JP2019110253A - Holding device - Google Patents

Abstract

To sufficiently improve uniformity of a temperature distribution of a ceramic member of a holding device.SOLUTION: A holding device comprises: a ceramic member having an almost flat-shaped first surface roughly vertical to a first direction; a base member; and a joint part jointing the ceramic member and he base member. The holding device is a device for folding an object onto a first surface of the ceramic member. In the base member, a supply port and an exhaust port opened to a fourth surface of the base member, and a coolant passage connecting a space between the supply port and the exhaust port are formed. In a first direction view, a whole of the supply port is arranged to an outer side from an outer peripheral edge of the first surface of the ceramic member.SELECTED DRAWING: Figure 3

Description

  The technology disclosed herein relates to a holding device that holds an object.

  For example, an electrostatic chuck is used as a holding device for holding a wafer when manufacturing a semiconductor. The electrostatic chuck includes a ceramic member having a substantially planar surface (hereinafter, referred to as "suction surface") substantially perpendicular to a predetermined direction (hereinafter, referred to as "first direction"), a base member, and a ceramic member. And a chuck electrode provided inside the ceramic member. The electrostatic chuck attracts and holds the wafer on the suction surface of the ceramic member using electrostatic attraction generated by applying a voltage to the chuck electrode.

  If the temperature distribution of the wafer held on the suction surface of the electrostatic chuck becomes uneven, the accuracy of each process (film formation, etching, etc.) on the wafer may be degraded. Performance is required to make as uniform as possible. Therefore, the base member is formed with a supply port and a discharge port which are opened on the lower surface (surface opposite to the side facing the ceramic member), and a refrigerant flow path connecting the supply port and the discharge port. The temperature control of the adsorption surface of the ceramic member is performed by supplying the refrigerant to the refrigerant flow path (see, for example, Patent Document 1).

Japanese Patent Application Publication No. 2004-071647

  The refrigerant supplied from the supply port formed on the lower surface of the base member changes its flow direction, travels in the refrigerant flow path, and further changes the flow direction, and from the discharge port formed on the lower surface of the base member Exhausted. Therefore, the refrigerant has a relatively long residence time in the vicinity of the supply port in the refrigerant flow channel. In addition, the temperature of the refrigerant in the refrigerant channel is the lowest near the supply port. Therefore, in the conventional electrostatic chuck, the position where the suction surface of the ceramic member overlaps the supply port in the first direction view is likely to become a temperature singularity, and the uniformity of the temperature distribution of the suction surface can not be sufficiently improved. There is a problem of

  Such a subject is not limited to an electrostatic chuck that holds a wafer using electrostatic attraction, and includes a ceramic member, a base member, and a bonding portion, and holds an object on the surface of the ceramic member. This is a common problem for holding devices in general.

  The present specification discloses a technology that can solve the above-described problems.

  The technology disclosed in the present specification can be realized, for example, as the following form.

(1) A holding device disclosed in the present specification has a substantially planar first surface substantially perpendicular to a first direction, and a second surface opposite to the first surface. A ceramic member, a third surface, and a fourth surface opposite to the third surface, wherein the third surface faces the second surface of the ceramic member And a joint portion disposed between the second surface of the ceramic member and the third surface of the base member for joining the ceramic member and the base member. In the holding device for holding an object on the first surface of the ceramic member, the base member includes a supply port and a discharge port opened in the fourth surface of the base member, and the supply port. And a refrigerant flow path connecting the discharge port And, in the first direction when viewed, the whole of the supply port is disposed outside the outer periphery of the first surface of the ceramic member. In the holding device, the entire supply port having a relatively long residence time of the refrigerant in the refrigerant flow passage is disposed outside the outer peripheral edge of the first surface of the ceramic member in the first direction view. Therefore, according to the holding device, the occurrence of a temperature singularity on the first surface of the ceramic member due to the presence of the supply port can be suppressed, and the temperature distribution on the first surface of the ceramic member can be reduced. Uniformity can be sufficiently improved.

