JP6777109B2 - Semiconductor device, its manufacturing method and power conversion device - Google Patents

Description

The present invention relates to a molded semiconductor device sealed with a sealing resin, a method for manufacturing the same, and a power conversion device provided with the semiconductor device.

Generally, a semiconductor device is resin-sealed to protect a semiconductor element and to insulate a wiring circuit. Conventionally, a molded semiconductor device in which a semiconductor element and a wiring circuit are integrally resin-sealed using a mold has been known. The mold-type semiconductor device is superior in productivity and can be miniaturized as compared with the case-type semiconductor device in which the case is filled with a low-elasticity resin to protect the semiconductor element.

However, in a molded semiconductor device, a terminal such as a lead frame that forms a wiring circuit is sandwiched between molds to perform resin molding at the time of resin sealing, so that a complicated electronic circuit may be formed only by the lead frame. was difficult.

Therefore, as a conventional semiconductor device, a molded semiconductor device (for example, Patent Document 1) that is sealed including a control circuit substrate has been studied. Further, a molded semiconductor device (for example, Patent Document 2) that supports a control circuit board by using a pin hole provided on an outer peripheral portion of a heat sink of a lead frame has been studied.

Japanese Unexamined Patent Publication No. 2014-22444 Japanese Unexamined Patent Publication No. 2014-212208

However, in a conventional semiconductor device, in order to seal a control circuit board, a part of the control circuit board is sandwiched between molds to support the control circuit board in a hollow state and resin molding is performed. .. The support portion provided on the outer peripheral portion of the control circuit board protrudes from the mold to the outside, and by sandwiching the support portion between the upper mold and the lower mold, the resin is in a state where the movement of the control circuit board is restricted. It is molded (Patent Document 1). Further, in a conventional semiconductor device, resin molding is performed in a state where the control circuit board is supported by using pin holes provided on the outer periphery of the heat sink of the lead frame (Patent Document 2). For this reason, the semiconductor device is manufactured in a state in which the support portion provided on the outer peripheral portion of the control circuit board protrudes outward from the outer shape of the semiconductor device package, or in a state in which a pin hole is provided on the outer peripheral portion of the heat sink. In some cases, the package size of the semiconductor device becomes large and it cannot be miniaturized.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a small molded semiconductor device in which a circuit board is arranged in a hollow space.

A heat conductive member having a first hole, a metal member provided on the heat conductive member, on which a semiconductor element is mounted, a metal member having a second hole at a corresponding position above the first hole, and a metal member above the metal member. , A circuit board having a third hole at a corresponding position above the second hole, and a circuit board are included, and the first hole, the second hole, and the third hole are filled, and the heat conductive member, the metal member, and the circuit board are filled. A semiconductor device including a sealing member that integrally seals and.

According to the semiconductor device of the present invention, since the support portion provided on the outer peripheral portion of the circuit board is not provided, the semiconductor device can be miniaturized.

It is sectional drawing which shows the semiconductor device in Embodiment 1 of this invention. FIG. 5 is a schematic cross-sectional structure of the semiconductor device according to the first embodiment of the present invention in the alternate long and short dash line AA of FIG. It is a schematic cross-sectional structure near the end portion of the semiconductor device in Embodiment 1 of this invention. It is a schematic plane structure near the end portion of the semiconductor device in Embodiment 1 of this invention. It is a structural schematic diagram which shows the circuit board of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the other semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of another semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the other semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the other machined hole shape of the circuit board of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing method of another semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the other machined hole shape of the circuit board of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the semiconductor device in Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is sectional drawing which shows the other manufacturing process of the semiconductor device in Embodiment 2 of this invention. It is sectional drawing which shows the semiconductor device in Embodiment 3 of this invention. It is a schematic cross-sectional structure near the end portion of the semiconductor device in Embodiment 3 of this invention. It is a block diagram which shows the structure of the power conversion system which applied the power conversion apparatus in Embodiment 4 of this invention.

First, the overall configuration of the semiconductor device of the present invention will be described with reference to the drawings. It should be noted that the figure is a schematic one and does not reflect the exact size of the indicated components. In addition, those having the same reference numerals are the same or equivalent thereof, and this is common to the entire text of the specification.

Embodiment 1.
The semiconductor device according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 4.

FIG. 1 is a schematic cross-sectional structure diagram showing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional structure of the alternate long and short dash line AA of the semiconductor device according to the first embodiment of the present invention.

In FIG. 1, the semiconductor device 100 includes a heat conductive member 1, a lead frame 2 which is a metal member, a solder 3 which is a bonding material, a semiconductor element 4, a bonding wire 5, a circuit board 6, and a sealing resin 7 which is a sealing member. Is equipped with. Further, the heat conductive member 1 is provided with a through hole 8 which is a first hole, and the lead frame 2 is provided with a through hole 81 which is a second hole. Further, the circuit board 6 is provided with a machined hole 11 which is a third hole. Further, the circuit board 6 is included in the sealing resin in this cross-sectional direction. Further, the lead frame 2 includes a lead terminal portion which is a metal terminal portion protruding from the side surface of the sealing resin 7.

In FIG. 2, in this cross-sectional direction (one-dot chain line AA cross section in FIG. 1), both the heat conductive member 1 and the circuit board 6 are included in the sealing resin 7, and in the cross section in this direction, the sealing resin 7 is included. There is no part that protrudes to the outside of.

In FIGS. 1 and 2, the heat conductive member 1 includes a metal foil 1a and an insulating sheet 1b which is an insulating layer formed on the upper surface of the metal foil 1a. The insulating sheet 1b has a role of insulating the metal foil 1a and the lead frame 2 and dissipating heat generated by the semiconductor element 4 to the metal foil 1a via the insulating sheet 1b. As the metal foil 1a, a high thermal conductive member such as a copper plate, an aluminum plate, or a copper foil is used.

A thermosetting resin such as an epoxy resin is used for the insulating sheet 1b, and a highly conductive filler such as silica, alumina, or boron nitride is mixed therein.

