JP2016136604A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which is suitable for downsizing and achieves good heat radiation performance.SOLUTION: A semiconductor device according to the invention includes: semiconductor elements 12, 14; a mold resin 24 covering the semiconductor elements 12, 14; and a metal plate 32 provided on the mold resin 24 and positioned above the semiconductor elements 12, 14. A first through hole 34 penetrating through the metal plate 32 and the mold resin 24 is provided in a thickness direction of the mold resin 24.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device used, for example, for switching a large current.

  Patent Document 1 discloses a semiconductor device including a chip and a resin that covers the chip.

Japanese Patent Laid-Open No. 05-082672

  In a semiconductor device on which a plurality of semiconductor elements are mounted, there is a problem that heat generated from each of the plurality of semiconductor elements interferes and the temperature of the semiconductor device increases. As a result, there is a problem that the semiconductor element deteriorates.

  If the distance between the semiconductor elements is increased in order to suppress the temperature rise of the semiconductor elements, there is a problem that the semiconductor device is increased in size.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device having good heat dissipation suitable for downsizing.

  A semiconductor device according to the present invention includes a plurality of semiconductor elements, a mold resin covering the plurality of semiconductor elements, and a metal plate provided on the mold resin and positioned on the plurality of semiconductor elements. And a first through hole penetrating the metal plate and the mold resin is provided in the thickness direction of the mold resin.

  Another semiconductor device according to the invention of the present application includes a plurality of semiconductor elements and a mold resin that covers the plurality of semiconductor elements, and the mold resin immediately above any one of the plurality of semiconductor elements is disposed on the mold resin. A first lateral through hole penetrating in the lateral direction is formed.

  Another semiconductor device according to the invention of the present application includes a first semiconductor element, a second semiconductor element, and a mold resin that covers the first semiconductor element and the second semiconductor element, and the first semiconductor element and the A recess is formed in the mold resin between the second semiconductor elements.

  Another semiconductor device according to the present invention includes a first semiconductor element, a second semiconductor element, a mold resin that covers the first semiconductor element and the second semiconductor element, and a back surface side of the first semiconductor element. And a second insulating sheet provided on the back side of the second semiconductor element and not in contact with the first insulating sheet.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which has favorable heat dissipation suitable for size reduction can be provided by providing a new thermal radiation path | route or suppressing the passage of the heat | fever between semiconductor elements.

1 is a cross-sectional view of a semiconductor device according to a first embodiment. It is a top view which shows the positional relationship of a semiconductor element and a 1st through-hole. It is a perspective view of a semiconductor device. It is sectional drawing of the semiconductor device fixed to the heat sink. It is a figure which shows the thermal radiation path | route of the semiconductor device of a comparative example. FIG. 3 is a diagram illustrating a heat dissipation path of the semiconductor device according to the first embodiment. FIG. 6 is a cross-sectional view of a semiconductor device according to a second embodiment. FIG. 6 is a cross-sectional view of a semiconductor device according to a third embodiment. FIG. 6 is a cross-sectional view of a semiconductor device according to a fourth embodiment. FIG. 6 is a cross-sectional view of a semiconductor device according to a fifth embodiment. FIG. 10 is a sectional view of a semiconductor device according to a sixth embodiment. FIG. 10 is a sectional view of a semiconductor device according to a seventh embodiment. FIG. 10 is a perspective view of a semiconductor device according to an eighth embodiment. It is a perspective view of the semiconductor device which concerns on a modification.

  A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

Embodiment 1 FIG.
FIG. 1 is a sectional view of a semiconductor device 10 according to the first embodiment of the present invention. The semiconductor device 10 includes semiconductor elements 12 and 14. The semiconductor element 12 is a switching element that switches a large current, such as an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 14 is, for example, a free wheeling diode.

  The collector on the back surface of the semiconductor element 12 and the cathode on the back surface of the semiconductor element 14 are fixed to the frame 16 with solder. In order to reduce the thermal resistance of the semiconductor elements 12 and 14, the frame 16 is made of, for example, copper or a copper alloy. The frame 16 may be plated.

  An insulating sheet 18 is in contact with the frame 16 that is in contact with the back surfaces of the semiconductor elements 12 and 14. A metal foil 20 is in contact with the insulating sheet 18. The material of the metal foil 20 is, for example, copper. The emitter on the upper surface of the semiconductor element 12 and the anode on the upper surface of the semiconductor element 14 are connected by a wire 22a. The anode of the semiconductor element 14 is connected to a frame different from the frame 16 by a wire 22b. The wires 22a and 22b are, for example, thick wire aluminum wires.

