JP2019153708A - Holding device and method for manufacturing holding device - Google Patents

Abstract

To suppress a decrease in controllability of temperature distribution on an adsorption surface of a ceramic member.SOLUTION: A holding device comprises a first ceramic member, a third surface, a second ceramic member, an organic unit arranged between the first ceramic member and the second ceramic member, a plurality of heater electrodes arranged in the organic unit, a base member joined to the second ceramic member, and a power feeding unit. The holding device further includes a driver electrode arranged inside the second ceramic member, a first conductive unit electrically connecting one end part of at least one of a plurality of heater electrodes and the driver electrode, and a second conductive unit arranged in a position different from the first conductive unit in a first direction view substantially perpendicular to a first surface and electrically connecting the driver electrode and the power feeding unit.SELECTED DRAWING: Figure 2

Description

  The technology disclosed in this specification relates to a holding device.

  For example, an electrostatic chuck is used as a holding device for holding a wafer when manufacturing a semiconductor. The electrostatic chuck is bonded to the ceramic member having a substantially planar surface (hereinafter referred to as “attraction surface”) substantially perpendicular to a predetermined direction (hereinafter referred to as “first direction”), and the ceramic member. A base member in which a coolant channel is formed and a chuck electrode provided inside the ceramic member are provided, and an electrostatic attractive force generated when a voltage is applied to the chuck electrode is used to The wafer is sucked and held on the suction surface.

  If the temperature of the wafer held on the chucking surface of the electrostatic chuck does not reach a desired temperature, the accuracy of each process (film formation, etching, etc.) on the wafer may be reduced. The ability to control the distribution is required. For this reason, the electrostatic chuck provided with the organic part by which the some heater electrode is arrange | positioned is known (refer patent document 1). In this electrostatic chuck, the ceramic member includes a first ceramic member and a second ceramic member, and an organic portion is disposed between the first ceramic member and the second ceramic member. A plurality of heater electrodes are arranged in the organic part. When a voltage is applied to each heater electrode, the ceramic member is heated by the heat generation of each heater electrode. Further, when the coolant is supplied to the coolant channel formed in the base member, the ceramic member is cooled by the base member. Thereby, control of the temperature distribution of the suction surface of the ceramic member (and control of the temperature distribution of the wafer held on the suction surface) is realized.

Japanese Patent Application Laid-Open No. 2016-1000047

  In the electrostatic chuck including the organic portion in which the plurality of heater electrodes are arranged as described above, each end portion of the heater electrode is connected to the base member side of the second ceramic member through only a via extending linearly in the vertical direction. It is electrically connected to the arranged power feeding unit. For this reason, a region of the adsorption surface that overlaps the via in the first direction view becomes a temperature singular point due to current concentration in the via, and the controllability of the temperature distribution of the adsorption surface of the ceramic member (and thus the temperature of the wafer) The controllability of the distribution may be reduced.

  Such a problem is not limited to the electrostatic chuck that holds the wafer using electrostatic attraction, but is disposed between the first ceramic member, the second ceramic member, and both ceramic members, This is a problem common to a holding device that includes an organic part in which a heater electrode is disposed and a base member and holds an object on the surface of the first ceramic plate.

  The present specification discloses a technique capable of solving at least a part of the problems described above.

  The technology disclosed in this specification can be implemented as the following forms.

(1) A holding device disclosed in the present specification includes a first ceramic member having a first surface, a second surface opposite to the first surface, a third surface, A second ceramic member having a fourth surface opposite to the third surface, wherein the third surface is arranged to face the second surface of the first ceramic member. Disposed between the second surface of the first ceramic member and the third surface of the second ceramic member, and disposed in the organic portion, the organic portion having an organic material as a main component. A plurality of heater electrodes, a fifth surface, and a sixth surface opposite to the fifth surface, a coolant channel is formed, and the fifth surface is the second ceramics. A base member bonded to the fourth surface of the member, and the second ceramic A holding unit that holds an object on the first surface of the first ceramic member, and further includes the second ceramic member. A driver electrode disposed inside the first electrode, a first conductive portion that electrically connects at least one end of the plurality of heater electrodes and the driver electrode, and a first substantially perpendicular to the first surface. And a second conductive part that is disposed at a position different from the first conductive part when viewed in the direction and electrically connects the driver electrode and the power feeding part.

  According to the holding device, the first conductive portion that electrically connects at least one end of the plurality of heater electrodes and the driver electrode, and the second conductive that electrically connects the driver electrode and the power feeding portion. The parts are arranged at different positions in the first direction view. For this reason, generation | occurrence | production of the temperature singularity resulting from current concentration can be suppressed compared with the structure arrange | positioned in the position where the 1st electroconductive part and the 2nd electroconductive part correspond mutually. Here, if the driver electrode is to be arranged inside the organic part, for example, the following problem may occur. That is, by forming the driver electrode, the organic portion having a relatively low thermal conductivity becomes thick, and accordingly, the temperature distribution of the adsorption surface of the ceramic member due to the decrease in temperature responsiveness of the holding device Controllability (and consequently, controllability of the wafer temperature distribution) decreases. In addition, if the thickness of the organic part is to be suppressed, the unevenness due to the thickness of the driver electrode cannot be absorbed and bubbles are easily contained in the organic part, the thermal conductivity of the organic part is further deteriorated, and the temperature singularity is also increased. appear. For this reason, it is necessary to make the driver electrode thin. However, as a result, the resistance value of the driver electrode increases, and as a result, the driver electrode generates heat, and the controllability of the temperature distribution on the adsorption surface of the ceramic member is lowered. On the other hand, according to the present holding device, the driver electrode that electrically connects the first conductive portion and the second conductive portion is arranged inside the second ceramic member, not the organic portion. Yes. Thereby, compared with the structure which arrange | positions a driver electrode inside a 2nd ceramic member, it suppresses that the controllability (and by extension, controllability of the temperature distribution of a wafer) of the temperature distribution of the adsorption surface of a ceramic member falls. be able to.

