CN113841235A - Semiconductor module, method for manufacturing semiconductor module, and power conversion device - Google Patents
Semiconductor module, method for manufacturing semiconductor module, and power conversion device Download PDFInfo
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- CN113841235A CN113841235A CN201980096496.8A CN201980096496A CN113841235A CN 113841235 A CN113841235 A CN 113841235A CN 201980096496 A CN201980096496 A CN 201980096496A CN 113841235 A CN113841235 A CN 113841235A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 261
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000001105 regulatory effect Effects 0.000 claims abstract description 114
- 229920005989 resin Polymers 0.000 claims abstract description 80
- 239000011347 resin Substances 0.000 claims abstract description 80
- 230000017525 heat dissipation Effects 0.000 claims abstract description 52
- 230000002093 peripheral effect Effects 0.000 claims abstract description 19
- 238000003825 pressing Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims description 3
- 230000000452 restraining effect Effects 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000000806 elastomer Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 description 16
- 238000007789 sealing Methods 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000012071 phase Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000005855 radiation Effects 0.000 description 8
- 239000011344 liquid material Substances 0.000 description 7
- 229910052582 BN Inorganic materials 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A highly reliable semiconductor module and a power conversion device using the semiconductor module are obtained. A semiconductor module (100) is provided with a heat dissipation member (7), a semiconductor package (200), a connection member (8), and a restriction member (9). The connecting member (8) connects the heat dissipating member (7) and the semiconductor package (200). The connecting member (8) contains a resin component. The regulating member (9) is disposed on the main surface (7a) so as to surround the connecting member (8). In the direction perpendicular to the main surface (7a), the position of the top (9a) of the regulating member (9) is farther from the main surface (7a) than the position of the outer peripheral portion of the surface of the connecting member (8) on the semiconductor package (200) side.
Description
Technical Field
The present invention relates to a semiconductor module, a method of manufacturing the semiconductor module, and a power conversion device.
Background
Conventionally, there have been known a semiconductor module in which a semiconductor package including a semiconductor element is connected to a heat dissipating member such as a heat sink by a connecting member such as a resin insulating layer, and a power conversion device using the semiconductor module (see, for example, japanese patent application laid-open No. 2013-110181). In japanese patent laid-open publication No. 2013-110181, a resin thickness regulating member surrounding the outer periphery of a resin insulating layer is disposed between a semiconductor package and a heat dissipating member in order to control the thickness of a connecting member. With such a structure, it is possible to stably ensure electrical insulation and thermal conductivity in the resin insulation layer in japanese patent application laid-open No. 2013-110181.
Patent document 1: japanese patent laid-open publication No. 2013-110181
Disclosure of Invention
Problems to be solved by the invention
In the above-described conventional semiconductor module, the positions of the upper and lower surfaces of the resin thickness regulating member are the same as the positions of the upper and lower surfaces of the resin insulating layer. That is, the first connection interface of the upper surface of the resin thickness restriction member and the lower surface of the semiconductor package and the connection interface of the resin insulation layer and the semiconductor package are located on the same plane. In addition, the second connection interface of the lower surface of the resin thickness restriction member and the upper surface of the heat dissipation member and the connection interface of the resin insulation layer and the heat dissipation member are located on the same plane. Here, when the semiconductor package is bonded to the heat dissipation member by the resin insulation layer, the resin insulation layer is heated while being pressurized. At this time, the resin component of the resin insulation layer may flow out to the outer peripheral side of the semiconductor package via the first connection interface or the second connection interface in the resin thickness regulating member.
In this case, since the resin component is greatly moved in the resin insulation layer as the connection member, there is a possibility that a void or a crack is generated in the resin insulation layer. The occurrence of such voids or cracks in the connecting member deteriorates the insulation and heat dissipation properties of the semiconductor module, and as a result, causes a decrease in the reliability of the semiconductor module.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a highly reliable semiconductor module and a power conversion device using the semiconductor module.
Means for solving the problems
The semiconductor module according to the present disclosure includes a heat dissipation member, a semiconductor package, a connection member, and a restriction member. The heat dissipation member has a main surface. The semiconductor package is disposed on the main surface. The semiconductor package includes a semiconductor element. The connecting member is located between the heat dissipation member and the semiconductor package. The connection member connects the heat dissipation member with the semiconductor package. The connecting member contains a resin component. The regulating member is disposed on the main surface so as to surround the connecting member. The top portion of the regulating member is located farther from the main surface than the outer peripheral portion of the surface of the connection member on the semiconductor package side in a direction perpendicular to the main surface.
The power conversion device according to the present disclosure includes a main conversion circuit and a control circuit. The main converter circuit includes the semiconductor module, and converts the input power and outputs the converted power. The control circuit outputs a control signal for controlling the main converter circuit to the main converter circuit.
The method for manufacturing a semiconductor module according to the present disclosure includes a step of preparing a heat dissipation member, a step of disposing a connection member, a step of disposing a restriction member, a step of disposing a semiconductor package, and a step of connecting the heat dissipation member and the semiconductor package. The heat dissipation member has a main surface. In the step of disposing the connecting member, the connecting member is disposed on the main surface. The connecting member contains a resin component. In the step of disposing the regulating member, the regulating member is disposed on the main surface so as to surround the connecting member. In the step of disposing the semiconductor package, the semiconductor package including the semiconductor element is disposed on the connection member. In the connecting step, the connecting member is heated while the semiconductor package is pressed against the connecting member. As a result, the heat dissipation member and the semiconductor package are connected by the connection member.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the above, since the top portion of the regulating member disposed so as to surround the connecting member is located farther from the main surface than the position of the outer peripheral portion of the surface of the connecting member on the semiconductor package side, when the semiconductor package is connected to the heat dissipating member by the connecting member, it is possible to suppress occurrence of a problem such as leakage of a part of the connecting member to the outside of the semiconductor package. As a result, a highly reliable semiconductor module and a power conversion device using the semiconductor module are obtained.
