JP2020015310A - 導電性三次元物品 - Google Patents
導電性三次元物品 Download PDFInfo
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- JP2020015310A JP2020015310A JP2019121146A JP2019121146A JP2020015310A JP 2020015310 A JP2020015310 A JP 2020015310A JP 2019121146 A JP2019121146 A JP 2019121146A JP 2019121146 A JP2019121146 A JP 2019121146A JP 2020015310 A JP2020015310 A JP 2020015310A
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- 239000000463 material Substances 0.000 claims abstract description 92
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- 239000002904 solvent Substances 0.000 claims description 55
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- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 36
- -1 aryl cycloalkane Chemical class 0.000 claims description 34
- 230000000087 stabilizing effect Effects 0.000 claims description 31
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- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 20
- 238000009835 boiling Methods 0.000 claims description 18
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- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 claims description 13
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- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical compound C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 claims description 12
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- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical class CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 claims 1
- OWEZJUPKTBEISC-UHFFFAOYSA-N decane-1,1-diamine Chemical compound CCCCCCCCCC(N)N OWEZJUPKTBEISC-UHFFFAOYSA-N 0.000 claims 1
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- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims 1
- IZKZIDXHCDIZKY-UHFFFAOYSA-N heptane-1,1-diamine Chemical compound CCCCCCC(N)N IZKZIDXHCDIZKY-UHFFFAOYSA-N 0.000 claims 1
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- AMJIVVJFADZSNZ-UHFFFAOYSA-N n-butylpentan-1-amine Chemical compound CCCCCNCCCC AMJIVVJFADZSNZ-UHFFFAOYSA-N 0.000 claims 1
- GMTCPFCMAHMEMT-UHFFFAOYSA-N n-decyldecan-1-amine Chemical compound CCCCCCCCCCNCCCCCCCCCC GMTCPFCMAHMEMT-UHFFFAOYSA-N 0.000 claims 1
- QHCCDDQKNUYGNC-UHFFFAOYSA-N n-ethylbutan-1-amine Chemical compound CCCCNCC QHCCDDQKNUYGNC-UHFFFAOYSA-N 0.000 claims 1
