JP2019135741A - Semiconductor device, method for manufacturing the same, and power converter - Google Patents

Abstract

To provide a small-sized semiconductor device having an incorporated circuit board.SOLUTION: A semiconductor device comprises: a heat conductive member 1 having a first hole 8; a metal member 2 provided on the heat conduction member 1, mounting a semiconductor element 4 and having a second hole 81 at a position corresponding to above the first hole 8; a circuit board 6 arranged above the metal member 2 and having a third hole 11 at a position corresponding to above the second hole 81; and a sealing member 7 including the circuit board 6, charging the first hole 8, the second hole 81 and the third hole 11 to integrally seal the heat conductive members 1, the metal member 2 and the circuit board 6.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a mold type semiconductor device sealed with a sealing resin, a method for manufacturing the same, and a power conversion device including the semiconductor device.

  Generally, a semiconductor device is sealed with a resin for protecting a semiconductor element and insulating a wiring circuit. 2. Description of the Related Art Conventionally, a mold type semiconductor device in which a semiconductor element and a wiring circuit are integrally resin-sealed using a mold is known. The mold type semiconductor device is superior in productivity and can be reduced in size compared to a case type semiconductor device in which a case is filled with a low-elasticity resin to protect a semiconductor element.

  However, in a mold type semiconductor device, a resin such as a lead frame that forms a wiring circuit at the time of resin sealing is sandwiched between molds and resin molding is performed. Therefore, a complicated electronic circuit can be formed only by a lead frame. was difficult.

  Therefore, as a conventional semiconductor device, a mold type semiconductor device (for example, Patent Document 1) sealed including a control circuit substrate has been studied. In addition, a mold type semiconductor device (for example, Patent Document 2) that supports a control circuit board using a pin hole provided in an outer peripheral portion rather than a heat sink of a lead frame has been studied.

JP 2014-22444 A JP 2014-212208 A

  However, in the conventional semiconductor device, in order to seal the control circuit substrate, the control circuit substrate is supported in a hollow state by sandwiching a part of the control circuit substrate with a mold, and resin molding is performed. . The support provided on the outer periphery of the control circuit board protrudes from the mold, and the support part is sandwiched between the upper mold and the lower mold to restrict the movement of the control circuit board. Molded (Patent Document 1). Further, in a conventional semiconductor device, resin molding is performed in a state where a control circuit board is supported using a pin hole provided in an outer peripheral portion rather than a heat sink of a lead frame (Patent Document 2). For this reason, the semiconductor device is manufactured with the support provided on the outer periphery of the control circuit board protruding from the outer shape of the package of the semiconductor device or with the pin hole provided on the outer periphery of the heat sink. In some cases, the package size of the semiconductor device becomes large and it is impossible to cope with downsizing.

  The present invention has been made to solve the above-described problems, and an object thereof is to obtain a small mold type semiconductor device in which a circuit board is disposed in a hollow space.

  A heat conducting member having a first hole, a metal member provided on the heat conducting member, mounted with a semiconductor element, and having a second hole at a corresponding position above the first hole; and disposed above the metal member. A circuit board having a third hole at a corresponding position above the second hole, and enclosing the circuit board, filling the first hole, the second hole, and the third hole, a heat conducting member, a metal member, and the circuit board And a sealing member that integrally seals the semiconductor device.

  According to the semiconductor device of the present invention, since the support portion provided on the outer peripheral portion of the circuit board is not provided, the semiconductor device can be reduced in size.

1 is a schematic cross-sectional structure diagram showing a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional structure view taken along one-dot chain line AA of FIG. It is a cross-sectional structure schematic diagram in the end part vicinity of the semiconductor device in Embodiment 1 of this invention. 1 is a schematic plan view structure in the vicinity of an end portion of a semiconductor device according to a first embodiment of the present invention. It is a structure schematic diagram which shows the circuit board of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the other semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the other semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the other semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the other processed hole shape of the circuit board of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing method of the other semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the other processed hole shape of the circuit board of the semiconductor device in Embodiment 1 of this invention. It is a cross-sectional structure schematic diagram which shows the semiconductor device in Embodiment 2 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is a cross-sectional structure schematic diagram which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is a cross-sectional structure schematic diagram which shows the other manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is a cross-sectional structure schematic diagram which shows the semiconductor device in Embodiment 3 of this invention. It is a cross-sectional structure schematic diagram in the end part vicinity of the semiconductor device in Embodiment 3 of this invention. It is a block diagram which shows the structure of the power conversion system to which the power converter device in Embodiment 4 of this invention is applied.

  First, the overall configuration of the semiconductor device of the present invention will be described with reference to the drawings. The drawings are schematic and do not reflect the exact size of the components shown. Moreover, what attached | subjected the same code | symbol is the same or it corresponds, This is common in the whole text of a specification.

Embodiment 1 FIG.
A semiconductor device according to Embodiment 1 of the present invention will be described with reference to FIGS.

  FIG. 1 is a schematic cross-sectional structure diagram showing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view taken along one-dot chain line AA of the semiconductor device according to the first embodiment of the present invention.

  In FIG. 1, a semiconductor device 100 includes a heat conducting member 1, a lead frame 2 that is a metal member, solder 3 that is a bonding material, a semiconductor element 4, a bonding wire 5, a circuit board 6, and a sealing resin 7 that is a sealing member. It has. The heat conducting member 1 includes a through hole 8 that is a first hole, and the lead frame 2 includes a through hole 81 that is a second hole. Furthermore, the circuit board 6 includes a processing hole 11 that is a third hole. The circuit board 6 is encapsulated in the sealing resin in this cross-sectional direction. Furthermore, the lead frame 2 includes a lead terminal portion that is a metal terminal portion protruding from the side surface of the sealing resin 7.

  In FIG. 2, in this cross-sectional direction (cross-dotted line AA cross-section in FIG. 1), both the heat conducting member 1 and the circuit board 6 are encapsulated in the sealing resin 7. There is no part protruding outside.