(2) In the holding device, the refrigerant flow path may be a first flow path extending in a direction intersecting the third surface from each of the supply port and the discharge port, and the third flow path. And a second flow path extending in a parallel direction and connecting between the two first flow paths, and adjacent to the first flow path extending from the supply port in the first direction view A portion of the second flow path may be disposed outside the outer peripheral edge of the first surface of the ceramic member. In the part of the second flow passage adjacent to the first flow passage extending from the supply port, the temperature of the refrigerant in the refrigerant flow passage becomes very low to the extent close to the supply port. Therefore, the position overlapping the part of the second flow path on the first surface of the ceramic member in the first direction view also tends to be a temperature singularity. In the holding device, a part of the second flow passage adjacent to the first flow passage extending from the supply port is disposed outside the outer peripheral edge of the first surface of the ceramic member in the first direction view . Therefore, according to the holding device, the occurrence of a temperature singularity on the first surface of the ceramic member due to the presence of the portion of the second flow path can be suppressed, and the first holding member of the ceramic member The uniformity of the temperature distribution on the surface of can be very effectively improved.

(3) In the holding device described above, the refrigerant flow path is substantially formed on a first flow path extending in a direction intersecting the third surface from each of the supply port and the discharge port, and the third flow path. And a second flow path extending in a parallel direction and connecting between the two first flow paths, and parallel to the first direction, passing through the center of the supply port, and In a cross section passing through a portion of the second flow path adjacent to the first flow path extending from the supply port, a surface of a portion of the second flow path opposite to the supply port in the first direction in the second flow path May be R-shaped. In the holding device, the surface of the portion facing the supply port in the first direction in the second flow path has an R shape. Therefore, by promoting the flow of the refrigerant in the portion of the second flow path, the stagnation in the portion can be suppressed, and the residence time of the refrigerant in the vicinity of the supply port can be shortened. Therefore, according to the holding device, the occurrence of the temperature singularity on the first surface of the ceramic member due to the presence of the supply port can be effectively suppressed, and the first surface of the ceramic member is The uniformity of the temperature distribution can be very effectively improved.

  Note that the technology disclosed in the present specification can be realized in various forms, for example, forms such as a holding device, an electrostatic chuck, a heater device such as a CVD heater, a vacuum chuck, and a manufacturing method thereof. Can be realized by

It is a perspective view which shows roughly the external appearance structure of the electrostatic chuck 100 in 1st Embodiment. It is an explanatory view showing roughly the XZ section composition of electrostatic zipper 100 in a 1st embodiment. It is an explanatory view showing roughly the XY section composition of electrostatic zipper 100 in a 1st embodiment. It is explanatory drawing which shows roughly the cross-sectional structure of a part of electrostatic chuck 100 in 1st Embodiment. It is explanatory drawing which shows roughly the cross-sectional structure of a part of electrostatic chuck 100 in 1st Embodiment. It is explanatory drawing which shows roughly the structure of the electrostatic chuck 100a of 2nd Embodiment. It is explanatory drawing which shows roughly the structure of the electrostatic chuck 100b of 3rd Embodiment.

A. First embodiment:
A-1. Configuration of electrostatic chuck 100:
FIG. 1 is a perspective view schematically showing an appearance configuration of the electrostatic chuck 100 in the first embodiment, and FIG. 2 is an explanatory view schematically showing an XZ sectional configuration of the electrostatic chuck 100 in the first embodiment. FIG. 3 is an explanatory view schematically showing an XY cross-sectional configuration of the electrostatic chuck 100 in the first embodiment. 2 shows the XZ cross-sectional configuration of the electrostatic chuck 100 at the position II-II in FIG. 3, and FIG. 3 shows the XY cross-sectional configuration of the electrostatic chuck 100 at the position III-III in FIG. It is shown. 4 and 5 are explanatory views schematically showing the cross-sectional configuration of a part of the electrostatic chuck 100 in the first embodiment. 4 shows a cross-sectional configuration parallel to the Z axis of a portion of the electrostatic chuck 100 at the position IV-IV in FIG. 3, and FIG. 5 shows the electrostatics at the position V-V in FIG. A cross-sectional configuration parallel to the Z-axis of a portion of the chuck 100 is shown. In each figure, mutually orthogonal XYZ axes for specifying the direction are shown. In this specification, for convenience, the Z-axis positive direction is referred to as the upper direction, and the Z-axis negative direction is referred to as the downward direction. However, the electrostatic chuck 100 is actually installed in an orientation different from such an orientation. It may be done. The up and down direction corresponds to the first direction in the claims.

