JP2004235175A - Power semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure having a high reliability in the structure in which a linear fin is mounted on a metallic base for a power semiconductor. <P>SOLUTION: In the structure of a power semiconductor module with a power semiconductor element switching a current, an insulating substrate with a circuit pattern on which the element is attached, and the metallic base 101 on which the substrate is attached; the linear type fin 114 is formed in a region under the substrate on the opposed surface of the substrate attached surface of the base 101, and a length in the stripe direction of the fin is formed in the length or less in the vertical direction in the shape of the substrate. Accordingly, even when the fin 114 is formed to the base, the distortion of solder under the substrate is not made larger than a plate with no fin because the fin direction of the fin and the longitudinal direction of the substrate are arranged vertically. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a power semiconductor module. In particular, I nsulated G ate B ipolar T TECHNICAL FIELD The present invention relates to a mounting structure of a power semiconductor module having a power semiconductor element such as a transistor (IGBT).
[0002]
[Prior art]
A power semiconductor module such as an IGBT module is used for an inverter that controls a high-output motor such as a motor for a hybrid electric vehicle. The cooling of the IGBT module in the automotive inverter is generally performed by water cooling. This is because, despite high heat generation, a large cooling capacity is required, but the inverter is required to have a small volume for mounting on a vehicle. In other words, the air cooling is not allowed because the volume of the heat sink is too large.
[0003]
JP-A-2001-177203 describes that a porous metal layer formed on at least one surface of a ceramic substrate is covered with a metal layer in which a tensile stress remains.
[0004]
In order to improve the cooling performance, there has been proposed a structure in which fins are provided on a metal base of a power semiconductor module and cooling water is directly applied to the finned metal base (direct water cooling).
[0005]
[Patent Document 1]
JP 2001-177203 A
[0006]
[Problems to be solved by the invention]
The structure of the conventional power semiconductor module for water cooling has the following problems in terms of reliability.
[0007]
Power semiconductor modules are IGBTs, F ree W heeling D An insulating substrate on which a power semiconductor chip such as iode (FWD) is mounted is bonded to a metal base by means such as solder bonding.
[0008]
Since the power semiconductor chip repeatedly generates and cools by the operation, each member in the module repeatedly expands and contracts according to the linear expansion coefficient of the member. In general, the linear expansion coefficient of a metal such as Cu or Al constituting a metal base is significantly different from that of an alumina or aluminum nitride constituting an insulating substrate. Therefore, a large distortion occurs in an adhesive layer such as a solder for bonding the metal base and the insulating substrate.
[0009]
When fins are provided on the metal base, the thermal resistance can be greatly reduced, so that the temperature change width and ΔT of the power semiconductor module that repeats heat generation and cooling by operation can be reduced. This leads to a reduction in the solder distortion. However, on the other hand, when fins are provided on a metal base that has been a conventional flat plate, the rigidity of the metal base increases. When the rigidity increases, the effect of stress relaxation due to the deformation of the metal base decreases, so that the strain increases. That is, even if the thermal resistance is reduced and ΔT is reduced, there is a concern that the distortion is not reduced, but rather increased due to the increase in rigidity.
[0010]
As means for increasing the heat transfer area without significantly increasing the rigidity of the metal base, it is conceivable that the fin shape is a pin type. However, the pin fins have disadvantages such as a large pressure loss when the cooling water flows, and a high manufacturing cost as compared with the linear fins.
[0011]
SUMMARY OF THE INVENTION An object of the present invention is to provide a power semiconductor module in which a linear fin is provided on a metal base to reduce thermal resistance, so that the distortion of the adhesive layer between the insulating substrate and the metal base can be made equal to that of a flat plate having no fin. It is to provide a structure of trust.
