JP2017228361A - Heating member and electrostatic chuck - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating member and an electrostatic chuck in which a conductive part for supplying power to heating elements can be easily arranged even if the heating elements are provided in a plurality of layers on an insulation substrate.SOLUTION: In a ceramic heater of an electrostatic chuck, an intermediate conductive layer 69 has such a shape that, in a plan view, a length along the circumferential direction of a ceramic substrate 17 is longer than a length along the radial direction of the ceramic substrate 17. Therefore, even if a gap region K where a second heating part (thus, a second heating element 25) does not exist is small on a virtual plane (a second plane H2), the intermediate conductive layer 69 can be easily arranged in the gap region K.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a heating member such as a ceramic heater that can heat a workpiece such as a semiconductor wafer, and an electrostatic chuck including the heating member.

  Conventionally, in a semiconductor manufacturing apparatus, a process such as dry etching (for example, plasma etching) is performed on a semiconductor wafer (for example, a silicon wafer). In order to increase the accuracy of this dry etching, it is necessary to securely fix the semiconductor wafer. As a fixing means for fixing the semiconductor wafer, an electrostatic chuck for fixing the semiconductor wafer by electrostatic attraction is used. Yes.

  Specifically, in an electrostatic chuck, for example, an adsorption electrode is provided in a ceramic substrate, and an electrostatic attractive force generated when a voltage is applied to the adsorption electrode is used to attach a semiconductor wafer to the ceramic substrate. Adsorb to the upper surface (adsorption surface). In the electrostatic chuck, for example, a metal base is bonded to the lower surface (bonding surface) of the ceramic substrate.

  Some electrostatic chucks have a function of adjusting (heating or cooling) the temperature of the semiconductor wafer attracted to the attracting surface. For example, there is a technique of heating a semiconductor wafer on an adsorption surface by disposing a heating element in a ceramic substrate and heating the ceramic substrate with the heating element.

  Furthermore, in order to precisely heat the electrostatic chuck, a ceramic heater in which a ceramic substrate is divided into a plurality of heating zones (heating regions) has been developed. Specifically, a ceramic heater with a multi-zone heater has been proposed in which a heating element capable of independently heating each heating zone is arranged in each heating zone to improve the temperature adjustment function of the ceramic substrate ( Patent Document 1).

  In recent years, ceramic heaters having a multi-zone heater, in which a large number of heating elements are arranged in two layers in the thickness direction inside the ceramic substrate, for the purpose of adjusting the temperature with higher accuracy, etc. Has been developed.

  That is, a large number of first heating elements are arranged on the side close to the suction surface (first main surface) of the ceramic substrate (that is, the first flat surface), and on the surface opposite to the suction surface (second main surface). A ceramic heater having a large number of second heating elements arranged on the near side (that is, the second plane) has been developed.

JP 2005-166354 A

  When a large number of heating elements are arranged in two layers as in the prior art described above, a large number of terminal portions are provided on the second main surface of the ceramic substrate in order to supply power to each heating element from the outside. It is necessary to electrically connect each heating element and each terminal portion.

  However, the first heating element close to the first main surface and the terminal portion on the second main surface are connected by a conductive portion such as a via or an internal wiring layer (that is, a conductive portion extending in the thickness direction of the ceramic substrate). In this case, the conductive portion needs to be disposed between the second heating elements close to the second main surface, so that there is a problem that the arrangement is not easy. That is, since a large number of second heating elements are provided, it is not easy to dispose the conductive portion between many second heating elements.

Thus, when many heat generating bodies are arrange | positioned in two layers, there existed a problem that it was not easy to arrange | position the electroconductive part for supplying electric power to the heat generating body far from a terminal part.
The present invention has been made in view of the above problems, and an object thereof is to easily dispose a conductive portion for supplying power to the heating element even when the heating element is divided into a plurality of layers on the insulating substrate. It is an object of the present invention to provide a heating member and an electrostatic chuck.

  (1) A first aspect of the present invention includes an insulating substrate having a first main surface on which a workpiece is mounted and a second main surface opposite to the first main surface and having electrical insulation properties. And a heating part that is arranged inside the insulating substrate and generates heat when energized, and a terminal part provided on the second main surface of the insulating substrate, and a heating part arranged inside the insulating substrate as a heating part. The present invention relates to a heating member including one heat generating part and a second heat generating part disposed on the second main surface side of the first heat generating part.

