JP2019534939A5 - - Google Patents

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Publication number
JP2019534939A5
JP2019534939A5 JP2019510937A JP2019510937A JP2019534939A5 JP 2019534939 A5 JP2019534939 A5 JP 2019534939A5 JP 2019510937 A JP2019510937 A JP 2019510937A JP 2019510937 A JP2019510937 A JP 2019510937A JP 2019534939 A5 JP2019534939 A5 JP 2019534939A5
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JP
Japan
Prior art keywords
group
transition metal
containing film
azatoran
precursor
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JP2019510937A
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English (en)
Japanese (ja)
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JP6941670B2 (ja
JP2019534939A (ja
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Priority claimed from PCT/US2017/026817 external-priority patent/WO2018048481A1/en
Publication of JP2019534939A publication Critical patent/JP2019534939A/ja
Publication of JP2019534939A5 publication Critical patent/JP2019534939A5/ja
Application granted granted Critical
Publication of JP6941670B2 publication Critical patent/JP6941670B2/ja
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JP2019510937A 2016-09-09 2017-04-10 4族遷移金属含有膜の気相成長のための4族遷移金属含有膜形成用組成物 Active JP6941670B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662385689P 2016-09-09 2016-09-09
US62/385,689 2016-09-09
PCT/US2017/026817 WO2018048481A1 (en) 2016-09-09 2017-04-10 Group 4 transition metal-containing film forming compositions for vapor deposition of group 4 transition metal-containing films

Publications (3)

Publication Number Publication Date
JP2019534939A JP2019534939A (ja) 2019-12-05
JP2019534939A5 true JP2019534939A5 (enExample) 2020-05-14
JP6941670B2 JP6941670B2 (ja) 2021-09-29

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ID=61562782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019510937A Active JP6941670B2 (ja) 2016-09-09 2017-04-10 4族遷移金属含有膜の気相成長のための4族遷移金属含有膜形成用組成物

Country Status (4)

Country Link
US (2) US11008351B2 (enExample)
JP (1) JP6941670B2 (enExample)
KR (1) KR102398823B1 (enExample)
WO (1) WO2018048481A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118388554B (zh) * 2024-06-27 2024-11-19 江苏南大光电材料股份有限公司 Ivb族金属化合物、制备方法及应用
CN118388553B (zh) * 2024-06-27 2024-10-18 江苏南大光电材料股份有限公司 多胺配体基ivb族金属化合物、制备方法及应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344948A (en) * 1992-02-25 1994-09-06 Iowa State University Research Foundation, Inc. Single-source molecular organic chemical vapor deposition agents and use
WO2003024451A1 (de) * 2001-09-08 2003-03-27 Boehringer Ingelheim Pharma Gmbh & Co. Kg 2-(2-phenylethyl)-benzimidazol-5-carboxamid- derivative und ihre verwendung als tryptase_ inhibitoren
US7098150B2 (en) * 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
KR20080101040A (ko) * 2007-05-15 2008-11-21 주식회사 유피케미칼 금속 박막 또는 세라믹 박막 증착용 유기 금속 전구체화합물 및 이를 이용한 박막 증착 방법
US8900422B2 (en) * 2008-04-23 2014-12-02 Intermolecular, Inc. Yttrium and titanium high-K dielectric film
US9373500B2 (en) * 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
DK2603534T3 (en) * 2010-08-13 2015-10-12 Total Res & Technology Feluy MODIFIED CATALYST CARRIER
WO2013109401A1 (en) * 2012-01-19 2013-07-25 Christian Dussarrat Silicon containing compounds for ald deposition of metal silicate films
US9187511B2 (en) * 2012-05-01 2015-11-17 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules
KR102093226B1 (ko) * 2013-05-20 2020-03-25 (주)디엔에프 규소함유 유기 금속 전구체 화합물, 이의 제조방법 및 이를 이용한 금속-규소 산화물 박막의 제조 방법
US9067958B2 (en) * 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
CN106574009B (zh) * 2014-06-12 2019-06-28 道达尔研究技术弗吕公司 用于在至少一个连续搅拌釜反应器中制备聚乙烯的工艺
US9663547B2 (en) * 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US9790591B2 (en) * 2015-11-30 2017-10-17 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
US20170044664A1 (en) * 2016-10-28 2017-02-16 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10106568B2 (en) * 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10584039B2 (en) * 2017-11-30 2020-03-10 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films

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