The heat conductive member 1 has at least three through holes 8 in the plane. In the semiconductor device 100, the through hole 8 is filled with the sealing resin 7. The size of the through hole 8 is preferably 0.5 mm or more (Φ0.5 mm or more) in diameter because it is necessary to insert the movable support pin 13 of the mold at the time of manufacturing as described later.

The through hole 8 may be formed at the same time when the outer shape is processed by punching or the like of the heat conductive member 1, or may be separately processed by wire cutting or the like. The heat conductive member 1 is resin-sealed by exposing the lower surface of the metal foil 1a on the lower surface side, and the surface on the lower surface side of the metal foil 1a and the surface of the sealing resin 7 filled in the through hole 8 are on the same plane. It is molded to be.

A lead frame 2 on which a wiring circuit is formed is provided on the heat conductive member 1. The lead frame 2 is arranged on the insulating sheet 1b of the heat conductive member 1. On the wiring circuit of the lead frame 2, the back electrode of the semiconductor element 4 is bonded via a solder 3 which is a bonding material. The surface electrode of the semiconductor element 4 and the lead frame 2 are electrically connected by a bonding wire 5 at a predetermined position of the lead frame 2.

The lead frame 2 has at least three through holes 81 in the plane at corresponding positions above the through holes 8 of the heat conductive member 1. In the semiconductor device 100, the through hole 81 is filled with the sealing resin 7. The size of the through hole 81 is preferably 0.5 mm or more (Φ0.5 mm or more) in diameter because it is necessary to insert the support pin 13 provided in the mold at the time of manufacturing as described later.

FIG. 3 is a schematic cross-sectional structure near the end of the semiconductor device according to the first embodiment of the present invention. FIG. 4 is a schematic plan view of the planar structure in the vicinity of the end portion of the semiconductor device according to the first embodiment of the present invention. In the figure, as the lead frame 2, for example, a copper plate having a thickness of about 0.6 mm is used. A wiring circuit is formed on the lead frame 2 by press molding. Further, the wiring circuit of the lead frame 2 has a stepped portion 9. The stepped portion 9 of the lead frame 2 is not joined to the heat conductive member 1 and is a portion where the sealing resin 7 has entered. The stepped portion 9 of the lead frame 2 has a structure for suppressing dielectric breakdown along the interface between the metal foil 1a of the heat conductive member 1 and the sealing resin 7. The step portion 9 of the lead frame 2 is a step between the lead frame 2 and the heat conductive member 2.

The stepped portion 9 of the lead frame 2 is formed, for example, by performing a half punching process. The height of the stepped portion 9 of the lead frame 2 (distance from the upper surface of the insulating sheet 1b to the lower surface of the lead frame 2) is, for example, 0.1 mm or more and 0.3 mm or less, which is half the thickness of the lead frame 2. .. By setting the thickness to 0.1 mm or more, it is possible to suppress the generation of voids in the sealing resin 7 filled between the heat conductive member 1 and the lead frame 2.

Further, the strength can be ensured by setting the distance from the insulating sheet 1b, which is a step in the step portion 9, to the lead frame 2 to 0.3 mm or less, which is half the thickness of the lead frame 2. Further, by providing the step portion 9 and filling the step portion 9 with the sealing resin 7, the withstand voltage between the metal foil 1a of the heat conductive member 1 and the lead frame 2 can be improved.

Further, the lead frame 2 forms a gap 10 with a range within 0.1 mm outside the periphery (outer circumference) of the through hole 8 formed in the heat conductive member 1 as a prohibited region. The gap 10 is set so as to be equal to or longer than the insulation distance between the lead frame 2 and the metal foil 1a. The minimum insulating distance is the thickness of the insulating sheet 1b and the distance from the peripheral edge portion (outer peripheral portion) of the through hole 8 to the peripheral edge portion (outer peripheral portion) of the through hole 81. Therefore, by setting the distance (length) of the gap 10 to be equal to or greater than the sum of the thickness of the insulating sheet 1b and the distance to the outer peripheral portion of the through hole 81, dielectric breakdown between the lead frame 2 and the metal foil 1a is suppressed. be able to. The wiring circuit pattern composed of the lead frame 2 is not arranged in the gap 10.

Here, the distance from the outer peripheral end of the through hole 8 to the outer peripheral end of the through hole 81 is the gap 10. Therefore, the through hole 81 is a hole having a larger radius than the through hole 8 by a gap 10. Further, the inside of the through hole 8 and the through hole 81 is filled with the sealing resin 7. Therefore, it is possible to suppress dielectric breakdown between the lead frame 2 and the metal foil 1a at the portions where the through holes 8 and the through holes 81 are formed.

The semiconductor element 4 includes a diode used in a converter unit that converts input AC power into DC power, a bipolar transistor used in an inverter unit that converts DC power into AC power, an IGBT (Insulated Gate Bipolar Transistor), and a MOSFET (Metal Oxide Semiconductor Field). There are Effect Transistor), GTO (Gate Turn-Off thyristor), and the like.

As the bonding wire 5, for example, an aluminum wire, a copper wire, or the like can be used. Since the bonding wire 5 is also used for electrical connection with the circuit board 6 and at the same time for supporting the circuit board 6, the bonding wire 5 is also required to have rigidity for supporting the circuit board 6. .. Therefore, the bonding wires 5 need to have a certain thickness and a certain number of wires. Further, although an example in which the solder 3 is used as the bonding material between the lead frame 2 and the semiconductor element 4 is shown, the solder 3 is not limited to the solder 3, and for example, a silver paste can be used.

The circuit board 6 is arranged above the lead frame 2 in the semiconductor device 100, and is electrically connected to the lead frame 2 by a bonding wire 5. Further, as described above, the circuit board 6 is hollowly supported above the lead frame 2 by the bonding wire 5.

The circuit board 6 includes a resin substrate on which a wiring pattern (not shown) is formed, and electrical components (not shown) mounted on the wiring pattern of the resin substrate. As the resin substrate, for example, one generally used for electronic devices having a thickness of 1.6 mm can be used, but the thickness of the resin substrate is not limited to this.

