CN113841235B - Semiconductor module, method for manufacturing semiconductor module, and power conversion device - Google Patents
Semiconductor module, method for manufacturing semiconductor module, and power conversion device Download PDFInfo
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- CN113841235B CN113841235B CN201980096496.8A CN201980096496A CN113841235B CN 113841235 B CN113841235 B CN 113841235B CN 201980096496 A CN201980096496 A CN 201980096496A CN 113841235 B CN113841235 B CN 113841235B
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- 230000001105 regulatory effect Effects 0.000 claims description 12
- 229920001971 elastomer Polymers 0.000 claims description 6
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- 238000010438 heat treatment Methods 0.000 claims description 5
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- 239000000853 adhesive Substances 0.000 description 16
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- 229910000679 solder Inorganic materials 0.000 description 11
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- 229910052582 BN Inorganic materials 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
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- 239000010949 copper Substances 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
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- 229910010272 inorganic material Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A highly reliable semiconductor module and a power conversion device using the semiconductor module are obtained. The semiconductor module (100) is provided with a heat dissipation member (7), a semiconductor package (200), a connection member (8), and a restriction member (9). The connection member (8) connects the heat dissipation member (7) and the semiconductor package (200). The connection member (8) contains a resin component. The restricting member (9) is disposed on the main surface (7 a) so as to surround the connecting member (8). In a direction perpendicular to the main surface (7 a), the position of the top portion (9 a) of the restricting member (9) is farther from the main surface (7 a) than the position of the outer peripheral portion of the surface of the connecting member (8) on the semiconductor package (200) side.
Description
Technical Field
The present invention relates to a semiconductor module, a method for manufacturing the semiconductor module, and a power conversion device.
Background
Conventionally, a semiconductor module in which a semiconductor package including a semiconductor element is connected to a heat dissipation member such as a heat sink by a connection member such as a resin insulating layer, and a power conversion device using the semiconductor module have been known (for example, refer to japanese patent application laid-open No. 2013-110181). In japanese patent application laid-open No. 2013-110181, in order to control the thickness of the connection member, a resin thickness limiting member surrounding the outer periphery of the resin insulation layer is arranged between the semiconductor package and the heat dissipation member. With such a structure, in japanese patent application laid-open No. 2013-110181, electrical insulation and thermal conductivity in the resin insulation layer can be ensured stably.
Patent document 1: japanese patent laid-open No. 2013-110181
Disclosure of Invention
Problems to be solved by the invention
In the above-described conventional semiconductor module, the positions of the upper and lower surfaces of the resin thickness regulating member are the same as the positions of the upper and lower surfaces of the resin insulation layer. That is, the first connection interface of the upper surface of the resin thickness restriction member and the lower surface of the semiconductor package and the connection interface of the resin insulation layer and the semiconductor package are located on the same plane. In addition, the second connection interface of the lower surface of the resin thickness restriction member and the upper surface of the heat dissipation member and the connection interface of the resin insulation layer and the heat dissipation member are located on the same plane. Here, when the semiconductor package is bonded to the heat dissipation member by the resin insulating layer, the resin insulating layer is heated while being pressurized. At this time, the resin component of the resin insulation layer may flow out to the outer peripheral side of the semiconductor package via the first connection interface or the second connection interface in the resin thickness regulating member.
In this case, voids and cracks may occur in the resin insulating layer due to a large movement of the resin component in the resin insulating layer as a connecting member. The occurrence of voids and cracks in the connection member causes a decrease in the insulation and heat dissipation properties of the semiconductor module, and as a result, a decrease in the reliability of the semiconductor module.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor module having high reliability and a power conversion device using the semiconductor module.
Solution for solving the problem
The semiconductor module according to the present disclosure includes a heat dissipation member, a semiconductor package, a connection member, and a restriction member. The heat dissipation member has a main surface. The semiconductor package is disposed on the main surface. The semiconductor package includes a semiconductor element. The connection member is located between the heat dissipation member and the semiconductor package. The connection member connects the heat dissipation member with the semiconductor package. The connecting member includes a resin component. The restricting member is disposed on the main surface so as to surround the connecting member. In the direction perpendicular to the main surface, the position of the top portion of the restriction member is farther from the main surface than the position of the outer peripheral portion of the surface of the connection member on the semiconductor package side.
The power conversion device according to the present disclosure includes a main conversion circuit and a control circuit. The main conversion circuit includes the semiconductor module, and converts the input power to output the converted power. The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
The method for manufacturing a semiconductor module according to the present disclosure includes a step of preparing a heat dissipation member, a step of disposing a connection member, a step of disposing a restriction member, a step of disposing a semiconductor package, and a step of connecting the heat dissipation member to the semiconductor package. The heat dissipation member has a main surface. In the step of disposing the connection member, the connection member is disposed on the main surface. The connecting member includes a resin component. In the step of disposing the restricting member, the restricting member is disposed on the main surface so as to surround the connecting member. In the step of disposing the semiconductor package, the semiconductor package including the semiconductor element is disposed on the connection member. In the step of connecting, the semiconductor package is pushed toward the connecting member and the connecting member is heated. As a result, the heat dissipation member and the semiconductor package are connected by the connection member.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the above, since the position of the top portion of the restricting member disposed so as to surround the connecting member is farther from the main surface than the position of the outer peripheral portion of the surface on the semiconductor package side in the connecting member, it is possible to suppress occurrence of a problem such as leakage of a part of the connecting member to the outside of the semiconductor package when the semiconductor package is connected to the heat dissipating member by the connecting member. As a result, a highly reliable semiconductor module and a power conversion device using the semiconductor module are obtained.
Drawings
Fig. 1 is a schematic cross-sectional view showing a semiconductor module according to embodiment 1.
Fig. 2 is a schematic cross-sectional view showing a semiconductor package constituting the semiconductor module shown in fig. 1.