Drawings
Fig. 1 is a schematic cross-sectional view showing a semiconductor module according to embodiment 1.
Fig. 2 is a schematic sectional view showing a semiconductor package constituting the semiconductor module shown in fig. 1.
Fig. 3 is a schematic plan view of the semiconductor module shown in fig. 1.
Fig. 4 is a schematic cross-sectional view showing a modification of the semiconductor module shown in fig. 1.
Fig. 5 is a flowchart for explaining a method of manufacturing the semiconductor module shown in fig. 1.
Fig. 6 is a flowchart for explaining the arrangement steps of the method for manufacturing the semiconductor module shown in fig. 5.
Fig. 7 is a flowchart for explaining an example of a step of disposing the regulating member in the method of manufacturing the semiconductor module shown in fig. 6.
Fig. 8 is a schematic cross-sectional view showing a semiconductor module as a reference example.
Fig. 9 is a schematic cross-sectional view showing a semiconductor module as a reference example.
Fig. 10 is a schematic cross-sectional view showing a semiconductor module according to embodiment 2.
Fig. 11 is an enlarged cross-sectional view showing a region XI of fig. 10.
Fig. 12 is a schematic cross-sectional view showing a semiconductor module according to embodiment 3.
Fig. 13 is a schematic cross-sectional view showing a semiconductor module according to embodiment 4.
Fig. 14 is a schematic cross-sectional view showing a semiconductor module according to embodiment 5.
Fig. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to embodiment 6 is applied.
(description of reference numerals)
1: a semiconductor element; 2: welding flux; 3: a heat sink; 4: a sealing resin; 5: a lead frame; 6: a bonding wire; 7: a heat dissipating member; 7 a: a major surface; 8: a connecting member; 9: a restraining member; 9 a: a top portion; 21: a groove part; 22: a pressing section; 23: a second region; 24: a recess; 25: a first region; 31: an outflow section; 41: an adhesive member; 100. 402, a step of: a semiconductor module; 200: a semiconductor package; 300: a power source; 400: a power conversion device; 401: a main conversion circuit; 403: a control circuit; 500: and (4) loading.
Detailed Description
Hereinafter, embodiments of the present invention will be described. Note that the same components are assigned the same reference numerals, and description thereof will not be repeated.
< Structure of semiconductor Module >
Fig. 1 is a schematic cross-sectional view showing a semiconductor module 100 according to embodiment 1. Fig. 2 is a schematic cross-sectional view showing a semiconductor package 200 constituting the semiconductor module 100 shown in fig. 1. Fig. 3 is a schematic plan view of the semiconductor module shown in fig. 1.
The semiconductor module 100 shown in fig. 1 to 3 is, for example, a power semiconductor module, and mainly includes a heat dissipation member 7, a semiconductor package 200, a connection member 8, and a restriction member 9. The semiconductor package 200 is connected to the heat dissipation member 7 through the connection member 8. The restriction member 9 is arranged to surround the outer peripheral portion of the connection member 8. The restricting member 9 is, for example, a resin outflow preventing member. In the direction perpendicular to main surface 7a, top portion 9a of regulation member 9 is located farther from main surface 7a than the position of the outer peripheral portion of the surface of connection member 8 on the semiconductor package 200 side.
The heat radiation member 7 as a heat radiation fin has a main surface 7 a. The heat radiation member 7 includes, for example, metal such as aluminum or copper. In all the figures of the embodiments of the present specification, the heat dissipating member 7 is a flat block, but a portion other than the main surface 7a to which the semiconductor package 200 is bonded may be processed into a fin shape or an uneven shape to increase a heat dissipating area.
The semiconductor package 200 is disposed on the main surface 7a of the heat dissipation member 7. The semiconductor package 200 mainly includes a semiconductor element 1, a heat spreader 3, a lead frame 5, a bonding wire 6, and a sealing resin 4. A semiconductor element 1 is connected to the upper surface of the heat sink 3 via a solder 2. The semiconductor element 1 is connected to the lead frame 5 by bonding wires 6. The sealing resin 4 is formed to arrange the heat spreader 3, the semiconductor element 1, a part of the lead frame 5, and the bonding wire 6 therein. The sealing resin 4 seals the semiconductor element 1, a part of the lead frame 5, a part of the heat spreader 3, and the bonding wires 6.
The Semiconductor element 1 is a power Semiconductor element, and as the Semiconductor element 1, a Semiconductor element for power control such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor), a freewheeling diode, or the like is used. The heat sink 3 is made of a metal having excellent heat dissipation properties, such as copper or aluminum. As described above, the solder 2 is used as a connecting material for connecting the heat spreader 3 and the semiconductor element 1, but the connecting material is not limited thereto. Instead of the solder 2, sintered silver or a conductive adhesive may be used as a connecting material. The semiconductor element 1 and the heat spreader 3 may also be bonded using a liquid phase diffusion bonding technique.
The lead frame 5 is patterned into external terminals for input and output of current and voltage. The lead frame 5 generally includes metal such as copper, as in the heat spreader 3. A part of the lead frame 5 is joined to the heat spreader 3 by solder. The other part of the lead frame 5 is electrically connected to the semiconductor element 1 by bonding wires 6. The bonding wire 6 is, for example, an aluminum alloy or copper alloy wire having a wire diameter of 0.1mm to 0.5 mm.