Further, the heat resistance grade of the resin substrate is not limited to FR-4, and when silicon carbide (SiC: Silicon Carbide) is used as the semiconductor element 4 mounted on the lead frame 2 and high temperature operation of the element is assumed. A resin substrate equivalent to FR-5 having a high heat resistance grade can also be used.

The electrical components are preferably mounted on both sides (upper and lower surfaces) of the circuit board 6, but may be mounted on one side. Since the electric components are mounted on both sides of the circuit board 6, the difference in the coefficient of thermal expansion between the front and back surfaces (upper and lower surfaces) of the circuit board 6 is suppressed against the thermal stress generated in the temperature cycle, and the rigidity is further increased. As a result, the warp generated in the circuit board 6 can be suppressed.

Further, by mounting the electric components on both sides (upper and lower surfaces) of the resin substrate, the area of the resin substrate can be suppressed to about half that of the single-sided mounting, and the semiconductor device 100 can be downsized. The wiring pattern on the upper surface of the circuit board 6 and the lead frame 2 are connected by the bonding wire 5, and before the resin is sealed, the wiring pattern is floated in the air due to the rigidity of the bonding wire 5. Therefore, the lead frame 2 with the circuit board 6 can be put into the mold, and the mold resin can be molded.

FIG. 5 is a schematic structural diagram showing a circuit board of the semiconductor device according to the first embodiment of the present invention. FIG. 6 shows a schematic view of the upper surface structure of the circuit board 6 and a schematic view of the cross-sectional structure of the alternate long and short dash line BB of FIG. In the figure, the circuit board 6 has machined holes 11 that vertically penetrate the circuit board 6 at three locations. The machined hole 11 is a region into which the support pin 13 described later is inserted. The machined hole 11 has a different diameter of the machined hole 11 between the upper surface of the circuit board 6 which is the upper surface side of the semiconductor device 100 and the lower surface of the circuit board 6 which is the lead frame 2 side, and the machined hole 11 is the machined hole 11 on the lower surface side of the circuit board 6. The diameter of the circuit board 6 is larger than the diameter of the machined hole 11 on the upper surface side of the circuit board 6. That is, looking at the schematic cross-sectional structure of the alternate long and short dash line BB in FIG. 5, the shape of the machined hole 11 is a trapezoidal shape. Actually, the shape of the machined hole 11 is a truncated cone shape penetrating the upper and lower surfaces of the circuit board 6. Further, the diameter of the machined hole 11 on the upper surface side of the circuit board 6 is smaller than the diameter of the support pin 13. The machined hole 11 is provided at a corresponding position above the through hole 81 of the lead frame 2 for passing the support pin 13.

By making the shape of the machined hole 11 into a truncated cone shape, the support pin 13 stops in the middle of the machined hole 11, so that the circuit board 6 can be supported by the support pin 13. The machined hole 11 is machined by drilling, milling, grinding, or the like, but does not particularly specify a machining method. Since the machined holes 11 are intended to support the circuit board 6 in a hollow manner while maintaining parallelism when the mold is mounted, they are arranged at least three places, preferably four or more places including the four corners of the circuit board 6. It is desirable to be done. The heat conductive member 1 and the lead frame 2 are formed with through holes 8 and through holes 81 corresponding to the number of machined holes 11. The circuit board 6 can be supported horizontally by providing the machined holes 11 at three or more places in this way.

A through hole 8 is formed in the heat conductive member 1, a through hole 81 is formed in the lead frame 2, and a machined hole 11 is formed in the circuit board 6, and the through hole 8 and the through hole are formed to pass the support pin 13. The 81 and the machined hole 11 are arranged on the same straight line in the direction perpendicular to the surface of the heat conductive member 1. The diameter of the through hole 8 of the heat conductive member 1 and the diameter of the machined hole 11 on the surface (lower surface) side facing the heat conductive member 1 of the circuit board 6 should be the same size or the diameter of the machined hole 11 should be larger. desirable.

The sealing resin 7 is formed so that the lead frame 2, the heat conductive member 1, the semiconductor element 4, and the circuit board 6 are integrally sealed. In the first embodiment, the lower surface of the metal foil 1a of the heat conductive member 1 is not covered with the sealing resin 7 and is exposed to the outside.

The sealing resin 7 secures the insulating property between the sealed members and functions as a case of the semiconductor device 100. As a molding method of the sealing resin 7, for example, transfer molding, injection molding, compression molding and the like can be used. Further, as the material of the sealing resin 7, for example, an epoxy resin containing a filler, a phenol resin, or the like can be used.

Next, a method of manufacturing the semiconductor device 100 according to the first embodiment, which is configured as described above, will be described.

6 to 12 are schematic cross-sectional structures showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention. 6 to 12 are schematic cross-sectional structures showing each manufacturing process of the semiconductor device according to the first embodiment of the present invention. The semiconductor device 100 can be manufactured by going through the steps of FIGS. 6 to 12.

First, as shown in FIG. 6, a heat conductive member 1 in which a metal foil 1a and an insulating sheet 1b are bonded together, a lead frame 2 in which a semiconductor element 4 is bonded and wired by a bonding wire 5, and an electric component are placed on a wiring pattern. The mounted circuit board 6 is manufactured. The heat conductive member 1 is formed with a through hole 8 that penetrates the metal foil 1a and the insulating sheet 1b. A through hole 81 is formed in the lead frame 2 at a corresponding position above the through hole 8 in order to pass the support pin 13. The circuit board 6 is formed with machined holes 11 penetrating the upper and lower surfaces of the circuit board 6. The machined hole 11 is formed at a corresponding position above the through hole 81 for passing the support pin 13. The outer peripheral portion of the through hole 81 is formed so as to be located at a position separated by a gap 10 from the outer peripheral portion of the through hole 8. After manufacturing these, the lead frame 2 is mounted on the insulating sheet 1b of the heat conductive member 1. A circuit board 6 connected to and supported by the lead frame 2 by a bonding wire 5 is arranged above the lead frame 2 (base material preparation step). At this time, the through hole 8 of the heat conductive member 1 and the machined hole 11 of the circuit board 6 can pass the support pin 13 and are on the same straight line in the direction perpendicular to the surface of the heat conductive member 1. , The heat conductive member 1 and the circuit board 6 are arranged.