Fig. 3 is a schematic plan view of the semiconductor module shown in fig. 1.
Fig. 4 is a schematic cross-sectional view showing a modification of the semiconductor module shown in fig. 1.
Fig. 5 is a flowchart for explaining a method of manufacturing the semiconductor module shown in fig. 1.
Fig. 6 is a flowchart for explaining the arrangement process of the method for manufacturing the semiconductor module shown in fig. 5.
Fig. 7 is a flowchart illustrating an example of a process for disposing the restricting member in the method for manufacturing the semiconductor module shown in fig. 6.
Fig. 8 is a schematic cross-sectional view showing a semiconductor module as a reference example.
Fig. 9 is a schematic cross-sectional view showing a semiconductor module as a reference example.
Fig. 10 is a schematic cross-sectional view showing a semiconductor module according to embodiment 2.
Fig. 11 is an enlarged sectional view showing a region XI of fig. 10.
Fig. 12 is a schematic cross-sectional view showing a semiconductor module according to embodiment 3.
Fig. 13 is a schematic cross-sectional view showing a semiconductor module according to embodiment 4.
Fig. 14 is a schematic cross-sectional view showing a semiconductor module according to embodiment 5.
Fig. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to embodiment 6 is applied.
(Description of the reference numerals)
1: A semiconductor element; 2: solder; 3: a heat sink; 4: sealing resin; 5: a lead frame; 6: a bonding wire; 7: a heat radiation member; 7a: a major surface; 8: a connecting member; 9: a restriction member; 9a: a top; 21: a groove portion; 22: a pressing part; 23: a second region; 24: a concave portion; 25: a first region; 31: an outflow part; 41: an adhesive member; 100. 402: a semiconductor module; 200: a semiconductor package; 300: a power supply; 400: a power conversion device; 401: a main conversion circuit; 403: a control circuit; 500: and (3) loading.
Detailed Description
Hereinafter, embodiments of the present invention will be described. The same reference numerals are given to the same structures, and the description thereof will not be repeated.
Embodiment 1.
< Structure of semiconductor Module >
Fig. 1 is a schematic cross-sectional view showing a semiconductor module 100 according to embodiment 1. Fig. 2 is a schematic cross-sectional view showing a semiconductor package 200 constituting the semiconductor module 100 shown in fig. 1. Fig. 3 is a schematic plan view of the semiconductor module shown in fig. 1.
The semiconductor module 100 shown in fig. 1 to 3 is, for example, a power semiconductor module, and mainly includes a heat dissipation member 7, a semiconductor package 200, a connection member 8, and a restriction member 9. The semiconductor package 200 is connected to the heat dissipation member 7 through the connection member 8. The restricting member 9 is arranged to surround the outer peripheral portion of the connecting member 8. The restricting member 9 is, for example, a resin outflow preventing member. In the direction perpendicular to the main surface 7a, the position of the top 9a of the restriction member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connection member 8 on the semiconductor package 200 side.
The heat radiation member 7 as a heat radiation fin has a main surface 7a. The heat dissipation member 7 includes, for example, a metal such as aluminum or copper. In all the drawings in the embodiment of the present specification, the heat dissipation member 7 is in a flat block shape, but the portion other than the main surface 7a of the bonded semiconductor package 200 may be processed into a fin shape or a concave-convex shape to increase the heat dissipation area.
The semiconductor package 200 is disposed on the main surface 7a of the heat dissipation member 7. The semiconductor package 200 mainly includes a semiconductor element 1, a heat spreader 3, a lead frame 5, a bonding wire 6, and a sealing resin 4. The semiconductor element 1 is connected to the upper surface of the heat sink 3 via solder 2. The semiconductor element 1 is connected to the lead frame 5 by a bonding wire 6. The sealing resin 4 is formed so that the heat spreader 3, the semiconductor element 1, a part of the lead frame 5, and the bonding wire 6 are disposed therein. The sealing resin 4 seals the semiconductor element 1, a part of the lead frame 5, a part of the heat spreader 3, and the bonding wire 6.
The semiconductor element 1 is a power semiconductor element, and as the semiconductor element 1, a semiconductor element for power control such as a MOSFET (Metal Oxide Semiconductor FIELD EFFECT Transistor: metal oxide semiconductor field effect Transistor), an IGBT (Insulated Gate Bipolar Transistor: insulated gate bipolar Transistor), a flywheel diode, or the like is used. The heat sink 3 is made of a metal having excellent heat dissipation properties such as copper or aluminum. The solder 2 is used as a connection material for connecting the heat spreader 3 and the semiconductor element 1 as described above, but the connection material is not limited thereto. As the connection material, sintered silver or conductive adhesive may be used instead of the solder 2. The semiconductor element 1 and the heat sink 3 may be bonded using a liquid phase diffusion bonding technique.
The lead frame 5 is patterned as an external terminal for input and output of current and voltage. The lead frame 5 is generally made of a metal such as copper, similarly to the heat spreader 3. A part of the lead frame 5 is bonded to the heat spreader 3 by solder. The other part of the lead frame 5 is electrically connected to the semiconductor element 1 by a bonding wire 6. The bonding wire 6 is, for example, a wire made of an aluminum alloy or a copper alloy having a wire diameter of 0.1mm or more and 0.5mm or less.
The material of the solder as the connecting material for bonding the lead frame 5 and the heat sink 3 may be the same as the material of the solder 2 for connecting the semiconductor element 1 and the heat sink 3. The connection material for bonding the lead frame 5 and the heat sink 3 may be sintered silver or conductive adhesive. The leadframe 5 and the heat spreader 3 may also be bonded using liquid phase diffusion bonding techniques.