(2) A method for manufacturing a holding device disclosed in the present specification has a first surface, and the method for manufacturing a holding device for holding an object on the first surface includes: A step of preparing a first ceramic member having a second surface opposite to the first surface, and a step of preparing an intermediate bonded body, wherein the intermediate bonded body is a third surface. And a second ceramic member having a fourth surface opposite to the third surface, a fifth surface, and a sixth surface opposite to the fifth surface. A refrigerant flow path is formed, and the fifth surface is disposed on the fourth surface side of the second ceramic member and a base member joined to the fourth surface of the second ceramic member. Disposed on the third surface of the power feeding portion and the second ceramic member, An organic portion mainly composed of a material; a plurality of heater electrodes disposed on a surface of the organic portion opposite to the second ceramic member; and a driver disposed within the second ceramic member. An electrode, a first conductive portion that electrically connects at least one end of the plurality of heater electrodes and the driver electrode, and the first direction in a first direction substantially perpendicular to the third surface. And a second conductive portion that is disposed at a position different from the conductive portion and electrically connects the driver electrode and the power feeding portion, and supplies power to the power feeding portion of the intermediate joined body In this state, the temperature distribution of the intermediate bonded body is determined based on the step of measuring the temperature distribution in the plane direction substantially parallel to the third surface of the intermediate bonded body and the measurement result of the temperature distribution of the intermediate bonded body. The compound is distributed to achieve the desired distribution. A step of processing at least one of the heater electrodes, the third surface of the second ceramic member in the intermediate bonded body after processing, and the second surface of the first ceramic member Bonding the first ceramic member to the intermediate bonded body so that the organic portion and the plurality of heater electrodes are interposed therebetween.

  According to the manufacturing method of the holding device, the temperature distribution in the plane direction substantially parallel to the third surface of the intermediate bonded body is measured. Here, the intermediate joined body is obtained by joining a base member that has a particularly large influence on the temperature distribution to the second ceramic member. Further, in the intermediate joined body, the heater electrode is disposed on the surface of the organic portion, and the heater electrode can be processed. Therefore, based on the measurement result of the temperature distribution of the intermediate bonded body, at least one of the plurality of heater electrodes can be processed so that the temperature distribution of the intermediate bonded body becomes a desired distribution. As a result, the temperature distribution controllability (and hence the wafer temperature distribution controllability) of the ceramic member adsorption surface due to fluctuations in the temperature distribution caused by joining the base member to the ceramic member is suppressed. be able to.

  The technique disclosed in the present specification can be realized in various forms, for example, forms such as a holding device, an electrostatic chuck, a heater device such as a CVD heater, a vacuum chuck, and a manufacturing method thereof. Can be realized.

1 is a perspective view schematically showing an external configuration of an electrostatic chuck 100 in the present embodiment. It is explanatory drawing which shows roughly the XZ cross-sectional structure of the electrostatic chuck 100 in this embodiment. It is explanatory drawing which shows roughly the XY cross-sectional structure of the electrostatic chuck 100 in this embodiment. It is a flowchart which shows the manufacturing method of the electrostatic chuck 100 in this embodiment. 5 is an explanatory view schematically showing a manufacturing process of the electrostatic chuck 100. FIG.

A. Embodiment:
A-1. Configuration of the electrostatic chuck 100:
FIG. 1 is a perspective view schematically showing an external configuration of the electrostatic chuck 100 in the present embodiment, and FIG. 2 is an explanatory diagram schematically showing an XZ sectional configuration of the electrostatic chuck 100 in the present embodiment. FIG. 3 is an explanatory diagram schematically showing an XY cross-sectional configuration of the electrostatic chuck 100 according to the present embodiment. FIG. 3 shows an XY cross-sectional configuration of the electrostatic chuck 100 at the position of III-III in FIG. In each figure, XYZ axes orthogonal to each other for specifying the direction are shown. In this specification, for convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. However, the electrostatic chuck 100 is actually installed in a direction different from such a direction. May be.

  The electrostatic chuck 100 is a device that attracts and holds an object (for example, a wafer W) by electrostatic attraction, and is used, for example, to fix the wafer W in a vacuum chamber of a semiconductor manufacturing apparatus. The electrostatic chuck 100 includes a first ceramic member 10, an organic portion 70, a second ceramic member 11, and a base member 20 that are arranged in a predetermined arrangement direction (in this embodiment, the vertical direction (Z-axis direction)). Is provided.