Next, as shown in FIG. 7, after connecting the heat conductive member 1, the lead frame 2, and the circuit board 6, they are arranged in the lower mold 12 provided with the support pins 13 (base material in the lower mold). Placement process). At this time, a columnar support pin 13 protruding from the lower mold 12 into the mold is inserted from the lower mold 12 through the through hole 8 to the machined hole 11 of the circuit board 6, and the circuit board 6 is formed into the mold. It is hollow and supported inside. The machined hole 11 is machined so that the diameter decreases from the side facing the lead frame 2 toward the opposite surface, and the support pin 13 comes into contact with the side surface of the machined hole 11 in the middle of the machined hole 11 ( The circuit board 6 can be supported by being caught). Further, the lower surface of the metal foil 1a of the heat conductive member 1 is arranged in contact with the surface (inner upper surface) of the lower mold 12. The support pin 13 is designed to be movable during molding resin molding, and the support pin 13 is pulled out as the sealing resin 7 is filled, and finally the sealing resin 7 is formed in the through hole 8 and the machined hole 11. It is filled. Therefore, since the support pin 13 is moved in the mold, the members such as the bonding wire 5 are arranged at positions where they do not come into contact with the support pin 13. Here, the diameter of the support pin 13 is smaller than the diameter on the lower surface side of the circuit board 6 of the truncated cone-shaped machined hole 11, and is larger than the diameter on the upper surface side of the circuit board 6. By supporting the circuit board 6 with the support pins 13, the deviation of the circuit board 6 due to the injection pressure of the sealing resin 7 can be suppressed.

Next, as shown in FIGS. 8 and 9, the upper mold 14 is arranged so as to sandwich the lead terminal portion of the lead frame 2 with the lower mold 12 (upper mold installation step). By sandwiching the lead terminal portion of the lead frame 2 at the lead terminal fixing positions provided on the upper mold 14 and the lower mold 12, the misalignment of the lead frame 2 during molding is suppressed, and the lead is formed in the mold. The frame 2 can be fixed.

Next, as shown in FIGS. 10 and 11, the upper mold 14 and the lower mold 12 are surrounded, and the heat conductive member 1, the lead frame 2, and the circuit board 6 are sealed inside the mold. The resin 7 is filled (sealing member filling step). FIG. 10 schematically shows a state in the middle stage of filling the inside of the mold of the sealing resin 7. The sealing resin 7 is filled, for example, from an injection port provided on the left side of the mold. FIG. 11 schematically shows the state after filling the inside of the mold with the sealing resin 7 and then pulling out the support pin 13 from the inside of the mold. After filling the sealing resin 7 into the mold, the support pin 13 is pulled out from the inside of the lower mold before the sealing resin 7 is cured (support pin pulling step). After that, by pressurizing the inside of the mold, the sealing resin 7 is filled in the through hole 8 and the through hole 81 and the machined hole 11 from which the support pin 13 is pulled out, and the through hole 8 and the through hole 81 and the machined hole are filled. No. 11 is embedded with the sealing resin 7 (repressurization (filling) step in the mold). Therefore, the insulating property can be improved as compared with the case where the through hole 8, the through hole 81, and the processed hole 11 are not filled with the sealing resin 7.

As a condition for filling (injecting) the sealing resin 7 into the mold, for example, injection can be performed by operating the injection speed at 1 mm / sec. At this time, the sealing resin 7 injected into the mold is so viscous that the support pin 13 can be pulled out through the lower mold. After pulling out the support pin 13, for example, by holding pressure at 10 MPa after injection, the sealing resin 7 can be refilled in the through hole 8, the through hole 81, and the machined hole 11. After filling the sealing resin 7, a curing treatment is performed. For example, the curing treatment condition of the sealing resin 7 is 150 ° C. for 2 hours (sealing member curing step). By performing the curing treatment in this way, the filled sealing resin 7 is cured. Further, the curing treatment conditions for the sealing resin 7 may be appropriately selected according to the material of the sealing resin 7 and the like.

By going through the above main manufacturing steps, the semiconductor device 100 shown in FIG. 12 can be manufactured.

FIG. 13 is a schematic cross-sectional structure diagram showing another manufacturing process of the semiconductor device according to the first embodiment of the present invention. When the upper mold 14 shown in FIG. 9 is arranged in the manufacturing process of the semiconductor device 100 described above, the circuit board 6 is sealed by pressing the circuit board 6 with the holding pin 15 from the upper mold 14 as shown in FIG. It is possible to suppress the lifting of the circuit board 6 when the waterproof resin 7 is filled into the mold.

More specifically, as shown in FIG. 13, the holding pin 15 protrudes from the upper mold 14 at a position in contact with the circuit board 6 at a position inside the machined hole 11 of the circuit board 6. , The holding pin 15 is arranged. By arranging the holding pins 15 in this way, even if the circuit board 6 is floated due to the flow of the sealing resin 7 only with the support pins 13 from the lower mold 12 during molding, the circuit board 6 can be floated. Lifting can be suppressed. Further, the holding pin 15 from the upper mold 14 is also pulled out from the upper mold 14 after filling the inside of the mold with the sealing resin 7 in the same manner as the support pin 13 of the lower mold 12. Since the sealing resin 7 is filled in the portion where the pressing pin 15 was located after being pulled out, the portion where the pressing pin 15 was located does not remain after molding.

After that, the semiconductor device 100 can be manufactured by going through the steps shown in FIGS. 10 to 12. By going through such a manufacturing process, the circuit board 6 is included (embedded) inside the sealing resin 7, so that the circuit board 6 is molded with the molding resin without being exposed on the outer peripheral portion of the sealing resin 7. To. For this reason, since the support portion for supporting the circuit board 6 is eliminated, it is possible to use a region where the terminals of the lead frame 2 could not be arranged in the past. Therefore, the terminals exposed to the outside of the lead frame 2 can be arranged. A semiconductor device 100 that has few restrictions and can be miniaturized can be obtained. The presser pin 15 from the upper mold 14 may be intentionally left pressed against the circuit board 6 to leave a mark of the presser pin 15 on the upper surface side of the sealing resin 7.