The material of the solder as the connecting material for joining the lead frame 5 and the heat sink 3 may be the same as the material of the solder 2 for connecting the semiconductor element 1 and the heat sink 3. The connecting material for bonding the lead frame 5 and the heat spreader 3 may be sintered silver or a conductive adhesive. The lead frame 5 and the heat spreader 3 may also be bonded using a liquid phase diffusion bonding technique.
In the semiconductor package 200, the semiconductor element 1 and the lead frame 5 are electrically connected by the bonding wire 6, but other configurations may be used. For example, it is also possible to extend the bonding strip or lead frame 5 onto the semiconductor element 1. The bonding tape or lead frame 5 may be connected to the semiconductor element 1 by solder, sintered silver, or a conductive adhesive. The bonding tape or lead frame 5 may also be directly bonded to the semiconductor element 1 using a liquid phase diffusion bonding technique. The lead frame 5 and the heat sink 3 may be integrally formed by etching or molding a metal plate. That is, the lead frame 5 and the heat sink 3 may be an integrated member.
The sealing resin 4 is arranged to cover each member described above. That is, the entire surfaces of the semiconductor element 1, the solder 2, the heat spreader 3, and the bonding wires 6 are covered with the sealing resin 4. However, the lead frame 5 extending outward from above the heat sink 3 is covered with the sealing resin 4 only at a portion thereof, i.e., at an inner portion of the lead frame 5. The other portion of the lead frame 5, particularly, the portion outside the lead frame 5 is not covered with the sealing resin 4. This allows the outer portion of the lead frame 5, which is not covered with the sealing resin 4, to be electrically connected to the outside of the semiconductor module 100. The bottom surface of the heat sink 3 is not covered with the sealing resin 4 and is exposed to the heat sink 3. The bottom surface of the heat sink 3 is connected to the heat radiation member 7 via a connection member 8. With such a configuration, heat generated from the semiconductor element 1 is released to the outside of the semiconductor package 200 via the solder 2 and the heat spreader 3.
As the sealing resin 4, any resin can be used, and for example, an epoxy resin subjected to transfer molding can be used. By covering the periphery of the semiconductor element 1 with the sealing resin 4, the semiconductor element 1 can be prevented from being affected by external environments such as dust and humidity. As a result, the reliability of the semiconductor package 200 can be improved.
The connection member 8 is located between the heat dissipation member 7 and the semiconductor package 200. The connection member 8 connects the heat dissipation member 7 with the semiconductor package 200. The connecting member 8 is, for example, a resin insulating layer. The connecting member 8 is preferably a resin layer having excellent thermal conductivity and electrical insulation properties. As a member satisfying such a demand, a thermally conductive sheet in which an inorganic filler is dispersed in a cured product of a thermosetting resin is widely used. That is, the above-described heat conductive sheet can be used as the connecting member 8. Examples of the inorganic filler used for the heat conductive sheet include alumina, boron nitride, silica, and aluminum nitride. In particular, when high thermal conductivity and insulation are required, boron nitride is often used as the inorganic filler. Boron nitride is excellent in thermal conductivity and electrical insulation properties, and also excellent in chemical stability. Also, boron nitride is non-toxic and also relatively inexpensive.
As the connecting member 8, a member in which a layer obtained by compression sintering an inorganic material such as boron nitride is impregnated with a thermosetting resin may be used. As the connecting member 8, a layer of thermosetting insulating resin to which no grease or inorganic filler is added may be used, although heat dissipation is lower than that of the above-described heat conductive sheet.
The semiconductor package 200 configured as described above transfers heat generated from the semiconductor element 1 during operation to the heat dissipation member 7 via the solder 2, the heat sink 3, and the connection member 8. The heat radiation member 7 is made of a metal having excellent heat radiation performance, such as copper or aluminum, as in the case of the heat sink 3.
The regulating member 9 is disposed on the main surface 7a so as to surround the connecting member 8. The regulating member 9 is fixed in a state where a lower portion of the regulating member 9 is fitted in a groove portion 21 formed in the main surface 7 a. The groove 21 is formed to surround the semiconductor package 200 at the main surface 7a of the heat dissipation member 7 in a plan view. The regulating member 9 may be a metal frame or a resin frame such as PPS (polyphenylene sulfide) resin or PBT (polybutylene terephthalate) resin. The restricting member 9 may be a frame body including an elastic body such as silicone rubber. In the case where the frame body including the elastic body is used as the regulating member 9 in this way, even if there is a dimensional variation of the groove portion 21, the regulating member 9 can be reliably fitted into the groove portion 21. The method of fixing the regulating member 9 to the groove portion 21 may be only fitting, but other methods may be used. For example, in order to improve the fixing strength of the regulating member 9 to the groove portion 21, the regulating member 9 is bonded to the groove portion 21 via a bonding member 41 such as an adhesive as shown in fig. 4. Here, fig. 4 is a schematic cross-sectional view showing a modification of the semiconductor module shown in fig. 1. The semiconductor module 100 shown in fig. 4 basically has the same configuration as the semiconductor module 100 shown in fig. 1 to 3, but differs from the semiconductor module 100 shown in fig. 1 to 3 in that the regulating member 9 is fixed to the groove portion 21 by the adhesive member 41. In the semiconductor module 100 shown in fig. 4, the adhesive member 41 adheres at least the bottom surface of the regulating member 9 to the bottom surface and a part of the side surface of the groove 21.
