JP7134345B2 - SEMICONDUCTOR MODULE, SEMICONDUCTOR MODULE MANUFACTURING METHOD AND POWER CONVERTER - Google Patents

SEMICONDUCTOR MODULE, SEMICONDUCTOR MODULE MANUFACTURING METHOD AND POWER CONVERTER Download PDF

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JP7134345B2
JP7134345B2 JP2021521626A JP2021521626A JP7134345B2 JP 7134345 B2 JP7134345 B2 JP 7134345B2 JP 2021521626 A JP2021521626 A JP 2021521626A JP 2021521626 A JP2021521626 A JP 2021521626A JP 7134345 B2 JP7134345 B2 JP 7134345B2
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semiconductor package
main surface
semiconductor module
semiconductor
heat dissipation
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JPWO2020240699A1 (en
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耕三 原田
裕基 塩田
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

この発明は、半導体モジュール、半導体モジュールの製造方法および電力変換装置に関する。 The present invention relates to a semiconductor module, a method of manufacturing a semiconductor module, and a power converter.

従来、半導体素子を含む半導体パッケージを、ヒートシンクなどの放熱部材に対して樹脂絶縁層などの接続部材により接続した半導体モジュールおよび当該半導体モジュールを用いた電力変換装置が知られている（たとえば、特開２０１３－１１０１８１号公報参照）。特開２０１３－１１０１８１号公報では、接続部材の厚みをコントロールするため、半導体パッケージと放熱部材との間において、樹脂絶縁層の外周を囲む樹脂厚み規制部材が配置されている。このような構成とすることで、特開２０１３－１１０１８１号公報では樹脂絶縁層での電気絶縁性と熱伝導性とを安定して確保できるとしている。 Conventionally, a semiconductor module in which a semiconductor package including a semiconductor element is connected to a heat dissipation member such as a heat sink by a connecting member such as a resin insulating layer, and a power conversion device using the semiconductor module are known (for example, Japanese Unexamined Patent Application Publication No. 2013-110181). In Japanese Unexamined Patent Application Publication No. 2013-110181, in order to control the thickness of the connection member, a resin thickness regulating member surrounding the outer periphery of the resin insulation layer is arranged between the semiconductor package and the heat dissipation member. According to JP-A-2013-110181, with such a configuration, the electrical insulation and thermal conductivity of the resin insulation layer can be stably ensured.

特開２０１３－１１０１８１号公報JP 2013-110181 A

上述した従来の半導体モジュールにおいて、樹脂厚み規制部材の上面および下面の位置は、樹脂絶縁層の上面および下面の位置と同じになっている。つまり、樹脂厚み規制部材の上面と半導体パッケージの下面との第１接続界面と、樹脂絶縁層と半導体パッケージとの接続界面とは同じ平面上に位置する。また、樹脂厚み規制部材の下面と放熱部材の上面との第２接続界面と、樹脂絶縁層と放熱部材との接続界面とは同じ平面上に位置する。ここで、樹脂絶縁層により半導体パッケージを放熱部材に接着する時には、樹脂絶縁層を加圧しながら加熱する。このとき、樹脂厚み規制部材における第１接続界面または第２接続界面を介して、樹脂絶縁層の樹脂成分が半導体パッケージの外周側に流れ出す場合がある。 In the conventional semiconductor module described above, the positions of the upper and lower surfaces of the resin thickness regulating member are the same as the positions of the upper and lower surfaces of the resin insulation layer. That is, the first connection interface between the upper surface of the resin thickness regulating member and the lower surface of the semiconductor package and the connection interface between the resin insulation layer and the semiconductor package are located on the same plane. Further, the second connection interface between the lower surface of the resin thickness regulating member and the upper surface of the heat radiating member and the connection interface between the resin insulating layer and the heat radiating member are located on the same plane. Here, when bonding the semiconductor package to the heat dissipating member by means of the resin insulation layer, the resin insulation layer is heated while being pressurized. At this time, the resin component of the resin insulation layer may flow out to the outer peripheral side of the semiconductor package via the first connection interface or the second connection interface of the resin thickness regulating member.

この場合、接続部材としての樹脂絶縁層内において樹脂成分が大きく移動することで樹脂絶縁層においてボイドやクラックが発生する恐れがある。このような接続部材でのボイドやクラックの発生は、半導体モジュールの絶縁性や放熱性を低下させ、結果的に半導体モジュールの信頼性が低下する原因となる。 In this case, voids and cracks may occur in the resin insulation layer due to large movement of the resin component in the resin insulation layer as the connecting member. Occurrence of voids and cracks in such connection members deteriorates the insulation and heat dissipation properties of the semiconductor module, resulting in a reduction in the reliability of the semiconductor module.

この発明は、上記のような課題を解決するためになされたものであり、この発明の目的は、信頼性の高い半導体モジュールおよび当該半導体モジュールを用いた電力変換装置を提供することである。 The present invention has been made to solve the above problems, and an object of the present invention is to provide a highly reliable semiconductor module and a power converter using the semiconductor module.

本開示に従った半導体モジュールは、放熱部材と、半導体パッケージと、接続部材と、規制部材とを備える。放熱部材は主面を有する。半導体パッケージは、主面上に配置される。半導体パッケージは半導体素子を含む。接続部材は、放熱部材と半導体パッケージとの間に位置する。接続部材は、放熱部材と半導体パッケージとを接続する。接続部材は樹脂成分を含む。規制部材は、接続部材を囲むように主面上に配置される。主面に垂直な方向において、規制部材の頂部の位置は、接続部材における半導体パッケージ側の表面の外周部の位置より主面から離れている。 A semiconductor module according to the present disclosure includes a heat dissipation member, a semiconductor package, a connecting member, and a regulating member. The heat dissipation member has a main surface. A semiconductor package is arranged on the main surface. A semiconductor package includes a semiconductor device. The connection member is positioned between the heat dissipation member and the semiconductor package. The connection member connects the heat dissipation member and the semiconductor package. The connection member contains a resin component. A restricting member is arranged on the main surface so as to surround the connecting member. In the direction perpendicular to the main surface, the position of the top of the restricting member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side.

本開示に従った電力変換装置は、主変換回路と制御回路とを備える。主変換回路は、上記半導体モジュールを有し、入力される電力を変換して出力する。制御回路は、主変換回路を制御する制御信号を主変換回路に出力する。 A power converter according to the present disclosure includes a main converter circuit and a control circuit. The main conversion circuit has the semiconductor module described above, converts input power, and outputs the converted power. The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

本開示に従った半導体モジュールの製造方法は、放熱部材を準備する工程と、接続部材を配置する工程と、規制部材を配置する工程と、半導体パッケージを配置する工程と、放熱部材と半導体パッケージとを接続する工程とを備える。放熱部材は主面を有する。接続部材を配置する工程では、主面上に接続部材が配置される。接続部材は樹脂成分を含む。規制部材を配置する工程では、主面上に、接続部材を囲むように規制部材が配置される。半導体パッケージを配置する工程では、接続部材上に、半導体素子を含む半導体パッケージが配置される。上記接続する工程では、半導体パッケージを接続部材側に向けて押圧しながら接続部材を加熱する。この結果、接続部材によって放熱部材と半導体パッケージとが接続される。 A method for manufacturing a semiconductor module according to the present disclosure includes a step of preparing a heat dissipation member, a step of arranging a connection member, a step of arranging a regulation member, a step of arranging a semiconductor package, and a heat dissipation member and a semiconductor package. and connecting. The heat dissipation member has a main surface. In the step of arranging the connection member, the connection member is arranged on the main surface. The connection member contains a resin component. In the step of arranging the regulating member, the regulating member is arranged on the main surface so as to surround the connection member. In the step of arranging the semiconductor package, the semiconductor package including the semiconductor element is arranged on the connection member. In the connecting step, the connecting member is heated while pressing the semiconductor package toward the connecting member. As a result, the heat dissipation member and the semiconductor package are connected by the connection member.

上記によれば、接続部材を囲むように配置された規制部材の頂部の位置は、接続部材における半導体パッケージ側の表面の外周部の位置より主面から離れているので、接続部材により半導体パッケージを放熱部材に接続する際に、接続部材の一部が半導体パッケージの外側に漏れ出すといった問題の発生を抑制できる。この結果、信頼性の高い半導体モジュールおよび当該半導体モジュールを用いた電力変換装置が得られる。 According to the above, since the position of the top of the regulating member arranged to surround the connection member is farther from the main surface than the position of the outer peripheral portion of the surface of the connection member on the semiconductor package side, the semiconductor package is held by the connection member. It is possible to suppress the occurrence of a problem that a part of the connecting member leaks out of the semiconductor package when connecting to the heat dissipating member. As a result, a highly reliable semiconductor module and a power converter using the semiconductor module can be obtained.

実施の形態１に係る半導体モジュールを示す断面模式図である。1 is a schematic cross-sectional view showing a semiconductor module according to Embodiment 1; FIG. 図１に示した半導体モジュールを構成する半導体パッケージを示す断面模式図である。2 is a schematic cross-sectional view showing a semiconductor package that constitutes the semiconductor module shown in FIG. 1; FIG. 図１に示した半導体モジュールの平面模式図である。2 is a schematic plan view of the semiconductor module shown in FIG. 1; FIG. 図１に示した半導体モジュールの変形例を示す断面模式図である。It is a cross-sectional schematic diagram which shows the modification of the semiconductor module shown in FIG. 図１に示した半導体モジュールの製造方法を説明するためのフローチャートである。2 is a flow chart for explaining a method of manufacturing the semiconductor module shown in FIG. 1; 図５に示した半導体モジュールの製造方法の配置工程を説明するためのフローチャートである。6 is a flow chart for explaining an arrangement process of the method of manufacturing the semiconductor module shown in FIG. 5; 図６に示した半導体モジュールの製造方法の規制部材を配置する工程の一例を説明するためのフローチャートである。FIG. 7 is a flow chart for explaining an example of a process of arranging a regulating member in the method of manufacturing the semiconductor module shown in FIG. 6; FIG. 参考例である半導体モジュールを示す断面模式図である。It is a cross-sectional schematic diagram which shows the semiconductor module which is a reference example. 参考例である半導体モジュールを示す断面模式図である。It is a cross-sectional schematic diagram which shows the semiconductor module which is a reference example. 実施の形態２に係る半導体モジュールを示す断面模式図である。8 is a schematic cross-sectional view showing a semiconductor module according to Embodiment 2; FIG. 図１０の領域ＸＩを示す拡大断面模式図である。11 is an enlarged schematic sectional view showing region XI in FIG. 10; FIG. 実施の形態３に係る半導体モジュールを示す断面模式図である。FIG. 11 is a schematic cross-sectional view showing a semiconductor module according to Embodiment 3; 実施の形態４に係る半導体モジュールを示す断面模式図である。FIG. 12 is a schematic cross-sectional view showing a semiconductor module according to Embodiment 4; 実施の形態５に係る半導体モジュールを示す断面模式図である。FIG. 12 is a schematic cross-sectional view showing a semiconductor module according to Embodiment 5; 実施の形態６に係る電力変換装置を適用した電力変換システムの構成を示すブロック図である。FIG. 12 is a block diagram showing the configuration of a power conversion system to which a power conversion device according to Embodiment 6 is applied;

以下、本発明の実施の形態を説明する。なお、同一の構成には同一の参照番号を付し、その説明は繰り返さない。 Embodiments of the present invention will be described below. In addition, the same reference numerals are given to the same configurations, and the description thereof will not be repeated.

