JP2019502269A5 - - Google Patents

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Publication number
JP2019502269A5
JP2019502269A5 JP2018536111A JP2018536111A JP2019502269A5 JP 2019502269 A5 JP2019502269 A5 JP 2019502269A5 JP 2018536111 A JP2018536111 A JP 2018536111A JP 2018536111 A JP2018536111 A JP 2018536111A JP 2019502269 A5 JP2019502269 A5 JP 2019502269A5
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JP
Japan
Prior art keywords
etching
processing
remote plasma
containing precursor
end ring
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JP2018536111A
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English (en)
Japanese (ja)
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JP2019502269A (ja
JP6920309B2 (ja
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Priority claimed from PCT/US2016/069204 external-priority patent/WO2017123423A1/en
Publication of JP2019502269A publication Critical patent/JP2019502269A/ja
Publication of JP2019502269A5 publication Critical patent/JP2019502269A5/ja
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Publication of JP6920309B2 publication Critical patent/JP6920309B2/ja
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JP2018536111A 2016-01-13 2016-12-29 エッチングハードウェアに対する水素プラズマベース洗浄処理 Active JP6920309B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662278255P 2016-01-13 2016-01-13
US62/278,255 2016-01-13
PCT/US2016/069204 WO2017123423A1 (en) 2016-01-13 2016-12-29 Hydrogen plasma based cleaning process for etch hardware

Publications (3)

Publication Number Publication Date
JP2019502269A JP2019502269A (ja) 2019-01-24
JP2019502269A5 true JP2019502269A5 (enExample) 2021-06-10
JP6920309B2 JP6920309B2 (ja) 2021-08-18

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JP2018536111A Active JP6920309B2 (ja) 2016-01-13 2016-12-29 エッチングハードウェアに対する水素プラズマベース洗浄処理

Country Status (6)

Country Link
US (1) US10026597B2 (enExample)
JP (1) JP6920309B2 (enExample)
KR (1) KR102729098B1 (enExample)
CN (2) CN108292601A (enExample)
TW (2) TWI768564B (enExample)
WO (1) WO2017123423A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102157876B1 (ko) * 2018-08-28 2020-09-18 한국기계연구원 리모트 플라즈마 장치를 구비한 진공 펌프 시스템
JP7604145B2 (ja) * 2019-11-25 2024-12-23 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
CN113113280B (zh) * 2020-01-09 2022-06-10 江苏鲁汶仪器有限公司 等离子体处理系统及其开合法拉第组件
KR102860972B1 (ko) 2020-06-10 2025-09-16 삼성전자주식회사 반도체 증착 모니터링 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
JP5184890B2 (ja) * 2004-12-21 2013-04-17 アプライド マテリアルズ インコーポレイテッド 基板のための処理チャンバ
WO2006069085A2 (en) * 2004-12-21 2006-06-29 Applied Materials, Inc. An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20060254613A1 (en) * 2005-05-16 2006-11-16 Dingjun Wu Method and process for reactive gas cleaning of tool parts
JP4773142B2 (ja) * 2005-06-14 2011-09-14 芝浦メカトロニクス株式会社 ステージ及びそれを備えた半導体処理装置
US20100099263A1 (en) * 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
WO2012108321A1 (ja) * 2011-02-08 2012-08-16 株式会社アルバック ラジカルエッチング装置及び方法
KR20130012671A (ko) * 2011-07-26 2013-02-05 삼성전자주식회사 반도체 소자 제조 장비의 세정 방법
JP5982223B2 (ja) * 2012-08-27 2016-08-31 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
JP6049527B2 (ja) * 2013-04-05 2016-12-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6177601B2 (ja) * 2013-06-25 2017-08-09 東京エレクトロン株式会社 クリーニング方法及び基板処理装置
JP6285213B2 (ja) * 2014-03-03 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
US9824865B2 (en) * 2014-03-05 2017-11-21 Lam Research Corporation Waferless clean in dielectric etch process
US9397011B1 (en) 2015-04-13 2016-07-19 Lam Research Corporation Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper

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