In the semiconductor package 200 described above, the semiconductor element 1 and the lead frame 5 are electrically connected by the bonding wire 6, but other structures may be used. For example, the bonding tape or the lead frame 5 may be extended onto the semiconductor element 1. The bonding tape or lead frame 5 may be connected to the semiconductor element 1 by solder, sintered silver, or conductive adhesive. The bonding tape or lead frame 5 may also be directly bonded to the semiconductor element 1 using liquid phase diffusion bonding techniques. The lead frame 5 and the heat sink 3 may be integrally formed by etching or die-forming a metal plate. That is, the lead frame 5 and the heat sink 3 may be an integrated member.
The sealing resin 4 is disposed so as to cover the above-described respective members. That is, the entire surfaces of the semiconductor element 1, the solder 2, the heat spreader 3, and the bonding wire 6 are covered with the sealing resin 4. However, with respect to the lead frame 5 extending outward from above the heat sink 3, only a part thereof, that is, the inner part of the lead frame 5 is covered with the sealing resin 4. Another portion of the lead frame 5, particularly a portion outside the lead frame 5, is not covered with the sealing resin 4. Thus, the portion of the outside of the lead frame 5 not covered with the sealing resin 4 can be electrically connected to the outside of the semiconductor module 100. With respect to the heat sink 3, the bottom surface of the heat sink 3 is also exposed without being covered with the sealing resin 4. The bottom surface of the heat sink 3 is connected to the heat dissipation member 7 via a connection member 8. With this structure, heat generated from the semiconductor element 1 is released to the outside of the semiconductor package 200 via the solder 2 and the heat sink 3.
As the sealing resin 4, any resin can be used, and for example, an epoxy resin subjected to transfer molding can be used. By covering the periphery of the semiconductor element 1 with the sealing resin 4, the semiconductor element 1 can be prevented from being affected by external environments such as dust, humidity, and the like. As a result, the reliability of the semiconductor package 200 can be improved.
The connection member 8 is located between the heat dissipation member 7 and the semiconductor package 200. The connection member 8 connects the heat dissipation member 7 with the semiconductor package 200. The connection member 8 is, for example, a resin insulation layer. The connection member 8 is preferably a resin layer excellent in thermal conductivity and electrical insulation. As a member satisfying such a demand, a thermally conductive sheet obtained by dispersing an inorganic filler in a cured product of a thermosetting resin is widely used. That is, the above-described thermally conductive sheet can be used as the connection member 8. Examples of the inorganic filler used for the heat conductive sheet include alumina, boron nitride, silica, and aluminum nitride. In particular, in the case where high thermal conductivity and insulation are required, boron nitride is often used as the above-mentioned inorganic filler. Boron nitride is excellent in thermal conductivity and electrical insulation, and also excellent in chemical stability. And, boron nitride is non-toxic and also relatively inexpensive.
As the connection member 8, a member obtained by impregnating a thermosetting resin into a layer obtained by compression-sintering an inorganic material such as boron nitride may be used. As the connection member 8, a layer of thermosetting insulating resin to which no grease or inorganic filler is added, although the heat radiation performance is lower than that of the heat conductive sheet, may be used.
The semiconductor package 200 configured as described above transmits heat generated from the semiconductor element 1 during operation to the heat radiation member 7 via the solder 2, the heat sink 3, and the connection member 8. The heat radiation member 7 is made of a metal having excellent heat radiation properties, such as copper or aluminum, like the heat radiator 3.
The restricting member 9 is disposed on the main surface 7a so as to surround the connecting member 8. The regulating member 9 is fixed in a state where a lower portion of the regulating member 9 is fitted into the groove portion 21 formed in the main surface 7 a. The groove 21 is formed so as to surround the semiconductor package 200 on the main surface 7a of the heat dissipation member 7 in a plan view. The restricting member 9 may be a metal frame or a resin frame such as PPS (polyphenylene sulfide) resin or PBT (polybutylene terephthalate) resin. The restricting member 9 may be a frame body including an elastic body such as silicone rubber. When a housing including an elastic body is used as the regulating member 9 in this way, the regulating member 9 can be reliably fitted into the groove portion 21 even if there is a dimensional deviation of the groove portion 21. The method of fixing the restriction member 9 to the groove portion 21 may be merely fitting, but other methods may be used. For example, in order to improve the fixing strength of the restricting member 9 to the groove portion 21, the restricting member 9 is bonded to the groove portion 21 via an adhesive member 41 such as an adhesive as shown in fig. 4. Fig. 4 is a schematic cross-sectional view showing a modification of the semiconductor module shown in fig. 1. The semiconductor module 100 shown in fig. 4 basically has the same structure as the semiconductor module 100 shown in fig. 1 to 3, but differs from the semiconductor module 100 shown in fig. 1 to 3 in that the restricting member 9 is fixed to the groove portion 21 by the adhesive member 41. In the semiconductor module 100 shown in fig. 4, the adhesive member 41 adheres at least a portion of the bottom surface and the side surface of the groove portion 21 to the bottom surface of the restriction member 9.
As a method of forming the restricting member 9 fixed to the heat radiation member 7, the restricting member 9 formed in advance into a frame shape as described above may be provided and fixed to the main surface 7a of the heat radiation member 7. In order to form the restricting member 9, a liquid material that is a liquid material to be the restricting member 9 may be disposed in the groove 21 of the heat radiation member 7, and then the liquid material may be solidified. As a method of disposing the liquid material in the groove 21, any method can be used, and for example, a coating method or a printing method can be used. Further, the relative permittivity epsilon of the regulating member 9 may be made larger than the relative permittivity epsilon of the connecting member 8. In this case, partial discharge at the end of the heat sink 3 can be suppressed during the operation of the semiconductor module 100. As a result, the insulation of the semiconductor module 100 can be improved.
< Method for manufacturing semiconductor Module >
Fig. 5 is a flowchart for explaining a method of manufacturing the semiconductor module shown in fig. 1. Fig. 6 is a flowchart for explaining the arrangement process of the method for manufacturing the semiconductor module shown in fig. 5. Fig. 7 is a flowchart illustrating an example of a process for disposing the restricting member in the method for manufacturing the semiconductor module shown in fig. 6. Fig. 8 and 9 are schematic sectional views showing a semiconductor module as a reference example.