- ICVFPLUSMYSIFO-UHFFFAOYSA-N n-ethylpentan-1-amine Chemical compound CCCCCNCC ICVFPLUSMYSIFO-UHFFFAOYSA-N 0.000 claims 1
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Classifications
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/112—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using individual droplets, e.g. from jetting heads
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J3/00—Typewriters or selective printing or marking mechanisms characterised by the purpose for which they are constructed
- B41J3/407—Typewriters or selective printing or marking mechanisms characterised by the purpose for which they are constructed for marking on special material
- B41J3/4073—Printing on three-dimensional objects not being in sheet or web form, e.g. spherical or cubic objects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/165—Processes of additive manufacturing using a combination of solid and fluid materials, e.g. a powder selectively bound by a liquid binder, catalyst, inhibitor or energy absorber
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0545—Dispersions or suspensions of nanosized particles
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/10—Formation of a green body
- B22F10/14—Formation of a green body by jetting of binder onto a bed of metal powder
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
- B29C64/205—Means for applying layers
- B29C64/209—Heads; Nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
- B29C64/245—Platforms or substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
- B29C64/295—Heating elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/30—Auxiliary operations or equipment
- B29C64/307—Handling of material to be used in additive manufacturing
- B29C64/314—Preparation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/40—Structures for supporting 3D objects during manufacture and intended to be sacrificed after completion thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y40/00—Auxiliary operations or equipment, e.g. for material handling
- B33Y40/10—Pre-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
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- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
- B33Y70/10—Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
