JP6513938B2 - Method of manufacturing electrostatic chuck - Google Patents

Method of manufacturing electrostatic chuck Download PDF

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Publication number
JP6513938B2
JP6513938B2 JP2014236738A JP2014236738A JP6513938B2 JP 6513938 B2 JP6513938 B2 JP 6513938B2 JP 2014236738 A JP2014236738 A JP 2014236738A JP 2014236738 A JP2014236738 A JP 2014236738A JP 6513938 B2 JP6513938 B2 JP 6513938B2
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heater
layer
main body
metal base
electrode
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JP2016100474A (en
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宗之 岩田
宗之 岩田
卓 宮本
卓 宮本
善明 長屋
善明 長屋
豊 今西
豊 今西
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日本特殊陶業株式会社
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Description

  The present invention relates to an electrostatic chuck and a method of manufacturing the same.

  Conventionally, in a semiconductor manufacturing apparatus, processing such as dry etching (for example, plasma etching) is performed on a semiconductor wafer (for example, silicon wafer). In order to enhance the processing accuracy of the dry etching and the like, it is necessary to support the semiconductor wafer securely. An electrostatic chuck is known as a means for supporting a semiconductor wafer.

  The electrostatic chuck includes a main body substrate made of ceramic, an adsorption electrode provided on the main body substrate, and the like. The electrostatic chuck attracts and supports the semiconductor wafer on the upper surface (supporting surface) of the main body substrate using electrostatic attraction generated when a voltage is applied to the adsorption electrode.

  By the way, if the temperature of the semiconductor wafer suction-supported on the support surface of the main body substrate varies, the processing accuracy is lowered. In order to improve the processing accuracy, it is required to reduce the temperature variation of the support surface of the main substrate that adsorbs and supports the semiconductor wafer. For example, Patent Document 1 discloses an electrostatic chuck provided with a heater electrode (heating element) inside a main body substrate.

JP 2004-71647 A

  However, the electrostatic chuck of Patent Document 1 has the following problems. That is, the heater electrode is produced by forming (patterning) the heat generating material (metal paste) into a desired pattern by screen printing. In the case of screen printing, the thickness and width of the patterned heating element material are uneven due to printing blur, mesh marks by a screen mask, and the like. Therefore, variations occur in the thickness and width of the heater electrode after firing, which makes it difficult to generate heat uniformly. As a result, temperature variations occur on the support surface of the main substrate that suction-supports the semiconductor wafer.

  Further, the main body substrate and the heater electrode are formed by co-firing. Therefore, the distance (thermal conductivity) between the supporting surface of the main substrate and the heater electrode is varied due to the warpage or the burning unevenness of the main substrate at the time of firing. As a result, temperature variations occur on the support surface of the main substrate that suction-supports the semiconductor wafer.

  The present invention has been made in view of the above background, and an object of the present invention is to provide a high quality electrostatic chuck capable of suppressing temperature variation of the supporting surface of a main substrate supporting an object to be processed and a method of manufacturing the same. is there.

  One aspect of the present invention is a metal base having a front surface and a back surface, and a main substrate made of ceramic having a support surface disposed on the front surface side of the metal base and supporting an object, and the main substrate Provided with an adsorption electrode for adsorbing the object to be treated, and a heater portion disposed between the metal base and the main body substrate, the heater portion comprising an organic layer made of an organic material And a heater electrode provided on the organic layer and on the metal base side.

  The electrostatic chuck is provided with a heater portion between the metal base and the main body substrate. The heater portion has an organic layer and a heater electrode. The heater electrode is provided on the organic layer and on the metal base side. Therefore, for example, the heater electrode can be formed on the organic layer using a method such as photolithography. And compared with the case where conventional methods, such as screen printing, are used, the dispersion | variation in the thickness of a heater electrode and width can be suppressed, and heat_generation | fever of a heater electrode can be performed uniformly. Thereby, the temperature variation of the support surface of the main substrate supporting the object to be processed such as a semiconductor wafer can be suppressed. As a result, for example, the processing accuracy of an object to be processed such as a semiconductor wafer can be enhanced.