FIG. 14 is a schematic cross-sectional structure diagram showing another semiconductor device according to the first embodiment of the present invention. FIG. 15 is a schematic cross-sectional structure showing the shape of another machined hole in the circuit board of the semiconductor device according to the first embodiment of the present invention. FIG. 16 is a schematic cross-sectional structure diagram showing a method of manufacturing another semiconductor device according to the first embodiment of the present invention. FIG. 17 is a schematic cross-sectional structure showing the shape of another machined hole in the circuit board of the semiconductor device according to the first embodiment of the present invention.

The shape of the machined hole 11 formed in the circuit board 6 may be a two-stage shape as shown in FIGS. 14 and 15. When the machined hole 11 has a two-stage shape as described above, the diameter of the hole on the upper surface side of the circuit board 6 is small, and the circuit board 6 is supported by contacting the upper part of the support pin 13 at this portion. Further, it may be a circular non-penetrating hole as shown in FIGS. 16 and 17. By making the depth of the machined hole 11 shallower than the thickness of the circuit board 6, the shape becomes non-penetrating. When the shape of the machined hole 11 is a non-penetrating shape in this way, the circuit board 6 is supported by contacting the upper part of the support pin 13 at the portion where the machined hole 11 is non-penetrating. As described above, the shape of the machined hole 11 is any shape as long as the support pin 13 is passed through the machined hole 11 and the support pin 13 is in contact with the machined hole 11 in the middle of the machined hole 11 to support the circuit board 6. It can also be applied to a machined hole 11 having a different shape.

In the semiconductor device 100 configured as described above, the heat conductive member 1 is provided with a through hole 8, the lead frame 2 is provided with a through hole 81, and the circuit board 6 is provided with a machined hole 11 to penetrate through the through hole 8. The holes 81 and the machined holes 11 are arranged on the same straight line in the direction perpendicular to the surface of the heat conductive member 1, and the circuit board 6 is supported by the support pins 13 to eliminate the support portion provided on the outer peripheral portion of the circuit board 6. Therefore, the semiconductor device can be miniaturized.

Further, since the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the degree of freedom in arranging the lead portion of the lead frame 2 is widened, and the restriction on the arrangement of the terminals protruding from the sealing resin 7 to the outside can be eliminated. it can.

Embodiment 2.
The second embodiment is different in that the connection with the circuit board 6 used in the first embodiment is changed from the bonding wire 5 to the connecting member 19. In the first embodiment, the bonding wire 5 connecting the lead frame 2 and the circuit board 6 is provided with rigidity for supporting the circuit board 6, but in the present embodiment, it is not necessary to particularly support the bonding wire 5. It suffices if the lead frame 2 and the circuit board 6 can be electrically connected. Since the connection with the circuit board 6 is used as the connecting member in this way, the support portion provided on the outer peripheral portion of the circuit board 6 can be eliminated, and the semiconductor device can be miniaturized. Since the other points are the same as those in the first embodiment, detailed description thereof will be omitted.

Even in such a case, the heat conductive member 1 is provided with a through hole 8, the lead frame 2 is provided with a through hole 81, the circuit board 6 is provided with a machined hole 11, and the through hole 8, the through hole 81, and the machined hole 11 are provided. And are arranged on the same straight line in the direction perpendicular to the surface of the heat conductive member 1, and the circuit board 6 is supported by the support pins 13 and the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated. It can be miniaturized.

FIG. 18 is a schematic cross-sectional structure diagram showing the semiconductor device according to the second embodiment of the present invention. In FIG. 18, the semiconductor device 200 includes a heat conductive member 1, a lead frame 2, a solder 3 as a bonding material, a semiconductor element 4, a bonding wire 5, a circuit board 6, a sealing resin 7 as a sealing member, and a connecting member 19. Is equipped with. Further, the heat conductive member 1 is provided with a through hole 8 which is a first hole, and the lead frame 2 is provided with a through hole 81 which is a second hole. Further, the circuit board 6 includes a machined hole 11 which is a third hole and a lead frame holding pin hole 17 which is a fourth hole.

The sealing resin 7 has a pin mark 18 on the upper surface thereof. The connection between the lead frame 2 and the circuit board 6 is different from that of the first embodiment as long as it can electrically connect the lead frame 2 and the circuit board 6, and may be a bonding wire, a lead terminal, or the like. In the second embodiment, since it is not necessary to hold (support) the circuit board 6 in a hollow state, the connecting member 19 does not need to have rigidity, and a method in which the lead frame 2 and the circuit board 6 can be electrically connected is used. Even if a bonding wire is used, the number of connected wires can be reduced if it is electrically acceptable.

The circuit board 6 is arranged above the lead frame 2 in the semiconductor device 200, and is electrically connected to the lead frame 2 by a connecting member 19. The circuit board 6 has a machined hole 11 that penetrates the circuit board 6 vertically, and the machined hole 11 is the upper surface of the circuit board 6 that is the upper surface side of the semiconductor device 200 and the circuit board 6 that is the lead frame 2 side. The diameter of the machined hole 11 is different from that of the lower surface of the circuit board 6, and the diameter of the machined hole 11 on the lower surface side of the circuit board 6 is larger than the diameter of the machined hole 11 on the upper surface side of the circuit board 6. That is, when looking at the cross-sectional view, the shape of the machined hole 11 is a trapezoidal shape. Actually, the shape of the machined hole 11 is a truncated cone shape penetrating the upper and lower surfaces of the circuit board 6. Further, the diameter of the machined hole 11 on the upper surface side of the circuit board 6 is smaller than the diameter of the support pin 13. Further, the connecting member 19 is used for electrical connection between the lead frame 2 and the circuit board 6. Therefore, as the connecting member 19, a part of the lead frame 2 may be used, or a bonding wire 5 having a reduced number (loss of rigidity) may be used. For example, when the bonding wire 5 is used, the diameter of the bonding wire 5 is required to be about 400 μm in the first embodiment, but it is about 100 μm in the second embodiment. Further, when the bonding wires 5 having the same diameter are used, the number of bonding wires 5 in the second embodiment may be smaller than that in the first embodiment.