  In this heating member, an intermediate conductive layer is disposed along the direction of the virtual plane in a region without the second heat generation portion in the virtual plane along the first main surface where the second heat generation portion is disposed. The first heat generating part and the terminal part are electrically connected via the intermediate conductive layer. Moreover, the intermediate conductive layer has a shape in which the length along the circumferential direction of the insulating substrate is longer than the length along the radial direction of the insulating substrate in a plan view when the insulating substrate is viewed in the thickness direction.

  Thus, in the first aspect, the intermediate conductive layer (which constitutes a part of the conductive portion connecting the first heat generating portion and the terminal portion) is longer than the length along the radial direction of the insulating substrate in plan view. Since the length along the circumferential direction of the insulating substrate also has a long shape, even if the radial direction of the region without the second heat generating portion (that is, the gap region) is narrow in the virtual plane, the intermediate conductive layer can be easily formed in the gap region. Can be arranged.

  (2) In the second aspect of the present invention, at least the first heat generating portion is composed of a plurality of heat generating elements capable of independently adjusting the temperature, and the terminal portions are electrically connected to the plurality of heat generating elements, respectively. A plurality of terminal pads are provided, a region having no second heat generating portion is provided with a plurality of intermediate conductive layers along the direction of the virtual plane, and the plurality of heat generating elements and the plurality of terminal pads of the first heat generating portion are Are electrically connected to each other through any of the plurality of intermediate conductive layers.

  In the second aspect, even when the first heat generating portion is composed of a plurality of heat generating elements and it is necessary to provide an intermediate conductive layer corresponding to each of the heat generating elements, the plurality of intermediate conductive layers are formed in the gap region having a narrow radial direction. Can be easily arranged.

(3) In the third aspect of the present invention, a plurality of intermediate conductive layers are arranged along the circumferential direction in plan view.
In the third aspect, by arranging a plurality of intermediate conductive layers (long in the circumferential direction) along the circumferential direction, even when the length of the gap space in the radial direction is short (that is, when the interval is narrow), many intermediate layers The conductive layer can be easily disposed.

(4) In the fourth aspect of the present invention, a plurality of vias are connected to the intermediate conductive layer on at least one side in the thickness direction, and the plurality of vias are arranged along the circumferential direction in plan view. Yes.
In the fourth aspect, the vias can be easily arranged so as to be connected to the intermediate conductive layer by the configuration in which the vias are arranged along the circumferential direction (and hence the longitudinal direction of the intermediate conductive layer).

(5) In the fifth aspect of the present invention, an internal wiring layer electrically connected to the first heat generating portion and the intermediate conductive layer via vias, respectively, between the first heat generating portion and the intermediate conductive layer. It has.
In the fifth aspect, the first heat generating portion and the intermediate conductive layer can be electrically connected by the internal wiring layer.

(6) In the sixth aspect of the present invention, the second heat generating portion has a plurality of lines extending in the circumferential direction, and an intermediate conductive layer is disposed between the pair of lines in plan view.
In the sixth aspect, even when the second heat generating part has a plurality of lines extending in the circumferential direction, the intermediate conductive layer (long in the circumferential direction) can be easily disposed between the pair of lines.

(7) A seventh aspect of the present invention is an electrostatic chuck including the heating member according to any one of the first to sixth aspects and having an electrostatic electrode on an insulating substrate.
The electrostatic chuck can attract and heat the workpiece.

In the present invention, the following configurations (a) and (b) can also be employed.
(A) The second heat generating portion is a heating member having a line extending in the circumferential direction in the plan view.

(B) A heating member having a configuration in which the plurality of heating elements are arranged in the circumferential direction in the plan view as a configuration of at least the first heating unit among the first heating unit and the second heating unit.
<Each configuration of the present invention will be described below>
The circumferential direction is a direction that turns around the center of the insulating substrate in plan view. Here, the center of the insulating substrate means the center of gravity, and when the insulating substrate is circular, it means the center of the circle. That is, when the insulating substrate is circular, the circumferential direction means the circumferential direction.

  The radial direction is a direction from the center of the insulating substrate toward the outer periphery in plan view. Here, the center of the insulating substrate means the center of gravity, and when the insulating substrate is circular, it means the center of the circle. That is, when the insulating substrate is circular, the radial direction means the radial direction.