  The first ceramic member 10 includes a substantially circular planar upper surface (hereinafter referred to as “suction surface”) S1 substantially orthogonal to the arrangement direction (Z-axis direction) and a lower surface S2 on the opposite side of the suction surface S1. It is a plate-shaped member having a ceramic material (for example, alumina, aluminum nitride, etc.). The diameter of the first ceramic member 10 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the first ceramic member 10 is, for example, about 1 mm to 10 mm. The adsorption surface S1 of the first ceramic member 10 corresponds to the first surface in the claims, the lower surface S2 corresponds to the second surface in the claims, and the Z-axis direction corresponds to the claims. It corresponds to the first direction in the range. In this specification, a direction perpendicular to the Z-axis direction is referred to as a “plane direction”.

  As shown in FIG. 2, a chuck electrode 40 formed of a conductive material (for example, tungsten, molybdenum, platinum, etc.) is disposed inside the first ceramic member 10. The shape of the chuck electrode 40 as viewed in the Z-axis direction is, for example, a substantially circular shape. When a voltage is applied to the chuck electrode 40 from a power source (not shown), an electrostatic attractive force is generated, and the wafer W is attracted and fixed to the attracting surface S1 of the first ceramic member 10 by the electrostatic attractive force.

  The second ceramic member 11 is a plate-like member having a substantially circular planar upper surface S3 substantially orthogonal to the vertical direction (Z-axis direction) and a lower surface S4 on the opposite side of the upper surface S3. Or aluminum nitride). The diameter of the second ceramic member 11 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the second ceramic member 11 is, for example, about 1 mm to 10 mm. The first ceramic member 10 and the second ceramic member 11 are arranged so that the lower surface S2 of the first ceramic member 10 and the upper surface S3 of the second ceramic member 11 face each other in the vertical direction. The upper surface S3 of the second ceramic member 11 corresponds to the third surface in the claims, and the lower surface S4 corresponds to the fourth surface in the claims.

  The organic part 70 is a substantially circular plate-like member that is substantially orthogonal to the vertical direction (Z-axis direction), and is formed of a material mainly composed of an organic material. In addition, the main component here means a component having the largest content ratio (weight ratio). In this embodiment, the organic material is a polyimide resin. In the organic part 70, a heater electrode layer 50 for controlling the temperature distribution of the suction surface S1 of the first ceramic member 10 (that is, controlling the temperature distribution of the wafer W held on the suction surface S1) is disposed. Yes. A configuration for supplying power to the heater electrode layer 50 is disposed in the organic portion 70 and the second ceramic member 11. The configuration for supplying power to the organic unit 70, the heater electrode layer 50, and the heater electrode layer 50 will be described in detail later.

  The base member 20 is, for example, a plate member having a circular plane having the same diameter as the first ceramic member 10 and the second ceramic member 11 or having a larger diameter than the first ceramic member 10 or the like. Or aluminum alloy). The diameter of the base member 20 is, for example, about 220 mm to 550 mm (usually 220 mm to 350 mm), and the thickness of the base member 20 is, for example, about 20 mm to 40 mm.

  The base member 20 is joined to the second ceramic member 11 by a joint portion 30 disposed between the lower surface S4 of the second ceramic member 11 and the upper surface S5 of the base member 20. The joint portion 30 is made of an adhesive such as a silicone resin, an acrylic resin, or an epoxy resin. The thickness of the joint part 30 is, for example, about 0.1 mm to 1 mm. The upper surface S5 of the base member 20 corresponds to the fifth surface in the claims, and the lower surface S6 of the base member 20 corresponds to the sixth surface in the claims.

  A coolant channel 21 is formed inside the base member 20. When a coolant (for example, a fluorine-based inert liquid or water) flows through the coolant channel 21, the base member 20 is cooled, and the space between the base member 20 and the second ceramic member 11 via the joint portion 30 is cooled. The first ceramic member 10 and the second ceramic member 11 are cooled by heat transfer (heat drawing), and the wafer W held on the suction surface S1 of the first ceramic member 10 is cooled. Thereby, control of the temperature distribution of the wafer W is implement | achieved.

A-2. Composition of organic part 70 etc .:
Next, the organic part 70, the heater electrode layer 50, and the configuration for supplying power to the heater electrode layer 50 will be described in detail. The organic unit 70 includes a first organic layer 71 and a second organic layer 72. Each of the first organic layer 71 and the second organic layer 72 is a disk-shaped sheet having substantially the same diameter as the first ceramic member 10 and the base member 20. The first organic layer 71 and the second organic layer 72 are arranged such that the upper surface of the first organic layer 71 and the lower surface of the second organic layer 72 are opposed to each other in the vertical direction (Z-axis direction). Yes. The lower surface of the first organic layer 71 is in contact with the upper surface S3 of the second ceramic member 11, and the upper surface of the second organic layer 72 is in contact with the lower surface S2 of the first ceramic member 10. The vertical thickness of the second organic layer 72 is larger than the vertical thickness of the first organic layer 71 in order to absorb the irregularities of the first ceramic member 10 and the second ceramic member 11. Is preferred.

