WO2020240699A1 - Semiconductor module, method for manufacturing semiconductor module, and power conversion apparatus - Google Patents

Semiconductor module, method for manufacturing semiconductor module, and power conversion apparatus Download PDF

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Publication number
WO2020240699A1
WO2020240699A1 PCT/JP2019/021109 JP2019021109W WO2020240699A1 WO 2020240699 A1 WO2020240699 A1 WO 2020240699A1 JP 2019021109 W JP2019021109 W JP 2019021109W WO 2020240699 A1 WO2020240699 A1 WO 2020240699A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor module
semiconductor
connecting member
semiconductor package
main surface
Prior art date
Application number
PCT/JP2019/021109
Other languages
French (fr)
Japanese (ja)
Inventor
耕三 原田
塩田　裕基
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2021521626A priority Critical patent/JP7134345B2/en
Priority to CN201980096496.8A priority patent/CN113841235B/en
Priority to PCT/JP2019/021109 priority patent/WO2020240699A1/en
Publication of WO2020240699A1 publication Critical patent/WO2020240699A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a semiconductor module, a method for manufacturing a semiconductor module, and a power conversion device.
  • a semiconductor module in which a semiconductor package including a semiconductor element is connected to a heat radiating member such as a heat sink by a connecting member such as a resin insulating layer and a power conversion device using the semiconductor module are known (for example, Japanese Patent Application Laid-Open No. (See 2013-110181).
  • a resin thickness regulating member surrounding the outer periphery of the resin insulating layer is arranged between the semiconductor package and the heat radiating member.
  • the positions of the upper surface and the lower surface of the resin thickness regulating member are the same as the positions of the upper surface and the lower surface of the resin insulating layer. That is, the first connection interface between the upper surface of the resin thickness regulating member and the lower surface of the semiconductor package and the connection interface between the resin insulating layer and the semiconductor package are located on the same plane. Further, the second connection interface between the lower surface of the resin thickness regulating member and the upper surface of the heat radiating member and the connecting interface between the resin insulating layer and the heat radiating member are located on the same plane.
  • the resin insulating layer is heated while being pressurized. At this time, the resin component of the resin insulating layer may flow out to the outer peripheral side of the semiconductor package through the first connection interface or the second connection interface of the resin thickness regulating member.
  • voids and cracks may occur in the resin insulating layer due to the large movement of the resin component in the resin insulating layer as the connecting member.
  • the occurrence of voids and cracks in such a connecting member lowers the insulation and heat dissipation of the semiconductor module, and as a result, causes the reliability of the semiconductor module to deteriorate.
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide a highly reliable semiconductor module and a power conversion device using the semiconductor module.
  • the semiconductor module according to the present disclosure includes a heat radiating member, a semiconductor package, a connecting member, and a regulating member.
  • the heat radiating member has a main surface.
  • the semiconductor package is arranged on the main surface.
  • the semiconductor package includes a semiconductor element.
  • the connecting member is located between the heat radiating member and the semiconductor package.
  • the connecting member connects the heat radiating member and the semiconductor package.
  • the connecting member contains a resin component.
  • the regulating member is arranged on the main surface so as to surround the connecting member. In the direction perpendicular to the main surface, the position of the top of the regulating member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side.
  • the power conversion device includes a main conversion circuit and a control circuit.
  • the main conversion circuit has the above-mentioned semiconductor module, converts the input power, and outputs it.
  • the control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
  • the method for manufacturing a semiconductor module includes a step of preparing a heat radiating member, a step of arranging a connecting member, a step of arranging a regulating member, a step of arranging a semiconductor package, and a step of arranging the heat radiating member and the semiconductor package. It is provided with a process of connecting.
  • the heat radiating member has a main surface.
  • the connecting member is arranged on the main surface.
  • the connecting member contains a resin component.
  • the regulating member is arranged on the main surface so as to surround the connecting member.
  • the semiconductor package including the semiconductor element is arranged on the connecting member.
  • the connecting member is heated while pressing the semiconductor package toward the connecting member side. As a result, the heat radiating member and the semiconductor package are connected by the connecting member.
  • the position of the top of the regulating member arranged so as to surround the connecting member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side.
  • FIG. It is sectional drawing which shows the semiconductor module which concerns on Embodiment 1.
  • FIG. It is sectional drawing which shows the semiconductor package which comprises the semiconductor module shown in FIG. It is a plan schematic diagram of the semiconductor module shown in FIG. It is sectional drawing which shows the modification of the semiconductor module shown in FIG.
  • FIG. It is sectional drawing which shows the semiconductor module which concerns on Embodiment 2.
  • FIG. It is an enlarged cross-sectional schematic diagram which shows the region XI of FIG. It is sectional drawing which shows the semiconductor module which concerns on Embodiment 3.
  • FIG. It is sectional drawing which shows the semiconductor module which concerns on Embodiment 4.
  • FIG. It is sectional drawing which shows the semiconductor module which concerns on Embodiment 5.
  • FIG. It is a block diagram which shows the structure of the power conversion system to which the power conversion apparatus which concerns on Embodiment 6 is applied.
  • FIG. 1 is a schematic cross-sectional view showing the semiconductor module 100 according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view showing a semiconductor package 200 constituting the semiconductor module 100 shown in FIG.
  • FIG. 3 is a schematic plan view of the semiconductor module shown in FIG.
  • the semiconductor module 100 shown in FIGS. 1 to 3 is, for example, a power semiconductor module, and mainly includes a heat radiating member 7, a semiconductor package 200, a connecting member 8, and a regulating member 9.
  • the semiconductor package 200 is connected to the heat radiating member 7 by the connecting member 8.
  • the regulating member 9 is arranged so as to surround the outer peripheral portion of the connecting member 8.
  • the regulating member 9 is, for example, a resin outflow prevention material. In the direction perpendicular to the main surface 7a, the position of the top portion 9a of the regulating member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connecting member 8 on the semiconductor package 200 side.
  • the heat radiating member 7 which is a heat sink has a main surface 7a.
  • the heat radiating member 7 is made of a metal such as aluminum or copper.
  • the heat radiating member 7 has a flat block shape, but the portion other than the main surface 7a to which the semiconductor package 200 is adhered has a fin shape in order to increase the heat radiating area. Or may be processed into an uneven shape.
  • the semiconductor package 200 is arranged on the main surface 7a of the heat radiating member 7.
  • the semiconductor package 200 mainly includes a semiconductor element 1, a heat spreader 3, a lead frame 5, a bonding wire 6, and a sealing resin 4.
  • the semiconductor element 1 is connected to the upper surface of the heat spreader 3 via the solder 2.
  • the semiconductor element 1 is connected to the lead frame 5 by a bonding wire 6.
  • the sealing resin 4 is formed so as to arrange the heat spreader 3, the semiconductor element 1, a part of the lead frame 5, and the bonding wire 6 inside.
  • the sealing resin 4 seals the semiconductor element 1, a part of the lead frame 5, a part of the heat spreader 3, and the bonding wire 6.
  • the semiconductor element 1 which is a power semiconductor element
  • a power control semiconductor element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor), a freewheeling diode, or the like is used.
  • the heat spreader 3 is made of a metal having excellent heat dissipation such as copper or aluminum.
  • the solder 2 is used as the connecting material for connecting the heat spreader 3 and the semiconductor element 1 as described above, the connecting material is not limited to this, and the connecting material is replaced with the solder 2.
  • Sintered silver or a conductive adhesive may be used.
  • the semiconductor element 1 and the heat spreader 3 may be bonded by using a liquid phase diffusion bonding technique.
  • the lead frame 5 is patterned as an external terminal used for input / output of current and voltage.
  • the lead frame 5 is generally made of a metal such as copper like the heat spreader 3.
  • a part of the lead frame 5 is joined to the heat spreader 3 by soldering.
  • the other part of the lead frame 5 is electrically connected to the semiconductor element 1 by the bonding wire 6.
  • the bonding wire 6 is, for example, a wire rod made of an aluminum alloy or a copper alloy having a wire diameter of 0.1 mm or more and 0.5 mm or less.
  • the material of the solder as the connecting material for joining the lead frame 5 and the heat spreader 3 may be the same as the material of the solder 2 for connecting the semiconductor element 1 and the heat spreader 3.
  • the connecting material for joining the lead frame 5 and the heat spreader 3 may be sintered silver or a conductive adhesive.
  • the lead frame 5 and the heat spreader 3 may be bonded using a liquid phase diffusion bonding technique.
  • the semiconductor element 1 and the lead frame 5 are electrically connected by the bonding wire 6, but other configurations may be used.
  • the bonding ribbon or the lead frame 5 may be extended onto the semiconductor element 1.
  • the bonding ribbon or lead frame 5 and the semiconductor element 1 may be connected by solder, sintered silver, or a conductive adhesive.
  • the bonding ribbon or lead frame 5 and the semiconductor element 1 may be directly bonded by using a liquid phase diffusion bonding technique.
  • the lead frame 5 and the heat spreader 3 may have a structure obtained by integrally molding a metal plate by etching or die processing. That is, the lead frame 5 and the heat spreader 3 may be integrated members.
  • the sealing resin 4 is arranged so as to cover each of the above-mentioned members. That is, the entire surface of the semiconductor element 1, the solder 2, the heat spreader 3, and the bonding wire 6 is entirely covered with the sealing resin 4. However, only a part of the lead frame 5 extending from the upper side to the outside of the heat spreader 3, that is, the inner part of the lead frame 5 is covered with the sealing resin 4. The other part of the lead frame 5, particularly the outer part of the lead frame 5, is not covered with the sealing resin 4. As a result, the outer portion of the lead frame 5 that is not covered with the sealing resin 4 can be electrically connected to the outer side of the semiconductor module 100. As for the heat spreader 3, the bottom surface of the heat spreader 3 is not covered with the sealing resin 4 and is exposed. The bottom surface of the heat spreader 3 is connected to the heat radiating member 7 via the connecting member 8. With such a configuration, the heat generated from the semiconductor element 1 is released to the outside of the semiconductor package 200 via the solder 2 and the heat spreader 3.
  • any resin can be used as the sealing resin 4, but for example, a transfer-molded epoxy resin can be used.
  • a transfer-molded epoxy resin can be used.
  • the connecting member 8 is located between the heat radiating member 7 and the semiconductor package 200.
  • the connecting member 8 connects the heat radiating member 7 and the semiconductor package 200.
  • the connecting member 8 is, for example, a resin insulating layer.
  • the connecting member 8 is preferably a resin layer having excellent thermal conductivity and electrical insulation.
  • a heat conductive sheet in which an inorganic filler is dispersed in a cured product of a thermosetting resin is widely used. That is, the heat conductive sheet can be used as the connecting member 8.
  • the inorganic filler used for the heat conductive sheet include alumina, boron nitride, silica, and aluminum nitride.
  • Boron nitride is often used as the inorganic filler when particularly high thermal conductivity and insulating properties are required. Boron nitride is excellent in chemical stability in addition to thermal conductivity and electrical insulation. In addition, boron nitride is non-toxic and relatively inexpensive.
  • thermosetting resin a layer obtained by compression firing an inorganic material such as boron nitride may be impregnated with a thermosetting resin. Further, as the connecting member 8, a layer of a thermosetting insulating resin to which grease or an inorganic filler is not added may be used, although the heat dissipation property is lower than that of the above-mentioned heat conductive sheet.
  • the semiconductor package 200 configured as described above transfers the heat generated from the semiconductor element 1 during operation to the heat radiating member 7 via the solder 2, the heat spreader 3, and the connecting member 8.
  • the heat radiating member 7 is made of a metal having excellent heat radiating properties such as copper or aluminum.
  • the regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8.
  • the regulating member 9 is fixed in a state in which the lower portion of the regulating member 9 is fitted in the groove portion 21 formed on the main surface 7a.
  • the groove 21 is formed so as to surround the semiconductor package 200 on the main surface 7a of the heat radiating member 7 in a plan view.
  • the regulating member 9 may be a metal frame or a resin frame such as PPS (polyphenylene sulfide) resin or PBT (polybutylene terephthalate) resin.
  • the regulating member 9 may be a frame including an elastic body such as silicone rubber.
  • FIG. 4 is a schematic cross-sectional view showing a modified example of the semiconductor module shown in FIG.
  • the semiconductor module 100 shown in FIG. 4 basically has the same configuration as the semiconductor module 100 shown in FIGS. 1 to 3, but the regulation member 9 is fixed to the groove 21 by the adhesive member 41. It is different from the semiconductor module 100 shown in FIGS. 1 to 3.
  • the adhesive member 41 adheres at least the bottom surface of the regulation member 9 to the bottom surface and a part of the side surface of the groove portion 21.
  • the regulating member 9 previously formed in a frame shape as described above may be installed and fixed on the main surface 7a of the heat radiating member 7. Further, in order to form the regulating member 9, a liquid material which is a liquid material to be the regulating member 9 may be arranged in the groove 21 of the heat radiating member 7 and the liquid material may be solidified. As a method of arranging the liquid material inside the groove 21, any method can be used, and for example, a coating method or a printing method can be used. Further, the relative permittivity ⁇ of the regulating member 9 may be larger than the relative permittivity ⁇ of the connecting member 8. In this case, partial discharge at the end of the heat spreader 3 can be suppressed during the operation of the semiconductor module 100. As a result, the insulating property of the semiconductor module 100 can be improved.
  • FIG. 5 is a flowchart for explaining the manufacturing method of the semiconductor module shown in FIG.
  • FIG. 6 is a flowchart for explaining an arrangement process of the method for manufacturing the semiconductor module shown in FIG.
  • FIG. 7 is a flowchart for explaining an example of a process of arranging the regulating member of the method of manufacturing the semiconductor module shown in FIG. 8 and 9 are schematic cross-sectional views showing a semiconductor module as a reference example.
  • the preparation step (S10) is first carried out.
  • the heat radiating member 7, the connecting member 8, the regulating member 9, and the semiconductor package 200 are prepared.
  • a groove 21 is formed in advance on the main surface 7a of the heat radiating member 7.
  • the placement process (S20) is carried out.
  • this step (S20) a laminated body in which the connecting member 8 and the semiconductor package 200 are laminated and arranged on the main surface 7a of the heat radiating member 7 is obtained.
  • the regulating member 9 is arranged around the connecting member 8.
  • a step (S21) of arranging the connecting members is carried out as shown in FIG.