-Ceramics or resin can be used as the material for the insulating substrate.
Examples of the ceramic include a material mainly composed of aluminum oxide (alumina), aluminum nitride, zirconium oxide (zirconia), silicon carbide, or the like (50% by mass or more in the ceramic). In addition to the main component, for example, a rare earth compound may be added.

As the resin, polyimide, fluorine resin, or the like can be used. Examples of the insulating substrate include a ceramic ceramic substrate and a resin resin substrate.
-A main surface is the surface which makes the edge part in the thickness direction of a board | plate material (board | substrate).

The intermediate conductive layer, internal wiring layer, via, and terminal pad are conductive portions made of, for example, tungsten or molybdenum.
The via is a member that extends in the thickness direction of the insulating substrate and connects conductive portions. Moreover, as a terminal part (having electroconductivity), the structure etc. which joined the terminal pin to the terminal pad are employable, for example.

  The heat generating portion is a resistance heating element that generates heat when energized, and examples of the material of the heating element include tungsten, tungsten carbide, molybdenum, molybdenum carbide, tantalum, and platinum.

  -Examples of the material of the electrostatic electrode include tungsten and molybdenum.

FIG. 3 is a perspective view showing a partially broken electrostatic chuck of the embodiment. It is sectional drawing which fractures | ruptures the electrostatic chuck of embodiment and shows the one part in the thickness direction. It is a top view which shows the 1st heat generating body and heating area | region of the 1st heat generating part of a ceramic heater. It is a top view which shows the 2nd heat generating body and heating area | region of the 2nd heat generating part of a ceramic heater. It is sectional drawing which fractures | ruptures a ceramic heater in the thickness direction and shows a 1st wiring part and the surrounding structure. It is a top view which shows arrangement | positioning of the line of the intermediate | middle conductive layer and 2nd heat-emitting part in the 2nd plane of a ceramic heater. It is sectional drawing which shows the structure of the intermediate | middle conductive layer and via | via in the XX cross section of FIG. The modification of other embodiment is shown typically, (a) is sectional drawing which fractures | ruptures the electrostatic chuck of modification 1 in the thickness direction, (b) is the electrostatic chuck of modification 2 in the thickness direction Sectional drawing shown by fracture | rupture, (c) is sectional drawing which fractures | ruptures and shows the electrostatic chuck of the modification 3 in the thickness direction.

[1. Embodiment]
Here, as an embodiment, for example, an electrostatic chuck capable of attracting and holding a semiconductor wafer is taken as an example.
[1-1. overall structure]
First, the structure of the electrostatic chuck of this embodiment will be described.

  As shown in FIG. 1, the electrostatic chuck 1 of the present embodiment is an apparatus that adsorbs a semiconductor wafer 3 that is a workpiece on the upper side of FIG. 1, and includes a ceramic heater (heating member) 5, a metal base 7, and the like. Are laminated and joined by the adhesive layer 9.

  The upper surface (upper surface: adsorption surface) of the ceramic heater 5 in FIG. 1 is the first main surface A, and the lower surface is the second main surface B. Further, the upper surface of the metal base 7 is the third main surface C, and the lower surface is the fourth main surface D.

  Among these, the ceramic heater 5 has a disk shape and is composed of a ceramic substrate (insulating substrate) 17 provided with an adsorption electrode (electrostatic electrode) 11, a first heat generating portion 13, a second heat generating portion 15, and the like. . The adsorption electrode 11, the first heat generating part 13, and the second heat generating part 15 are embedded in the ceramic substrate 17.

  The metal base 7 has a disk shape larger in diameter than the ceramic heater 5 and is joined to the ceramic heater 5 coaxially. The metal base 7 is provided with a flow path (cooling path) 19 through which a cooling fluid (refrigerant) flows in order to cool the ceramic substrate 17 (and thus the semiconductor wafer 3). As the cooling fluid, for example, a cooling liquid such as a fluorinated liquid or pure water can be used.

  The electrostatic chuck 1 is provided with a plurality of lift pin holes 21 or the like into which lift pins (not shown) are inserted so as to penetrate the electrostatic chuck 1 in the thickness direction. The lift pin hole 21 is also used as a cooling gas flow path (cooling gas hole) supplied to the first main surface A side to cool the semiconductor wafer 3.

  In addition to the lift pin holes 21, a cooling gas hole (not shown) may be provided. As the cooling gas, for example, an inert gas such as helium gas or nitrogen gas can be used.