  Further, the heater electrode is provided not in the main body substrate but in a heater portion different from the main body substrate. That is, the main body substrate and the heater electrode are separately formed. Therefore, for example, as compared with the case where the main substrate and the heater electrode are formed by simultaneous firing, the thickness of the main substrate is smaller, and warpage and burning unevenness of the main substrate during firing can be suppressed, and the yield can be improved. it can. Thereby, the variation in the distance (thermal conductivity) between the support surface of the main body substrate and the heater electrode can be suppressed, and the temperature variation in the support surface of the main body substrate can also be suppressed. In addition, the quality can be improved.

  Furthermore, for example, unlike the case where the main substrate and the heater electrode are formed by co-firing, the main substrate and the heater electrode are separately formed. Therefore, the performance (conductivity etc.) of the heater electrode can be confirmed at the stage when the heater electrode is formed. Thereby, the yield can be improved and the quality can be improved.

  Another aspect of the present invention is a metal base having a front surface and a back surface, and a main substrate made of ceramic having a support surface disposed on the front surface side of the metal base and supporting an object, and the main substrate In the method of manufacturing an electrostatic chuck, comprising: an adsorption electrode for adsorbing the object to be processed; and a heater portion disposed between the metal base and the main body substrate. Is a method of manufacturing an electrostatic chuck including an exposure and development step of exposing and developing a metal conductor on an organic layer made of an organic material and forming a heater electrode on the organic layer. .

  The method for manufacturing the electrostatic chuck includes an exposure and development step of exposing and developing a metal conductor on an organic layer made of an organic material and forming a heater electrode on the organic layer when producing the heater portion. That is, the heater electrode can be formed on the organic layer using photolithography. As a result, it is possible to obtain the above-mentioned electrostatic chuck, that is, a high-quality electrostatic chuck capable of suppressing temperature variations of the support surface of the main substrate supporting the object to be processed such as a semiconductor wafer.

  As described above, according to the present invention, by providing the heater portion (organic layer, heater electrode) between the main body substrate and the metal base, temperature variation of the supporting surface of the main body substrate supporting the object to be treated can be suppressed. It is possible to provide a high quality electrostatic chuck and a method of manufacturing the same.

  In the electrostatic chuck, a ceramic layer made of ceramic may be disposed between the metal base and the heater portion. In this case, warpage of the entire electrostatic chuck can be suppressed. Further, alignment between the main substrate and the heater unit and the metal base is facilitated.

  The heater unit may be configured by laminating a plurality of the organic layers provided with the heater electrode. In this case, a plurality of heater electrodes can be easily provided in the heater portion. For example, the heater portion can easily be provided with a heater electrode serving as the main heater (main heater) and a heater electrode serving as the adjustment heater.

  The main body substrate is configured to be able to adsorb an object to be processed using an electrostatic attractive force generated when a voltage is applied to a suction electrode provided on the main body substrate. As a to-be-processed object, a semiconductor wafer, a glass substrate, etc. are mentioned.

  The main body substrate can be constituted of, for example, a plurality of laminated ceramic layers. With such a configuration, for example, various structures (for example, a suction electrode and the like) can be easily formed inside the main body substrate.

  As a ceramic material which comprises the said main body board | substrate, the sintered compact which has an alumina, a yttria (yttrium oxide), aluminum nitride, silicon carbide etc. as a main component can be used, for example.

  The material of the conductor constituting the adsorption electrode is not particularly limited, but in the case of forming these conductors and the ceramic part (main substrate) by the co-firing method, the metal powder in the conductor is determined by the sintering temperature of the main substrate. It also needs to have a high melting point. As a metal powder in a conductor, tungsten (W), molybdenum (Mo), these alloys etc. can be used, for example.