  • the connecting member 8 containing the resin component is arranged on the main surface 7a of the heat radiating member 7.
  • the step (S22) of arranging the regulation member is carried out.
  • the regulating member 9 is arranged in the groove 21 on the main surface 7a of the heat radiating member 7.
  • the regulation member 9 is arranged so as to surround the connection member 8.
  • the process shown in FIG. 7 may be used. Specifically, the step (S221) of arranging the liquid in the region where the regulating member 9 should be arranged is carried out. In this step (S221), for example, a liquid material to be the regulating member 9 is arranged inside the groove portion 7a of the main surface 7a of the heat radiating member 7. Next, the step of solidifying (S222) is carried out. In this step (S222), the liquid material is solidified by a treatment such as heating or exposure. In this way, the regulating member 9 is arranged on the main surface 7a of the heat radiating member 7.
  • the regulation member 9 may be formed by repeating the step (S221) and the step (S222) a plurality of times and laminating a plurality of layers in which the liquid material is solidified.
  • step (S23) the step of arranging the semiconductor package (S23) is carried out.
  • the semiconductor package 200 is mounted on the connecting member 8.
  • connection step (S30) is carried out as shown in FIG.
  • a press machine capable of pressurizing and heating is used to heat the connecting member 8 while pressurizing the semiconductor package 200 in the direction toward the heat radiating member 7.
  • the heating conditions for example, a temperature condition such as 100 ° C. or higher and 250 ° C. or lower can be used.
  • the pressure as a pressurizing condition can be, for example, 0.5 MPa or more and 20 MPa or less.
  • the resin for example, thermosetting resin
  • the outflow portion 31 may be formed so as to protrude from the adhesive surface of the semiconductor package 200.
  • the distance H between the semiconductor package 200 and the heat radiating member 7 becomes smaller than the design value.
  • the insulation characteristics between the heat spreader 3 and the heat radiating member 7 deteriorate.
  • the pressure is large, the movement of the resin in the connecting member 8 becomes large. Therefore, the frequency of voids (air bubbles) and cracks in the connecting member 8 increases. In this case as well, the insulation characteristics between the heat spreader 3 and the heat radiating member 7 deteriorate. Further, voids and cracks inside the connecting member 8 may cause deterioration of heat dissipation characteristics.
  • the adhesive strength between the connecting member 8 and the semiconductor package 200 may not be sufficiently obtained.
  • peeling occurs at the bonding interface between the connecting member 8 and the semiconductor package 200 as shown in FIG. The occurrence of such peeling also causes deterioration of insulation characteristics and heat dissipation characteristics.
  • the positions of the upper and lower surfaces of the regulating member 9 are set to the connecting member.
  • the regulating member 9 is arranged so as not to have the same height as the upper and lower surfaces of the 8. From a different point of view, the side surface of the regulating member 9 faces the side end surface of the connecting member 8, and the thickness of the regulating member 9 is thicker than the thickness of the connecting member 8.
  • the resin outflow path from the connecting member 8 can be prevented from being linear as in the structures shown in FIGS. 8 and 9.
  • the resin as shown in FIG. 8 is subjected to the pressure required for sufficiently increasing the strength (adhesive strength) of the joint portion of the connecting member 8 between the semiconductor package 200 and the heat radiating member 7 in the step (S30). The occurrence of the outflow portion 31 can be prevented.
  • the regulating member 9 can prevent the resin component in the connecting member 8 from flowing out of the adhesive surface.
  • the connecting member 8 has a structure in which a layer obtained by compressing and firing an inorganic material such as boron nitride is impregnated with a thermosetting resin, the semiconductor while suppressing the occurrence of the outflow portion 31 shown in FIG. Sufficient pressure can be applied to the package 200. As a result, the adhesive strength between the semiconductor package 200 and the heat radiating member 7 can be kept sufficiently high. Therefore, it is possible to obtain a semiconductor module 100 having high reliability and excellent insulation characteristics and heat dissipation characteristics.
  • the semiconductor module 100 includes a heat radiating member 7, a semiconductor package 200, a connecting member 8, and a regulating member 9.
  • the heat radiating member 7 has a main surface 7a.
  • the semiconductor package 200 is arranged on the main surface 7a.
  • the semiconductor package 200 includes a semiconductor element 1.
  • the connecting member 8 is located between the heat radiating member 7 and the semiconductor package 200.
  • the connecting member 8 connects the heat radiating member 7 and the semiconductor package 200.
  • the connecting member 8 contains a resin component.
  • the regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8. In the direction perpendicular to the main surface 7a, the position of the top portion 9a of the regulating member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connecting member 8 on the semiconductor package 200 side.
  • the resin component flows out from the connection member 8. Can be prevented by the regulating member 9. Therefore, since the heat radiating member 7 and the semiconductor package 200 are connected by the connecting member 8, for example, even if the semiconductor package 200 is pressed toward the heat radiating member 7 and pressure is applied to the connecting member 8, the resin component of the connecting member 8 remains. It is possible to suppress the occurrence of defects such as flowing out from the outer peripheral end of the semiconductor package 200. Therefore, when the semiconductor package 200 and the heat radiating member 7 are connected, a sufficient pressure can be applied to the connecting member 8.
  • a groove 21 is formed on the main surface 7a in a region located under the regulation member 9.
  • a part of the regulating member 9 is located inside the groove portion 21.
  • the regulation member 9 can be easily positioned by arranging a part of the regulation member 9 in the groove portion 21.
  • the material constituting the regulating member 9 includes an elastic body.
  • the regulating member 9 and the heat radiating member 7 or the semiconductor package 200 are brought into close contact with each other by applying pressure to the connecting portion between the regulating member 9 and the heat radiating member 7 or the contact portion between the regulating member 9 and the semiconductor package 200. Can be done.
  • the relative permittivity of the regulating member 9 is larger than the relative permittivity of the connecting member 8. In this case, partial discharge generated from the portion of the semiconductor package 200 in contact with the connecting member 8 can be suppressed. As a result, the insulation characteristics of the semiconductor module 100 can be improved.
  • the method for manufacturing the semiconductor module 100 includes a step of preparing the heat radiating member 7 (S10), a step of arranging the connecting member 8 (S21), a step of arranging the regulating member 9 (S22), and a semiconductor.
  • a step of arranging the package 200 (S23) and a step of connecting the heat radiating member 7 and the semiconductor package 200 (S30) are provided.
  • the heat radiating member 7 has a main surface 7a.
  • the connecting member 8 is arranged on the main surface 7a.
  • the connecting member 8 contains a resin component.
  • the regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8.
  • the semiconductor package 200 including the semiconductor element 1 is arranged on the connecting member 8.
  • the connecting member 8 is heated while pressing the semiconductor package 200 toward the connecting member 8. As a result, the heat radiating member 7 and the semiconductor package 200 are connected by the connecting member 8.
  • the step of arranging the regulating member 9 (S22) is regulated by arranging the liquid to be the regulating member 9 on the main surface 7a (S221) and solidifying the liquid.
  • the step (S222) of forming the member 9 is included.
  • the regulating member 9 is formed in close contact with the main surface 7a of the heat radiating member 7. Therefore, since it is possible to prevent the generation of a gap at the contact interface between the heat radiating member 7 and the regulating member 9, it is possible to prevent the resin component of the connecting member 8 from flowing out to the outside through the gap.
  • FIG. 10 is a schematic cross-sectional view showing the semiconductor module according to the second embodiment.
  • FIG. 11 is an enlarged schematic cross-sectional view showing the region XI of FIG.
  • the semiconductor module 100 shown in FIGS. 10 and 11 basically has the same configuration as the semiconductor module 100 shown in FIGS. 1 to 3, but the configuration of the semiconductor package 200 is shown in FIGS. 1 to 3. It is different from the semiconductor module 100. That is, in the semiconductor module 100 shown in FIGS. 10 and 11, a pressing portion 22 that contacts the top portion 9a of the regulating member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200.
  • the pressing portion 22 is a part of the sealing resin 4.
  • the pressing portion 22 is a brim-shaped portion formed on the outer peripheral portion of the sealing resin 4.
  • the pressing portion 22 is formed on the semiconductor package 200 in this way, in the connecting step (S30) of FIG. 5, when the semiconductor package 200 is crimped to the heat radiating member 7 via the connecting member 8, the pressing portion 22 is pressed.
  • the top 9a of the regulating member 9 is pressed.
  • the adhesion between the regulating member 9, the heat radiating member 7, and the semiconductor package 200 can be further improved. Therefore, the gap between the regulating member 9 and the heat radiating member 7, which is the flow path of the resin component from the connecting member 8, or the gap between the regulating member 9 and the semiconductor package 200 can be reduced. Therefore, it is possible to prevent the resin from flowing out from the connecting member 8 more stably than the semiconductor module 100 according to the first embodiment.
  • the regulating member 9 when the regulating member 9 is made of an elastic body such as silicone rubber, the regulating member 9 can be compressed because the top portion 9a of the regulating member 9 can be pressed by the pressing portion 22 in the step (S30) shown in FIG. It is press-fitted into the groove 21 while being deformed. As a result, the gap that serves as the resin outflow path can be completely filled.
  • the semiconductor package 200 includes a pressing portion 22 that contacts the top portion 9a of the regulating member 9.
  • a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat radiating member 7. Can be suppressed.
  • the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed.
  • the material constituting the regulating member 9 preferably contains an elastic body.
  • the pressure portion 22 described above can apply pressure to the connecting portion between the regulating member 9 and the heat radiating member 7, or the contact portion between the regulating member 9 and the semiconductor package 200.
  • the regulating member 9 and the heat radiating member 7 or the semiconductor package 200 can be brought into close contact with each other. Therefore, it is possible to suppress the generation of a gap at the connection interface between the regulation member 9 and the heat radiating member 7 or the contact interface between the regulation member 9 and the semiconductor package 200, which can be a path for the resin component of the connection member 8 to flow out, and the connection member 8 It is possible to prevent the resin component from flowing out from the outside.
  • FIG. 12 is a schematic cross-sectional view showing the semiconductor module according to the third embodiment.
  • the semiconductor module 100 shown in FIG. 12 basically has the same configuration as the semiconductor module 100 shown in FIG. 10, but the configuration of the heat radiating member 7 is different from that of the semiconductor module 100 shown in FIG. That is, in the semiconductor module 100 shown in FIG. 12, the main surface 7a of the heat radiating member 7 is arranged so as to surround the first region 25, which is a convex portion located under the connecting member 8, and the first region 25. It includes a second region 23 whose surface is located below the first region 25.
  • the regulating member 9 is arranged so as to surround the outer periphery of the first region 25. The regulating member 9 is in contact with the stepped portion between the first region 25 and the second region 23.
  • the step of installing the regulating member 9 on the main surface 7a of the heat radiating member 7 can be easily carried out.
  • the regulating member 9 is made of an elastic body such as silicone rubber. That is, when the semiconductor package 200 is large and the size of the regulating member 9 is also large, the workability of the process of installing the regulating member 9 in the groove 21 as in the semiconductor module 100 according to the second embodiment is deteriorated. This is because the regulating member 9 made of an elastic body is easily deformed, and it is difficult to arrange the regulating member 9 in the groove 21 in a short time.
  • the regulating member 9 can be arranged along the stepped portion which is the outer peripheral portion of the first region 25 which is a convex portion, so that the regulating member 9 is arranged.
  • the workability of the step (S22) to be performed can be improved.
  • a first region 25 located below the connecting member 8 is a convex portion protruding toward the semiconductor package 200 from the second region 23 outside the first region 25.
  • the regulation member 9 can be easily positioned by arranging the regulation member 9 so as to be in contact with the outer peripheral side surface of the first region 25 which is a convex portion.
  • the semiconductor package 200 includes a pressing portion 22 that contacts the top 9a of the regulating member 9.
  • the same effect as that of the semiconductor module 100 according to the second embodiment described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat radiating member 7. Can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed.
  • the material constituting the regulating member 9 preferably contains an elastic body.
  • FIG. 13 is a schematic cross-sectional view showing the semiconductor module according to the fourth embodiment.
  • the semiconductor module 100 shown in FIG. 13 basically has the same configuration as the semiconductor module 100 shown in FIGS. 1 to 3, but the configuration of the heat radiating member 7 is the semiconductor module 100 shown in FIGS. 1 to 3. Different from. That is, in the semiconductor module 100 shown in FIG. 13, a recess 24 having a depth equal to or greater than the thickness of the connecting member 8 and equal to or less than the thickness of the regulating member 9 is formed on the main surface 7a of the heat radiating member 7. A regulating member 9 is arranged on the outer peripheral portion of the recess 24.
  • the connecting member 8 is arranged inside the recess 24 on the inner peripheral side of the regulating member 9.
  • the lower surface of the regulating member 9 in contact with the heat radiating member 7 is on an extension line having the same height as the lower surface (lower adhesive interface) of the connecting member 8.
  • the side wall of the recess 24 exists on the outer peripheral side of the regulating member 9. Therefore, the outflow of the resin component from the connecting member 8 can be minimized.
  • the regulating member 9 when the regulating member 9 is arranged on the main surface 7a of the heat radiating member 7, the regulating member 9 is restricted to the outer peripheral portion of the recess 24. Since the member 9 may be arranged, the workability of the step (S22) can be improved.
  • a recess 24 is formed on the main surface 7a in a region located below the regulating member 9 and the connecting member 8. A part of the regulating member 9 and the connecting member 8 are located inside the recess 24.
  • the regulating member 9 can be supported from the outer peripheral side by the side wall of the recess 24. .. Therefore, it is possible to suppress the occurrence of a problem that the regulating member 9 is deformed by the pressure to form a path through which the resin component flows to the outside of the regulating member 9.
  • the regulating member 9 may be arranged on the side wall of the recess 24, the workability of the step (S22) of arranging the regulating member 9 on the main surface 7a of the heat radiating member 7 can be improved.
  • FIG. 14 is a schematic cross-sectional view showing the semiconductor module according to the fifth embodiment.
  • the semiconductor module 100 shown in FIG. 14 basically has the same configuration as the semiconductor module 100 shown in FIG. 13, but the configuration of the semiconductor package 200 is different from that of the semiconductor module 100 shown in FIG. That is, in the semiconductor module 100 shown in FIG. 14, similarly to the semiconductor module 100 according to the second embodiment, the pressing portion 22 that contacts the outer peripheral portion of the sealing resin 4 of the semiconductor package 200 with the top portion 9a of the regulating member 9. Is formed.