Next, each configuration of the electrostatic chuck 1 will be described in detail with reference to FIG.
<Ceramic heater>
As schematically shown in FIG. 2, the ceramic heater 5 (and hence the ceramic substrate 17) has a third main surface C of the metal base 7 on the second main surface B side by an adhesive layer 9 made of indium, for example. It is joined to the side.

  The ceramic substrate 17 is formed by laminating a plurality of ceramic layers 22 (see FIG. 5), and is an alumina sintered body mainly composed of alumina. The alumina sintered body is an insulator (dielectric).

  Inside the ceramic substrate 17, as will be described in detail later from above in FIG. 2, a plurality of first heating elements 23 and second heating parts 15 constituting the adsorption electrode 11, the first heating part 13 are configured. A plurality of second heating elements 25 and the like are arranged.

Among these, the adsorption electrode 11 is electrically connected to a known electrode terminal (not shown) for applying a voltage.
The plurality of first heating elements 23 are electrically connected to the plurality of first power feeding terminals 29, respectively, and the plurality of second heating elements 25 are connected to the plurality of second power feeding terminals 31. , Each is electrically connected.

  Specifically, each first heating element 23 is connected to each corresponding first power feeding terminal 29 via a first wiring portion 33 and a first terminal portion 35 so that the temperature can be controlled independently. Yes. The first terminal portion 35 includes a terminal pad 37, and the first power supply terminal 29 is joined to the terminal pad 37.

  On the other hand, each second heating element 25 is connected to each corresponding second power feeding terminal 31 via the second wiring portion 39 and the second terminal portion 41 so that the temperature can be controlled independently. . The second terminal portion 41 includes a terminal pad 43, and the second power feeding terminal 31 is joined to the terminal pad 43.

The first and second wiring portions 33 and 39 and the terminal pads 37 and 43 are made of, for example, tungsten.
The first heating element 23 is connected at both ends to a pair of first power supply terminals 29, but in FIG. 2, only one first power supply terminal 29 connected to one first heating element 23 is used. Is shown. Similarly, both ends of the second heat generating element 25 are connected to a pair of second power supply terminals 31, but in FIG. 2, one second power supply terminal 31 connected to one second heat generating element 25. Only shows.

<Metal base>
The metal base 7 is made of metal made of aluminum or an aluminum alloy. In addition to the cooling path 19 and the lift pin hole 21, the metal base 7 is formed with through holes 45 in which the electrode terminals and the power supply terminals 29 and 31 are arranged.

  An internal hole extending from the fourth main surface D to the inside of the ceramic heater 5 is provided on the fourth main surface D side of the electrostatic chuck 1 so as to accommodate the power supply terminals 29 and 31 and the like. A plurality of 47 are provided, and the through hole 45 of the metal base 7 constitutes a part of the internal hole 47.

In addition, an insulating cylinder 49 having electrical insulation is disposed in the inner hole 47 that accommodates the power supply terminals 29 and 31 and the like so as to surround the outer periphery of the power supply terminals 29 and 31 and the like.
<Adsorption electrode>
The adsorption electrode 11 is composed of, for example, an electrode having a circular planar shape. When the electrostatic chuck 1 is used, a DC high voltage is applied to the adsorption electrode 11, thereby generating an electrostatic attractive force (adsorption force) for adsorbing the semiconductor wafer 3. It is used to adsorb and fix the semiconductor wafer 3. In addition to the above, various known configurations (monopolar or bipolar electrodes, etc.) can be employed for the adsorption electrode 11. The adsorption electrode 11 is made of a conductive material such as tungsten.

<First heating part and second heating part>
Next, the 1st heat generating part 13 and the 2nd heat generating part 15 are demonstrated.
The second heat generating unit 15 is a main heater that generates a larger amount of heat than the first heat generating unit 13, and the first heat generating unit 13 is a sub-heater. The first and second heating elements 23 and 25 are resistance heating elements made of a metal material (such as tungsten) that generates heat when voltage is applied and current flows.

  As shown in FIG. 2, each first heating element 23 of the first heat generating portion 13 is on the same plane (a virtual plane that is a virtual plane) on the second main surface B side (downward in FIG. 2) from the adsorption electrode 11. 1 plane H1: see FIG. 3).