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- B33Y80/00—Products made by additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
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Abstract
Description
相変化材料は、本明細書で調製される導電性物品を、印刷された3D構造材料の上および/または内部に、支持および/または埋め込むための3D構造材料として使用され得る。相変化物質は、結晶質化合物および非晶質化合物を含み得る。結晶質化合物対非晶質化合物の重量比は、一般に、約60:40〜約95:5、約65:35〜約95:5、または約70:30〜約90:10である。一実施形態では、結晶質化合物と非晶質化合物の重量比は、それぞれ70:30である。別の実施形態では、結晶質化合物と非晶質化合物の重量比は、それぞれ80:20である。第1の構造材料中の結晶質化合物対非晶質化合物の重量比は、第2の構造材料の重量比と同一であっても異なっていてもよい。
非晶質構成成分を合成するために、コハク酸または酒石酸をABITOL E(商標)アルコール(Hercules,Inc.(Wilmington,DE)から入手可能)と反応させた。ABITOL Eは、代表的な構造によって示され、ヒドロアビエチルアルコール(CAS[13393−93−6])、水素化ロジンのメチルエステル(CAS[8050−15−5])、および脱カルボキシル化ロジン(CAS[8050−18−8])を含む。アビトールEは、マツ樹液、およびトウモロコシまたはモロコシから得られる生物ベースのコハク酸から誘導される樹脂である。
金属ナノ粒子インク組成物は、インクビヒクル、およびインクビヒクル中に分散される複数の金属ナノ粒子を含む。金属ナノ粒子は、金属ナノ粒子に結合される第1の有機安定化基および第2の有機安定化基の両方を含む。第1の有機安定化基のアルキル部分は、第2の有機安定化基のアルキル部分よりも長い炭素鎖長を有する。以下により詳細に議論されるように、
ドデシルアミン(444.55g)、デカリン(150mL)、およびメタノール(30mL)を、3つ口丸底反応フラスコに添加し、ドデシルアミンが溶解するまで混合物をよく攪拌しながら〜37℃まで加熱した。次いで、還元剤フェニルヒドラジン(32.70g)を、約5分間よく攪拌しながら溶液に添加した。酢酸銀(100g)を、35〜38℃の温度範囲で〜1.5から2.0時間かけて徐々に添加した。添加中に反応混合物の色が透明から暗褐色に変化し、銀ナノ粒子の形成を示した。添加後、反応混合物を40℃に加熱し、この温度で1時間撹拌した。
実施例1の銀ナノ粒子から新規銀ナノ粒子インク試料を調製した。インクは、ビシクロヘキサン(BCH):フェニルシクロヘキサン(重量で3:2)中に約50重量%の銀ナノ粒子を含有していた。以下の手順を使用してインクを作製した。茶色のガラス容器(120mL)中の50グラムの銀ナノ粒子粉末に、ビシクロヘキサン(30g)とフェニルシクロヘキサン(20g)の両方を添加した。得られた混合物を、オービタルミキサーを用いて約2時間穏やかに試料を振とうすることによって混合し、次いで22時間低速のロールミル上に配置した。この混合期間の後、得られた混合物を、1μmガラス繊維シリンジフィルターで濾過し、〜98gの導電性銀ナノ粒子インクを得た。
約50重量%の銀ナノ粒子を、ビシクロヘキサン(BCH)およびフェニルシクロヘキサンの代わりにデカリン:BCH(重量で3:2)中に分散させたことを除いて、実施例2Aのものと同様である第2の銀ナノ粒子インク試料を作製した。
オーバーヘッドスターラー、温度計、冷却器、およびArラインを備えた2Lの3つ口丸底フラスコに、溶融ドデシルアミン(444.77g、オーブン内50℃で一晩溶融)を添加した。反応フラスコを温水(35〜40℃)に浸漬した。MeOH(29.26mL)を添加し、続いてデカリン(149.78mL)を添加した。いくらかのデカリンを用いて、フェニルヒドラジン(26.17g)を磁気撹拌しながら添加して、移動を完了させた。混合物を完全に均一になるまで撹拌し、温度を35℃で安定化させた。温度を35〜40℃に維持しながら、酢酸銀粉末をフラスコの上部からゆっくり添加した。酢酸銀を120分かけて添加した。反応混合物を40℃でさらに1時間撹拌した。
磁気撹拌子、温度計、冷却器、およびArラインを備えた250mLの3つ口丸底フラスコに、オクチルアミン(31.01g)を添加した。フラスコを温水(35〜40℃)に浸漬した。MeOH(1.50mL)を添加し、続いてデカリン(7.49mL)を添加した。いくらかのデカリンを用いて、フェニルヒドラジン(1.31g)を撹拌しながら添加して、移動を完了させた。混合物を完全に均一になるまで撹拌し、温度を35℃で安定化させた。温度を40℃未満に維持しながら、ゆっくりと酢酸銀粉末を添加した。酢酸銀を添加すると溶液は褐色に変わった。酢酸銀を45分かけて加えた。反応混合物を40℃でさらに1時間撹拌した。
