JP2020021800A5 - - Google Patents

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Publication number
JP2020021800A5
JP2020021800A5 JP2018143468A JP2018143468A JP2020021800A5 JP 2020021800 A5 JP2020021800 A5 JP 2020021800A5 JP 2018143468 A JP2018143468 A JP 2018143468A JP 2018143468 A JP2018143468 A JP 2018143468A JP 2020021800 A5 JP2020021800 A5 JP 2020021800A5
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JP
Japan
Prior art keywords
injection
rg1b
sealing material
region
injection step
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Application number
JP2018143468A
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English (en)
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JP2020021800A (ja
JP7065722B2 (ja
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Priority to JP2018143468A priority Critical patent/JP7065722B2/ja
Priority claimed from JP2018143468A external-priority patent/JP7065722B2/ja
Priority to US16/447,569 priority patent/US10861758B2/en
Priority to DE102019210588.2A priority patent/DE102019210588A1/de
Priority to CN201910683205.7A priority patent/CN110854078B/zh
Publication of JP2020021800A publication Critical patent/JP2020021800A/ja
Publication of JP2020021800A5 publication Critical patent/JP2020021800A5/ja
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Publication of JP7065722B2 publication Critical patent/JP7065722B2/ja
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Description

具体的には、注入工程では、注入装置が、液状の封止材4がs個の排出経路H1aから領域Rg1bへ排出されるように、各貫通孔H1の注入口In1に当該封止材4を注入する。注入工程は、領域Rg1(領域Rg1a,Rg1b)全体に、液状の封止材4が充填されるまで継続して行われる。
JP2018143468A 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法 Active JP7065722B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018143468A JP7065722B2 (ja) 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法
US16/447,569 US10861758B2 (en) 2018-07-31 2019-06-20 Semiconductor device, power conversion apparatus, and method of manufacturing semiconductor device
DE102019210588.2A DE102019210588A1 (de) 2018-07-31 2019-07-18 Halbleitervorrichtung, Leistungsumwandlungsgerät und Verfahren zum Herstellen einer Halbleitervorrichtung
CN201910683205.7A CN110854078B (zh) 2018-07-31 2019-07-26 半导体装置、电力变换装置以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018143468A JP7065722B2 (ja) 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2020021800A JP2020021800A (ja) 2020-02-06
JP2020021800A5 true JP2020021800A5 (ja) 2020-09-10
JP7065722B2 JP7065722B2 (ja) 2022-05-12

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ID=69168288

Family Applications (1)

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JP2018143468A Active JP7065722B2 (ja) 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法

Country Status (4)

Country Link
US (1) US10861758B2 (ja)
JP (1) JP7065722B2 (ja)
CN (1) CN110854078B (ja)
DE (1) DE102019210588A1 (ja)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09252062A (ja) 1996-03-18 1997-09-22 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH11121487A (ja) * 1997-10-14 1999-04-30 Oki Electric Ind Co Ltd 半導体素子の樹脂封止装置
JPH11297727A (ja) * 1998-04-10 1999-10-29 Dexter Kk 半導体チップの樹脂封着用ノズルと光センサーチップの製造方法
JP2009147030A (ja) 2007-12-13 2009-07-02 Panasonic Corp 半導体装置
JP5148445B2 (ja) 2008-10-06 2013-02-20 シャープ株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP5056717B2 (ja) 2008-10-16 2012-10-24 株式会社デンソー モールドパッケージの製造方法
JP2014082233A (ja) 2012-10-12 2014-05-08 Sumitomo Electric Ind Ltd 半導体装置及びその製造方法
JP6001473B2 (ja) * 2013-02-12 2016-10-05 トヨタ自動車株式会社 半導体装置の製造方法
JP2016025154A (ja) * 2014-07-17 2016-02-08 三菱電機株式会社 高耐電圧樹脂封止型半導体装置及び金型

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