  1 and 2, the heat conducting member 1 includes a metal foil 1a and an insulating sheet 1b that is an insulating layer formed on the upper surface of the metal foil 1a. The insulating sheet 1b has a role of insulating the metal foil 1a and the lead frame 2 and radiating heat generated in the semiconductor element 4 to the metal foil 1a via the insulating sheet 1b. As the metal foil 1a, a high thermal conductive member such as a copper plate, an aluminum plate, or a copper foil is used.

  The insulating sheet 1b is made of a thermosetting resin such as an epoxy resin, and a highly conductive filler such as silica, alumina, or boron nitride is mixed therein.

  The heat conducting member 1 has at least three through holes 8 in the plane. In the semiconductor device 100, the through hole 8 is filled with the sealing resin 7. The size of the through-hole 8 is desirably 0.5 mm or more (Φ0.5 mm or more) because it is necessary to insert a support pin 13 that can move the mold during manufacturing as will be described later.

  The through-hole 8 may be formed at the same time when the outer shape is processed by punching of the heat conducting member 1 or may be subjected to processing such as wire cutting separately. The heat conducting member 1 is resin-sealed by exposing the lower surface of the metal foil 1a on the lower surface side, and the surface of the lower surface side of the metal foil 1a and the surface of the sealing resin 7 filled in the through holes 8 are on the same plane. It is molded to become

  On the heat conducting member 1, a lead frame 2 on which a wiring circuit is formed is provided. The lead frame 2 is disposed on the insulating sheet 1 b of the heat conducting member 1. On the wiring circuit of the lead frame 2, the back surface electrode of the semiconductor element 4 is bonded via the solder 3 that is a bonding material. The surface electrode of the semiconductor element 4 and the lead frame 2 are electrically connected by a bonding wire 5 at a predetermined position of the lead frame 2.

  The lead frame 2 has at least three or more through holes 81 in the plane at corresponding positions above the through holes 8 of the heat conducting member 1. In the semiconductor device 100, the through hole 81 is filled with the sealing resin 7. The size of the through-hole 81 is preferably 0.5 mm or more (Φ0.5 mm or more) because it is necessary to insert the support pin 13 provided in the mold at the time of manufacture as will be described later.

  FIG. 3 is a schematic cross-sectional structure diagram in the vicinity of the end portion of the semiconductor device according to the first embodiment of the present invention. FIG. 4 is a schematic plan view structure in the vicinity of the end portion of the semiconductor device according to the first embodiment of the present invention. In the figure, as the lead frame 2, for example, a copper plate having a thickness of about 0.6 mm is used. A wiring circuit is formed on the lead frame 2 by press molding. Further, the wiring circuit of the lead frame 2 has a step portion 9. The step portion 9 of the lead frame 2 is not joined to the heat conducting member 1 and becomes a portion into which the sealing resin 7 enters. The step portion 9 of the lead frame 2 has a structure for suppressing dielectric breakdown along the interface between the metal foil 1 a of the heat conducting member 1 and the sealing resin 7. The step portion 9 of the lead frame 2 is a step between the lead frame 2 and the heat conducting member 2.

  The step portion 9 of the lead frame 2 is formed, for example, by performing a half punching process. The height of the step 9 of the lead frame 2 (the distance from the upper surface of the insulating sheet 1b to the lower surface of the lead frame 2) is, for example, 0.1 mm or more and 0.3 mm or less, which is half the thickness of the lead frame 2. . By setting it as 0.1 mm or more, it can suppress that a void generate | occur | produces in the sealing resin 7 with which the space between the heat conductive member 1 and the lead frame 2 is filled.

  Further, the strength can be ensured by setting the distance from the insulating sheet 1 b, which is a step in the stepped portion 9, to 0.3 mm or less, which is half the thickness of the lead frame 2. Furthermore, by providing the stepped portion 9 and filling the stepped portion 9 with the sealing resin 7, the dielectric strength between the metal foil 1a of the heat conducting member 1 and the lead frame 2 can be improved.

  Further, the lead frame 2 forms a gap 10 with a range within 0.1 mm outside from the periphery (outer periphery) of the through-hole 8 formed in the heat conducting member 1 as a prohibited area. The gap 10 is set to be equal to or longer than the insulation distance between the lead frame 2 and the metal foil 1a. The minimum insulation distance is the distance from the thickness of the insulating sheet 1 b and the peripheral portion (outer peripheral portion) of the through hole 8 to the peripheral portion (outer peripheral portion) of the through hole 81. For this reason, the dielectric breakdown between the lead frame 2 and the metal foil 1a is suppressed by setting the distance (length) of the gap 10 to be equal to or greater than the sum of the thickness of the insulating sheet 1b and the distance to the outer peripheral portion of the through hole 81. be able to. A wiring circuit pattern composed of the lead frame 2 is not disposed in the gap 10.

  Here, the distance from the outer peripheral end of the through hole 8 to the outer peripheral end of the through hole 81 is the gap 10. For this reason, the through hole 81 is a hole having a larger radius than the through hole 8 by the gap 10. Further, the inside of the through hole 8 and the through hole 81 is filled with the sealing resin 7. For this reason, it is possible to suppress the dielectric breakdown between the lead frame 2 and the metal foil 1a at the site where the through hole 8 and the through hole 81 are formed.

  The semiconductor element 4 includes a diode used in a converter unit that converts input AC power into DC power, a bipolar transistor used in an inverter unit that converts DC power into AC power, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Fielder). For example, an Effect Transistor) and a GTO (Gate Turn-Off Thyristor).

  As the bonding wire 5, for example, an aluminum wire or a copper wire can be used. Since the bonding wire 5 is used not only for electrical connection with the circuit board 6 but also for supporting the circuit board 6, the bonding wire 5 is also required to have rigidity for supporting the circuit board 6. . For this reason, the bonding wire 5 needs to have a certain thickness and number. Moreover, although the example which used the solder 3 was shown as a joining material of the lead frame 2 and the semiconductor element 4, it is not restricted to the solder 3, For example, a silver paste can be used.

  The circuit board 6 is disposed above the lead frame 2 in the semiconductor device 100 and is electrically connected to the lead frame 2 by bonding wires 5. Further, as described above, the circuit board 6 is supported by the bonding wire 5 so as to be hollow above the lead frame 2.