  As a metal material which comprises the said metal base, titanium (Ti), copper (Cu), aluminum (Al), these alloys etc. can be used. In addition, the metal base may be provided with a refrigerant flow path for circulating the cooling medium.

As a material which comprises the said organic layer of the said heater part, a polyimide resin, a polyethylene naphthalate resin etc. can be used, for example.
As a material of the conductor which comprises the said heater electrode of the said heater part, copper (Cu), gold (Au), platinum (Pt), tungsten (W), molybdenum (Mo) etc. can be used, for example.

  The heater unit can be bonded (bonded) to the main body substrate, the metal base, and the ceramic layer using, for example, an adhesive film made of resin. In particular, the surface of the heater portion on which the heater electrode is exposed is formed on the main substrate made of ceramic and the ceramic layer using, for example, a method such as diffusion bonding other than an adhesive film made of resin. It can be joined.

  In the method of manufacturing an electrostatic chuck, in the exposure and development step, the metal conductor on the organic layer made of an organic material is exposed and developed. Specifically, a photosensitive resin layer is formed on a metal conductor (film bonding or paste coating), and a pattern is formed on the metal conductor by exposure and development. In this case, a metal conductor may be applied on the organic layer by a method such as screen printing, or a sheet-like thin film metal conductor may be adhered on the organic layer. Alternatively, a metal conductor may be plated on the organic layer.

FIG. 2 is a cross-sectional explanatory view showing the structure of the electrostatic chuck of Embodiment 1; It is cross-sectional explanatory drawing which expanded a part of electrostatic chuck. (A) is a top view which shows a 1st heater electrode, (B) is a top view which shows a 2nd heater electrode. (A) is a cross-sectional explanatory view showing a state where a metal sheet is adhered on a resin layer, (B) is an enlarged cross-sectional explanatory view showing a resin layer and a metal sheet, (C) is on the resin layer It is cross-sectional explanatory drawing which shows the state in which the 1st heater electrode was formed. (A) is a cross-sectional explanatory view showing a state in which two resin layers are laminated, and (B) is a cross-sectional explanatory view showing a state in which two resin layers are laminated and pressure-bonded. (A) is a cross-sectional explanatory view showing a state in which the main body substrate, the heater portion, the ceramic layer and the like are laminated, and (B) is a cross-sectional explanatory view showing a state in which the main body substrate, the heater portion, the ceramic layer and the like are laminated and crimped It is. (A) is cross-sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate and a heater part, (B) is cross-sectional explanatory drawing which shows the state which laminates | stacks a main body board and a heater part, and crimps | bonds. (A) is a cross-sectional explanatory drawing which shows the state which laminates | stacks a main body board | substrate, a heater part, and a ceramic layer, (B) is a cross-sectional explanatory drawing which shows the state which diffusion-bonds a heater part and a ceramic layer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
As shown in FIGS. 1 to 3, the electrostatic chuck 1 of the present embodiment is disposed on the surface 121 side of the metal base 12 having the front surface 121 and the back surface 122 and the front surface 121 of the metal base 12. 8 has a support surface 111 for supporting the main body substrate 11 made of ceramic, and an adsorption electrode 21 provided on the main body substrate 11 for adsorbing the semiconductor wafer (object to be processed) 8, the metal base 12 and the main body And a heater unit 13 disposed between the substrate 11 and the substrate. The heater unit 13 includes an organic layer 131 made of an organic material, and heater electrodes 41 (41 a and 41 b) provided on the organic layer 131 and on the metal base 12 side. Hereinafter, the details of the electrostatic chuck 1 will be described.

  As shown in FIG. 1 and FIG. 2, the electrostatic chuck 1 is an apparatus for adsorbing and supporting a semiconductor wafer 8 which is an object to be processed. The electrostatic chuck 1 includes a main body substrate 11, a metal base 12, a heater unit 13 and the like.