実施の形態１．
＜半導体モジュールの構成＞
図１は、実施の形態１に係る半導体モジュール１００を示す断面模式図である。図２は、図１に示した半導体モジュール１００を構成する半導体パッケージ２００を示す断面模式図である。図３は、図１に示した半導体モジュールの平面模式図である。Embodiment 1.
<Configuration of semiconductor module>
FIG. 1 is a schematic cross-sectional view showing a semiconductor module 100 according to Embodiment 1. FIG. FIG. 2 is a schematic cross-sectional view showing a semiconductor package 200 that constitutes the semiconductor module 100 shown in FIG. 3 is a schematic plan view of the semiconductor module shown in FIG. 1. FIG.

図１～図３に示した半導体モジュール１００は、たとえばパワー半導体モジュールであって、放熱部材７と、半導体パッケージ２００と、接続部材８と、規制部材９とを主に備える。半導体パッケージ２００は、接続部材８により放熱部材７に接続されている。接続部材８の外周部を囲むように規制部材９が配置されている。規制部材９はたとえば樹脂流れ出し防止材である。主面７ａに垂直な方向において、規制部材９の頂部９ａの位置は、接続部材８における半導体パッケージ２００側の表面の外周部の位置より主面７ａから離れている。 A semiconductor module 100 shown in FIGS. 1 to 3 is, for example, a power semiconductor module, and mainly includes a heat dissipation member 7, a semiconductor package 200, a connecting member 8, and a restricting member 9. As shown in FIG. The semiconductor package 200 is connected to the heat dissipation member 7 by the connection member 8 . A regulating member 9 is arranged so as to surround the outer peripheral portion of the connecting member 8 . The regulating member 9 is, for example, a resin outflow prevention material. In the direction perpendicular to the main surface 7a, the position of the top portion 9a of the regulating member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connecting member 8 on the semiconductor package 200 side.

ヒートシンクである放熱部材７は主面７ａを有する。放熱部材７は、たとえばアルミニウムまたは銅など金属により構成されている。なお、本明細書の実施の形態における全ての図では、放熱部材７は、平坦なブロック状であるが、半導体パッケージ２００を接着する主面７ａ以外の部分について、放熱面積を増やすためにフィン状や凹凸状に加工してもよい。 The heat dissipation member 7, which is a heat sink, has a main surface 7a. Heat dissipation member 7 is made of metal such as aluminum or copper. In all the drawings of the embodiments of this specification, the heat dissipating member 7 has a flat block shape. or may be processed into an uneven shape.

半導体パッケージ２００は、放熱部材７の主面７ａ上に配置される。半導体パッケージ２００は、半導体素子１と、ヒートスプレッダ３と、リードフレーム５と、ボンディングワイヤ６と、封止樹脂４とを主に含む。ヒートスプレッダ３の上面上にはんだ２を介して半導体素子１が接続されている。半導体素子１は、リードフレーム５とボンディングワイヤ６により接続されている。封止樹脂４は、ヒートスプレッダ３と、半導体素子１と、リードフレーム５の一部と、ボンディングワイヤ６とを内部に配置するように形成されている。封止樹脂４は上記半導体素子１，リードフレーム５の一部、ヒートスプレッダ３の一部、およびボンディングワイヤ６を封止する。 The semiconductor package 200 is arranged on the main surface 7 a of the heat dissipation member 7 . A semiconductor package 200 mainly includes a semiconductor element 1 , a heat spreader 3 , a lead frame 5 , bonding wires 6 and a sealing resin 4 . A semiconductor element 1 is connected to the upper surface of the heat spreader 3 via solder 2 . A semiconductor element 1 is connected to a lead frame 5 and a bonding wire 6 . The sealing resin 4 is formed so as to arrange the heat spreader 3, the semiconductor element 1, a part of the lead frame 5, and the bonding wires 6 inside. A sealing resin 4 seals the semiconductor element 1 , part of the lead frame 5 , part of the heat spreader 3 and bonding wires 6 .

パワー半導体素子である半導体素子１としては、ＭＯＳＦＥＴ（Ｍｅｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）やＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）などの電力制御用半導体素子、または還流ダイオードなどが用いられる。ヒートスプレッダ３は、銅またはアルミニウムなどの放熱性に優れる金属により形成されている。なお、ヒートスプレッダ３と半導体素子１とを接続する接続材料として、上記のようにはんだ２を用いているが、接続材料としてはこれに限定されるものではない、接続材料として、はんだ２に代えて焼結銀または導電性接着剤を用いてもよい。半導体素子１とヒートスプレッダ３とを、液相拡散接合技術を用いて接合してもよい。 As the semiconductor element 1, which is a power semiconductor element, a power control semiconductor element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor), or a free wheel diode is used. The heat spreader 3 is made of metal such as copper or aluminum, which has excellent heat dissipation properties. As described above, the solder 2 is used as a connection material for connecting the heat spreader 3 and the semiconductor element 1, but the connection material is not limited to this. Sintered silver or conductive adhesives may also be used. The semiconductor element 1 and the heat spreader 3 may be bonded using a liquid phase diffusion bonding technique.

リードフレーム５は、電流および電圧の入出力に用いられる外部端子としてパターン形成されている。リードフレーム５は一般的にヒートスプレッダ３と同様に銅などの金属により構成される。リードフレーム５の一部はヒートスプレッダ３とはんだにより接合されている。リードフレーム５の他の一部は、半導体素子１とボンディングワイヤ６により電気的に接続されている。ボンディングワイヤ６は、たとえば線径０．１ｍｍ以上０．５ｍｍ以下のアルミニウム合金製もしくは銅合金製の線材である。 The lead frame 5 is patterned as external terminals used for inputting and outputting current and voltage. Like the heat spreader 3, the lead frame 5 is generally made of metal such as copper. A portion of the lead frame 5 is joined to the heat spreader 3 by soldering. Another part of the lead frame 5 is electrically connected to the semiconductor element 1 by bonding wires 6 . The bonding wire 6 is, for example, a wire made of an aluminum alloy or a copper alloy having a wire diameter of 0.1 mm or more and 0.5 mm or less.

リードフレーム５とヒートスプレッダ３とを接合する接続材料としてのはんだの材質は、半導体素子１とヒートスプレッダ３とを接続するはんだ２の材質と同じであってもよい。リードフレーム５とヒートスプレッダ３とを接合する接続材料は、焼結銀または導電性接着剤であってもよい。リードフレーム５とヒートスプレッダ３とは液相拡散接合技術を用いて接合されてもよい。 The material of the solder as the connecting material that joins the lead frame 5 and the heat spreader 3 may be the same as the material of the solder 2 that connects the semiconductor element 1 and the heat spreader 3 . The connecting material that joins the lead frame 5 and the heat spreader 3 may be sintered silver or a conductive adhesive. The lead frame 5 and the heat spreader 3 may be bonded using a liquid phase diffusion bonding technique.

なお、上述した半導体パッケージ２００では、半導体素子１とリードフレーム５との電気的接続をボンディングワイヤ６により行っているが、他の構成を用いてもよい。たとえば、ボンディングリボンまたはリードフレーム５を半導体素子１上まで延長させてもよい。当該ボンディングリボンまたはリードフレーム５と半導体素子１とをはんだ、焼結銀、または導電性接着剤により接続してもよい。ボンディングリボンまたはリードフレーム５と半導体素子１とを、液相拡散接合技術を用いて直接接合してもよい。また、リードフレーム５とヒートスプレッダ３とは金属板をエッチングまたは金型加工することにより一体成形して得られる構造としてもよい。つまり、リードフレーム５とヒートスプレッダ３とは一体化した部材であってもよい。 In the semiconductor package 200 described above, the semiconductor element 1 and the lead frame 5 are electrically connected by the bonding wires 6, but other configurations may be used. For example, a bonding ribbon or lead frame 5 may extend over the semiconductor device 1 . The bonding ribbon or lead frame 5 and the semiconductor element 1 may be connected by solder, sintered silver, or a conductive adhesive. The bonding ribbon or lead frame 5 and the semiconductor element 1 may be directly bonded using a liquid phase diffusion bonding technique. Also, the lead frame 5 and the heat spreader 3 may be formed integrally by etching or molding a metal plate. That is, the lead frame 5 and the heat spreader 3 may be an integrated member.

以上に述べた各部材を覆うように、封止樹脂４が配置されている。つまり半導体素子１、はんだ２、ヒートスプレッダ３、ボンディングワイヤ６はすべて、その表面の全体が封止樹脂４に覆われている。ただし、ヒートスプレッダ３の上方から外側へ向かうように延びるリードフレーム５は、その一部、すなわちリードフレーム５の内側の部分のみが封止樹脂４に覆われている。リードフレーム５における他の一部、特にリードフレーム５の外側の部分は封止樹脂４には覆われない。これにより封止樹脂４に覆われていないリードフレーム５の外側の部分が半導体モジュール１００の外側と電気的に接続可能となっている。ヒートスプレッダ３についても、当該ヒートスプレッダ３の底面は封止樹脂４には覆われず露出している。ヒートスプレッダ３の底面は接続部材８を介して放熱部材７と接続されている。このような構成により、半導体素子１から発生した熱ははんだ２およびヒートスプレッダ３を介して半導体パッケージ２００の外部に放出される。 A sealing resin 4 is arranged so as to cover each member described above. That is, the semiconductor element 1, solder 2, heat spreader 3, and bonding wires 6 are all covered with the sealing resin 4 over their entire surfaces. However, the lead frame 5 extending outward from above the heat spreader 3 is partially covered with the sealing resin 4 , that is, only the inner portion of the lead frame 5 . Other parts of the lead frame 5 , especially the outer part of the lead frame 5 are not covered with the sealing resin 4 . As a result, the outer portion of the lead frame 5 that is not covered with the sealing resin 4 can be electrically connected to the outer side of the semiconductor module 100 . As for the heat spreader 3 as well, the bottom surface of the heat spreader 3 is not covered with the sealing resin 4 and is exposed. A bottom surface of the heat spreader 3 is connected to the heat radiating member 7 via the connecting member 8 . With such a configuration, heat generated from the semiconductor element 1 is released to the outside of the semiconductor package 200 via the solder 2 and the heat spreader 3 .