磁気撹拌子、温度計、冷却器、およびArラインを備えた100mLの3つ口丸底反応フラスコに、溶融ドデシルアミン(22.21g)およびオクチルアミン(79.21g)を添加した。反応フラスコを、温水(35〜40℃)に浸漬し、MeOH(7.5mL)を添加して、続いてデカリン(75mL)を添加した。次いで、いくらかのデカリンを用いて、フェニルヒドラジン(13.09g)を撹拌しながら添加して、移動を完了させた。混合物を完全に均一になるまで撹拌し、温度を35℃で安定化させた。温度を35〜40℃に維持しながら、酢酸銀(25g)粉末を反応フラスコの上部からゆっくり添加した。酢酸銀を50分かけて添加し、反応混合物を40℃でさらに1時間撹拌した。MeOH(187.5mL)を添加し、混合物を10分間撹拌した。反応生成物を、2枚の濾材(底部にWhatman 934AHガラス繊維紙、上部にWhatman#54濾紙)を備えたブフナー漏斗上で濾過した。濾過は約15分かかった。濾液は暗褐色であり、ウェット濾過ケーキは青色がかった灰色であった。ウェット濾過ケーキを30mlの茶色の瓶に入れ、アルゴンでフラッシュし、冷蔵庫に保管した。Malvern Nano ZetasizerおよびNano Sizerを用いて動的光散乱によってナノ粒子のZave粒径を評価した。結果を以下の表1に示す。ここで、D[1,0]は、粒子の数平均(すなわち、平均)サイズである。銀含有量(灰分)を、MLS PYRO高温マイクロ波灰分炉を用いて評価した。データを以下の表1に示す。
30:70のドデシルアミン対オクチルアミンの比を使用したことを除いて、実施例6と同様の手順を用いて銀ナノ粒子を合成した。
50:50のドデシルアミン対オクチルアミンの比を使用したことを除いて、実施例6と同様の手順を用いて銀ナノ粒子を合成した。
60:40のドデシルアミン対オクチルアミンの比を使用したことを除いて、実施例6と同様の手順を用いて銀ナノ粒子を合成した。
スケールを10倍にしたことを除いて、実施例9と同様の手順を用いて銀ナノ粒子を合成した。
US2010/0240758A1の実施例2に概説されているように調製された銀ナノ粒子(250.57g)を、風袋引きステンレス鋼ジャケットビーカーに添加した。ビシクロヘキサン(94.50g)を添加して、溶媒をスパチュラで撹拌した。ビーカーを26℃に設定した浴中にクランプで固定した。鋸歯状撹拌機をビーカー内に下げ、400RPMに設定した。窒素セプタム針をビーカー内で底から1cmのところまで下げた。混合物を10分間撹拌した後、撹拌を止めた。混合物中の銀粒子の大きな塊をスパチュラで砕いた。攪拌を合計4時間続けて、以下の特性を有する銀濃縮物を得た:灰分(60.55%)、Zave(19.4nm)、およびD[1,0]7.4nm。濃縮物を2つの250mLアンバーガラス瓶に分注し、アルゴンでパージした。瓶を白色のテープで密封して、冷蔵庫に保管した。
対照実施例11Aの銀ナノ粒子濃縮物(109.65g)を予め秤量した120mLのアンバー瓶に移し、再度秤量した。ビシクロヘキサン(10.16g)およびフェニルシクロヘキサン(30.01g)を添加した。混合物をアルゴンで覆い、3Mテープで密封し、ラベル付けしてMovil Rod上に一晩(約18時間)配置した。得られたインクを1μm Pall Acrodiscガラス繊維シリンジフィルターで濾過し、予め秤量したアンバーガラス瓶に移し、最終インクとしてラベル付けした。瓶をアルゴンでパージし、白色の3Mテープで密封して冷蔵庫に保存した。以下の表2は、インク配合および得られたインク特性を示す。
磁気撹拌子を備えた25mL丸底フラスコに実施例6の銀ナノ粒子(7.4g)を添加し、フラスコを水浴に浸漬し、氷を添加することによって温度を8℃に維持した。ビシクロヘキサン(2.0g)を添加し、長い針を用いてアルゴンを混合物中に深くパージした。混合物を8℃で1.5時間および23℃で6時間撹拌(700rpm)し、以下の特性を有する銀濃縮物を得た:灰分(69.38%)。濃縮物を30mLの茶色の瓶に移し、アルゴンでフラッシュし、冷蔵庫に保管した。
実施例12Aの銀ナノ粒子濃縮物(6.80g)を予め秤量した30mLのアンバー瓶に移し、再度秤量した。濃縮物にビシクロヘキサン(3.58g)およびフェニルシクロヘキサン(2.14g)を添加した。混合物をアルゴンで覆い、3Mテープで密封し、ラベル付けして2時間オービタルミキサー上に配置し、続いて22時間Movil Rod上で回転させた。得られたインクを1μm Pall Acrodiscガラス繊維シリンジフィルターを通して濾過し、予め秤量したアンバーガラス瓶に移し、最終インクとしてラベルを付けし、アルゴンでパージし、白色の3Mテープで密封し、冷蔵庫に保管した。以下の表2は、インク配合および得られたインク特性を示す。
実施例7の銀ナノ粒子を使用して、関連する銀濃縮物を作製したことを除いて、実施例12Aの手順と同様の手順に従った。以下の表2は、インク配合および得られたインク特性を示す。
実施例13Aの銀濃縮物を使用して、銀インクを作製したことを除いて、実施例12Bの手順と同様の手順に従った。以下の表2は、インク配合および得られたインク特性を示す。
実施例8の銀ナノ粒子を使用して、銀濃縮物を作製したことを除いて、実施例12Aの手順と同様の手順に従った。
実施例14Aの銀濃縮物を使用して、銀インクを作製したことを除いて、実施例12Bの手順と同様の手順に従った。以下の表2は、インク配合および得られたインク特性を示す。
実施例10の銀ナノ粒子を使用して、銀濃縮物を作製したことを除いて、実施例12Aの手順と同様の手順に従った。
実施例15Aの銀濃縮物を使用して、銀インクを作製したことを除いて、実施例12Bの手順と同様の手順に従った。以下の表2は、インク配合および得られたインク特性を示す。