  In the present embodiment, the main substrate 11 side is the upper side, and the metal base 12 side is the lower side. The vertical direction is the stacking direction of the main substrate 11 and the metal base 12, and the thickness direction of the main substrate 11 and the metal base 12. The direction orthogonal to the vertical direction (thickness direction) is a direction (planar direction, surface direction) in which the electrostatic chuck 1 spreads in a planar manner.

  As shown in the figure, the main body substrate 11 is a member that sucks and supports the semiconductor wafer 8. The main body substrate 11 has a front surface (supporting surface) 111 and a back surface 112, and is formed in a disk shape. The surface (supporting surface) 111 of the main body substrate 11 is a surface for adsorbing and supporting the semiconductor wafer 8. The main body substrate 11 is configured by laminating a plurality of ceramic layers (not shown). Each ceramic layer is made of an alumina sintered body containing alumina as a main component.

  A suction electrode 21 is disposed inside the main body substrate 11. The suction electrodes 21 are disposed substantially on the same plane inside the main body substrate 11. The adsorption electrode 21 is formed in a circular shape in plan view. The adsorption electrode 21 generates an electrostatic attractive force by applying a high DC voltage. The semiconductor wafer 8 is attracted to and supported by the surface (supporting surface) 111 of the main body substrate 11 by the electrostatic attraction. The adsorption electrode 21 is made of tungsten.

  The heater unit 13 is disposed between the main body substrate 11 and the metal base 12. The heater unit 13 is configured by laminating two organic layers 131. The two organic layers 131 are resin films made of polyimide resin. The heater electrode 41 (first heater electrode 41 a) is provided in one (upper) organic layer 131. The other (lower) organic layer 131 is provided with a heater electrode 41 (second heater electrode 41 b). The heater electrodes 41 (41a, 41b) are provided on the organic layer 131 and on the metal base 12 side (lower side). The heater electrodes 41 (41a, 41b) are made of copper.

  As shown in FIGS. 3A and 3B, the first heater electrode 41a and the second heater electrode 41b are elongated heating elements. The first heater electrode 41a and the second heater electrode 41b are repeatedly folded many times and arranged substantially concentrically on one (upper side) and the other (lower side) organic layer 131, respectively.

  As shown to FIG. 1, FIG. 2, the heater part 13 and the main body board | substrate 11 are joined via the contact bonding layer 141 arrange | positioned between both. Further, the heater portion 13 and the ceramic layer 15 described later are joined via an adhesive layer 141 disposed between them. The adhesive layer 141 is an adhesive film made of a polyimide resin or an epoxy resin.

  A ceramic layer 15 made of ceramic is disposed between the heater portion 13 and the metal base 12. The ceramic layer 15 is configured by laminating a plurality of ceramic layers (not shown) in the same manner as the main body substrate 11. Each ceramic layer is made of an alumina sintered body containing alumina as a main component. Also, the ceramic layer 15 and the metal base 12 are bonded via a bonding layer 16 disposed therebetween. The bonding layer 16 is made of a flexible adhesive made of silicone resin so as to reduce the difference in thermal expansion between the ceramic layer 15 made of ceramic and the metal base 12.

  A via 22 is connected to the adsorption electrode 21. The vias 22 are formed in the vertical direction from the adsorption electrode 21 to the back surface (lower surface) of the ceramic layer 15. The vias 22 are connected to the metallized layer 23 provided on the back surface of the ceramic layer 15.

  A via 421 is connected to the first heater electrode 41 a (terminals 411 and 412 (see FIG. 3A)). The via 422 is connected to the second heater electrode 41 b (terminal portions 411 and 412 (see FIG. 3B)). The vias 421 and 422 are formed vertically from the first heater electrode 41 a and the second heater electrode 41 b to the back surface (lower surface) of the ceramic layer 15, respectively. The vias 421 and 422 are connected to the metallized layers 431 and 432 provided on the back surface of the ceramic layer 15, respectively.