  • the semiconductor module 100 has a recess 24 formed in the main surface 7a of the heat radiating member 7 like the semiconductor module 100 according to the fourth embodiment, the same effect as the semiconductor module 100 according to the fourth embodiment can be obtained. be able to.
  • the semiconductor package 200 includes a pressing portion 22 that contacts the top portion 9a of the regulating member 9. Therefore, the same effect as that of the semiconductor module 100 according to the second embodiment described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat radiating member 7. Can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed.
  • the material constituting the regulating member 9 preferably contains an elastic body.
  • Embodiment 6 the semiconductor modules according to the first to fifth embodiments described above are applied to a power conversion device.
  • the present invention is not limited to a specific power conversion device, the case where the present invention is applied to a three-phase inverter will be described below as a sixth embodiment.
  • FIG. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.
  • the power conversion system shown in FIG. 15 includes a power supply 300, a power conversion device 400, and a load 500.
  • the power supply 300 is a DC power supply, and supplies DC power to the power conversion device 400.
  • the power supply 300 can be configured with various things, for example, it can be configured with a DC system, a solar cell, a storage battery, or it can be configured with a rectifier circuit or an AC / DC converter connected to an AC system. May be good. Further, the power supply 300 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.
  • the power conversion device 400 is a three-phase inverter connected between the power supply 300 and the load 500, converts the DC power supplied from the power supply 300 into AC power, and supplies AC power to the load 500. As shown in FIG. 15, the power conversion device 400 has a main conversion circuit 401 that converts DC power into AC power and outputs it, and a control circuit 403 that outputs a control signal for controlling the main conversion circuit 401 to the main conversion circuit 401. And have.
  • the load 500 is a three-phase electric motor driven by AC power supplied from the power converter 400.
  • the load 500 is not limited to a specific application, and is an electric motor mounted on various electric devices.
  • the load 500 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 401 includes a switching element and a freewheeling diode (not shown), and when the switching element switches, the DC power supplied from the power supply 300 is converted into AC power and supplied to the load 500.
  • the main conversion circuit 401 is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It can consist of six anti-parallel freewheeling diodes.
  • Each switching element and each freewheeling diode of the main conversion circuit 401 is composed of a semiconductor module 402 corresponding to any one of the above-described first to fifth embodiments.
  • the six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 401 are connected to the load 500.
  • the main conversion circuit 401 includes a drive circuit (not shown) for driving each switching element
  • the drive circuit may be built in the semiconductor module 402, or a drive circuit may be provided separately from the semiconductor module 402. It may be provided.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 401 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 401.
  • a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element.
  • the drive signal When the switching element is kept on, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept off, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).
  • the control circuit 403 controls the switching element of the main conversion circuit 401 so that the desired power is supplied to the load 500. Specifically, the time (on time) at which each switching element of the main conversion circuit 401 should be in the on state is calculated based on the power to be supplied to the load 500.
  • the main conversion circuit 401 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal) is output to the drive circuit included in the main conversion circuit 401 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Is output.
  • the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.
  • the power conversion device since the semiconductor module according to any one of the first to fifth embodiments is applied as the switching element of the main conversion circuit 401 and the freewheeling diode, the power conversion device has high reliability. Can be realized.
  • the present invention is not limited to this, and can be applied to various power conversion devices.
  • a two-level power converter is used, but a three-level or multi-level power converter may be used, and when power is supplied to a single-phase load, the present invention is applied to a single-phase inverter. You may apply it.
  • the present invention can be applied to a DC / DC converter or an AC / DC converter.
  • the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor, for example, a power source for an electric discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system. It can be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

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Abstract

The present invention makes it possible to obtain a highly reliable semiconductor module and a power conversion apparatus in which the semiconductor module is used. The present invention provides a semiconductor module (100) equipped with a heat dissipation member (7), a semiconductor package (200), a connection member (8), and a restriction member (9). The connection member (8) connects the heat dissipation member (7) and the semiconductor package (200). The connection member (8) contains a resin component. The restriction member (9) is disposed on a main surface (7a) so as to surround the connection member (8). The position of a top part (9a) of the restriction member (9) is set further away from the main surface (7a) than the position of an outer peripheral part of the semiconductor-package (200)-side surface of the connection member (8), with respect to the direction perpendicular to the main surface (7a).

Description

半導体モジュール、半導体モジュールの製造方法および電力変換装置Semiconductor modules, semiconductor module manufacturing methods and power converters
　この発明は、半導体モジュール、半導体モジュールの製造方法および電力変換装置に関する。 The present invention relates to a semiconductor module, a method for manufacturing a semiconductor module, and a power conversion device.
　従来、半導体素子を含む半導体パッケージを、ヒートシンクなどの放熱部材に対して樹脂絶縁層などの接続部材により接続した半導体モジュールおよび当該半導体モジュールを用いた電力変換装置が知られている（たとえば、特開２０１３－１１０１８１号公報参照）。特開２０１３－１１０１８１号公報では、接続部材の厚みをコントロールするため、半導体パッケージと放熱部材との間において、樹脂絶縁層の外周を囲む樹脂厚み規制部材が配置されている。このような構成とすることで、特開２０１３－１１０１８１号公報では樹脂絶縁層での電気絶縁性と熱伝導性とを安定して確保できるとしている。 Conventionally, a semiconductor module in which a semiconductor package including a semiconductor element is connected to a heat radiating member such as a heat sink by a connecting member such as a resin insulating layer and a power conversion device using the semiconductor module are known (for example, Japanese Patent Application Laid-Open No. (See 2013-110181). In Japanese Patent Application Laid-Open No. 2013-110181, in order to control the thickness of the connecting member, a resin thickness regulating member surrounding the outer periphery of the resin insulating layer is arranged between the semiconductor package and the heat radiating member. With such a configuration, Japanese Patent Application Laid-Open No. 2013-110181 states that the electrical insulation and thermal conductivity of the resin insulating layer can be stably ensured.
特開２０１３－１１０１８１号公報Japanese Unexamined Patent Publication No. 2013-110181
　上述した従来の半導体モジュールにおいて、樹脂厚み規制部材の上面および下面の位置は、樹脂絶縁層の上面および下面の位置と同じになっている。つまり、樹脂厚み規制部材の上面と半導体パッケージの下面との第１接続界面と、樹脂絶縁層と半導体パッケージとの接続界面とは同じ平面上に位置する。また、樹脂厚み規制部材の下面と放熱部材の上面との第２接続界面と、樹脂絶縁層と放熱部材との接続界面とは同じ平面上に位置する。ここで、樹脂絶縁層により半導体パッケージを放熱部材に接着する時には、樹脂絶縁層を加圧しながら加熱する。このとき、樹脂厚み規制部材における第１接続界面または第２接続界面を介して、樹脂絶縁層の樹脂成分が半導体パッケージの外周側に流れ出す場合がある。 In the above-mentioned conventional semiconductor module, the positions of the upper surface and the lower surface of the resin thickness regulating member are the same as the positions of the upper surface and the lower surface of the resin insulating layer. That is, the first connection interface between the upper surface of the resin thickness regulating member and the lower surface of the semiconductor package and the connection interface between the resin insulating layer and the semiconductor package are located on the same plane. Further, the second connection interface between the lower surface of the resin thickness regulating member and the upper surface of the heat radiating member and the connecting interface between the resin insulating layer and the heat radiating member are located on the same plane. Here, when the semiconductor package is adhered to the heat radiating member by the resin insulating layer, the resin insulating layer is heated while being pressurized. At this time, the resin component of the resin insulating layer may flow out to the outer peripheral side of the semiconductor package through the first connection interface or the second connection interface of the resin thickness regulating member.
　この場合、接続部材としての樹脂絶縁層内において樹脂成分が大きく移動することで樹脂絶縁層においてボイドやクラックが発生する恐れがある。このような接続部材でのボイドやクラックの発生は、半導体モジュールの絶縁性や放熱性を低下させ、結果的に半導体モジュールの信頼性が低下する原因となる。 In this case, voids and cracks may occur in the resin insulating layer due to the large movement of the resin component in the resin insulating layer as the connecting member. The occurrence of voids and cracks in such a connecting member lowers the insulation and heat dissipation of the semiconductor module, and as a result, causes the reliability of the semiconductor module to deteriorate.
　この発明は、上記のような課題を解決するためになされたものであり、この発明の目的は、信頼性の高い半導体モジュールおよび当該半導体モジュールを用いた電力変換装置を提供することである。 The present invention has been made to solve the above problems, and an object of the present invention is to provide a highly reliable semiconductor module and a power conversion device using the semiconductor module.
　本開示に従った半導体モジュールは、放熱部材と、半導体パッケージと、接続部材と、規制部材とを備える。放熱部材は主面を有する。半導体パッケージは、主面上に配置される。半導体パッケージは半導体素子を含む。接続部材は、放熱部材と半導体パッケージとの間に位置する。接続部材は、放熱部材と半導体パッケージとを接続する。接続部材は樹脂成分を含む。規制部材は、接続部材を囲むように主面上に配置される。主面に垂直な方向において、規制部材の頂部の位置は、接続部材における半導体パッケージ側の表面の外周部の位置より主面から離れている。 The semiconductor module according to the present disclosure includes a heat radiating member, a semiconductor package, a connecting member, and a regulating member. The heat radiating member has a main surface. The semiconductor package is arranged on the main surface. The semiconductor package includes a semiconductor element. The connecting member is located between the heat radiating member and the semiconductor package. The connecting member connects the heat radiating member and the semiconductor package. The connecting member contains a resin component. The regulating member is arranged on the main surface so as to surround the connecting member. In the direction perpendicular to the main surface, the position of the top of the regulating member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side.
　本開示に従った電力変換装置は、主変換回路と制御回路とを備える。主変換回路は、上記半導体モジュールを有し、入力される電力を変換して出力する。制御回路は、主変換回路を制御する制御信号を主変換回路に出力する。 The power conversion device according to the present disclosure includes a main conversion circuit and a control circuit. The main conversion circuit has the above-mentioned semiconductor module, converts the input power, and outputs it. The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
　本開示に従った半導体モジュールの製造方法は、放熱部材を準備する工程と、接続部材を配置する工程と、規制部材を配置する工程と、半導体パッケージを配置する工程と、放熱部材と半導体パッケージとを接続する工程とを備える。放熱部材は主面を有する。接続部材を配置する工程では、主面上に接続部材が配置される。接続部材は樹脂成分を含む。規制部材を配置する工程では、主面上に、接続部材を囲むように規制部材が配置される。半導体パッケージを配置する工程では、接続部材上に、半導体素子を含む半導体パッケージが配置される。上記接続する工程では、半導体パッケージを接続部材側に向けて押圧しながら接続部材を加熱する。この結果、接続部材によって放熱部材と半導体パッケージとが接続される。 The method for manufacturing a semiconductor module according to the present disclosure includes a step of preparing a heat radiating member, a step of arranging a connecting member, a step of arranging a regulating member, a step of arranging a semiconductor package, and a step of arranging the heat radiating member and the semiconductor package. It is provided with a process of connecting. The heat radiating member has a main surface. In the step of arranging the connecting member, the connecting member is arranged on the main surface. The connecting member contains a resin component. In the step of arranging the regulating member, the regulating member is arranged on the main surface so as to surround the connecting member. In the process of arranging the semiconductor package, the semiconductor package including the semiconductor element is arranged on the connecting member. In the above connecting step, the connecting member is heated while pressing the semiconductor package toward the connecting member side. As a result, the heat radiating member and the semiconductor package are connected by the connecting member.
　上記によれば、接続部材を囲むように配置された規制部材の頂部の位置は、接続部材における半導体パッケージ側の表面の外周部の位置より主面から離れているので、接続部材により半導体パッケージを放熱部材に接続する際に、接続部材の一部が半導体パッケージの外側に漏れ出すといった問題の発生を抑制できる。この結果、信頼性の高い半導体モジュールおよび当該半導体モジュールを用いた電力変換装置が得られる。 According to the above, the position of the top of the regulating member arranged so as to surround the connecting member is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side. When connecting to the heat radiating member, it is possible to suppress the occurrence of a problem that a part of the connecting member leaks to the outside of the semiconductor package. As a result, a highly reliable semiconductor module and a power conversion device using the semiconductor module can be obtained.
実施の形態１に係る半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 1. FIG. 図１に示した半導体モジュールを構成する半導体パッケージを示す断面模式図である。It is sectional drawing which shows the semiconductor package which comprises the semiconductor module shown in FIG. 図１に示した半導体モジュールの平面模式図である。It is a plan schematic diagram of the semiconductor module shown in FIG. 図１に示した半導体モジュールの変形例を示す断面模式図である。It is sectional drawing which shows the modification of the semiconductor module shown in FIG. 図１に示した半導体モジュールの製造方法を説明するためのフローチャートである。It is a flowchart for demonstrating the manufacturing method of the semiconductor module shown in FIG. 図５に示した半導体モジュールの製造方法の配置工程を説明するためのフローチャートである。It is a flowchart for demonstrating the arrangement process of the manufacturing method of the semiconductor module shown in FIG. 図６に示した半導体モジュールの製造方法の規制部材を配置する工程の一例を説明するためのフローチャートである。It is a flowchart for demonstrating an example of the process of arranging the regulation member of the manufacturing method of the semiconductor module shown in FIG. 参考例である半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which is a reference example. 参考例である半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which is a reference example. 実施の形態２に係る半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 2. FIG. 図１０の領域ＸＩを示す拡大断面模式図である。It is an enlarged cross-sectional schematic diagram which shows the region XI of FIG. 実施の形態３に係る半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 3. FIG. 実施の形態４に係る半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 4. FIG. 実施の形態５に係る半導体モジュールを示す断面模式図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 5. FIG. 実施の形態６に係る電力変換装置を適用した電力変換システムの構成を示すブロック図である。It is a block diagram which shows the structure of the power conversion system to which the power conversion apparatus which concerns on Embodiment 6 is applied.
　以下、本発明の実施の形態を説明する。なお、同一の構成には同一の参照番号を付し、その説明は繰り返さない。 Hereinafter, embodiments of the present invention will be described. The same reference number will be assigned to the same configuration, and the description will not be repeated.
