JP2016100474A - Electrostatic chuck and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-quality electrostatic chuck that can suppress temperature variation of the support surface of a main body board for supporting a processing target object.SOLUTION: An electrostatic chuck 1 has a metal base 12 having a front surface 121 and a back surface 122, a main body board 11 which is disposed at the surface 121 side of the metal base 12, has a support face 111 for supporting a semiconductor wafer (processing target object) 8 and is formed of ceramic, a suction electrode 21 that is provided to the main body board 11 and sucks the semiconductor wafer (processing target object) 8, and a heater part 13 disposed between the metal base 12 and the main body board 11. The heater part 13 has an organic layer 131 formed of organic material, and a heater electrode 41 which is provided on the organic layer 131 and at the metal base 12 side.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an electrostatic chuck and a manufacturing method thereof.

  Conventionally, in a semiconductor manufacturing apparatus, processing such as dry etching (for example, plasma etching) is performed on a semiconductor wafer (for example, a silicon wafer). In order to increase processing accuracy such as dry etching, it is necessary to securely support the semiconductor wafer. An electrostatic chuck is known as means for supporting a semiconductor wafer.

  The electrostatic chuck includes a main body substrate made of ceramic, an adsorption electrode provided on the main body substrate, and the like. The electrostatic chuck attracts and supports the semiconductor wafer on the upper surface (support surface) of the main body substrate using electrostatic attraction generated when a voltage is applied to the attracting electrode.

  By the way, when the temperature of the semiconductor wafer adsorbed and supported on the support surface of the main substrate varies, the processing accuracy decreases. In order to increase the processing accuracy, it is required to reduce the temperature variation of the support surface of the main body substrate that sucks and supports the semiconductor wafer. For example, Patent Document 1 discloses an electrostatic chuck provided with a heater electrode (heating element) inside a main body substrate.

JP 2004-71647 A

  However, the electrostatic chuck disclosed in Patent Document 1 has the following problems. That is, the heater electrode is produced by forming a heating element material (metal paste) into a desired pattern (pattern formation) by screen printing. In the case of screen printing, variations in the thickness and width of the patterned heating element material occur due to printing bleeding, mesh marks due to the screen mask, and the like. For this reason, variations occur in the thickness and width of the heater electrode after firing, and it becomes difficult to heat the heater electrode uniformly. As a result, temperature variations occur on the support surface of the main body substrate that supports the semiconductor wafer by suction.

  The main body substrate and the heater electrode are formed by simultaneous firing. For this reason, the distance (thermal conductivity) between the support surface of the main body substrate and the heater electrode varies due to warpage or uneven burning of the main body substrate during firing. As a result, temperature variations occur on the support surface of the main body substrate that supports the semiconductor wafer by suction.

  The present invention has been made in view of such a background, and an object of the present invention is to provide a high-quality electrostatic chuck and a method for manufacturing the same that can suppress temperature variation of the support surface of the main body substrate that supports the object to be processed. is there.

  One embodiment of the present invention includes a metal base having a front surface and a back surface, a main body substrate that is disposed on the front surface side of the metal base and has a support surface that supports an object to be processed, and is made of ceramic. An adsorption electrode for adsorbing the object to be processed, and a heater part disposed between the metal base and the main body substrate, the heater part being an organic layer made of an organic material And a heater electrode provided on the organic layer and on the metal base side.

  The electrostatic chuck is provided with a heater portion between the metal base and the main body substrate. The heater part has an organic layer and a heater electrode. The heater electrode is provided on the organic layer and on the metal base side. Therefore, for example, a heater electrode can be formed on the organic layer using a method such as photolithography. And compared with the case where the method of the conventional screen printing etc. is used, the dispersion | variation in the thickness and width | variety of a heater electrode can be suppressed, and heat_generation | fever of a heater electrode can be performed uniformly. Thereby, the temperature dispersion | variation in the support surface of the main body substrate which supports to-be-processed objects, such as a semiconductor wafer, can be suppressed. As a result, for example, the processing accuracy of a workpiece such as a semiconductor wafer can be increased.