  The electrostatic chuck 100 is a device for attracting and holding an object (for example, the wafer W) by electrostatic attraction, and is used, for example, to fix the wafer W in a vacuum chamber of a semiconductor manufacturing apparatus. The electrostatic chuck 100 includes a ceramic member 10 and a base member 20 arranged in a predetermined arrangement direction (in the present embodiment, in the vertical direction (Z-axis direction)). The ceramic member 10 and the base member 20 are arranged such that the lower surface S2 of the ceramic member 10 and the upper surface S3 of the base member 20 face each other in the arrangement direction. The electrostatic chuck 100 further includes a bonding layer 30 disposed between the lower surface S2 of the ceramic member 10 and the upper surface S3 of the base member 20. The lower surface S2 of the electrostatic chuck 100 corresponds to the second surface in the claims, and the upper surface S3 of the base member 20 corresponds to the third surface in the claims. The bonding layer 30 corresponds to the bonding portion in the claims.

  The ceramic member 10 is, for example, a circular flat plate member and is made of ceramic. The diameter of the ceramic member 10 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic member 10 is, for example, about 1 mm to 10 mm.

Various ceramics may be used as a forming material of the ceramic member 10, but from the viewpoints of strength, wear resistance, plasma resistance, etc., for example, aluminum oxide (alumina, Al ₂ O ₃ ) or aluminum nitride (AlN) It is preferable to use ceramics whose main component is In addition, the main component here means the component with most content ratio (weight ratio).

  Inside the ceramic member 10, a pair of chuck electrodes 40 formed of a conductive material (for example, tungsten, molybdenum or the like) is provided. When a voltage is applied from a power source (not shown) to the pair of chuck electrodes 40, an electrostatic attractive force is generated, and the electrostatic attractive force causes the wafer W to be an upper surface of the ceramic member 10 (a substantially flat surface perpendicular to the Z axis direction). (Hereinafter referred to as "suction surface S1") and fixed by suction. The suction surface S1 corresponds to the first surface in the claims.

  Further, inside the ceramic member 10, a heater 50 formed of a resistive heating element containing a conductive material (for example, tungsten, molybdenum or the like) is provided. When a voltage is applied to the heater 50 from a power supply (not shown), the heater 50 generates heat to warm the ceramic member 10, and the wafer W held on the suction surface S1 of the ceramic member 10 is warmed. Thereby, temperature control of the wafer W is realized.

  The bonding layer 30 contains an adhesive such as, for example, a silicone resin, an acrylic resin, or an epoxy resin, and bonds the ceramic member 10 and the base member 20. The thickness of the bonding layer 30 is, for example, about 0.1 mm to 1 mm.

  The base member 20 is a substantially circular flat plate member having a diameter larger than that of the ceramic member 10, and is formed of, for example, a metal (aluminum, an aluminum alloy, or the like). The diameter of the base member 20 is, for example, about 220 mm to 550 mm (usually about 220 mm to 350 mm), and the thickness of the base member 20 is, for example, about 20 mm to 40 mm.

  A refrigerant flow path 200 is formed inside the base member 20. When the refrigerant (for example, a fluorine-based inert liquid or water) is supplied to the refrigerant flow path 200, the base member 20 is cooled. When the base member 20 is cooled in combination with the heating of the ceramic member 10 by the heater 50 described above, the adsorption surface of the ceramic member 10 is generated by the heat transfer between the ceramic member 10 and the base member 20 via the bonding layer 30. The temperature of the wafer W held at S1 is maintained constant. Furthermore, when heat input from the plasma is generated during plasma processing, temperature control of the wafer W is realized by adjusting the power applied to the heater 50.