  The semiconductor elements 12 and 14 are covered with a mold resin 24. A part of the frame 16 and the back surface of the metal foil 20 are exposed outside the mold resin 24. Lead terminals 26 extend out of the mold resin 24. A control IC 28 is fixed to the lead terminal 26 in the mold resin 24 with resin paste or the like. The control IC 28 is connected to the gate of the semiconductor element 12 by a wire 22c. The wire 22c is, for example, a fine gold wire. The control IC 28 transmits a control signal for switching on / off of the semiconductor element 12 to the gate of the semiconductor element 12. Thus, the semiconductor device 10 constitutes a transfer mold type power module.

  A metal plate 32 is provided on the mold resin 24. Although the material of the metal plate 32 will not be specifically limited if it is a material with good heat dissipation, For example, it is copper. The metal plate 32 is located on the plurality of semiconductor elements. A first through hole 34 that penetrates the metal plate 32 and the mold resin 24 is provided in the thickness direction of the mold resin 24. In the first embodiment of the present invention, the first through hole 34 penetrates the insulating sheet 18 and the metal foil 20 in addition to the metal plate 32 and the mold resin 24.

  FIG. 2 is a plan view showing the positional relationship between the semiconductor element and the first through hole. In the mold resin, there are semiconductor elements 40 and 42 in addition to the semiconductor elements 12 and 14. The semiconductor elements 40 and 42 are an IGBT and a free-wheeling diode, respectively. The collector of the semiconductor element 40 and the cathode of the semiconductor element 42 are fixed to the frame 17. The emitter of the semiconductor element 40 and the anode of the semiconductor element 42 are wire-connected. Therefore, the semiconductor device 10 constitutes a leg having two arms.

  The first through hole 34 is provided between the plurality of semiconductor elements in plan view. Specifically, the first through hole 34 is provided between the semiconductor element 12 and the semiconductor element 40. By the way, the metal plate 32 is provided on the mold resin 24 where the temperature tends to be particularly high. In particular, the place where the temperature tends to be high is between the semiconductor element 12 and the semiconductor element 40 in the first embodiment of the present invention. Therefore, the metal plate 32 is provided at least directly between the semiconductor element 12 and the semiconductor element 40. However, since the metal plate 32 has a function of improving heat dissipation, it is preferably provided not only between the semiconductor elements but also over the entire region where the semiconductor elements are formed. Specifically, the metal plate 32 is preferably provided over the entire region where the semiconductor elements 12, 14, 40 and 42 are formed.

  FIG. 3 is a perspective view of the semiconductor device. The first through hole 34 is provided substantially at the center of the mold resin 24. FIG. 4 is a cross-sectional view of the semiconductor device fixed to the heat sink. The heat sink 50 includes a flat portion 50a and a fin portion 50b connected to the flat portion 50a. The heat sink 50 is provided with a screw hole 50c. The semiconductor device is fixed to the heat sink 50 by screws 52 inserted into the screw holes 50c. The head of the screw 52 is in contact with the metal plate 32. A shaft portion (portion in which a thread is engraved) of the screw 52 passes through the first through hole 34 and is screwed into the screw hole 50c.

  In a state in which the semiconductor device 10 is screwed to the heat sink 50, the metal foil 20 exposed on the back surface of the semiconductor device contacts the heat sink 50 through grease provided between the metal foil 20 and the heat sink 50.

  Here, a comparative example will be described in order to facilitate understanding of the characteristics of the semiconductor device according to the first embodiment of the present invention. FIG. 5 is a diagram illustrating a heat dissipation path of the semiconductor device of the comparative example. The semiconductor device of the comparative example is substantially the same as the semiconductor device of FIG. 1, but differs from the semiconductor device of FIG. 1 in that the first through hole 34 is not provided. As a heat dissipation path of the semiconductor device of the comparative example, the first path from the semiconductor element to the heat sink through the frame, the insulating sheet, the metal foil, and the grease, and the first path from the semiconductor element to the metal plate through the mold resin. There are two routes.