[0012]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides a power semiconductor element for switching a current, an insulating substrate having a circuit pattern for bonding the power semiconductor element, and a metal base for a power semiconductor module having at least a metal base for bonding the insulating substrate. On the surface facing the bonding surface of the insulating substrate, there are linear fins in a region below the insulating substrate, and the shape of the insulating substrate is such that the length of the linear fins in the stripe direction is the length of the vertical fins in the vertical direction. It is shorter than the length. Further, the linear fin is divided in a region below the insulating substrate.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
A structure (direct water cooling) in which fins are provided on the metal base of the power semiconductor module and cooling water is directly applied to the finned metal base to improve the cooling performance will be described below. FIG. 2 shows a schematic diagram of this structure. The fins 202 are formed on the metal base 201 of the IGBT module 200, and are taken out of the case 209 through the opening 211 of the Al die-cast inverter case 209, and are directly applied with cooling water. That is, the cooling water channel 203 is formed by the water channel cover 207 made of Al die casting and the metal base 201. In this structure, the heat conductive grease having a higher thermal resistance than the metal, which has conventionally been present between the metal base and the heat sink, can be eliminated, and the fin 202 is formed of a metal having a high thermal conductivity such as copper. The efficiency is high, and the thermal resistance can be significantly reduced as compared with the case of a flat plate without fins.
[0014]
The present invention will be described below with reference to FIGS. 1, 3, 4, and 5.
[0015]
Even if the fin is formed on the metal base, in order not to increase the distortion of the insulating substrate adhesive layer,
1) Even if the fin increases the rigidity of the metal base, the substrate structure and the substrate arrangement are not affected as much as possible.
2) Even when fins are formed, the fins are formed so that the rigidity is not significantly increased as compared with a flat plate.
3) Even if rigidity is increased, a structure of an adhesive layer in which distortion does not increase may be considered.
[0016]
Each of these will be described below.
[0017]
FIG. 1 is a structural explanatory view of the above 1). FIG. 1A is a schematic plan view, and FIGS. 1B and 1C are schematic sectional views of AA and BB in FIG. In the schematic cross-sectional view, a circuit pattern on the front surface of the insulating substrate 100, a back metal pattern for bonding, a circuit pattern between the semiconductor chip and the insulating substrate 100, and an adhesive layer between the insulating substrate and the metal base are omitted. In the longitudinal direction of the metal base 101, a linear fin 114 is formed. Therefore, there is an effect that a beam is formed in the longitudinal direction of the metal base. That is, the rigidity significantly increases in the longitudinal direction of the metal base 101 as compared with the case of the flat plate base without the fins 114. As is clear from FIG. 1C, the short side direction, that is, the vertical direction of the fin, can be deformed in the same manner as a flat plate in a portion where no fin exists, so that the rigidity does not significantly increase.
[0018]
On the other hand, the stress of the adhesive layer of the rectangular insulating substrate 100 is concentrated on the substrate edge in the substrate longitudinal direction, that is, on the short side. Therefore, it is the rigidity of the metal base in the long side direction of the insulating substrate 100 that affects the stress of the adhesive layer, that is, the magnitude of the distortion.
[0019]
Therefore, as shown in FIG. 1, if the long side of the insulating substrate 100 is arranged substantially perpendicular to the longitudinal direction of the metal base, the rigidity in the fin vertical direction does not increase remarkably as described above. The distortion does not increase.
[0020]
Next, FIG. 3 is an explanatory diagram of the above 2). As in FIG. 1, FIG. 3A is a schematic plan view, and FIGS. 3B and 3C are schematic cross-sectional views of AA and BB in FIG. Unlike the case described above, the longitudinal direction of the rectangular insulating substrate 100 is the same as the fin direction. That is, the increase in the rigidity of the metal base 300 due to the fins 301 increases the distortion of the adhesive layer of the insulating substrate 100 as it is. Therefore, a slit 302 is formed in the center of the fin 301 to reduce an increase in rigidity due to the fin 301. This is because the base 300 can be deformed at the slit 302 portion. In order to make this effect remarkable, the slit 302 must be present at a substantially central portion of the insulating substrate 100.
[0021]
Finally, FIGS. 4 and 5 are explanatory diagrams of the above 3). As in FIG. 1, FIG. 4A is a schematic plan view, FIGS. 4B and 4C are schematic cross-sectional views of AA and BB of FIG. 4A, and FIG. It is an enlarged view. This is a case where the insulating substrate 100 and the metal base 401 are bonded with the solder 500. As in the case of FIG. 3 described above, since the longitudinal direction of the rectangular insulating substrate 100 and the direction of the fin 400 are the same, a large distortion occurs in the solder layer on the short side of the insulating substrate 100 as it is in the case of a flat plate. Will occur. Therefore, the thickness of the solder layer 500 for bonding the substrate is made thinner at the center of the substrate 100 and becomes thicker toward both ends, that is, along the fin 400 direction. By adopting this structure, the thickness of the solder layer can be increased in the portion where the stress is large, so that the distortion can be reduced, and the portion that does not need to be thick, that is, the central portion of the substrate is kept thin, so that the thermal resistance increases as much as possible. Can be reduced.