  The metal base 12 is a metal cooling member (cooling plate) made of aluminum or an aluminum alloy. The metal base 12 has a front surface 121 and a back surface 122, and is formed in a disk shape. The metal base 12 is disposed below the main body substrate 11.

  Inside the metal base 12, a refrigerant channel 123 for circulating a cooling medium (for example, a fluorinated liquid, pure water or the like) is provided. The refrigerant channels 123 are disposed substantially on the same plane inside the metal base 12. The refrigerant flow path 123 is formed in a spiral shape in a plan view. The coolant channel 123 is configured to introduce the cooling medium from one end thereof and to discharge the cooling medium from the other end thereof.

  Further, three internal holes 31 to 33 are formed in the metal base 12 so as to penetrate the front surface 121 and the back surface 122. A cylindrical insulating member 311 is fitted in the inner hole 31. A connection terminal 312 is provided on the metallized layer 23 in the internal hole 31. A terminal fitting 313 is attached to the connection terminal 312. The terminal fitting 313 is connected to a power supply circuit (not shown). Electric power for generating electrostatic attraction is supplied to the adsorption electrode 21 through the connection terminal 312 and the like.

  A cylindrical insulating member 321 is fitted in the internal hole 32. A connection terminal 322 is provided in the metallized layer 431 in the internal hole 32. A terminal fitting 323 is attached to the connection terminal 322. The terminal fitting 323 is connected to a power supply circuit (not shown). The first heater electrode 41a is supplied with power for generating heat from the first heater electrode 41a via the connection terminal 322 and the like.

  A cylindrical insulating member 331 is fitted in the inner hole 33. A connection terminal 332 is provided in the metallized layer 432 in the internal hole 33. A terminal fitting 333 is attached to the connection terminal 332. The terminal fitting 333 is connected to a power supply circuit (not shown). The second heater electrode 41 b is supplied with power for generating heat from the second heater electrode 41 b through the connection terminal 332 and the like.

  The first heater electrode 41a and the second heater electrode 41b are configured to be independently and separately controllable. In the present embodiment, the first heater electrode 41a is used as a main heater (main heater), and the second heater electrode 41b is used as an adjustment heater.

  Although not shown, a cooling gas supply passage serving as a supply passage of a cooling gas such as helium for cooling the semiconductor wafer 8 is provided in the electrostatic chuck 1. A plurality of cooling openings (not shown) formed by opening a cooling gas supply passage and a cooling gas supplied from the cooling openings are formed on the substrate surface (supporting surface) 111 of the main substrate 11. An annular cooling groove (not shown) formed so as to extend over the entire surface (supporting surface) 111 of the main body substrate 11 is provided.

Next, a method of manufacturing the electrostatic chuck 1 of the present embodiment will be described.
As shown in FIGS. 4 to 6, in the method of manufacturing the electrostatic chuck 1 of the present embodiment, when producing the heater portion 13, the metal sheet (metal conductor) 400 on the organic layer 131 made of an organic material is exposed. And an exposure and development step of forming the heater electrode 41 on the organic layer 131 after development. The details of the method of manufacturing the electrostatic chuck 1 will be described below.

  First, the main substrate 11 is manufactured. Specifically, a plurality of green sheets mainly composed of alumina are produced by a conventionally known method. Then, through holes or the like to be the vias 22 are formed at necessary places with respect to a predetermined green sheet. Thereafter, the conductor paste is filled in the through holes. Further, a conductor paste is applied by screen printing to a position where the suction electrode 21 is to be formed on a predetermined green sheet.

  Next, a plurality of green sheets are aligned with each other, laminated, and thermocompression bonded to obtain a laminate. The laminate is cut into a predetermined shape. Then, the laminated body is fired at a temperature of 1400 to 1600 ° C. in a reducing atmosphere to obtain the main substrate 11 provided with the adsorption electrode 21, the via 22 and the like.

