JP2019203957A - 表示装置及びアレイ基板 - Google Patents
表示装置及びアレイ基板 Download PDFInfo
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- JP2019203957A JP2019203957A JP2018097939A JP2018097939A JP2019203957A JP 2019203957 A JP2019203957 A JP 2019203957A JP 2018097939 A JP2018097939 A JP 2018097939A JP 2018097939 A JP2018097939 A JP 2018097939A JP 2019203957 A JP2019203957 A JP 2019203957A
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- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Abstract
Description
基材と、前記基材の上方に位置する走査線と、半導体層と、前記走査線と前記半導体層との間に位置する第1無機絶縁膜と、前記走査線と交差し前記半導体層と電気的に接続された第1信号線と、前記第1信号線に接する主面を有し前記半導体層と前記第1信号線との間に位置する第2無機絶縁膜と、前記主面に接する容量電極と、前記容量電極に重畳する画素電極と、前記第1信号線及び前記容量電極を覆うとともに前記第1信号線と前記画素電極との間及び前記容量電極と前記画素電極との間にそれぞれ位置する第3無機絶縁膜と、を備えた第1基板と、共通電極を備えた第2基板と、前記画素電極と前記共通電極との間に位置する電気泳動素子と、を備えた表示装置が提供される。
本実施形態によれば、
基材と、前記基材の上方に位置する走査線と、半導体層と、前記走査線と前記半導体層との間に位置する第1無機絶縁膜と、前記走査線と交差し前記半導体層と電気的に接続された信号線と、前記信号線に接する主面を有し前記半導体層と前記信号線との間に位置する第2無機絶縁膜と、前記主面に接する容量電極と、前記容量電極に重畳する画素電極と、前記信号線及び前記容量電極を覆うとともに前記信号線と前記画素電極との間及び前記容量電極と前記画素電極との間にそれぞれ位置する第3無機絶縁膜と、を備えたアレイ基板が提供される。
フレキシブル配線基板2は、第1基板SUB1に接続されている。ICチップ3は、フレキシブル配線基板2に接続されている。なお、ICチップ3は、第1基板SUB1に接続されてもよい。ゲートドライバGD1及びGD2、ソースドライバSD、及び、電源CDは、ICチップ3に内蔵されてもよい。
容量電極100は、ドレイン電極DEと信号線S2との間において、幅W1を有している。容量電極100は、走査線G1と交差する位置において、幅W2を有している。本明細書において、幅とは、第1方向Xに沿った長さとする。図示した例では、幅W1と幅W2は、略同等であるが、幅W2は幅W1より小さくてもよい。
図示したように、4つの画素電極PE2乃至PE5は、画素電極PE1の周囲に配置されている。画素電極PE2、画素電極PE1、及び、画素電極PE3は、この順に第2方向Yに並び、容量電極100に重畳している。なお、図示した例では、画素電極PE2、画素電極PE1、及び、画素電極PE3は、信号線S1に重畳しているが、信号線S2に重畳していてもよいし、信号線S1及びS2のいずれにも重畳していなくてもよい。画素電極PE4、画素電極PE1、及び、画素電極PE5は、この順に第1方向Xに並んでいる。容量電極100は、画素電極PE2と画素電極PE1との間、及び、画素電極PE1と画素電極PE3との間に存在する一方で、画素電極PE4と画素電極PE1との間、及び、画素電極PE1と画素電極PE5との間には存在しない。