  The circuit board 6 includes a resin substrate on which a wiring pattern (not shown) is formed, and an electrical component (not shown) mounted on the wiring pattern on the resin substrate. For example, a resin substrate that is generally used for an electronic device having a thickness of 1.6 mm can be used, but the thickness of the resin substrate is not limited to this.

  Further, the heat resistance grade of the resin substrate is not limited to FR-4, and when high temperature operation of the element is assumed using silicon carbide (SiC) as the semiconductor element 4 mounted on the lead frame 2, etc. A resin substrate corresponding to FR-5 having a high heat resistance grade can also be used.

  The electrical parts are preferably mounted on both surfaces (upper and lower surfaces) of the circuit board 6, but may be mounted on one surface. Since electric parts are mounted on both surfaces of the circuit board 6, the difference in thermal expansion coefficient between the front and back surfaces (upper and lower surfaces) of the circuit board 6 against thermal stress generated by a temperature cycle or the like can be suppressed, and the rigidity becomes higher. Thereby, the curvature which generate | occur | produces in the circuit board 6 can be suppressed.

  In addition, by mounting electrical components on both surfaces (upper and lower surfaces) of the resin substrate, the area of the resin substrate can be suppressed to about half that of single-sided mounting, and the semiconductor device 100 can be downsized. The wiring pattern on the upper surface of the circuit board 6 and the lead frame 2 are connected to each other by the bonding wires 5 and are floating in the air due to the rigidity of the bonding wires 5 before resin sealing. Therefore, the lead frame 2 with the circuit board 6 can be put into the mold, and molding resin molding becomes possible.

  FIG. 5 is a structural schematic diagram showing a circuit board of the semiconductor device according to the first embodiment of the present invention. FIG. 6 shows a schematic top view of the circuit board 6 and a schematic cross-sectional structure taken along one-dot chain line BB in FIG. In the figure, the circuit board 6 has processing holes 11 penetrating the circuit board 6 in three directions. The processing hole 11 is an area into which a support pin 13 described later is inserted. The diameter of the processed hole 11 is different between the upper surface of the circuit board 6 that is the upper surface side of the semiconductor device 100 and the lower surface of the circuit board 6 that is the lead frame 2 side, and the processed hole 11 on the lower surface side of the circuit board 6. Is larger than the diameter of the processing hole 11 on the upper surface side of the circuit board 6. That is, when the cross-sectional structure schematic diagram in the dashed-dotted line BB of FIG. 5 is seen, the shape of the processing hole 11 is a trapezoid shape. Actually, the shape of the processing hole 11 is a truncated cone shape penetrating the upper and lower surfaces of the circuit board 6. Further, the diameter of the processing hole 11 on the upper surface side of the circuit board 6 is smaller than the diameter of the support pin 13. The processing hole 11 is provided at a corresponding position above the through hole 81 of the lead frame 2 in order to pass the support pin 13.

  By making the shape of the processed hole 11 into a truncated cone shape, the support pin 13 stops in the middle of the processed hole 11, so that the circuit board 6 can be supported by the support pin 13. The processing hole 11 is processed by drilling, milling, grinding, or the like, but does not particularly specify a processing method. The processing holes 11 are intended to support the circuit board 6 in a hollow state while maintaining parallelism when the mold is mounted. Therefore, the processing holes 11 are arranged at least at least three places, preferably at four places including the four corners of the circuit board 6. It is desirable that The heat conducting member 1 and the lead frame 2 are formed with through holes 8 and through holes 81 corresponding to the number of processed holes 11. Thus, the circuit board 6 can be supported horizontally by providing three or more processing holes 11.

  A through hole 8 is formed in the heat conducting member 1, a through hole 81 is formed in the lead frame 2, and a processed hole 11 is formed in the circuit board 6, and the through hole 8 and the through hole are passed through the support pin 13. 81 and the processing hole 11 are arranged on the same straight line in the direction perpendicular to the surface of the heat conducting member 1. The diameter of the through hole 8 of the heat conduction member 1 and the diameter of the processing hole 11 on the surface (lower surface) side facing the heat conduction member 1 of the circuit board 6 are the same size or the diameter of the processing hole 11 is larger. desirable.

  The sealing resin 7 is formed so that the lead frame 2, the heat conducting member 1, the semiconductor element 4, and the circuit board 6 are integrally sealed. In the first embodiment, the lower surface of the metal foil 1a of the heat conducting member 1 is not covered with the sealing resin 7 and is exposed to the outside.

  The sealing resin 7 functions as a case of the semiconductor device 100 while ensuring insulation between the sealed members. As a molding method of the sealing resin 7, for example, transfer molding, injection molding, compression molding, or the like can be used. Moreover, as a material of the sealing resin 7, for example, an epoxy resin or a phenol resin containing a filler can be used.

  Next, a method for manufacturing the semiconductor device 100 of the first embodiment configured as described above will be described.

  6 to 12 are schematic cross-sectional structure diagrams illustrating the manufacturing steps of the semiconductor device according to the first embodiment of the present invention. 6 to 12 are schematic cross-sectional structure diagrams showing each manufacturing process of the semiconductor device according to the first embodiment of the present invention. The semiconductor device 100 can be manufactured through the steps from FIG. 6 to FIG.

  First, as shown in FIG. 6, a heat conductive member 1 in which a metal foil 1 a and an insulating sheet 1 b are bonded together, a lead frame 2 in which a semiconductor element 4 is bonded and wired with bonding wires 5, and an electrical component on a wiring pattern. The mounted circuit board 6 is produced. The heat conducting member 1 is formed with a through hole 8 that penetrates the metal foil 1a and the insulating sheet 1b. In the lead frame 2, a through hole 81 is formed at a corresponding position above the through hole 8 in order to pass the support pin 13. The circuit board 6 is formed with processing holes 11 that penetrate the upper and lower surfaces of the circuit board 6. The processing hole 11 is formed at a corresponding position above the through hole 81 in order to pass the support pin 13. The outer peripheral portion of the through hole 81 is formed so as to be separated from the outer peripheral portion of the through hole 8 by a gap 10. After producing these, the lead frame 2 is mounted on the insulating sheet 1 b of the heat conducting member 1. Above the lead frame 2, a circuit board 6 that is connected to and supported by the lead frame 2 by a bonding wire 5 is disposed (base material preparation step). At this time, the through hole 8 of the heat conducting member 1 and the processed hole 11 of the circuit board 6 can pass through the support pins 13 so that they are on the same straight line perpendicular to the surface of the heat conducting member 1. The heat conducting member 1 and the circuit board 6 are disposed.