As a method of molding the regulating member 9 fixed to the heat radiating member 7, the regulating member 9 formed in a frame shape in advance as described above may be provided and fixed to the main surface 7a of the heat radiating member 7. In order to form the regulating member 9, a liquid material, which is a liquid material to be the regulating member 9, may be disposed in the groove portion 21 of the heat radiating member 7, and then the liquid material may be cured. As a method for disposing the liquid material inside the groove portion 21, any method can be used, and for example, a coating method or a printing method can be used. The relative permittivity ∈ of the regulating member 9 may be set to be larger than the relative permittivity ∈ of the connecting member 8. In this case, partial discharge at the end of the heat sink 3 during operation of the semiconductor module 100 can be suppressed. As a result, the insulation of the semiconductor module 100 can be improved.
< method for manufacturing semiconductor Module >
Fig. 5 is a flowchart for explaining a method of manufacturing the semiconductor module shown in fig. 1. Fig. 6 is a flowchart for explaining the arrangement steps of the method for manufacturing the semiconductor module shown in fig. 5. Fig. 7 is a flowchart for explaining an example of a step of disposing the regulating member in the method of manufacturing the semiconductor module shown in fig. 6. Fig. 8 and 9 are schematic cross-sectional views showing a semiconductor module as a reference example.
Referring to fig. 5 and 6, in the method of manufacturing the semiconductor module 100, first, a preparation step is performed (S10). In this step (S10), the heat dissipation member 7, the connection member 8, the regulating member 9, and the semiconductor package 200 are prepared. As shown in fig. 1, a groove 21 is formed in advance in the main surface 7a of the heat dissipating member 7.
Next, the arrangement step (S20) is performed. In this step (S20), a laminate is obtained in which the connection member 8 and the semiconductor package 200 are stacked and arranged on the main surface 7a of the heat dissipation member 7. At this time, the regulating member 9 is disposed around the connecting member 8.
Specifically, in this step (S20), a step (S21) of disposing the connecting member is performed as shown in fig. 6. In the step (S21) of forming the resin insulating layer, the connecting member 8 containing a resin component is disposed on the main surface 7a of the heat radiating member 7. Next, a step of disposing a regulating member is performed (S22). In this step (S22), the regulating member 9 is disposed in the groove portion 21 in the main surface 7a of the heat radiating member 7. The restricting member 9 is configured to surround the periphery of the connecting member 8.
In this step (S22), the process shown in fig. 7 may be used. Specifically, a step of disposing the liquid in the region where the regulating member 9 should be disposed is performed (S221). In this step (S221), for example, the liquid material to be the regulating member 9 is disposed inside the groove portion 7a of the main surface 7a of the heat radiating member 7. Next, a curing step (S222) is performed. In this step (S222), the liquid material is cured by a treatment such as heating or exposure. In this way, the regulating member 9 is disposed on the main surface 7a of the heat radiating member 7. The restricting member 9 may be formed by repeating the steps (S221) and (S222) a plurality of times and laminating a plurality of layers obtained by curing the liquid material.
Next, a step of disposing the semiconductor package is performed (S23). In this step (S23), the semiconductor package 200 is mounted on the connection member 8.
Next, as shown in fig. 5, a connection step is performed (S30). In this step (S30), the connecting member 8 is heated while being pressed from above the semiconductor package 200 in a direction toward the heat dissipation member 7, for example, using a press machine capable of heating and pressing. The heating conditions may be, for example, temperature conditions of 100 ℃ to 250 ℃. The pressure as the pressurizing condition may be, for example, 0.5MPa to 20 MPa.
Here, when the pressure in the above-described step (S30) is high, in a configuration in which the regulating member 9 is not disposed, the resin (for example, thermosetting resin) forming part of the connecting member 8 may overflow out of the adhesive surface of the semiconductor package 200 to form the outflow portion 31 as shown in fig. 8. If such outflow portion 31 becomes large, the distance H between the semiconductor package 200 and the heat dissipation member 7 becomes smaller than the design value. As a result, the insulation property between the heat sink 3 and the heat radiating member 7 is deteriorated. When the pressure is high, the resin moves more greatly in the connecting member 8. Therefore, voids (air bubbles) and cracks occur more frequently in the connecting member 8. In this case as well, the insulating property between the heat sink 3 and the heat radiating member 7 deteriorates. Further, voids and cracks in the connecting member 8 may cause deterioration of heat dissipation characteristics.
In the configuration in which the regulating member 9 is not disposed, when the pressure applied to the semiconductor package 200 in the step (S30) is small, the adhesive strength between the connecting member 8 and the semiconductor package 200 may not be sufficiently obtained. In this case, in a reliability test such as a temperature cycle of the semiconductor module 100, as shown in fig. 9, peeling occurs at the bonding interface between the connection member 8 and the semiconductor package 200. The occurrence of such peeling also causes deterioration of insulation properties and heat dissipation properties.
Therefore, in the above-described method for manufacturing a semiconductor module according to the present embodiment, by including the step of disposing the regulating member 9 as the resin outflow preventing member (S22), the regulating member 9 is disposed so that the position of the upper and lower surfaces of the regulating member 9 does not become the same height as the upper and lower surfaces of the connecting member 8. From a different viewpoint, the side face of the restricting member 9 faces the side end face of the linking member 8, and the thickness of the restricting member 9 is thicker than the thickness of the linking member 8. As a result, the resin outflow path from the connecting member 8 can be prevented from being linear as in the structures shown in fig. 8 and 9. As a result, in the step (S30), the pressure necessary to sufficiently increase the strength (bonding strength) of the joint between the semiconductor package 200 and the heat dissipation member 7 by the connection member 8 can be applied, and the resin outflow portion 31 shown in fig. 8 can be prevented from being generated.