  The heater electrode layer 50 is disposed so as to be sandwiched between the first organic layer 71 and the second organic layer 72. Specifically, the heater electrode layer 50 is disposed on the upper surface of the first organic layer 71, and the second organic layer so as to cover the heater electrode layer 50 disposed on the first organic layer 71. 72 is arranged. The heater electrode layer 50 is formed of a conductive material (for example, aluminum, nickel, copper, stainless steel, etc.). As shown in FIG. 3, the heater electrode layer 50 includes a plurality of heater electrodes 500. In FIG. 3, only three heater electrodes 500 (hereinafter, the first heater electrode 500A, the second heater electrode 500B, and the third heater electrode 500C) among the plurality of heater electrodes 500 included in the electrostatic chuck 100 are included. The other heater electrode 500 is not shown. Each heater electrode 500 includes a heater line portion 510, which is a linear resistance heating element as viewed in the Z-axis direction, and heater pad portions (first heater pad portion 521 and second heater portion) connected to both ends of the heater line portion 510. Heater pad portion 522). In this way, by arranging the heater electrode 500 in the organic portion 70 as compared with the configuration in which the heater electrode 500 is arranged in the ceramic member, in the manufacturing process of the electrostatic chuck 100, using photolithography or the like, The heater electrode 500 can be formed on the organic layer with a high dimensional accuracy and a uniform thickness.

  As shown in FIG. 2, the electrostatic chuck 100 has a configuration for supplying power to each heater electrode 500 constituting the heater electrode layer 50. Specifically, the electrostatic chuck 100 includes a plurality of driver electrodes 60. In FIG. 2, only four driver electrodes 60 (hereinafter referred to as a first driver electrode 60A, a second driver electrode 60B, a third driver electrode 60C, and a common driver electrode 60D) among the plurality of driver electrodes 60 are shown. The other driver electrodes 60 are not shown. Each driver electrode 60 is formed of a conductive material (for example, tungsten, molybdenum, platinum, etc.). Each driver electrode 60 is a flat conductive pattern substantially parallel to the surface direction. In addition, each driver electrode 60 is disposed inside the second ceramic member 11. The cross-sectional area of the driver electrode 60 is 10 times or more the cross-sectional area of the heater electrode 500.

  The first heater pad portions 521 of the plurality of heater electrodes 500 are electrically connected to different driver electrodes 60, respectively, and the second heater pad portions 522 of the plurality of heater electrodes 500 are common driver electrodes. 60 is electrically connected. Specifically, the first heater pad portion 521 of the first heater electrode 500A is electrically connected to the first driver electrode 60A via the first heater-side via portion 710A, and the first heater electrode The second heater pad portion 522 of 500A is electrically connected to the common driver electrode 60D through a heater side via portion (not shown). The first heater pad portion 521 of the second heater electrode 500B is electrically connected to the second driver electrode 60B via the second heater-side via portion 710B, and the second heater electrode 500B has the second heater electrode 500B. The heater pad portion 522 is electrically connected to the common driver electrode 60D through a heater side via portion (not shown). The first heater pad portion 521 of the third heater electrode 500C is electrically connected to the third driver electrode 60C via the third heater side via portion 710C, and the third heater electrode 500C The second heater pad portion 522 is electrically connected to the common driver electrode 60D via the fourth heater side via portion 710D. Each heater-side via portion 710 </ b> A to 710 </ b> D is formed of a conductive material, and includes, for example, a relay pad 711, an upper via 712, and a lower via 713. The relay pad 711 is a substantially flat conductive member, and is disposed at the boundary between the first organic layer 71 and the second ceramic member 11. The upper via 712 and the lower via 713 are rod-like conductive members extending in the vertical direction (Z-axis direction). The upper ends of the upper vias 712 are bonded to the lower surfaces of the heater pad portions 521 and 522 of the heater electrodes 500, and the lower ends of the upper vias 712 are bonded to the upper surfaces of the relay pads 711. The upper end of the lower via 713 is bonded to the lower surface of the relay pad 711, and the lower end of the lower via 713 is bonded to the upper surface of each driver electrode 60. The heater side via portions 710A to 710D correspond to the first conductive portion in the claims.

  As shown in FIG. 2, the electrostatic chuck 100 is formed with a plurality of terminal holes 110 extending from the lower surface S <b> 6 of the base member 20 to the lower surface S <b> 4 of the second ceramic member 11. In FIG. 2, among the plurality of terminal holes 110, four terminal holes 110 (hereinafter referred to as a first terminal hole 110A, a second terminal hole 110B, a third terminal hole 110C, and a fourth terminal hole 110). Only the terminal hole 110D) is shown, and the other terminal holes 110 are not shown. Each terminal hole 110 is an integral hole formed by a through hole 22 penetrating the base member 20 in the vertical direction and a through hole 32 penetrating the joint portion 30 in the vertical direction.

