FI20096012A0 - Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi - Google Patents

Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi

Info

Publication number
FI20096012A0
FI20096012A0 FI20096012A FI20096012A FI20096012A0 FI 20096012 A0 FI20096012 A0 FI 20096012A0 FI 20096012 A FI20096012 A FI 20096012A FI 20096012 A FI20096012 A FI 20096012A FI 20096012 A0 FI20096012 A0 FI 20096012A0
Authority
FI
Finland
Prior art keywords
arrangement
crystalline structures
producing crystalline
producing
structures
Prior art date
Application number
FI20096012A
Other languages
English (en)
Swedish (sv)
Inventor
Reijo Lappalainen
Vesa Myllymaeki
Jukka Haeyrynen
Original Assignee
Picodeon Ltd Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picodeon Ltd Oy filed Critical Picodeon Ltd Oy
Priority to FI20096012A priority Critical patent/FI20096012A0/fi
Publication of FI20096012A0 publication Critical patent/FI20096012A0/fi
Priority to JP2012531465A priority patent/JP2013506757A/ja
Priority to EP10773934A priority patent/EP2483439A2/en
Priority to US13/499,530 priority patent/US20120244032A1/en
Priority to PCT/FI2010/050771 priority patent/WO2011039424A2/en
Priority to KR1020127011476A priority patent/KR20120095891A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/04—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by physical dissolution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
FI20096012A 2009-10-02 2009-10-02 Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi FI20096012A0 (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20096012A FI20096012A0 (fi) 2009-10-02 2009-10-02 Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi
JP2012531465A JP2013506757A (ja) 2009-10-02 2010-10-04 結晶構造を作るための方法および構成
EP10773934A EP2483439A2 (en) 2009-10-02 2010-10-04 Method and apparatus for laser ablation
US13/499,530 US20120244032A1 (en) 2009-10-02 2010-10-04 Method and apparatus for laser ablation
PCT/FI2010/050771 WO2011039424A2 (en) 2009-10-02 2010-10-04 A method and arrangement for producing crystalline structures
KR1020127011476A KR20120095891A (ko) 2009-10-02 2010-10-04 레이저 삭마 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20096012A FI20096012A0 (fi) 2009-10-02 2009-10-02 Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi

Publications (1)

Publication Number Publication Date
FI20096012A0 true FI20096012A0 (fi) 2009-10-02

Family

ID=41263430

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20096012A FI20096012A0 (fi) 2009-10-02 2009-10-02 Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi

Country Status (6)

Country Link
US (1) US20120244032A1 (fi)
EP (1) EP2483439A2 (fi)
JP (1) JP2013506757A (fi)
KR (1) KR20120095891A (fi)
FI (1) FI20096012A0 (fi)
WO (1) WO2011039424A2 (fi)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9790090B2 (en) * 2013-02-13 2017-10-17 Lawrence Livermore National Security, Llc Laser-induced gas plasma machining
JP6104126B2 (ja) * 2013-10-22 2017-03-29 三井造船株式会社 皮膜形成装置及び皮膜形成方法
US20150187558A1 (en) * 2013-12-27 2015-07-02 Imra America, Inc. Pulse-burst assisted electrospray ionization mass spectrometer
CA3015805A1 (en) * 2017-08-28 2019-02-28 Institut National De La Recherche Scientifique Method and system for fabrication of crystals using laser-accelerated particle beams or secondary sources
US10676814B2 (en) * 2017-09-28 2020-06-09 The United States Of America As Represented By The Secretary Of The Navy System and method for controlling the elemental composition of films produced by pulsed laser deposition
US20200001423A1 (en) * 2018-06-27 2020-01-02 Edmund Optics, Inc. Power polishing apparatuses and methods for in-situ finishing and coating of optical component
EP3587620A1 (en) * 2018-06-28 2020-01-01 Solmates B.V. Device for pulsed laser deposition and a substrate with a substrate surface for reduction of particles on the substrate
JP7174996B2 (ja) * 2018-11-02 2022-11-18 国立大学法人東海国立大学機構 パルスレーザーを用いた成膜方法及び成膜装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090246413A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method for fabricating thin films

Also Published As

Publication number Publication date
WO2011039424A3 (en) 2011-09-15
JP2013506757A (ja) 2013-02-28
WO2011039424A2 (en) 2011-04-07
KR20120095891A (ko) 2012-08-29
EP2483439A2 (en) 2012-08-08
US20120244032A1 (en) 2012-09-27
WO2011039424A4 (en) 2011-11-10

Similar Documents

Publication Publication Date Title
LTC2447254I2 (lt) Kristalai
BR112012004707A2 (pt) método
BR112012000624A2 (pt) método
FI20090389A0 (fi) Menetelmä
IT1395537B1 (it) Metodo di monitoraggio
BRPI0917129A2 (pt) método de fabricação de fralda
BRPI0916499A2 (pt) método de produção de biomassa
BRPI1012526A2 (pt) método
BRPI1010705A2 (pt) método
FI20086095A0 (fi) Kiteiset pintarakenteet ja menetelmät niiden valmistamiseksi
BRPI0922490A2 (pt) Método para produção de beta-santaleno
FI20096012A0 (fi) Menetelmä ja järjestely kiteisten rakenteiden tuottamiseksi
BRPI1015444A2 (pt) método para produzir (+)-zizaeno
BRPI1012532A2 (pt) método
BR112012010615A2 (pt) estrutura de colméia e método para formar uma estrutura de colméia
BRPI1009350A2 (pt) método
FI20106181A0 (fi) Menetelmä substraatin muodostamiseksi ja substraatti
FI20095039A0 (fi) Menetelmä ja järjestely kellosignaalin säätämiseksi
BRPI1010841A2 (pt) método para a fabricação de fluoroalquilnitrilas
BRPI0923370A2 (pt) Método para produção de titanossilicato
FI20090201A0 (fi) Menetelmä suolapölyn tuottamiseksi ja suolageneraattori
BR112012001917A2 (pt) Método para produzir ácido láctico
FI20090137A0 (fi) Seulontamenetelmä
FI20095850A0 (fi) Rakennelma ja menetelmä rakennelman valmistamiseksi, sekä rakennelman käyttö
NO20080762L (no) Fremgangsmate og arrangement for fremstilling av langstrakte elementer

Legal Events

Date Code Title Description
FD Application lapsed