  The configuration of the coolant channel 200 of the base member 20 will be described in more detail. A supply port 201 and a discharge port 202 are opened in the lower surface S4 of the base member 20. As shown in FIG. 3, the supply port 201 and the discharge port 202 are disposed near the outer peripheral edge of the base member 20 as viewed in the Z-axis direction. More specifically, the supply port 201 and the discharge port 202 are all disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 as viewed in the Z-axis direction. The lower surface S4 of the base member 20 in the present embodiment corresponds to the fourth surface in the claims.

  The refrigerant flow path 200 is formed to connect the supply port 201 and the discharge port 202. More specifically, the refrigerant flow path 200 extends from the supply port 201 in the direction crossing the upper surface S3 of the base member 20 (in the present embodiment, in the Z-axis direction), and the discharge port 202 from the base member 20. The discharge-side flow passage 212 extends in a direction intersecting the upper surface S3 (in the embodiment, the Z-axis direction), and extends in a direction substantially parallel to the upper surface S3 of the base member 20. And a main channel 220 connecting the two. As shown in FIG. 3, as viewed in the Z-axis direction, the main flow path 220 is formed in a spiral shape that is folded back near the center of the base member 20. The supply side flow passage 211 and the discharge side flow passage 212 correspond to a first flow passage in the claims, and the main flow passage 220 corresponds to a second flow passage in the claims.

  Further, as shown in FIG. 3, in the Z-axis direction, a part of the main flow passage 220 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10. Specifically, a portion (X1 part in FIG. 3) of the main flow channel 220 adjacent to (connected to) the supply flow channel 211 extending from the supply port 201 and adjacent to (connected to) the discharge flow channel 212 extending from the discharge port 202 3) A part (X2 part in FIG. 3) of the main flow path 220 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10. In the present embodiment, the connection portion between the supply side flow passage 211 and the main flow passage 220 and the connection portion between the discharge side flow passage 212 and the main flow passage 220 are also outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 Is located in

  Further, as shown in FIG. 4, it is parallel to the Z-axis direction, passes through the center of the supply port 201, and passes through a portion of the main flow path 220 adjacent to (connected to) the supply side flow path 211 extending from the supply port 201. In the cross section (for example, the cross section shown in FIG. 4), the surface of the portion facing the supply port 201 in the Z-axis direction in the main flow path 220 (hereinafter referred to as “supply port facing portion 221”) has an R shape There is. Similarly, as shown in FIG. 5, a portion of the main flow passage 220 parallel to the Z-axis direction, passing through the center of the discharge port 202 and adjacent to (connecting to) the discharge side flow channel 212 extending from the discharge port 202 In the cross section (for example, the cross section shown in FIG. 5) which passes through, the surface of the portion (hereinafter referred to as “the discharge port facing portion 222”) facing the discharge port 202 in the Z-axis direction in the main flow passage 220 has an R shape. ing. The cross section passing parallel to the Z-axis direction described above, passing through the center of the supply port 201, and passing through a portion of the main flow path 220 adjacent to the supply side flow path 211 extending from the supply port 201 is the supply side flow path 211. From the above, it can be said that the cross section is substantially parallel to the flow direction of the refrigerant flowing into the main flow passage 220. Similarly, the cross section passing a part of the main flow passage 220 which is parallel to the above-mentioned Z-axis direction, passes through the center of the discharge port 202 and is adjacent to the discharge side flow passage 212 extending from the discharge port 202 It can be said that the cross section is substantially parallel to the flow direction of the refrigerant flowing into the discharge side flow passage 212.

  The base member 20 having such a configuration forms, for example, a groove having a shape corresponding to the main flow passage 220 in one metal member (for example, an aluminum member), and supplies the groove to the other metal member (for example, an aluminum member). A hole having a shape corresponding to the side flow passage 211 and the discharge side flow passage 212 can be formed, and the two members can be manufactured, for example, by welding.