  Moreover, the ceramic layer 15 is produced. Specifically, a plurality of green sheets mainly composed of alumina are produced by a conventionally known method. Then, through holes or the like to be the vias 421 and 422 are formed at necessary places in a predetermined green sheet. Thereafter, the conductor paste is filled in the through holes. Further, a conductor paste is applied by screen printing to a position where the metallized layer 23, 431, 432 is to be formed on a predetermined green sheet.

  Next, a plurality of green sheets are aligned with each other, laminated, and thermocompression bonded to obtain a laminate. The laminate is cut into a predetermined shape. Then, the laminate is fired at a temperature of 1400 to 1600 ° C. in a reducing atmosphere to obtain the ceramic layer 15 provided with the vias 421 and 422, the metallized layers 23, 431 and 432, and the like.

  In addition, the heater unit 13 is manufactured. Specifically, as shown in FIG. 4A, a thin metal sheet 400 (about 4 μm thick) is adhered on the organic layer 131 which is a resin film (about 24 μm thick) made of polyimide resin. Then, through holes to be the vias 22 are formed at necessary places. Thereafter, the conductor paste (silver paste) is filled in the through holes. Thereby, the vias 22 are formed.

  As shown in FIG. 4B, the organic layer 131 is composed of a thermosetting polyimide layer 131a having a thickness of about 20 μm and a pair of thermoplastic polyimide layers 131b having a thickness of about 2 μm disposed above and below it. .

  Next, as shown in FIG. 4C, the metal sheet 400 on the organic layer 131 is exposed and developed by photolithography. At this time, the portion to be the first heater electrode 41a is exposed, and the other portion is not exposed. In addition, unexposed portions are removed in development to leave exposed portions. Thereby, the first heater electrode 41 a is formed on the organic layer 131.

  Further, in the same procedure, the second heater electrode 41 b is formed on another organic layer 131 by photolithography. Vias 22 and 421 are formed in the organic layer 131 (see FIG. 5A described later).

  Subsequently, as shown to FIG. 5 (A), the organic layer 131 which provided the 1st heater electrode 41a, and the organic layer 131 which provided the 2nd heater electrode 41b are overlap | superposed. Then, as shown in FIG. 5B, pressure bonding is performed in a state where the two organic layers 131 are stacked. Thus, the heater portion 13 provided with the first heater electrode 41a and the second heater electrode 41b is obtained. Then, the performance (conductivity etc.) of the 1st heater electrode 41a and the 2nd heater electrode 41b is checked.

  Next, as shown in FIG. 6A, the main body substrate 11, the adhesive layer 141, the heater portion 13, the adhesive layer 141, and the ceramic layer 15 are sequentially stacked. The vias 22, 421 and 422 are formed in the ceramic layer 15 and the two adhesive layers 141. And as shown to FIG. 6 (B), these are crimped | bonded in the state heated to predetermined | prescribed temperature in vacuum, and an intermediate body is obtained. Thereafter, the intermediate body and the metal base 12 are bonded (bonded) by an adhesive (bonding layer 16) made of silicone resin. Thus, the electrostatic chuck 1 is obtained.

Next, functions and effects of the electrostatic chuck 1 of the present embodiment and the method of manufacturing the same will be described.
In the electrostatic chuck 1 of the present embodiment, a heater portion 13 is provided between the metal base 12 and the main body substrate 11. The heater unit 13 has an organic layer 131 and heater electrodes 41 (41a, 41b). The heater electrodes 41 (41 a, 41 b) are provided on the organic layer 131 and on the metal base 12 side. Therefore, as in the present embodiment, the heater electrode 41 (41a, 41b) can be formed on the organic layer 131 using photolithography. And compared with the case where methods, such as the conventional screen printing, are used, the dispersion | variation in the thickness of the heater electrode 41 (41a, 41b) and width can be suppressed. Thereby, temperature variation of the support surface 111 of the main substrate 11 supporting the semiconductor wafer 8 can be suppressed. As a result, for example, the processing accuracy of the semiconductor wafer 8 can be enhanced.