  Next, as shown in FIG. 7, after connecting the heat conducting member 1, the lead frame 2, and the circuit board 6, these are arranged in the lower mold 12 provided with the support pins 13 (the lower mold inner base material). Placement process). At this time, cylindrical support pins 13 projecting from the lower mold 12 to the inside of the mold are inserted from the lower mold 12 through the through holes 8 to the processing holes 11 of the circuit board 6, and the circuit board 6 is molded into the mold. It is supported hollow inside. The processing hole 11 is processed so that the diameter decreases from the surface facing the lead frame 2 toward the opposite surface, and the support pin 13 contacts the side surface of the processing hole 11 in the middle of the processing hole 11 ( The circuit board 6 can be supported. Further, the lower surface of the metal foil 1 a of the heat conducting member 1 is disposed in contact with the surface (inner upper surface) of the lower mold 12. The support pin 13 is designed to be movable during molding resin molding. The support pin 13 is pulled out together with the filling of the sealing resin 7, and finally the sealing resin 7 is inserted between the through hole 8 and the processed hole 11. Filled. For this reason, since the support pins 13 are moved in the mold, the members such as the bonding wires 5 are arranged at positions where they do not come into contact with the support pins 13. Here, the diameter of the support pin 13 is smaller than the diameter on the lower surface side of the circuit board 6 of the processing hole 11 having a truncated cone shape and larger than the diameter on the upper surface side of the circuit board 6. By supporting the circuit board 6 with the support pins 13, displacement of the circuit board 6 due to the injection pressure of the sealing resin 7 can be suppressed.

  Next, as shown in FIGS. 8 and 9, the upper mold 14 is arranged so that the lead terminal portion of the lead frame 2 is sandwiched between the lower mold 12 (upper mold installation step). By sandwiching the lead terminal portion of the lead frame 2 at the lead terminal fixing position provided in the upper die 14 and the lower die 12, the positional deviation of the lead frame 2 at the time of molding is suppressed, and the lead in the die The frame 2 can be fixed.

  Next, as shown in FIGS. 10 and 11, sealing is performed inside the mold surrounded by the upper mold 14 and the lower mold 12 and in which the heat conducting member 1, the lead frame 2, and the circuit board 6 are arranged. Resin 7 is filled (sealing member filling step). FIG. 10 schematically shows a state in the middle of filling the mold with the sealing resin 7. The sealing resin 7 is filled from an injection port provided on the left side of the mold, for example. FIG. 11 schematically shows a state after the inside of the mold is filled with the sealing resin 7 and then the support pins 13 are pulled out from the mold. After filling the sealing resin 7 into the mold, before the sealing resin 7 is cured, the support pins 13 are pulled out from the inside of the lower mold (support pin pulling step). After that, by pressurizing the inside of the mold, the sealing resin 7 is filled in the through hole 8, the through hole 81, and the processing hole 11 from which the support pin 13 has been pulled out, and the through hole 8, the through hole 81, and the processing hole are filled. 11 is embedded with a sealing resin 7 (in-mold re-pressurization (filling) step). For this reason, the improvement of insulation is obtained compared with the case where the through-hole 8, the through-hole 81, and the process hole 11 are not filled with the sealing resin 7. FIG.

  As a condition for filling (injecting) the sealing resin 7 into the mold, for example, the injection can be performed by operating at an injection speed of 1 mm / sec. At this time, the sealing resin 7 injected into the mold has such a viscosity that the support pin 13 can be pulled out through the lower mold. After pulling out the support pin 13, for example, by performing holding pressure at 10 MPa after injection, the sealing resin 7 can be refilled into the through hole 8, the through hole 81, and the processed hole 11. After the sealing resin 7 is filled, a curing process is performed. For example, the curing treatment conditions for the sealing resin 7 are performed at 150 ° C. for 2 hours (sealing member curing step). In this manner, the filled sealing resin 7 is cured by performing the curing process. Moreover, what is necessary is just to select suitably the hardening process conditions of the sealing resin 7 according to the material of the sealing resin 7, etc. FIG.

  The semiconductor device 100 shown in FIG. 12 can be manufactured through the above main manufacturing steps.

  FIG. 13 is a schematic cross-sectional structure diagram illustrating another manufacturing process of the semiconductor device according to the first embodiment of the present invention. In the manufacturing process of the semiconductor device 100 described above, when the upper mold 14 shown in FIG. 9 is arranged, the circuit board 6 is pressed by the pressing pins 15 from the upper mold 14 as shown in FIG. It is possible to suppress the floating of the circuit board 6 at the time of filling the mold with the stop resin 7.

  More specifically, as shown in FIG. 13, the pressing pin 15 protrudes from the upper mold 14 at a position in contact with the circuit board 6 at a position on the inner side of the processing hole 11 of the circuit board 6. The holding pin 15 is disposed. In this way, by arranging the pressing pin 15, even when the circuit board 6 is lifted only by the support pin 13 from the lower mold 12 at the time of molding, Lifting can be suppressed. Further, like the support pins 13 of the lower mold 12, the pressing pins 15 from the upper mold 14 are pulled out from the upper mold 14 after filling the mold with the sealing resin 7. Since the sealing resin 7 is filled in the portion where the pressing pin 15 is present after being pulled out, the portion where the pressing pin 15 is present does not remain after molding.

  Thereafter, the semiconductor device 100 can be manufactured through the steps shown in FIGS. Through such a manufacturing process, the circuit board 6 is included (embedded) inside the sealing resin 7, so that the mold resin molding is performed without exposing the circuit board 6 to the outer peripheral portion of the sealing resin 7. The For this reason, since the support part for supporting the circuit board 6 is eliminated, it is possible to use a region where the terminals of the lead frame 2 can not be disposed in the related art. The semiconductor device 100 that can be reduced in size with few restrictions is obtained. Note that the mark of the pressing pin 15 may be left on the upper surface side of the sealing resin 7 by intentionally leaving the pressing pin 15 from the upper mold 14 pressed against the circuit board 6.