On the other hand, each 2nd heat generating body 25 of the 2nd heat generating part 15 is the same plane between the 1st heat generating part 13 and the 2nd main surface B (2nd plane H2 which is a virtual plane: refer to Drawing 4). Is placed on top.
Accordingly, the first heat generating portion 13 and the second heat generating portion 15 are arranged so as to be overlapped in a plan view as viewed from the thickness direction of the ceramic substrate 17 (and hence the electrostatic chuck 1).

Note that the number and shape of the heating elements 23 and 25 are different between the first heating element 23 of the first heating element 13 and the second heating element 25 of the second heating element 15.
Hereinafter, each heat generating part 13 and 15 will be described in detail.

First, the arrangement of the plurality of first heating elements 23 of the first heating unit 13 on the first plane H1 will be described with reference to FIG.
The ceramic substrate 17 is provided with a plurality of heating zones 51 concentrically in a plan view so that each region in the first plane H1 can be heated (and thus temperature controlled).

  In each heating zone 51, one or a plurality of heating regions 53 are set. In each heating region 53, a first heating element 23 (substantially circular or substantially U-shaped) is arranged corresponding to the shape of each heating region 53. In FIG. 3, only a part of the first heating elements 23 is shown.

Next, the arrangement of the plurality of second heating elements 25 of the second heating portion 15 on the second plane H2 will be described with reference to FIG.
The ceramic substrate 17 is provided with a plurality of heating zones 61 concentrically in plan view so that each region in the second plane H2 can be heated (and thus temperature controlled).

In each heating zone 61, one or a plurality of heating regions 63 are set. In each heating region 63, a second heating element 25 (substantially circular or substantially U-shaped) is arranged corresponding to the shape of each heating region 63.
[1-2. Configuration of first wiring section]
Next, the structure of the 1st wiring part 33 which is the principal part of this embodiment is demonstrated.

As shown in FIG. 5, the first wiring part 33 is a conductive part that electrically connects each first heating element 23 and each terminal part 35 (and thus the terminal pad 37).
The first wiring portion 33 includes a via 65a, an internal wiring layer 67a, a via 65b, an intermediate conductive layer 69, a via 65c, an internal wiring layer 67b, and a via 65d from above in FIG. The vias 65a to 65d are collectively referred to as the via 65, and the internal wiring layers 67a and 67b are collectively referred to as the internal wiring layer 67.

  Among these, the via 65a connects the first heating element 23 arranged in the first plane H1 and the internal wiring layer 67a arranged in parallel to the first plane H1, and the via 65b is connected to the internal wiring layer 67a and the first wiring H67. The intermediate conductive layer 69 arranged on the two planes H2 is connected. The via 65c connects the intermediate conductive layer 69 and the internal wiring layer 67b arranged in parallel with the second plane H2, and the via 65d connects the internal wiring layer 67b and the terminal pad 37.

The via 65, the internal wiring layer 67, and the intermediate conductive layer 69 are made of, for example, tungsten.
Here, the intermediate conductive layer 69 will be described in detail.
The intermediate conductive layer 69 is disposed in a region (gap region K) where the second heat generating element 25 is not disposed so as not to contact the second heat generating element 25 on the second plane H2.

  Specifically, as shown in FIG. 6, a large number of intermediate conductive layers 69 are arranged along the second plane H <b> 2, as in the second heating element 25, in plan view. That is, a large number of intermediate conductive layers 69 are arranged in a line along the circumferential direction (circumferential direction: arrow S direction) of the ceramic substrate 17.

  The intermediate conductive layer 69 has a length along the circumferential direction perpendicular to the radial direction from the length along the radial direction (radial direction) of the ceramic substrate 17 (length in the vertical direction in FIG. 6) in plan view. The length (the length in the left-right direction in FIG. 6) has a longer shape (oval shape). The length in the circumferential direction is 2 mm, for example, and the length in the radial direction is 1 mm, for example.

  Therefore, the intermediate conductive layer 69 has its long (long dimension) longitudinal direction in the gap region K between the plurality of linear portions (lines 25a) extending in the circumferential direction of the second heat generating element 25. It arrange | positions along with the circumferential direction so that the line 25a of the body 25 may be followed (that is, in parallel).