  FIG. 6 is a diagram showing a heat dissipation path of the semiconductor device according to the first embodiment of the present invention. As a heat dissipation path of the semiconductor device according to the first embodiment of the present invention, in addition to the first path and the second path described above, the heat sink 50 is connected from the semiconductor element via the mold resin 24, the metal plate 32, and the screw 52. There is a third route leading to Therefore, the heat dissipation of the semiconductor device can be enhanced by the third path not provided in the semiconductor device of the comparative example. Since the third path can be easily formed by opening the first through hole 34 in the semiconductor device, there is no need to increase the size of the semiconductor device. Therefore, the semiconductor device of Embodiment 1 is suitable for miniaturization.

  The first through hole 34 is preferably formed at a location where the temperature is maximum due to thermal interference of a plurality of semiconductor elements when there is no first through hole. By forming the first through hole in a place where the temperature is maximum, heat dissipation at this position can be promoted. In the first embodiment of the present invention, the position between the semiconductor element 12 and the semiconductor element 40 is a place where the temperature is maximized due to thermal interference. Therefore, the first through hole is provided between the semiconductor element 12 and the semiconductor element 40. Formed.

  The position of the first through hole 34 can be changed. The first through hole 34 is not necessarily formed at a place where the temperature is maximum. For example, when the entire region provided with a plurality of semiconductor elements is at a high temperature, if the first through hole 34 is provided somewhere in the region where the plurality of semiconductor elements are provided and spread to some extent, sufficient heat dissipation is achieved. Can be increased. When providing the first through hole 34, care must be taken not to cut the wire or damage the semiconductor element.

  The metal foil 20 may be omitted. In that case, grease is provided between the insulating sheet 18 and the heat sink 50. The insulating sheet 18 may be omitted and the back surface of the semiconductor element may be covered with the mold resin 24. Such a structure is called a full mold structure.

  A plurality of first through holes 34 may be provided. If a plurality of the first through holes 34 are provided, the number of the third paths can be increased, so that the heat dissipation can be further improved. It is also effective to use the first through hole for air cooling of the semiconductor element without passing the screw through the first through hole. These modifications can be applied to semiconductor devices according to the following embodiments as appropriate. Note that since the semiconductor device according to the following embodiment has much in common with the first embodiment, the description will focus on differences from the first embodiment.

Embodiment 2. FIG.
FIG. 7 is a cross-sectional view of the semiconductor device according to the second embodiment. A plurality of second through holes 60 penetrating the mold resin 24 in the thickness direction are formed in the mold resin 24. The second through hole 60 is formed at a position where insulation of the semiconductor element, the wire, and the frame can be ensured. The second through hole 60 does not necessarily pass through the metal plate 32 and is formed at an arbitrary position of the semiconductor device. When the semiconductor device is air-cooled, air can pass through the second through hole 60, and heat dissipation by convection is possible. In the case of water cooling, heat dissipation can be improved by passing water (refrigerant) through the second through hole 60.

Embodiment 3.
FIG. 8 is a cross-sectional view of the semiconductor device according to the third embodiment. The opening width of the second through hole 62 differs between the upper surface side and the lower surface side of the mold resin 24. In the semiconductor device according to the third embodiment of the present invention, assuming that air flows from the upper side to the lower side of the semiconductor device, the opening width of the second through hole 62 is set to the upper surface side of the mold resin 24 and the lower surface side of the mold resin 24. Made bigger. Thereby, air becomes easy to flow into the 2nd through hole 62, and the heat of a semiconductor device can be radiated by convection.

Embodiment 4 FIG.
FIG. 9 is a cross-sectional view of the semiconductor device according to the fourth embodiment. A through hole 50 d that communicates with the second through hole 60 is formed in the heat sink 50. Thereby, since air flows from one of the through hole 50d and the second through hole 60 to the other, the heat of the semiconductor device can be radiated by convection.

Embodiment 5 FIG.
FIG. 10 is a cross-sectional view of the semiconductor device according to the fifth embodiment. A first lateral through hole 70 is formed through the mold resin 24 immediately above the semiconductor element 12 in the lateral direction. In addition to the first lateral through hole 70, a lateral through hole penetrating the mold resin 24 in the lateral direction is formed.