  The heater electrodes 41 (41 a and 41 b) are provided not on the main body substrate 11 but on the heater portion 13 different from the main body substrate 11. That is, the main substrate 11 and the heater electrodes 41 (41a, 41b) are separately formed. Therefore, for example, as compared with the case where the main substrate 11 and the heater electrodes 41 (41a, 41b) are formed by simultaneous firing, warpage and burnt unevenness of the main substrate 11 during firing can be suppressed, and the yield can be improved. it can. Thereby, the variation in the distance (thermal conductivity) between the support surface 111 of the main substrate 11 and the heater electrode 41 (41a, 41b) can be suppressed, and the temperature variation of the support surface 111 of the main substrate 11 can also be suppressed. In addition, the quality can be improved.

  Furthermore, for example, unlike the case where the main body substrate 11 and the heater electrodes 41 (41a, 41b) are formed by co-firing, the main body substrate 11 and the heater electrodes 41 (41a, 41b) are separately formed. Therefore, the performance (conductivity etc.) of the heater electrode 41 (41a, 41b) can be confirmed at the stage when the heater electrode 41 (41a, 41b) is formed. Thereby, the yield can be improved and the quality can be improved.

  Further, in the present embodiment, a ceramic layer 15 made of ceramic is disposed between the metal base 12 and the heater portion 13. Therefore, the warp of the entire electrostatic chuck 1 can be suppressed. Further, alignment between the main body substrate 11 and the heater 13 and the metal base 12 is facilitated.

  Moreover, the heater part 13 laminates | stacks multiple organic layers 131 in which the heater electrode 41 (41a, 41b) was provided. Therefore, the plurality of heater electrodes 41 (41a, 41b) can be easily provided in the heater unit 13. For example, in the heater unit 13, the heater electrode 41 (41a) as the main heater (main heater) and the heater electrode 41 (41b) as the adjustment heater can be easily provided.

  Further, in the method of manufacturing the electrostatic chuck 1 according to the present embodiment, the metal sheet 400 on the organic layer 131 made of an organic material is exposed and developed to produce the heater portion 13. 41a, 41b) are formed. That is, the heater electrode 41 (41a, 41b) can be formed on the organic layer 131 using photolithography. As a result, it is possible to obtain a high-quality electrostatic chuck 1 capable of suppressing temperature variation of the support surface 111 of the main substrate 11 supporting the semiconductor wafer 8.

  As described above, according to the present embodiment, it is possible to provide the high quality electrostatic chuck 1 capable of suppressing the temperature variation of the support surface 111 of the main substrate 11 supporting the semiconductor wafer (object to be processed) 8.

Second Embodiment
As shown in FIG. 7 and FIG. 8, this embodiment is an example in which the process of bonding the main body substrate 11, the heater unit 13 and the ceramic layer 15 is changed in the method of manufacturing the electrostatic chuck 1 of the first embodiment. Description of the same configuration and effects as those of the first embodiment will be omitted.

  As shown in FIG. 7A, the main substrate 11 and the heater portion 13 are superimposed. In the heater portion 13, the vias 22 and the vias 421 are formed to the same height as the second heater electrode 41b. Then, as shown in FIG. 7B, the main body substrate 11 and the heater portion 13 are pressure bonded in a vacuum while being heated to a predetermined temperature.

  Next, as shown in FIG. 8A, a plating film 401 is formed on the surface of the second heater electrode 41b. Also, the plating film 401 is formed on the surfaces of the vias 22 and the vias 421 of the heater unit 13. Further, a bonding portion 402 made of solder or the like is formed at a predetermined position of the ceramic layer 15 (a position corresponding to the plating film 401 formed on the heater portion 13). The bonding portion 402 is formed using a method such as photolithography, an inkjet, a dispenser, or the like. The vias 22 and the vias 421 of the ceramic layer 15 are formed to the same height as the bonding portion 402. Then, the main body substrate 11 and the heater portion 13 are superimposed on the ceramic layer 15.