A-2. Effects of the present embodiment:
As described above, the electrostatic chuck 100 according to the present embodiment includes the ceramic member 10 having the substantially planar adsorption surface S1 substantially perpendicular to the Z-axis direction and the lower surface S2 opposite to the adsorption surface S1. , A base member 20 having an upper surface S3 and a lower surface S4 opposite to the upper surface S3 and disposed such that the upper surface S3 faces the lower surface S2 of the ceramic member 10, and the lower surface S2 of the ceramic member 10 and the base A bonding layer 30 disposed between the upper surface S3 of the member 20 and bonding the ceramic member 10 and the base member 20 is provided, and an object (for example, a wafer W) is held on the suction surface S1 of the ceramic member 10 It is an apparatus. Further, in the electrostatic chuck 100 according to the present embodiment, the base member 20 includes the supply port 201 and the discharge port 202 opened in the lower surface S4 of the base member 20, and the refrigerant flow connecting the supply port 201 and the discharge port 202. A channel 200 is formed. Further, in the electrostatic chuck 100 of the present embodiment, the entire of the supply port 201 and the discharge port 202 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 in the Z-axis direction. Since the electrostatic chuck 100 according to the present embodiment has such a configuration, as described below, the uniformity of the temperature distribution of the suction surface S1 can be sufficiently improved.

  That is, in the electrostatic chuck 100 according to the present embodiment, the supply port 201 and the discharge port 202 are opened in the lower surface S4 of the base member 20, and the refrigerant flow path 200 connecting the supply port 201 and the discharge port 202. Is formed on the base member 20. The refrigerant supplied from the supply port 201 formed on the lower surface S4 of the base member 20 changes its flow direction, travels in the refrigerant flow path 200, and changes its flow direction to the lower surface S4 of the base member 20. It is discharged from the formed discharge port 202. Therefore, the refrigerant has a relatively long residence time in the vicinity of the supply port 201 and the discharge port 202. Further, the temperature of the refrigerant in the refrigerant flow path 200 is the lowest in the vicinity of the supply port 201 and is the highest in the vicinity of the outlet 202. Therefore, in the electrostatic chuck of the conventional configuration, the position overlapping the supply port 201 and the discharge port 202 in the suction surface S1 of the ceramic member 10 is likely to become a temperature singularity in the Z-axis direction. However, in the electrostatic chuck 100 of the present embodiment, the whole of the supply port 201 and the discharge port 202 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 in the Z-axis direction. Therefore, according to the electrostatic chuck 100 of the present embodiment, it is possible to suppress the occurrence of a temperature singularity point on the suction surface S1 of the ceramic member 10 due to the presence of the supply port 201 and the discharge port 202. As a result, the uniformity of the temperature distribution on the suction surface S1 of the ceramic member 10 can be sufficiently improved.

  Further, in the electrostatic chuck 100 of the present embodiment, the refrigerant flow path 200 extends from the supply port 201 in the direction intersecting the upper surface S3 of the base member 20 and the discharge port 202 of the base member 20. A discharge side flow passage 212 extending in a direction intersecting the upper surface S3; a main flow passage 220 extending in a direction substantially parallel to the upper surface S3 of the base member 20 and connecting the supply side flow passage 211 and the discharge side flow passage 212; Have. Further, in the electrostatic chuck 100 according to the present embodiment, a portion (X1 portion in FIG. 3) of the main flow passage 220 adjacent to the supply side flow passage 211 extending from the supply port 201 and the discharge port 202 A part (X2 part in FIG. 3) of the main flow passage 220 adjacent to the discharge side flow passage 212 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10. The temperature of the refrigerant in the refrigerant flow channel 200 becomes very low according to the vicinity of the supply port 201 in the part of the main flow path 220 adjacent to the supply side flow path 211 extending from the supply port 201 described above. Further, in the part of the main flow passage 220 adjacent to the discharge side flow passage 212 extending from the discharge opening 202 described above, the temperature of the refrigerant in the refrigerant flow passage 200 becomes very high to the extent of being close to the discharge opening 202. Therefore, in the electrostatic chuck of the conventional configuration, the position overlapping the respective portions of the main flow path 220 in the suction surface S1 of the ceramic member 10 in the Z-axis direction also tends to be a temperature singularity. However, in the electrostatic chuck 100 of the present embodiment, the respective portions of the main flow path 220 are disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 in the Z-axis direction. Therefore, according to the electrostatic chuck 100 of the present embodiment, it is possible to suppress the occurrence of a temperature singularity point on the adsorption surface S1 of the ceramic member 10 due to the presence of each portion of the main flow passage 220. The uniformity of the temperature distribution on the adsorption surface S1 of the member 10 can be extremely effectively improved.