封止樹脂４としては、任意の樹脂を用いることができるが、たとえばトランスファーモールド成形されたエポキシ樹脂を用いることができる。封止樹脂４が半導体素子１の周囲を覆うことにより、半導体素子１が埃や湿度等の外的環境の影響を受けることを防止できる。この結果、半導体パッケージ２００の信頼性を向上させることができる。 Any resin can be used as the sealing resin 4, and for example, an epoxy resin formed by transfer molding can be used. By covering the periphery of the semiconductor element 1 with the sealing resin 4, the semiconductor element 1 can be prevented from being affected by the external environment such as dust and humidity. As a result, the reliability of the semiconductor package 200 can be improved.

接続部材８は、放熱部材７と半導体パッケージ２００との間に位置する。接続部材８は、放熱部材７と半導体パッケージ２００とを接続する。接続部材８は例えば樹脂絶縁層である。接続部材８は、熱伝導性及び電気絶縁性に優れた樹脂層であることが好ましい。このような要求を満たす部材として、無機充填材を熱硬化性樹脂の硬化物中に分散させた熱伝導性シートが広く用いられている。つまり、接続部材８として上記熱伝導性シートを用いることができる。熱伝導性シートに用いられる無機充填材としては、アルミナ、窒化ホウ素、シリカ、窒化アルミニウム等が挙げられる。特に高い熱伝導性および絶縁性が要求される場合、上記無機充填材として窒化ホウ素がよく用いられる。窒化ホウ素は、熱伝導性及び電気絶縁性に加えて、化学的安定性にも優れている。さらに、窒化ホウ素は、無毒性且つ比較的安価でもある。 The connection member 8 is positioned between the heat dissipation member 7 and the semiconductor package 200 . The connection member 8 connects the heat dissipation member 7 and the semiconductor package 200 . The connection member 8 is, for example, a resin insulation layer. The connection member 8 is preferably a resin layer having excellent thermal conductivity and electrical insulation. As a member that satisfies such requirements, a thermally conductive sheet in which an inorganic filler is dispersed in a cured product of a thermosetting resin is widely used. That is, the heat conductive sheet can be used as the connection member 8 . Inorganic fillers used in the thermally conductive sheet include alumina, boron nitride, silica, aluminum nitride and the like. Boron nitride is often used as the inorganic filler when particularly high thermal conductivity and insulation are required. Boron nitride has excellent chemical stability in addition to thermal conductivity and electrical insulation. Additionally, boron nitride is non-toxic and relatively inexpensive.

なお、接続部材８としては、窒化ホウ素のような無機材料を圧縮焼成して得た層に、熱硬化性樹脂を含浸させたものを用いてもよい。また、接続部材８として、上述した熱伝導性シートと比較して放熱性は低下するが、グリースや、無機充填材を添加していない熱硬化絶縁樹脂の層を用いてもよい。 As the connecting member 8, a layer obtained by compressing and baking an inorganic material such as boron nitride and impregnating the layer with a thermosetting resin may be used. Also, as the connection member 8, a layer of a thermosetting insulating resin to which no grease or inorganic filler is added may be used, although its heat dissipation is lower than that of the above-described thermally conductive sheet.

以上のように構成された半導体パッケージ２００は、動作中に半導体素子１から発生した熱を、はんだ２、ヒートスプレッダ３、および接続部材８を介して放熱部材７に伝える。放熱部材７は、ヒートスプレッダ３と同様、銅またはアルミニウムといった放熱性に優れる金属で構成されている。 The semiconductor package 200 configured as described above transfers heat generated from the semiconductor element 1 during operation to the heat dissipation member 7 via the solder 2 , the heat spreader 3 , and the connection member 8 . Like the heat spreader 3, the heat dissipation member 7 is made of a metal such as copper or aluminum that has excellent heat dissipation properties.

規制部材９は、接続部材８を囲むように主面７ａ上に配置される。規制部材９は、主面７ａに形成された溝部２１に当該規制部材９の下部がはめ込まれた状態で固定されている。溝部２１は平面視において放熱部材７の主面７ａに半導体パッケージ２００を囲むように形成されている。規制部材９は、金属製の枠、またはＰＰＳ（ポリフェニレンサルファイド）樹脂、ＰＢＴ（ポリブチレンテレフタレート）樹脂のような樹脂製の枠であってもよい。規制部材９は、シリコーンゴムのような弾性体を含む枠体でもよい。このように規制部材９として弾性体を含む枠体を用いる場合、溝部２１の寸法バラつきがあっても、規制部材９を溝部２１に確実にはめ込むことができる。溝部２１へ規制部材９の固定方法は、嵌合だけでも良いが、他の方法を用いてもよい。たとえば、溝部２１への規制部材９の固定強度を高めるために、図４に示すように接着剤などの接着部材４１を介して規制部材９を溝部２１に接着してもよい。ここで、図４は、図１に示した半導体モジュールの変形例を示す断面模式図である。図４に示した半導体モジュール１００は基本的には図１～図３に示した半導体モジュール１００と同様の構成を備えるが、規制部材９が接着部材４１により溝部２１に固定されている点が図１～図３に示した半導体モジュール１００と異なっている。図４に示した半導体モジュール１００では、接着部材４１が少なくとも規制部材９の底面と溝部２１の底面および側面の一部とを接着する。 The regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8 . The regulating member 9 is fixed in a state in which the lower portion of the regulating member 9 is fitted in a groove portion 21 formed in the main surface 7a. The groove portion 21 is formed on the main surface 7a of the heat dissipation member 7 so as to surround the semiconductor package 200 in plan view. The regulating member 9 may be a metal frame or a resin frame such as PPS (polyphenylene sulfide) resin or PBT (polybutylene terephthalate) resin. The regulating member 9 may be a frame containing an elastic body such as silicone rubber. When a frame containing an elastic body is used as the regulating member 9 in this manner, the regulating member 9 can be reliably fitted into the groove 21 even if the groove 21 has variations in dimensions. As a method for fixing the restricting member 9 to the groove portion 21, only fitting may be used, but other methods may be used. For example, in order to increase the fixing strength of the regulation member 9 to the groove portion 21, the regulation member 9 may be adhered to the groove portion 21 via an adhesive member 41 such as an adhesive as shown in FIG. Here, FIG. 4 is a schematic cross-sectional view showing a modification of the semiconductor module shown in FIG. The semiconductor module 100 shown in FIG. 4 basically has the same configuration as the semiconductor module 100 shown in FIGS. It is different from the semiconductor module 100 shown in FIGS. In the semiconductor module 100 shown in FIG. 4 , the bonding member 41 bonds at least the bottom surface of the regulating member 9 to the bottom surface and part of the side surfaces of the groove portion 21 .

放熱部材７に固定された規制部材９の成形方法として、上記のように予め枠状に形成された規制部材９を放熱部材７の主面７ａに設置、固定してもよい。また、規制部材９を形成するため、規制部材９となるべき液状材である液体材料を放熱部材７の溝部２１に配置し、そのご液体材料を固化してもよい。液体材料を溝部２１の内部に配置する方法としては、任意の方法を用いることができるが、たとえば塗布法または印刷法を用いることができる。また、規制部材９の比誘電率εを、接続部材８の比誘電率εよりも大きくしてもよい。この場合、半導体モジュール１００の動作中にヒートスプレッダ３の端部での部分放電を抑制できる。この結果、半導体モジュール１００の絶縁性を向上させることができる。 As a molding method of the regulating member 9 fixed to the heat radiating member 7 , the regulating member 9 previously formed into a frame shape as described above may be placed and fixed on the main surface 7 a of the heat radiating member 7 . Further, in order to form the regulating member 9, a liquid material to be the regulating member 9 may be placed in the groove portion 21 of the heat radiating member 7, and the liquid material may be solidified. Any method can be used as a method for disposing the liquid material inside the grooves 21, and for example, a coating method or a printing method can be used. Also, the relative permittivity ε of the regulating member 9 may be larger than the relative permittivity ε of the connection member 8 . In this case, partial discharge at the end of the heat spreader 3 can be suppressed during operation of the semiconductor module 100 . As a result, the insulation of the semiconductor module 100 can be improved.

＜半導体モジュールの製造方法＞
図５は、図１に示した半導体モジュールの製造方法を説明するためのフローチャートである。図６は、図５に示した半導体モジュールの製造方法の配置工程を説明するためのフローチャートである。図７は、図６に示した半導体モジュールの製造方法の規制部材を配置する工程の一例を説明するためのフローチャートである。図８および図９は、参考例である半導体モジュールを示す断面模式図である。<Manufacturing method of semiconductor module>
FIG. 5 is a flow chart for explaining a method of manufacturing the semiconductor module shown in FIG. FIG. 6 is a flow chart for explaining the placement process of the method of manufacturing the semiconductor module shown in FIG. FIG. 7 is a flow chart for explaining an example of a process of arranging a regulating member in the method of manufacturing the semiconductor module shown in FIG. 8 and 9 are schematic cross-sectional views showing a semiconductor module as a reference example.

図５および図６を参照して、半導体モジュール１００の製造方法では、まず準備工程（Ｓ１０）を実施する。この工程（Ｓ１０）では、放熱部材７、接続部材８、規制部材９、半導体パッケージ２００を準備する。放熱部材７の主面７ａには、図１に示すように溝部２１が予め形成されている。 5 and 6, in the method for manufacturing semiconductor module 100, first, a preparation step (S10) is performed. In this step (S10), the heat dissipation member 7, the connection member 8, the regulation member 9, and the semiconductor package 200 are prepared. A groove 21 is formed in advance on the main surface 7a of the heat radiating member 7, as shown in FIG.