  Each terminal hole 110 accommodates a columnar power supply terminal 740. An electrode pad 720 is provided in a region exposed in each terminal hole 110 in the lower surface S4 of the second ceramic member 11. Each power supply terminal 740 is joined to the electrode pad 720 by brazing or the like, for example. Each electrode pad 720 is joined to each driver electrode 60 through a power supply side via 722. The electrode pad 720, the power supply side via 722, and the power supply terminal 740 are all formed of a conductive member. Further, each power supply side via 722 is arranged at a position different from any of the heater side via portions 710A to 710D when viewed in the vertical direction (Z-axis direction). Specifically, the first driver electrode 60A is electrically connected to the first power supply terminal 740A accommodated in the first terminal hole 110A through the first power supply side via 722A and the electrode pad 720. Yes. The second driver electrode 60B is electrically connected to the second power supply terminal 740B accommodated in the second terminal hole 110B through the second power supply side via 722B and the electrode pad 720. The third driver electrode 60C is electrically connected to the third power supply terminal 740C accommodated in the third terminal hole 110C via the third power supply side via 722C and the electrode pad 720. The common driver electrode 60D is electrically connected to the common power supply terminal 740D accommodated in the fourth terminal hole 110D through the fourth power supply side via 722D and the electrode pad 720. That is, the first heater pad portions 521 of the plurality of heater electrodes 500 are electrically connected to different power supply terminals 740 (740A to 740D), respectively, and the second heater pad portions of the plurality of heater electrodes 500 are connected. All of 522 are electrically connected in common to a common common power supply terminal 740D. The electrode pad 720 corresponds to a power supply unit in the claims, and the power supply side vias 722 (722A to 722D) correspond to a second conductive unit in the claims.

  Each plus side of a plurality of power supply circuits (not shown) is individually connected to power supply terminals 740 (740A to 740C) to which the first heater pad portions 521 of the plurality of heater electrodes 500 are electrically connected, respectively. The negative sides of the plurality of power supply circuits are connected to the power supply terminals (common power supply terminals 740D) to which the second heater pad portions 522 of the plurality of heater electrodes 500 are electrically connected, respectively. Thereby, the voltages from the plurality of power supply circuits are individually applied to the plurality of heater electrodes 500. When a voltage is applied to each heater electrode 500, each heater electrode 500 generates heat and the first ceramic member 10 is heated, thereby controlling the temperature distribution of the adsorption surface S1 of the first ceramic member 10 (that is, , Control of the temperature distribution of the wafer W held on the suction surface S1) is realized. Further, the amount of heat generated by each heater electrode 500 can be adjusted independently of each other in accordance with the voltage level from each power supply circuit.

A-3. Method for manufacturing electrostatic chuck 100:
FIG. 4 is a flowchart illustrating a method for manufacturing the electrostatic chuck 100 according to the present embodiment, and FIG. 5 is an explanatory diagram schematically illustrating a manufacturing process for the electrostatic chuck 100. First, the first ceramic member 10 and the intermediate bonded body 26 are prepared (S110, S120).

(Preparation process of the first ceramic member 10: S110)
The first ceramic member 10 can be manufactured by a known manufacturing method. For example, the first ceramic member 10 is manufactured by the following method. That is, a plurality of ceramic green sheets (for example, alumina green sheets) are prepared, and metallized ink for forming the chuck electrode 40 and the like is printed on each ceramic green sheet. Thereafter, a plurality of ceramic green sheets are laminated and thermocompression bonded, cut into a predetermined disc shape, fired at, for example, 1500 to 1600 ° C., and finally subjected to polishing or the like, whereby the first ceramic member 10 is obtained. Is manufactured (see FIG. 5A).

(Preparation process of intermediate joined body 26: S120)
The intermediate bonded body 26 is the remaining part of the electrostatic chuck 100 excluding the first ceramic member 10 and the second organic layer 72. Specifically, the base member 20, the second ceramic member 11, and a joint that is disposed between the base member 20 and the second ceramic member 11 and joins the base member 20 and the second ceramic member 11. Part 30, a first organic layer 71 disposed on the upper surface of second ceramic member 11, and a heater electrode 500 disposed on first organic layer 71 (see FIG. 5D). .

  First, the first organic layer 71 provided with the heater electrode 500 is prepared (see FIG. 5B). Specifically, a first organic layer 71 that is a resin film (thickness is, for example, 24 μm) containing a polyimide resin as a main component is prepared, and a thin film (thickness is, for example, 4 μm) metal sheet (metal foil) is bonded. In addition, an upper via 712 is formed in the first organic layer 71 by forming a through hole at a necessary position in the first organic layer 71 and filling the through hole with a conductor paste. In addition, a relay pad 711 is formed at the lower end of each upper via 712. Next, the metal sheet bonded onto the first organic layer 71 is exposed and developed (etched) by photolithography, for example. Of the metal sheet, a portion that becomes each heater electrode 500 is exposed, and the other portions are not exposed. Further, the unexposed portion is removed by development, and the exposed portion is left. Thereby, the heater electrode 500 is formed on the first organic layer 71. As described above, in the first organic layer 71 in which the heater electrode 500 is disposed, the heater electrode 500 is formed on the first organic layer 71 by etching a metal foil having a high thickness uniformity instead of a screen mask or the like. Therefore, it is possible to suppress the heat generation distribution due to the variation in the dimension of the heater electrode 500 and the thickness in the surface direction (that is, the cross-sectional area).

  In addition, a second ceramic member 11 is prepared (see FIG. 5B). The second ceramic member 11 can be manufactured by a known manufacturing method. For example, the second ceramic member 11 is manufactured by the following method. That is, a plurality of ceramic green sheets (for example, alumina green sheets) are prepared, and a hole forming process for configuring the driver electrode 60, the heater side via portions 710A to 710D, the power supply side vias 722, and the like on each ceramic green sheet. And printing of metallized ink. Thereafter, a plurality of ceramic green sheets are laminated, and a pad precursor that becomes the above-described relay pad 711 and electrode pad 720 after firing is formed on the sheet laminated body and thermocompression bonded, and then cut into a predetermined disk shape. For example, the second ceramic member 11 is manufactured by firing at 1500 to 1600 ° C. and finally performing polishing or the like.