  Further, in the electrostatic chuck 100 of the present embodiment, the refrigerant flow path 200 extends from the supply port 201 in the direction intersecting the upper surface S3 of the base member 20 and the discharge port 202 of the base member 20. A discharge side flow passage 212 extending in a direction intersecting the upper surface S3; a main flow passage 220 extending in a direction substantially parallel to the upper surface S3 of the base member 20 and connecting the supply side flow passage 211 and the discharge side flow passage 212; Have. Further, in the electrostatic chuck 100 of the present embodiment, it is parallel to the Z-axis direction, passes through the center of the supply port 201, and passes through a part of the main flow path 220 adjacent to the supply side flow path 211 extending from the supply port 201. In a cross section (that is, a cross section substantially parallel to the flow direction of the refrigerant flowing from the supply side flow passage 211 into the main flow passage 220), a portion facing the supply port 201 in the Z axis direction in the main flow passage 220 The surface of 221) is R-shaped. Similarly, in the electrostatic chuck 100 of the present embodiment, a portion of the main flow passage 220 which is parallel to the Z-axis direction, passes through the center of the discharge port 202 and is adjacent to the discharge side flow channel 212 extending from the discharge port 202 In a cross section passing through (that is, a cross section substantially parallel to the flow direction of the refrigerant flowing from the main flow path 220 into the discharge side flow path 212), a portion facing the discharge port 202 in the Z axis direction in the main flow path 220 The surface of the portion 222) is R-shaped. Therefore, in the electrostatic chuck 100 of the present embodiment, the flow of the refrigerant in the supply port facing portion 221 and the discharge port facing portion 222 of the main flow path 220 is promoted, so that the discharge port facing portion 221 and the discharge port facing portion 222 The retention of the refrigerant can be suppressed, and the residence time of the refrigerant in the vicinity of the supply port 201 and the outlet 202 can be shortened. Therefore, according to the electrostatic chuck 100 of the present embodiment, the occurrence of the temperature singularity point on the suction surface S1 of the ceramic member 10 due to the presence of the supply port 201 and the discharge port 202 is effectively suppressed. Thus, the uniformity of the temperature distribution on the adsorption surface S1 of the ceramic member 10 can be extremely effectively improved.

B. Second embodiment:
FIG. 6 is an explanatory view schematically showing the configuration of the electrostatic chuck 100 a of the second embodiment. 6 shows an XY cross-sectional configuration of the electrostatic chuck 100a of the second embodiment corresponding to the cross section of FIG. 3 described above. In the following, among the configurations of the electrostatic chuck 100a of the second embodiment, the same components as those of the electrostatic chuck 100 of the first embodiment described above are denoted by the same reference numerals, and the description thereof will be appropriately omitted. .

  As shown in FIG. 6, the configuration of the electrostatic chuck 100 a of the second embodiment is the same as that of the electrostatic chuck 100 of the first embodiment described above in the discharge port 202 (and the discharge side flow passage 212). The position and the shape of the main channel 220 are different. Specifically, in the electrostatic chuck 100 a of the second embodiment, the discharge port 202 (and the discharge side flow passage 212) is disposed near the center of the base member 20 in the Z-axis direction. Therefore, in the electrostatic chuck 100a of the second embodiment, the discharge port 202 (and the discharge side flow passage 212) is disposed inside the outer peripheral edge of the suction surface S1 of the ceramic member 10 as viewed in the Z-axis direction. The supply port 201 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 as viewed in the Z-axis direction, similarly to the electrostatic chuck 100 of the first embodiment.

  Further, in the electrostatic chuck 100 a according to the second embodiment, the main flow passage 220 is formed in a spiral shape as viewed in the Z-axis direction. In the electrostatic chuck 100a of the second embodiment, like the electrostatic chuck 100 of the first embodiment, a portion of the main flow passage 220 adjacent to (connected to) the supply side flow passage 211 extending from the supply port 201 (X1 in FIG. Are disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10. However, on the side of the discharge port 202, a part of the main flow passage 220 is not disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10.

