JP2019517941A - ギャップ付き金属層を備える終端リング - Google Patents
ギャップ付き金属層を備える終端リング Download PDFInfo
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- JP2019517941A JP2019517941A JP2018565700A JP2018565700A JP2019517941A JP 2019517941 A JP2019517941 A JP 2019517941A JP 2018565700 A JP2018565700 A JP 2018565700A JP 2018565700 A JP2018565700 A JP 2018565700A JP 2019517941 A JP2019517941 A JP 2019517941A
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- metal layer
- fluid ejection
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 112
- 239000002184 metal Substances 0.000 title claims abstract description 112
- 239000012530 fluid Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 239000002775 capsule Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 120
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 208000013201 Stress fracture Diseases 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002032 lab-on-a-chip Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
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- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
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Abstract
Description
流体吐出デバイスは、少量の流体を表面上に正確に吐出することを可能にする。流体吐出デバイスは様々なシステムで使用される。例えば、積層造形装置において、流体吐出デバイスは融剤を供給することができる。別の例において、流体吐出デバイスは、用紙のような印刷媒体上にインクを供給するために使用されるプリントヘッドであることができる。流体の小滴は、噴射チャンバ内に短い高圧パルスを生成することにより、ノズルオリフィスから外へ吐出される。噴射チャンバ内の吐出器は、流体を強制的にノズルオリフィスの外に出す。ノズルの例は、熱吐出器または圧電吐出器を含む。特に、熱吐出器は、他の集積回路と共に、噴射チャンバ内に加熱要素(例えば、抵抗器)を含む半導体デバイスを使用する。流体の小滴を吐出するために、電流が当該抵抗器を通って流れる。当該抵抗器が熱を生成すると、噴射チャンバ内の流体のごく一部が気化する。蒸気は急速に膨張し、ノズルオリフィスを介して小さい液滴を噴射チャンバから押し出す。次いで、電流が止められて、当該抵抗器が冷える。蒸気泡は急速に崩壊して、追加の流体を流体リザーバから噴射チャンバに引き込む。
Claims (15)
- 流体吐出デバイスであって、
基板と、
流体を吐出するために前記基板内に形成された多数の行のノズルと、
前記基板上に配置され、前記多数の行のノズルに電気結合された多数のボンディングパッドと、
前記行のノズルを取り囲む、前記基板上に配置された終端リングとを含み、前記終端リングは、
囲い込んだ形状である第1の金属層と、
前記第1の金属層の表面上に配置された第2の金属層とを含み、前記第2の金属層が、前記多数のボンディングパッドに隣接して配置されたギャップを含む、流体吐出デバイス。 - 前記第1の金属層および前記第2の金属層は、アルミニウム、タンタル、アルミニウム・銅、及びタンタル・アルミニウムからなるグループから選択された成分から形成される、請求項1に記載の流体吐出デバイス。
- 前記多数のボンディングパッド及び前記終端リングの一部の上に配置されたカプセルの材料を更に含む、請求項1に記載の流体吐出デバイス。
- 前記多数のボンディングパッドが、前記基板のエッジに沿って配置されている、請求項1に記載の流体吐出デバイス。
- 前記終端リングは、前記多数のボンディングパッドに沿って延びている、請求項1に記載の流体吐出デバイス。
- 前記ギャップは、前記多数のボンディングパッドを含む領域の長さと同じ長さである、請求項1に記載の流体吐出デバイス。
- 前記終端リングの上に配置されたパッシベーション層を更に含む、請求項1に記載の流体吐出デバイス。
- 流体吐出デバイス上に終端リングを形成する方法であって、
前記流体吐出デバイスの基板上に前記終端リングの囲い込んだ第1の金属層を形成し、
前記囲い込んだ第1の金属層上に、囲い込んだ第2の金属層を形成し、
前記終端リングのギャップ付き第2の金属層を形成するために、前記流体吐出デバイスのボンディングパッドの領域に隣接する前記囲い込んだ第2の金属層の一部を除去することを含む、方法。 - 前記囲い込んだ第2の金属層は、前記流体吐出デバイスの多数のボンディングパッドの第1の層と同時に形成される、請求項8に記載の方法。
- 前記終端リング、及び前記流体吐出デバイス上に配置された多数のボンディングパッドの上にカプセルの材料を堆積することを更に含む、請求項8に記載の方法。
- 前記終端リングの上にパッシベーション層を堆積することを更に含む、請求項8に記載の方法。
- 前記パッシベーション層の堆積後に、前記ボンディングパッドの追加の層を堆積することを更に含む、請求項8に記載の方法。
- 流体吐出デバイスであって、
基板と、
流体を吐出するために前記基板内に形成された多数の行のノズルと、
前記基板上に配置され、前記多数の行のノズルをコントローラに電気結合するための多数のボンディングパッドと、
前記多数の行のノズルを機械的および電気的に保護するために、前記行のノズル及び前記多数のボンディングパッドを取り囲む、前記基板上に配置された終端リングとを含み、前記終端リングは、
第1の金属層だけを含むボンディングパッドの領域と、
前記第1の金属層、及び前記第1の金属層上に配置された第2の金属層を含むボンディングパッドでない領域とを含む、流体吐出デバイス。 - 前記第1の金属層および前記第2の金属層は、アルミニウム、タンタル、アルミニウム・銅、及びタンタル・アルミニウムからなるグループから選択された成分から形成される、請求項13に記載のダイ。
- 前記多数のボンディングパッドと前記ダイ終端リングの前記ボンディングパッドの領域の上に配置されたカプセルの材料を更に含む、請求項13に記載のダイ。
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EP3448685B1 (en) | 2021-09-15 |
CN109414929A (zh) | 2019-03-01 |
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