  Further, the heater electrode is provided not on the main body substrate but on a heater section different from the main body substrate. That is, the main body substrate and the heater electrode are formed separately. Therefore, for example, compared with the case where the main body substrate and the heater electrode are formed by simultaneous firing, the thickness of the main body substrate is reduced, warpage and uneven burning of the main body substrate during firing can be suppressed, and the yield can be improved. it can. Thereby, the dispersion | variation in the distance (thermal conductivity) between the support surface of a main body board | substrate and a heater electrode can be suppressed, and the temperature dispersion | variation in the support surface of a main body board | substrate can also be suppressed. In addition, quality can be improved.

  Further, for example, unlike the case where the main body substrate and the heater electrode are formed by simultaneous firing, the main body substrate and the heater electrode are formed separately. Therefore, the performance (conductivity etc.) of a heater electrode can be confirmed in the stage which formed the heater electrode. Thereby, a yield can be improved and quality can be improved.

  According to another aspect of the present invention, there is provided a metal base having a front surface and a back surface, a main body substrate which is disposed on the front surface side of the metal base and has a support surface for supporting an object to be processed, and is made of ceramic. In the method of manufacturing an electrostatic chuck, the heater unit, comprising: an adsorption electrode for adsorbing the object to be processed; and a heater unit disposed between the metal base and the main body substrate. In manufacturing the electrostatic chuck, the method includes the step of exposing and developing a metal conductor on an organic layer made of an organic material, and forming a heater electrode on the organic layer. .

  The manufacturing method of the electrostatic chuck includes an exposure and development step of exposing and developing a metal conductor on an organic layer made of an organic material and forming a heater electrode on the organic layer when the heater portion is manufactured. That is, the heater electrode can be formed on the organic layer using photolithography. Thereby, the above-mentioned electrostatic chuck, that is, a high-quality electrostatic chuck that can suppress the temperature variation of the support surface of the main body substrate that supports the workpiece such as a semiconductor wafer can be obtained.

  As described above, according to the present invention, by providing the heater portion (organic layer, heater electrode) between the main body substrate and the metal base, temperature variation of the support surface of the main body substrate that supports the object to be processed can be suppressed. It is possible to provide a high-quality electrostatic chuck and a manufacturing method thereof.

  In the electrostatic chuck, a ceramic layer made of ceramic may be disposed between the metal base and the heater unit. In this case, warpage of the entire electrostatic chuck can be suppressed. In addition, it is easy to align the main body substrate and the heater unit with the metal base.

  In addition, the heater unit may be configured by laminating a plurality of the organic layers provided with the heater electrodes. In this case, a plurality of heater electrodes can be easily provided in the heater section. For example, a heater electrode serving as a main heater (main heater) and a heater electrode serving as an adjustment heater can be easily provided in the heater section.

  The main body substrate is configured to be capable of adsorbing an object to be processed using an electrostatic attraction generated when a voltage is applied to an adsorption electrode provided on the main body substrate. Examples of the object to be processed include a semiconductor wafer and a glass substrate.

  The main body substrate can be composed of, for example, a plurality of laminated ceramic layers. With this configuration, for example, various structures (for example, an adsorption electrode) can be easily formed inside the main body substrate.

  As the ceramic material constituting the main body substrate, for example, a sintered body mainly composed of alumina, yttria (yttrium oxide), aluminum nitride, silicon carbide, or the like can be used.

  The material of the conductor constituting the adsorption electrode is not particularly limited, but when forming these conductor and ceramic portion (main body substrate) by the simultaneous firing method, the metal powder in the conductor is more than the firing temperature of the main body substrate. Need to have a high melting point. As the metal powder in the conductor, for example, tungsten (W), molybdenum (Mo), and alloys thereof can be used.

  As a metal material constituting the metal base, titanium (Ti), copper (Cu), aluminum (Al), an alloy thereof, or the like can be used. Further, the metal base may be provided with a refrigerant flow path for circulating the cooling medium.

As a material constituting the organic layer of the heater section, for example, polyimide resin, polyethylene naphthalate resin, or the like can be used.
For example, copper (Cu), gold (Au), platinum (Pt), tungsten (W), molybdenum (Mo), or the like can be used as a material for the conductor constituting the heater electrode of the heater section.

  The heater unit can be bonded (adhered) to the main body substrate, the metal base, and the ceramic layer using, for example, a resin adhesive film. In particular, the surface of the heater portion where the heater electrode is exposed is applied to the main body substrate and the ceramic layer made of ceramic by using a method such as diffusion bonding in addition to a resin adhesive film, for example. Can be joined.

