JP2019194943A5 - - Google Patents

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JP2019194943A5
JP2019194943A5 JP2018088213A JP2018088213A JP2019194943A5 JP 2019194943 A5 JP2019194943 A5 JP 2019194943A5 JP 2018088213 A JP2018088213 A JP 2018088213A JP 2018088213 A JP2018088213 A JP 2018088213A JP 2019194943 A5 JP2019194943 A5 JP 2019194943A5
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Japan
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microwave
power
low level
frequency
pulse
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JP2018088213A
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Japanese (ja)
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JP6910320B2 (ja
JP2019194943A (ja
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Priority claimed from JP2018088213A external-priority patent/JP6910320B2/ja
Priority to KR1020190048822A priority patent/KR102768178B1/ko
Priority to US16/396,831 priority patent/US10748746B2/en
Publication of JP2019194943A publication Critical patent/JP2019194943A/ja
Publication of JP2019194943A5 publication Critical patent/JP2019194943A5/ja
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JP2018088213A 2018-05-01 2018-05-01 マイクロ波出力装置及びプラズマ処理装置 Active JP6910320B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018088213A JP6910320B2 (ja) 2018-05-01 2018-05-01 マイクロ波出力装置及びプラズマ処理装置
KR1020190048822A KR102768178B1 (ko) 2018-05-01 2019-04-26 마이크로파 출력 장치 및 플라즈마 처리 장치
US16/396,831 US10748746B2 (en) 2018-05-01 2019-04-29 Microwave output device and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018088213A JP6910320B2 (ja) 2018-05-01 2018-05-01 マイクロ波出力装置及びプラズマ処理装置

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JP2019194943A JP2019194943A (ja) 2019-11-07
JP2019194943A5 true JP2019194943A5 (enExample) 2021-04-22
JP6910320B2 JP6910320B2 (ja) 2021-07-28

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US (1) US10748746B2 (enExample)
JP (1) JP6910320B2 (enExample)
KR (1) KR102768178B1 (enExample)

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JP7437981B2 (ja) * 2020-03-06 2024-02-26 東京エレクトロン株式会社 プラズマ処理装置
JP2021180070A (ja) * 2020-05-11 2021-11-18 東京エレクトロン株式会社 プラズマ処理装置及びマイクロ波制御方法
JP7450485B2 (ja) * 2020-07-22 2024-03-15 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
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CN114496697A (zh) * 2020-10-28 2022-05-13 东京毅力科创株式会社 等离子体处理装置
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US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
DE102022113502A1 (de) * 2022-05-30 2023-11-30 TRUMPF Hüttinger GmbH + Co. KG Modul und Verfahren zur Erzeugung eines gepulsten Mikrowellenausgangssignals
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
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