  Since the first lateral through hole 70 is a hole in the immediate vicinity of the semiconductor element 12, the air can flow into the first lateral through hole 70, thereby improving the heat dissipation of the semiconductor device by convection. When air flows into the other lateral through holes, the heat dissipation of the semiconductor device is enhanced. Moreover, in the case of water cooling, heat dissipation can be improved by passing water through these holes. In addition, the 1st horizontal direction through-hole 70 should just penetrate the mold resin 24 immediately above any one semiconductor element of a some semiconductor element in a horizontal direction. By forming the lateral through hole in the immediate vicinity of the semiconductor element, the heat dissipation can be sufficiently enhanced.

Embodiment 6 FIG.
FIG. 11 is a cross-sectional view of the semiconductor device according to the sixth embodiment. In the semiconductor device according to the sixth embodiment of the present invention, there is no insulating sheet on the back side of the semiconductor element, and there is a mold resin in all directions of the semiconductor element. That is, the mold resin 24 covers the lower surfaces of the plurality of semiconductor elements. A second lateral through hole 72 is formed through the mold resin 24 immediately below the semiconductor element 12 in the lateral direction. Since the second lateral through hole is in the immediate vicinity of the semiconductor element 12, the air can flow into the second lateral through hole 72, so that the heat dissipation of the semiconductor device can be improved by convection. In the case of water cooling, heat dissipation can be improved by passing water through the hole.

  The second lateral through hole only needs to penetrate the mold resin 24 immediately below any one of the plurality of semiconductor elements in the lateral direction. Therefore, the second lateral through hole may be formed at a position other than directly below the semiconductor element 12. The first lateral through hole 70 and the second lateral through hole 72 are provided in a portion where there are no semiconductor elements, wires, and frames.

Embodiment 7 FIG.
FIG. 12 is a cross-sectional view of the semiconductor device according to the seventh embodiment. A plurality of insulating sheets 18 are provided on the metal foil 20. A semiconductor element 80 is provided on each of the plurality of insulating sheets 18. The semiconductor element 80 is covered with the mold resin 24. FIG. 12 shows six semiconductor elements 80. One of them is a first semiconductor element 80a, and the semiconductor element adjacent to the first semiconductor element 80a is a second semiconductor element 80b. Concave portions 24a are formed in the mold resin between the semiconductor elements. For example, a recess 24a is formed in the mold resin 24 between the first semiconductor element 80a and the second semiconductor element 80b.

  In FIG. 12, elements relating to electrical connection of the semiconductor element 80 are omitted, but the recess 24a is provided so as not to hinder such electrical connection. By providing the recess 24a, thermal interference between the semiconductor elements is reduced. In other words, the recess 24a blocks a path through which heat generated in one semiconductor element conducts heat to another semiconductor element, thereby preventing thermal interference between the semiconductor elements. The shape of the recess 24a is not limited to the notch shown in FIG. 12, and may be, for example, a U-shaped groove.

Embodiment 8 FIG.
FIG. 13 is a perspective view of a semiconductor device according to the eighth embodiment. The first semiconductor element 90 a and the second semiconductor element 90 b are covered with the mold resin 24. The first semiconductor element 90a is a switching element having a first collector, a first emitter, and a first gate, and the second semiconductor element 90b is a switching element having a second collector, a second emitter, and a second gate. A first emitter and a second collector are connected in the mold resin 24.

  A first insulating sheet 18a is provided on the back side of the first semiconductor element 90a. A second insulating sheet 18b that does not contact the first insulating sheet 18a is provided on the back surface side of the second semiconductor element 90b.

  The semiconductor device according to the eighth embodiment forms an inverter device for driving a motor having a first semiconductor element 90a that functions as a P-side semiconductor element and a second semiconductor element 90b that functions as an N-side semiconductor element. And the 1st semiconductor element 90a and the 2nd semiconductor element 90b are divided | segmented by dividing | segmenting the 1st insulating sheet 18a used for the insulation of the 1st semiconductor element 90a, and the 2nd insulating sheet 18b used for the insulation of the 2nd semiconductor element 90b. The thermal interference between can be suppressed.

  Various modifications can be made to the semiconductor device according to the eighth embodiment of the present invention. For example, the first semiconductor element may be a switching element having a collector, an emitter, and a gate, and the second semiconductor element may be a control IC connected to the gate. In this case, the control IC and the gate are connected by wire. In this way, an insulating sheet (first insulating sheet 18a) immediately below the first semiconductor element, which is a so-called power chip, and an insulating sheet (second insulating sheet 18b) immediately below the control IC are divided. Thereby, thermal interference between the power chip and the control IC can be suppressed.