次に、配置工程（Ｓ２０）を実施する。この工程（Ｓ２０）では、放熱部材７の主面７ａ上に接続部材８および半導体パッケージ２００を積層配置した積層体を得る。このとき接続部材８の周囲には規制部材９を配置する。 Next, an arrangement step (S20) is performed. In this step ( S<b>20 ), a laminate is obtained in which the connection member 8 and the semiconductor package 200 are laminated on the main surface 7 a of the heat dissipation member 7 . At this time, a restricting member 9 is arranged around the connecting member 8 .

具体的には、この工程（Ｓ２０）では図６に示すように接続部材を配置する工程（Ｓ２１）を実施する。樹脂絶縁層形成工程である工程（Ｓ２１）では、放熱部材７の主面７ａ上に樹脂成分を含む接続部材８を配置する。次に、規制部材を配置する工程（Ｓ２２）を実施する。この工程（Ｓ２２）では、放熱部材７の主面７ａにおける溝部２１に規制部材９を配置する。規制部材９は接続部材８の周囲を囲むように配置される。 Specifically, in this step (S20), as shown in FIG. 6, the step (S21) of arranging the connecting member is performed. In step ( S<b>21 ), which is a step of forming a resin insulating layer, connecting member 8 containing a resin component is placed on main surface 7 a of heat dissipation member 7 . Next, the step of arranging the regulating member (S22) is performed. In this step ( S<b>22 ), the restricting member 9 is arranged in the groove 21 on the main surface 7 a of the heat radiating member 7 . The restricting member 9 is arranged so as to surround the connecting member 8 .

なお、この工程（Ｓ２２）では、図７に示すプロセスを用いてもよい。具体的には、規制部材９を配置するべき領域に液体を配置する工程（Ｓ２２１）を実施する。この工程（Ｓ２２１）では、たとえば放熱部材７の主面７ａの溝部７ａ内部に規制部材９となるべき液体材料を配置する。次に、固化する工程（Ｓ２２２）を実施する。この工程（Ｓ２２２）では、液体材料を加熱または露光などの処理により固化する。このようにして、規制部材９を放熱部材７の主面７ａ上に配置する。なお、工程（Ｓ２２１）と工程（Ｓ２２２）を複数回繰り返し、液体材料を固化した層を複数層積層することで規制部材９を構成してもよい。 In addition, in this step (S22), the process shown in FIG. 7 may be used. Specifically, the step (S221) of arranging the liquid in the region where the regulating member 9 is to be arranged is performed. In this step ( S<b>221 ), for example, the liquid material to be the restricting member 9 is placed inside the groove 7 a of the main surface 7 a of the heat radiating member 7 . Next, the step of solidifying (S222) is performed. In this step (S222), the liquid material is solidified by processing such as heating or exposure. In this manner, the regulating member 9 is arranged on the main surface 7a of the heat radiating member 7. As shown in FIG. Note that the regulating member 9 may be configured by repeating the steps (S221) and (S222) a plurality of times to stack a plurality of layers obtained by solidifying the liquid material.

次に、半導体パッケージを配置する工程（Ｓ２３）を実施する。この工程（Ｓ２３）では、接続部材８上に半導体パッケージ２００を搭載する。 Next, the step of arranging the semiconductor package (S23) is performed. In this step ( S<b>23 ), the semiconductor package 200 is mounted on the connection member 8 .

次に、図５に示すように接続工程（Ｓ３０）を実施する。この工程（Ｓ３０）では、たとえば加圧加熱できるプレス機等を用いて、半導体パッケージ２００上から、放熱部材７に向かう方向に加圧しながら接続部材８を加熱する。加熱条件としては、たとえば１００℃以上２５０℃以下といった温度条件を用いることができる。また、加圧条件としての圧力はたとえば０．５ＭＰａ以上２０ＭＰａ以下とすることができる。 Next, a connecting step (S30) is performed as shown in FIG. In this step ( S<b>30 ), the connection member 8 is heated while applying pressure from above the semiconductor package 200 in the direction toward the heat dissipation member 7 using a press machine capable of pressurizing and heating, for example. As the heating conditions, temperature conditions such as 100° C. or higher and 250° C. or lower can be used. Moreover, the pressure as the pressurizing condition can be set to, for example, 0.5 MPa or more and 20 MPa or less.

ここで、上記工程（Ｓ３０）での圧力が大きかった場合、規制部材９を配置していない構成においては、接続部材８の一部を形成している樹脂（たとえば熱硬化性樹脂）が図８に示すように、半導体パッケージ２００の接着面より外にはみ出して流出部３１を形成する場合がある。このような流出部３１が大きくなると、半導体パッケージ２００と放熱部材７と間の距離Ｈが設計値より小さくなる。この結果、ヒートスプレッダ３と放熱部材７との間の絶縁特性が劣化する。また上記圧力が大きい場合、接続部材８内で樹脂の移動が大きくなる。このため、接続部材８内にボイド（気泡）やクラックが発生する頻度が高くなる。この場合も同様に、ヒートスプレッダ３と放熱部材７との間の絶縁特性が劣化する。さらに、接続部材８の内部のボイドやクラックは放熱特性の劣化の原因にもなり得る。 Here, when the pressure in the above step (S30) is large, in a configuration in which the regulating member 9 is not arranged, the resin (for example, a thermosetting resin) forming a part of the connecting member 8 is as shown in FIG. 2, there is a case where the outflow part 31 is formed by protruding outside the bonding surface of the semiconductor package 200. As shown in FIG. If the outflow portion 31 becomes larger, the distance H between the semiconductor package 200 and the heat dissipation member 7 becomes smaller than the designed value. As a result, the insulation properties between the heat spreader 3 and the heat dissipation member 7 deteriorate. Further, when the pressure is high, the movement of the resin within the connecting member 8 is increased. Therefore, voids (bubbles) and cracks occur more frequently in the connection member 8 . Also in this case, the insulation characteristics between the heat spreader 3 and the heat dissipation member 7 are similarly degraded. Furthermore, voids and cracks inside the connecting member 8 can also cause deterioration of the heat dissipation characteristics.

また、規制部材９を配置していない構成において、上記工程（Ｓ３０）における半導体パッケージ２００への圧力が小さい場合、接続部材８と半導体パッケージ２００との接着強度が十分得られない場合がある。この場合、半導体モジュール１００に対する温度サイクル等の信頼性試験において、図９に示すように接続部材８と半導体パッケージ２００との接着界面で剥離が発生する。このような剥離の発生は、やはり絶縁特性や放熱特性の劣化の原因となる。 In addition, in a configuration in which the regulating member 9 is not arranged, if the pressure applied to the semiconductor package 200 in the above step (S30) is small, the bonding strength between the connection member 8 and the semiconductor package 200 may not be sufficiently obtained. In this case, peeling occurs at the adhesive interface between the connection member 8 and the semiconductor package 200 as shown in FIG. Occurrence of such peeling also causes deterioration of insulation characteristics and heat dissipation characteristics.

そこで、上述した本実施の形態に係る半導体モジュールの製造方法では、樹脂流れ出し防止材としての規制部材９を配置する工程（Ｓ２２）を備えることにより、規制部材９の上下面の位置が、接続部材８の上下面と同一高さとならないように規制部材９が配置されている。異なる観点から言えば、規制部材９の側面が接続部材８の側端面と対向するとともに、接続部材８の厚さより規制部材９の厚さが厚くなっている。この結果、接続部材８からの樹脂流れ出し経路を図８および図９に示す構造のように一直線状とならないようにできる。この結果、半導体パッケージ２００と放熱部材７との接続部材８による接合部の強度（接着強度）を十分高めるために必要な圧力を工程（Ｓ３０）において印加しながら、図８に示すような樹脂の流出部３１の発生を防止できる。 Therefore, in the manufacturing method of the semiconductor module according to the present embodiment described above, by including the step (S22) of arranging the regulating member 9 as a resin outflow preventing member, the positions of the upper and lower surfaces of the regulating member 9 are aligned with the connecting member. A regulating member 9 is arranged so as not to have the same height as the upper and lower surfaces of 8 . From a different point of view, the side surface of the regulating member 9 faces the side end surface of the connecting member 8 , and the thickness of the regulating member 9 is greater than the thickness of the connecting member 8 . As a result, it is possible to prevent the resin outflow path from the connecting member 8 from forming a straight line as in the structures shown in FIGS. As a result, while applying a pressure necessary to sufficiently increase the strength (adhesive strength) of the joint portion between the semiconductor package 200 and the heat radiating member 7 by the connecting member 8 in the step (S30), the resin as shown in FIG. The outflow part 31 can be prevented from being generated.

つまり、工程（Ｓ３０）において半導体パッケージ２００に圧力を加えながら接続部材８を加熱したときに、接続部材８内の樹脂成分が接着面外へ流れ出すことを規制部材９により防止できる。特に、接続部材８が、窒化ホウ素のような無機材を圧縮焼成した層に熱硬化性樹脂を含浸させた構成である場合に、図８に示す上記流出部３１の発生を抑制しつつ、半導体パッケージ２００に十分な圧力を印加できる。この結果、半導体パッケージ２００と放熱部材７との接着強度を十分高く保つことができる。したがって、高信頼性で絶縁特性および放熱特性に優れた半導体モジュール１００を得ることができる。 That is, when the connecting member 8 is heated while applying pressure to the semiconductor package 200 in the step (S30), the regulating member 9 can prevent the resin component in the connecting member 8 from flowing out of the bonding surface. In particular, when the connection member 8 has a structure in which a layer obtained by compressing and baking an inorganic material such as boron nitride is impregnated with a thermosetting resin, the generation of the outflow portion 31 shown in FIG. Sufficient pressure can be applied to the package 200 . As a result, the adhesive strength between the semiconductor package 200 and the heat dissipation member 7 can be kept sufficiently high. Therefore, it is possible to obtain the semiconductor module 100 with high reliability and excellent insulation and heat dissipation characteristics.

＜作用効果＞
本開示に従った半導体モジュール１００は、放熱部材７と、半導体パッケージ２００と、接続部材８と、規制部材９とを備える。放熱部材７は主面７ａを有する。半導体パッケージ２００は、主面７ａ上に配置される。半導体パッケージ２００は半導体素子１を含む。接続部材８は、放熱部材７と半導体パッケージ２００との間に位置する。接続部材８は、放熱部材７と半導体パッケージ２００とを接続する。接続部材８は樹脂成分を含む。規制部材９は、接続部材８を囲むように主面７ａ上に配置される。主面７ａに垂直な方向において、規制部材９の頂部９ａの位置は、接続部材８における半導体パッケージ２００側の表面の外周部の位置より主面７ａから離れている。<Effect>
A semiconductor module 100 according to the present disclosure includes a heat dissipation member 7 , a semiconductor package 200 , a connection member 8 and a regulation member 9 . The heat dissipation member 7 has a main surface 7a. The semiconductor package 200 is arranged on the main surface 7a. A semiconductor package 200 includes a semiconductor device 1 . The connection member 8 is positioned between the heat dissipation member 7 and the semiconductor package 200 . The connection member 8 connects the heat dissipation member 7 and the semiconductor package 200 . The connection member 8 contains a resin component. The regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8 . In the direction perpendicular to the main surface 7a, the position of the top portion 9a of the regulating member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connecting member 8 on the semiconductor package 200 side.