  FIG. 14 is a schematic cross-sectional structure diagram showing another semiconductor device according to the first embodiment of the present invention. FIG. 15 is a schematic cross-sectional structure diagram showing another hole shape of the circuit board of the semiconductor device according to the first embodiment of the present invention. FIG. 16 is a schematic cross-sectional structure diagram illustrating another method for manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 17 is a schematic cross-sectional view showing another hole shape of the circuit board of the semiconductor device according to the first embodiment of the present invention.

  The shape of the processed hole 11 formed in the circuit board 6 may be a two-stage shape as shown in FIGS. Thus, when the processing hole 11 has a two-stage shape, the diameter of the hole on the upper surface side of the circuit board 6 is small, and the circuit board 6 is supported by contacting the upper portion of the support pin 13 at this portion. Further, a circular non-through hole as shown in FIGS. By making the depth of the processed hole 11 shallower than the thickness of the circuit board 6, a non-penetrating shape is obtained. Thus, when the shape of the processed hole 11 is a non-penetrating shape, the circuit board 6 is supported by contacting the upper part of the support pin 13 in the part where the processed hole 11 becomes non-penetrated. As described above, the shape of the processing hole 11 may be any shape as long as the support pin 13 is passed through the processing hole 11 and the support pin 13 is in contact with the processing hole 11 in the middle of the processing hole 11 to support the circuit board 6. The processing hole 11 having a simple shape can also be applied.

  In the semiconductor device 100 configured as described above, the through hole 8 is provided in the heat conducting member 1, the through hole 81 is provided in the lead frame 2, the processing hole 11 is provided in the circuit board 6, and the through hole 8 is penetrated. The hole 81 and the processed hole 11 are arranged on the same straight line in the direction perpendicular to the surface of the heat conducting member 1, the circuit board 6 is supported by the support pins 13, and the support part provided on the outer peripheral part of the circuit board 6 is eliminated. As a result, the semiconductor device can be miniaturized.

  Further, since the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the degree of freedom of arrangement of the lead portion of the lead frame 2 is widened, and the restriction of the arrangement of the terminal protruding outside from the sealing resin 7 can be eliminated. it can.

Embodiment 2. FIG.
The second embodiment is different in that the connection to the circuit board 6 used in the first embodiment is changed from the bonding wire 5 to the connection member 19. In the first embodiment, the bonding wire 5 that connects the lead frame 2 and the circuit board 6 has rigidity for supporting the circuit board 6. However, in the present embodiment, it is not necessary to support the circuit board 6. It is sufficient if the lead frame 2 and the circuit board 6 can be electrically connected. Thus, since the connection with the circuit board 6 is used as a connection member, the support portion provided on the outer peripheral portion of the circuit board 6 can be eliminated, and the semiconductor device can be downsized. Since other points are the same as those in the first embodiment, detailed description thereof is omitted.

  Even in such a case, the through hole 8 is provided in the heat conducting member 1, the through hole 81 is provided in the lead frame 2, the processed hole 11 is provided in the circuit board 6, and the through hole 8, the through hole 81, and the processed hole 11 are provided. Are arranged on the same straight line in the direction perpendicular to the surface of the heat conducting member 1, the circuit board 6 is supported by the support pins 13, and the support portion provided on the outer periphery of the circuit board 6 is eliminated. It can be downsized.

  FIG. 18 is a schematic cross-sectional structure diagram showing a semiconductor device according to the second embodiment of the present invention. In FIG. 18, a semiconductor device 200 includes a heat conducting member 1, a lead frame 2, a solder 3 as a bonding material, a semiconductor element 4, a bonding wire 5, a circuit board 6, a sealing resin 7 as a sealing member, and a connecting member 19. It has. The heat conducting member 1 includes a through hole 8 that is a first hole, and the lead frame 2 includes a through hole 81 that is a second hole. Further, the circuit board 6 includes a processing hole 11 as a third hole and a lead frame pressing pin hole 17 as a fourth hole.

  The sealing resin 7 has pin marks 18 on the upper surface. The connection between the lead frame 2 and the circuit board 6 is different from the first embodiment as long as the lead frame 2 and the circuit board 6 can be electrically connected to each other, and may be a bonding wire, a lead terminal, or the like. In the second embodiment, since it is not necessary to hold (support) the circuit board 6 in a hollow state, the connection member 19 does not need rigidity, and a method that allows the lead frame 2 and the circuit board 6 to be electrically connected is used. Even if a bonding wire is used, the number of wires to be connected can be reduced if it is electrically acceptable.

  The circuit board 6 is disposed above the lead frame 2 in the semiconductor device 200 and is electrically connected to the lead frame 2 by the connection member 19. The circuit board 6 has a processing hole 11 that penetrates the circuit board 6 vertically. The processing hole 11 is an upper surface of the circuit board 6 that is the upper surface side of the semiconductor device 200 and the circuit board 6 that is on the lead frame 2 side. The diameter of the processing hole 11 is different from the lower surface of the circuit board 6, and the diameter of the processing hole 11 on the lower surface side of the circuit board 6 is larger than the diameter of the processing hole 11 on the upper surface side of the circuit board 6. That is, when the sectional view is seen, the shape of the processed hole 11 is a trapezoidal shape. Actually, the shape of the processing hole 11 is a truncated cone shape penetrating the upper and lower surfaces of the circuit board 6. Further, the diameter of the processing hole 11 on the upper surface side of the circuit board 6 is smaller than the diameter of the support pin 13. Further, the connection member 19 is used for electrical connection between the lead frame 2 and the circuit board 6. For this reason, as the connecting member 19, a part of the lead frame 2 may be used, or the bonding wire 5 having a reduced number (no rigidity) may be used. For example, when the bonding wire 5 is used, the diameter of the bonding wire 5 is required to be approximately 400 μm in the first embodiment, but is approximately 100 μm in the second embodiment. Further, when the bonding wires 5 having the same diameter are used, the number of bonding wires 5 may be smaller in the second embodiment than in the first embodiment.

