JP2019117400A - 基板処理方法における欠陥削減 - Google Patents
基板処理方法における欠陥削減 Download PDFInfo
- Publication number
- JP2019117400A JP2019117400A JP2019052626A JP2019052626A JP2019117400A JP 2019117400 A JP2019117400 A JP 2019117400A JP 2019052626 A JP2019052626 A JP 2019052626A JP 2019052626 A JP2019052626 A JP 2019052626A JP 2019117400 A JP2019117400 A JP 2019117400A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas cluster
- neutral
- gcib
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 230000007547 defect Effects 0.000 title abstract description 21
- 230000007935 neutral effect Effects 0.000 claims abstract description 143
- 150000002500 ions Chemical class 0.000 claims abstract description 114
- 239000002245 particle Substances 0.000 claims abstract description 47
- 230000006378 damage Effects 0.000 claims abstract description 44
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 35
- 230000001737 promoting effect Effects 0.000 claims abstract description 13
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 12
- 230000005593 dissociations Effects 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims description 95
- 239000000178 monomer Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000005498 polishing Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000003776 cleavage reaction Methods 0.000 claims description 9
- 230000007017 scission Effects 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000356 contaminant Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000009499 grossing Methods 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 208000027418 Wounds and injury Diseases 0.000 claims 2
- 208000014674 injury Diseases 0.000 claims 2
- 238000013467 fragmentation Methods 0.000 abstract description 2
- 238000006062 fragmentation reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 191
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 230000001133 acceleration Effects 0.000 description 29
- 238000005259 measurement Methods 0.000 description 28
- 125000004429 atom Chemical group 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 19
- 238000004980 dosimetry Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 14
- 230000004907 flux Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000005350 fused silica glass Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 239000012634 fragment Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000013019 agitation Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 150000002835 noble gases Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 but not limited to Chemical compound 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002405 diagnostic procedure Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
Claims (21)
- 1つまたは複数の粒子が埋設された、または表面下損傷を含む、基板の表面処理方法であって、
低圧チャンバを提供する工程と、
前記低圧チャンバ内で、ガスクラスタイオンからなるガスクラスタイオンビームを形成する工程と、
前記低圧チャンバ内でビーム経路に沿う加速ガスクラスタイオンビームを形成するために前記ガスクラスタイオンを加速する工程と、
前記ビーム経路に沿う前記加速ガスクラスタイオンの少なくとも一部の開裂および/または解離を促進する工程と、
前記ビーム経路から荷電粒子を除去して、前記低圧チャンバ内で前記ビーム経路に沿う加速中性ビームを形成する工程と、
前記表面を前記ビーム経路内に保持する工程と、
前記基板の前記表面の少なくとも一部に前記加速中性ビームを照射することにより、前記基板の前記表面の少なくとも一部を処理する工程と、を備える方法。 - 前記1つまたは複数の埋設された粒子または前記表面下損傷が、先に行なわれた加工作業を起因とするものである、請求項1に記載の方法。
- 前記1または複数の埋設された粒子または前記表面下損傷が、先に行なわれた平滑化または研磨または平坦化作業を起因とするものである、請求項2に記載の方法。
- 前記平滑化または研磨または平坦化作業がCMP加工である、請求項3に記載の方法。
- 前記損傷が潜在的損傷である、請求項3に記載の方法。
- 前記1つまたは複数の埋設された粒子または前記表面下損傷が、先に行なわれたダイヤモンド切削または研磨剤研磨作業を起因とするものである、請求項2に記載の方法。
- 前記損傷が潜在的損傷である、請求項6に記載の方法。
- 前記処理工程が、前記表面の前記一部を、1つまたは複数の埋設された粒子または表面下損傷を取り除くのに充分な所定厚さをエッチング除去するのに充分な線量で照射する、請求項1に記載の方法。
- 前記処理された部分を洗浄し、1つまたは複数の残留粒子を除去する工程をさらに備える、請求項8に記載の方法。
- 前記1つまたは複数の残留粒子が、前記処理工程を起因とする汚染物質である、請求項1に記載の方法。
