JP2020043073A - ディスプレイ装置 - Google Patents
ディスプレイ装置 Download PDFInfo
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- JP2020043073A JP2020043073A JP2019165290A JP2019165290A JP2020043073A JP 2020043073 A JP2020043073 A JP 2020043073A JP 2019165290 A JP2019165290 A JP 2019165290A JP 2019165290 A JP2019165290 A JP 2019165290A JP 2020043073 A JP2020043073 A JP 2020043073A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 137
- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 28
- 238000005192 partition Methods 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 456
- 239000000463 material Substances 0.000 description 19
- 239000002096 quantum dot Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H01L33/58—Optical field-shaping elements
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Optical Filters (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
110 基板
120 発光層
130R,130G,130B 色変換層
140,140a 隔壁
150 絶縁層
152 第1絶縁層
154 第2絶縁層
160 第1電極
170,170a,170b 第2電極
182 第1反射層
184 第2反射層
Claims (29)
- 発光層と、
それぞれが前記発光層の一部領域上に配置され、前記発光層で発生した光を互いに異なる特定色の光に変換させる複数の色変換層と、
前記発光層の一部領域上に配置され、前記複数の色変換層を空間的に離隔配置させる1以上の隔壁と、
前記発光層と接し、前記複数の色変換層それぞれに対応する複数個の第1開口を含む第1絶縁層と、
前記第1絶縁層と、前記複数の色変換層との間に配置された第2絶縁層と、を含むディスプレイ装置。 - 前記第1絶縁層及び前記第2絶縁層のうち少なくとも一方の屈折率は1.6以下であることを特徴とする請求項1に記載のディスプレイ装置。
- 前記第1絶縁層及び前記第2絶縁層のうち少なくとも一方は、SiO2、SiN、Al2O3、TiO2のうち少なくとも一つを含むことを特徴とする請求項1に記載のディスプレイ装置。
- 前記発光層の上部表面と接し、前記発光層から入射された光を、前記発光層へと反射させる第1反射層をさらに含むことを特徴とする請求項1に記載のディスプレイ装置。
- 前記第1反射層の上部表面及び側面は、前記第1絶縁層によって覆われることを特徴とする請求項4に記載のディスプレイ装置。
- 前記第1反射層は、前記複数個の第1開口間に、前記第1開口から離隔して配置されることを特徴とする請求項4に記載のディスプレイ装置。
- それぞれが前記第1開口を介して前記発光層と接する複数個の第1電極をさらに含むことを特徴とする請求項1に記載のディスプレイ装置。
- 前記複数個の第1電極のうち少なくとも一つは、前記第1開口を介して前記発光層と接しながら前記第1絶縁層の上部表面に拡張された透明電極を含むことを特徴とする請求項7に記載のディスプレイ装置。
- 前記透明電極は、前記第1開口を介して露出された前記発光層の領域全体に接することを特徴とする請求項8に記載のディスプレイ装置。
- 前記透明電極に接する第1電極パッドをさらに含むことを特徴とする請求項8に記載のディスプレイ装置。
- 前記第1電極パッドは、前記透明電極のうち、前記第1開口と重ならない領域上に配置されることを特徴とする請求項10に記載のディスプレイ装置。
- 前記複数個の第1電極のうち少なくとも一つの上に配置され、前記第1開口と少なくとも一部領域が重なり合う第2開口を含む第2反射層、をさらに含むことを特徴とする請求項7に記載のディスプレイ装置。
- 前記第2反射層の少なくとも一部領域は、前記第1絶縁層と重なり合うことを特徴とする請求項12に記載のディスプレイ装置。
- 第2反射層は、反射特性が互いに異なる第1層及び第2層を含むことを特徴とする請求項12に記載のディスプレイ装置。
- 前記第1層は、前記発光層と対面し、
前記第2層は、前記複数の色変換層のうちいずれか一つと対面し、前記第1層の反射率より高い反射率を有する、ことを特徴とする請求項14に記載のディスプレイ装置。 - 前記複数個の第1電極のうち少なくとも一つは、
前記第1開口と重なり合う第3開口を含み、前記第1絶縁層の上部表面に拡張される反射電極、
