JP2017108179A5 - - Google Patents
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- Publication number
- JP2017108179A5 JP2017108179A5 JP2017043780A JP2017043780A JP2017108179A5 JP 2017108179 A5 JP2017108179 A5 JP 2017108179A5 JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017108179 A5 JP2017108179 A5 JP 2017108179A5
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- silicon carbide
- orientation flat
- single crystal
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 27
- 229910010271 silicon carbide Inorganic materials 0.000 claims 27
- 239000000758 substrate Substances 0.000 claims 19
- 239000013078 crystal Substances 0.000 claims 13
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017043780A JP2017108179A (ja) | 2017-03-08 | 2017-03-08 | 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP2020122042A JP6930640B2 (ja) | 2017-03-08 | 2020-07-16 | 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017043780A JP2017108179A (ja) | 2017-03-08 | 2017-03-08 | 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015228517 Division | 2015-11-24 | 2015-11-24 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020122042A Division JP6930640B2 (ja) | 2017-03-08 | 2020-07-16 | 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017108179A JP2017108179A (ja) | 2017-06-15 |
| JP2017108179A5 true JP2017108179A5 (enExample) | 2018-08-16 |
Family
ID=59060158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017043780A Pending JP2017108179A (ja) | 2017-03-08 | 2017-03-08 | 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2017108179A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6585799B1 (ja) * | 2018-10-15 | 2019-10-02 | 昭和電工株式会社 | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 |
| US10611052B1 (en) * | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US20230059737A1 (en) * | 2020-01-29 | 2023-02-23 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device |
| JP7629755B2 (ja) * | 2021-03-03 | 2025-02-14 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置および熱処理方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
-
2017
- 2017-03-08 JP JP2017043780A patent/JP2017108179A/ja active Pending
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