相変化インクを、以下の表4に従ってインク構成成分を用いて調製した(相変化材料1〜4)。
着色剤が本明細書の相変化材料1に含まれなかったことを除いて、米国特許第7,381,254号の実施例IIに開示されている手順に従って相変化材料1を調製した。米国特許第7,381,254号の開示は、その全体が本明細書に組み込まれる。
相変化材料2を、米国特許第8,741,043号に開示されている手順に従って、テレフタル酸ジステアリルとTBCTをビーカー内で、130℃で約1時間撹拌しながら溶融混合することによって調製した。得られた混合物をアルミニウム皿に注ぎ入れ、室温に冷却した。
相変化材料3を、テレフタル酸ジステアリルとSylvatac RE 40(米国特許第9,120,943号に開示されている市販のロジンエステル)をビーカー内で、130℃で約1時間撹拌しながら溶融混合することによって調製した。得られた混合物をアルミニウム皿に注ぎ入れ、室温に冷却した。
着色剤が本明細書の相変化材料4に含まれなかったことを除いて、米国特許第8,741,043号の実施例Iに開示されている手順に従って相変化材料4を調製した。
UV硬化性オーバーコート材料を、少なくとも1種のオリゴマー、および少なくとも1種の2官能性または多官能性モノマー(3官能性以上のモノマー)を磁気撹拌棒を用いてガラス容器に添加することによって調製する。組成物をVario−Mag(登録商標)加熱撹拌ブロック上で約85℃で約20分間撹拌する。組成物を混合して、均質な液体混合物を形成した後、任意の追加の単官能モノマーおよび少なくとも1種の光開始剤を添加し、さらに約30分間混合して、最終混合UV硬化性組成物を得る。UV硬化性組成物を、1μm濾布(Parkerから入手可能)を通して濾過する。UV硬化性組成物を表5に示す。
図2は、実施例16で調製された相変化材料(すなわち、相変化材料1〜4)の3D構造上に完全に印刷されたアンテナが製作されることを示す。上記に開示された材料の相溶性およびそれらを使用して3D印刷物品を印刷する能力を実証すること。本開示の金属ナノ粒子インク組成物を、アンテナを製作するために使用する。図2は、3D構造を形成するために本明細書に記載されるプロセスを用いて、基部40を形成する第1の構造材料を示す。金属ナノ粒子インクを第1の構造材料上に吐出して、導電性トレース42を形成する。Dimatixインクジェットプリンタを用いてインクを吐出させる。導電性ラインを従来のオーブン内で、80℃で20分間アニールする。実施例17のUV硬化性オーバーコート材料を、導電性トレース42の上にコーティングする。オーバーコート実施例17を、5mmのランプと基板との間隙で、100%出力で500msの間LED硬化を用いて硬化させる。UV光をPhoseon FireJet FJ200 150−20(発光窓寸法[mm])395nm(波長)および8W/cm2(電力)によって供給する。次いで、硬化オーバーコート組成物17の上に第2の構造材料を吐出させて、トップコート46を形成し、それによって導電性トレース42を形成し、トップコート46と基部40との間に埋め込む。構造46を構造40と同じ手段で製作する。LED44は、導電性トレース42に接続されている。LEDが接続された3D印刷アンテナがワイヤレス発光体に接触する場合、LEDが点灯してアンテナが機能していることを示す。実施例18は、本明細書に開示されたプロセスが完全に印刷された電子回路を作製するために使用され得ることを示した。
実施例18の印刷された導電性アンテナを約90℃の温度で加熱する。図2の相変化構造材料40および46が溶けて自立型アンテナが残る。
Claims (20)
- 導電性物品を含む三次元(3D)物品の形成方法であって、
第1の3D構造材料を用意することと、
前記第1の3D構造材料の表面に、金属ナノ粒子インク組成物を堆積させることと、
前記金属ナノ粒子インク組成物を、60℃〜100℃の温度でアニールして、前記第1の3D構造材料上に前記導電性物品を形成することと、
任意に前記導電性物品上に第2の3D構造材料を形成することと、を含む、方法。 - 前記金属ナノ粒子インク組成物が、
インクビヒクルと、
前記インクビヒクル中に分散される複数の金属ナノ粒子と、を含み、前記金属ナノ粒子が、金属ナノ粒子に結合される2種以上の有機安定化基を含み、
第1の有機安定化基のアルキル部分が、第2の有機安定化基のアルキル部分よりも長い炭素鎖長を有し、前記第1の有機安定化基が、デシルアミン、ウンデシルアミン、ドデシルアミン、トリデシルアミン、テトラデシルアミン、およびこれらの混合物からなる群から選択され、前記第2の有機安定化基が、ブチルアミン、ペンチルアミン、ヘキシルアミン、ヘプチルアミン、オクチルアミン、ノニルアミン、デシルアミン、およびこれらの混合物からなる群から選択される、請求項1に記載の方法。 - 前記金属ナノ粒子が、TEMによって測定される場合、約0.5nm〜約100nmの範囲のサイズを有する、請求項2に記載の方法。
- 前記金属ナノ粒子が、Al、Ag、Au、Pt、Pd、Cu、Co、Cr、In、およびNiからなる群から選択される少なくとも1種の金属を含む、請求項2に記載の方法。