  In the electrostatic chuck manufacturing method, in the exposure and development step, a metal conductor on an organic layer made of an organic material is exposed and developed. Specifically, a photosensitive resin layer is formed on the metal conductor (film pasting or paste coating), and a pattern is formed on the metal conductor by exposure and development. In this case, the metal conductor may be applied onto the organic layer by a method such as screen printing, or the sheet-like thin film metal conductor may be adhered onto the organic layer. Further, a metal conductor may be plated on the organic layer.

FIG. 3 is an explanatory cross-sectional view showing the structure of the electrostatic chuck according to the first embodiment. It is sectional explanatory drawing to which a part of electrostatic chuck was expanded. (A) is a top view which shows a 1st heater electrode, (B) is a top view which shows a 2nd heater electrode. (A) is sectional explanatory drawing which shows the state which adhere | attached the metal sheet on the resin layer, (B) is sectional explanatory drawing which expands and shows a resin layer and a metal sheet, (C) is on a resin layer. It is a section explanatory view showing the state where the 1st heater electrode was formed. (A) is sectional explanatory drawing which shows the state which laminates | stacks two resin layers, (B) is sectional explanatory drawing which shows the state which laminates | stacks two resin layers and crimps | bonds them. (A) is sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate, a heater part, a ceramic layer, etc. (B) is sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate, a heater part, a ceramic layer, etc. It is. (A) is sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate and a heater part, (B) is sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate and a heater part, and is crimped | bonded. (A) is sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate and a heater part, and a ceramic layer, (B) is sectional explanatory drawing which shows the state which carries out the diffusion bonding of a heater part and a ceramic layer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
As shown in FIGS. 1 to 3, the electrostatic chuck 1 of the present embodiment is disposed on the metal base 12 having the front surface 121 and the back surface 122, and on the front surface 121 side of the metal base 12, and is a semiconductor wafer (object to be processed). 8, a main body substrate 11 made of ceramic, an adsorption electrode 21 provided on the main body substrate 11 for adsorbing a semiconductor wafer (object to be processed) 8, a metal base 12, and a main body And a heater unit 13 disposed between the substrate 11 and the substrate 11. The heater unit 13 includes an organic layer 131 made of an organic material, and heater electrodes 41 (41a and 41b) provided on the organic layer 131 and on the metal base 12 side. Hereinafter, the details of the electrostatic chuck 1 will be described.

  As shown in FIGS. 1 and 2, the electrostatic chuck 1 is a device that sucks and supports a semiconductor wafer 8 that is an object to be processed. The electrostatic chuck 1 includes a main body substrate 11, a metal base 12, a heater unit 13, and the like.

  In the present embodiment, the main body substrate 11 side is the upper side, and the metal base 12 side is the lower side. The vertical direction is a stacking direction of the main body substrate 11 and the metal base 12, and is a thickness direction of the main body substrate 11 and the metal base 12. The direction orthogonal to the vertical direction (thickness direction) is a direction (planar direction, plane direction) in which the electrostatic chuck 1 spreads in a plane.

  As shown in the figure, the main body substrate 11 is a member that supports the semiconductor wafer 8 by suction. The main body substrate 11 has a front surface (support surface) 111 and a back surface 112, and is formed in a disk shape. The surface (support surface) 111 of the main body substrate 11 is a surface that sucks and supports the semiconductor wafer 8. The main body substrate 11 is configured by laminating a plurality of ceramic layers (not shown). Each ceramic layer is made of an alumina sintered body containing alumina as a main component.

  An adsorption electrode 21 is disposed inside the main body substrate 11. The adsorption electrode 21 is disposed on substantially the same plane inside the main body substrate 11. The adsorption electrode 21 is formed in a circular shape in plan view. The adsorption electrode 21 generates an electrostatic attractive force by applying a DC high voltage. By this electrostatic attraction, the semiconductor wafer 8 is attracted and supported on the surface (support surface) 111 of the main body substrate 11. The adsorption electrode 21 is made of tungsten.