  Next, the 1st organic layer 71 in which the heater electrode 500 was formed is adhere | attached on the upper surface S3 of the 2nd ceramic member 11 with an adhesive agent. Thereby, the joined body of the 1st organic layer 71 and the 2nd ceramic member 11 is produced (refer to Drawing 5 (C)). The adhesive is preferably a polyimide adhesive or a silicone adhesive in order to improve the bonding strength between the first organic layer 71 formed of polyimide resin and the second ceramic member 11.

  Moreover, the base member 20 is prepared. The base member 20 can be manufactured by a known manufacturing method. Then, the joined body of the first organic layer 71 and the second ceramic member 11 and the base member 20 are joined (FIG. 5D). Specifically, the lower surface S4 of the second ceramic member 11 and the base member. In the state which bonded the upper surface S5 of 20 through the adhesive agent, the junction part 30 is formed by performing the hardening process which hardens an adhesive agent. When the adhesive is disposed between the two, a hole corresponding to the terminal hole 110 described above is provided so that the through hole 32 is formed in the joint portion 30 formed by the adhesive curing process. The power supply terminal 740 is bonded to the electrode pad 720. Through the above steps, the manufacture of the intermediate bonded body 26 having the above-described configuration is completed.

(Temperature distribution measurement step: S130)
Next, in the state where electric power is supplied to the power supply terminal 740 (electrode pad 720) of the intermediate bonded body 26, the temperature distribution in the surface direction on the surface side where the heater electrode 500 is formed in the intermediate bonded body 26 is measured (S130). . At this time, it is preferable that the heater electrode 500 of the intermediate bonded body 26 is heated under use conditions in which the electrostatic chuck 100 is actually used. The temperature distribution can be measured using, for example, an infrared radiation thermometer or a wafer with a thermocouple.

(Additional process to heater electrode 500: S140)
Next, based on the measurement result of the temperature distribution of the intermediate bonded body 26, at least one of the plurality of heater electrodes 500 so that the temperature distribution of the intermediate bonded body 26 becomes a desired distribution (for example, the temperature in the surface direction is substantially uniform). Additional work is applied to. Specifically, when the measured temperature distribution of the intermediate joined body 26 is not a desired distribution, the heater electrode 500 is located in the vicinity of the temperature singularity in the heater electrode 500 in the vicinity of the desired distribution. Add additional work. For example, a process of increasing the resistance value of a portion of the heater electrode 500 that is located near a low temperature singularity with respect to a desired distribution is performed. For example, a notch or a groove is formed in a portion of the heater electrode 500 located near a low temperature singularity by trimming by laser light irradiation. Further, the heater electrode 500 is subjected to processing for reducing the resistance value of a portion located near a high temperature singularity with respect to a desired distribution. For example, a conductive material is plated or printed on a portion of the heater electrode 500 located near the high temperature singularity. By these additional processes, the temperature distribution in the intermediate bonded body 26 can be brought close to a desired distribution. After the additional work, the temperature distribution of the intermediate joined body 26 is measured again. As a result, if the temperature distribution of the intermediate joined body 26 is not yet the desired distribution, the intermediate joined body 26 is further subjected to additional work. It is preferable to repeat the application.

(Jointing step of first ceramic member 10 and intermediate joined body 26: S150)
The organic part 70 and the plurality of heater electrodes 500 are interposed between the upper surface S3 of the second ceramic member 11 and the lower surface S2 of the first ceramic member 10 in the intermediate bonded body 26 after the additional machining. The first ceramic member 10 is bonded to the intermediate bonded body 26. Specifically, a second organic layer 72 that is a resin film (thickness is, for example, 50 μm) mainly composed of a polyimide resin is prepared, and the second organic layer 72 is bonded to the intermediate bonded body 26 with an adhesive. It adheres on the first organic layer 71. Further, the first ceramic member 10 is bonded onto the second organic layer 72 bonded to the intermediate bonded body 26 with an adhesive. The adhesive is preferably a polyimide adhesive or a silicone adhesive. Thereby, the manufacture of the electrostatic chuck 100 is completed (see FIG. 2 and the like).