In FIG. 6, some of the intermediate conductive layers 69 among the many intermediate conductive layers 69 are shown.
As shown in FIG. 7, a plurality of vias 65 are connected to the intermediate conductive layer 69. Specifically, two vias 65b are connected to the first main surface A side (upper side in FIG. 7) of the intermediate conductive layer 69 along the longitudinal direction (left-right direction in FIG. 7). Similarly, two vias 65c are connected along the longitudinal direction on the second main surface B side of the intermediate conductive layer 69 (downward in FIG. 7).
[1-3. Production method]
Next, a method for manufacturing the electrostatic chuck 1 of the present embodiment will be briefly described.

(1) As a raw material of the ceramic substrate 17, the main components of Al ₂ O ₃ : 92 wt%, MgO: 1 wt%, CaO: 1 wt%, and SiO ₂ : 6 wt% are mixed to form a ball mill. Then, after wet grinding for 50 to 80 hours, dehydrated and dried.

(2) Next, a solvent or the like is added to the powder and mixed with a ball mill to form a slurry.
(3) Next, the slurry is degassed under reduced pressure, and then poured into a flat plate shape and gradually cooled to emit the solvent, thereby forming each alumina green sheet (corresponding to each ceramic layer 22).

Then, for each alumina green sheet, a space that becomes the lift pin hole 21 and the like, and further, a through hole that becomes the via 65 is opened at a necessary place.
(4) Further, a tungsten powder is mixed in the raw material powder for the alumina green sheet to form a slurry to obtain a metallized ink.

  (5) Then, in order to form the adsorption electrode 11, the first and second heating elements 23 and 25, the terminal pad 37, the internal wiring layer 67, the intermediate conductive layer 69, etc., the metallized ink is used for the adsorption. Each pattern is formed on the alumina green sheet corresponding to the formation location of the electrode 11, the first and second heating elements 23 and 25, the terminal pad 37, the internal wiring layer 67, the intermediate conductive layer 69, and the like by a normal screen printing method. Print. In addition, in order to form the via 65, the through hole is filled with metallized ink.

(6) Next, the alumina green sheets are aligned so that necessary spaces such as lift pin holes 21 are formed, and thermocompression-bonded to form a laminated sheet.
(7) Next, each thermocompression-bonded laminated sheet is cut into a predetermined shape (that is, a disc shape).

(8) Next, each cut laminated sheet is fired in a reducing atmosphere in the range of 1400 to 1600 ° C. (for example, 1550 ° C.) for 5 hours (main firing) to produce each alumina sintered body. .
(9) After firing, necessary processing such as processing on the first main surface A side is performed on each alumina sintered body to produce the ceramic substrate 17.

(10) Separately, the metal base 7 is manufactured. Specifically, the metal base 7 provided with the through holes 45 and the like is formed by cutting the metal plate.
(11) Next, the metal base 7 and the ceramic substrate 17 are joined and integrated.

(12) Thereafter, a member for supplying power is attached to complete the electrostatic chuck 1.
[1-4. effect]
Next, the effect of this embodiment will be described.

  In the present embodiment, the intermediate conductive layer 69 has a shape in which the length along the circumferential direction of the ceramic substrate 17 is longer than the length along the radial direction of the ceramic substrate 17 in plan view. In the two planes H <b> 2), even when the gap region K without the second heat generating portion 15 (and hence the second heating element 25) is narrow in the radial direction (the dimension is short), the intermediate conductive layer 69 is easily disposed in the gap region K. can do.

  In addition, in the present embodiment, a large number of first heating elements 23 are provided. Therefore, it is necessary to provide a large number of configurations for supplying power to the large number of first heating elements 23. That is, by using the intermediate conductive layer 69 having a shape and arrangement), a large number of intermediate conductive layers 69 can be easily arranged in the gap region K having a narrow radial direction.

  That is, between the plurality of lines 25a of the second heating element 25 (specifically, when the distance between the lines 25a is narrow), the longitudinal direction of each intermediate conductive layer 69 is arranged in the direction along the line 25a, so Layer 69 can be disposed along line 25a.

Furthermore, in the present embodiment, the plurality of vias 65 can be easily connected to the intermediate conductive layer 69 by the configuration in which the vias 65 are arranged along the circumferential direction (that is, the longitudinal direction of the intermediate conductive layer 69).
[2. Other Embodiments]
It goes without saying that the present invention is not limited to the above-described embodiment, and can be implemented in various modes without departing from the present invention.

(1) For example, the intermediate conductive layer is not limited to the shape of the above embodiment, and various shapes within the scope of the present invention can be adopted.
(2) Further, the number, shape, and the like of the internal wiring layers are not limited to the above embodiment, and for example, the internal wiring layers can be omitted.