  Next, as shown in FIG. 8 (B), these are pressure-bonded in a vacuum while being heated to a predetermined temperature to obtain an intermediate. The second heater electrode 41 b having the plating film 401 formed on the surface is diffusion bonded to the bonding portion 402 of the ceramic layer 15. Further, the vias 22 and the vias 421 of the heater unit 13 having the plating film 401 formed on the surfaces thereof are diffusion bonded to the vias 22 and the vias 421 of the ceramic layer 15 respectively. A minute space (air layer) is formed in the non-bonded portion between the heater portion 13 and the ceramic layer 15. For example, an underfill or the like may be injected / filled in this minute space. Thereafter, the intermediate body and the metal base 12 are bonded (bonded) by an adhesive (bonding layer 16) made of silicone resin. Thus, the electrostatic chuck 1 is obtained.

(Other embodiments)
It is needless to say that the present invention is not limited to the above-mentioned embodiment at all, and can be implemented in various modes without departing from the present invention.

(1) In the above-described embodiment, the ceramic layer is disposed between the metal base and the heater portion. However, the ceramic layer may not be disposed.
(2) In the above-mentioned embodiment, although a heater part is constituted by laminating two organic layers provided with a heater electrode, for example, three or more organic layers may be laminated and constituted. And may be composed of only one organic layer.

  (3) The heater electrode may be divided into a plurality of heating areas, and each heating area may be independently controlled separately.

DESCRIPTION OF SYMBOLS 1 ... Electrostatic chuck 11 ... Body substrate 111 ... Support surface 12 ... Metal base 121 ... Surface 122 ... Back surface 13 ... Heater part 131 ... Organic layer 21 ... Adsorption electrode 41 ... Heater electrode 8 ... Semiconductor wafer (process object)

Claims (1)

  1.   A metal base having a front surface and a rear surface, and a support surface disposed on the front surface side of the metal base and supporting an object to be processed, made of ceramic and provided on the body substrate, the object to be processed An adsorbing electrode for adsorbing the gas, a heater unit disposed between the metal base and the main body substrate, and a ceramic layer made of ceramic disposed between the metal base and the heater unit; In the manufacturing method of the provided electrostatic chuck,
      The electrostatic chuck is
      A first adhesive layer bonding the main body substrate and the heater unit;
      A second adhesive layer bonding the heater portion and the ceramic layer;
      And a bonding layer bonding the ceramic layer and the metal base,
      The heater unit includes an organic layer made of a polyimide resin, and a heater electrode provided on the organic layer and on the metal base side.
      The first adhesive layer and the second adhesive layer are polyimide resin or epoxy resin, and the bonding layer is silicone resin,
      The main body substrate, the first adhesive layer, the heater unit, the second adhesive layer, the ceramic layer, the bonding layer, and the metal base are disposed in this order.
      In producing the heater portion, the method includes an exposure and development step of exposing and developing a metal conductor on an organic layer made of polyimide resin and forming a heater electrode on the organic layer,
      A manufacturing method of an electrostatic chuck comprising a bonding step of bonding the main body substrate and the heater portion through an adhesive layer after separately manufacturing the main body substrate and the heater portion.
JP2014236738A 2014-11-21 2014-11-21 Method of manufacturing electrostatic chuck Active JP6513938B2 (en)

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Application Number Priority Date Filing Date Title
JP2014236738A JP6513938B2 (en) 2014-11-21 2014-11-21 Method of manufacturing electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014236738A JP6513938B2 (en) 2014-11-21 2014-11-21 Method of manufacturing electrostatic chuck

Publications (2)

Publication Number Publication Date
JP2016100474A JP2016100474A (en) 2016-05-30
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WO2018016588A1 (en) * 2016-07-20 2018-01-25 Toto株式会社 Electrostatic chuck
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