  As described above, in the electrostatic chuck 100a of the second embodiment, the entire supply port 201 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 as viewed in the Z-axis direction. It is possible to suppress the occurrence of a temperature singularity point on the adsorption surface S1 of the ceramic member 10 due to the presence of 201, and as a result, the uniformity of the temperature distribution on the adsorption surface S1 of the ceramic member 10 is sufficiently improved. be able to.

  Further, in the electrostatic chuck 100a according to the second embodiment, a portion (X1 portion in FIG. 6) of the main flow passage 220 adjacent to the supply side flow passage 211 extending from the supply port 201 attracts the ceramic member 10 as viewed in the Z-axis direction. Since it is disposed outside the outer peripheral edge of the surface S1, generation of a temperature singularity point on the adsorption surface S1 of the ceramic member 10 due to the presence of the above-mentioned part of the main flow passage 220 can be suppressed. The uniformity of the temperature distribution on the ten adsorption surfaces S1 can be extremely effectively improved.

C. Third embodiment:
FIG. 7 is an explanatory view schematically showing the configuration of the electrostatic chuck 100 b of the third embodiment. FIG. 7 shows a cross-sectional configuration of the electrostatic chuck 100b according to the third embodiment corresponding to the cross section of FIG. 4 described above. Hereinafter, among the configurations of the electrostatic chuck 100b according to the third embodiment, the same components as those of the electrostatic chuck 100 according to the first embodiment described above are denoted by the same reference numerals, and the description thereof will be appropriately omitted. .

  As shown in FIG. 7, the configuration of the electrostatic chuck 100 b of the third embodiment is different from the configuration of the electrostatic chuck 100 of the first embodiment described above in the extending direction of the supply side channel 211. . Specifically, in the electrostatic chuck 100b of the third embodiment, it is parallel to the Z-axis direction, passes through the center of the supply port 201, and is adjacent to (connects to) the supply-side flow path 211 extending from the supply port 201. In the cross section (for example, the cross section shown in FIG. 7) passing through a part of the main flow passage 220, the extension direction of the supply side flow passage 211 is not the Z axis direction, but the base member 20 from the supply port 201 side toward the main flow passage 220 side. It is inclined to the center of the In the electrostatic chuck 100b of the third embodiment, the surface of the supply port facing portion 221 is not rounded.

  Further, although not shown, in the electrostatic chuck 100 b of the third embodiment, the extending direction of the discharge side flow passage 212 is the same as the supply side flow passage 211. That is, in the cross section passing a part of the main flow passage 220 which is parallel to the Z-axis direction, passes through the center of the discharge port 202, and is adjacent to (connects to) the discharge side flow passage 212 extending from the discharge port 202 The extension direction 212 is not the Z-axis direction, but is a direction inclined toward the center side of the base member 20 from the outlet 202 side toward the main flow path 220 side. In the electrostatic chuck 100b of the third embodiment, the surface of the discharge port facing portion 222 is not formed in an R shape.

  As described above, in the electrostatic chuck 100b of the third embodiment, the extending direction of the supply side flow passage 211 and the discharge side flow passage 212 is not the Z-axis direction, but the main flow from the supply port 201 side or the discharge port 202 side. The direction toward the center of the base member 20 toward the path 220 is inclined. Therefore, in the electrostatic chuck 100b of the third embodiment, the flow of the refrigerant flowing from the supply side flow passage 211 into the main flow passage 220 is promoted, and the flow of the refrigerant flowing from the main flow passage 220 into the discharge side flow passage 212 is By promoting, retention of the refrigerant in the supply port facing portion 221 and the discharge port facing portion 222 can be suppressed, and the residence time of the refrigerant in the vicinity of the supply port 201 and the discharge port 202 can be shortened. Therefore, according to the electrostatic chuck 100b of the third embodiment, the occurrence of the temperature singularity point on the suction surface S1 of the ceramic member 10 due to the presence of the supply port 201 and the discharge port 202 is effectively suppressed. Thus, the uniformity of the temperature distribution on the suction surface S1 of the ceramic member 10 can be extremely effectively improved.