  The heater unit 13 is disposed between the main body substrate 11 and the metal base 12. The heater unit 13 is configured by laminating two organic layers 131. The two organic layers 131 are resin films made of polyimide resin. On the other (upper) organic layer 131, a heater electrode 41 (first heater electrode 41a) is provided. On the other (lower) organic layer 131, a heater electrode 41 (second heater electrode 41b) is provided. The heater electrode 41 (41a, 41b) is provided on the organic layer 131 and on the metal base 12 side (lower side). The heater electrode 41 (41a, 41b) is made of copper.

  As shown in FIGS. 3A and 3B, the first heater electrode 41a and the second heater electrode 41b are long heating elements. The first heater electrode 41a and the second heater electrode 41b are folded back many times on the one (upper side) and the other (lower side) organic layer 131 and are arranged substantially concentrically.

  As shown in FIGS. 1 and 2, the heater unit 13 and the main body substrate 11 are bonded to each other via an adhesive layer 141 disposed therebetween. Moreover, the heater part 13 and the ceramic layer 15 mentioned later are joined via the contact bonding layer 141 arrange | positioned between both. The adhesive layer 141 is an adhesive film made of polyimide resin or epoxy resin.

  A ceramic layer 15 made of ceramic is disposed between the heater unit 13 and the metal base 12. The ceramic layer 15 is configured by laminating a plurality of ceramic layers (not shown), like the main substrate 11. Each ceramic layer is made of an alumina sintered body containing alumina as a main component. Moreover, the ceramic layer 15 and the metal base 12 are joined via the joining layer 16 arrange | positioned between both. The bonding layer 16 is made of a flexible silicone resin adhesive that relieves the thermal expansion difference between the ceramic layer 15 made of ceramic and the metal base 12.

  A via 22 is connected to the adsorption electrode 21. The via 22 is formed in the vertical direction from the adsorption electrode 21 to the back surface (lower surface) of the ceramic layer 15. The via 22 is connected to a metallized layer 23 provided on the back surface of the ceramic layer 15.

  A via 421 is connected to the first heater electrode 41a (terminal portions 411 and 412 (see FIG. 3A)). A via 422 is connected to the second heater electrode 41b (terminal portions 411 and 412 (see FIG. 3B)). The vias 421 and 422 are formed in the vertical direction from the first heater electrode 41a and the second heater electrode 41b to the back surface (lower surface) of the ceramic layer 15, respectively. The vias 421 and 422 are respectively connected to metallized layers 431 and 432 provided on the back surface of the ceramic layer 15.

  The metal base 12 is a metal cooling member (cooling plate) made of aluminum or an aluminum alloy. The metal base 12 has a front surface 121 and a back surface 122 and is formed in a disk shape. The metal base 12 is disposed below the main body substrate 11.

  Inside the metal base 12, a coolant channel 123 is provided for circulating a cooling medium (for example, a fluorinated liquid, pure water, etc.). The coolant channel 123 is disposed on substantially the same plane inside the metal base 12. The refrigerant flow path 123 is formed in a spiral shape in plan view. The refrigerant channel 123 is configured to introduce a cooling medium from one end thereof and to discharge the cooling medium from the other end.

  In addition, three internal holes 31 to 33 are formed in the metal base 12 so as to penetrate the front surface 121 and the back surface 122. A cylindrical insulating member 311 is fitted in the internal hole 31. A connection terminal 312 is provided on the metallized layer 23 in the internal hole 31. A terminal fitting 313 is attached to the connection terminal 312. The terminal fitting 313 is connected to a power supply circuit (not shown). The suction electrode 21 is supplied with electric power for generating an electrostatic attractive force via the connection terminal 312 or the like.

  A cylindrical insulating member 321 is fitted in the internal hole 32. A connection terminal 322 is provided on the metallized layer 431 in the internal hole 32. A terminal fitting 323 is attached to the connection terminal 322. The terminal fitting 323 is connected to a power supply circuit (not shown). Electric power for heating the first heater electrode 41a is supplied to the first heater electrode 41a via the connection terminal 322 and the like.

  A cylindrical insulating member 331 is fitted in the internal hole 33. A connection terminal 332 is provided on the metallized layer 432 in the internal hole 33. A terminal fitting 333 is attached to the connection terminal 332. The terminal fitting 333 is connected to a power supply circuit (not shown). The second heater electrode 41b is supplied with electric power for causing the second heater electrode 41b to generate heat through the connection terminal 332 and the like.