  Next, a method for manufacturing the semiconductor device 200 according to the second embodiment configured as described above will be described.

  Basically, the semiconductor device 200 can be manufactured through the steps of FIGS. 6 to 12 described in the first embodiment. In the second embodiment, the pressing pin 15 disposed on the upper mold 14 shown in FIG. 13 is used as the pressing pin 15 and the lead frame pressing pin 16, and the lead frame pressing pin hole 17 is provided in the circuit board 6. Is different.

  When the sealing resin 7 is filled into the mold, the sealing resin 7 may enter between the lead frame 2 and the insulating sheet 1b and the lead frame 2 may float. In order to suppress such floating of the lead frame 2, a lead frame pressing pin 16 having a diameter smaller than that of the pressing pin 15 is provided at the tip portion (lower part) of the pressing pin 15 of the circuit board 6, and the thin lead frame pressing force is reduced. The lead frame 2 may be pressed through the lead frame pressing pin hole 17 provided on the circuit board 6 with only the pins 16. Since the holding pin 15 and the lead frame holding pin 16 have an effect of preventing floating even if they are not completely in contact with the lead frame 2 or the circuit board 6, they are in contact with the circuit board 6 and the lead frame 2 at the time of molding. It does not have to be.

  A pin mark 18 is formed on the upper surface of the sealing resin 7 as the shape of the semiconductor device 200 after molding. This is a trace of the pressing pin 15 of the circuit board 6 or the lead frame 2 pressing pin 16 in the manufacturing process described later.

  FIG. 19 is a schematic cross-sectional structure diagram showing the manufacturing process of the semiconductor device in the second embodiment of the present invention. FIG. 20 is a schematic cross-sectional structure diagram showing the manufacturing process of the semiconductor device according to the second embodiment of the present invention. FIG. 21 is a schematic cross-sectional structure diagram showing the manufacturing process of the semiconductor device in the second embodiment of the present invention. FIG. 22 is a schematic cross-sectional structure diagram showing the manufacturing process of the semiconductor device in the second embodiment of the present invention. In the manufacturing process of the semiconductor device 100 described above, instead of placing the upper mold 14 shown in FIG. 13 and holding the circuit board 6 with the holding pins 15, as shown in FIGS. The lead frame pressing pin 16 is disposed in the lower part (lead frame 2 side), and the lead frame 2 can be pressed by the lead frame pressing pin 16 through the lead frame pressing pin hole 17 provided in the circuit board 6. At the same time, the circuit board 6 can be pressed by the pressing pin 15.

  Thereafter, as shown in FIG. 11, the sealing resin 7 is filled in the mold. After filling the mold with the sealing resin 7, as shown in FIG. 21, the support pins 13 are pulled out from the lower mold 12, and the lead frame pressing pins 16 are pulled out from the upper mold 14 (support pin pulling step). At this time, the pressing pin 15 of the circuit board 6 is left in the mold. After that, by pressurizing the inside of the mold, the sealing resin 7 is filled into the through hole 8 from which the support pin 13 has been pulled out, the processing hole 11 and the lead frame 2 pressing pin hole 17, and the through hole 8 and the processing hole are processed. The holes 11 are filled with the sealing resin 7 (in-mold re-pressurization (filling) step). As described above, the portion where the support pin 13 and the holding pin 16 of the lead frame 2 are located after being pulled out is filled with the sealing resin 7, so that the holding pin 13 and the lead frame 2 are pressed after molding. The place where the pin 16 was is not left. Since the portion where the pressing pin 15 of the circuit board 6 is provided is not filled with the sealing resin 7, a recess is formed on the upper surface side of the sealing resin 7 as the pin mark 18.

  After the sealing resin 7 is filled, a curing process is performed. For example, the curing treatment condition for the sealing resin 7 is performed at 150 ° C. for 2 hours (filling member curing step). In this manner, the filled sealing resin 7 is cured by performing the curing process. Moreover, what is necessary is just to select suitably the hardening process conditions of the sealing resin 7 according to the material of the sealing resin 7, etc. FIG. After the sealing resin 7 is cured, it is taken out from the mold.

  Through the main manufacturing steps described above, the semiconductor device 200 shown in FIG. 22 can be manufactured.

  FIG. 23 is a schematic cross-sectional structure diagram showing another manufacturing process of the semiconductor device in the second embodiment of the present invention. In the manufacturing method of the semiconductor device 200 described above, the semiconductor device 200 can be similarly manufactured even if FIG. 21 is replaced with FIG. In FIG. 23, instead of pulling out only the pressing pin 16 of the lead frame 2 from the upper mold 14 in FIG. 21, only the pressing pin 15 is pulled out from the upper mold 14 with the pressing pin 15 and the lead frame pressing pin 16 integrated. It can respond.

  In the semiconductor device 200 configured as described above, the through hole 8 is provided in the heat conducting member 1, the processed hole 11 is provided in the circuit board 6, and the through hole 8 and the processed hole 11 are connected to the surface of the heat conducting member 1. Since the circuit board 6 is supported by the support pins 13 and the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the semiconductor device can be miniaturized.

  Further, since the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the degree of freedom of arrangement of the lead portion of the lead frame 2 is widened, and the restriction of the arrangement of the terminal protruding outside from the sealing resin 7 can be eliminated. it can.

  Furthermore, since the lead frame pressing pin 16 is provided and the lead frame 2 is pressed, the wraparound of the sealing resin 7 to the lower surface of the lead frame 2 can be reduced, and the floating of the lead frame 2 can be suppressed.

  Although the lead frame pressing pin 16 is provided in the second embodiment, the lead frame pressing pin 16 may not be used in the case of using the sealing resin 7 injection condition considering the floating of the lead frame 2. . In that case, it is not necessary to form the lead frame pressing pin hole 17.

Embodiment 3.
In the third embodiment, the gap 10 that is a prohibited area with the lead frame 2 used in the first embodiment is set to a step 91 similar to the step 9 provided on the outer periphery of the lead frame 2. Different. As described above, the step portions 91 are provided at the corresponding positions above the through holes 81 of the lead frame 2 to secure the distance between the lead frame 2 and the metal foil 1b. Even when the distance between the heat conducting member 1 and the through hole 8 of the heat conducting member 1 is short, the distance between the end of the lead frame 2 and the heat conducting member 1 can be secured, so that the insulation of the semiconductor device 300 can be secured. it can. Since other points are the same as those in the first embodiment, detailed description thereof is omitted.