A-4. Effects of this embodiment:
As described above, the heater side via portions 710A to 710D that electrically connect at least one end of the plurality of heater electrodes 500 and the driver electrode 60, and the driver electrode 60 and the electrode pad 720 are electrically connected. The power supply side vias 722 are arranged at different positions in the first direction view. For this reason, generation | occurrence | production of the temperature singularity resulting from current concentration can be suppressed compared with the structure arrange | positioned in the position where heater side via part 710A-710D and electric power feeding side via 722 mutually correspond. Here, if the driver electrode 60 is to be disposed inside the organic part 70, for example, the following problem may occur. That is, by forming the driver electrode 60, the organic portion 70 having a relatively low thermal conductivity becomes thick, and accordingly, the first ceramic is caused by a decrease in temperature responsiveness of the electrostatic chuck 100. The controllability of the temperature distribution on the suction surface S1 of the member 10 (and hence the controllability of the wafer temperature distribution) is lowered. Further, if the thickness of the organic portion 70 is to be suppressed, the unevenness due to the thickness of the driver electrode 60 cannot be absorbed, and the organic portion 70 is likely to contain bubbles, the thermal conductivity of the organic portion 70 is further deteriorated, and Temperature singularities are also generated. For this reason, it is necessary to make the driver electrode 60 thin. However, as a result, the resistance value of the driver electrode 60 increases, and as a result, the driver electrode 60 generates heat, and the temperature distribution of the adsorption surface S1 of the first ceramic member 10 increases. Reduce controllability. On the other hand, according to the present embodiment, the driver electrode 60 that electrically connects the heater side via portions 710 </ b> A to 710 </ b> D and the power supply side via 722 is not the organic portion 70 but the inside of the second ceramic member 11. Is arranged. Thereby, compared with the structure which arrange | positions the driver electrode 60 inside the 2nd ceramic member 11, the controllability of the temperature distribution of the adsorption | suction surface S1 of the 1st ceramic member 10 (as a result, the controllability of the temperature distribution of a wafer). Can be suppressed.

  Conventionally, there is a technique for adjusting the resistance value of the heater electrode by trimming the heater electrode disposed on the surface opposite to the adsorption surface of the ceramic member, and then joining the base member to the ceramic member. Are known. However, in the conventional technique, even if the temperature distribution of the adsorption surface of the ceramic member can be controlled to a desired distribution by trimming the heater electrode, the ceramic member is adsorbed by bonding the base member to the ceramic member. The temperature distribution on the surface may change. For example, the temperature of the adsorption surface of the ceramic member due to variations in the thickness of the joint between the ceramic member and the base member or the difference in the endothermic effect between the portion where the refrigerant flow path exists and the portion where the refrigerant flow path does not exist This is because the distribution changes. Therefore, in the conventional technique, there is room for improvement in terms of controllability of the temperature distribution on the adsorption surface of the ceramic member (and hence controllability of the temperature distribution of the wafer).

  On the other hand, according to the method for manufacturing the electrostatic chuck 100 of the present embodiment, the temperature distribution in the surface direction of the intermediate bonded body 26 is measured. Here, the heater electrode 500 (that is, polyimide heater) disposed in the organic portion 70 has a variation in heat generation distribution corresponding to a smaller variation in cross-sectional area than the ceramic heater in which the heater electrode is disposed in the ceramic member. Is unlikely to occur. However, as described above, the intermediate bonded body 26 is obtained by bonding the base member 20 to the second ceramic member 11 via the bonding portion 30 (FIG. 5D). For this reason, by bonding the base member 20 to the second ceramic member 11, the temperature distribution of the intermediate bonded body 26 varies by the variation of the bonded portion 30 and the base member 20. In contrast, in the intermediate bonded body 26, the heater electrode 500 is disposed on the surface of the first organic layer 71, and the heater electrode 500 can be processed. Therefore, based on the measurement result of the temperature distribution of the intermediate bonded body 26, at least one of the plurality of heater electrodes 500 can be processed so that the temperature distribution of the intermediate bonded body 26 becomes a desired distribution. Thereby, the controllability of the temperature distribution of the adsorption surface S1 of the first ceramic member 10 due to the temperature distribution variation caused by joining the base member 20 to the second ceramic member 11 (and thus the temperature distribution of the wafer). Decrease in controllability) can be suppressed.

  Further, assuming that the ceramic portion of the second ceramic member 11 is not interposed between the first organic layer 71 on which the heater electrode 500 is disposed and the driver electrode 60, laser light is applied to the heater electrode 500. When trimming is performed by irradiation, the laser beam may penetrate not only the heater electrode 500 but also the first organic layer 71 and damage the driver electrode 60 and the like, thereby causing disconnection and the like. On the other hand, in the present embodiment, the ceramic portion of the second ceramic member 11 is interposed between the first organic layer 71 on which the heater electrode 500 is disposed and the driver electrode 60. Damage is suppressed.

B. Variations:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the gist thereof. For example, the following modifications are possible.

  The configuration of the electrostatic chuck 100 in the above embodiment is merely an example, and various modifications can be made. For example, a part of the heater electrode 500 may be in contact with the lower surface S2 of the first ceramic member 10 or the upper surface S3 of the second ceramic member 11. In the above embodiment, the first organic layer 71 and the second organic layer 72 may be composed mainly of different organic materials. In addition to the polyimide resin, the organic material may be, for example, polytetrafluoroethylene, polyether ether ketone, polyphenylene sulfide, or the like. In the above embodiment, the combinations of all the heater side via portions (heater side via portions 710 </ b> A to 710 </ b> D) and the power supply side via 722 are arranged at different positions in the vertical direction (Z-axis direction) view. However, the effects of the present invention can be obtained if at least some of the combinations are arranged at different positions in the vertical direction.

  The method for manufacturing the electrostatic chuck 100 in the above embodiment is merely an example, and various modifications can be made. For example, the temperature distribution measurement (S130) and the additional processing (S140) may be performed on the intermediate bonded body 26 in a state before the power supply terminal 740 is bonded. However, the temperature distribution of the intermediate bonded body 26 (electrostatic chuck 100) can be changed before and after the feeding terminal 740 is bonded. For this reason, it is preferable to perform the temperature distribution measurement (S130) and the additional work (S140) for the intermediate joined body 26 to which the power supply terminal 740 has been joined as in the above embodiment.