このようにすれば、接続部材８の外周を囲む規制部材９の頂部９ａが、接続部材８の上面である表面より高い位置となっているので、接続部材８から樹脂成分が外側へ流出することを規制部材９により防止できる。このため、接続部材８により放熱部材７と半導体パッケージ２００とを接続するため、たとえば半導体パッケージ２００を放熱部材７側に押圧して接続部材８に圧力を加えても、接続部材８の樹脂成分が半導体パッケージ２００の外周端部より外側に流れ出すといった不良の発生を抑制できる。そのため、半導体パッケージ２００と放熱部材７との接続時に、接続部材８に対して十分な圧力を印加できる。この結果、半導体パッケージ２００と放熱部材７との接着強度不足または接続不良、あるいは接続部材８における樹脂成分の流動に伴うボイドの発生といった問題の発生を抑制できる。このため、上記問題に起因する半導体モジュールにおける絶縁特性または放熱特性の劣化を抑制でき、半導体モジュールの信頼性を向上させることができる。 With this configuration, the top portion 9a of the regulating member 9 surrounding the outer periphery of the connecting member 8 is positioned higher than the surface, which is the upper surface of the connecting member 8, so that the resin component does not flow out from the connecting member 8. can be prevented by the regulating member 9. Therefore, since the heat dissipation member 7 and the semiconductor package 200 are connected by the connection member 8 , even if the semiconductor package 200 is pushed toward the heat dissipation member 7 side and pressure is applied to the connection member 8 , the resin component of the connection member 8 is It is possible to suppress the occurrence of defects such as flowing out of the outer peripheral edge of the semiconductor package 200 . Therefore, sufficient pressure can be applied to the connection member 8 when connecting the semiconductor package 200 and the heat dissipation member 7 . As a result, problems such as insufficient bonding strength or poor connection between the semiconductor package 200 and the heat radiating member 7 or voids caused by the flow of the resin component in the connecting member 8 can be suppressed. Therefore, it is possible to suppress the deterioration of the insulation characteristics or the heat dissipation characteristics of the semiconductor module caused by the above problems, and improve the reliability of the semiconductor module.

上記半導体モジュール１００において、主面７ａには、規制部材９下に位置する領域に溝部２１が形成されている。規制部材９の一部は溝部２１の内部に位置する。この場合、溝部２１に規制部材９の一部を配置することで、規制部材９を容易に位置決めできる。 In the semiconductor module 100 described above, a groove portion 21 is formed in a region located below the regulating member 9 on the main surface 7a. A portion of the regulating member 9 is positioned inside the groove portion 21 . In this case, by disposing a portion of the regulating member 9 in the groove portion 21, the regulating member 9 can be easily positioned.

上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含む。この場合、規制部材９と放熱部材７との接続部、あるいは規制部材９と半導体パッケージ２００との接触部に圧力を加えることで、規制部材９と放熱部材７または半導体パッケージ２００とを密着させることができる。この結果、接続部材８の樹脂成分が外部へ流出する経路となり得る規制部材９と放熱部材７との接続界面または規制部材９と半導体パッケージ２００との接触界面における隙間の発生を抑制できる。 In the semiconductor module 100 described above, the material forming the regulating member 9 includes an elastic body. In this case, pressure is applied to the connecting portion between the regulating member 9 and the heat radiating member 7 or the contact portion between the regulating member 9 and the semiconductor package 200 to bring the regulating member 9 and the heat radiating member 7 or the semiconductor package 200 into close contact with each other. can be done. As a result, it is possible to suppress the occurrence of a gap at the connection interface between the regulating member 9 and the heat dissipation member 7 or the contact interface between the regulating member 9 and the semiconductor package 200 , which may serve as a path for the resin component of the connection member 8 to flow out to the outside.

上記半導体モジュール１００において、規制部材９の比誘電率は接続部材８の比誘電率より大きい。この場合、接続部材８と接触する半導体パッケージ２００の部分から発生する部分放電を抑制できる。この結果、半導体モジュール１００の絶縁特性を向上させることができる。 In the semiconductor module 100 described above, the restricting member 9 has a higher dielectric constant than the connecting member 8 . In this case, partial discharge generated from the portion of the semiconductor package 200 in contact with the connection member 8 can be suppressed. As a result, the insulation characteristics of the semiconductor module 100 can be improved.

本開示に従った半導体モジュール１００の製造方法は、放熱部材７を準備する工程（Ｓ１０）と、接続部材８を配置する工程（Ｓ２１）と、規制部材９を配置する工程（Ｓ２２）と、半導体パッケージ２００を配置する工程（Ｓ２３）と、放熱部材７と半導体パッケージ２００とを接続する工程（Ｓ３０）とを備える。放熱部材７は主面７ａを有する。接続部材８を配置する工程（Ｓ２１）では、主面７ａ上に接続部材８が配置される。接続部材８は樹脂成分を含む。規制部材９を配置する工程（Ｓ２２）では、主面７ａ上に、接続部材８を囲むように規制部材９が配置される。半導体パッケージ２００を配置する工程（Ｓ２３）では、接続部材８上に、半導体素子１を含む半導体パッケージ２００が配置される。上記接続する工程（Ｓ３０）では、半導体パッケージ２００を接続部材８側に向けて押圧しながら接続部材８を加熱する。この結果、接続部材８によって放熱部材７と半導体パッケージ２００とが接続される。 The method of manufacturing the semiconductor module 100 according to the present disclosure includes a step of preparing the heat dissipation member 7 (S10), a step of arranging the connecting member 8 (S21), a step of arranging the regulating member 9 (S22), The process includes a step of arranging the package 200 (S23) and a step of connecting the heat dissipation member 7 and the semiconductor package 200 (S30). The heat dissipation member 7 has a main surface 7a. In the step of arranging the connection member 8 (S21), the connection member 8 is arranged on the main surface 7a. The connection member 8 contains a resin component. In the step of arranging the regulation member 9 (S22), the regulation member 9 is arranged so as to surround the connection member 8 on the main surface 7a. In the step of arranging the semiconductor package 200 ( S<b>23 ), the semiconductor package 200 including the semiconductor element 1 is arranged on the connection member 8 . In the connecting step (S30), the connecting member 8 is heated while pressing the semiconductor package 200 toward the connecting member 8 side. As a result, the connection member 8 connects the heat dissipation member 7 and the semiconductor package 200 .

このようにすれば、規制部材９を配置することで、接続する工程（Ｓ３０）において加圧された接続部材８から樹脂成分が外部へ流れ出すことを抑制できる。このため、接続する工程（Ｓ３０）において接続部材８に対して十分な圧力を印加できる。したがって、接続する工程（Ｓ３０）における半導体パッケージ２００と放熱部材７との接着強度不足または接続不良、あるいは接続部材８における樹脂成分の流動に伴うボイドの発生といった問題の発生を抑制できる。この結果、信頼性の高い半導体モジュール１００を得ることができる。 In this way, by arranging the regulating member 9, it is possible to suppress the resin component from flowing out from the connecting member 8 pressurized in the connecting step (S30). Therefore, sufficient pressure can be applied to the connecting member 8 in the connecting step (S30). Therefore, problems such as insufficient bonding strength or poor connection between the semiconductor package 200 and the heat radiating member 7 in the step of connecting (S30), or the generation of voids due to the flow of the resin component in the connecting member 8 can be suppressed. As a result, a highly reliable semiconductor module 100 can be obtained.

上記半導体モジュール１００の製造方法において、規制部材９を配置する工程（Ｓ２２）は、主面７ａ上に規制部材９となるべき液体を配置する工程（Ｓ２２１）と、当該液体を固化することにより規制部材９を形成する工程（Ｓ２２２）とを含む。 In the method of manufacturing the semiconductor module 100 described above, the step of arranging the regulating member 9 (S22) consists of a step of arranging a liquid to be the regulating member 9 on the main surface 7a (S221) and a step of solidifying the liquid to regulate the liquid. and a step of forming the member 9 (S222).

この場合、規制部材９は放熱部材７の主面７ａに密着した状態で形成される。したがって、放熱部材７と規制部材９との接触界面における隙間の発生を防止できるので、当該隙間を介した接続部材８の樹脂成分の外部への流出を防止できる。 In this case, the regulating member 9 is formed in close contact with the main surface 7a of the heat radiating member 7. As shown in FIG. Therefore, it is possible to prevent the occurrence of a gap at the contact interface between the heat radiating member 7 and the regulating member 9, thereby preventing the resin component of the connecting member 8 from flowing out to the outside through the gap.

実施の形態２．
＜半導体モジュールの構成＞
図１０は、実施の形態２に係る半導体モジュールを示す断面模式図である。図１１は、図１０の領域ＸＩを示す拡大断面模式図である。図１０および図１１に示した半導体モジュール１００は、基本的には図１から図３に示した半導体モジュール１００と同様の構成を備えるが、半導体パッケージ２００の構成が図１から図３に示した半導体モジュール１００と異なる。すなわち、図１０および図１１に示した半導体モジュール１００では、半導体パッケージ２００の封止樹脂４の外周部に、規制部材９の頂部９ａと接触する押圧部２２が形成されている。押圧部２２は封止樹脂４の一部である。押圧部２２は封止樹脂４の外周部に形成されたツバ状の部分である。Embodiment 2.
<Configuration of semiconductor module>
FIG. 10 is a schematic cross-sectional view showing a semiconductor module according to the second embodiment. FIG. 11 is an enlarged schematic cross-sectional view showing region XI in FIG. The semiconductor module 100 shown in FIGS. 10 and 11 basically has the same configuration as the semiconductor module 100 shown in FIGS. It differs from the semiconductor module 100 . That is, in the semiconductor module 100 shown in FIGS. 10 and 11, the pressing portion 22 that contacts the top portion 9a of the regulating member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200. As shown in FIG. The pressing portion 22 is part of the sealing resin 4 . The pressing portion 22 is a brim-shaped portion formed on the outer peripheral portion of the sealing resin 4 .