を含むことを特徴とする請求項7に記載のディスプレイ装置。 - 前記第3開口の大きさは、前記第1開口の大きさより小さいことを特徴とする請求項16に記載のディスプレイ装置。
- 前記第2絶縁層は、前記第1開口及び前記第3開口を介して前記発光層と接することを特徴とする請求項16に記載のディスプレイ装置。
- 前記発光層と接する第2電極をさらに含むことを特徴とする請求項7に記載のディスプレイ装置。
- 前記複数個の第1電極は、前記複数の色変換層に一対一対応するように配置され、前記第2電極は、前記複数の色変換層のうち少なくとも一つに対応するように配置されることを特徴とする請求項19に記載のディスプレイ装置。
- 前記発光層は、順次に配置された第1半導体層、活性層及び第2半導体層を含み、
前記複数個の第1電極それぞれは、前記第2半導体層に接し、前記第2電極は、前記第1半導体層に接することを特徴とする請求項19に記載のディスプレイ装置。 - 前記第2電極は、
前記第1絶縁層を貫通し、前記第1半導体層に接する貫通電極と、
前記第1絶縁層上に配置されながら、前記貫通電極と接する第2電極パッドと、
を含むことを特徴とする請求項21に記載のディスプレイ装置。 - 前記第2電極は、前記第1半導体層の下部表面上に配置されることを特徴とする請求項21に記載のディスプレイ装置。
- 前記1以上の隔壁のうち少なくとも一部は、光を吸収するブラックマトリックス、レジン及びポリマーのうち少なくとも一つを含むことを特徴とする請求項1に記載のディスプレイ装置。
- 前記1以上の隔壁のうち少なくとも一部は、コアと、前記コアの側面を覆い包み、入射された光を反射させるシェルと、を含むことを特徴とする請求項1に記載のディスプレイ装置。
- 前記複数の色変換層は、赤色光を放出する赤色変換層、緑色光を放出する緑色変換層、及び青色光を放出する青色変換層のうち少なくとも一つを含むことを特徴とする請求項1に記載のディスプレイ装置。
- 前記発光層の下面上に配置され、入射された光を吸収する光吸収層をさらに含むことを特徴とする請求項1に記載のディスプレイ装置。
- 基板と、
前記基板上に提供される発光層と、
前記発光層の第1領域及び第2領域それぞれに提供される第1色変換層及び第2色変換層と、
前記第1色変換層と前記第2色変換層との間に提供される隔壁と、
前記発光層上に提供される第1絶縁層と、を含み、
前記第1絶縁層は、前記第1色変換層に対応する第1開口、及び前記第2色変換層に対応する第2開口を含むディスプレイ装置。 - 前記第1開口は、前記第1色変換層の真上に提供され、前記第2開口は、前記第2色変換層の真上に提供されることを特徴とする請求項28に記載のディスプレイ装置。
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Application Number | Priority Date | Filing Date | Title |
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KR1020180109721A KR102650659B1 (ko) | 2018-09-13 | 2018-09-13 | 디스플레이 장치 |
KR10-2018-0109721 | 2018-09-13 |
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JP2020043073A true JP2020043073A (ja) | 2020-03-19 |
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JP2019165290A Pending JP2020043073A (ja) | 2018-09-13 | 2019-09-11 | ディスプレイ装置 |
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US (2) | US10971543B2 (ja) |
EP (1) | EP3624198B1 (ja) |
JP (1) | JP2020043073A (ja) |
KR (1) | KR102650659B1 (ja) |
CN (1) | CN110896122A (ja) |
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CN110896122A (zh) | 2020-03-20 |
US20200091226A1 (en) | 2020-03-19 |
US10971543B2 (en) | 2021-04-06 |
US20210193733A1 (en) | 2021-06-24 |
US11450710B2 (en) | 2022-09-20 |
KR102650659B1 (ko) | 2024-03-25 |
EP3624198A2 (en) | 2020-03-18 |
KR20200030904A (ko) | 2020-03-23 |
EP3624198A3 (en) | 2020-06-10 |
EP3624198B1 (en) | 2023-01-18 |
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