Next, a method of manufacturing the semiconductor device 200 of the second embodiment configured as described above will be described.

Basically, the semiconductor device 200 can be manufactured by going through the steps of FIGS. 6 to 12 shown in the first embodiment. In the second embodiment, the holding pin 15 arranged on the upper mold 14 shown in FIG. 13 is used as the holding pin 15 and the lead frame holding pin 16, and the circuit board 6 is provided with the lead frame holding pin hole 17. It's different.

When the sealing resin 7 is filled inside the mold, the sealing resin 7 may slip between the lead frame 2 and the insulating sheet 1b and the lead frame 2 may float. In order to suppress such floating of the lead frame 2, a lead frame holding pin 16 having a diameter smaller than that of the holding pin 15 is provided at the tip (lower portion) of the holding pin 15 of the circuit board 6, and a lead frame holding pin 16 having a smaller diameter is provided. The lead frame 2 may be pressed by passing only the pin 16 through the lead frame holding pin hole 17 provided in the circuit board 6. Since the holding pin 15 and the lead frame holding pin 16 have an effect of preventing floating even if they do not completely contact the lead frame 2 or the circuit board 6, the circuit board 6 and the lead frame 2 are in contact with each other at the time of molding. It does not have to be.

As the shape of the semiconductor device 200 after molding, pin marks 18 are formed on the upper surface of the sealing resin 7. This is a trace of the holding pin 15 of the circuit board 6 or the holding pin 16 of the lead frame 2 in the manufacturing process described later.

FIG. 19 is a schematic cross-sectional structure diagram showing a manufacturing process of the semiconductor device according to the second embodiment of the present invention. FIG. 20 is a schematic cross-sectional structure diagram showing a manufacturing process of the semiconductor device semiconductor device according to the second embodiment of the present invention. FIG. 21 is a schematic cross-sectional structure diagram showing a manufacturing process of the semiconductor device according to the second embodiment of the present invention. FIG. 22 is a schematic cross-sectional structure diagram showing a manufacturing process of the semiconductor device according to the second embodiment of the present invention. In the manufacturing process of the semiconductor device 100 described above, instead of the case where the upper mold 14 shown in FIG. 13 is arranged and the circuit board 6 is pressed by the pressing pin 15, the pressing pin 15 is used as shown in FIGS. The lead frame holding pin 16 is arranged at the lower portion (lead frame 2 side), and the lead frame 2 can be held by the lead frame holding pin 16 through the lead frame holding pin hole 17 provided in the circuit board 6. At the same time, the circuit board 6 can be pressed by the pressing pin 15.

Then, as shown in FIG. 11, the mold is filled with the sealing resin 7. After filling the mold with the sealing resin 7, as shown in FIG. 21, the support pin 13 is pulled out from the lower mold 12 and the lead frame holding pin 16 is pulled out from the upper mold 14 (support pin pulling step). At this time, the holding pin 15 of the circuit board 6 is left in the mold. After that, by pressurizing the inside of the mold, the sealing resin 7 is filled in the through hole 8 from which the support pin 13 is pulled out, the machined hole 11, and the hole 17 for the lead frame 2 holding pin, and the through hole 8 is processed. The hole 11 is embedded with the sealing resin 7 (repressurization (filling) step in the mold). In this way, the portion where the support pin 13 and the holding pin 16 of the lead frame 2 were located after being pulled out is filled with the sealing resin 7, so that the support pin 13 and the lead frame 2 are held down after molding. The place where the pin 16 was located does not remain. Since the sealing resin 7 is not filled in the portion of the circuit board 6 where the holding pin 15 is located, a recess is formed on the upper surface side of the sealing resin 7 as a pin mark 18.

After filling the sealing resin 7, a curing treatment is performed. For example, the curing treatment condition of the sealing resin 7 is 150 ° C. for 2 hours (filling member curing step). By performing the curing treatment in this way, the filled sealing resin 7 is cured. Further, the curing treatment conditions for the sealing resin 7 may be appropriately selected according to the material of the sealing resin 7 and the like. After the sealing resin 7 is cured, it is taken out from the mold.

By going through the above main manufacturing steps, the semiconductor device 200 shown in FIG. 22 can be manufactured.

FIG. 23 is a schematic cross-sectional structure showing another manufacturing process of the semiconductor device according to the second embodiment of the present invention. In the method for manufacturing the semiconductor device 200 described above, the semiconductor device 200 can be manufactured in the same manner even if FIG. 21 is replaced with FIG. 23. In FIG. 23, in FIG. 21, instead of pulling out only the holding pin 16 of the lead frame 2 from the upper mold 14, the holding pin 15 and the lead frame holding pin 16 are integrated and only the holding pin 15 is pulled out from the upper mold 14. It can be dealt with.

In the semiconductor device 200 configured as described above, the heat conductive member 1 is provided with a through hole 8, the circuit board 6 is provided with a machined hole 11, and the through hole 8 and the machined hole 11 are formed on the surface of the heat conductive member 1. Since the semiconductor device is arranged on the same straight line in the vertical direction, the circuit board 6 is supported by the support pins 13, and the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the semiconductor device can be miniaturized.

Further, since the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the degree of freedom in arranging the lead portion of the lead frame 2 is widened, and the restriction on the arrangement of the terminals protruding from the sealing resin 7 to the outside can be eliminated. it can.

Further, since the lead frame holding pin 16 is provided to hold the lead frame 2, the wraparound of the sealing resin 7 to the lower surface of the lead frame 2 can be reduced, and the floating of the lead frame 2 can be suppressed.