　実施の形態１．
　＜半導体モジュールの構成＞
　図１は、実施の形態１に係る半導体モジュール１００を示す断面模式図である。図２は、図１に示した半導体モジュール１００を構成する半導体パッケージ２００を示す断面模式図である。図３は、図１に示した半導体モジュールの平面模式図である。 Embodiment 1.
<Semiconductor module configuration>
FIG. 1 is a schematic cross-sectional view showing the semiconductor module 100 according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a semiconductor package 200 constituting the semiconductor module 100 shown in FIG. FIG. 3 is a schematic plan view of the semiconductor module shown in FIG.
　図１～図３に示した半導体モジュール１００は、たとえばパワー半導体モジュールであって、放熱部材７と、半導体パッケージ２００と、接続部材８と、規制部材９とを主に備える。半導体パッケージ２００は、接続部材８により放熱部材７に接続されている。接続部材８の外周部を囲むように規制部材９が配置されている。規制部材９はたとえば樹脂流れ出し防止材である。主面７ａに垂直な方向において、規制部材９の頂部９ａの位置は、接続部材８における半導体パッケージ２００側の表面の外周部の位置より主面７ａから離れている。 The semiconductor module 100 shown in FIGS. 1 to 3 is, for example, a power semiconductor module, and mainly includes a heat radiating member 7, a semiconductor package 200, a connecting member 8, and a regulating member 9. The semiconductor package 200 is connected to the heat radiating member 7 by the connecting member 8. The regulating member 9 is arranged so as to surround the outer peripheral portion of the connecting member 8. The regulating member 9 is, for example, a resin outflow prevention material. In the direction perpendicular to the main surface 7a, the position of the top portion 9a of the regulating member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connecting member 8 on the semiconductor package 200 side.
　ヒートシンクである放熱部材７は主面７ａを有する。放熱部材７は、たとえばアルミニウムまたは銅など金属により構成されている。なお、本明細書の実施の形態における全ての図では、放熱部材７は、平坦なブロック状であるが、半導体パッケージ２００を接着する主面７ａ以外の部分について、放熱面積を増やすためにフィン状や凹凸状に加工してもよい。 The heat radiating member 7 which is a heat sink has a main surface 7a. The heat radiating member 7 is made of a metal such as aluminum or copper. In all the figures according to the embodiment of the present specification, the heat radiating member 7 has a flat block shape, but the portion other than the main surface 7a to which the semiconductor package 200 is adhered has a fin shape in order to increase the heat radiating area. Or may be processed into an uneven shape.
　半導体パッケージ２００は、放熱部材７の主面７ａ上に配置される。半導体パッケージ２００は、半導体素子１と、ヒートスプレッダ３と、リードフレーム５と、ボンディングワイヤ６と、封止樹脂４とを主に含む。ヒートスプレッダ３の上面上にはんだ２を介して半導体素子１が接続されている。半導体素子１は、リードフレーム５とボンディングワイヤ６により接続されている。封止樹脂４は、ヒートスプレッダ３と、半導体素子１と、リードフレーム５の一部と、ボンディングワイヤ６とを内部に配置するように形成されている。封止樹脂４は上記半導体素子１，リードフレーム５の一部、ヒートスプレッダ３の一部、およびボンディングワイヤ６を封止する。 The semiconductor package 200 is arranged on the main surface 7a of the heat radiating member 7. The semiconductor package 200 mainly includes a semiconductor element 1, a heat spreader 3, a lead frame 5, a bonding wire 6, and a sealing resin 4. The semiconductor element 1 is connected to the upper surface of the heat spreader 3 via the solder 2. The semiconductor element 1 is connected to the lead frame 5 by a bonding wire 6. The sealing resin 4 is formed so as to arrange the heat spreader 3, the semiconductor element 1, a part of the lead frame 5, and the bonding wire 6 inside. The sealing resin 4 seals the semiconductor element 1, a part of the lead frame 5, a part of the heat spreader 3, and the bonding wire 6.
　パワー半導体素子である半導体素子１としては、ＭＯＳＦＥＴ（Ｍｅｔａｌ　Ｏｘｉｄｅ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ　Ｆｉｅｌｄ　Ｅｆｆｅｃｔ　Ｔｒａｎｓｉｓｔｏｒ）やＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ　Ｇａｔｅ　Ｂｉｐｏｌａｒ　Ｔｒａｎｓｉｓｔｏｒ）などの電力制御用半導体素子、または還流ダイオードなどが用いられる。ヒートスプレッダ３は、銅またはアルミニウムなどの放熱性に優れる金属により形成されている。なお、ヒートスプレッダ３と半導体素子１とを接続する接続材料として、上記のようにはんだ２を用いているが、接続材料としてはこれに限定されるものではない、接続材料として、はんだ２に代えて焼結銀または導電性接着剤を用いてもよい。半導体素子１とヒートスプレッダ３とを、液相拡散接合技術を用いて接合してもよい。 As the semiconductor element 1 which is a power semiconductor element, a power control semiconductor element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor), a freewheeling diode, or the like is used. The heat spreader 3 is made of a metal having excellent heat dissipation such as copper or aluminum. Although the solder 2 is used as the connecting material for connecting the heat spreader 3 and the semiconductor element 1 as described above, the connecting material is not limited to this, and the connecting material is replaced with the solder 2. Sintered silver or a conductive adhesive may be used. The semiconductor element 1 and the heat spreader 3 may be bonded by using a liquid phase diffusion bonding technique.
　リードフレーム５は、電流および電圧の入出力に用いられる外部端子としてパターン形成されている。リードフレーム５は一般的にヒートスプレッダ３と同様に銅などの金属により構成される。リードフレーム５の一部はヒートスプレッダ３とはんだにより接合されている。リードフレーム５の他の一部は、半導体素子１とボンディングワイヤ６により電気的に接続されている。ボンディングワイヤ６は、たとえば線径０．１ｍｍ以上０．５ｍｍ以下のアルミニウム合金製もしくは銅合金製の線材である。 The lead frame 5 is patterned as an external terminal used for input / output of current and voltage. The lead frame 5 is generally made of a metal such as copper like the heat spreader 3. A part of the lead frame 5 is joined to the heat spreader 3 by soldering. The other part of the lead frame 5 is electrically connected to the semiconductor element 1 by the bonding wire 6. The bonding wire 6 is, for example, a wire rod made of an aluminum alloy or a copper alloy having a wire diameter of 0.1 mm or more and 0.5 mm or less.
　リードフレーム５とヒートスプレッダ３とを接合する接続材料としてのはんだの材質は、半導体素子１とヒートスプレッダ３とを接続するはんだ２の材質と同じであってもよい。リードフレーム５とヒートスプレッダ３とを接合する接続材料は、焼結銀または導電性接着剤であってもよい。リードフレーム５とヒートスプレッダ３とは液相拡散接合技術を用いて接合されてもよい。 The material of the solder as the connecting material for joining the lead frame 5 and the heat spreader 3 may be the same as the material of the solder 2 for connecting the semiconductor element 1 and the heat spreader 3. The connecting material for joining the lead frame 5 and the heat spreader 3 may be sintered silver or a conductive adhesive. The lead frame 5 and the heat spreader 3 may be bonded using a liquid phase diffusion bonding technique.
　なお、上述した半導体パッケージ２００では、半導体素子１とリードフレーム５との電気的接続をボンディングワイヤ６により行っているが、他の構成を用いてもよい。たとえば、ボンディングリボンまたはリードフレーム５を半導体素子１上まで延長させてもよい。当該ボンディングリボンまたはリードフレーム５と半導体素子１とをはんだ、焼結銀、または導電性接着剤により接続してもよい。ボンディングリボンまたはリードフレーム５と半導体素子１とを、液相拡散接合技術を用いて直接接合してもよい。また、リードフレーム５とヒートスプレッダ３とは金属板をエッチングまたは金型加工することにより一体成形して得られる構造としてもよい。つまり、リードフレーム５とヒートスプレッダ３とは一体化した部材であってもよい。 In the semiconductor package 200 described above, the semiconductor element 1 and the lead frame 5 are electrically connected by the bonding wire 6, but other configurations may be used. For example, the bonding ribbon or the lead frame 5 may be extended onto the semiconductor element 1. The bonding ribbon or lead frame 5 and the semiconductor element 1 may be connected by solder, sintered silver, or a conductive adhesive. The bonding ribbon or lead frame 5 and the semiconductor element 1 may be directly bonded by using a liquid phase diffusion bonding technique. Further, the lead frame 5 and the heat spreader 3 may have a structure obtained by integrally molding a metal plate by etching or die processing. That is, the lead frame 5 and the heat spreader 3 may be integrated members.
　以上に述べた各部材を覆うように、封止樹脂４が配置されている。つまり半導体素子１、はんだ２、ヒートスプレッダ３、ボンディングワイヤ６はすべて、その表面の全体が封止樹脂４に覆われている。ただし、ヒートスプレッダ３の上方から外側へ向かうように延びるリードフレーム５は、その一部、すなわちリードフレーム５の内側の部分のみが封止樹脂４に覆われている。リードフレーム５における他の一部、特にリードフレーム５の外側の部分は封止樹脂４には覆われない。これにより封止樹脂４に覆われていないリードフレーム５の外側の部分が半導体モジュール１００の外側と電気的に接続可能となっている。ヒートスプレッダ３についても、当該ヒートスプレッダ３の底面は封止樹脂４には覆われず露出している。ヒートスプレッダ３の底面は接続部材８を介して放熱部材７と接続されている。このような構成により、半導体素子１から発生した熱ははんだ２およびヒートスプレッダ３を介して半導体パッケージ２００の外部に放出される。 The sealing resin 4 is arranged so as to cover each of the above-mentioned members. That is, the entire surface of the semiconductor element 1, the solder 2, the heat spreader 3, and the bonding wire 6 is entirely covered with the sealing resin 4. However, only a part of the lead frame 5 extending from the upper side to the outside of the heat spreader 3, that is, the inner part of the lead frame 5 is covered with the sealing resin 4. The other part of the lead frame 5, particularly the outer part of the lead frame 5, is not covered with the sealing resin 4. As a result, the outer portion of the lead frame 5 that is not covered with the sealing resin 4 can be electrically connected to the outer side of the semiconductor module 100. As for the heat spreader 3, the bottom surface of the heat spreader 3 is not covered with the sealing resin 4 and is exposed. The bottom surface of the heat spreader 3 is connected to the heat radiating member 7 via the connecting member 8. With such a configuration, the heat generated from the semiconductor element 1 is released to the outside of the semiconductor package 200 via the solder 2 and the heat spreader 3.
　封止樹脂４としては、任意の樹脂を用いることができるが、たとえばトランスファーモールド成形されたエポキシ樹脂を用いることができる。封止樹脂４が半導体素子１の周囲を覆うことにより、半導体素子１が埃や湿度等の外的環境の影響を受けることを防止できる。この結果、半導体パッケージ２００の信頼性を向上させることができる。 Any resin can be used as the sealing resin 4, but for example, a transfer-molded epoxy resin can be used. By covering the periphery of the semiconductor element 1 with the sealing resin 4, it is possible to prevent the semiconductor element 1 from being affected by the external environment such as dust and humidity. As a result, the reliability of the semiconductor package 200 can be improved.
　接続部材８は、放熱部材７と半導体パッケージ２００との間に位置する。接続部材８は、放熱部材７と半導体パッケージ２００とを接続する。接続部材８は例えば樹脂絶縁層である。接続部材８は、熱伝導性及び電気絶縁性に優れた樹脂層であることが好ましい。このような要求を満たす部材として、無機充填材を熱硬化性樹脂の硬化物中に分散させた熱伝導性シートが広く用いられている。つまり、接続部材８として上記熱伝導性シートを用いることができる。熱伝導性シートに用いられる無機充填材としては、アルミナ、窒化ホウ素、シリカ、窒化アルミニウム等が挙げられる。特に高い熱伝導性および絶縁性が要求される場合、上記無機充填材として窒化ホウ素がよく用いられる。窒化ホウ素は、熱伝導性及び電気絶縁性に加えて、化学的安定性にも優れている。さらに、窒化ホウ素は、無毒性且つ比較的安価でもある。 The connecting member 8 is located between the heat radiating member 7 and the semiconductor package 200. The connecting member 8 connects the heat radiating member 7 and the semiconductor package 200. The connecting member 8 is, for example, a resin insulating layer. The connecting member 8 is preferably a resin layer having excellent thermal conductivity and electrical insulation. As a member satisfying such a requirement, a heat conductive sheet in which an inorganic filler is dispersed in a cured product of a thermosetting resin is widely used. That is, the heat conductive sheet can be used as the connecting member 8. Examples of the inorganic filler used for the heat conductive sheet include alumina, boron nitride, silica, and aluminum nitride. Boron nitride is often used as the inorganic filler when particularly high thermal conductivity and insulating properties are required. Boron nitride is excellent in chemical stability in addition to thermal conductivity and electrical insulation. In addition, boron nitride is non-toxic and relatively inexpensive.
　なお、接続部材８としては、窒化ホウ素のような無機材料を圧縮焼成して得た層に、熱硬化性樹脂を含浸させたものを用いてもよい。また、接続部材８として、上述した熱伝導性シートと比較して放熱性は低下するが、グリースや、無機充填材を添加していない熱硬化絶縁樹脂の層を用いてもよい。 As the connecting member 8, a layer obtained by compression firing an inorganic material such as boron nitride may be impregnated with a thermosetting resin. Further, as the connecting member 8, a layer of a thermosetting insulating resin to which grease or an inorganic filler is not added may be used, although the heat dissipation property is lower than that of the above-mentioned heat conductive sheet.
　以上のように構成された半導体パッケージ２００は、動作中に半導体素子１から発生した熱を、はんだ２、ヒートスプレッダ３、および接続部材８を介して放熱部材７に伝える。放熱部材７は、ヒートスプレッダ３と同様、銅またはアルミニウムといった放熱性に優れる金属で構成されている。 The semiconductor package 200 configured as described above transfers the heat generated from the semiconductor element 1 during operation to the heat radiating member 7 via the solder 2, the heat spreader 3, and the connecting member 8. Like the heat spreader 3, the heat radiating member 7 is made of a metal having excellent heat radiating properties such as copper or aluminum.
