側に向けて透過し、前記格子マークからの前記回折光は前記対物レンズの他方側から前記対物レンズに入射する請求項10〜13のいずれか一項に記載の計測方法。
- さらに、前記計測光の移動速度を制御すること、を含む請求項10〜14のいずれか一項に記載の計測方法。
- さらに、前記物体の移動速度を制御すること、を含む請求項15に記載の計測方法。
- さらに、前記ビーム受光系により受光される前記回折光に基づいて前記格子マークの位置情報を求めること、を含む請求項10〜16のいずれか一項に記載の計測方法。
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JP2018095988A Active JP6635277B2 (ja) | 2014-12-24 | 2018-05-18 | 移動体装置及び露光装置 |
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KR (4) | KR102009098B1 (ja) |
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WO2021004720A1 (en) | 2019-07-08 | 2021-01-14 | Asml Netherlands B.V. | Method for determining a center of a radiation spot, sensor and stage apparatus |
CN110926333B (zh) * | 2019-11-28 | 2021-10-15 | 上海华力集成电路制造有限公司 | 电子扫描方法以及电子扫描装置 |
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