画素電極PE1は、端部E11乃至E14を有している。端部E11は、信号線S1及び画素電極PE4に近接する端部である。端部E12は、信号線S2及び画素電極PE5に近接する端部である。端部E13は、走査線G1及び画素電極PE2に近接する端部である。端部E14は、走査線G2及び画素電極PE3に近接する端部である。端部E11及びE12は、第2方向Yに沿って延出している。端部E13及びE14は、第1方向Xに沿って延出し、容量電極100に重畳している。
マイクロカプセル30は、分散媒31と、複数の黒色粒子32と、複数の白色粒子33とを備えている。黒色粒子32及び白色粒子33は、電気泳動粒子と称される場合もある。マイクロカプセル30の外殻34は、例えば、アクリル樹脂等の透明な樹脂によって形成されている。分散媒31は、マイクロカプセル30内において、黒色粒子32及び白色粒子33を分散させる液体である。黒色粒子32及び白色粒子33は、互いに逆極性の電荷を有している。例えば、黒色粒子32は正に帯電し、白色粒子33は負に帯電している。なお、マイクロカプセル30は、黒色粒子32及び白色粒子33の他に、赤、緑、青、イエロー、シアン、マゼンタなどの他の色の電気泳動粒子を備えていてもよい。また、上記の他の色の電気泳動粒子は、黒色粒子32及び白色粒子33の少なくとも一方と置換されてもよい。
一方、画素PXが白を表示する場合、画素電極PE1が共通電極CEよりも相対的に低電位に保持される。すなわち、共通電極CEの電位を基準電位としたとき、画素電極PE1が負極性に保持される。これにより、負に帯電した白色粒子33が共通電極CE側へ引き寄せられる一方、正に帯電した黒色粒子32が画素電極PE1に引き寄せられる。その結果、画素PXを観察すると白色が視認される。
このような第2構成例においても、上記の第1構成例と同様の効果が得られる。
図8で示した第3構成例において、幅W1は第1幅に相当し、幅W2は第2幅に相当する。
このような第4構成例においても、上記の第1構成例と同様の効果が得られる。
半導体層SC1は、第1方向Xに沿って延出している。端部SCAは、貫通孔CH1によって信号線S1と電気的に接続されている。端部SCBは、ドレイン電極DEと重畳し、貫通孔CH2においてドレイン電極DEと電気的に接続されている。半導体層SC1は、端部SCAと端部SCBとの間において、分岐部GA及びGBと交差している。ゲート電極GEは、分岐部GA及びGBのうち、半導体層SC1と重畳する領域に相当する。
画素電極PE1は、貫通孔CH3においてドレイン電極DEと電気的に接続されている。容量電極100は、画素電極PE1と重畳しない位置において、狭小化されている。
このような第5構成例においても、上記の第1構成例と同様の効果が得られる。
(1)
基材と、前記基材の上方に位置する走査線と、半導体層と、前記走査線と前記半導体層との間に位置する第1無機絶縁膜と、前記走査線と交差し前記半導体層と電気的に接続された第1信号線と、前記第1信号線に接する主面を有し前記半導体層と前記第1信号線との間に位置する第2無機絶縁膜と、前記主面に接する容量電極と、前記容量電極に重畳する画素電極と、前記第1信号線及び前記容量電極を覆うとともに前記第1信号線と前記画素電極との間及び前記容量電極と前記画素電極との間にそれぞれ位置する第3無機絶縁膜と、を備えた第1基板と、
共通電極を備えた第2基板と、
前記画素電極と前記共通電極との間に位置する電気泳動素子と、
を備えた表示装置。
(2)
前記電気泳動素子は、前記画素電極の外側で前記第3無機絶縁膜に接着されている、(1)に記載の表示装置。
(3)
前記基材と前記容量電極との間において、前記第1無機絶縁膜及び前記第2無機絶縁膜がこの順に積層され、導電層が介在しない、(1)に記載の表示装置。
(4)
さらに、前記半導体層と電気的に接続され、前記主面に接するドレイン電極を備え、
前記第3無機絶縁膜は、前記ドレイン電極と前記第1信号線との間、及び、前記ドレイン電極と前記容量電極との間において、前記主面に接している、(1)に記載の表示装置。
(5)
前記走査線は、前記基材と前記第1無機絶縁膜との間に位置し、
前記半導体層は、前記第1無機絶縁膜と前記第2無機絶縁膜との間に位置している、(1)に記載の表示装置。
(6)
前記半導体層は、前記基材と前記第1無機絶縁膜との間に位置し、