　規制部材９は、接続部材８を囲むように主面７ａ上に配置される。規制部材９は、主面７ａに形成された溝部２１に当該規制部材９の下部がはめ込まれた状態で固定されている。溝部２１は平面視において放熱部材７の主面７ａに半導体パッケージ２００を囲むように形成されている。規制部材９は、金属製の枠、またはＰＰＳ（ポリフェニレンサルファイド）樹脂、ＰＢＴ（ポリブチレンテレフタレート）樹脂のような樹脂製の枠であってもよい。規制部材９は、シリコーンゴムのような弾性体を含む枠体でもよい。このように規制部材９として弾性体を含む枠体を用いる場合、溝部２１の寸法バラつきがあっても、規制部材９を溝部２１に確実にはめ込むことができる。溝部２１へ規制部材９の固定方法は、嵌合だけでも良いが、他の方法を用いてもよい。たとえば、溝部２１への規制部材９の固定強度を高めるために、図４に示すように接着剤などの接着部材４１を介して規制部材９を溝部２１に接着してもよい。ここで、図４は、図１に示した半導体モジュールの変形例を示す断面模式図である。図４に示した半導体モジュール１００は基本的には図１～図３に示した半導体モジュール１００と同様の構成を備えるが、規制部材９が接着部材４１により溝部２１に固定されている点が図１～図３に示した半導体モジュール１００と異なっている。図４に示した半導体モジュール１００では、接着部材４１が少なくとも規制部材９の底面と溝部２１の底面および側面の一部とを接着する。 The regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8. The regulating member 9 is fixed in a state in which the lower portion of the regulating member 9 is fitted in the groove portion 21 formed on the main surface 7a. The groove 21 is formed so as to surround the semiconductor package 200 on the main surface 7a of the heat radiating member 7 in a plan view. The regulating member 9 may be a metal frame or a resin frame such as PPS (polyphenylene sulfide) resin or PBT (polybutylene terephthalate) resin. The regulating member 9 may be a frame including an elastic body such as silicone rubber. When a frame including an elastic body is used as the regulating member 9 in this way, the regulating member 9 can be reliably fitted into the groove 21 even if the groove 21 has dimensional variations. The method of fixing the regulating member 9 to the groove 21 may be only fitting, but other methods may be used. For example, in order to increase the fixing strength of the regulating member 9 to the groove 21, the regulating member 9 may be adhered to the groove 21 via an adhesive member 41 such as an adhesive as shown in FIG. Here, FIG. 4 is a schematic cross-sectional view showing a modified example of the semiconductor module shown in FIG. The semiconductor module 100 shown in FIG. 4 basically has the same configuration as the semiconductor module 100 shown in FIGS. 1 to 3, but the regulation member 9 is fixed to the groove 21 by the adhesive member 41. It is different from the semiconductor module 100 shown in FIGS. 1 to 3. In the semiconductor module 100 shown in FIG. 4, the adhesive member 41 adheres at least the bottom surface of the regulation member 9 to the bottom surface and a part of the side surface of the groove portion 21.
　放熱部材７に固定された規制部材９の成形方法として、上記のように予め枠状に形成された規制部材９を放熱部材７の主面７ａに設置、固定してもよい。また、規制部材９を形成するため、規制部材９となるべき液状材である液体材料を放熱部材７の溝部２１に配置し、そのご液体材料を固化してもよい。液体材料を溝部２１の内部に配置する方法としては、任意の方法を用いることができるが、たとえば塗布法または印刷法を用いることができる。また、規制部材９の比誘電率εを、接続部材８の比誘電率εよりも大きくしてもよい。この場合、半導体モジュール１００の動作中にヒートスプレッダ３の端部での部分放電を抑制できる。この結果、半導体モジュール１００の絶縁性を向上させることができる。 As a method of molding the regulating member 9 fixed to the heat radiating member 7, the regulating member 9 previously formed in a frame shape as described above may be installed and fixed on the main surface 7a of the heat radiating member 7. Further, in order to form the regulating member 9, a liquid material which is a liquid material to be the regulating member 9 may be arranged in the groove 21 of the heat radiating member 7 and the liquid material may be solidified. As a method of arranging the liquid material inside the groove 21, any method can be used, and for example, a coating method or a printing method can be used. Further, the relative permittivity ε of the regulating member 9 may be larger than the relative permittivity ε of the connecting member 8. In this case, partial discharge at the end of the heat spreader 3 can be suppressed during the operation of the semiconductor module 100. As a result, the insulating property of the semiconductor module 100 can be improved.
　＜半導体モジュールの製造方法＞
　図５は、図１に示した半導体モジュールの製造方法を説明するためのフローチャートである。図６は、図５に示した半導体モジュールの製造方法の配置工程を説明するためのフローチャートである。図７は、図６に示した半導体モジュールの製造方法の規制部材を配置する工程の一例を説明するためのフローチャートである。図８および図９は、参考例である半導体モジュールを示す断面模式図である。 <Manufacturing method of semiconductor module>
FIG. 5 is a flowchart for explaining the manufacturing method of the semiconductor module shown in FIG. FIG. 6 is a flowchart for explaining an arrangement process of the method for manufacturing the semiconductor module shown in FIG. FIG. 7 is a flowchart for explaining an example of a process of arranging the regulating member of the method of manufacturing the semiconductor module shown in FIG. 8 and 9 are schematic cross-sectional views showing a semiconductor module as a reference example.
　図５および図６を参照して、半導体モジュール１００の製造方法では、まず準備工程（Ｓ１０）を実施する。この工程（Ｓ１０）では、放熱部材７、接続部材８、規制部材９、半導体パッケージ２００を準備する。放熱部材７の主面７ａには、図１に示すように溝部２１が予め形成されている。 With reference to FIGS. 5 and 6, in the method of manufacturing the semiconductor module 100, the preparation step (S10) is first carried out. In this step (S10), the heat radiating member 7, the connecting member 8, the regulating member 9, and the semiconductor package 200 are prepared. As shown in FIG. 1, a groove 21 is formed in advance on the main surface 7a of the heat radiating member 7.
　次に、配置工程（Ｓ２０）を実施する。この工程（Ｓ２０）では、放熱部材７の主面７ａ上に接続部材８および半導体パッケージ２００を積層配置した積層体を得る。このとき接続部材８の周囲には規制部材９を配置する。 Next, the placement process (S20) is carried out. In this step (S20), a laminated body in which the connecting member 8 and the semiconductor package 200 are laminated and arranged on the main surface 7a of the heat radiating member 7 is obtained. At this time, the regulating member 9 is arranged around the connecting member 8.
　具体的には、この工程（Ｓ２０）では図６に示すように接続部材を配置する工程（Ｓ２１）を実施する。樹脂絶縁層形成工程である工程（Ｓ２１）では、放熱部材７の主面７ａ上に樹脂成分を含む接続部材８を配置する。次に、規制部材を配置する工程（Ｓ２２）を実施する。この工程（Ｓ２２）では、放熱部材７の主面７ａにおける溝部２１に規制部材９を配置する。規制部材９は接続部材８の周囲を囲むように配置される。 Specifically, in this step (S20), a step (S21) of arranging the connecting members is carried out as shown in FIG. In the step (S21) of forming the resin insulating layer, the connecting member 8 containing the resin component is arranged on the main surface 7a of the heat radiating member 7. Next, the step (S22) of arranging the regulation member is carried out. In this step (S22), the regulating member 9 is arranged in the groove 21 on the main surface 7a of the heat radiating member 7. The regulation member 9 is arranged so as to surround the connection member 8.
　なお、この工程（Ｓ２２）では、図７に示すプロセスを用いてもよい。具体的には、規制部材９を配置するべき領域に液体を配置する工程（Ｓ２２１）を実施する。この工程（Ｓ２２１）では、たとえば放熱部材７の主面７ａの溝部７ａ内部に規制部材９となるべき液体材料を配置する。次に、固化する工程（Ｓ２２２）を実施する。この工程（Ｓ２２２）では、液体材料を加熱または露光などの処理により固化する。このようにして、規制部材９を放熱部材７の主面７ａ上に配置する。なお、工程（Ｓ２２１）と工程（Ｓ２２２）を複数回繰り返し、液体材料を固化した層を複数層積層することで規制部材９を構成してもよい。 In this step (S22), the process shown in FIG. 7 may be used. Specifically, the step (S221) of arranging the liquid in the region where the regulating member 9 should be arranged is carried out. In this step (S221), for example, a liquid material to be the regulating member 9 is arranged inside the groove portion 7a of the main surface 7a of the heat radiating member 7. Next, the step of solidifying (S222) is carried out. In this step (S222), the liquid material is solidified by a treatment such as heating or exposure. In this way, the regulating member 9 is arranged on the main surface 7a of the heat radiating member 7. The regulation member 9 may be formed by repeating the step (S221) and the step (S222) a plurality of times and laminating a plurality of layers in which the liquid material is solidified.
　次に、半導体パッケージを配置する工程（Ｓ２３）を実施する。この工程（Ｓ２３）では、接続部材８上に半導体パッケージ２００を搭載する。 Next, the step of arranging the semiconductor package (S23) is carried out. In this step (S23), the semiconductor package 200 is mounted on the connecting member 8.
　次に、図５に示すように接続工程（Ｓ３０）を実施する。この工程（Ｓ３０）では、たとえば加圧加熱できるプレス機等を用いて、半導体パッケージ２００上から、放熱部材７に向かう方向に加圧しながら接続部材８を加熱する。加熱条件としては、たとえば１００℃以上２５０℃以下といった温度条件を用いることができる。また、加圧条件としての圧力はたとえば０．５ＭＰａ以上２０ＭＰａ以下とすることができる。 Next, the connection step (S30) is carried out as shown in FIG. In this step (S30), for example, a press machine capable of pressurizing and heating is used to heat the connecting member 8 while pressurizing the semiconductor package 200 in the direction toward the heat radiating member 7. As the heating conditions, for example, a temperature condition such as 100 ° C. or higher and 250 ° C. or lower can be used. Further, the pressure as a pressurizing condition can be, for example, 0.5 MPa or more and 20 MPa or less.
　ここで、上記工程（Ｓ３０）での圧力が大きかった場合、規制部材９を配置していない構成においては、接続部材８の一部を形成している樹脂（たとえば熱硬化性樹脂）が図８に示すように、半導体パッケージ２００の接着面より外にはみ出して流出部３１を形成する場合がある。このような流出部３１が大きくなると、半導体パッケージ２００と放熱部材７と間の距離Ｈが設計値より小さくなる。この結果、ヒートスプレッダ３と放熱部材７との間の絶縁特性が劣化する。また上記圧力が大きい場合、接続部材８内で樹脂の移動が大きくなる。このため、接続部材８内にボイド（気泡）やクラックが発生する頻度が高くなる。この場合も同様に、ヒートスプレッダ３と放熱部材７との間の絶縁特性が劣化する。さらに、接続部材８の内部のボイドやクラックは放熱特性の劣化の原因にもなり得る。 Here, when the pressure in the above step (S30) is large, the resin (for example, thermosetting resin) forming a part of the connecting member 8 is shown in FIG. 8 in the configuration in which the regulating member 9 is not arranged. As shown in the above, the outflow portion 31 may be formed so as to protrude from the adhesive surface of the semiconductor package 200. When such an outflow portion 31 becomes large, the distance H between the semiconductor package 200 and the heat radiating member 7 becomes smaller than the design value. As a result, the insulation characteristics between the heat spreader 3 and the heat radiating member 7 deteriorate. Further, when the pressure is large, the movement of the resin in the connecting member 8 becomes large. Therefore, the frequency of voids (air bubbles) and cracks in the connecting member 8 increases. In this case as well, the insulation characteristics between the heat spreader 3 and the heat radiating member 7 deteriorate. Further, voids and cracks inside the connecting member 8 may cause deterioration of heat dissipation characteristics.
　また、規制部材９を配置していない構成において、上記工程（Ｓ３０）における半導体パッケージ２００への圧力が小さい場合、接続部材８と半導体パッケージ２００との接着強度が十分得られない場合がある。この場合、半導体モジュール１００に対する温度サイクル等の信頼性試験において、図９に示すように接続部材８と半導体パッケージ２００との接着界面で剥離が発生する。このような剥離の発生は、やはり絶縁特性や放熱特性の劣化の原因となる。 Further, in the configuration in which the regulating member 9 is not arranged, if the pressure on the semiconductor package 200 in the above step (S30) is small, the adhesive strength between the connecting member 8 and the semiconductor package 200 may not be sufficiently obtained. In this case, in a reliability test such as a temperature cycle for the semiconductor module 100, peeling occurs at the bonding interface between the connecting member 8 and the semiconductor package 200 as shown in FIG. The occurrence of such peeling also causes deterioration of insulation characteristics and heat dissipation characteristics.
　そこで、上述した本実施の形態に係る半導体モジュールの製造方法では、樹脂流れ出し防止材としての規制部材９を配置する工程（Ｓ２２）を備えることにより、規制部材９の上下面の位置が、接続部材８の上下面と同一高さとならないように規制部材９が配置されている。異なる観点から言えば、規制部材９の側面が接続部材８の側端面と対向するとともに、接続部材８の厚さより規制部材９の厚さが厚くなっている。この結果、接続部材８からの樹脂流れ出し経路を図８および図９に示す構造のように一直線状とならないようにできる。この結果、半導体パッケージ２００と放熱部材７との接続部材８による接合部の強度（接着強度）を十分高めるために必要な圧力を工程（Ｓ３０）において印加しながら、図８に示すような樹脂の流出部３１の発生を防止できる。 Therefore, in the method for manufacturing the semiconductor module according to the present embodiment described above, by providing the step (S22) of arranging the regulating member 9 as the resin outflow prevention material, the positions of the upper and lower surfaces of the regulating member 9 are set to the connecting member. The regulating member 9 is arranged so as not to have the same height as the upper and lower surfaces of the 8. From a different point of view, the side surface of the regulating member 9 faces the side end surface of the connecting member 8, and the thickness of the regulating member 9 is thicker than the thickness of the connecting member 8. As a result, the resin outflow path from the connecting member 8 can be prevented from being linear as in the structures shown in FIGS. 8 and 9. As a result, the resin as shown in FIG. 8 is subjected to the pressure required for sufficiently increasing the strength (adhesive strength) of the joint portion of the connecting member 8 between the semiconductor package 200 and the heat radiating member 7 in the step (S30). The occurrence of the outflow portion 31 can be prevented.