Referring to fig. 5 and 6, in the method for manufacturing the semiconductor module 100, a preparation process is first performed (S10). In this step (S10), the heat dissipation member 7, the connection member 8, the restriction member 9, and the semiconductor package 200 are prepared. The main surface 7a of the heat radiation member 7 is formed with a groove 21 as shown in fig. 1.
Next, a placement process is performed (S20). In this step (S20), a laminate is obtained in which the connection member 8 and the semiconductor package 200 are laminated on the main surface 7a of the heat dissipation member 7. At this time, a restricting member 9 is disposed around the connecting member 8.
Specifically, in this step (S20), a step (S21) of disposing the connecting member is performed as shown in fig. 6. In the step (S21) which is a resin insulating layer forming step, the connection member 8 including a resin component is disposed on the main surface 7a of the heat dissipation member 7. Next, a step of disposing the restricting member is performed (S22). In this step (S22), the restricting member 9 is disposed in the groove portion 21 in the main surface 7a of the heat radiation member 7. The restricting member 9 is configured to surround the circumference of the connecting member 8.
In this step (S22), the process shown in fig. 7 may be used. Specifically, a step (S221) of disposing a liquid in the region where the restriction member 9 is to be disposed is performed. In this step (S221), for example, a liquid material to be the regulating member 9 is disposed inside the groove portion 7a of the main surface 7a of the heat radiation member 7. Next, a step of curing is performed (S222). In this step (S222), the liquid material is cured by a treatment such as heating or exposure. By doing so, the restricting member 9 is disposed on the main surface 7a of the heat dissipation member 7. The step (S221) and the step (S222) may be repeated a plurality of times, and the restricting member 9 may be formed by stacking a plurality of layers obtained by solidifying the liquid material.
Next, a step of disposing the semiconductor package is performed (S23). In this step (S23), the semiconductor package 200 is mounted on the connection member 8.
Next, a connection step is performed as shown in fig. 5 (S30). In this step (S30), the connection member 8 is heated from the semiconductor package 200 while being pressurized in a direction toward the heat radiation member 7, for example, using a press or the like capable of performing pressurization heating. As the heating conditions, for example, temperature conditions of 100 ℃ or more and 250 ℃ or less can be used. The pressure as the pressurizing condition may be, for example, 0.5MPa or more and 20MPa or less.
Here, when the pressure in the above step (S30) is high, in the structure in which the restricting member 9 is not disposed, the resin (for example, thermosetting resin) forming a part of the connecting member 8 may overflow out of the adhesive surface of the semiconductor package 200 as shown in fig. 8, and the outflow portion 31 may be formed. If such an outflow portion 31 becomes large, the distance H between the semiconductor package 200 and the heat dissipation member 7 becomes smaller than the design value. As a result, the insulation characteristics between the heat sink 3 and the heat dissipation member 7 deteriorate. In addition, when the pressure is large, the movement of the resin in the connection member 8 becomes large. Therefore, voids (bubbles) and cracks are frequently generated in the connecting member 8. In this case as well, the insulation characteristics between the heat sink 3 and the heat dissipation member 7 deteriorate. Further, voids and cracks in the connecting member 8 may cause deterioration of heat radiation characteristics.
In the structure in which the restricting member 9 is not disposed, when the pressure of the semiconductor package 200 in the step (S30) is small, the adhesive strength between the connecting member 8 and the semiconductor package 200 may not be sufficiently obtained. In this case, in a reliability test such as temperature cycle of the semiconductor module 100, peeling occurs at the adhesive interface between the connection member 8 and the semiconductor package 200 as shown in fig. 9. Such peeling also causes deterioration of insulation properties and heat dissipation properties.
Therefore, in the method for manufacturing a semiconductor module according to the present embodiment described above, the step (S22) of disposing the restricting member 9 as the resin outflow preventing means is performed such that the position of the upper and lower surfaces of the restricting member 9 is not the same as the height of the upper and lower surfaces of the connecting member 8. From a different point of view, the side face of the restricting member 9 faces the side end face of the connecting member 8, and the thickness of the restricting member 9 is thicker than the thickness of the connecting member 8. As a result, the resin outflow path from the connection member 8 can be prevented from being straight like the structure shown in fig. 8 and 9. As a result, in the step (S30), the pressure required for sufficiently improving the strength (adhesive strength) of the joint portion between the semiconductor package 200 and the heat dissipation member 7 by the connection member 8 can be applied, and the occurrence of the resin outflow portion 31 as shown in fig. 8 can be prevented.
That is, when the connection member 8 is heated while applying pressure to the semiconductor package 200 in the step (S30), the resin component in the connection member 8 can be prevented from flowing out of the adhesive surface by the restriction member 9. In particular, in the case where the connection member 8 is configured such that a layer obtained by compression-sintering an inorganic material such as boron nitride is impregnated with a thermosetting resin, the occurrence of the outflow portion 31 shown in fig. 8 can be suppressed, and a sufficient pressure can be applied to the semiconductor package 200. As a result, the adhesive strength between the semiconductor package 200 and the heat dissipation member 7 can be kept sufficiently high. Thus, the semiconductor module 100 having high reliability and excellent insulating properties and heat dissipation properties can be obtained.
< Effect >
The semiconductor module 100 according to the present disclosure includes a heat dissipation member 7, a semiconductor package 200, a connection member 8, and a restriction member 9. The heat dissipation member 7 has a main surface 7a. The semiconductor package 200 is disposed on the main surface 7a. The semiconductor package 200 includes the semiconductor element 1. The connection member 8 is located between the heat dissipation member 7 and the semiconductor package 200. The connection member 8 connects the heat dissipation member 7 with the semiconductor package 200. The connection member 8 contains a resin component. The restricting member 9 is disposed on the main surface 7a so as to surround the connecting member 8. In the direction perpendicular to the main surface 7a, the position of the top 9a of the restriction member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface on the semiconductor package 200 side in the connection member 8.