このように半導体パッケージ２００に押圧部２２が形成されているので、図５の接続工程（Ｓ３０）において、半導体パッケージ２００が接続部材８を介して放熱部材７に圧着される時に、押圧部２２が規制部材９の頂部９ａを押圧する。この結果、規制部材９と、放熱部材７および半導体パッケージ２００との密着性をより向上させることができる。このため、接続部材８からの樹脂成分の流れ出し経路である規制部材９と放熱部材７との間の隙間、または規制部材９と半導体パッケージ２００との間の隙間を小さくできる。したがって、実施の形態１に係る半導体モジュール１００よりも更に安定して接続部材８からの樹脂の流れ出しを防止できる。 Since the pressing portion 22 is formed in the semiconductor package 200 in this manner, the pressing portion 22 is pressed when the semiconductor package 200 is press-bonded to the heat dissipation member 7 via the connection member 8 in the connecting step (S30) of FIG. The top portion 9a of the regulating member 9 is pressed. As a result, the adhesion between the regulation member 9 and the heat dissipation member 7 and the semiconductor package 200 can be further improved. Therefore, the gap between the regulating member 9 and the heat radiation member 7, which is the flow path of the resin component from the connecting member 8, or the gap between the regulating member 9 and the semiconductor package 200 can be reduced. Therefore, the outflow of the resin from the connection member 8 can be prevented more stably than in the semiconductor module 100 according to the first embodiment.

特に規制部材９が、シリコーンゴムのような弾性体により構成される場合、図５に示した工程（Ｓ３０）において、押圧部２２により規制部材９の頂部９ａを押圧できるので、規制部材９が圧縮変形しながら溝部２１に圧入される。この結果、樹脂流れ出し経路となる上記隙間を完全に埋めることができる。 Especially when the regulating member 9 is made of an elastic material such as silicone rubber, in the step (S30) shown in FIG. It is press-fitted into the groove portion 21 while being deformed. As a result, it is possible to completely fill the above-mentioned gap, which will be the resin outflow path.

＜作用効果＞
上記半導体モジュール１００において、半導体パッケージ２００は、規制部材９の頂部９ａに接触する押圧部２２を含む。この場合、半導体パッケージ２００の押圧部２２により規制部材９の頂部９ａを押圧することで、規制部材９と半導体パッケージ２００との接触界面および規制部材９と放熱部材７との接触界面における隙間の発生を抑制できる。この結果、上記接触界面の隙間を介した接続部材８の樹脂成分の外部への流出を抑制できる。<Effect>
In the semiconductor module 100 described above, the semiconductor package 200 includes a pressing portion 22 that contacts the top portion 9 a of the regulating member 9 . In this case, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and at the contact interface between the regulating member 9 and the heat dissipation member 7. can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed.

上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含むことが好ましい。この場合、上述した押圧部２２により規制部材９と放熱部材７との接続部、あるいは規制部材９と半導体パッケージ２００との接触部に圧力を加えることができる。この結果、規制部材９と放熱部材７または半導体パッケージ２００とを密着させることができる。したがって、接続部材８の樹脂成分が外部へ流出する経路となり得る規制部材９と放熱部材７との接続界面または規制部材９と半導体パッケージ２００との接触界面における隙間の発生を抑制でき、接続部材８から樹脂成分が外部へ流出することを抑制できる。 In the semiconductor module 100 described above, the material forming the regulating member 9 preferably contains an elastic body. In this case, pressure can be applied to the connecting portion between the regulating member 9 and the heat radiating member 7 or the contact portion between the regulating member 9 and the semiconductor package 200 by the pressing portion 22 described above. As a result, the regulation member 9 and the heat dissipation member 7 or the semiconductor package 200 can be brought into close contact. Therefore, it is possible to suppress the occurrence of a gap at the connection interface between the regulation member 9 and the heat dissipation member 7 or the contact interface between the regulation member 9 and the semiconductor package 200, which may become a path for the resin component of the connection member 8 to flow out to the outside. It is possible to suppress the outflow of the resin component from.

実施の形態３．
＜半導体モジュールの構成＞
図１２は、実施の形態３に係る半導体モジュールを示す断面模式図である。図１２に示した半導体モジュール１００は、基本的には図１０に示した半導体モジュール１００と同様の構成を備えるが、放熱部材７の構成が図１０に示した半導体モジュール１００と異なる。すなわち、図１２に示した半導体モジュール１００では、放熱部材７の主面７ａが、接続部材８下に位置する凸部状の部分である第１領域２５と、第１領域２５を囲むように配置され、表面が第１領域２５より下側に位置する第２領域２３とを含む。規制部材９は第１領域２５の外周を囲むように配置されている。第１領域２５と第２領域２３との間の段差部に規制部材９は接触している。Embodiment 3.
<Configuration of semiconductor module>
FIG. 12 is a schematic cross-sectional view showing a semiconductor module according to the third embodiment. The semiconductor module 100 shown in FIG. 12 basically has the same configuration as the semiconductor module 100 shown in FIG. 10, but the configuration of the heat dissipation member 7 differs from the semiconductor module 100 shown in FIG. That is, in the semiconductor module 100 shown in FIG. 12, the main surface 7a of the heat dissipation member 7 is arranged so as to surround the first region 25, which is a convex portion located below the connection member 8, and the first region 25. and a second region 23 whose surface is located below the first region 25 . The regulating member 9 is arranged so as to surround the outer circumference of the first region 25 . The regulating member 9 is in contact with the stepped portion between the first region 25 and the second region 23 .

このような構成では、放熱部材７の主面７ａ上に規制部材９を設置する工程を容易に実施できる。特に規制部材９がシリコーンゴムのような弾性体で構成される場合に有利である。すなわち、半導体パッケージ２００が大きく、規制部材９のサイズも大きくなった場合、実施の形態２に係る半導体モジュール１００のように溝部２１へ規制部材９を設置する工程の作業性が悪くなる。これは、弾性体から構成される規制部材９が変形しやすく、短時間で溝部２１に規制部材９を配置することが難しいためである。一方、上記のような放熱部材７の構成とすることで、規制部材９を凸部である第１領域２５の外周部である段差部に沿って配置することができるので、規制部材９を配置する工程（Ｓ２２）の作業性を向上させることができる。 With such a configuration, the step of installing the regulating member 9 on the main surface 7a of the heat radiating member 7 can be easily carried out. This is particularly advantageous when the regulating member 9 is made of an elastic material such as silicone rubber. That is, when the semiconductor package 200 is large and the size of the regulation member 9 is also large, the workability of the step of installing the regulation member 9 in the groove portion 21 as in the semiconductor module 100 according to the second embodiment is deteriorated. This is because the regulating member 9 made of an elastic material is easily deformed, and it is difficult to dispose the regulating member 9 in the groove 21 in a short period of time. On the other hand, by configuring the heat radiating member 7 as described above, the regulating member 9 can be arranged along the stepped portion that is the outer peripheral portion of the first region 25 that is the convex portion. It is possible to improve the workability of the step (S22).

＜作用効果＞
上記半導体モジュール１００において、主面７ａには、接続部材８の下に位置する第１領域２５が、当該第１領域２５の外側の第２領域２３より半導体パッケージ２００側に突出した凸部となっている。この場合、凸部である第１領域２５の外周側面に接するように規制部材９を配置することで、規制部材９の位置決めを容易に行うことができる。<Effect>
In the semiconductor module 100, the main surface 7a has a first region 25 located under the connection member 8, which is a projection protruding toward the semiconductor package 200 from the second region 23 outside the first region 25. ing. In this case, the regulation member 9 can be easily positioned by arranging the regulation member 9 so as to be in contact with the outer peripheral side surface of the first region 25 which is a convex portion.

上記半導体モジュール１００において、半導体パッケージ２００は、規制部材９の頂部９ａに接触する押圧部２２を含む。この場合、上述した実施の形態２に係る半導体モジュール１００と同様の効果を得ることができる。すなわち、半導体パッケージ２００の押圧部２２により規制部材９の頂部９ａを押圧することで、規制部材９と半導体パッケージ２００との接触界面および規制部材９と放熱部材７との接触界面における隙間の発生を抑制できる。この結果、上記接触界面の隙間を介した接続部材８の樹脂成分の外部への流出を抑制できる。上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含むことが好ましい。 In the semiconductor module 100 described above, the semiconductor package 200 includes a pressing portion 22 that contacts the top portion 9 a of the regulating member 9 . In this case, the same effects as those of the semiconductor module 100 according to the second embodiment can be obtained. That is, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, generation of gaps at the contact interface between the regulating member 9 and the semiconductor package 200 and at the contact interface between the regulating member 9 and the heat dissipation member 7 can be prevented. can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed. In the semiconductor module 100 described above, the material forming the regulating member 9 preferably contains an elastic body.

実施の形態４．
＜半導体モジュールの構成＞
図１３は、実施の形態４に係る半導体モジュールを示す断面模式図である。図１３に示した半導体モジュール１００は、基本的には図１から図３に示した半導体モジュール１００と同様の構成を備えるが、放熱部材７の構成が図１から図３に示した半導体モジュール１００と異なる。すなわち、図１３に示した半導体モジュール１００では、放熱部材７の主面７ａにおいて、接続部材８の厚み以上、規制部材９の厚み以下の深さを有する凹部２４を形成している。凹部２４の外周部に規制部材９が配置されている。凹部２４の内部であって規制部材９の内周側に接続部材８が配置されている。Embodiment 4.
<Configuration of semiconductor module>
FIG. 13 is a schematic cross-sectional view showing a semiconductor module according to the fourth embodiment. The semiconductor module 100 shown in FIG. 13 basically has the same configuration as the semiconductor module 100 shown in FIGS. different from That is, in the semiconductor module 100 shown in FIG. 13, the concave portion 24 having a depth equal to or greater than the thickness of the connection member 8 and equal to or less than the thickness of the regulating member 9 is formed on the main surface 7a of the heat dissipation member 7 . A regulating member 9 is arranged on the outer periphery of the recess 24 . The connecting member 8 is arranged inside the recess 24 and on the inner peripheral side of the restricting member 9 .