　つまり、工程（Ｓ３０）において半導体パッケージ２００に圧力を加えながら接続部材８を加熱したときに、接続部材８内の樹脂成分が接着面外へ流れ出すことを規制部材９により防止できる。特に、接続部材８が、窒化ホウ素のような無機材を圧縮焼成した層に熱硬化性樹脂を含浸させた構成である場合に、図８に示す上記流出部３１の発生を抑制しつつ、半導体パッケージ２００に十分な圧力を印加できる。この結果、半導体パッケージ２００と放熱部材７との接着強度を十分高く保つことができる。したがって、高信頼性で絶縁特性および放熱特性に優れた半導体モジュール１００を得ることができる。 That is, when the connecting member 8 is heated while applying pressure to the semiconductor package 200 in the step (S30), the regulating member 9 can prevent the resin component in the connecting member 8 from flowing out of the adhesive surface. In particular, when the connecting member 8 has a structure in which a layer obtained by compressing and firing an inorganic material such as boron nitride is impregnated with a thermosetting resin, the semiconductor while suppressing the occurrence of the outflow portion 31 shown in FIG. Sufficient pressure can be applied to the package 200. As a result, the adhesive strength between the semiconductor package 200 and the heat radiating member 7 can be kept sufficiently high. Therefore, it is possible to obtain a semiconductor module 100 having high reliability and excellent insulation characteristics and heat dissipation characteristics.
　＜作用効果＞
　本開示に従った半導体モジュール１００は、放熱部材７と、半導体パッケージ２００と、接続部材８と、規制部材９とを備える。放熱部材７は主面７ａを有する。半導体パッケージ２００は、主面７ａ上に配置される。半導体パッケージ２００は半導体素子１を含む。接続部材８は、放熱部材７と半導体パッケージ２００との間に位置する。接続部材８は、放熱部材７と半導体パッケージ２００とを接続する。接続部材８は樹脂成分を含む。規制部材９は、接続部材８を囲むように主面７ａ上に配置される。主面７ａに垂直な方向において、規制部材９の頂部９ａの位置は、接続部材８における半導体パッケージ２００側の表面の外周部の位置より主面７ａから離れている。 <Effect>
The semiconductor module 100 according to the present disclosure includes a heat radiating member 7, a semiconductor package 200, a connecting member 8, and a regulating member 9. The heat radiating member 7 has a main surface 7a. The semiconductor package 200 is arranged on the main surface 7a. The semiconductor package 200 includes a semiconductor element 1. The connecting member 8 is located between the heat radiating member 7 and the semiconductor package 200. The connecting member 8 connects the heat radiating member 7 and the semiconductor package 200. The connecting member 8 contains a resin component. The regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8. In the direction perpendicular to the main surface 7a, the position of the top portion 9a of the regulating member 9 is farther from the main surface 7a than the position of the outer peripheral portion of the surface of the connecting member 8 on the semiconductor package 200 side.
　このようにすれば、接続部材８の外周を囲む規制部材９の頂部９ａが、接続部材８の上面である表面より高い位置となっているので、接続部材８から樹脂成分が外側へ流出することを規制部材９により防止できる。このため、接続部材８により放熱部材７と半導体パッケージ２００とを接続するため、たとえば半導体パッケージ２００を放熱部材７側に押圧して接続部材８に圧力を加えても、接続部材８の樹脂成分が半導体パッケージ２００の外周端部より外側に流れ出すといった不良の発生を抑制できる。そのため、半導体パッケージ２００と放熱部材７との接続時に、接続部材８に対して十分な圧力を印加できる。この結果、半導体パッケージ２００と放熱部材７との接着強度不足または接続不良、あるいは接続部材８における樹脂成分の流動に伴うボイドの発生といった問題の発生を抑制できる。このため、上記問題に起因する半導体モジュールにおける絶縁特性または放熱特性の劣化を抑制でき、半導体モジュールの信頼性を向上させることができる。 In this way, since the top 9a of the regulation member 9 surrounding the outer circumference of the connection member 8 is located higher than the surface which is the upper surface of the connection member 8, the resin component flows out from the connection member 8. Can be prevented by the regulating member 9. Therefore, since the heat radiating member 7 and the semiconductor package 200 are connected by the connecting member 8, for example, even if the semiconductor package 200 is pressed toward the heat radiating member 7 and pressure is applied to the connecting member 8, the resin component of the connecting member 8 remains. It is possible to suppress the occurrence of defects such as flowing out from the outer peripheral end of the semiconductor package 200. Therefore, when the semiconductor package 200 and the heat radiating member 7 are connected, a sufficient pressure can be applied to the connecting member 8. As a result, it is possible to suppress the occurrence of problems such as insufficient adhesive strength or poor connection between the semiconductor package 200 and the heat radiating member 7, or generation of voids due to the flow of the resin component in the connecting member 8. Therefore, deterioration of the insulation characteristic or heat dissipation characteristic of the semiconductor module due to the above problem can be suppressed, and the reliability of the semiconductor module can be improved.
　上記半導体モジュール１００において、主面７ａには、規制部材９下に位置する領域に溝部２１が形成されている。規制部材９の一部は溝部２１の内部に位置する。この場合、溝部２１に規制部材９の一部を配置することで、規制部材９を容易に位置決めできる。 In the semiconductor module 100, a groove 21 is formed on the main surface 7a in a region located under the regulation member 9. A part of the regulating member 9 is located inside the groove portion 21. In this case, the regulation member 9 can be easily positioned by arranging a part of the regulation member 9 in the groove portion 21.
　上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含む。この場合、規制部材９と放熱部材７との接続部、あるいは規制部材９と半導体パッケージ２００との接触部に圧力を加えることで、規制部材９と放熱部材７または半導体パッケージ２００とを密着させることができる。この結果、接続部材８の樹脂成分が外部へ流出する経路となり得る規制部材９と放熱部材７との接続界面または規制部材９と半導体パッケージ２００との接触界面における隙間の発生を抑制できる。 In the semiconductor module 100, the material constituting the regulating member 9 includes an elastic body. In this case, the regulating member 9 and the heat radiating member 7 or the semiconductor package 200 are brought into close contact with each other by applying pressure to the connecting portion between the regulating member 9 and the heat radiating member 7 or the contact portion between the regulating member 9 and the semiconductor package 200. Can be done. As a result, it is possible to suppress the occurrence of a gap at the connection interface between the regulation member 9 and the heat radiating member 7, which can be a path for the resin component of the connection member 8 to flow out, or at the contact interface between the regulation member 9 and the semiconductor package 200.
　上記半導体モジュール１００において、規制部材９の比誘電率は接続部材８の比誘電率より大きい。この場合、接続部材８と接触する半導体パッケージ２００の部分から発生する部分放電を抑制できる。この結果、半導体モジュール１００の絶縁特性を向上させることができる。 In the semiconductor module 100, the relative permittivity of the regulating member 9 is larger than the relative permittivity of the connecting member 8. In this case, partial discharge generated from the portion of the semiconductor package 200 in contact with the connecting member 8 can be suppressed. As a result, the insulation characteristics of the semiconductor module 100 can be improved.
　本開示に従った半導体モジュール１００の製造方法は、放熱部材７を準備する工程（Ｓ１０）と、接続部材８を配置する工程（Ｓ２１）と、規制部材９を配置する工程（Ｓ２２）と、半導体パッケージ２００を配置する工程（Ｓ２３）と、放熱部材７と半導体パッケージ２００とを接続する工程（Ｓ３０）とを備える。放熱部材７は主面７ａを有する。接続部材８を配置する工程（Ｓ２１）では、主面７ａ上に接続部材８が配置される。接続部材８は樹脂成分を含む。規制部材９を配置する工程（Ｓ２２）では、主面７ａ上に、接続部材８を囲むように規制部材９が配置される。半導体パッケージ２００を配置する工程（Ｓ２３）では、接続部材８上に、半導体素子１を含む半導体パッケージ２００が配置される。上記接続する工程（Ｓ３０）では、半導体パッケージ２００を接続部材８側に向けて押圧しながら接続部材８を加熱する。この結果、接続部材８によって放熱部材７と半導体パッケージ２００とが接続される。 The method for manufacturing the semiconductor module 100 according to the present disclosure includes a step of preparing the heat radiating member 7 (S10), a step of arranging the connecting member 8 (S21), a step of arranging the regulating member 9 (S22), and a semiconductor. A step of arranging the package 200 (S23) and a step of connecting the heat radiating member 7 and the semiconductor package 200 (S30) are provided. The heat radiating member 7 has a main surface 7a. In the step (S21) of arranging the connecting member 8, the connecting member 8 is arranged on the main surface 7a. The connecting member 8 contains a resin component. In the step (S22) of arranging the regulating member 9, the regulating member 9 is arranged on the main surface 7a so as to surround the connecting member 8. In the step (S23) of arranging the semiconductor package 200, the semiconductor package 200 including the semiconductor element 1 is arranged on the connecting member 8. In the connecting step (S30), the connecting member 8 is heated while pressing the semiconductor package 200 toward the connecting member 8. As a result, the heat radiating member 7 and the semiconductor package 200 are connected by the connecting member 8.
　このようにすれば、規制部材９を配置することで、接続する工程（Ｓ３０）において加圧された接続部材８から樹脂成分が外部へ流れ出すことを抑制できる。このため、接続する工程（Ｓ３０）において接続部材８に対して十分な圧力を印加できる。したがって、接続する工程（Ｓ３０）における半導体パッケージ２００と放熱部材７との接着強度不足または接続不良、あるいは接続部材８における樹脂成分の流動に伴うボイドの発生といった問題の発生を抑制できる。この結果、信頼性の高い半導体モジュール１００を得ることができる。 In this way, by arranging the regulating member 9, it is possible to prevent the resin component from flowing out from the connecting member 8 pressurized in the connecting step (S30). Therefore, a sufficient pressure can be applied to the connecting member 8 in the connecting step (S30). Therefore, it is possible to suppress the occurrence of problems such as insufficient adhesive strength or poor connection between the semiconductor package 200 and the heat radiating member 7 in the connecting step (S30), or the generation of voids due to the flow of the resin component in the connecting member 8. As a result, a highly reliable semiconductor module 100 can be obtained.
　上記半導体モジュール１００の製造方法において、規制部材９を配置する工程（Ｓ２２）は、主面７ａ上に規制部材９となるべき液体を配置する工程（Ｓ２２１）と、当該液体を固化することにより規制部材９を形成する工程（Ｓ２２２）とを含む。 In the manufacturing method of the semiconductor module 100, the step of arranging the regulating member 9 (S22) is regulated by arranging the liquid to be the regulating member 9 on the main surface 7a (S221) and solidifying the liquid. The step (S222) of forming the member 9 is included.
　この場合、規制部材９は放熱部材７の主面７ａに密着した状態で形成される。したがって、放熱部材７と規制部材９との接触界面における隙間の発生を防止できるので、当該隙間を介した接続部材８の樹脂成分の外部への流出を防止できる。 In this case, the regulating member 9 is formed in close contact with the main surface 7a of the heat radiating member 7. Therefore, since it is possible to prevent the generation of a gap at the contact interface between the heat radiating member 7 and the regulating member 9, it is possible to prevent the resin component of the connecting member 8 from flowing out to the outside through the gap.
　実施の形態２．
　＜半導体モジュールの構成＞
　図１０は、実施の形態２に係る半導体モジュールを示す断面模式図である。図１１は、図１０の領域ＸＩを示す拡大断面模式図である。図１０および図１１に示した半導体モジュール１００は、基本的には図１から図３に示した半導体モジュール１００と同様の構成を備えるが、半導体パッケージ２００の構成が図１から図３に示した半導体モジュール１００と異なる。すなわち、図１０および図１１に示した半導体モジュール１００では、半導体パッケージ２００の封止樹脂４の外周部に、規制部材９の頂部９ａと接触する押圧部２２が形成されている。押圧部２２は封止樹脂４の一部である。押圧部２２は封止樹脂４の外周部に形成されたツバ状の部分である。 Embodiment 2.
<Semiconductor module configuration>
FIG. 10 is a schematic cross-sectional view showing the semiconductor module according to the second embodiment. FIG. 11 is an enlarged schematic cross-sectional view showing the region XI of FIG. The semiconductor module 100 shown in FIGS. 10 and 11 basically has the same configuration as the semiconductor module 100 shown in FIGS. 1 to 3, but the configuration of the semiconductor package 200 is shown in FIGS. 1 to 3. It is different from the semiconductor module 100. That is, in the semiconductor module 100 shown in FIGS. 10 and 11, a pressing portion 22 that contacts the top portion 9a of the regulating member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200. The pressing portion 22 is a part of the sealing resin 4. The pressing portion 22 is a brim-shaped portion formed on the outer peripheral portion of the sealing resin 4.
　このように半導体パッケージ２００に押圧部２２が形成されているので、図５の接続工程（Ｓ３０）において、半導体パッケージ２００が接続部材８を介して放熱部材７に圧着される時に、押圧部２２が規制部材９の頂部９ａを押圧する。この結果、規制部材９と、放熱部材７および半導体パッケージ２００との密着性をより向上させることができる。このため、接続部材８からの樹脂成分の流れ出し経路である規制部材９と放熱部材７との間の隙間、または規制部材９と半導体パッケージ２００との間の隙間を小さくできる。したがって、実施の形態１に係る半導体モジュール１００よりも更に安定して接続部材８からの樹脂の流れ出しを防止できる。 Since the pressing portion 22 is formed on the semiconductor package 200 in this way, in the connecting step (S30) of FIG. 5, when the semiconductor package 200 is crimped to the heat radiating member 7 via the connecting member 8, the pressing portion 22 is pressed. The top 9a of the regulating member 9 is pressed. As a result, the adhesion between the regulating member 9, the heat radiating member 7, and the semiconductor package 200 can be further improved. Therefore, the gap between the regulating member 9 and the heat radiating member 7, which is the flow path of the resin component from the connecting member 8, or the gap between the regulating member 9 and the semiconductor package 200 can be reduced. Therefore, it is possible to prevent the resin from flowing out from the connecting member 8 more stably than the semiconductor module 100 according to the first embodiment.