前記走査線は、前記第1無機絶縁膜と前記第2無機絶縁膜との間に位置している、(1)に記載の表示装置。
(7)
前記第1信号線及び前記容量電極は、同一材料によって形成されている、(1)に記載の表示装置。
(8)
さらに、前記走査線と交差する第2信号線を備え、
平面視で、前記容量電極は、前記第1信号線と前記第2信号線との間に位置し、前記走査線と交差している、(1)に記載の表示装置。
(9)
前記容量電極において、前記走査線と重畳する位置の幅は、前記走査線と重畳しない位置の幅より小さい、(8)に記載の表示装置。
(10)
前記容量電極において、前記画素電極より外側の幅は、前記画素電極と重畳する位置の幅より小さい、(8)に記載の表示装置。
(11)
前記画素電極は、前記第1信号線に近接する第1端部と、前記第2信号線に近接する第2端部と、を有し、
前記容量電極は、前記第1信号線に近接する第3端部と、前記第2信号線に近接する第4端部と、を有し、
平面視で、前記第3端部及び前記第4端部は、前記第1端部と前記第2端部との間に位置している、(8)に記載の表示装置。
(12)
基材と、
前記基材の上方に位置する走査線と、
半導体層と、
前記走査線と前記半導体層との間に位置する第1無機絶縁膜と、
前記走査線と交差し前記半導体層と電気的に接続された信号線と、
前記信号線に接する主面を有し前記半導体層と前記信号線との間に位置する第2無機絶縁膜と、
前記主面に接する容量電極と、
前記容量電極に重畳する画素電極と、
前記信号線及び前記容量電極を覆うとともに前記信号線と前記画素電極との間及び前記容量電極と前記画素電極との間にそれぞれ位置する第3無機絶縁膜と、
を備えたアレイ基板。
Claims (8)
- 基材と、前記基材の上方に位置する走査線と、半導体層と、前記走査線と前記半導体層との間に位置する第1無機絶縁膜と、前記走査線と交差し前記半導体層と電気的に接続された第1信号線と、前記第1信号線に接する主面を有し前記半導体層と前記第1信号線との間に位置する第2無機絶縁膜と、前記主面に接する容量電極と、前記容量電極に重畳する画素電極と、前記第1信号線及び前記容量電極を覆うとともに前記第1信号線と前記画素電極との間及び前記容量電極と前記画素電極との間にそれぞれ位置する第3無機絶縁膜と、を備えた第1基板と、
共通電極を備えた第2基板と、
前記画素電極と前記共通電極との間に位置する電気泳動素子と、
を備えた表示装置。 - 前記電気泳動素子は、前記画素電極の外側で前記第3無機絶縁膜に接着されている、請求項1に記載の表示装置。
- 前記基材と前記容量電極との間において、前記第1無機絶縁膜及び前記第2無機絶縁膜がこの順に積層され、導電層が介在しない、請求項1に記載の表示装置。
- さらに、前記半導体層と電気的に接続され、前記主面に接するドレイン電極を備え、
前記第3無機絶縁膜は、前記ドレイン電極と前記第1信号線との間、及び、前記ドレイン電極と前記容量電極との間において、前記主面に接している、請求項1に記載の表示装置。 - さらに、前記走査線と交差する第2信号線を備え、
平面視で、前記容量電極は、前記第1信号線と前記第2信号線との間に位置し、前記走査線と交差している、請求項1に記載の表示装置。 - 前記容量電極において、前記走査線と重畳する位置の幅は、前記走査線と重畳しない位置の幅より小さい、請求項5に記載の表示装置。
- 前記容量電極において、前記画素電極より外側の幅は、前記画素電極と重畳する位置の幅より小さい、請求項5に記載の表示装置。
- 基材と、
前記基材の上方に位置する走査線と、
半導体層と、
前記走査線と前記半導体層との間に位置する第1無機絶縁膜と、
前記走査線と交差し前記半導体層と電気的に接続された信号線と、
前記信号線に接する主面を有し前記半導体層と前記信号線との間に位置する第2無機絶縁膜と、
前記主面に接する容量電極と、
前記容量電極に重畳する画素電極と、
前記信号線及び前記容量電極を覆うとともに前記信号線と前記画素電極との間及び前記容量電極と前記画素電極との間にそれぞれ位置する第3無機絶縁膜と、
を備えたアレイ基板。
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