図１３に示した半導体モジュール１００では、放熱部材７と接する規制部材９の下面が、接続部材８の下面（下接着界面）と同一高さの延長線上にある。しかし、接続部材８の樹脂成分が規制部材９の下面側から染み出し、規制部材９の外側へ流れ出したとしても、当該規制部材９の外周側には凹部２４の側壁が存在する。このため、接続部材８からの樹脂成分の流れ出しを最小限に抑えることができる。また、図１２に示した半導体モジュール１００と同様に、図６に示した工程（Ｓ２２）において、規制部材９を放熱部材７の主面７ａ上に配置するときに、凹部２４の外周部に規制部材９を配置すればよいため、当該工程（Ｓ２２）の作業性を向上させることができる。 In the semiconductor module 100 shown in FIG. 13, the lower surface of the regulating member 9 in contact with the heat radiating member 7 is on the extension line of the same height as the lower surface (lower adhesive interface) of the connecting member 8 . However, even if the resin component of the connecting member 8 seeps out from the lower surface side of the regulating member 9 and flows out of the regulating member 9 , the sidewall of the recess 24 exists on the outer peripheral side of the regulating member 9 . Therefore, the outflow of the resin component from the connecting member 8 can be minimized. 12, in the step (S22) shown in FIG. 6, when the regulating member 9 is arranged on the main surface 7a of the heat radiating member 7, the outer peripheral portion of the concave portion 24 is regulated. Since it is only necessary to dispose the member 9, the workability of the step (S22) can be improved.

＜作用効果＞
上記半導体モジュール１００において、主面７ａには、規制部材９および接続部材８の下に位置する領域に凹部２４が形成されている。規制部材９の一部および接続部材８は凹部２４の内部に位置する。この場合、接続部材８の樹脂成分が規制部材９側に流出しようとして規制部材９に外側に向けた圧力が加えられた場合に、凹部２４の側壁により規制部材９を外周側から支えることができる。このため、規制部材９が上記圧力により変形して樹脂成分が規制部材９の外側へ流れる経路が形成される、といった問題の発生を抑制できる。また、凹部２４の側壁に規制部材９を配置すればよいため、規制部材９を放熱部材７の主面７ａ上に配置する工程（Ｓ２２）の作業性を向上させることができる。<Effect>
In the semiconductor module 100 described above, a concave portion 24 is formed in a region located below the regulating member 9 and the connecting member 8 on the main surface 7a. A portion of the restricting member 9 and the connecting member 8 are positioned inside the recess 24 . In this case, when the resin component of the connecting member 8 flows out to the side of the regulating member 9 and pressure is applied to the regulating member 9 toward the outside, the sidewall of the recess 24 can support the regulating member 9 from the outer peripheral side. . Therefore, it is possible to suppress the occurrence of the problem that the regulation member 9 is deformed by the pressure and a path is formed through which the resin component flows to the outside of the regulation member 9 . Moreover, since the restricting member 9 may be placed on the side wall of the recess 24, the workability of the step (S22) of placing the restricting member 9 on the main surface 7a of the heat radiating member 7 can be improved.

実施の形態５．
＜半導体モジュールの構成＞
図１４は、実施の形態５に係る半導体モジュールを示す断面模式図である。図１４に示した半導体モジュール１００は、基本的には図１３に示した半導体モジュール１００と同様の構成を備えるが、半導体パッケージ２００の構成が図１３に示した半導体モジュール１００と異なる。すなわち、図１４に示した半導体モジュール１００では、実施の形態２に係る半導体モジュール１００と同様に、半導体パッケージ２００の封止樹脂４の外周部に、規制部材９の頂部９ａと接触する押圧部２２が形成されている。Embodiment 5.
<Configuration of semiconductor module>
FIG. 14 is a schematic cross-sectional view showing a semiconductor module according to the fifth embodiment. The semiconductor module 100 shown in FIG. 14 basically has the same configuration as the semiconductor module 100 shown in FIG. 13, but the configuration of the semiconductor package 200 is different from the semiconductor module 100 shown in FIG. That is, in the semiconductor module 100 shown in FIG. 14, as in the semiconductor module 100 according to the second embodiment, the pressing portion 22 that contacts the top portion 9a of the regulating member 9 is provided on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200. is formed.

＜作用効果＞
上記半導体モジュール１００は、実施の形態４に係る半導体モジュール１００と同様に放熱部材７の主面７ａに凹部２４が形成されているので、実施の形態４に係る半導体モジュール１００と同様の効果を得ることができる。さらに、上記半導体モジュール１００において、半導体パッケージ２００は、規制部材９の頂部９ａに接触する押圧部２２を含む。このため、上述した実施の形態２に係る半導体モジュール１００と同様の効果を得ることができる。すなわち、半導体パッケージ２００の押圧部２２により規制部材９の頂部９ａを押圧することで、規制部材９と半導体パッケージ２００との接触界面および規制部材９と放熱部材７との接触界面における隙間の発生を抑制できる。この結果、上記接触界面の隙間を介した接続部材８の樹脂成分の外部への流出を抑制できる。上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含むことが好ましい。<Effect>
Since the semiconductor module 100 has the concave portion 24 formed in the main surface 7a of the heat dissipation member 7 in the same manner as the semiconductor module 100 according to the fourth embodiment, the same effect as the semiconductor module 100 according to the fourth embodiment can be obtained. be able to. Further, in the semiconductor module 100 described above, the semiconductor package 200 includes the pressing portion 22 that contacts the top portion 9 a of the regulating member 9 . Therefore, the same effects as those of the semiconductor module 100 according to the second embodiment described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, generation of gaps at the contact interface between the regulating member 9 and the semiconductor package 200 and at the contact interface between the regulating member 9 and the heat dissipation member 7 can be prevented. can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed. In the semiconductor module 100 described above, the material forming the regulating member 9 preferably contains an elastic body.

実施の形態６．
本実施の形態は、上述した実施の形態１から実施の形態５に係る半導体モジュールを電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態６として、三相のインバータに本発明を適用した場合について説明する。Embodiment 6.
The present embodiment applies the semiconductor modules according to the first to fifth embodiments described above to a power converter. Although the present invention is not limited to a specific power converter, a case where the present invention is applied to a three-phase inverter will be described below as a sixth embodiment.

図１５は、本実施の形態にかかる電力変換装置を適用した電力変換システムの構成を示すブロック図である。 FIG. 15 is a block diagram showing the configuration of a power conversion system to which the power conversion device according to this embodiment is applied.

図１５に示す電力変換システムは、電源３００、電力変換装置４００、負荷５００から構成される。電源３００は、直流電源であり、電力変換装置４００に直流電力を供給する。電源３００は種々のもので構成することが可能であり、例えば、直流系統、太陽電池、蓄電池で構成することができるし、交流系統に接続された整流回路やＡＣ／ＤＣコンバータで構成することとしてもよい。また、電源３００を、直流系統から出力される直流電力を所定の電力に変換するＤＣ／ＤＣコンバータによって構成することとしてもよい。 The power conversion system shown in FIG. 15 includes a power supply 300, a power conversion device 400, and a load 500. The power supply 300 is a DC power supply and supplies DC power to the power converter 400 . The power supply 300 can be composed of various things, for example, it can be composed of a DC system, a solar battery, a storage battery, or it can be composed of a rectifier circuit or an AC/DC converter connected to an AC system. good too. Further, power supply 300 may be configured by a DC/DC converter that converts DC power output from a DC system into predetermined power.

電力変換装置４００は、電源３００と負荷５００の間に接続された三相のインバータであり、電源３００から供給された直流電力を交流電力に変換し、負荷５００に交流電力を供給する。電力変換装置４００は、図１５に示すように、直流電力を交流電力に変換して出力する主変換回路４０１と、主変換回路４０１を制御する制御信号を主変換回路４０１に出力する制御回路４０３とを備えている。 Power conversion device 400 is a three-phase inverter connected between power supply 300 and load 500 , converts DC power supplied from power supply 300 into AC power, and supplies AC power to load 500 . As shown in FIG. 15, the power conversion device 400 includes a main conversion circuit 401 that converts DC power into AC power and outputs it, and a control circuit 403 that outputs a control signal for controlling the main conversion circuit 401 to the main conversion circuit 401. and

負荷５００は、電力変換装置４００から供給された交流電力によって駆動される三相の電動機である。なお、負荷５００は特定の用途に限られるものではなく、各種電気機器に搭載された電動機であり、例えば、ハイブリッド自動車や電気自動車、鉄道車両、エレベーター、もしくは、空調機器向けの電動機として用いられる。 The load 500 is a three-phase electric motor driven by AC power supplied from the power converter 400 . It should be noted that the load 500 is not limited to a specific application, but is a motor mounted on various electrical devices, such as a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or a motor for air conditioners.

以下、電力変換装置４００の詳細を説明する。主変換回路４０１は、スイッチング素子と還流ダイオードを備えており（図示せず）、スイッチング素子がスイッチングすることによって、電源３００から供給される直流電力を交流電力に変換し、負荷５００に供給する。主変換回路４０１の具体的な回路構成は種々のものがあるが、本実施の形態にかかる主変換回路４０１は２レベルの三相フルブリッジ回路であり、６つのスイッチング素子とそれぞれのスイッチング素子に逆並列された６つの還流ダイオードから構成することができる。主変換回路４０１の各スイッチング素子や各還流ダイオードは、上述した実施の形態１から実施の形態５のいずれかに相当する半導体モジュール４０２によって構成する。６つのスイッチング素子は２つのスイッチング素子ごとに直列接続され上下アームを構成し、各上下アームはフルブリッジ回路の各相（Ｕ相、Ｖ相、Ｗ相）を構成する。そして、各上下アームの出力端子、すなわち主変換回路４０１の３つの出力端子は、負荷５００に接続される。 Details of the power converter 400 will be described below. The main converter circuit 401 includes a switching element and a freewheeling diode (not shown). By switching the switching element, the DC power supplied from the power supply 300 is converted into AC power and supplied to the load 500 . Although there are various specific circuit configurations of the main conversion circuit 401, the main conversion circuit 401 according to the present embodiment is a two-level three-phase full bridge circuit, with six switching elements and It can consist of six freewheeling diodes in anti-parallel. Each switching element and each free wheel diode of the main conversion circuit 401 is configured by a semiconductor module 402 corresponding to any one of the first to fifth embodiments described above. Six switching elements are connected in series every two switching elements to form upper and lower arms, and each upper and lower arm forms each phase (U phase, V phase, W phase) of the full bridge circuit. Output terminals of the upper and lower arms, that is, three output terminals of the main conversion circuit 401 are connected to the load 500 .