In this way, the top 9a of the restricting member 9 surrounding the outer periphery of the connecting member 8 is located at a higher position than the surface that is the upper surface of the connecting member 8, so that the resin component can be prevented from flowing out from the connecting member 8 to the outside by the restricting member 9. Therefore, even if the pressure is applied to the connection member 8 by, for example, pressing the semiconductor package 200 against the heat radiation member 7 in order to connect the heat radiation member 7 and the semiconductor package 200 with the connection member 8, occurrence of a defect such as the resin component of the connection member 8 flowing out to the outside of the outer peripheral end portion of the semiconductor package 200 can be suppressed. Therefore, when the semiconductor package 200 is connected to the heat dissipation member 7, a sufficient pressure can be applied to the connection member 8. As a result, it is possible to suppress the occurrence of problems such as insufficient adhesive strength or poor connection between the semiconductor package 200 and the heat dissipation member 7, or occurrence of voids due to the flow of the resin component in the connection member 8. Therefore, deterioration of the insulating property and the heat dissipation property in the semiconductor module due to the above-described problem can be suppressed, and the reliability of the semiconductor module can be improved.
In the semiconductor module 100 described above, the groove portion 21 is formed in the region below the restriction member 9 at the main surface 7 a. A part of the restricting member 9 is located inside the groove portion 21. In this case, by disposing a part of the restricting member 9 in the groove portion 21, the restricting member 9 can be easily positioned.
In the above-described semiconductor module 100, the material constituting the restriction member 9 includes an elastomer. In this case, the restricting member 9 can be brought into close contact with the heat dissipation member 7 or the semiconductor package 200 by applying pressure to the connection portion between the restricting member 9 and the heat dissipation member 7 or the contact portion between the restricting member 9 and the semiconductor package 200. As a result, it is possible to suppress occurrence of a gap in the connection interface between the restriction member 9 and the heat dissipation member 7 or the contact interface between the restriction member 9 and the semiconductor package 200, which may be a path through which the resin component of the connection member 8 flows out to the outside.
In the above-described semiconductor module 100, the relative dielectric constant of the restriction member 9 is larger than that of the connection member 8. In this case, partial discharge generated from the portion of the semiconductor package 200 in contact with the connection member 8 can be suppressed. As a result, the insulating property of the semiconductor module 100 can be improved.
The method for manufacturing the semiconductor module 100 according to the present disclosure includes: a step (S10) of preparing a heat radiation member 7; a step (S21) of disposing the connecting member 8; a step (S22) of disposing the restricting member 9; a step (S23) of disposing the semiconductor package 200; and a step (S30) of connecting the heat dissipation member 7 to the semiconductor package 200. The heat dissipation member 7 has a main surface 7a. In the step of disposing the connection member 8 (S21), the connection member 8 is disposed on the main surface 7a. The connection member 8 contains a resin component. In the step (S22) of disposing the restricting member 9, the restricting member 9 is disposed on the main surface 7a so as to surround the connecting member 8. In the step of disposing the semiconductor package 200 (S23), the semiconductor package 200 including the semiconductor element 1 is disposed on the connection member 8. In the step of connecting (S30), the connection member 8 is heated while the semiconductor package 200 is pushed toward the connection member 8. As a result, the heat dissipation member 7 and the semiconductor package 200 are connected by the connection member 8.
By disposing the restricting member 9 in this manner, the resin component can be prevented from flowing out from the pressurized connecting member 8 in the connecting step (S30). Therefore, in the step of connecting (S30), a sufficient pressure can be applied to the connecting member 8. Accordingly, in the step of connecting (S30), it is possible to suppress occurrence of problems such as insufficient adhesive strength or poor connection between the semiconductor package 200 and the heat dissipation member 7, or occurrence of voids due to the flow of the resin component in the connection member 8. As a result, the semiconductor module 100 with high reliability can be obtained.
In the above-described method for manufacturing the semiconductor module 100, the step (S22) of disposing the restriction member 9 includes: a step (S221) of disposing a liquid to be the regulating member 9 on the main surface 7 a; and a step (S222) of forming the restriction member 9 by solidifying the liquid.
In this case, the restricting member 9 is formed in a state of being abutted against the main surface 7a of the heat radiation member 7. Accordingly, the occurrence of a gap in the contact interface between the heat radiation member 7 and the restricting member 9 can be prevented, and thus the resin component of the connecting member 8 can be prevented from flowing out to the outside through the gap.
Embodiment 2.
< Structure of semiconductor Module >
Fig. 10 is a schematic cross-sectional view showing a semiconductor module according to embodiment 2. Fig. 11 is an enlarged sectional view showing a region XI of fig. 10. The semiconductor module 100 shown in fig. 10 and 11 basically has the same structure as the semiconductor module 100 shown in fig. 1 to 3, but the structure of the semiconductor package 200 is different from the semiconductor module 100 shown in fig. 1 to 3. That is, in the semiconductor module 100 shown in fig. 10 and 11, the pressing portion 22 that contacts the top 9a of the restricting member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200. The pressing portion 22 is a part of the sealing resin 4. The pressing portion 22 is a flange-like portion formed on the outer peripheral portion of the sealing resin 4.
Since the pressing portion 22 is formed in the semiconductor package 200 in this way, in the connection step (S30) of fig. 5, when the semiconductor package 200 is pressed against the heat dissipation member 7 via the connection member 8, the pressing portion 22 presses the top 9a of the restriction member 9. As a result, the adhesion between the restricting member 9 and the heat dissipation member 7 and the semiconductor package 200 can be further improved. Therefore, the gap between the restriction member 9 and the heat dissipation member 7, which are the outflow paths of the resin components from the connection member 8, or the gap between the restriction member 9 and the semiconductor package 200 can be reduced. Thus, the resin can be prevented from flowing out of the connection member 8 more stably than the semiconductor module 100 according to embodiment 1.
