JP2020025121A5 - - Google Patents

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Publication number
JP2020025121A5
JP2020025121A5 JP2019194259A JP2019194259A JP2020025121A5 JP 2020025121 A5 JP2020025121 A5 JP 2020025121A5 JP 2019194259 A JP2019194259 A JP 2019194259A JP 2019194259 A JP2019194259 A JP 2019194259A JP 2020025121 A5 JP2020025121 A5 JP 2020025121A5
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JP
Japan
Prior art keywords
electronic device
semiconductor material
electron transport
metal
compartment
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JP2019194259A
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English (en)
Japanese (ja)
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JP2020025121A (ja
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Priority claimed from EP14171326.3A external-priority patent/EP2887416B1/en
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Publication of JP2020025121A publication Critical patent/JP2020025121A/ja
Publication of JP2020025121A5 publication Critical patent/JP2020025121A5/ja
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JP2019194259A 2013-12-23 2019-10-25 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料 Pending JP2020025121A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP13199413.9 2013-12-23
EP13199413 2013-12-23
EP14171326.3 2014-06-05
EP14171326.3A EP2887416B1 (en) 2013-12-23 2014-06-05 N-doped semiconducting material comprising phosphine oxide matrix and metal dopant

Related Parent Applications (1)

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JP2016542211A Division JP6832704B2 (ja) 2013-12-23 2014-12-23 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料

Publications (2)

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JP2020025121A JP2020025121A (ja) 2020-02-13
JP2020025121A5 true JP2020025121A5 (enExample) 2020-10-08

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JP2016542211A Active JP6832704B2 (ja) 2013-12-23 2014-12-23 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料
JP2019194259A Pending JP2020025121A (ja) 2013-12-23 2019-10-25 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料

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JP2016542211A Active JP6832704B2 (ja) 2013-12-23 2014-12-23 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料

Country Status (7)

Country Link
US (3) US20160322568A1 (enExample)
EP (2) EP2887416B1 (enExample)
JP (2) JP6832704B2 (enExample)
KR (1) KR102339316B1 (enExample)
CN (1) CN106062986B (enExample)
ES (1) ES2673573T3 (enExample)
WO (1) WO2015097232A1 (enExample)

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