[0022]
Embodiments of the present invention will be described below in detail with reference to the drawings.
[0023]
(Example 1)
The first embodiment will be described in detail with reference to FIGS. It is an embodiment of a three-phase IGBT module applied to a 50 kW class water-cooled three-phase inverter.
[0024]
A main terminal, a control terminal, a case, and the like of the module are omitted, and a copper base 101, an IGBT pellet 103, an FWD pellet 104, and the like are solder-adhered to a copper-bonded aluminum nitride substrate 100, a main terminal electrode pad 112, and a control terminal electrode pad 110. And so on. 1A is a schematic plan view, and FIGS. 1B and 1C are schematic sectional views taken along the lines AA and BB in FIG. 1A. In the schematic cross-sectional view, a circuit pattern on the front surface of the insulating substrate 100, a back metal pattern for bonding, a circuit pattern between the semiconductor chip and the insulating substrate 100, and an adhesive layer between the insulating substrate and the metal base are omitted.
[0025]
The size of the aluminum nitride substrate 100 is 2.6 cm × 5 cm 2, and two chips, each of an IGBT pellet 103 having a chip size of 11 mm □ and an FWD pellet 104 having a chip size of 6 mm × 9 mm, are bonded by high-temperature solder having a melting point of 300 ° C. or more. . The solder film thickness is about 0.1 mm. The voltage / current rating of each pellet is 600 V / 200 A, and the module is rated 600 V / 400 A by being connected in two parallel. Further, a gate resistor pellet 105 for preventing resonance and a thermistor 109 for detecting temperature when the IGBT is driven in parallel are soldered to the aluminum nitride substrate 100. The connection between the IGBT pellets 103 and FWD pellets 104 and the circuit patterns 122 and 123, which are copper patterns on the aluminum nitride substrate 100, is made by aluminum wires 106, 108 and 107. The wire diameter of this wire is 300 μmφ. The aluminum wires 107 and 108 do not represent the total number but only representative wires. The power semiconductor-mounted aluminum nitride substrate 100 and the copper base 101 are bonded together by a eutectic solder which is a low melting point solder having a melting point of about 180 ° C. The solder film thickness is about 0.15 mm. The connection between the aluminum nitride substrate 100 and the main terminal and control terminal electrode pads 112 and 110 is also made by aluminum wires 113 and 111. The wire diameter of this wire is 500 μmφ. Since the aluminum wires 106, 108 and 107 are bonded to the surface of the semiconductor pellet, it is necessary to consider low damage. Therefore, a relatively thin wire of 300 μm is used. However, since the aluminum wires 113 and 111 do not need to be considered for damage, thick wires are used in consideration of reduction in the number of bondings and reduction in electric resistance.
[0026]
Each arm of the three-phase module is composed of one aluminum nitride substrate 100, and a total of six substrates 100 are solder-bonded to a finned copper base 101 having a size of 10 cm × 23 cm and a flat plate portion having a thickness of 3 mm. . The width 115, interval 116, and height 118 of the fin 114 are 1 mm, 2 mm, and 5 mm, respectively. The length 120 is 16 cm. The number of the fins 114 is 14, and the width 121 of the entire fins is 4 cm. Fin 114 is of course arranged in a region below aluminum nitride substrate 100. The shape of the fin 114 is designed to achieve the maximum heat transfer in consideration of the flow rate when the cooling water flows and the fin efficiency.
[0027]
FIG. 8 shows an embodiment in which a water channel cover is attached to this module. FIG. 1A is a schematic diagram showing a case where a water channel cover is attached to the AA cross-sectional schematic diagram. An aluminum die-cast waterway cover 801 is in contact with the bottom surface of the fin 114 to form a waterway. The thickness of the waterway cover 801 was 3 mm in consideration of the strength. Although the BB cross section in FIG. 1A is not shown, the width of the water channel cover is substantially equal to the entire fin width of 4 cm. As described above, the reason why the water channel cover 801 is brought into contact with the fins 114 is to allow the cooling water to efficiently flow between the fins and to improve the heat transfer coefficient as much as possible. The shape per formed cooling water channel is 5 mm in height and 2 mm in width, and the number of flow channels is 13. The sealing of the cooling water is performed by attaching the water channel cover 801 with the O-ring 800. A groove 803 is provided in the inverter housing 802 made of Al die-casting for attaching an O-ring. The thickness of the housing was 3 mm as in the case of the waterway cover. The wire diameter of the O-ring is 1.9 mmφ and the groove depth is 1.4 mm. The module was mounted with M6 bolts and the tightening torque was 2.45 N · m. This torque is comparable to a normal module mounting torque.