In particular, when the restricting member 9 includes an elastic body such as silicone rubber, in the step (S30) shown in fig. 5, the top 9a of the restricting member 9 can be pressed by the pressing portion 22, and therefore the restricting member 9 is pressed into the groove 21 while being compressed and deformed. As a result, the gap that becomes the resin outflow path can be completely filled.
< Effect >
In the above-described semiconductor module 100, the semiconductor package 200 includes the pressing portion 22 that contacts the top portion 9a of the restriction member 9. In this case, by pressing the top 9a of the restriction member 9 by the pressing portion 22 of the semiconductor package 200, the occurrence of gaps in the contact interface of the restriction member 9 and the semiconductor package 200 and the contact interface of the restriction member 9 and the heat dissipation member 7 can be suppressed. As a result, the resin component of the connection member 8 can be prevented from flowing out to the outside through the gap of the contact interface.
In the above-described semiconductor module 100, it is preferable that the material constituting the restriction member 9 include an elastomer. In this case, the pressing portion 22 can be used to apply pressure to the connection portion between the restricting member 9 and the heat dissipation member 7 or to the contact portion between the restricting member 9 and the semiconductor package 200. As a result, the restriction member 9 can be brought into close contact with the heat dissipation member 7 or the semiconductor package 200. Therefore, the occurrence of a gap in the connection interface between the restricting member 9 and the heat dissipation member 7 or in the contact interface between the restricting member 9 and the semiconductor package 200, which may be a path through which the resin component of the connecting member 8 flows out, can be suppressed, and the resin component can be suppressed from flowing out from the connecting member 8 to the outside.
Embodiment 3.
< Structure of semiconductor Module >
Fig. 12 is a schematic cross-sectional view showing a semiconductor module according to embodiment 3. The semiconductor module 100 shown in fig. 12 basically has the same structure as the semiconductor module 100 shown in fig. 10, but the structure of the heat dissipation member 7 is different from the semiconductor module 100 shown in fig. 10. That is, in the semiconductor module 100 shown in fig. 12, the main surface 7a of the heat dissipation member 7 includes the first region 25 as a convex portion below the connection member 8 and the second region 23 arranged so as to surround the first region 25 with the surface located on the lower side than the first region 25. The restriction member 9 is configured to surround the outer periphery of the first region 25. The restricting member 9 is in contact with the step between the first region 25 and the second region 23.
In such a configuration, the step of providing the restriction member 9 on the main surface 7a of the heat radiation member 7 can be easily performed. In particular, it is advantageous if the restriction member 9 comprises an elastomer such as silicone rubber. That is, when the semiconductor package 200 is large and the size of the restriction member 9 is also large, the workability of the step of providing the restriction member 9 to the groove portion 21 is deteriorated as in the semiconductor module 100 according to embodiment 2. This is because the regulating member 9 including an elastic body is easily deformed, and it is difficult to dispose the regulating member 9 in the groove portion 21 in a short time. On the other hand, with the configuration of the heat radiation member 7 as described above, the restriction member 9 can be disposed along the stepped portion which is the outer peripheral portion of the first region 25 as the convex portion, and therefore, the workability of the step (S22) of disposing the restriction member 9 can be improved.
< Effect >
In the semiconductor module 100, the first region 25 located below the connection member 8 on the main surface 7a is a convex portion protruding toward the semiconductor package 200 side than the second region 23 outside the first region 25. In this case, by disposing the restricting member 9 so as to contact the outer peripheral side surface of the first region 25 as the protruding portion, positioning of the restricting member 9 can be easily performed.
In the above-described semiconductor module 100, the semiconductor package 200 includes the pressing portion 22 that contacts the top portion 9a of the restriction member 9. In this case, the same effects as those of the semiconductor module 100 according to embodiment 2 described above can be obtained. That is, by pressing the top 9a of the restriction member 9 by the pressing portion 22 of the semiconductor package 200, the occurrence of the gap in the contact interface of the restriction member 9 and the semiconductor package 200 and the contact interface of the restriction member 9 and the heat dissipation member 7 can be suppressed. As a result, the resin component of the connection member 8 can be prevented from flowing out to the outside through the gap of the contact interface. In the above-described semiconductor module 100, it is preferable that the material constituting the restriction member 9 include an elastomer.
Embodiment 4.
< Structure of semiconductor Module >
Fig. 13 is a schematic cross-sectional view showing a semiconductor module according to embodiment 4. The semiconductor module 100 shown in fig. 13 basically has the same structure as the semiconductor module 100 shown in fig. 1 to 3, but the structure of the heat dissipation member 7 is different from the semiconductor module 100 shown in fig. 1 to 3. That is, in the semiconductor module 100 shown in fig. 13, the recess 24 having a depth equal to or greater than the thickness of the connection member 8 and equal to or less than the thickness of the restriction member 9 is formed in the main surface 7a of the heat dissipation member 7. The restricting member 9 is disposed on the outer periphery of the recess 24. The connection member 8 is disposed inside the recess 24 and on the inner peripheral side of the restriction member 9.
In the semiconductor module 100 shown in fig. 13, the lower surface of the restriction member 9, which is in contact with the heat dissipation member 7, is located on an extension line of the same height as the lower surface (lower bonding interface) of the connection member 8. However, even if the resin component of the connection member 8 oozes from the lower surface side of the restriction member 9 and flows out to the outside of the restriction member 9, the side wall of the recess 24 is present on the outer peripheral side of the restriction member 9. Therefore, the outflow of the resin component from the connection member 8 can be suppressed to the minimum. In the step (S22) shown in fig. 6, similarly to the semiconductor module 100 shown in fig. 12, when the restricting member 9 is disposed on the main surface 7a of the heat dissipation member 7, the restricting member 9 may be disposed on the outer peripheral portion of the recess 24, so that the workability of the step (S22) can be improved.