  FIG. 24 is a schematic cross-sectional structure diagram showing the semiconductor device in the third embodiment of the present invention. In FIG. 24, a semiconductor device 300 includes a heat conducting member 1, a lead frame 2, a solder 3 as a bonding material, a semiconductor element 4, a bonding wire 5, a circuit board 6, and a sealing resin 7 as a sealing member. . Further, the heat conducting member 1 includes a through hole 8 that is a first hole, and the lead frame 2 includes a through hole 81 that is a second hole. Furthermore, the circuit board 6 includes a processing hole 11 that is a third hole.

  FIG. 25 is a schematic cross-sectional structure diagram in the vicinity of the end portion of the semiconductor device according to the third embodiment of the present invention. In the figure, the lead frame 2 includes a step 91 on the lead frame 2 at a position corresponding to the gap 10 of the through hole 81. The stepped portion 91 is a portion into which the sealing resin 7 enters. The step portion 91 of the lead frame 2 has a structure for suppressing dielectric breakdown along the interface between the metal foil 1 a of the heat conducting member 1 and the sealing resin 7. The step portion 91 has a step distance necessary for ensuring insulation between the heat conducting member 1 and the lead frame 2. For this reason, even when the gap 10 in the prohibited area of the lead frame 2 cannot be obtained with a sufficient distance for ensuring insulation, the gap of the step portion 91 is set so that the distance is sufficient for ensuring insulation. By setting, insulation of the semiconductor device 300 can be ensured. The distance from the upper surface of the insulating sheet 1 b that is the upper surface of the heat conducting member 1 to the lower surface of the stepped portion 91 corresponds to the gap 10. Further, from the viewpoint of ensuring the withstand voltage, the gap 10 is secured at the outer peripheral portion of the through hole 8 even when the stepped portion 91 is provided.

  A step 91 of the lead frame 2 is a step between the lead frame 2 and the heat conducting member 2. The step portion 91 of the lead frame 2 is formed by, for example, half-cutting. The height of the step portion 91 of the lead frame 2 (the distance from the upper surface of the insulating sheet 1b of the heat conducting member 1 to the lower surface of the step portion 91) is, for example, 0.1 mm or more and 0 which is half the thickness of the lead frame 2 3 mm or less. By setting it as 0.1 mm or more, it can suppress that a void generate | occur | produces in the sealing resin 7 with which the space between the heat conductive member 1 and the lead frame 2 is filled.

  Further, the strength can be secured by setting the thickness to 0.3 mm or less, which is half the thickness of the lead frame 2. Furthermore, by providing the stepped portion 91 and filling the stepped portion 91 with the sealing resin 7, the dielectric strength between the metal foil 1a of the heat conducting member 1 and the lead frame 2 can be improved.

  In the semiconductor device 300 configured as described above, the through hole 8 is provided in the heat conducting member 1, the through hole 81 is provided in the lead frame 2, the processed hole 11 is provided in the circuit board 6, and the through hole 8 is penetrated. The hole 81 and the processed hole 11 are arranged on the same straight line in the direction perpendicular to the surface of the heat conducting member 1, the circuit board 6 is supported by the support pins 13, and the support part provided on the outer peripheral part of the circuit board 6 is eliminated. As a result, the semiconductor device can be miniaturized.

  Further, since the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the degree of freedom of arrangement of the lead portion of the lead frame 2 is widened, and the restriction of the arrangement of the terminal protruding outside from the sealing resin 7 can be eliminated. it can.

  Further, since the step portion 91 is provided at a corresponding position above the through hole 81 of the lead frame 2, the semiconductor is ensured with insulation in the gap 10 in the prohibited region at the end of the through hole 81 of the lead frame 2. The device can be miniaturized.

Embodiment 4 FIG.
In the fourth embodiment, the semiconductor device according to the first to third embodiments described above is applied to a power conversion device. Although the present invention is not limited to a specific power converter, hereinafter, a case where the present invention is applied to a three-phase inverter will be described as a fourth embodiment.

  FIG. 26 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to Embodiment 6 of the present invention is applied.

  The power conversion system illustrated in FIG. 26 includes a power supply 1000, a power conversion device 2000, and a load 3000. The power supply 1000 is a DC power supply and supplies DC power to the power converter 2000. The power supply 1000 can be composed of various types, for example, can be composed of a direct current system, a solar battery, a storage battery, or can be composed of a rectifier circuit, an AC / DC converter, etc. connected to the alternating current system. Good. The power supply 1000 may be configured by a DC / DC converter that converts DC power output from the DC system into predetermined power.

  The power conversion device 2000 is a three-phase inverter connected between a power supply 1000 and a load 3000, converts DC power supplied from the power supply 1000 into AC power, and supplies AC power to the load 3000. As shown in FIG. 26, the power conversion device 2000 converts a DC power input from the power supply 1000 into an AC power and outputs a main conversion circuit 2001, and a control signal for controlling the main conversion circuit 2001 as a main conversion circuit 2001. And a control circuit 2003 for outputting to the computer.

  Load 3000 is a three-phase electric motor driven by AC power supplied from power conversion device 2000. Note that the load 3000 is not limited to a specific application, and is an electric motor mounted on various electric devices. For example, the load 3000 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, an air conditioner, or the like.

  Hereinafter, details of the power conversion apparatus 2000 will be described. The main conversion circuit 2001 includes a switching element and a free-wheeling diode (not shown) built in the semiconductor device 2002, and converts the DC power supplied from the power source 1000 into AC power by switching the switching element. And supplied to the load 3000. Although there are various specific circuit configurations of the main conversion circuit 2001, the main conversion circuit 2001 according to the present embodiment is a two-level three-phase full bridge circuit, and includes six switching elements and respective switching elements. It can be composed of six freewheeling diodes connected in antiparallel. The main conversion circuit 2001 is configured by a semiconductor device 2002 corresponding to any one of the above-described first to fifth embodiments, in which each switching element, each return diode, and the like are incorporated. The six switching elements are connected in series for each of the two switching elements to constitute upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 2001 are connected to the load 3000.