また、主変換回路４０１は、各スイッチング素子を駆動する駆動回路（図示なし）を備えているが、駆動回路は半導体モジュール４０２に内蔵されていてもよいし、半導体モジュール４０２とは別に駆動回路を備える構成であってもよい。駆動回路は、主変換回路４０１のスイッチング素子を駆動する駆動信号を生成し、主変換回路４０１のスイッチング素子の制御電極に供給する。具体的には、後述する制御回路４０３からの制御信号に従い、スイッチング素子をオン状態にする駆動信号とスイッチング素子をオフ状態にする駆動信号とを各スイッチング素子の制御電極に出力する。スイッチング素子をオン状態に維持する場合、駆動信号はスイッチング素子の閾値電圧以上の電圧信号（オン信号）であり、スイッチング素子をオフ状態に維持する場合、駆動信号はスイッチング素子の閾値電圧以下の電圧信号（オフ信号）となる。 Further, the main conversion circuit 401 includes a drive circuit (not shown) for driving each switching element. It may be a configuration provided. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 401 and supplies it to the control electrode of the switching element of the main conversion circuit 401 . Specifically, in accordance with a control signal from the control circuit 403, which will be described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element. When maintaining the switching element in the ON state, the driving signal is a voltage signal (ON signal) equal to or higher than the threshold voltage of the switching element, and when maintaining the switching element in the OFF state, the driving signal is a voltage equal to or less than the threshold voltage of the switching element. signal (off signal).

制御回路４０３は、負荷５００に所望の電力が供給されるよう主変換回路４０１のスイッチング素子を制御する。具体的には、負荷５００に供給すべき電力に基づいて主変換回路４０１の各スイッチング素子がオン状態となるべき時間（オン時間）を算出する。例えば、出力すべき電圧に応じてスイッチング素子のオン時間を変調するＰＷＭ制御によって主変換回路４０１を制御することができる。そして、各時点においてオン状態となるべきスイッチング素子にはオン信号を、オフ状態となるべきスイッチング素子にはオフ信号が出力されるよう、主変換回路４０１が備える駆動回路に制御指令（制御信号）を出力する。駆動回路は、この制御信号に従い、各スイッチング素子の制御電極にオン信号又はオフ信号を駆動信号として出力する。 The control circuit 403 controls the switching elements of the main conversion circuit 401 so that the desired power is supplied to the load 500 . Specifically, based on the power to be supplied to the load 500, the time (on time) during which each switching element of the main conversion circuit 401 should be in the ON state is calculated. For example, the main conversion circuit 401 can be controlled by PWM control that modulates the ON time of the switching element according to the voltage to be output. Then, a control command (control signal) to the drive circuit provided in the main conversion circuit 401 so that an ON signal is output to the switching element that should be in the ON state at each time point, and an OFF signal is output to the switching element that should be in the OFF state. to output The drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element according to this control signal.

本実施の形態に係る電力変換装置では、主変換回路４０１のスイッチング素子と還流ダイオードとして実施の形態１から実施の形態５のいずれかにかかる半導体モジュールを適用するため、信頼性の高い電力変換装置を実現することができる。 In the power converter according to the present embodiment, the semiconductor module according to any one of the first to fifth embodiments is applied as the switching element and the freewheeling diode of the main converter circuit 401, so that the power converter with high reliability can be realized.

本実施の形態では、２レベルの三相インバータに本発明を適用する例を説明したが、本発明は、これに限られるものではなく、種々の電力変換装置に適用することができる。本実施の形態では、２レベルの電力変換装置としたが３レベルやマルチレベルの電力変換装置であっても構わないし、単相負荷に電力を供給する場合には単相のインバータに本発明を適用しても構わない。また、直流負荷等に電力を供給する場合にはＤＣ／ＤＣコンバータやＡＣ／ＤＣコンバータに本発明を適用することも可能である。 In this embodiment, an example in which the present invention is applied to a two-level three-phase inverter has been described, but the present invention is not limited to this, and can be applied to various power converters. In this embodiment, a two-level power converter is used, but a three-level or multi-level power converter may be used. You can apply it. Moreover, when power is supplied to a DC load or the like, the present invention can be applied to a DC/DC converter or an AC/DC converter.

また、本発明を適用した電力変換装置は、上述した負荷が電動機の場合に限定されるものではなく、例えば、放電加工機やレーザー加工機、又は誘導加熱調理器や非接触器給電システムの電源装置として用いることもでき、さらには太陽光発電システムや蓄電システム等のパワーコンディショナーとして用いることも可能である。 Further, the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor. It can also be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, an electric storage system, or the like.

今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。矛盾のない限り、今回開示された実施の形態の少なくとも２つを組み合わせてもよい。本発明の範囲は、上記した説明ではなく請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることを意図される。 It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. As long as there is no contradiction, at least two of the embodiments disclosed this time may be combined. The scope of the present invention is indicated by the scope of the claims rather than the above description, and is intended to include all changes within the scope and meaning equivalent to the scope of the claims.

１ 半導体素子、２ はんだ、３ ヒートスプレッダ、４ 封止樹脂、５ リードフレーム、６ ボンディングワイヤ、７ 放熱部材、７ａ 主面、８ 接続部材、９ 規制部材、９ａ 頂部、２１ 溝部、２２ 押圧部、２３ 第２領域、２４ 凹部、２５ 第１領域、３１ 流出部、４１ 接着部材、１００，４０２ 半導体モジュール、２００ 半導体パッケージ、３００ 電源、４００ 電力変換装置、４０１ 主変換回路、４０３ 制御回路、５００ 負荷。 REFERENCE SIGNS LIST 1 semiconductor element 2 solder 3 heat spreader 4 sealing resin 5 lead frame 6 bonding wire 7 heat dissipation member 7a main surface 8 connection member 9 regulation member 9a top 21 groove 22 pressing portion 23 2nd area|region 24 recessed part 25 1st area|region 31 outflow part 41 adhesive member 100,402 semiconductor module 200 semiconductor package 300 power supply 400 power converter device 401 main conversion circuit 403 control circuit 500 load.

Claims (9)

主面を有する放熱部材と、
前記主面上に配置され、半導体素子を含む半導体パッケージと、
前記放熱部材と前記半導体パッケージとの間に位置するとともに、前記放熱部材と前記半導体パッケージとを接続し、樹脂成分を含む接続部材と、
前記接続部材を囲むように前記主面上に配置された規制部材とを備え、
前記主面に垂直な方向において、前記規制部材の頂部の位置は、前記接続部材における前記半導体パッケージ側の表面の外周部の位置より前記主面から離れており、
前記半導体パッケージは、前記規制部材の前記頂部に接触する押圧部を含む、半導体モジュール。 a heat dissipation member having a main surface;
a semiconductor package disposed on the main surface and including a semiconductor element;
a connection member positioned between the heat dissipation member and the semiconductor package, connecting the heat dissipation member and the semiconductor package, and containing a resin component;
a regulating member arranged on the main surface so as to surround the connecting member;
In a direction perpendicular to the main surface, the position of the top of the restricting member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side ,
A semiconductor module , wherein the semiconductor package includes a pressing portion that contacts the top portion of the regulating member . 主面を有する放熱部材と、a heat dissipation member having a main surface;
前記主面上に配置され、半導体素子を含む半導体パッケージと、a semiconductor package disposed on the main surface and including a semiconductor element;
前記放熱部材と前記半導体パッケージとの間に位置するとともに、前記放熱部材と前記半導体パッケージとを接続し、樹脂成分を含む接続部材と、a connection member positioned between the heat dissipation member and the semiconductor package, connecting the heat dissipation member and the semiconductor package, and containing a resin component;
前記接続部材を囲むように前記主面上に配置された規制部材とを備え、a regulating member arranged on the main surface so as to surround the connecting member;
前記主面に垂直な方向において、前記規制部材の頂部の位置は、前記接続部材における前記半導体パッケージ側の表面の外周部の位置より前記主面から離れており、In a direction perpendicular to the main surface, the position of the top of the restricting member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side,
前記主面には、前記規制部材および前記接続部材の下に位置する領域に凹部が形成され、a concave portion is formed in a region of the main surface located below the restricting member and the connecting member;
前記規制部材の一部および前記接続部材は前記凹部の内部に位置する、半導体モジュール。A semiconductor module, wherein a portion of the regulating member and the connecting member are positioned inside the recess. 前記主面には、前記規制部材下に位置する領域に溝部が形成され、A groove portion is formed in a region located below the regulating member on the main surface,
前記規制部材の一部は前記溝部の内部に位置する、請求項１に記載の半導体モジュール。2. The semiconductor module according to claim 1, wherein a portion of said restricting member is located inside said groove. 前記半導体パッケージは、前記規制部材の前記頂部に接触する押圧部を含む、請求項２に記載の半導体モジュール。 3. The semiconductor module according to claim 2 , wherein said semiconductor package includes a pressing portion that contacts said top portion of said regulating member. 前記規制部材を構成する材料は弾性体を含む、請求項１から請求項４のいずれか１項に記載の半導体モジュール。 5. The semiconductor module according to claim 1, wherein a material forming said restricting member includes an elastic body. 前記規制部材の比誘電率は前記接続部材の比誘電率より大きい、請求項１から請求項５のいずれか１項に記載の半導体モジュール。 6. The semiconductor module according to any one of claims 1 to 5, wherein the restricting member has a higher relative dielectric constant than the connecting member. 請求項１から請求項６のいずれか１項に記載の半導体モジュールを有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。 A main conversion circuit having the semiconductor module according to any one of claims 1 to 6 and converting input power and outputting the converted power;
a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit;
A power converter with 主面を有する放熱部材を準備する工程と、
前記主面上に、樹脂成分を含む接続部材を配置する工程と、
前記主面上に、前記接続部材を囲むように規制部材を配置する工程と、
前記接続部材上に、半導体素子を含む半導体パッケージを配置する工程と、
前記半導体パッケージを前記接続部材側に向けて押圧しながら前記接続部材を加熱することにより、前記接続部材によって前記放熱部材と前記半導体パッケージとを接続する工程と、を備える半導体モジュールの製造方法。 preparing a heat dissipating member having a main surface;
arranging a connection member containing a resin component on the main surface;
arranging a regulating member on the main surface so as to surround the connecting member;
arranging a semiconductor package including a semiconductor element on the connection member;
and connecting the heat radiating member and the semiconductor package by the connecting member by heating the connecting member while pressing the semiconductor package toward the connecting member. 前記規制部材を配置する工程は、
前記主面上に前記規制部材となるべき液体を配置する工程と、
前記液体を固化することにより前記規制部材を形成する工程とを含む、請求項８に記載の半導体モジュールの製造方法。 The step of arranging the regulating member includes:
arranging the liquid to be the regulating member on the main surface;
9. The method of manufacturing a semiconductor module according to claim 8, further comprising the step of forming said restricting member by solidifying said liquid.
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