< Effect >
In the above-described semiconductor module 100, the recess 24 is formed in the region below the restriction member 9 and the connection member 8 at the main surface 7 a. A portion of the restraining member 9 and the connecting member 8 are located inside the recess 24. In this case, when the resin component of the connection member 8 is to flow out to the restricting member 9 side and the restricting member 9 is pressed outward, the restricting member 9 can be supported from the outer peripheral side by the side wall of the recess 24. Therefore, the generation of a problem such as the restriction member 9 being deformed by the pressure to form a path for the resin component to flow to the outside of the restriction member 9 can be suppressed. Further, since the restricting member 9 is disposed on the side wall of the recess 24, the workability of the step (S22) of disposing the restricting member 9 on the main surface 7a of the heat radiation member 7 can be improved.
Embodiment 5.
< Structure of semiconductor Module >
Fig. 14 is a schematic cross-sectional view showing a semiconductor module according to embodiment 5. The semiconductor module 100 shown in fig. 14 basically has the same structure as the semiconductor module 100 shown in fig. 13, but the structure of the semiconductor package 200 is different from the semiconductor module 100 shown in fig. 13. That is, in the semiconductor module 100 shown in fig. 14, similarly to the semiconductor module 100 according to embodiment 2, the pressing portion 22 that contacts the top 9a of the restricting member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200.
< Effect >
The semiconductor module 100 described above can obtain the same effects as the semiconductor module 100 according to embodiment 4 because the concave portion 24 is formed in the main surface 7a of the heat radiation member 7 as in the semiconductor module 100 according to embodiment 4. In the semiconductor module 100, the semiconductor package 200 includes the pressing portion 22 that contacts the top 9a of the restriction member 9. Therefore, the same effects as those of the semiconductor module 100 according to embodiment 2 described above can be obtained. That is, by pressing the top 9a of the restriction member 9 by the pressing portion 22 of the semiconductor package 200, the occurrence of the gap in the contact interface of the restriction member 9 and the semiconductor package 200 and the contact interface of the restriction member 9 and the heat dissipation member 7 can be suppressed. As a result, the resin component of the connection member 8 can be prevented from flowing out to the outside through the gap of the contact interface. In the above-described semiconductor module 100, it is preferable that the material constituting the restriction member 9 include an elastomer.
Embodiment 6.
In this embodiment, the semiconductor module according to embodiments 1to 5 is applied to a power conversion device. The present invention is not limited to a specific power conversion device, and a case where the present invention is applied to a three-phase inverter will be described below as embodiment 6.
Fig. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.
The power conversion system shown in fig. 15 includes a power supply 300, a power conversion device 400, and a load 500. The power supply 300 is a dc power supply, and supplies dc power to the power conversion device 400. The power supply 300 can include various power sources, for example, a direct current system, a solar cell, a storage battery, a rectifier circuit connected to an alternating current system, and an AC/DC converter. The power supply 300 may be configured by a DC/DC converter that converts direct-current power output from a direct-current system into predetermined power.
The power conversion device 400 is a three-phase inverter connected between the power supply 300 and the load 500, and converts dc power supplied from the power supply 300 into ac power to supply the ac power to the load 500. As shown in fig. 15, the power conversion device 400 includes a main conversion circuit 401 that converts dc power into ac power and outputs the ac power, and a control circuit 403 that outputs a control signal for controlling the main conversion circuit 401 to the main conversion circuit 401.
The load 500 is a three-phase motor driven by ac power supplied from the power conversion device 400. The load 500 is not limited to a specific application, and is a motor mounted on various electric devices, and is used as a motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner, for example.
Details of the power conversion device 400 are described below. The main conversion circuit 401 includes a switching element and a flywheel diode (not shown), and converts dc power supplied from the power supply 300 into ac power by switching operation of the switching element, and supplies the ac power to the load 500. The main conversion circuit 401 according to the present embodiment is a 2-level three-phase full-bridge circuit, and can include 6 switching elements and 6 flywheel diodes connected in anti-parallel to the respective switching elements. Each switching element and each flywheel diode of the main conversion circuit 401 include a semiconductor module 402 corresponding to any one of embodiments 1 to 5 described above. The 6 switching elements are connected in series for every 2 switching elements to constitute upper and lower arms, and each of the upper and lower arms constitutes each phase (U-phase, V-phase, W-phase) of the full bridge circuit. The output terminals of the upper and lower arms, that is, the 3 output terminals of the main conversion circuit 401 are connected to the load 500.
The main conversion circuit 401 includes a driving circuit (not shown) for driving each switching element, and the driving circuit may be incorporated in the semiconductor module 402 or may be provided independently of the semiconductor module 402. The driving circuit generates a driving signal for driving the switching element of the main conversion circuit 401, and supplies the driving signal to the control electrode of the switching element of the main conversion circuit 401. Specifically, in accordance with a control signal from a control circuit 403 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element. The drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element when the switching element is maintained in the on state, and is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element when the switching element is maintained in the off state.
The control circuit 403 controls the switching elements of the main conversion circuit 401 so as to supply desired power to the load 500. Specifically, the time (on-time) for which each switching element of the main conversion circuit 401 should be in the on-state is calculated based on the electric power to be supplied to the load 500. For example, the main conversion circuit 401 can be controlled by PWM control that modulates the on time of the switching element according to the voltage to be output. Then, a control command (control signal) is output to a drive circuit provided in the main conversion circuit 401 so that an on signal is output to the switching element to be turned on and an off signal is output to the switching element to be turned off at each time point. The drive circuit outputs an on signal or an off signal to the control electrode of each switching element in accordance with the control signal as a drive signal.