　特に規制部材９が、シリコーンゴムのような弾性体により構成される場合、図５に示した工程（Ｓ３０）において、押圧部２２により規制部材９の頂部９ａを押圧できるので、規制部材９が圧縮変形しながら溝部２１に圧入される。この結果、樹脂流れ出し経路となる上記隙間を完全に埋めることができる。 In particular, when the regulating member 9 is made of an elastic body such as silicone rubber, the regulating member 9 can be compressed because the top portion 9a of the regulating member 9 can be pressed by the pressing portion 22 in the step (S30) shown in FIG. It is press-fitted into the groove 21 while being deformed. As a result, the gap that serves as the resin outflow path can be completely filled.
　＜作用効果＞
　上記半導体モジュール１００において、半導体パッケージ２００は、規制部材９の頂部９ａに接触する押圧部２２を含む。この場合、半導体パッケージ２００の押圧部２２により規制部材９の頂部９ａを押圧することで、規制部材９と半導体パッケージ２００との接触界面および規制部材９と放熱部材７との接触界面における隙間の発生を抑制できる。この結果、上記接触界面の隙間を介した接続部材８の樹脂成分の外部への流出を抑制できる。 <Effect>
In the semiconductor module 100, the semiconductor package 200 includes a pressing portion 22 that contacts the top portion 9a of the regulating member 9. In this case, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat radiating member 7. Can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed.
　上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含むことが好ましい。この場合、上述した押圧部２２により規制部材９と放熱部材７との接続部、あるいは規制部材９と半導体パッケージ２００との接触部に圧力を加えることができる。この結果、規制部材９と放熱部材７または半導体パッケージ２００とを密着させることができる。したがって、接続部材８の樹脂成分が外部へ流出する経路となり得る規制部材９と放熱部材７との接続界面または規制部材９と半導体パッケージ２００との接触界面における隙間の発生を抑制でき、接続部材８から樹脂成分が外部へ流出することを抑制できる。 In the semiconductor module 100, the material constituting the regulating member 9 preferably contains an elastic body. In this case, the pressure portion 22 described above can apply pressure to the connecting portion between the regulating member 9 and the heat radiating member 7, or the contact portion between the regulating member 9 and the semiconductor package 200. As a result, the regulating member 9 and the heat radiating member 7 or the semiconductor package 200 can be brought into close contact with each other. Therefore, it is possible to suppress the generation of a gap at the connection interface between the regulation member 9 and the heat radiating member 7 or the contact interface between the regulation member 9 and the semiconductor package 200, which can be a path for the resin component of the connection member 8 to flow out, and the connection member 8 It is possible to prevent the resin component from flowing out from the outside.
　実施の形態３．
　＜半導体モジュールの構成＞
　図１２は、実施の形態３に係る半導体モジュールを示す断面模式図である。図１２に示した半導体モジュール１００は、基本的には図１０に示した半導体モジュール１００と同様の構成を備えるが、放熱部材７の構成が図１０に示した半導体モジュール１００と異なる。すなわち、図１２に示した半導体モジュール１００では、放熱部材７の主面７ａが、接続部材８下に位置する凸部状の部分である第１領域２５と、第１領域２５を囲むように配置され、表面が第１領域２５より下側に位置する第２領域２３とを含む。規制部材９は第１領域２５の外周を囲むように配置されている。第１領域２５と第２領域２３との間の段差部に規制部材９は接触している。 Embodiment 3.
<Semiconductor module configuration>
FIG. 12 is a schematic cross-sectional view showing the semiconductor module according to the third embodiment. The semiconductor module 100 shown in FIG. 12 basically has the same configuration as the semiconductor module 100 shown in FIG. 10, but the configuration of the heat radiating member 7 is different from that of the semiconductor module 100 shown in FIG. That is, in the semiconductor module 100 shown in FIG. 12, the main surface 7a of the heat radiating member 7 is arranged so as to surround the first region 25, which is a convex portion located under the connecting member 8, and the first region 25. It includes a second region 23 whose surface is located below the first region 25. The regulating member 9 is arranged so as to surround the outer periphery of the first region 25. The regulating member 9 is in contact with the stepped portion between the first region 25 and the second region 23.
　このような構成では、放熱部材７の主面７ａ上に規制部材９を設置する工程を容易に実施できる。特に規制部材９がシリコーンゴムのような弾性体で構成される場合に有利である。すなわち、半導体パッケージ２００が大きく、規制部材９のサイズも大きくなった場合、実施の形態２に係る半導体モジュール１００のように溝部２１へ規制部材９を設置する工程の作業性が悪くなる。これは、弾性体から構成される規制部材９が変形しやすく、短時間で溝部２１に規制部材９を配置することが難しいためである。一方、上記のような放熱部材７の構成とすることで、規制部材９を凸部である第１領域２５の外周部である段差部に沿って配置することができるので、規制部材９を配置する工程（Ｓ２２）の作業性を向上させることができる。 With such a configuration, the step of installing the regulating member 9 on the main surface 7a of the heat radiating member 7 can be easily carried out. This is particularly advantageous when the regulating member 9 is made of an elastic body such as silicone rubber. That is, when the semiconductor package 200 is large and the size of the regulating member 9 is also large, the workability of the process of installing the regulating member 9 in the groove 21 as in the semiconductor module 100 according to the second embodiment is deteriorated. This is because the regulating member 9 made of an elastic body is easily deformed, and it is difficult to arrange the regulating member 9 in the groove 21 in a short time. On the other hand, with the configuration of the heat radiating member 7 as described above, the regulating member 9 can be arranged along the stepped portion which is the outer peripheral portion of the first region 25 which is a convex portion, so that the regulating member 9 is arranged. The workability of the step (S22) to be performed can be improved.
　＜作用効果＞
　上記半導体モジュール１００において、主面７ａには、接続部材８の下に位置する第１領域２５が、当該第１領域２５の外側の第２領域２３より半導体パッケージ２００側に突出した凸部となっている。この場合、凸部である第１領域２５の外周側面に接するように規制部材９を配置することで、規制部材９の位置決めを容易に行うことができる。 <Effect>
In the semiconductor module 100, on the main surface 7a, a first region 25 located below the connecting member 8 is a convex portion protruding toward the semiconductor package 200 from the second region 23 outside the first region 25. ing. In this case, the regulation member 9 can be easily positioned by arranging the regulation member 9 so as to be in contact with the outer peripheral side surface of the first region 25 which is a convex portion.
　上記半導体モジュール１００において、半導体パッケージ２００は、規制部材９の頂部９ａに接触する押圧部２２を含む。この場合、上述した実施の形態２に係る半導体モジュール１００と同様の効果を得ることができる。すなわち、半導体パッケージ２００の押圧部２２により規制部材９の頂部９ａを押圧することで、規制部材９と半導体パッケージ２００との接触界面および規制部材９と放熱部材７との接触界面における隙間の発生を抑制できる。この結果、上記接触界面の隙間を介した接続部材８の樹脂成分の外部への流出を抑制できる。上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含むことが好ましい。 In the semiconductor module 100, the semiconductor package 200 includes a pressing portion 22 that contacts the top 9a of the regulating member 9. In this case, the same effect as that of the semiconductor module 100 according to the second embodiment described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat radiating member 7. Can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed. In the semiconductor module 100, the material constituting the regulating member 9 preferably contains an elastic body.
　実施の形態４．
　＜半導体モジュールの構成＞
　図１３は、実施の形態４に係る半導体モジュールを示す断面模式図である。図１３に示した半導体モジュール１００は、基本的には図１から図３に示した半導体モジュール１００と同様の構成を備えるが、放熱部材７の構成が図１から図３に示した半導体モジュール１００と異なる。すなわち、図１３に示した半導体モジュール１００では、放熱部材７の主面７ａにおいて、接続部材８の厚み以上、規制部材９の厚み以下の深さを有する凹部２４を形成している。凹部２４の外周部に規制部材９が配置されている。凹部２４の内部であって規制部材９の内周側に接続部材８が配置されている。 Embodiment 4.
<Semiconductor module configuration>
FIG. 13 is a schematic cross-sectional view showing the semiconductor module according to the fourth embodiment. The semiconductor module 100 shown in FIG. 13 basically has the same configuration as the semiconductor module 100 shown in FIGS. 1 to 3, but the configuration of the heat radiating member 7 is the semiconductor module 100 shown in FIGS. 1 to 3. Different from. That is, in the semiconductor module 100 shown in FIG. 13, a recess 24 having a depth equal to or greater than the thickness of the connecting member 8 and equal to or less than the thickness of the regulating member 9 is formed on the main surface 7a of the heat radiating member 7. A regulating member 9 is arranged on the outer peripheral portion of the recess 24. The connecting member 8 is arranged inside the recess 24 on the inner peripheral side of the regulating member 9.
　図１３に示した半導体モジュール１００では、放熱部材７と接する規制部材９の下面が、接続部材８の下面（下接着界面）と同一高さの延長線上にある。しかし、接続部材８の樹脂成分が規制部材９の下面側から染み出し、規制部材９の外側へ流れ出したとしても、当該規制部材９の外周側には凹部２４の側壁が存在する。このため、接続部材８からの樹脂成分の流れ出しを最小限に抑えることができる。また、図１２に示した半導体モジュール１００と同様に、図６に示した工程（Ｓ２２）において、規制部材９を放熱部材７の主面７ａ上に配置するときに、凹部２４の外周部に規制部材９を配置すればよいため、当該工程（Ｓ２２）の作業性を向上させることができる。 In the semiconductor module 100 shown in FIG. 13, the lower surface of the regulating member 9 in contact with the heat radiating member 7 is on an extension line having the same height as the lower surface (lower adhesive interface) of the connecting member 8. However, even if the resin component of the connecting member 8 seeps out from the lower surface side of the regulating member 9 and flows out to the outside of the regulating member 9, the side wall of the recess 24 exists on the outer peripheral side of the regulating member 9. Therefore, the outflow of the resin component from the connecting member 8 can be minimized. Further, similarly to the semiconductor module 100 shown in FIG. 12, in the step (S22) shown in FIG. 6, when the regulating member 9 is arranged on the main surface 7a of the heat radiating member 7, the regulating member 9 is restricted to the outer peripheral portion of the recess 24. Since the member 9 may be arranged, the workability of the step (S22) can be improved.
　＜作用効果＞
　上記半導体モジュール１００において、主面７ａには、規制部材９および接続部材８の下に位置する領域に凹部２４が形成されている。規制部材９の一部および接続部材８は凹部２４の内部に位置する。この場合、接続部材８の樹脂成分が規制部材９側に流出しようとして規制部材９に外側に向けた圧力が加えられた場合に、凹部２４の側壁により規制部材９を外周側から支えることができる。このため、規制部材９が上記圧力により変形して樹脂成分が規制部材９の外側へ流れる経路が形成される、といった問題の発生を抑制できる。また、凹部２４の側壁に規制部材９を配置すればよいため、規制部材９を放熱部材７の主面７ａ上に配置する工程（Ｓ２２）の作業性を向上させることができる。 <Effect>
In the semiconductor module 100, a recess 24 is formed on the main surface 7a in a region located below the regulating member 9 and the connecting member 8. A part of the regulating member 9 and the connecting member 8 are located inside the recess 24. In this case, when the resin component of the connecting member 8 tries to flow out to the regulating member 9 side and a pressure is applied to the regulating member 9 outward, the regulating member 9 can be supported from the outer peripheral side by the side wall of the recess 24. .. Therefore, it is possible to suppress the occurrence of a problem that the regulating member 9 is deformed by the pressure to form a path through which the resin component flows to the outside of the regulating member 9. Further, since the regulating member 9 may be arranged on the side wall of the recess 24, the workability of the step (S22) of arranging the regulating member 9 on the main surface 7a of the heat radiating member 7 can be improved.
　実施の形態５．
　＜半導体モジュールの構成＞
　図１４は、実施の形態５に係る半導体モジュールを示す断面模式図である。図１４に示した半導体モジュール１００は、基本的には図１３に示した半導体モジュール１００と同様の構成を備えるが、半導体パッケージ２００の構成が図１３に示した半導体モジュール１００と異なる。すなわち、図１４に示した半導体モジュール１００では、実施の形態２に係る半導体モジュール１００と同様に、半導体パッケージ２００の封止樹脂４の外周部に、規制部材９の頂部９ａと接触する押圧部２２が形成されている。 Embodiment 5.
<Semiconductor module configuration>
FIG. 14 is a schematic cross-sectional view showing the semiconductor module according to the fifth embodiment. The semiconductor module 100 shown in FIG. 14 basically has the same configuration as the semiconductor module 100 shown in FIG. 13, but the configuration of the semiconductor package 200 is different from that of the semiconductor module 100 shown in FIG. That is, in the semiconductor module 100 shown in FIG. 14, similarly to the semiconductor module 100 according to the second embodiment, the pressing portion 22 that contacts the outer peripheral portion of the sealing resin 4 of the semiconductor package 200 with the top portion 9a of the regulating member 9. Is formed.
　＜作用効果＞
　上記半導体モジュール１００は、実施の形態４に係る半導体モジュール１００と同様に放熱部材７の主面７ａに凹部２４が形成されているので、実施の形態４に係る半導体モジュール１００と同様の効果を得ることができる。さらに、上記半導体モジュール１００において、半導体パッケージ２００は、規制部材９の頂部９ａに接触する押圧部２２を含む。このため、上述した実施の形態２に係る半導体モジュール１００と同様の効果を得ることができる。すなわち、半導体パッケージ２００の押圧部２２により規制部材９の頂部９ａを押圧することで、規制部材９と半導体パッケージ２００との接触界面および規制部材９と放熱部材７との接触界面における隙間の発生を抑制できる。この結果、上記接触界面の隙間を介した接続部材８の樹脂成分の外部への流出を抑制できる。上記半導体モジュール１００において、規制部材９を構成する材料は弾性体を含むことが好ましい。 <Effect>
Since the semiconductor module 100 has a recess 24 formed in the main surface 7a of the heat radiating member 7 like the semiconductor module 100 according to the fourth embodiment, the same effect as the semiconductor module 100 according to the fourth embodiment can be obtained. be able to. Further, in the semiconductor module 100, the semiconductor package 200 includes a pressing portion 22 that contacts the top portion 9a of the regulating member 9. Therefore, the same effect as that of the semiconductor module 100 according to the second embodiment described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 with the pressing portion 22 of the semiconductor package 200, a gap is generated at the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat radiating member 7. Can be suppressed. As a result, the outflow of the resin component of the connecting member 8 to the outside through the gap of the contact interface can be suppressed. In the semiconductor module 100, the material constituting the regulating member 9 preferably contains an elastic body.