D. Modification:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the scope of the present invention. For example, the following modifications are also possible.

  The configuration of the electrostatic chuck 100 in the above embodiment is merely an example, and various modifications are possible. For example, in the first embodiment, the entire of the supply port 201 and the discharge port 202 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10 in the Z-axis direction, but the supply port The entire surface of only 201 may be disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10.

  In the first embodiment, a part (X1 part in FIG. 3) of the main flow passage 220 adjacent to the supply side flow passage 211 extending from the supply port 201 and the discharge side flow extending from the discharge opening 202 in the Z-axis direction Both of the part (main part X2 in FIG. 3) of the main flow path 220 adjacent to the path 212 is disposed outside the outer peripheral edge of the suction surface S1 of the ceramic member 10, but one or both of these parts are You may be arrange | positioned inside the outer periphery of adsorption surface S1 of the ceramic member 10. As shown in FIG.

  In the first and second embodiments, the surfaces of the supply port facing portion 221 and the discharge port facing portion 222 have an R shape, but one or both surfaces of the supply port facing portion 221 and the discharge port facing portion 222 are It may not be R-shaped.

  In the first and second embodiments, the extending direction of at least one of the supply side flow passage 211 and the discharge side flow passage 212 is not the Z-axis direction but another direction (for example, a third direction shown in FIG. 7). The same direction as in the embodiment may be adopted.

  Further, in the above embodiment, although the single electrode system in which one chuck electrode 40 is provided inside the ceramic member 10 is adopted, the bipolar system in which the pair of chuck electrodes 40 is provided inside the ceramic member 10 is It may be adopted. Moreover, the material which forms each member in the electrostatic chuck 100 of the said embodiment is an illustration to the last, and each member may be formed with another material.

  Furthermore, the present invention is not limited to the electrostatic chuck 100 that holds the wafer W using electrostatic attraction, and another holding device that holds an object on the surface of a ceramic member (for example, a heater device such as a CVD heater) And vacuum chuck etc.).

10: ceramic member 20: base member 30: bonding layer 40: chuck electrode 50: heater 100: electrostatic chuck 200: refrigerant flow path 201: supply port 202: discharge port 211: supply side flow path 212: discharge side flow path 220 : Main flow path 221: Supply port facing portion 222: Discharge port facing portion

Claims (3)

A ceramic member having a substantially planar first surface substantially perpendicular to a first direction, and a second surface opposite to the first surface;
A base having a third surface and a fourth surface opposite to the third surface, the third surface being disposed to face the second surface of the ceramic member Members,
A bonding portion disposed between the second surface of the ceramic member and the third surface of the base member and bonding the ceramic member and the base member;
A holding device for holding an object on the first surface of the ceramic member,
The base member is formed with a supply port and a discharge port opened to the fourth surface of the base member, and a refrigerant flow path connecting the supply port and the discharge port.
A holding device characterized in that, in the first direction view, the entire supply port is disposed outside the outer peripheral edge of the first surface of the ceramic member. In the holding device according to claim 1,
The refrigerant flow path is
A first flow path extending in a direction intersecting the third surface from each of the supply port and the discharge port;
A second flow path extending in a direction substantially parallel to the third surface and connecting between the two first flow paths;
Have
A part of the second flow passage adjacent to the first flow passage extending from the supply port is disposed outside the outer peripheral edge of the first surface of the ceramic member in the first direction, A holding device characterized in that In the holding device according to claim 1 or 2,
The refrigerant flow path is
A first flow path extending in a direction intersecting the third surface from each of the supply port and the discharge port;
A second flow path extending in a direction substantially parallel to the third surface and connecting between the two first flow paths;
Have
In a cross section which is parallel to the first direction, passes through the center of the supply port, and passes through a portion of the second flow channel adjacent to the first flow channel extending from the supply port, the second A holding device characterized in that a surface of a portion of the flow path opposite to the supply port in the first direction is R-shaped.

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