Although the lead frame holding pin 16 is provided in the second embodiment, the lead frame holding pin 16 may not be used when the injection condition of the sealing resin 7 in consideration of the floating of the lead frame 2 is used. .. In that case, it is not necessary to form the lead frame holding pin hole 17.

Embodiment 3.
In the third embodiment, the gap 10 which is a prohibited area with the lead frame 2 used in the first embodiment is a step portion 91 similar to the step portion 9 provided on the outer peripheral portion of the lead frame 2. different. In this way, the step portion 91 is provided at the corresponding position above the through hole 81 of the lead frame 2 to secure the distance between the lead frame 2 and the metal foil 1b, so that the gap in the prohibited region at the end of the lead frame 2 Even when the distance between 10 and the through hole 8 of the heat conductive member 1 becomes short, the distance between the end of the lead frame 2 and the heat conductive member 1 can be secured, so that the insulating property of the semiconductor device 300 can be ensured. it can. Since the other points are the same as those in the first embodiment, detailed description thereof will be omitted.

FIG. 24 is a schematic cross-sectional structure diagram showing the semiconductor device according to the third embodiment of the present invention. In FIG. 24, the semiconductor device 300 includes a heat conductive member 1, a lead frame 2, a solder 3 as a bonding material, a semiconductor element 4, a bonding wire 5, a circuit board 6, and a sealing resin 7 as a sealing member. .. Further, the heat conductive member 1 is provided with a through hole 8 which is a first hole, and the lead frame 2 is provided with a through hole 81 which is a second hole. Further, the circuit board 6 is provided with a machined hole 11 which is a third hole.

FIG. 25 is a schematic cross-sectional structure near the end of the semiconductor device according to the third embodiment of the present invention. In the figure, the lead frame 2 includes a step portion 91 in the lead frame 2 at a position corresponding to the gap 10 of the through hole 81. The step portion 91 is a portion where the sealing resin 7 has entered. The stepped portion 91 of the lead frame 2 has a structure for suppressing dielectric breakdown along the interface between the metal foil 1a of the heat conductive member 1 and the sealing resin 7. The step portion 91 has a step distance required for ensuring the insulating property between the heat conductive member 1 and the lead frame 2. Therefore, even if the gap 10 in the prohibited region of the lead frame 2 is not sufficient for ensuring the insulating property, the gap of the step portion 91 is provided so as to be a sufficient distance for ensuring the insulating property. By setting, the insulation property of the semiconductor device 300 can be ensured. The distance from the upper surface of the insulating sheet 1b, which is the upper surface of the heat conductive member 1, to the lower surface of the step portion 91 corresponds to the gap 10. Further, from the viewpoint of ensuring the dielectric strength, the gap 10 is secured on the outer peripheral portion of the through hole 8 even when the step portion 91 is provided.

The step portion 91 of the lead frame 2 is a step between the lead frame 2 and the heat conductive member 2. The stepped portion 91 of the lead frame 2 is formed, for example, by performing a half punching process. The height of the stepped portion 91 of the lead frame 2 (distance from the upper surface of the insulating sheet 1b of the heat conductive member 1 to the lower surface of the stepped portion 91) is, for example, 0.1 mm or more and 0, which is half the thickness of the lead frame 2. .3 mm or less. By setting the thickness to 0.1 mm or more, it is possible to suppress the generation of voids in the sealing resin 7 filled between the heat conductive member 1 and the lead frame 2.

Further, the strength can be ensured by setting the thickness to 0.3 mm or less, which is half the thickness of the lead frame 2. Further, by providing the step portion 91 and filling the step portion 91 with the sealing resin 7, the withstand voltage between the metal foil 1a of the heat conductive member 1 and the lead frame 2 can be improved.

In the semiconductor device 300 configured as described above, the heat conductive member 1 is provided with a through hole 8, the lead frame 2 is provided with a through hole 81, and the circuit board 6 is provided with a machined hole 11 to penetrate through the through hole 8. The holes 81 and the machined holes 11 are arranged on the same straight line in the direction perpendicular to the surface of the heat conductive member 1, and the circuit board 6 is supported by the support pins 13 to eliminate the support portion provided on the outer peripheral portion of the circuit board 6. Therefore, the semiconductor device can be miniaturized.

Further, since the support portion provided on the outer peripheral portion of the circuit board 6 is eliminated, the degree of freedom in arranging the lead portion of the lead frame 2 is widened, and the restriction on the arrangement of the terminals protruding from the sealing resin 7 to the outside can be eliminated. it can.

Further, since the step portion 91 is provided at the corresponding position above the through hole 81 of the lead frame 2, the semiconductor while ensuring the insulation in the gap 10 of the prohibited region at the end of the through hole 81 of the lead frame 2. The device can be miniaturized.

Embodiment 4.
In the fourth embodiment, the semiconductor device according to the first to third embodiments described above is applied to the power conversion device. Although the present invention is not limited to a specific power conversion device, the case where the present invention is applied to a three-phase inverter will be described below as a fourth embodiment.

FIG. 26 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the sixth embodiment of the present invention is applied.

The power conversion system shown in FIG. 26 includes a power supply 1000, a power conversion device 2000, and a load 3000. The power supply 1000 is a DC power supply and supplies DC power to the power converter 2000. The power supply 1000 can be composed of various things, for example, a DC system, a solar cell, a storage battery, a rectifier circuit connected to an AC system, an AC / DC converter, or the like. Good. Further, the power supply 1000 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

The power conversion device 2000 is a three-phase inverter connected between the power supply 1000 and the load 3000, converts the DC power supplied from the power supply 1000 into AC power, and supplies AC power to the load 3000. As shown in FIG. 26, the power conversion device 2000 converts the DC power input from the power supply 1000 into AC power and outputs the main conversion circuit 2001, and the main conversion circuit 2001 controls the control signal for controlling the main conversion circuit 2001. It is provided with a control circuit 2003 that outputs to.

The load 3000 is a three-phase electric motor driven by AC power supplied from the power converter 2000. The load 3000 is not limited to a specific application, and is an electric motor mounted on various electric devices. For example, the load 3000 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, an air conditioner, or the like.