[0028]
Ethylene glycol 50 vol. % Cooling water was passed through the water supply port 804 at a flow rate of 20 L / min, and the cooling performance was measured. According to the cooling channel structure, the average flow velocity of the cooling water is 2.6 m / s.
[0029]
First, the thermal resistance from the cooling water to the IGBT chip junction, Rth (j−w), which is an index of the cooling performance, was evaluated. As a result, when the cooling water temperature was 60 ° C., it was 0.12 K / W. For reference, a module without the fin 114 was also manufactured, and Rth (j−w) was measured. In this case, the shape of the cooling water channel is 2 mm deep and 4 cm wide, and the average flow velocity of the cooling water is 4.2 m / s. As a result, Rth (j−w) = 0.16 K / W. That is, by forming the fins, the cooling performance could be improved by about 30%. The pressure loss between the water supply and drainage pipes was 9 kPa, which was also improved as compared with 11 kPa without fins. The fact that Rth (j−w) can be reduced by 30% means that the temperature rise can be reduced by 30% when the heat generation of the semiconductor chip is the same. This means that if the increase in rigidity due to the provision of the fins on the copper base 101 does not significantly affect the adhesive solder layer of the substrate 100, the life is greatly increased. It is extremely difficult to directly measure the distortion of the solder bonding layer experimentally.
[0030]
Therefore, the distortion of the substrate 100 adhesive solder layer was evaluated by three-dimensional simulation. FIG. 7 shows the results. It is the result of having simulated the shear strain when the temperature was changed from 100 ° C. to 30 ° C. In the figure, (1) indicates the result of a flat plate having no fin as a reference (thickness: 3 mm), (3) indicates the result of the structure of the present invention, and (2) indicates the longitudinal direction of the substrate 100 and the direction of the fin 114 for reference. It is the same. As a result of the simulation, significant occurrence of distortion was concentrated in the vicinity of the two short sides, which are the ends of the substrate in the longitudinal direction of the substrate 100 in each case. In the case of (2) where the present invention is not employed, the shear strain range was 3.8%, which was increased by about 10% as compared with the 3.5% of (1). On the other hand, in the case of the present invention (3), it was 3.4%, which was almost the same as the reference (1). From the above, the effect of the present invention becomes clear, and a significant improvement in the solder life can be expected in addition to the effect of reducing the thermal resistance by the above-mentioned fin attachment.
[0031]
As a method of further reducing the solder distortion as compared with the case of the present embodiment, the thickness of the board adhesive solder layer may be thinner at the center of the board and thicker in the longitudinal direction of the board and at both ends. Since the stress at the substrate end in the long knitting direction is significantly larger than that at the substrate end in the short side direction, the film thickness is increased and the stress is reduced.
[0032]
(Example 2)
A second embodiment will be described with reference to FIG. 3A is a schematic plan view, and FIGS. 3B and 3C are schematic cross-sectional views of AA and BB in FIG. The structure of the copper-clad aluminum nitride substrate 100 including the components mounted on the substrate is the same as that of the first embodiment. The shape of the copper base 300 and the thickness of the flat plate portion are the same as those in the first embodiment. Further, the arrangement of the substrate 100 on the copper base 300, the type of solder for bonding the substrate 100, and the film thickness are completely the same. The difference from the first embodiment lies in the structure of the fin 301. Embodiment 1 is an embodiment in which linear fins 114 are arranged in the longitudinal direction of the module. The advantage in this case is that the pressure loss is small because the cooling flow path can be made straight and simple. However, when the IGBT module is used in a water-cooled inverter, the water supply / drainage pipes cannot always be arranged at the positions at both ends in the longitudinal direction of the IGBT module as in the first embodiment due to the requirement of the shape of the inverter. The present embodiment is an embodiment that addresses this case.