That is, when the connecting member 8 is heated while applying pressure to the semiconductor package 200 in the step (S30), the resin component in the connecting member 8 can be prevented from flowing out of the adhesive surface by the regulating member 9. In particular, in the case where the connection member 8 has a structure in which a thermosetting resin is impregnated into a layer obtained by compression-sintering an inorganic material such as boron nitride, the occurrence of the flow-out portion 31 shown in fig. 8 can be suppressed, and a sufficient pressure can be applied to the semiconductor package 200. As a result, the adhesive strength between the semiconductor package 200 and the heat dissipation member 7 can be maintained sufficiently high. Therefore, the semiconductor module 100 having high reliability and excellent insulation characteristics and heat dissipation characteristics can be obtained.
< Effect >
The semiconductor module 100 according to the present disclosure includes a heat dissipation member 7, a semiconductor package 200, a connection member 8, and a restriction member 9. The heat discharging member 7 has a main surface 7 a. The semiconductor package 200 is disposed on the main surface 7 a. The semiconductor package 200 includes a semiconductor element 1. The connection member 8 is located between the heat dissipation member 7 and the semiconductor package 200. The connection member 8 connects the heat dissipation member 7 with the semiconductor package 200. The connecting member 8 contains a resin component. The regulating member 9 is disposed on the main surface 7a so as to surround the connecting member 8. In the direction perpendicular to main surface 7a, top portion 9a of regulation member 9 is located farther from main surface 7a than the position of the outer peripheral portion of the surface of connection member 8 on the semiconductor package 200 side.
In this way, since the top portion 9a of the regulating member 9 surrounding the outer periphery of the connecting member 8 is located higher than the surface serving as the upper surface of the connecting member 8, the resin component can be prevented from flowing out from the connecting member 8 to the outside by the regulating member 9. Therefore, even if the semiconductor package 200 is pressed against the heat dissipation member 7 side to apply pressure to the connection member 8 in order to connect the heat dissipation member 7 and the semiconductor package 200 by the connection member 8, for example, it is possible to suppress occurrence of a trouble such as the resin component of the connection member 8 flowing out to the outside of the outer peripheral end portion of the semiconductor package 200. Therefore, when the semiconductor package 200 is connected to the heat dissipation member 7, a sufficient pressure can be applied to the connection member 8. As a result, problems such as insufficient adhesion strength between the semiconductor package 200 and the heat dissipating member 7, poor connection, and generation of voids due to the flow of the resin component in the connecting member 8 can be suppressed. Therefore, deterioration of the insulation property or the heat dissipation property in the semiconductor module due to the above-described problems can be suppressed, and the reliability of the semiconductor module can be improved.
In the semiconductor module 100, the main surface 7a is formed with a groove 21 in a region located below the regulating member 9. A part of the regulating member 9 is located inside the groove portion 21. In this case, the positioning of the regulating member 9 can be easily performed by disposing a part of the regulating member 9 in the groove portion 21.
In the semiconductor module 100 described above, the material constituting the regulating member 9 includes an elastic body. In this case, by applying pressure to the connection portion between the regulating member 9 and the heat dissipating member 7 or the contact portion between the regulating member 9 and the semiconductor package 200, the regulating member 9 can be brought into close contact with the heat dissipating member 7 or the semiconductor package 200. As a result, it is possible to suppress the occurrence of a gap in the connection interface between the regulating member 9 and the heat dissipating member 7 or the contact interface between the regulating member 9 and the semiconductor package 200, which may serve as a path through which the resin component of the connecting member 8 flows out to the outside.
In the semiconductor module 100, the relative permittivity of the regulating member 9 is larger than the relative permittivity of the connecting member 8. In this case, the partial discharge generated from the portion of the semiconductor package 200 in contact with the connection member 8 can be suppressed. As a result, the insulation characteristics of the semiconductor module 100 can be improved.
The method for manufacturing the semiconductor module 100 according to the present disclosure includes: a step (S10) for preparing a heat radiation member (7); a step (S21) of disposing the connecting member 8; a step (S22) of disposing the regulating member 9; a step (S23) of disposing the semiconductor package 200; and a step (S30) of connecting the heat dissipation member 7 to the semiconductor package 200. The heat discharging member 7 has a main surface 7 a. In the step of disposing the connecting member 8 (S21), the connecting member 8 is disposed on the main surface 7 a. The connecting member 8 contains a resin component. In the step of disposing the regulating member 9 (S22), the regulating member 9 is disposed on the main surface 7a so as to surround the connecting member 8. In the step of disposing the semiconductor package 200 (S23), the semiconductor package 200 including the semiconductor element 1 is disposed on the connection member 8. In the above-described connecting step (S30), the connecting member 8 is heated while the semiconductor package 200 is pushed toward the connecting member 8. As a result, the heat dissipation member 7 and the semiconductor package 200 are connected by the connection member 8.
By disposing the regulating member 9 in this way, the resin component can be prevented from flowing out of the pressurized connecting member 8 to the outside in the connecting step (S30). Therefore, in the step of connecting (S30), a sufficient pressure can be applied to the connecting member 8. Therefore, it is possible to suppress the occurrence of problems such as insufficient adhesion strength between the semiconductor package 200 and the heat dissipation member 7, poor connection, or the occurrence of voids due to the flow of the resin component in the connection member 8 in the connection step (S30). As a result, the semiconductor module 100 with high reliability can be obtained.