  In the above embodiment, each via may be configured by a single via or a group of a plurality of vias. Further, in the above embodiment, each via may have a single layer configuration including only a via portion, or a multiple layer configuration (for example, a configuration in which a via portion, a pad portion, and a via portion are stacked). Also good.

  In the above-described embodiment, a single-pole system in which one chuck electrode 40 is provided inside the first ceramic member 10 is employed. However, a pair of chuck electrodes 40 are provided inside the first ceramic member 10. A provided bipolar system may be employed. Moreover, the material which forms each member in the electrostatic chuck 100 of the said embodiment is an illustration to the last, and each member may be formed with another material.

  In addition, the present invention is not limited to the electrostatic chuck 100 that holds the wafer W using electrostatic attraction, but is disposed between the first ceramic member, the second ceramic member, and both ceramic members. Other holding devices (for example, a heater device such as a CVD heater, a vacuum chuck, etc.) that include an organic portion in which a heater electrode is disposed and a base member and hold an object on the surface of the first ceramic plate Applicable.

DESCRIPTION OF SYMBOLS 10: 1st ceramic member 11: 2nd ceramic member 20: Base member 21: Refrigerant flow path 22: Through-hole 26: Intermediate joined body 30: Joining part 32: Through-hole 40: Chuck electrode 50: Heater electrode layer 60 : Driver electrode 60A: first driver electrode 60B: second driver electrode 60C: third driver electrode 60D: common driver electrode 70: organic part 71: first organic layer 72: second organic layer 100: static Electric chuck 110: terminal hole 110A: first terminal hole 110B: second terminal hole 110C: third terminal hole 110D: fourth terminal hole 500: heater electrode 500A: first heater electrode 500B: second heater electrode 500C: third heater electrode 510: heater line portion 521: first heater pad portion 52 : Second heater pad portion 710A: first heater side via portion 710B: second heater side via portion 710C: third heater side via portion 710D: fourth heater side via portion 711: relay pad 712: upper side Via 713: Lower via 720: Electrode pad 722: Feed via 722A: First feed via 722B: Second feed via 722C: Third feed via 722D: Fourth feed via 740: Feed Terminal 740A: First feeding terminal 740B: Second feeding terminal 740C: Third feeding terminal 740D: Common feeding terminal S1: Adsorption surface S2: Lower surface S3: Upper surface S4: Lower surface S5: Upper surface S6: Lower surface W6: Wafer

Claims (2)

A first ceramic member having a first surface and a second surface opposite to the first surface;
A third surface and a fourth surface opposite to the third surface, wherein the third surface is arranged to face the second surface of the first ceramic member; A second ceramic member;
An organic part mainly composed of an organic material, disposed between the second surface of the first ceramic member and the third surface of the second ceramic member;
A plurality of heater electrodes disposed in the organic portion;
A refrigerant flow path is formed while having a fifth surface and a sixth surface opposite to the fifth surface, and the fifth surface is formed on the fourth surface of the second ceramic member. A joined base member;
A power feeding unit disposed on the fourth surface side of the second ceramic member;
A holding device for holding an object on the first surface of the first ceramic member,
Further, a driver electrode disposed inside the second ceramic member,
A first conductive portion that electrically connects at least one end of the plurality of heater electrodes and the driver electrode;
A second conductive portion disposed at a position different from the first conductive portion in a first direction view substantially perpendicular to the first surface, and electrically connecting the driver electrode and the power feeding portion; Comprising
A holding device. In a manufacturing method of a holding device having a first surface and holding an object on the first surface,
Providing a first ceramic member having the first surface and a second surface opposite to the first surface;
A step of preparing an intermediate joined body, wherein the intermediate joined body comprises:
A second ceramic member having a third surface and a fourth surface opposite to the third surface;
A refrigerant flow path is formed while having a fifth surface and a sixth surface opposite to the fifth surface, and the fifth surface is formed on the fourth surface of the second ceramic member. A joined base member;
A power feeding unit disposed on the fourth surface side of the second ceramic member;
An organic portion that is disposed on the third surface of the second ceramic member and has an organic material as a main component;
A plurality of heater electrodes disposed on the surface of the organic portion opposite to the second ceramic member;
A driver electrode disposed inside the second ceramic member;
A first conductive portion that electrically connects at least one end of the plurality of heater electrodes and the driver electrode;
A second conductive portion disposed at a position different from the first conductive portion in a first direction view substantially perpendicular to the third surface, and electrically connecting the driver electrode and the power feeding portion; A process comprising:
A step of measuring a temperature distribution in a plane direction substantially parallel to the third surface of the intermediate joined body in a state where electric power is supplied to the power feeding portion of the intermediate joined body;
A step of processing at least one of the plurality of heater electrodes based on the measurement result of the temperature distribution of the intermediate bonded body so that the temperature distribution of the intermediate bonded body becomes a desired distribution;
The organic portion and the plurality of heater electrodes are interposed between the third surface of the second ceramic member and the second surface of the first ceramic member in the intermediate bonded body after processing. A step of bonding the first ceramic member to the intermediate bonded body,
The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.

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