In the power conversion device according to the present embodiment, the semiconductor module according to any one of embodiments 1 to 5 is applied as the switching element and the flywheel diode of the main conversion circuit 401, and thus a highly reliable power conversion device can be realized.
In the present embodiment, an example in which the present invention is applied to a 2-level three-phase inverter has been described, but the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, the power conversion device is set to 2-level, but the power conversion device may be a 3-level or multi-level power conversion device, and the present invention may be applied to a single-phase inverter when power is supplied to a single-phase load. In addition, the present invention can be applied to a DC/DC converter and an AC/DC converter when power is supplied to a DC load or the like.
The power conversion device to which the present invention is applied is not limited to the case where the load is an electric motor, and for example, the power conversion device can be used as a power supply device for an electric discharge machine, a laser machine, an induction heating cooker, a non-contact power supply system, a solar power generation system, a power storage system, and the like.
The presently disclosed embodiments are considered in all respects to be illustrative and not restrictive. At least 2 of the embodiments disclosed herein may be combined as long as they are not contradictory. The scope of the present invention is defined by the appended claims, rather than by the description above, and is intended to include all modifications within the meaning and scope equivalent to the claims.
Claims (10)
1. A semiconductor module is provided with:
A heat dissipation member having a main surface;
A semiconductor package disposed on the main surface and including a semiconductor element;
a connection member which is located between the heat dissipation member and the semiconductor package, and connects the heat dissipation member and the semiconductor package, and which contains a resin component; and
A restricting member disposed on the main surface so as to surround the connecting member,
In a direction perpendicular to the main surface, a position of a top of the restriction member is farther from the main surface than a position of an outer peripheral portion of the semiconductor package-side surface in the connection member,
The semiconductor package includes a pressing portion that contacts the top portion of the restriction member.
2. The semiconductor module of claim 1, wherein,
A groove portion is formed in a region below the restriction member on the main surface,
A portion of the restraining member is located inside the groove portion.
3. A semiconductor module is provided with:
A heat dissipation member having a main surface;
A semiconductor package disposed on the main surface and including a semiconductor element;
a connection member which is located between the heat dissipation member and the semiconductor package, and connects the heat dissipation member and the semiconductor package, and which contains a resin component; and
A restricting member disposed on the main surface so as to surround the connecting member,
In a direction perpendicular to the main surface, a position of a top of the restriction member is farther from the main surface than a position of an outer peripheral portion of the semiconductor package-side surface in the connection member,
A recess is formed in the main surface in a region below the restricting member and the connecting member,
A portion of the restraining member and the connecting member are located inside the recess.
4. The semiconductor module according to claim 3, wherein,
The semiconductor package includes a pressing portion that contacts the top portion of the restriction member.
5. The semiconductor module according to any one of claims 1 to 4, wherein,
The material constituting the restraining member includes an elastomer.
6. The semiconductor module according to any one of claims 1 to 4, wherein,
The relative permittivity of the restraining member is greater than the relative permittivity of the connecting member.
7. The semiconductor module of claim 5, wherein,
The relative permittivity of the restraining member is greater than the relative permittivity of the connecting member.
8. A power conversion device is provided with:
A main conversion circuit having the semiconductor module according to any one of claims 1 to 7, the main conversion circuit converting input electric power and outputting the converted electric power; and
And a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
9. A method for manufacturing a semiconductor module includes the steps of:
a step of preparing a heat radiation member having a main surface;
a step of disposing a connection member containing a resin component on the main surface;
Disposing a restricting member on the main surface so as to surround the connecting member, the restricting member having a side surface facing a side end surface of the connecting member and a thickness thicker than that of the connecting member;
Disposing a semiconductor package including a semiconductor element on the connection member; and
And heating the connection member while pushing the semiconductor package toward the connection member, thereby connecting the heat dissipation member and the semiconductor package with the connection member.
10. The method for manufacturing a semiconductor module according to claim 9, wherein,
The step of disposing the restricting member includes the steps of:
A step of disposing a liquid to be the regulating member on the main surface; and
And a step of forming the restriction member by solidifying the liquid.
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| PCT/JP2019/021109 WO2020240699A1 (en) | 2019-05-28 | 2019-05-28 | Semiconductor module, method for manufacturing semiconductor module, and power conversion apparatus |
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| JP2012004358A (en) * | 2010-06-17 | 2012-01-05 | Denso Corp | Semiconductor module mounting structure |
| CN102446875A (en) * | 2010-10-13 | 2012-05-09 | 三菱电机株式会社 | Semiconductor device |
| JP2012142521A (en) * | 2011-01-06 | 2012-07-26 | Mitsubishi Electric Corp | Power semiconductor device |
| JP2012151164A (en) * | 2011-01-17 | 2012-08-09 | Mitsubishi Electric Corp | Semiconductor device |
| JP2012174965A (en) * | 2011-02-23 | 2012-09-10 | Mitsubishi Electric Corp | Power semiconductor device |
| JP2013065648A (en) * | 2011-09-16 | 2013-04-11 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
| JP2013110181A (en) * | 2011-11-18 | 2013-06-06 | Mitsubishi Electric Corp | Electric power conversion apparatus and manufacturing method of the same |
| CN104011853A (en) * | 2011-12-26 | 2014-08-27 | 三菱电机株式会社 | Electric power semiconductor device and method for producing same |
| CN105304578A (en) * | 2014-07-15 | 2016-02-03 | 富士电机株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2017092056A (en) * | 2015-11-02 | 2017-05-25 | 三菱電機株式会社 | Power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7134345B2 (en) | 2022-09-09 |
| CN113841235A (en) | 2021-12-24 |
| WO2020240699A1 (en) | 2020-12-03 |
| JPWO2020240699A1 (en) | 2020-12-03 |
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