　実施の形態６．
　本実施の形態は、上述した実施の形態１から実施の形態５に係る半導体モジュールを電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態６として、三相のインバータに本発明を適用した場合について説明する。 Embodiment 6.
In this embodiment, the semiconductor modules according to the first to fifth embodiments described above are applied to a power conversion device. Although the present invention is not limited to a specific power conversion device, the case where the present invention is applied to a three-phase inverter will be described below as a sixth embodiment.
　図１５は、本実施の形態にかかる電力変換装置を適用した電力変換システムの構成を示すブロック図である。 FIG. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.
　図１５に示す電力変換システムは、電源３００、電力変換装置４００、負荷５００から構成される。電源３００は、直流電源であり、電力変換装置４００に直流電力を供給する。電源３００は種々のもので構成することが可能であり、例えば、直流系統、太陽電池、蓄電池で構成することができるし、交流系統に接続された整流回路やＡＣ／ＤＣコンバータで構成することとしてもよい。また、電源３００を、直流系統から出力される直流電力を所定の電力に変換するＤＣ／ＤＣコンバータによって構成することとしてもよい。 The power conversion system shown in FIG. 15 includes a power supply 300, a power conversion device 400, and a load 500. The power supply 300 is a DC power supply, and supplies DC power to the power conversion device 400. The power supply 300 can be configured with various things, for example, it can be configured with a DC system, a solar cell, a storage battery, or it can be configured with a rectifier circuit or an AC / DC converter connected to an AC system. May be good. Further, the power supply 300 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.
　電力変換装置４００は、電源３００と負荷５００の間に接続された三相のインバータであり、電源３００から供給された直流電力を交流電力に変換し、負荷５００に交流電力を供給する。電力変換装置４００は、図１５に示すように、直流電力を交流電力に変換して出力する主変換回路４０１と、主変換回路４０１を制御する制御信号を主変換回路４０１に出力する制御回路４０３とを備えている。 The power conversion device 400 is a three-phase inverter connected between the power supply 300 and the load 500, converts the DC power supplied from the power supply 300 into AC power, and supplies AC power to the load 500. As shown in FIG. 15, the power conversion device 400 has a main conversion circuit 401 that converts DC power into AC power and outputs it, and a control circuit 403 that outputs a control signal for controlling the main conversion circuit 401 to the main conversion circuit 401. And have.
　負荷５００は、電力変換装置４００から供給された交流電力によって駆動される三相の電動機である。なお、負荷５００は特定の用途に限られるものではなく、各種電気機器に搭載された電動機であり、例えば、ハイブリッド自動車や電気自動車、鉄道車両、エレベーター、もしくは、空調機器向けの電動機として用いられる。 The load 500 is a three-phase electric motor driven by AC power supplied from the power converter 400. The load 500 is not limited to a specific application, and is an electric motor mounted on various electric devices. For example, the load 500 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner.
　以下、電力変換装置４００の詳細を説明する。主変換回路４０１は、スイッチング素子と還流ダイオードを備えており（図示せず）、スイッチング素子がスイッチングすることによって、電源３００から供給される直流電力を交流電力に変換し、負荷５００に供給する。主変換回路４０１の具体的な回路構成は種々のものがあるが、本実施の形態にかかる主変換回路４０１は２レベルの三相フルブリッジ回路であり、６つのスイッチング素子とそれぞれのスイッチング素子に逆並列された６つの還流ダイオードから構成することができる。主変換回路４０１の各スイッチング素子や各還流ダイオードは、上述した実施の形態１から実施の形態５のいずれかに相当する半導体モジュール４０２によって構成する。６つのスイッチング素子は２つのスイッチング素子ごとに直列接続され上下アームを構成し、各上下アームはフルブリッジ回路の各相（Ｕ相、Ｖ相、Ｗ相）を構成する。そして、各上下アームの出力端子、すなわち主変換回路４０１の３つの出力端子は、負荷５００に接続される。 The details of the power conversion device 400 will be described below. The main conversion circuit 401 includes a switching element and a freewheeling diode (not shown), and when the switching element switches, the DC power supplied from the power supply 300 is converted into AC power and supplied to the load 500. There are various specific circuit configurations of the main conversion circuit 401, but the main conversion circuit 401 according to the present embodiment is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It can consist of six anti-parallel freewheeling diodes. Each switching element and each freewheeling diode of the main conversion circuit 401 is composed of a semiconductor module 402 corresponding to any one of the above-described first to fifth embodiments. The six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 401 are connected to the load 500.
　また、主変換回路４０１は、各スイッチング素子を駆動する駆動回路（図示なし）を備えているが、駆動回路は半導体モジュール４０２に内蔵されていてもよいし、半導体モジュール４０２とは別に駆動回路を備える構成であってもよい。駆動回路は、主変換回路４０１のスイッチング素子を駆動する駆動信号を生成し、主変換回路４０１のスイッチング素子の制御電極に供給する。具体的には、後述する制御回路４０３からの制御信号に従い、スイッチング素子をオン状態にする駆動信号とスイッチング素子をオフ状態にする駆動信号とを各スイッチング素子の制御電極に出力する。スイッチング素子をオン状態に維持する場合、駆動信号はスイッチング素子の閾値電圧以上の電圧信号（オン信号）であり、スイッチング素子をオフ状態に維持する場合、駆動信号はスイッチング素子の閾値電圧以下の電圧信号（オフ信号）となる。 Further, although the main conversion circuit 401 includes a drive circuit (not shown) for driving each switching element, the drive circuit may be built in the semiconductor module 402, or a drive circuit may be provided separately from the semiconductor module 402. It may be provided. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 401 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 401. Specifically, according to the control signal from the control circuit 403 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element. When the switching element is kept on, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept off, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).
　制御回路４０３は、負荷５００に所望の電力が供給されるよう主変換回路４０１のスイッチング素子を制御する。具体的には、負荷５００に供給すべき電力に基づいて主変換回路４０１の各スイッチング素子がオン状態となるべき時間（オン時間）を算出する。例えば、出力すべき電圧に応じてスイッチング素子のオン時間を変調するＰＷＭ制御によって主変換回路４０１を制御することができる。そして、各時点においてオン状態となるべきスイッチング素子にはオン信号を、オフ状態となるべきスイッチング素子にはオフ信号が出力されるよう、主変換回路４０１が備える駆動回路に制御指令（制御信号）を出力する。駆動回路は、この制御信号に従い、各スイッチング素子の制御電極にオン信号又はオフ信号を駆動信号として出力する。 The control circuit 403 controls the switching element of the main conversion circuit 401 so that the desired power is supplied to the load 500. Specifically, the time (on time) at which each switching element of the main conversion circuit 401 should be in the on state is calculated based on the power to be supplied to the load 500. For example, the main conversion circuit 401 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal) is output to the drive circuit included in the main conversion circuit 401 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Is output. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.
　本実施の形態に係る電力変換装置では、主変換回路４０１のスイッチング素子と還流ダイオードとして実施の形態１から実施の形態５のいずれかにかかる半導体モジュールを適用するため、信頼性の高い電力変換装置を実現することができる。 In the power conversion device according to the present embodiment, since the semiconductor module according to any one of the first to fifth embodiments is applied as the switching element of the main conversion circuit 401 and the freewheeling diode, the power conversion device has high reliability. Can be realized.
　本実施の形態では、２レベルの三相インバータに本発明を適用する例を説明したが、本発明は、これに限られるものではなく、種々の電力変換装置に適用することができる。本実施の形態では、２レベルの電力変換装置としたが３レベルやマルチレベルの電力変換装置であっても構わないし、単相負荷に電力を供給する場合には単相のインバータに本発明を適用しても構わない。また、直流負荷等に電力を供給する場合にはＤＣ／ＤＣコンバータやＡＣ／ＤＣコンバータに本発明を適用することも可能である。 In the present embodiment, an example of applying the present invention to a two-level three-phase inverter has been described, but the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, a two-level power converter is used, but a three-level or multi-level power converter may be used, and when power is supplied to a single-phase load, the present invention is applied to a single-phase inverter. You may apply it. Further, when supplying electric power to a DC load or the like, the present invention can be applied to a DC / DC converter or an AC / DC converter.
　また、本発明を適用した電力変換装置は、上述した負荷が電動機の場合に限定されるものではなく、例えば、放電加工機やレーザー加工機、又は誘導加熱調理器や非接触器給電システムの電源装置として用いることもでき、さらには太陽光発電システムや蓄電システム等のパワーコンディショナーとして用いることも可能である。 Further, the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor, for example, a power source for an electric discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system. It can be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.
　今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。矛盾のない限り、今回開示された実施の形態の少なくとも２つを組み合わせてもよい。本発明の範囲は、上記した説明ではなく請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることを意図される。 It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. As long as there is no contradiction, at least two of the embodiments disclosed this time may be combined. The scope of the present invention is shown by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope of the claims.
　１　半導体素子、２　はんだ、３　ヒートスプレッダ、４　封止樹脂、５　リードフレーム、６　ボンディングワイヤ、７　放熱部材、７ａ　主面、８　接続部材、９　規制部材、９ａ　頂部、２１　溝部、２２　押圧部、２３　第２領域、２４　凹部、２５　第１領域、３１　流出部、４１　接着部材、１００，４０２　半導体モジュール、２００　半導体パッケージ、３００　電源、４００　電力変換装置、４０１　主変換回路、４０３　制御回路、５００　負荷。 1 semiconductor element, 2 solder, 3 heat spreader, 4 sealing resin, 5 lead frame, 6 bonding wire, 7 heat dissipation member, 7a main surface, 8 connection member, 9 regulation member, 9a top, 21 groove, 22 pressing part, 23 2nd area, 24 recesses, 25 1st area, 31 outflow part, 41 adhesive member, 100, 402 semiconductor module, 200 semiconductor package, 300 power supply, 400 power conversion device, 401 main conversion circuit, 403 control circuit, 500 load.

Claims (9)

  1. 　主面を有する放熱部材と、
    　前記主面上に配置され、半導体素子を含む半導体パッケージと、
    　前記放熱部材と前記半導体パッケージとの間に位置するとともに、前記放熱部材と前記半導体パッケージとを接続し、樹脂成分を含む接続部材と、
    　前記接続部材を囲むように前記主面上に配置された規制部材とを備え、
    　前記主面に垂直な方向において、前記規制部材の頂部の位置は、前記接続部材における前記半導体パッケージ側の表面の外周部の位置より前記主面から離れている、半導体モジュール。     A heat dissipation member with a main surface and
    A semiconductor package arranged on the main surface and containing a semiconductor element,
    A connecting member located between the heat radiating member and the semiconductor package, connecting the heat radiating member and the semiconductor package, and containing a resin component.
    A regulating member arranged on the main surface so as to surround the connecting member is provided.
    A semiconductor module in which the position of the top of the regulating member in the direction perpendicular to the main surface is farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side.
  2. 　前記主面には、前記規制部材下に位置する領域に溝部が形成され、
    　前記規制部材の一部は前記溝部の内部に位置する、請求項１に記載の半導体モジュール。     A groove is formed on the main surface in a region located under the regulation member.
    The semiconductor module according to claim 1, wherein a part of the regulating member is located inside the groove.
  3. 　前記主面には、前記規制部材および前記接続部材の下に位置する領域に凹部が形成され、
    　前記規制部材の一部および前記接続部材は前記凹部の内部に位置する、請求項１に記載の半導体モジュール。     A recess is formed on the main surface in a region located below the regulating member and the connecting member.
    The semiconductor module according to claim 1, wherein a part of the regulating member and the connecting member are located inside the recess.
  4. 　前記半導体パッケージは、前記規制部材の前記頂部に接触する押圧部を含む、請求項１から請求項３のいずれか１項に記載の半導体モジュール。 The semiconductor module according to any one of claims 1 to 3, wherein the semiconductor package includes a pressing portion that contacts the top of the regulating member.
  5. 　前記規制部材を構成する材料は弾性体を含む、請求項１から請求項４のいずれか１項に記載の半導体モジュール。 The semiconductor module according to any one of claims 1 to 4, wherein the material constituting the regulatory member includes an elastic body.
  6. 　前記規制部材の比誘電率は前記接続部材の比誘電率より大きい、請求項１から請求項５のいずれか１項に記載の半導体モジュール。 The semiconductor module according to any one of claims 1 to 5, wherein the relative permittivity of the regulating member is larger than the relative permittivity of the connecting member.
  7. 　請求項１記載の半導体モジュールを有し、入力される電力を変換して出力する主変換回路と、
    　前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
    　を備えた電力変換装置。     A main conversion circuit having the semiconductor module according to claim 1 and converting and outputting input power,
    A control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit,
    Power converter equipped with.
  8. 　主面を有する放熱部材を準備する工程と、
    　前記主面上に、樹脂成分を含む接続部材を配置する工程と、
    　前記主面上に、前記接続部材を囲むように規制部材を配置する工程と、
    　前記接続部材上に、半導体素子を含む半導体パッケージを配置する工程と、
    　前記半導体パッケージを前記接続部材側に向けて押圧しながら前記接続部材を加熱することにより、前記接続部材によって前記放熱部材と前記半導体パッケージとを接続する工程と、を備える半導体モジュールの製造方法。     The process of preparing a heat dissipation member with a main surface and
    A step of arranging a connecting member containing a resin component on the main surface, and
    A step of arranging a regulating member on the main surface so as to surround the connecting member, and
    A step of arranging a semiconductor package including a semiconductor element on the connecting member, and
    A method for manufacturing a semiconductor module, comprising a step of connecting the heat radiating member and the semiconductor package by the connecting member by heating the connecting member while pressing the semiconductor package toward the connecting member side.
  9. 　前記規制部材を配置する工程は、
    　前記主面上に前記規制部材となるべき液体を配置する工程と、
    　前記液体を固化することにより前記規制部材を形成する工程とを含む、請求項８に記載の半導体モジュールの製造方法。     The step of arranging the regulation member is
    The process of arranging the liquid to be the regulating member on the main surface, and
    The method for manufacturing a semiconductor module according to claim 8, further comprising a step of forming the regulatory member by solidifying the liquid.
PCT/JP2019/021109 2019-05-28 2019-05-28 Semiconductor module, method for manufacturing semiconductor module, and power conversion apparatus WO2020240699A1 (en)

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