JP6910320B2 - マイクロ波出力装置及びプラズマ処理装置 - Google Patents

マイクロ波出力装置及びプラズマ処理装置 Download PDF

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Publication number
JP6910320B2
JP6910320B2 JP2018088213A JP2018088213A JP6910320B2 JP 6910320 B2 JP6910320 B2 JP 6910320B2 JP 2018088213 A JP2018088213 A JP 2018088213A JP 2018088213 A JP2018088213 A JP 2018088213A JP 6910320 B2 JP6910320 B2 JP 6910320B2
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microwave
power
waveform
pulse
frequency
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Japanese (ja)
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JP2019194943A5 (enExample
JP2019194943A (ja
Inventor
和史 金子
和史 金子
幸紀 花田
幸紀 花田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018088213A priority Critical patent/JP6910320B2/ja
Priority to KR1020190048822A priority patent/KR102768178B1/ko
Priority to US16/396,831 priority patent/US10748746B2/en
Publication of JP2019194943A publication Critical patent/JP2019194943A/ja
Publication of JP2019194943A5 publication Critical patent/JP2019194943A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018088213A 2018-05-01 2018-05-01 マイクロ波出力装置及びプラズマ処理装置 Active JP6910320B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018088213A JP6910320B2 (ja) 2018-05-01 2018-05-01 マイクロ波出力装置及びプラズマ処理装置
KR1020190048822A KR102768178B1 (ko) 2018-05-01 2019-04-26 마이크로파 출력 장치 및 플라즈마 처리 장치
US16/396,831 US10748746B2 (en) 2018-05-01 2019-04-29 Microwave output device and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018088213A JP6910320B2 (ja) 2018-05-01 2018-05-01 マイクロ波出力装置及びプラズマ処理装置

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JP2019194943A JP2019194943A (ja) 2019-11-07
JP2019194943A5 JP2019194943A5 (enExample) 2021-04-22
JP6910320B2 true JP6910320B2 (ja) 2021-07-28

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US (1) US10748746B2 (enExample)
JP (1) JP6910320B2 (enExample)
KR (1) KR102768178B1 (enExample)

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US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
JP7437981B2 (ja) * 2020-03-06 2024-02-26 東京エレクトロン株式会社 プラズマ処理装置
JP2021180070A (ja) * 2020-05-11 2021-11-18 東京エレクトロン株式会社 プラズマ処理装置及びマイクロ波制御方法
JP7450485B2 (ja) * 2020-07-22 2024-03-15 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
WO2022055609A2 (en) * 2020-08-31 2022-03-17 Lyten, Inc. Reactor system coupled to an energy emitter control circuit
JP7503993B2 (ja) * 2020-10-08 2024-06-21 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN114496697A (zh) * 2020-10-28 2022-05-13 东京毅力科创株式会社 等离子体处理装置
JP7561106B2 (ja) 2020-10-28 2024-10-03 東京エレクトロン株式会社 プラズマ処理装置
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
DE102022113502A1 (de) * 2022-05-30 2023-11-30 TRUMPF Hüttinger GmbH + Co. KG Modul und Verfahren zur Erzeugung eines gepulsten Mikrowellenausgangssignals
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

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US6200651B1 (en) * 1997-06-30 2001-03-13 Lam Research Corporation Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source
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JP2012109080A (ja) * 2010-11-16 2012-06-07 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
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JP2015115564A (ja) * 2013-12-16 2015-06-22 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
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JP6055537B2 (ja) * 2015-12-21 2016-12-27 東京エレクトロン株式会社 プラズマ処理方法
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JP6883488B2 (ja) * 2017-08-18 2021-06-09 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
US10748746B2 (en) 2020-08-18
US20190341228A1 (en) 2019-11-07
JP2019194943A (ja) 2019-11-07
KR20190126246A (ko) 2019-11-11
KR102768178B1 (ko) 2025-02-18

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