(3) In the embodiment, the power supply terminal is joined to the terminal pad. However, another conductive member (for example, a lead wire) may be joined to the terminal pad.
Alternatively, a terminal pin may be joined to the terminal pad, and the terminal pin may be connected to a connector (having an insertion hole into which the terminal pin is inserted).

  (4) Also, for example, as shown in FIG. 8A, for example, in the first modification, for example, the second heat generating portion 15 includes a plurality of layers (for example, the upper layer 15a on the first main surface A side and the first layer 15a arranged in the thickness direction). 2 layers of the lower layer 15b on the main surface B side. Moreover, you may comprise the 1st heat generating part 13 by multiple layers.

  (5) Further, as shown in Modification 2 in FIG. 8B, the present invention can also be applied to the electrostatic chuck 1 that does not include the metal base 7. That is, the present invention can also be applied to the electrostatic chuck 1 including the ceramic heater 5 and the adsorption electrode 11, the first heat generating portion 13, and the second heat generating portion 15.

(6) Moreover, the present invention can be applied to a ceramic heater that is not an electrostatic chuck.
For example, as shown in Modification 3 in FIG. 8C, the present invention can be applied to the ceramic heater 5 provided with the first heat generating part 13 and the second heat generating part 15 in the ceramic substrate 17 as in the above embodiment.

(7) Various insulating substrates such as a ceramic substrate and a resin substrate can be adopted as the insulating substrate.
(8) The configurations of the embodiments can be combined as appropriate.

DESCRIPTION OF SYMBOLS 1 ... Electrostatic chuck 5 ... Ceramic heater 11 ... Electrode for adsorption (electrostatic electrode)
DESCRIPTION OF SYMBOLS 13 ... 1st heat generating part 15 ... 2nd heat generating part 17 ... Ceramic substrate 23 ... 1st heat generating body 25 ... 2nd heat generating body 35, 41 ... Terminal part 37, 43 ... Terminal pad 65, 65a, 65b, 65c, 65d ... Via 67, 67a, 67b ... Internal wiring layer 69 ... Intermediate conductive layer

Claims (7)

An insulating substrate having a first main surface on which a workpiece is mounted and a second main surface opposite to the first main surface and having electrical insulation; and an insulating substrate disposed inside the insulating substrate. A heating part that generates heat when energized and a terminal part provided on the second main surface of the insulating substrate;
In the heating member comprising, as the heat generating portion, a first heat generating portion disposed inside the insulating substrate, and a second heat generating portion disposed on the second main surface side of the first heat generating portion,
An intermediate conductive layer is arranged along the direction of the virtual plane in a region without the second heat generation part in the virtual plane along the first main surface where the second heat generation part is arranged, The first heat generating part and the terminal part are electrically connected via the intermediate conductive layer,
The intermediate conductive layer has a shape in which the length along the circumferential direction of the insulating substrate is longer than the length along the radial direction of the insulating substrate in a plan view when the insulating substrate is viewed in the thickness direction. A heating member. At least the first heat generating part is composed of a plurality of heat generating elements whose temperature can be adjusted independently, and the terminal part is provided with a plurality of terminal pads respectively electrically connected to the plurality of heat generating elements. ,
The region without the second heat generating portion includes a plurality of the intermediate conductive layers along the direction of the virtual plane,
The plurality of heating elements of the first heating unit and the plurality of terminal pads are electrically connected to each other through any of the plurality of intermediate conductive layers. Heating member.   The heating member according to claim 1, wherein a plurality of the intermediate conductive layers are arranged along the circumferential direction in the plan view.   The intermediate conductive layer is connected to a plurality of vias on at least one side in the thickness direction, and the plurality of vias are arranged along the circumferential direction in the plan view. The heating member according to any one of claims 1 to 3.   An internal wiring layer electrically connected to the first heat generating portion and the intermediate conductive layer via vias is further provided between the first heat generating portion and the intermediate conductive layer. The heating member according to any one of claims 1 to 4.   The second heat generating portion includes a plurality of lines extending in the circumferential direction, and the intermediate conductive layer is disposed between the pair of lines in the plan view. The heating member according to any one of the above.   An electrostatic chuck comprising the heating member according to claim 1, and an electrostatic electrode provided on the insulating substrate.