In the method for manufacturing the semiconductor module 100, the step (S22) of disposing the regulating member 9 includes: a step (S221) of disposing a liquid to be the regulating member 9 on the main surface 7 a; and a step (S222) of forming the regulating member 9 by solidifying the liquid.
In this case, the regulating member 9 is formed in a state of being in close contact with the main surface 7a of the heat radiating member 7. Therefore, the generation of a gap in the contact interface between the heat dissipation member 7 and the regulating member 9 can be prevented, and therefore the resin component of the connecting member 8 can be prevented from flowing out to the outside through the gap.
< Structure of semiconductor Module >
Fig. 10 is a schematic cross-sectional view showing a semiconductor module according to embodiment 2. Fig. 11 is an enlarged cross-sectional view showing a region XI of fig. 10. The semiconductor module 100 shown in fig. 10 and 11 basically has the same structure as the semiconductor module 100 shown in fig. 1 to 3, but the structure of the semiconductor package 200 is different from the semiconductor module 100 shown in fig. 1 to 3. That is, in the semiconductor module 100 shown in fig. 10 and 11, the pressing portion 22 that comes into contact with the top portion 9a of the regulating member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200. The pressing portion 22 is a part of the sealing resin 4. The pressing portion 22 is a flange-like portion formed on the outer peripheral portion of the sealing resin 4.
Since the pressing portion 22 is formed in the semiconductor package 200 in this way, the pressing portion 22 presses the top portion 9a of the regulating member 9 when the semiconductor package 200 is pressed against the heat dissipation member 7 via the connection member 8 in the connection step (S30) of fig. 5. As a result, the adhesion between the regulating member 9 and the heat dissipating member 7 and the semiconductor package 200 can be further improved. Therefore, the gap between the regulating member 9 and the heat dissipating member 7, or the gap between the regulating member 9 and the semiconductor package 200, which is a path from the connecting member 8 through which the resin component flows out, can be reduced. Therefore, the resin can be more stably prevented from flowing out of the connecting member 8 than the semiconductor module 100 according to embodiment 1.
In particular, when the regulating member 9 includes an elastic body such as silicone rubber, the top portion 9a of the regulating member 9 can be pressed by the pressing portion 22 in the step (S30) shown in fig. 5, and therefore the regulating member 9 is pressed into the groove portion 21 while being compressed and deformed. As a result, the gap serving as the resin outflow path can be completely filled.
< Effect >
In the semiconductor module 100 described above, the semiconductor package 200 includes the pressing portion 22 that contacts the top portion 9a of the regulating member 9. In this case, by pressing the top portion 9a of the regulating member 9 by the pressing portion 22 of the semiconductor package 200, it is possible to suppress the generation of gaps in the contact interface of the regulating member 9 and the semiconductor package 200 and the contact interface of the regulating member 9 and the heat dissipation member 7. As a result, the resin component of the connecting member 8 can be prevented from flowing out to the outside through the gap at the contact interface.
In the semiconductor module 100 described above, it is preferable that the material constituting the regulating member 9 includes an elastic body. In this case, the pressing portion 22 described above can apply pressure to the connection portion between the regulating member 9 and the heat radiating member 7 or the contact portion between the regulating member 9 and the semiconductor package 200. As a result, the regulating member 9 can be brought into close contact with the heat radiating member 7 or the semiconductor package 200. Therefore, it is possible to suppress the occurrence of a gap in the connection interface between the regulating member 9 and the heat dissipating member 7 or the contact interface between the regulating member 9 and the semiconductor package 200, which may be a path through which the resin component of the connecting member 8 flows out to the outside, and to suppress the resin component from flowing out from the connecting member 8 to the outside.
< Structure of semiconductor Module >
Fig. 12 is a schematic cross-sectional view showing a semiconductor module according to embodiment 3. The semiconductor module 100 shown in fig. 12 basically has the same configuration as the semiconductor module 100 shown in fig. 10, but the configuration of the heat dissipation member 7 is different from the semiconductor module 100 shown in fig. 10. That is, in the semiconductor module 100 shown in fig. 12, the main surface 7a of the heat dissipation member 7 includes a first region 25 which is a convex portion located below the connection member 8, and a second region 23 which is arranged so as to surround the first region 25 and has a surface located below the first region 25. The restricting member 9 is configured to surround the outer periphery of the first region 25. The restriction member 9 is in contact with a step portion between the first region 25 and the second region 23.
In such a configuration, the step of providing the regulating member 9 on the main surface 7a of the heat radiating member 7 can be easily performed. This is particularly advantageous in the case where the restriction member 9 comprises an elastomer such as silicone rubber. That is, when the semiconductor package 200 is large and the size of the regulating member 9 is also large, the workability of the step of providing the regulating member 9 to the groove portion 21 is deteriorated as in the semiconductor module 100 according to embodiment 2. This is because the restricting member 9 made of an elastic body is easily deformed, and it is difficult to dispose the restricting member 9 in the groove portion 21 in a short time. On the other hand, by configuring the heat radiation member 7 as described above, the restriction member 9 can be disposed along the step portion which is the outer peripheral portion of the first region 25 which is the convex portion, and therefore, the workability of the step (S22) of disposing the restriction member 9 can be improved.
< Effect >
In the semiconductor module 100, the first region 25 located below the connection member 8 on the main surface 7a is a convex portion protruding toward the semiconductor package 200 side with respect to the second region 23 outside the first region 25. In this case, the regulating member 9 is disposed so as to contact the outer peripheral side surface of the first region 25, which is a convex portion, whereby the regulating member 9 can be easily positioned.