[0033]
In this embodiment, the water supply / drainage pipe is arranged in the vertical direction of the module longitudinal direction. Therefore, the fin 301 must be a straight fin parallel to the short side direction of the copper base 300. The fin height, width, and interval are the same as in the first embodiment, and the length 303 is 5 cm. In the case of this fin configuration, the longitudinal direction of the substrate 100 matches the direction of the fin 301. Therefore, the reduction of the solder distortion by the mechanism of the first embodiment cannot be realized, and the solder distortion under the substrate is significantly affected by the increase in the rigidity of the copper base due to the fins. Therefore, a slit 302 is provided in the fin at substantially the center of the substrate 100, and the fin is divided into two. The width of the slit 302 is 1 mm. It is desired that this width be as small as the processing allows. This is because the effect of the fin is not reduced as much as possible. By dividing the fin 301 into two by the slit 302, the influence of the fin on the substrate 100 can be significantly reduced. This is because the copper base 300 can be deformed at the slit 302 portion.
[0034]
The entire flow path will be described below. If a straight water channel is used as in the first embodiment, the water channel width becomes about 16 cm, and it is not possible to realize the high flow velocity necessary for improving the cooling performance. For example, compared to the first embodiment, it becomes about 1/4. In this case, high heat transfer cannot be expected at all, which is contrary to the purpose of forming the fin, which achieves high heat transfer. Therefore, the flow path is divided into three flow paths α, β, and γ, and the whole is connected as an S-shaped flow path. With this water channel configuration, the average flow velocity was 2 m / s when the flow rate was 20 L / min, and the flow velocity was comparable to that in Example 1. When Rth (j−w) and ΔP were measured at this flow rate, they were 0.13 K / W and 14 kPa. Rth (j−w) increases because the flow velocity is slightly reduced as compared with the first embodiment, and ΔP is different from the straight type channel, and because of the S-shaped channel, the expansion / contraction pressure loss at the entrance and exit to the fin, and Bending pressure loss was added and increased significantly.
[0035]
The shear distortion of the solder under the substrate was evaluated in the same manner as in the example. As a result, the strain, which was 3.8% without the slit 302, was reduced to 3.6% by the slit 302. This value was equivalent to 3.5% in the case of a flat plate, and the effect of the present invention was confirmed.
[0036]
(Example 3)
A third embodiment will be described with reference to FIGS. FIG. 4A is a schematic plan view, and FIGS. 4B and 4C are schematic cross-sectional views of AA and BB in FIG. FIG. 5 is an enlarged view of the substrate bonding portion shown in FIG.
[0037]
This embodiment is an embodiment in the case of the same configuration as the second embodiment. That is, this is a case where the direction of the linear fin 400 and the longitudinal direction of the copper-clad aluminum nitride substrate 100 match. In other words, if no countermeasure is taken, the copper base rigidity increases due to the fins, so that the solder distortion under the board increases remarkably. In this embodiment, the thickness of the substrate adhesive solder layer is controlled as a measure. This will be described with reference to FIG. 5 which is an enlarged view of the solder bonding portion.
[0038]
As described above, the concentration of the solder distortion is near the short side, which is the longitudinal end of the substrate 100. Therefore, the copper base 401 under the substrate 100 is formed to have a gentle upward convex shape at the center of the substrate. The height of the projection is about 0.1 mm. By setting the shape of the copper base 401 to this shape, the solder layer 500 can be thinner at the center of the substrate 100 and thicker toward the edge of the substrate. In this embodiment, the amount of solder is controlled so that the film thickness at the center of the substrate is about 0.1 mm and the film thickness at both ends is 0.2 mm. With this structure, the thickness of the substrate end where the stress is concentrated can be increased, so that the solder distortion can be greatly reduced. Even if the entire film thickness is simply set to 0.2 mm, the effect of reducing the solder distortion is the same or more. However, when the overall thickness is increased, the thermal resistance increases, and the effect of reducing the thermal resistance by providing fins decreases. .
[0039]
The entire flow path is the same as in the second embodiment. Rth (jw) was measured at a cooling water flow rate of 20 L / min. As a result, it was 0.135 K / W, which was slightly increased as compared with Example 2. The pressure loss and ΔP were 14 kPa, which was exactly the same as in the example. On the other hand, when the solder distortion was simulated, it was 3.3%, which was smaller than the case of a flat plate without fins. As described above, the present structure can be expected to greatly increase the life.