- 前記インクビヒクルが、第1の溶媒および第2の溶媒を含み、前記第1の溶媒が、無極性で、1気圧で160℃を超える沸点を有し、前記第2の溶媒が、1気圧で230℃を超える沸点を有し、前記第2の溶媒が、芳香族炭化水素であり、前記第1の溶媒より高い沸点を有する、請求項2に記載の方法。
- 前記第1の溶媒が、少なくとも1つの環式基を有する飽和または不飽和C10〜C20炭化水素であり、前記第2の溶媒が、C10〜C18アリールシクロアルカンである、請求項5に記載の方法。
- 前記第1の溶媒が、ビシクロヘキサン、デカリン、ナフタレン、およびこれらの組み合わせからなる群から選択される化合物であり、前記第2の溶媒が、フェニルシクロヘキサンである、請求項5に記載の方法。
- 前記第1の3D構造材料および前記任意の第2の3D構造材料が、
相変化材料を用意することと、
前記相変化材料を吐出温度に加熱することと、
前記相変化材料を互いの上に層状に吐出させることであって、後続の層を吐出する前に、各層を冷却および/または固化させる、吐出させることと、
前記冷却および/または固化層から、前記第1の3D構造材料および前記任意の第2の3D構造材料を形成することと、を含むプロセスによって形成される、請求項1に記載の方法。 - 前記相変化材料が、結晶質化合物および非晶質化合物を含む、請求項8に記載の方法。
- 前記結晶質化合物が、ジベンジルヘキサン−1,6−ジイルジカルバメート、テレフタル酸ジステアリル、ポリエチレンワックス、(L)−酒石酸ジ−フェニルエチル、これらの立体異性体、およびこれらの混合物からなる群から選択される、請求項8に記載の方法。
- 前記非晶質化合物が、水素化アビエチン酸のトリグリセリド、アビトールEコハク酸、アビトールE酒石酸、酒石酸ジメントール、酒石酸t−ブチルシクロヘキシル−シクロヘキシル、クエン酸トリメントール、およびこれらの混合物からなる群から選択される、請求項8に記載の方法。
- 前記吐出層を冷却および/または固化させるのに、約1〜約10秒かかる、請求項8に記載の方法。
- 前記相変化材料が、約30℃の温度で約104cps〜約106cpsの粘度を有する、請求項8に記載の方法。
- 前記相変化材料の前記粘度が、前記アニール工程の後に変化しない、請求項8に記載の方法。
- 前記第1の3D構造材料および/または前記任意の第2の3D構造材料を溶融し、それによって自立型導電性物品を形成することをさらに含む、請求項1に記載の方法。
- 埋め込まれた導電性物品を含む三次元(3D)物品の形成方法であって、
第1の3D構造材料を用意することと、
前記第1の3D構造材料の表面に、導電性金属インク組成物を堆積させることと、
前記導電性金属インク組成物を60℃〜100℃の温度でアニールして、前記第1の3D構造材料上に前記導電性物品を形成することと、
前記導電性物品上に第2の3D構造材料を形成し、それによって前記導電性物品をその中に埋め込むことと、を含む、方法。 - 前記金属ナノ粒子インク組成物が、
インクビヒクルと、
前記インクビヒクル中に分散される複数の金属ナノ粒子と、を含み、前記金属ナノ粒子が、金属ナノ粒子に結合される第1の有機安定化基および第2の有機安定化基の両方を含み、前記第1の有機安定化基のアルキル部分が、前記第2の有機安定化基のアルキル部分よりも長い炭素鎖長を有し、前記第1の有機安定化基が、デシルアミン、ウンデシルアミン、ドデシルアミン、トリデシルアミン、テトラデシルアミン、およびこれらの混合物からなる群から選択され、前記第2の有機安定化基が、ブチルアミン、ペンチルアミン、ヘキシルアミン、ヘプチルアミン、オクチルアミン、ノニルアミン、デシルアミン、およびこれらの混合物からなる群から選択される、請求項16に記載の方法。 - 前記第1の3D構造材料および前記第2の3D構造材料の両方が、相変化材料を含み、前記相変化材料が、結晶質化合物および非晶質化合物を含む、請求項16に記載の方法。
- 自立型導電性物品の形成方法であって、
第1の3D構造材料を用意する工程と、
前記第1の3D構造材料の表面に、導電性金属インク組成物を堆積させる工程と、
前記導電性金属インク組成物を60℃〜100℃の温度でアニールして、第1の3D造形材料上に前記導電性物品を形成する工程と、
前記第1の3D構造材料を溶融し、それによって自立型導電性物品を形成する工程と、を含む、方法。 - 前記金属ナノ粒子インク組成物が、
インクビヒクルと、
前記インクビヒクル中に分散される複数の金属ナノ粒子と、を含み、前記金属ナノ粒子が、金属ナノ粒子に結合される2種以上の有機安定化基を含み、前記2種以上の有機安定化基が、ブチルアミン、ペンチルアミン、ヘキシルアミン、ヘプチルアミン、オクチルアミン、ノニルアミン、デシルアミン、ウンデシルアミン、ドデシルアミン、トリデシルアミン、テトラデシルアミン、ヘキサデシルアミン、ジアミノペンタン、ジアミノヘキサン、ジアミノヘプタン、ジアミノオクタン、ジアミノノナン、ジアミノデカン、ジアミノオクタン、ジプロピルアミン、ジブチルアミン、ジペンチルアミン、ジヘキシルアミン、ジヘプチルアミン、ジオクチルアミン、ジノニルアミン、ジデシルアミン、メチルプロピルアミン、エチルプロピルアミン、プロピルブチルアミン、エチルブチルアミン、エチルペンチルアミン、プロピルペンチルアミン、ブチルペンチルアミン、トリブチルアミン、およびトリヘキシルアミンからなる群から選択される、請求項19に記載の方法。
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