JP2020002464A - 基板における粒子低減用のパルスレーザ蒸着及び基板表面を有する基板用の装置 - Google Patents
基板における粒子低減用のパルスレーザ蒸着及び基板表面を有する基板用の装置 Download PDFInfo
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- JP2020002464A JP2020002464A JP2019112906A JP2019112906A JP2020002464A JP 2020002464 A JP2020002464 A JP 2020002464A JP 2019112906 A JP2019112906 A JP 2019112906A JP 2019112906 A JP2019112906 A JP 2019112906A JP 2020002464 A JP2020002464 A JP 2020002464A
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 238000007740 vapor deposition Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 title description 46
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 30
- 239000013077 target material Substances 0.000 claims abstract description 8
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/121—Coherent waves, e.g. laser beams
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- Chemical Kinetics & Catalysis (AREA)
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- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
−基板を保持する基板ホルダと、
−基板の基板表面に面して配列されたターゲットと、
−基板とターゲットとの間に配列され、少なくとも一つのフィルター通路開口を有する回転本体を含む速度フィルターと、そして、
−ターゲット材のプラズマプルームを生成するため、目標点でターゲットに向けられたパルスレーザと、ここで目標点でのターゲットの表面は基板表面に面している、
を含んでいる。
7…フィルター通路開口、8…プラズマホールプレート、9…プラズマ通路開口、
10…プラズマプルーム。
Claims (8)
- パルスレーザ蒸着及び基板表面を有する基板用の装置であって、
−基板を保持する基板ホルダと、
−基板の基板表面に面して配列されたターゲットと、
−基板とターゲットとの間に配列された速度フィルターで、少なくとも一つのフィルター通路開口を有する回転本体を含む速度フィルターと、
−ターゲット材のプラズマプルームを生成するためにターゲットの目標点に向けられたパルスレーザと、ここで目標点でのターゲットの表面は基板表面に面している、
−ターゲットと基板との間に配列されたプラズマホールプレートと、
を備え、
プラズマホールプレートは、プラズマ通路開口を有し、該プラズマ通路開口は、速度フィルターの回転方向に垂直である分割平面によって上流セクション及び下流セクションに分割され、ここで目標点は分割平面と一致し、上流セクションの表面積は、パルスレーザによるプラズマプルームの少なくとも生成の時点で下流セクションの表面積よりも大きい、
装置。 - 速度フィルターの回転方向におけるプラズマ通路開口の上流セクションの長さは、速度フィルターの回転方向におけるプラズマ通路開口の下流セクションの長さよりも大きい、請求項1に記載の装置。
- プラズマホールプレートは、速度フィルターと基板との間に配列されている、請求項1又は2に記載の装置。
- 使用状態において、生成されたプラズマプルームの一部は、分割平面の下流セクション側においてプラズマホールプレートによって遮断される、請求項1から3のいずれか一つに記載の装置。
- 使用状態において、生成されたプラズマプルームの大部分は、分割平面の上流セクション側よりも分割平面の下流セクション側において遮断される、請求項4に記載の装置。
- プラズマホールプレートは、速度フィルターの回転方向と比較して反対方向に回転する、請求項1から5のいずれか一つに記載の装置。
- 目標点でのターゲット表面は、基板表面と平行である、請求項1から6のいずれか一つに記載の装置。
- プラズマ通路開口は、プラズマホールプレートの半径方向に対して非対称的に形作られている、請求項1から7のいずれか一つに記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18180369.3A EP3587620A1 (en) | 2018-06-28 | 2018-06-28 | Device for pulsed laser deposition and a substrate with a substrate surface for reduction of particles on the substrate |
EP18180369.3 | 2018-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020002464A true JP2020002464A (ja) | 2020-01-09 |
JP7506461B2 JP7506461B2 (ja) | 2024-06-26 |
Family
ID=62837604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019112906A Active JP7506461B2 (ja) | 2018-06-28 | 2019-06-18 | 基板における粒子低減用のパルスレーザ蒸着及び基板表面を有する基板用の装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11655535B2 (ja) |
EP (1) | EP3587620A1 (ja) |
JP (1) | JP7506461B2 (ja) |
KR (1) | KR20200001989A (ja) |
CN (1) | CN110656312A (ja) |
TW (1) | TWI841569B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3868916B1 (en) * | 2020-02-19 | 2022-05-18 | Solmates B.V. | Filter for a plasma plume |
EP3919650A1 (en) | 2020-06-04 | 2021-12-08 | Solmates B.V. | Device for pulsed laser deposition |
EP3964605A1 (en) | 2020-09-03 | 2022-03-09 | Solmates B.V. | Device for pulsed laser deposition |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0406871B1 (en) | 1989-07-06 | 1996-09-25 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Laser deposition method and apparatus |
US5411772A (en) * | 1994-01-25 | 1995-05-02 | Rockwell International Corporation | Method of laser ablation for uniform thin film deposition |
JP2001192811A (ja) * | 2000-01-17 | 2001-07-17 | Canon Inc | 成膜方法および成膜装置 |
US6805916B2 (en) | 2001-01-17 | 2004-10-19 | Research Foundation Of The City University Of New York | Method for making films utilizing a pulsed laser for ion injection and deposition |
EP2137336B1 (en) * | 2007-02-23 | 2014-04-02 | Picodeon Ltd Oy | Method for photon ablation of a target and coating method |
EP2243855B1 (en) * | 2009-04-22 | 2021-03-03 | Solmates B.V. | Pulsed laser deposition with exchangeable shadow masks |
FI20096012A0 (fi) * | 2009-10-02 | 2009-10-02 | Picodeon Ltd Oy | Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi |
EP2410074B1 (en) | 2010-07-21 | 2013-12-11 | Solmates B.V. | Heat shield and filter |
US20130340680A1 (en) | 2011-03-11 | 2013-12-26 | Sharp Kabushiki Kaisha | Vapor deposition particle projection device and vapor deposition device |
EP2722412B1 (en) | 2012-10-17 | 2018-04-25 | Solmates B.V. | Method for depositing a target material onto a sensitive material |
FI126769B (en) * | 2014-12-23 | 2017-05-15 | Picodeon Ltd Oy | Lighthouse type scanner with a rotating mirror and a circular target |
-
2018
- 2018-06-28 EP EP18180369.3A patent/EP3587620A1/en active Pending
-
2019
- 2019-06-14 TW TW108120581A patent/TWI841569B/zh active
- 2019-06-18 JP JP2019112906A patent/JP7506461B2/ja active Active
- 2019-06-25 KR KR1020190075512A patent/KR20200001989A/ko not_active Application Discontinuation
- 2019-06-25 US US16/451,282 patent/US11655535B2/en active Active
- 2019-06-28 CN CN201910570727.6A patent/CN110656312A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20200001989A (ko) | 2020-01-07 |
TWI841569B (zh) | 2024-05-11 |
TW202012664A (zh) | 2020-04-01 |
US20200002805A1 (en) | 2020-01-02 |
EP3587620A1 (en) | 2020-01-01 |
JP7506461B2 (ja) | 2024-06-26 |
CN110656312A (zh) | 2020-01-07 |
US11655535B2 (en) | 2023-05-23 |
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