JP2019215534A - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

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Publication number
JP2019215534A
JP2019215534A JP2019105804A JP2019105804A JP2019215534A JP 2019215534 A JP2019215534 A JP 2019215534A JP 2019105804 A JP2019105804 A JP 2019105804A JP 2019105804 A JP2019105804 A JP 2019105804A JP 2019215534 A JP2019215534 A JP 2019215534A
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Japan
Prior art keywords
transistor
light
electrode
layer
wiring
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JP2019105804A
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English (en)
Japanese (ja)
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JP2019215534A5 (enExample
Inventor
川島　進
Susumu Kawashima
進 川島
楠本　直人
Naoto Kusumoto
直人 楠本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2019215534A publication Critical patent/JP2019215534A/ja
Publication of JP2019215534A5 publication Critical patent/JP2019215534A5/ja
Priority to JP2023190506A priority Critical patent/JP2024010192A/ja
Priority to JP2025101243A priority patent/JP2025126187A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Optical Filters (AREA)
  • Thin Film Transistor (AREA)
JP2019105804A 2018-06-06 2019-06-06 表示装置および電子機器 Withdrawn JP2019215534A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023190506A JP2024010192A (ja) 2018-06-06 2023-11-08 表示装置および電子機器
JP2025101243A JP2025126187A (ja) 2018-06-06 2025-06-17 半導体装置及び電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018108397 2018-06-06
JP2018108397 2018-06-06

Related Child Applications (1)

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JP2023190506A Division JP2024010192A (ja) 2018-06-06 2023-11-08 表示装置および電子機器

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JP2019215534A true JP2019215534A (ja) 2019-12-19
JP2019215534A5 JP2019215534A5 (enExample) 2022-05-23

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JP2023190506A Withdrawn JP2024010192A (ja) 2018-06-06 2023-11-08 表示装置および電子機器
JP2025101243A Pending JP2025126187A (ja) 2018-06-06 2025-06-17 半導体装置及び電子機器

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Country Status (2)

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US (1) US10770482B2 (enExample)
JP (3) JP2019215534A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022118141A1 (ja) * 2020-12-06 2022-06-09 株式会社半導体エネルギー研究所 表示装置、および表示補正システム

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019234543A1 (ja) 2018-06-06 2019-12-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2020039291A1 (ja) 2018-08-21 2020-02-27 株式会社半導体エネルギー研究所 表示装置および電子機器
KR102863650B1 (ko) 2018-09-12 2025-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP7289850B2 (ja) 2018-11-02 2023-06-12 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP2021153082A (ja) * 2020-03-24 2021-09-30 キオクシア株式会社 半導体装置及び半導体記憶装置
JP7491119B2 (ja) * 2020-07-27 2024-05-28 セイコーエプソン株式会社 画像光生成装置および画像表示装置
CN115224097B (zh) * 2022-07-28 2025-09-26 京东方科技集团股份有限公司 显示基板以及显示装置
CN115547235B (zh) * 2022-10-12 2024-09-10 武汉天马微电子有限公司 显示面板及显示装置

Citations (8)

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JP2001520762A (ja) * 1997-04-11 2001-10-30 スペシャルライト インコーポレイテッド 集積充電ポンプを持つピクセル駆動回路を設けたアクチブマトリックスディスプレイ
JP2005062794A (ja) * 2003-03-28 2005-03-10 Sharp Corp 表示装置およびその駆動方法
JP2008191682A (ja) * 2002-01-24 2008-08-21 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009116115A (ja) * 2007-11-07 2009-05-28 Toshiba Matsushita Display Technology Co Ltd アクティブマトリクス型表示装置およびその駆動方法
JP2010266494A (ja) * 2009-05-12 2010-11-25 Sony Corp 表示装置、表示方法
JP2011119221A (ja) * 2009-12-04 2011-06-16 Samsung Mobile Display Co Ltd 有機発光装置
US20150077314A1 (en) * 2013-09-13 2015-03-19 Samsung Display Co., Ltd. Amoled display device and driving method thereof
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KR20090060750A (ko) * 2007-12-10 2009-06-15 삼성전자주식회사 유기 발광 표시 장치
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TWI780204B (zh) 2017-08-31 2022-10-11 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
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JP2008191682A (ja) * 2002-01-24 2008-08-21 Semiconductor Energy Lab Co Ltd 半導体装置
JP2005062794A (ja) * 2003-03-28 2005-03-10 Sharp Corp 表示装置およびその駆動方法
JP2009116115A (ja) * 2007-11-07 2009-05-28 Toshiba Matsushita Display Technology Co Ltd アクティブマトリクス型表示装置およびその駆動方法
JP2010266494A (ja) * 2009-05-12 2010-11-25 Sony Corp 表示装置、表示方法
JP2011119221A (ja) * 2009-12-04 2011-06-16 Samsung Mobile Display Co Ltd 有機発光装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022118141A1 (ja) * 2020-12-06 2022-06-09 株式会社半導体エネルギー研究所 表示装置、および表示補正システム
US12243482B2 (en) 2020-12-06 2025-03-04 Semiconductor Energy Laboratory Co., Ltd. Display device and display correction system

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Publication number Publication date
US20190378859A1 (en) 2019-12-12
JP2025126187A (ja) 2025-08-28
JP2024010192A (ja) 2024-01-23
US10770482B2 (en) 2020-09-08

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