In the semiconductor module 100 described above, the semiconductor package 200 includes the pressing portion 22 that contacts the top portion 9a of the regulating member 9. In this case, the same effects as those of the semiconductor module 100 according to embodiment 2 described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 by the pressing portion 22 of the semiconductor package 200, it is possible to suppress the occurrence of gaps in the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat dissipating member 7. As a result, the resin component of the connecting member 8 can be prevented from flowing out to the outside through the gap at the contact interface. In the semiconductor module 100 described above, it is preferable that the material constituting the regulating member 9 includes an elastic body.
< Structure of semiconductor Module >
Fig. 13 is a schematic cross-sectional view showing a semiconductor module according to embodiment 4. The semiconductor module 100 shown in fig. 13 basically has the same structure as the semiconductor module 100 shown in fig. 1 to 3, but the structure of the heat dissipation member 7 is different from the semiconductor module 100 shown in fig. 1 to 3. That is, in the semiconductor module 100 shown in fig. 13, the recess 24 having a depth equal to or greater than the thickness of the connection member 8 and equal to or less than the thickness of the regulation member 9 is formed on the main surface 7a of the heat dissipation member 7. The restricting member 9 is disposed on the outer peripheral portion of the recess 24. The connecting member 8 is disposed inside the recess 24 and on the inner peripheral side of the regulating member 9.
In the semiconductor module 100 shown in fig. 13, the lower surface of the regulating member 9 in contact with the heat radiating member 7 is located on an extension line having the same height as the lower surface (lower bonding interface) of the connecting member 8. However, even if the resin component of the connecting member 8 seeps out from the lower surface side of the regulating member 9 and flows out to the outside of the regulating member 9, the side wall of the recess 24 is present on the outer peripheral side of the regulating member 9. Therefore, the outflow of the resin component from the connecting member 8 can be suppressed to the minimum. In addition, similarly to the semiconductor module 100 shown in fig. 12, in the step (S22) shown in fig. 6, when the regulating member 9 is disposed on the main surface 7a of the heat radiating member 7, the regulating member 9 may be disposed on the outer peripheral portion of the concave portion 24, and therefore, the workability in this step (S22) can be improved.
< Effect >
In the semiconductor module 100, the main surface 7a is formed with the recess 24 in a region located below the regulating member 9 and the connecting member 8. A part of the restricting member 9 and the connecting member 8 are located inside the recess 24. In this case, when the resin component of the connecting member 8 is about to flow out to the restricting member 9 side and the restricting member 9 is pressed outward, the restricting member 9 can be supported from the outer peripheral side by the side wall of the recess 24. Therefore, it is possible to suppress the occurrence of a problem that the regulating member 9 is deformed by the pressure to form a path through which the resin component flows to the outside of the regulating member 9. Further, since the regulating member 9 is only required to be disposed on the side wall of the recess 24, the workability of the step (S22) of disposing the regulating member 9 on the main surface 7a of the heat radiating member 7 can be improved.
< Structure of semiconductor Module >
Fig. 14 is a schematic cross-sectional view showing a semiconductor module according to embodiment 5. The semiconductor module 100 shown in fig. 14 basically has the same configuration as the semiconductor module 100 shown in fig. 13, but the semiconductor package 200 has a configuration different from the semiconductor module 100 shown in fig. 13. That is, in the semiconductor module 100 shown in fig. 14, as in the semiconductor module 100 according to embodiment 2, the pressing portion 22 that comes into contact with the top portion 9a of the regulating member 9 is formed on the outer peripheral portion of the sealing resin 4 of the semiconductor package 200.
< Effect >
Since the semiconductor module 100 has the concave portion 24 formed in the main surface 7a of the heat radiating member 7, as in the semiconductor module 100 according to embodiment 4, the same effects as in the semiconductor module 100 according to embodiment 4 can be obtained. In the semiconductor module 100, the semiconductor package 200 includes the pressing portion 22 that contacts the top portion 9a of the regulating member 9. Therefore, the same effects as those of the semiconductor module 100 according to embodiment 2 described above can be obtained. That is, by pressing the top portion 9a of the regulating member 9 by the pressing portion 22 of the semiconductor package 200, it is possible to suppress the occurrence of gaps in the contact interface between the regulating member 9 and the semiconductor package 200 and the contact interface between the regulating member 9 and the heat dissipating member 7. As a result, the resin component of the connecting member 8 can be prevented from flowing out to the outside through the gap at the contact interface. In the semiconductor module 100 described above, it is preferable that the material constituting the regulating member 9 includes an elastic body.
In this embodiment, the semiconductor module according to embodiments 1 to 5 described above is applied to a power conversion device. The present invention is not limited to a specific power conversion device, and a case where the present invention is applied to a three-phase inverter will be described below as embodiment 6.
Fig. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.
The power conversion system shown in fig. 15 includes a power supply 300, a power conversion device 400, and a load 500. The power supply 300 is a dc power supply and supplies dc power to the power conversion device 400. The power supply 300 may include various power supplies, and may include, for example, a direct current system, a solar cell, and a storage battery, or a rectifier circuit and an AC/DC converter connected to an alternating current system. The power supply 300 may be configured by a DC/DC converter that converts DC power output from the DC system into predetermined power.