[0040]
(Example 4)
A fourth embodiment will be described with reference to FIG. FIG. 6A is a schematic plan view, and FIG. 6B is a schematic AA cross-sectional view of FIG. The embodiments described so far have been embodiments of the module structure and the cooling system for one three-phase module. Depending on the object for which the water-cooled inverter is used, for example, an inverter for an electric vehicle, it may be required that the two inverter functions be provided in one casing. For example, one for motor drive and one for generator. This embodiment is an embodiment corresponding to this case.
[0041]
Copper-clad aluminum nitride substrates 100 and 600 each having a power semiconductor pellet or the like mounted on a copper base 601 are mounted. The size of the copper base 601 is 20 cm × 23 cm. Although the thickness of the flat plate portion was set to 3 mm, it is desired that the thickness be as large as solder distortion under the substrate allows. This is for minimizing a warp or the like in an IGBT module assembling process as much as possible. The six substrates 100 constitute a three-phase module A, and the six substrates 600 similarly constitute a three-phase module B. In both cases, the voltage / current rating indicates the case of 600 V / 400 A. However, of course, either or both of them can be reduced by replacing the IGBT pellet 103 and the FWD pellet 104. The fins 603 and 604 have the same structure as the fin 114 of the first embodiment, and are disposed below the substrates 100 and 600, respectively. Note that the fins 603 and 604 can be changed according to the heat generation amount of the power semiconductor pellet. For example, when the loss of the three-phase module B is smaller than that of the module A, a change such as reducing the number of the fins 604 compared to the number of the fins 603 may be considered.
[0042]
The fins 603 and 604 were covered with a U-shaped channel cover to form one channel, and the cooling water was passed through to measure Rth (j−w) and ΔP. The flow rate of the cooling water is 10 L / min. This is because, unlike the previous embodiments, the cooling unit, that is, the fin unit is long in order to cool the two modules, and the loss in that part is large. Rth (j−w) increased by reducing the flow rate to 0.15 K / W, and ΔP was significantly reduced to 6 kPa.
[0043]
The solder distortion under the substrate is suppressed low because the same substrate arrangement structure as that of the first embodiment, that is, the straight fin is perpendicular to the longitudinal direction of the substrate.
[0044]
【The invention's effect】
According to the present invention, even if the fin is formed on the metal base, the fin direction of the linear fin and the longitudinal direction of the insulating substrate are arranged perpendicularly, so that the distortion of the solder under the insulating substrate is smaller than that of the flat plate without the fin. Does not increase. This is because the solder distortion under the substrate concentrates on the substrate edge in the longitudinal direction of the substrate, and the rigidity of the metal base with fins in this direction does not increase remarkably because it can be deformed at the finless portion. Also, even when the direction of the linear fins and the longitudinal direction of the insulating substrate are matched, if a slit is formed in the fin at the approximate center of the substrate and the fin is divided, it becomes easier to deform at this portion, and the rigidity is also reduced. Therefore, the solder distortion does not increase. Furthermore, when the direction of the linear fins and the longitudinal direction of the insulating substrate coincide with each other, if the solder layer in the longitudinal direction of the substrate is made thinner at the center of the substrate and becomes thicker toward the edge of the substrate, the film of the solder at the edge of the substrate can be formed. The increase in thickness has the effect of reducing stress and reducing solder distortion.
[Brief description of the drawings]
FIG. 1A is a schematic plan view showing the basic structure of the present invention, and FIG.
FIG. 2 is a schematic sectional view of a conventional water-cooled inverter.
FIGS. 3A and 3B are a schematic plan view and a schematic cross-sectional view of an embodiment of the present invention. FIGS.
FIG. 4A is a schematic plan view of an embodiment of the present invention, and FIGS. 4B and 4C are schematic cross-sectional views.
FIG. 5 is an enlarged sectional view of the embodiment shown in FIG. 5;
FIG. 6 is a schematic plan view of an embodiment of the present invention.
FIG. 7 shows an example of a solder distortion calculation result.
FIG. 8 shows an embodiment including a waterway cover.