  The 1st heater electrode 41a and the 2nd heater electrode 41b are comprised so that it can control independently independently. In the present embodiment, the first heater electrode 41a is used as a main heater (main heater), and the second heater electrode 41b is used as an adjustment heater.

  Although not shown, a cooling gas supply path serving as a supply path for a cooling gas such as helium for cooling the semiconductor wafer 8 is provided inside the electrostatic chuck 1. A plurality of cooling openings (not shown) formed by opening cooling gas supply passages and cooling gas supplied from the cooling openings are formed on the substrate surface (support surface) 111 of the main body substrate 11. An annular cooling groove (not shown) formed so as to spread over the entire surface (support surface) 111 of the main body substrate 11 is provided.

Next, a method for manufacturing the electrostatic chuck 1 of this embodiment will be described.
As shown in FIGS. 4 to 6, in the method of manufacturing the electrostatic chuck 1 of the present embodiment, when the heater unit 13 is manufactured, the metal sheet (metal conductor) 400 on the organic layer 131 made of an organic material is exposed. And an exposure development step of developing and forming the heater electrode 41 on the organic layer 131. Hereinafter, the details of the manufacturing method of the electrostatic chuck 1 will be described.

  First, the main body substrate 11 is produced. Specifically, a plurality of green sheets mainly composed of alumina are produced by a conventionally known method. Then, a through hole or the like that becomes the via 22 is formed in a necessary portion with respect to a predetermined green sheet. Thereafter, a conductor paste is filled into the through hole. Further, a conductor paste is applied to a predetermined green sheet by screen printing at a position where the adsorption electrode 21 is formed.

  Next, a plurality of green sheets are aligned with each other, stacked, and thermocompression bonded to obtain a stacked body. The laminate is cut into a predetermined shape. Then, the laminate is fired in a reducing atmosphere at a temperature of 1400 to 1600 ° C. to obtain the main body substrate 11 provided with the adsorption electrode 21, the via 22, and the like.

  Moreover, the ceramic layer 15 is produced. Specifically, a plurality of green sheets mainly composed of alumina are produced by a conventionally known method. Then, through holes or the like to be vias 421 and 422 are formed in a necessary portion with respect to a predetermined green sheet. Thereafter, a conductor paste is filled into the through hole. Further, a conductor paste is applied to a predetermined green sheet by screen printing at positions where the metallized layers 23, 431, and 432 are formed.

  Next, a plurality of green sheets are aligned with each other, stacked, and thermocompression bonded to obtain a stacked body. The laminate is cut into a predetermined shape. Then, the multilayer body is fired in a reducing atmosphere at a temperature of 1400 to 1600 ° C. to obtain a ceramic layer 15 provided with vias 421 and 422, metallized layers 23, 431, and 432.

  Moreover, the heater part 13 is produced. Specifically, as shown in FIG. 4A, a thin metal sheet (thickness of about 4 μm) is adhered to an organic layer 131 that is a resin film (thickness of about 24 μm) made of polyimide resin. Then, a through hole to be the via 22 is formed at a necessary place. Thereafter, a conductor paste (silver paste) is filled in the through hole. Thereby, the via 22 is formed.

  As shown in FIG. 4B, the organic layer 131 includes a thermosetting polyimide layer 131a having a thickness of about 20 μm and a pair of thermoplastic polyimide layers 131b having a thickness of about 2 μm disposed above and below the layer. .

  Next, as shown in FIG. 4C, the metal sheet 400 on the organic layer 131 is exposed and developed by photolithography. At this time, the portion to be the first heater electrode 41a is exposed, and the other portions are not exposed. Further, the unexposed part is removed in the development, and the exposed part is left. Thereby, the first heater electrode 41 a is formed on the organic layer 131.

  Further, in the same procedure, the second heater electrode 41b is formed on the other organic layer 131 by photolithography. Vias 22 and 421 are formed in the organic layer 131 (see FIG. 5A described later).

  Next, as shown in FIG. 5A, the organic layer 131 provided with the first heater electrode 41a and the organic layer 131 provided with the second heater electrode 41b are overlapped. Then, as shown in FIG. 5B, pressure bonding is performed in a state where the two organic layers 131 are stacked. Thereby, the heater part 13 provided with the first heater electrode 41a and the second heater electrode 41b is obtained. Then, the performance (conductivity etc.) of the 1st heater electrode 41a and the 2nd heater electrode 41b is confirmed.