  FIG. 14 is a perspective view of a semiconductor device according to another modification. A connecting portion 18c made of the same material as the first insulating sheet 18a and the second insulating sheet 18b is provided. The connecting portion 18c connects the first insulating sheet 18a and the second insulating sheet 18b while leaving a portion where the first insulating sheet 18a and the second insulating sheet 18b face each other but do not contact each other. In other words, the connecting portion 18c connects the end portions of the first insulating sheet 18a and the second insulating sheet 18b. Thereby, position shift of an insulating sheet can be prevented, enjoying the effect of thermal interference suppression.

  The features of the semiconductor devices according to the embodiments described so far may be combined as appropriate.

  DESCRIPTION OF SYMBOLS 10 Semiconductor device 12, 14, 40, 42 Semiconductor element, 16, 17 Frame, 18, 18a, 18b Insulating sheet, 18c Connection part, 20 Metal foil, 24 Mold resin, 32 Metal plate, 34 1st through-hole, 50 Heat sink, 50c screw hole, 50d through hole, 60,62 second through hole, 70 first lateral through hole, 72 second lateral through hole

Claims (15)

A plurality of semiconductor elements;
A mold resin covering the plurality of semiconductor elements;
A metal plate provided on the mold resin and positioned on the plurality of semiconductor elements,
A semiconductor device, wherein a first through hole penetrating the metal plate and the mold resin is provided in a thickness direction of the mold resin.   The semiconductor device according to claim 1, wherein the first through hole is provided between the plurality of semiconductor elements in a plan view. A heat sink having screw holes;
3. The semiconductor device according to claim 1, further comprising: a screw having a head portion in contact with the metal plate and a shaft portion screwed into the screw hole through the first through hole. A frame in contact with the back surface of the plurality of semiconductor elements;
An insulating sheet in contact with the frame;
The semiconductor device according to claim 3, further comprising grease provided between the insulating sheet and the heat sink. A frame in contact with the back surface of the plurality of semiconductor elements;
An insulating sheet in contact with the frame;
A metal foil in contact with the insulating sheet;
The semiconductor device according to claim 3, further comprising grease provided between the metal foil and the heat sink.   The semiconductor device according to claim 1, wherein a second through hole that penetrates the mold resin in a thickness direction is formed in the mold resin.   The semiconductor device according to claim 6, wherein an opening width of the second through hole is different between an upper surface side and a lower surface side of the mold resin. A second through hole penetrating the mold resin in the thickness direction is formed in the mold resin,
The semiconductor device according to claim 3, wherein a through hole communicating with the second through hole is formed in the heat sink. A plurality of semiconductor elements;
A mold resin covering the plurality of semiconductor elements,
A semiconductor device, wherein a first lateral through hole penetrating the mold resin directly above any one of the plurality of semiconductor elements in the lateral direction is formed. The mold resin covers the lower surfaces of the plurality of semiconductor elements,
10. The semiconductor device according to claim 9, wherein a second lateral through-hole penetrating the mold resin immediately below any one of the plurality of semiconductor elements in the lateral direction is formed. A first semiconductor element;
A second semiconductor element;
A mold resin covering the first semiconductor element and the second semiconductor element,
A semiconductor device, wherein a recess is formed in the mold resin between the first semiconductor element and the second semiconductor element. A first semiconductor element;
A second semiconductor element;
A mold resin covering the first semiconductor element and the second semiconductor element;
A first insulating sheet provided on the back side of the first semiconductor element;
A semiconductor device comprising: a second insulating sheet provided on a back surface side of the second semiconductor element and not in contact with the first insulating sheet. The first semiconductor element is a switching element having a first collector, a first emitter, and a first gate;
The second semiconductor element is a switching element having a second collector, a second emitter, and a second gate;
13. The semiconductor device according to claim 12, wherein the first emitter and the second collector are connected in the mold resin. The first semiconductor element is a switching element having a collector, an emitter, and a gate;
The semiconductor device according to claim 12, wherein the second semiconductor element is a control IC connected to the gate.   13. A connection portion for connecting the first insulating sheet and the second insulating sheet is provided, leaving a portion where the first insulating sheet and the second insulating sheet face each other but do not contact each other. 14. The semiconductor device according to any one of 14.

Images