The following describes details of the power conversion device 400. The main converter circuit 401 includes a switching element and a flywheel diode (not shown), and converts dc power supplied from the power supply 300 into ac power by switching operation of the switching element, and supplies the ac power to the load 500. The main conversion circuit 401 has various specific circuit configurations, and the main conversion circuit 401 according to the present embodiment is a 2-level three-phase full bridge circuit and may include 6 switching elements and 6 freewheeling diodes connected in anti-parallel to the switching elements. Each switching element and each free wheel diode of the main conversion circuit 401 includes a semiconductor module 402 corresponding to any one of embodiments 1 to 5 described above. The 6 switching elements are connected in series for every 2 switching elements to form upper and lower arms, and the upper and lower arms form phases (U-phase, V-phase, W-phase) of the full bridge circuit. The output terminals of the upper and lower arms, that is, 3 output terminals of the main converter circuit 401 are connected to the load 500.
The main conversion circuit 401 includes a drive circuit (not shown) for driving each switching element, and the drive circuit may be built in the semiconductor module 402 or may be configured to include a drive circuit independently of the semiconductor module 402. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 401, and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 401. Specifically, a drive signal for turning the switching element on and a drive signal for turning the switching element off are output to the control electrode of each switching element in accordance with a control signal from a control circuit 403 to be described later. When the switching element is maintained in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the off state, the drive signal is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element.
The control circuit 403 controls the switching elements of the main converter circuit 401 so as to supply desired power to the load 500. Specifically, the time (on time) for which each switching element of the main converter circuit 401 should be turned on is calculated based on the power to be supplied to the load 500. For example, the main converter circuit 401 can be controlled by PWM control for modulating the on time of the switching element in accordance with a voltage to be output. Then, a control command (control signal) is output to the drive circuit provided in the main conversion circuit 401 so that an on signal is output to the switching element to be turned on and an off signal is output to the switching element to be turned off at each time point. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element in accordance with the control signal.
In the power converter according to the present embodiment, the semiconductor module according to any one of embodiments 1 to 5 is applied as the switching element and the flywheel diode of the main conversion circuit 401, and thus a highly reliable power converter can be realized.
In the present embodiment, an example in which the present invention is applied to a 2-level three-phase inverter is described, but the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, the power conversion device is set to 2-level, but may be a 3-level or multilevel power conversion device, and the present invention may be applied to a single-phase inverter when supplying power to a single-phase load. Further, the present invention can be applied to a DC/DC converter or an AC/DC converter when electric power is supplied to a DC load or the like.
The power converter to which the present invention is applied is not limited to the case where the load is a motor, and may be used as a power supply device for an electric discharge machine, a laser machine, an induction heating cooker, or a non-contactor power supply system, and may also be used as a power conditioner for a solar power generation system, a power storage system, or the like.
The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. At least 2 of the embodiments disclosed herein may be combined as long as they are not contradictory. The scope of the present invention is defined by the claims rather than the above description, and is intended to include all modifications within the meaning and scope equivalent to the claims.
Claims (9)
1. A semiconductor module is provided with:
a heat dissipation member having a main surface;
a semiconductor package disposed on the main surface and including a semiconductor element;
a connection member, located between the heat dissipation member and the semiconductor package, and connecting the heat dissipation member and the semiconductor package, including a resin component; and
a restricting member disposed on the main surface so as to surround the connecting member,
the top portion of the regulating member is located farther from the main surface than the outer peripheral portion of the surface of the connecting member on the semiconductor package side in a direction perpendicular to the main surface.
2. The semiconductor module of claim 1,
a groove portion is formed in a region of the main surface located below the restricting member,
a portion of the restricting member is located inside the groove portion.
3. The semiconductor module of claim 1,
a recess is formed in the main surface in a region located below the restricting member and the connecting member,
a portion of the restraining member and the connecting member are located inside the recess.
4. The semiconductor module according to any one of claims 1 to 3,
the semiconductor package includes a pushing portion that contacts the top of the restriction member.
5. The semiconductor module according to any one of claims 1 to 4,
the material of which the restraining member is made comprises an elastomer.
6. The semiconductor module according to any one of claims 1 to 5,
the relative permittivity of the restriction member is greater than the relative permittivity of the connection member.
7. A power conversion device is provided with:
a main conversion circuit having the semiconductor module according to claim 1, the main conversion circuit converting an input power and outputting the converted power; and
and a control circuit which outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
8. A method for manufacturing a semiconductor module includes the steps of:
preparing a heat dissipating member having a main surface;
disposing a connecting member containing a resin component on the main surface;
disposing a regulating member on the main surface so as to surround the connecting member;
disposing a semiconductor package including a semiconductor element on the connection member; and
and a step of heating the connection member while pressing the semiconductor package against the connection member side, thereby connecting the heat dissipation member and the semiconductor package by the connection member.
9. The method for manufacturing a semiconductor module according to claim 8,
the step of disposing the restricting member includes the steps of:
disposing a liquid to be the regulating member on the main surface; and
and a step of forming the regulating member by solidifying the liquid.
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| PCT/JP2019/021109 WO2020240699A1 (en) | 2019-05-28 | 2019-05-28 | Semiconductor module, method for manufacturing semiconductor module, and power conversion apparatus |
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| CN105304578A (en) * | 2014-07-15 | 2016-02-03 | 富士电机株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2017092056A (en) * | 2015-11-02 | 2017-05-25 | 三菱電機株式会社 | Power semiconductor device |
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| JPWO2020240699A1 (en) | 2020-12-03 |
| CN113841235B (en) | 2024-05-24 |
| JP7134345B2 (en) | 2022-09-09 |
| WO2020240699A1 (en) | 2020-12-03 |
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