JP2020026374A5 - - Google Patents

Download PDF

Info

Publication number
JP2020026374A5
JP2020026374A5 JP2018152319A JP2018152319A JP2020026374A5 JP 2020026374 A5 JP2020026374 A5 JP 2020026374A5 JP 2018152319 A JP2018152319 A JP 2018152319A JP 2018152319 A JP2018152319 A JP 2018152319A JP 2020026374 A5 JP2020026374 A5 JP 2020026374A5
Authority
JP
Japan
Prior art keywords
plane
measurement
measured
represent
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018152319A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020026374A (ja
JP7149767B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2018152319A priority Critical patent/JP7149767B2/ja
Priority claimed from JP2018152319A external-priority patent/JP7149767B2/ja
Priority to PCT/JP2019/031803 priority patent/WO2020036167A1/ja
Publication of JP2020026374A publication Critical patent/JP2020026374A/ja
Publication of JP2020026374A5 publication Critical patent/JP2020026374A5/ja
Application granted granted Critical
Publication of JP7149767B2 publication Critical patent/JP7149767B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018152319A 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座 Active JP7149767B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018152319A JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座
PCT/JP2019/031803 WO2020036167A1 (ja) 2018-08-13 2019-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018152319A JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

Publications (3)

Publication Number Publication Date
JP2020026374A JP2020026374A (ja) 2020-02-20
JP2020026374A5 true JP2020026374A5 (enExample) 2021-07-26
JP7149767B2 JP7149767B2 (ja) 2022-10-07

Family

ID=69525346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018152319A Active JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

Country Status (2)

Country Link
JP (1) JP7149767B2 (enExample)
WO (1) WO2020036167A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433586B2 (ja) * 2018-08-13 2024-02-20 株式会社レゾナック ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶
EP4060098A1 (de) * 2021-03-19 2022-09-21 SiCrystal GmbH Herstellungsverfahren für einen sic-volumeneinkristall inhomogener schraubenversetzungsverteilung und sic-substrat

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373104A (ja) * 1986-09-17 1988-04-02 Toshiba Corp 格子彎曲測定用ｘ線回折装置
JPH07101679B2 (ja) * 1988-11-01 1995-11-01 三菱電機株式会社 電子デバイス用ウエハ，ウエハ用棒状基材および電子デバイス
JP3239884B2 (ja) * 1989-12-12 2001-12-17 ソニー株式会社 半導体基板の製造方法
CN102543718A (zh) * 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP6241254B2 (ja) * 2013-12-17 2017-12-06 住友電気工業株式会社 単結晶の製造方法
JP6390628B2 (ja) * 2016-01-12 2018-09-19 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置
JP7433586B2 (ja) * 2018-08-13 2024-02-20 株式会社レゾナック ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶

Similar Documents

Publication Publication Date Title
JP2020026374A5 (enExample)
CN103635615B (zh) 碳化硅单晶、碳化硅晶片和半导体器件
Bindu et al. Estimation of lattice strain in ZnO nanoparticles: X-ray peak profile analysis
JP2008143772A5 (enExample)
US11905621B2 (en) SiC single crystal, method of manufacturing SiC ingot, and method of manufacturing SiC wafer
JPH1143398A (ja) ＧａＮ系結晶成長用基板およびその用途
JPWO2011093481A1 (ja) 窒化物系化合物半導体基板の製造方法及び窒化物系化合物半導体自立基板
JP2017108179A5 (enExample)
Poli et al. Degeneracy doubling and sublattice polarization in strain-induced pseudo-Landau levels
JP2020026376A5 (enExample)
CN109957839A (zh) SiC单晶的加工方法及SiC锭的制造方法
Zhou et al. Grazing incidence X-ray topographic studies of threading dislocations in hydrothermal grown ZnO single crystal substrates
Wang et al. Study of V and Y shape Frank-type Stacking Faults Formation in 4H-SiC epilayer
Kimura et al. Phase diagram on phase purity of InN grown pressurized‐reactor MOVPE
Bessolov et al. Semipolar gan layers grown on nanostructured Si (100) substrate
Yao et al. Crystallographic orientation and strain distribution in AlN seeds grown on 6H–SiC substrates by the PVT method
Wu et al. Controllable synthesis of rutile titania with novel curved surfaces
JP6448155B2 (ja) 低減亀裂ｉｉｉ族窒化物バルク結晶のためのシード選択および成長方法
Buß et al. Non‐and semipolar AlInN one‐dimensionally lattice‐matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN‐based devices
Epelbaum et al. Development of natural habit of large free‐nucleated AlN single crystals
TWI529965B (zh) Semiconductor epitaxial substrate
Zhou et al. Al incorporation in AlGaN on (112¯ 2) and (0 0 0 1) surface orientation
Riberi-Béridot In situ characterization by X-ray synchrotron imaging of the solidification of silicon for the photovoltaic applications: control of the grain structure and interaction with the defects and the impurities
Łucznik et al. C‐plane bowing in free standing GaN crystals grown by HVPE on GaN‐sapphire substrates with photolithographically patterned Ti masks
Malnič et al. Reachability relations in digraphs