  Next, as shown in FIG. 6A, the main body substrate 11, the adhesive layer 141, the heater portion 13, the adhesive layer 141, and the ceramic layer 15 are sequentially stacked. Note that vias 22, 421, and 422 are formed in the ceramic layer 15 and the two adhesive layers 141. And as shown in FIG.6 (B), these are crimped | bonded in the state heated to predetermined temperature in the vacuum, and an intermediate body is obtained. Thereafter, the intermediate body and the metal base 12 are bonded (adhered) with an adhesive (bonding layer 16) made of silicone resin. Thus, the electrostatic chuck 1 is obtained.

Next, the effects of the electrostatic chuck 1 and the manufacturing method thereof according to the present embodiment will be described.
In the electrostatic chuck 1 of the present embodiment, a heater unit 13 is provided between the metal base 12 and the main body substrate 11. The heater unit 13 includes an organic layer 131 and heater electrodes 41 (41a, 41b). The heater electrode 41 (41a, 41b) is provided on the organic layer 131 and on the metal base 12 side. Therefore, the heater electrode 41 (41a, 41b) can be formed on the organic layer 131 using photolithography as in this embodiment. And compared with the case where methods, such as the conventional screen printing, are used, the dispersion | variation in the thickness and width | variety of the heater electrode 41 (41a, 41b) can be suppressed. Thereby, the temperature dispersion | variation in the support surface 111 of the main body board | substrate 11 which supports the semiconductor wafer 8 can be suppressed. As a result, for example, the processing accuracy of the semiconductor wafer 8 can be increased.

  Further, the heater electrode 41 (41 a, 41 b) is provided not in the main body substrate 11 but in the heater section 13 different from the main body substrate 11. That is, the main body substrate 11 and the heater electrodes 41 (41a, 41b) are formed separately. Therefore, for example, as compared with the case where the main body substrate 11 and the heater electrode 41 (41a, 41b) are formed by simultaneous firing, warpage and uneven burning of the main body substrate 11 during firing can be suppressed, and the yield can be improved. it can. Thereby, the dispersion | variation in the distance (thermal conductivity) between the support surface 111 of the main body board | substrate 11 and the heater electrode 41 (41a, 41b) can be suppressed, and the temperature dispersion | variation in the support surface 111 of the main body board | substrate 11 can also be suppressed. In addition, quality can be improved.

  Further, for example, unlike the case where the main body substrate 11 and the heater electrode 41 (41a, 41b) are formed by simultaneous firing, the main body substrate 11 and the heater electrode 41 (41a, 41b) are formed separately. Therefore, the performance (conductivity etc.) of the heater electrode 41 (41a, 41b) can be confirmed at the stage where the heater electrode 41 (41a, 41b) is formed. Thereby, a yield can be improved and quality can be improved.

  In the present embodiment, a ceramic layer 15 made of ceramic is disposed between the metal base 12 and the heater unit 13. Therefore, warpage of the entire electrostatic chuck 1 can be suppressed. Further, alignment of the main body substrate 11 and the heater unit 13 with the metal base 12 is facilitated.

  The heater unit 13 is formed by laminating a plurality of organic layers 131 provided with heater electrodes 41 (41a, 41b). Therefore, the heater part 13 can be easily provided with a plurality of heater electrodes 41 (41a, 41b). For example, the heater unit 13 can be easily provided with a heater electrode 41 (41a) serving as a main heater (main heater) and a heater electrode 41 (41b) serving as an adjustment heater.

  Further, in the manufacturing method of the electrostatic chuck 1 of the present embodiment, when the heater unit 13 is manufactured, the metal sheet 400 on the organic layer 131 made of an organic material is exposed and developed, and the heater electrode 41 ( 41a and 41b). That is, the heater electrode 41 (41a, 41b) can be formed on the organic layer 131 using photolithography. As a result, a high-quality electrostatic chuck 1 that can suppress temperature variations of the support surface 111 of the main body substrate 11 that supports the semiconductor wafer 8 is obtained.

  Thus, according to the present embodiment, it is possible to provide a high-quality electrostatic chuck 1 that can suppress temperature variations of the support surface 111 of the main body substrate 11 that supports the semiconductor wafer (object to be processed) 8.

