JP2019532505A - 積層量子デバイス内の損失の低減 - Google Patents
積層量子デバイス内の損失の低減 Download PDFInfo
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- JP2019532505A JP2019532505A JP2019513972A JP2019513972A JP2019532505A JP 2019532505 A JP2019532505 A JP 2019532505A JP 2019513972 A JP2019513972 A JP 2019513972A JP 2019513972 A JP2019513972 A JP 2019513972A JP 2019532505 A JP2019532505 A JP 2019532505A
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- 230000009467 reduction Effects 0.000 title description 2
- 239000010410 layer Substances 0.000 claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000002887 superconductor Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000002356 single layer Substances 0.000 claims abstract description 25
- 239000002096 quantum dot Substances 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 8
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
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- 230000008569 process Effects 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005233 quantum mechanics related processes and functions Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Classifications
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Abstract
Description
101 第1の表面
102 第1のチップ
103 第2の表面
104 第2のチップ
105 第1の層
106 バンプボンド
107 第2の層
108 基板
109 コネクタ
110 相互接続パッド
111 誘電体
112 ワイヤボンドパッド
113 超伝導体材料
120 距離
202 コプレーナ導波路共振器
202a センターライン
204 伝送ライン
206 ワイヤボンドパッド
208 グランドプレーン
301 グランドプレーン
302 コプレーナ伝送ライン
302a センターライン
304 誘電体クロスオーバー
306 コプレーナ導波路共振器
307 層
308 平行板キャパシタ
310 ハイブリッド接合伝送ライン
Claims (27)
- キュービットを含む第1のチップと、
前記第1のチップに結合されている第2のチップであって、前記第2のチップが、互いの反対側を向いた第1および第2の表面を有する基板を含み、前記第1の表面が前記第1のチップに面している、第2のチップと
を備えるデバイスであって、前記第2のチップが、
前記基板の前記第1の表面の上の超伝導体材料の単一の層であって、第1の回路素子を含む、超伝導体材料の単一の層と、
前記基板の前記第2の表面の上の第2の層であって、第2の回路素子を含む、第2の層と、
前記基板の前記第1の表面から前記基板の前記第2の表面へ延在し、前記超伝導体材料の単一の層の一部分を前記第2の回路素子に電気的に接続している、コネクタと
を備える、デバイス。 - 前記デバイスは、前記第1のチップと前記第2のチップの前記第1の層との間にバンプボンドを備え、前記バンプボンドが前記第1のチップの前記キュービットと前記第1の回路素子との間のデータを連結するように配置されている、請求項1に記載のデバイス。
- 前記バンプボンドがインジウムを含む、請求項2に記載のデバイス。
- 前記基板の前記第1の表面と直接接触しているか、または、前記第1のチップに面する前記超伝導体材料の単一の層の表面と直接接触している、固体誘電材料が存在しない、請求項1に記載のデバイス。
- 前記第1の回路素子が共振器を含む、請求項1に記載のデバイス。
- 前記超伝導体材料の単一の層がワイヤボンドパッドを含む、請求項1に記載のデバイス。
- 前記超伝導体材料の単一の層が伝送ラインを含み、前記ワイヤボンドパッドが前記伝送ラインに電気的に接続されており、前記伝送ラインが前記第1の回路素子に電磁気的に連結するかまたは電気的に連結するように配置されている、請求項6に記載のデバイス。
- 前記コネクタが前記基板の開口部を通って延在している、請求項1に記載のデバイス。
- 前記第2の層が誘電体膜を含む、請求項1に記載のデバイス。
- 前記誘電体膜がシリコンを含む、請求項9に記載のデバイス。
- 前記第2の層がワイヤリングおよび誘電体膜の複数の層を含む、請求項1に記載のデバイス。
- 前記第2の回路素子が、平行板キャパシタ、クロスオーバーワイヤリング、増幅器、共振器、超伝導体材料の複数の層を含むワイヤリング、または、ジョセフソン論理回路を含む、請求項1に記載のデバイス。
- 前記超伝導体材料の単一の層が、前記バンプボンドを介して前記第1のチップのキュービットに動作可能に連結された測定読み出し共振器を含む、請求項1に記載のデバイス。
- 前記基板が単結晶シリコンを含む、請求項1に記載のデバイス。
- 前記基板がおおよそ100ミクロンからおおよそ1000ミクロンの間の厚さを有する、請求項1に記載のデバイス。
- 前記コネクタがタングステンまたは銅を含む、請求項1に記載のデバイス。
- 前記コネクタが超伝導体を含む、請求項1に記載のデバイス。
- 前記超伝導体材料の単一の層と前記第1のチップとの間の前記バンプボンドの厚さがおおよそ1ミクロンからおおよそ10ミクロンの間にある、請求項1に記載のデバイス。
- 前記超伝導体材料の単一の層がアルミニウムまたはニオブを含む、請求項1に記載のデバイス。
- キュービットを含む第1のチップを提供するステップと、
基板と、前記基板の第1の側に第1の回路素子を形成する超伝導体材料の単一の層と、前記基板の前記第1の側の反対側にある第2の側上の第2の回路素子とを備える第2のチップを提供するステップであって、前記第2の回路素子が前記超伝導体材料の単一の層の一部分に電気的に連結されている、ステップと、
前記第2のチップの前記超伝導体材料の層が前記第1のチップに面するように、前記第1のチップを前記第2のチップに接合するステップと
を含む、方法。 - 前記第1のチップを前記第2のチップに接合するステップが、前記第1のチップと前記第2のチップとの間にバンプボンドを形成するステップを含む、請求項20に記載の方法。
- 前記バンプボンドが前記キュービットと前記第1の回路素子との間のデータを連結するように構成されている、請求項21に記載の方法。
- 量子回路素子を含む第1のチップと、
前記第1のチップに結合されている第2のチップと
を備えるデバイスであって、前記第2のチップが、
第1の側上に単一の第1の超伝導体層を含む基板であって、前記単一の第1の超伝導体層が前記第1のチップに接合されている、基板と、
前記基板の異なる第2の側上に第2の超伝導体層と
を含む、デバイス。 - 前記第2のチップがコネクタをさらに含み、前記コネクタが前記基板の前記第1の側から前記基板の前記第2の側へ延在しかつ前記単一の第1の超伝導体層の一部分を前記第2の超伝導体層に接続している、請求項23に記載のデバイス。
- 前記単一の第1の超伝導体層が前記基板の前記第1の側と直接接触している、請求項23に記載のデバイス。
- 前記単一の第1の超伝導体層の上部表面と前記第1のチップとの間にギャップが延在している、請求項25に記載のデバイス。
- 前記第2のチップが前記基板の前記第2の側上に誘電体層をさらに含む、請求項23に記載のデバイス。
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