The details of the power converter 2000 will be described below. The main conversion circuit 2001 includes a switching element built in the semiconductor device 2002 and a freewheeling diode (not shown), and the DC power supplied from the power supply 1000 is converted into AC power by switching the switching element. And supply to the load 3000. There are various specific circuit configurations of the main conversion circuit 2001, but the main conversion circuit 2001 according to the present embodiment is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It can be composed of six freewheeling diodes connected in antiparallel. The main conversion circuit 2001 is composed of a semiconductor device 2002 corresponding to any one of the above-described first to fifth embodiments incorporating each switching element, each freewheeling diode, and the like. The six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of each upper and lower arm, that is, the three output terminals of the main conversion circuit 2001 are connected to the load 3000.

Further, the main conversion circuit 2001 includes a drive circuit (not shown) for driving each switching element. The drive circuit may be built in the semiconductor device 2002, or may be configured to include a drive circuit separately from the semiconductor device 2002. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 2001 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 2001. Specifically, according to the control signal from the control circuit 2003 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element. When the switching element is kept in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept in the off state, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).

The control circuit 2003 controls the switching element of the main conversion circuit 2001 so that the desired power is supplied to the load 3000. Specifically, the time (on time) at which each switching element of the main conversion circuit 2001 should be in the on state is calculated based on the power to be supplied to the load 3000. For example, the main conversion circuit 2001 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Further, a control command is given to the drive circuit provided in the main conversion circuit 2001 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Control signal) is output. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.

In the power conversion device according to the fourth embodiment configured as described above, since the semiconductor devices according to the first to third embodiments are applied as the semiconductor device 2002 of the main conversion circuit 2001, the reliability is improved. be able to.

In the present embodiment, an example of applying the present invention to a two-level three-phase inverter has been described, but the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, the two-level power conversion device is used, but a three-level, multi-level power conversion device may be used. It may be applied. Further, when supplying electric power to a DC load or the like, the present invention can be applied to a DC / DC converter, an AC / DC converter, or the like.

Further, the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor. For example, a power supply device for a discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system. It can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

It should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is indicated by the scope of claims, not the scope of the above-described embodiments, and includes all modifications within the meaning and scope equivalent to the scope of claims. In addition, the invention may be formed by appropriately combining a plurality of components disclosed in the above-described embodiment.

1 Heat conductive member, 1a metal foil, 1b insulating sheet, 2 lead frame, 3 solder, 4 semiconductor element, 5 bonding wire, 6 circuit board, 7 sealing resin, 8,81 through hole, 9,91 stepped portion, 10 Gap, 11 machined holes, 12 lower molds, 13 support pins, 14 upper molds, 15 holding pins, 16 lead frame holding pins, 17 lead frame holding pin holes, 18 pin marks, 19 connecting members, 100, 101 , 102, 200, 300, 2002 Semiconductor device, 1000 power supply, 2000 power conversion device, 2001 main conversion circuit, 2003 control circuit, 3000 load.

Claims (15)

A heat conductive member with a first hole and
A metal member provided on the heat conductive member, on which a semiconductor element is mounted, and having a second hole at a corresponding position above the first hole.
A circuit board that is located above the metal member and has a third hole at a corresponding position above the second hole.
A sealing member that includes the circuit board, fills the first hole, the second hole, and the third hole, and integrally seals the heat conductive member, the metal member, and the circuit board. Semiconductor device equipped with. The semiconductor device according to claim 1, wherein the first hole, the second hole, and the third hole are formed at least three or more places. The semiconductor device according to claim 1 or 2, wherein the third hole penetrates the circuit board and has a truncated cone shape in which the diameter decreases as the distance from the surface side facing the metal member increases. The semiconductor device according to claim 1 or 2, wherein the third hole penetrates the circuit board and has a two-stage shape having a large diameter on the surface side facing the metal member. The semiconductor device according to claim 1 or 2, wherein the third hole has a depth shallower than the thickness of the circuit board. The semiconductor device according to any one of claims 1 to 5, wherein the diameter of the first hole, the diameter of the second hole, and the diameter of the third hole are 0.5 mm or more. The semiconductor device according to any one of claims 1 to 6, wherein the distance from the outer peripheral end of the first hole to the outer peripheral end of the second hole is 0.1 mm or more. The semiconductor device according to any one of claims 1 to 7, wherein the metal member has a stepped portion, and the stepped portion has a distance of 0.1 mm or more to the heat conductive member. The semiconductor device according to claim 8, wherein the metal member is a step portion formed around the second hole. The semiconductor device according to claim 7 or 8, wherein the circuit board is provided with a fourth hole inside the third hole and above the metal member on which the semiconductor element is not mounted. The semiconductor device according to claim 10, wherein the fourth hole is filled with the sealing member. The semiconductor device according to claim 10, wherein the sealing member has a recess formed at a corresponding position above the fourth hole. A semiconductor element is mounted on a heat conductive member having a first hole, a metal member having a second hole is arranged at a corresponding position above the first hole, and the second hole is placed above the metal member. A base material preparation step of arranging a circuit board having a third hole at a corresponding position above the
The circuit board is provided with a support pin that arranges the heat conductive member, the metal member, and the circuit board in the lower mold, and moves up and down using the first hole, the second hole, and the third hole. And the base material placement process in the lower mold to support
The upper mold installation process of sandwiching the metal terminal portion of the metal member between the lower mold and the upper mold,
A sealing member filling step of including the circuit board and integrally sealing the heat conductive member, the metal member, and the circuit board with a sealing member.
A support pin pulling step of pulling out the support pin from the lower mold,
An in-mold repressurization step of filling the first hole, the second hole, and the third hole with the sealing member,
The sealing member curing step of curing the sealing member and
A method for manufacturing a semiconductor device provided with. The method for manufacturing a semiconductor device according to claim 13, wherein the upper mold installation step uses the circuit board provided with the fourth hole, and presses the metal member with a pressing pin using the fourth hole. A main conversion circuit having the semiconductor device according to any one of claims 1 to 12 and converting and outputting input power.
A control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit,
Power converter equipped with.

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