JP2017108179A - 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Download PDF

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JP2017108179A
JP2017108179A JP2017043780A JP2017043780A JP2017108179A JP 2017108179 A JP2017108179 A JP 2017108179A JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017108179 A JP2017108179 A JP 2017108179A
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silicon carbide
main surface
single crystal
orientation flat
region
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JP2017108179A5 (enExample
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勉 堀
Tsutomu Hori
勉 堀
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Sumitomo Electric Industries Ltd
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JP2017043780A 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Pending JP2017108179A (ja)

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JP2020122042A JP6930640B2 (ja) 2017-03-08 2020-07-16 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021153351A1 (enExample) * 2020-01-29 2021-08-05
US11249027B2 (en) * 2018-10-15 2022-02-15 Showa Denko K.K. SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer
JP2022134459A (ja) * 2021-03-03 2022-09-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP2023134793A (ja) * 2019-05-17 2023-09-27 ウルフスピード インコーポレイテッド 緩和された正の湾曲を有する炭化ケイ素ウェーハを処理するための方法

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JP2008535761A (ja) * 2005-04-07 2008-09-04 クリー インコーポレイテッド 歪み、反り、及びｔｔｖが少ない７５ミリメートル炭化珪素ウェハ

Patent Citations (1)

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JP2008535761A (ja) * 2005-04-07 2008-09-04 クリー インコーポレイテッド 歪み、反り、及びｔｔｖが少ない７５ミリメートル炭化珪素ウェハ

Non-Patent Citations (5)

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Title
"Cree Silicon Carbide Substrates and Epitaxy", CREE社2013年SICウェハカタログ(MAT-CATALOG.00Q), JPN6019013802, 2013, US, pages 1 - 17, ISSN: 0004268561 *
A.A. BURK ET AL.: "SiC Epitaxial Layer Growth in a 6×150 mm Warm-Wall Planetary Reactor", MATERIALS SCIENCE FORUM, vol. 717-720, JPN6019013800, 2012, CH, pages 75 - 80, ISSN: 0004268563 *
J. QUAST ET AL.: "High Quality 150 mm 4H SiC wafers for Power Device Production", MATERIALS SCIENCE FORUM, vol. Vols. 821-823, JPN6019044974, 2015, CH, pages 56 - 59, ISSN: 0004268562 *
Y. GAO ET AL.: "High Quality 100 mm 4H-SiC Substrate", MATERIALS SCIENCE FORUM, JPN6019013801, 2015, CH, pages 51 - 55, ISSN: 0004268564 *
土谷秀一, 外２名: "４Ｈ−ＳｉＣ エピタキシャル成長における拡張欠陥の挙動", J. VAC. SOC. JPN., vol. 54, no. 6, JPN6019013803, 2011, JP, pages 353 - 361, ISSN: 0004268565 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11249027B2 (en) * 2018-10-15 2022-02-15 Showa Denko K.K. SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer
JP2023134793A (ja) * 2019-05-17 2023-09-27 ウルフスピード インコーポレイテッド 緩和された正の湾曲を有する炭化ケイ素ウェーハを処理するための方法
JPWO2021153351A1 (enExample) * 2020-01-29 2021-08-05
CN115003866A (zh) * 2020-01-29 2022-09-02 住友电气工业株式会社 碳化硅外延衬底及碳化硅半导体器件的制造方法
CN115003866B (zh) * 2020-01-29 2024-05-03 住友电气工业株式会社 碳化硅外延衬底及碳化硅半导体器件的制造方法
JP7632313B2 (ja) 2020-01-29 2025-02-19 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP2022134459A (ja) * 2021-03-03 2022-09-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP7629755B2 (ja) 2021-03-03 2025-02-14 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

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