(Embodiment 2)
As shown in FIGS. 7 and 8, the present embodiment is an example in which the process of joining the main body substrate 11, the heater unit 13, and the ceramic layer 15 is changed in the method for manufacturing the electrostatic chuck 1 of the first embodiment. In addition, description is abbreviate | omitted about the structure and effect similar to Embodiment 1. FIG.

  As shown in FIG. 7A, the main body substrate 11 and the heater unit 13 are overlapped. In the heater unit 13, the via 22 and the via 421 are formed to the same height as the second heater electrode 41b. Then, as shown in FIG. 7B, the main body substrate 11 and the heater unit 13 are pressure-bonded in a state of being heated to a predetermined temperature in a vacuum.

  Next, as shown in FIG. 8A, a plating film 401 is formed on the surface of the second heater electrode 41b. A plating film 401 is also formed on the surfaces of the via 22 and the via 421 of the heater unit 13. Further, a joining portion 402 made of solder or the like is formed at a predetermined position of the ceramic layer 15 (a position corresponding to the plating film 401 formed on the heater portion 13). The bonding portion 402 is formed using a method such as photolithography, inkjet, or dispenser. Note that the via 22 and the via 421 of the ceramic layer 15 are formed to the same height as the joint 402. And the main body board | substrate 11, the heater part 13, and the ceramic layer 15 are piled up.

  Next, as shown in FIG. 8 (B), these are pressure-bonded in a state heated to a predetermined temperature in a vacuum to obtain an intermediate. Note that the second heater electrode 41 b having the plating film 401 formed on the surface is diffusion bonded to the bonding portion 402 of the ceramic layer 15. In addition, the via 22 and the via 421 of the heater unit 13 on which the plating film 401 is formed are diffusion bonded to the via 22 and the via 421 of the ceramic layer 15, respectively. Note that a minute space (air layer) is formed in a non-joined portion between the heater unit 13 and the ceramic layer 15. For example, underfill or the like may be injected and filled into this minute space. Thereafter, the intermediate body and the metal base 12 are bonded (adhered) with an adhesive (bonding layer 16) made of silicone resin. Thus, the electrostatic chuck 1 is obtained.

(Other embodiments)
It goes without saying that the present invention is not limited to the above-described embodiments, and can be implemented in various modes without departing from the present invention.

(1) In the above-described embodiment, the ceramic layer is disposed between the metal base and the heater unit. However, the ceramic layer may not be disposed.
(2) In the above-described embodiment, the heater unit is configured by stacking two organic layers provided with heater electrodes. However, for example, the heater unit may be configured by stacking three or more organic layers. And you may comprise only one organic layer.

  (3) The heater electrode may be divided into a plurality of heating regions, and each heating region may be independently controlled separately.

DESCRIPTION OF SYMBOLS 1 ... Electrostatic chuck 11 ... Main body board 111 ... Support surface 12 ... Metal base 121 ... Front surface 122 ... Back surface 13 ... Heater part 131 ... Organic layer 21 ... Electrode for adsorption 41 ... Heater electrode 8 ... Semiconductor wafer (processed object)

Claims (4)

A metal base having a front surface and a back surface;
A main body substrate which is disposed on the surface side of the metal base and has a support surface for supporting an object to be processed, and is made of ceramic;
An adsorption electrode provided on the main substrate for adsorbing the workpiece;
A heater unit disposed between the metal base and the main body substrate,
The heater unit includes an organic layer made of an organic material, and a heater electrode provided on the organic layer and on the metal base side.   The electrostatic chuck according to claim 1, wherein a ceramic layer made of ceramic is disposed between the metal base and the heater unit.   The electrostatic chuck according to claim 1, wherein the heater unit is formed by laminating a plurality of the organic layers provided with the heater electrode. A metal base having a front surface and a back surface, a main body substrate disposed on the front surface side of the metal base and having a support surface for supporting an object to be processed, made of ceramic, and provided on the main body substrate, the object to be processed In a method of manufacturing an electrostatic chuck comprising an adsorption electrode for adsorbing, and a heater unit disposed between the metal base and the main body substrate,
In producing the heater part, an electrostatic chuck manufacturing method comprising an exposure and development step of exposing and developing a metal conductor on an organic layer made of an organic material to form a heater electrode on the organic layer. Method.