  The main conversion circuit 2001 includes a drive circuit (not shown) that drives each switching element. The drive circuit may be incorporated in the semiconductor device 2002 or may be configured to include a drive circuit separately from the semiconductor device 2002. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 2001 and supplies it to the control electrode of the switching element of the main conversion circuit 2001. Specifically, in accordance with a control signal from a control circuit 2003 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element. When the switching element is kept on, the drive signal is a voltage signal (on signal) that is equal to or higher than the threshold voltage of the switching element. When the switching element is kept off, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element. Signal (off signal).

  The control circuit 2003 controls the switching element of the main conversion circuit 2001 so that desired power is supplied to the load 3000. Specifically, based on the power to be supplied to the load 3000, the time (ON time) during which each switching element of the main converter circuit 2001 is to be turned on is calculated. For example, the main conversion circuit 2001 can be controlled by PWM control that modulates the ON time of the switching element according to the voltage to be output. In addition, a control command (a control command ( Control signal). In accordance with this control signal, the drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element.

  In the power conversion device according to the fourth embodiment configured as described above, since the semiconductor device according to the first to third embodiments is applied as the semiconductor device 2002 of the main conversion circuit 2001, the reliability is improved. be able to.

  In the present embodiment, the example in which the present invention is applied to the two-level three-phase inverter has been described. However, the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, a two-level power conversion device is used, but a three-level, multi-level power conversion device may be used. When power is supplied to a single-phase load, the present invention is applied to a single-phase inverter. You may apply. In addition, when power is supplied to a DC load or the like, the present invention can be applied to a DC / DC converter, an AC / DC converter, or the like.

  The power conversion device to which the present invention is applied is not limited to the case where the load described above is an electric motor. For example, an electric discharge machine, a laser processing machine, an induction heating cooker, and a power supply device for a non-contact power supply system It can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

  It should be understood that the above-described embodiment is illustrative and non-restrictive in every respect. The scope of the present invention is shown not by the above-described embodiment but by the scope of claims, and includes all modifications within the meaning and scope equivalent to the scope of claims. Further, the invention may be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments.

DESCRIPTION OF SYMBOLS 1 Thermal conductive member, 1a Metal foil, 1b Insulation sheet, 2 Lead frame, 3 Solder, 4 Semiconductor element, 5 Bonding wire, 6 Circuit board, 7 Sealing resin, 8,81 Through-hole, 9,91 Step part, 10 Clearance, 11 Processing hole, 12 Lower mold, 13 Support pin, 14 Upper mold, 15 Holding pin, 16 Lead frame holding pin, 17 Lead frame holding pin hole, 18 Pin mark, 19 Connection member, 100, 101 , 102, 200, 300, 2002 Semiconductor device, 1000 power supply, 2000 power conversion device, 2001 main conversion circuit, 2003 control circuit, 3000 load.

Claims (15)

A heat conducting member having a first hole;
A metal member provided on the heat conducting member, on which a semiconductor element is mounted, and having a second hole at a corresponding position above the first hole;
A circuit board disposed above the metal member and having a third hole at a corresponding position above the second hole;
A sealing member that encloses the circuit board, fills the first hole, the second hole, and the third hole, and integrally seals the heat conducting member, the metal member, and the circuit board; A semiconductor device comprising: 2. The semiconductor device according to claim 1, wherein at least three or more of the first hole, the second hole, and the third hole are formed. 3. The semiconductor device according to claim 1, wherein the third hole has a truncated cone shape that decreases in diameter as the distance from the surface side that penetrates the circuit board and faces the metal member. 3. The semiconductor device according to claim 1, wherein the third hole has a two-stage shape having a large diameter on a surface side that penetrates the circuit board and faces the metal member. The semiconductor device according to claim 1, wherein the third hole has a depth shallower than a thickness of the circuit board. 6. The semiconductor device according to claim 1, wherein a diameter of the first hole, a diameter of the second hole, and a diameter of the third hole are 0.5 mm or more. The semiconductor device according to any one of claims 1 to 6, wherein a distance from an outer peripheral end of the first hole to an outer peripheral end of the second hole is 0.1 mm or more. The semiconductor device according to claim 1, wherein the metal member has a stepped portion, and the stepped portion has a distance to the heat conducting member of 0.1 mm or more. The semiconductor device according to claim 8, wherein the metal member has the step portion formed around the second hole. The semiconductor device according to claim 7, wherein the circuit board includes a fourth hole inside the third hole and above the metal member on which the semiconductor element is not mounted. The semiconductor device according to claim 10, wherein the fourth hole is filled with the sealing member. The semiconductor device according to claim 10, wherein the sealing member has a recess formed at a corresponding position above the fourth hole. A semiconductor element is mounted on the heat conducting member having the first hole, a metal member having a second hole is disposed at a corresponding position above the first hole, and the second hole is disposed above the metal member. A base material preparation step of arranging a circuit board having a third hole at a corresponding position above
The heat conductive member, the metal member, and the circuit board are disposed in a lower mold, and the circuit board is supported by a support pin that moves up and down using the first hole, the second hole, and the third hole. A base material placement step in the lower mold for supporting
An upper mold installation step of sandwiching the metal terminal portion of the metal member between the lower mold and the upper mold;
A sealing member filling step including the circuit board, and sealing the heat conducting member, the metal member, and the circuit board integrally with a sealing member;
A support pin extracting step of extracting the support pin from the lower mold;
In-mold repressurization step of filling the sealing member into the first hole, the second hole, and the third hole;
A sealing member curing step for curing the sealing member;
A method for manufacturing a semiconductor device comprising: The method of manufacturing a semiconductor device according to claim 13, wherein the upper mold installation step uses the circuit board provided with a fourth hole, and uses the fourth hole to hold the metal member with a holding pin. A main conversion circuit having the semiconductor device according to any one of claims 1 to 12 for converting and outputting input power;
A control circuit for outputting a control signal for controlling the main conversion circuit to the main conversion circuit;
The power converter provided with.

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