JP2020008827A - 光学素子およびその製造方法 - Google Patents
光学素子およびその製造方法 Download PDFInfo
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- JP2020008827A JP2020008827A JP2018216555A JP2018216555A JP2020008827A JP 2020008827 A JP2020008827 A JP 2020008827A JP 2018216555 A JP2018216555 A JP 2018216555A JP 2018216555 A JP2018216555 A JP 2018216555A JP 2020008827 A JP2020008827 A JP 2020008827A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000012044 organic layer Substances 0.000 claims abstract description 225
- 229910052751 metal Inorganic materials 0.000 claims abstract description 142
- 239000002184 metal Substances 0.000 claims abstract description 142
- 238000000034 method Methods 0.000 claims abstract description 116
- 238000005530 etching Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims description 79
- 239000007789 gas Substances 0.000 claims description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 125000001188 haloalkyl group Chemical group 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000007598 dipping method Methods 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/06—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain multicolour or other optical effects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/107—Post-treatment of applied coatings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/52—Two layers
- B05D7/54—No clear coat specified
- B05D7/548—No curing step for the last layer
- B05D7/5483—No curing step for any layer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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- Crystallography & Structural Chemistry (AREA)
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- Drying Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
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- Electroluminescent Light Sources (AREA)
Abstract
Description
12…基板
14…金属グリッド
16…酸化物層
18…有機層
19…マスク層
20…隙間
21…第1のエッチングプロセス
22…バッファ層
23…第2のエッチングプロセス
28…隙間
X…有機層の幅
W…金属グリッドの幅
H…金属グリッドの高さ
H1…隙間の高さ
W1…隙間の幅
S1…金属グリッドの側壁
S2…有機層の側壁
H1’…バッファ層の高さ
W1’…バッファ層の幅
14’…金属グリッドの上面
22’…有機層の上面
Claims (10)
- 基板を提供するステップと、
前記基板の上に側壁を有する複数の金属グリッドを形成するステップと、
前記複数の金属グリッドの間の前記基板の上に第1の有機層を形成するステップと、
前記第1の有機層および前記複数の金属グリッドの上に第2の有機層を形成するステップと、
前記第2の有機層および前記第1の有機層をエッチングし、前記複数の金属グリッドおよび前記複数の金属グリッドの上の複数のパターン化された第2の有機層を残すステップを含む光学素子の製造方法。 - 前記第2の有機層は、ハロアルキルガスをエッチングガスとして用いた第1のエッチングプロセスによりエッチングされる請求項1に記載の光学素子の製造方法。
- 前記第1の有機層は、酸素、二酸化炭素、または窒素をエッチングガスとして用いた第2のエッチングプロセスによりエッチングされる請求項1に記載の光学素子の製造方法。
- 前記第2のエッチングプロセス後、前記第1の有機層の一部は、前記複数の金属グリッドの側壁に残り、溶剤に浸漬させて除去されるか、或いは酸素、二酸化炭素、または窒素をエッチングガスとして用いた第3のエッチングプロセスにより除去される請求項3に記載の光学素子の製造方法。
- 前記第2の有機層および前記第1の有機層は、ハロアルキルガスをエッチングガスとして用いた第4のエッチングプロセスによりエッチングされ、前記複数の金属グリッドの間に前記第1の有機層の一部を残し、かつ前記複数の金属グリッドの間の前記第1の有機層は、溶剤に浸漬させて除去される請求項1に記載の光学素子の製造方法。
- 前記第2の有機層が形成される前に前記第1の有機層をパターン化するステップを更に含む請求項1に記載の光学素子の製造方法。
- 前記複数の金属グリッドの間と前記複数のパターン化された第2の有機層の間の前記基板の上にカラーフィルタを形成するステップを更に含む請求項1に記載の光学素子の製造方法。
- 基板と、
前記基板の上に形成された、幅、高さ、および側壁を有する複数の金属グリッドと、
前記複数の金属グリッドの間の前記基板の上に形成された酸化物層と、
前記複数の金属グリッドの上に形成された、幅と側壁を有する複数の有機層を含み、前記有機層の幅は、前記金属グリッドの幅より大きく、前記有機層と前記酸化物層との間には高さと幅を有する隙間が存在する光学素子。 - 前記有機層は、約1.2〜約1.45の範囲の屈折率を有し、前記隙間の高さは、前記有機層と前記酸化物層との間の距離として定義され、前記隙間の高さは、ゼロより大きく、前記金属グリッドの高さ以下であり、前記隙間の幅は、前記金属グリッドの側壁と前記有機層の側壁との間の距離として定義され、前記隙間の幅は、ゼロより大きく、前記有機層の幅と前記金属グリッドの幅との間の差以下である請求項8に記載の光学素子。
- 前記隙間に充填されたバッファ層を更に含み、前記バッファ層は約1.4〜約1.55の範囲の屈折率を有する請求項8に記載の光学素子。
Applications Claiming Priority (2)
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US16/031,277 US10675657B2 (en) | 2018-07-10 | 2018-07-10 | Optical elements and method for fabricating the same |
US16/031,277 | 2018-07-10 |
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JP2020008827A true JP2020008827A (ja) | 2020-01-16 |
JP6684888B2 JP6684888B2 (ja) | 2020-04-22 |
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US (2) | US10675657B2 (ja) |
JP (1) | JP6684888B2 (ja) |
CN (1) | CN110703383B (ja) |
TW (1) | TWI712827B (ja) |
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US6946238B2 (en) * | 2001-06-29 | 2005-09-20 | 3M Innovative Properties Company | Process for fabrication of optical waveguides |
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JP6684888B2 (ja) | 2020-04-22 |
TWI712827B (zh) | 2020-12-11 |
US20200016628A1 (en) | 2020-01-16 |
US20200254485A1 (en) | 2020-08-13 |
CN110703383B (zh) | 2021-03-02 |
US10675657B2 (en) | 2020-06-09 |
CN110703383A (zh) | 2020-01-17 |
US11590531B2 (en) | 2023-02-28 |
TW202006409A (zh) | 2020-02-01 |
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