[Explanation of symbols]
100, 600: copper-clad insulating substrate, 101, 201, 300, 401, 601: metal base, 102: module mounting hole, 103: IGBT pellet, 104: FWD pellet, 105: resistance pellet, 106: gate wire, 107 ... Emitter wire, 108 ... Cathode wire, 109 ... Thermistor, 110 ... Control terminal electrode (pad), 111 ... Control wiring wire, 112,602,605,606 ... Main terminal electrode (pad), 113 ... Main wiring wire , 114, 301, 400, 603, 604: fin, 115: fin width, 116: fin interval, 117: base thickness, 118: fin height, 119: insulating substrate length, 120, 303: fin length, 121: Overall fin width, 122, 123: Circuit pattern, 200: Power semiconductor module , 202: Fin, 203: Cooling channel, 204: Module mounting bolt, 205: Inverter cover, 206: Inverter cover mounting bolt, 207, 801: Water channel cover, 208: Water channel cover mounting bolt, 209, 802: Inverter case, 210 , 800, O-ring, 211, module mounting opening, 302, straight fin slit, 500, solder (layer), 803, O-ring groove, 804, water supply port, 805, drainage port.

Claims (12)

A power semiconductor module for switching a current, an insulating substrate having a circuit pattern for bonding the power semiconductor element, and a power semiconductor module having at least a metal base for bonding the insulating substrate,
On the surface opposite to the insulating substrate bonding surface of the metal base, there is a linear fin in a region below the insulating substrate, and the shape of the insulating substrate is such that the length of the linear fin in the stripe direction is A power semiconductor module characterized by being shorter than a vertical length of a vertical fin. A power semiconductor module having at least a power semiconductor element for switching a current, an insulating substrate with a circuit pattern for bonding the power semiconductor element, and a metal base for bonding the insulating substrate,
On the surface opposite to the insulating substrate bonding surface of the metal base, a linear fin is provided in a region below the insulating substrate, and the linear fin is divided in a region below the insulating substrate. Power semiconductor module. The power semiconductor module according to claim 1,
The power semiconductor module, wherein the insulating substrate is a ceramic substrate, the metal base is a copper base, and the power semiconductor chip and the ceramic substrate, and the ceramic substrate and the copper base are soldered, respectively. 4. The power semiconductor module according to claim 3, wherein said ceramic substrate is an aluminum nitride substrate. 4. The power semiconductor module according to claim 3, wherein a thickness of the solder layer that bonds the ceramic substrate and the copper base is such that a central portion of the ceramic substrate is thinner than both ends in a longitudinal direction of the ceramic substrate, The power semiconductor module according to claim 1, wherein a thickness of the power semiconductor module increases from the center toward the ends. A power semiconductor module comprising at least a power semiconductor element for switching a current, an insulating substrate with a circuit pattern for soldering the power semiconductor element, and a metal base for soldering the insulating substrate.
On the surface opposite to the insulating substrate bonding surface of the metal base, a linear fin is provided in a region below the insulating substrate, and the thickness of the solder layer for bonding the insulating substrate to the metal base in the fin direction is: A power semiconductor module, wherein the power semiconductor module is thinner at a central portion of the insulating substrate and becomes thicker toward both ends of the insulating substrate. A power semiconductor module having at least a power semiconductor element for switching a current, an insulating substrate with a circuit pattern for bonding the power semiconductor element, and a metal base for bonding the insulating substrate,
On the surface opposite to the insulating substrate bonding surface of the metal base, there are linear fins in a region below the insulating substrate, and the rigidity of the finned metal base is the same in the fin direction and the fin vertical direction. Characteristic power semiconductor module structure. An automobile, comprising an inverter circuit including the power semiconductor module according to any one of claims 1, 2, 6, and 7, and driving a motor. The power semiconductor module according to claim 1, wherein the insulating substrate is an alumina substrate, the metal base is a copper base, or an aluminum base, and the power semiconductor chip and the alumina substrate, the alumina substrate and the copper base, or A power semiconductor module, wherein each of the aluminum bases is bonded by soldering. 3. The power semiconductor module according to claim 2, wherein the linear fin is divided at a center of the insulating substrate. 11. The power semiconductor module according to claim 10, wherein a width of a region dividing the linear fin is 1 mm or less. 2. The power semiconductor module according to claim 1, wherein in the shape of the insulating substrate, a length of the linear fin in a stripe direction is shorter than a length in a vertical direction. 3.

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