- 前記促進工程が、前記加速工程中に加速電圧を上昇させること、または、前記ガスクラスタイオンビームの前記形成中にイオン化効率を改善することを含む、請求項1に記載の方法。
- 前記促進工程が、前記加速ガスクラスタイオンビーム内のイオン速度範囲を増大することを含む、請求項1に記載の方法。
- 前記促進工程が、前記ガスクラスタイオンビームの形成に用いられる1つまたは複数のガス状要素を前記低圧チャンバに導入し、前記ビーム経路に沿って圧力を高めることを含む、請求項1に記載の方法。
- 前記促進工程が、前記加速ガスクラスタイオンビームの形成工程中に用いられるスキマー開口のサイズを増大することを含む、請求項1に記載の方法。
- 前記促進工程が、前記加速ガスクラスタイオンビームまたは前記中性ビームに、放射エネルギーを照射することを含む、請求項1に記載の方法。
- 前記ワークの表面の少なくとも一部を処理する前記中性ビームが、実質的に、1eV〜数千eVのエネルギーを有するモノマーから成る、請求項1に記載の方法。
- 前記表面の広い部分を処理するために、ワークホルダにてワークを走査する工程をさらに備える請求項1に記載の方法。
- 前記保持工程により、
光学材料、
セラミック材料、
ガラス材料、
金属材料、または
シリカ
のいずれかを含む前記基板を導入する、請求項1に記載の方法。 - 前記基板が、リソグラフィ用フォトマスク基板である、請求項1に記載の方法。
- 請求項1に記載のプロセスにより作成される物品。
- 請求項1に記載の前記方法により処理される表面を備える、リソグラフィ用フォトマスク。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361768618P | 2013-02-25 | 2013-02-25 | |
US61/768,618 | 2013-02-25 | ||
US201361865704P | 2013-08-14 | 2013-08-14 | |
US61/865,704 | 2013-08-14 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015559051A Division JP2016509263A (ja) | 2013-02-25 | 2014-02-25 | 基板処理方法における欠陥削減 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019117400A true JP2019117400A (ja) | 2019-07-18 |
JP6752490B2 JP6752490B2 (ja) | 2020-09-09 |
Family
ID=51391902
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015559051A Pending JP2016509263A (ja) | 2013-02-25 | 2014-02-25 | 基板処理方法における欠陥削減 |
JP2019052626A Active JP6752490B2 (ja) | 2013-02-25 | 2019-03-20 | 基板処理方法における欠陥削減 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015559051A Pending JP2016509263A (ja) | 2013-02-25 | 2014-02-25 | 基板処理方法における欠陥削減 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160004152A1 (ja) |
EP (1) | EP2959502A4 (ja) |
JP (2) | JP2016509263A (ja) |
CN (1) | CN105378898A (ja) |
WO (1) | WO2014130979A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016145337A1 (en) * | 2015-03-11 | 2016-09-15 | Exogenesis Corporation | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
CA2811750C (en) | 2010-08-23 | 2018-08-07 | Exogenesis Corporation | Method and apparatus for neutral beam processing based on gas cluster ion beam technology |
US9540725B2 (en) * | 2014-05-14 | 2017-01-10 | Tel Epion Inc. | Method and apparatus for beam deflection in a gas cluster ion beam system |
KR20180070505A (ko) * | 2015-10-14 | 2018-06-26 | 엑소제네시스 코포레이션 | 가스 클러스터 이온빔 기술에 기반한 중성빔 처리 방법을 이용한 초미세 에칭 방법 |
WO2021229967A1 (ja) * | 2020-05-13 | 2021-11-18 | Agc株式会社 | ガラス板の加工方法、及びeuvl用マスクブランクの製造方法 |
KR102305099B1 (ko) * | 2020-11-19 | 2021-09-27 | 한국기초과학지원연구원 | 혼합 가스 클러스터 이온 빔 생성 장치 및 이를 포함하는 질량 분석기 |
WO2023143887A1 (en) * | 2022-01-25 | 2023-08-03 | Asml Netherlands B.V. | A pellicle cleaning system |
CN115304022B (zh) * | 2022-07-07 | 2024-05-24 | 武汉大学 | 基于超低能团簇离子束自组装制备功能纳米结构的方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4713542A (en) * | 1984-10-31 | 1987-12-15 | United States Of America As Represented By The Secretary Of The Navy | Ton beam neutralizer |
US4812663A (en) * | 1986-07-25 | 1989-03-14 | Eaton Corporation | Calorimetric dose monitor for ion implantation equipment |
US4935623A (en) * | 1989-06-08 | 1990-06-19 | Hughes Aircraft Company | Production of energetic atom beams |
JP2001217221A (ja) * | 2000-02-04 | 2001-08-10 | Toshiba Ceramics Co Ltd | 半導体素子用シリコンウェーハおよびその製造方法 |
JP2003527614A (ja) * | 2000-03-20 | 2003-09-16 | エピオン コーポレイション | クラスターサイズ測定器具およびクラスターイオンビーム診断方法 |
US7410890B2 (en) * | 2002-12-12 | 2008-08-12 | Tel Epion Inc. | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
US7060989B2 (en) * | 2004-03-19 | 2006-06-13 | Epion Corporation | Method and apparatus for improved processing with a gas-cluster ion beam |
JP4433860B2 (ja) * | 2004-04-02 | 2010-03-17 | 旭硝子株式会社 | ガラス基板の製造方法並びにフォトマスク用ブランクスの製造方法及びフォトマスクの製造方法 |
JP4926067B2 (ja) * | 2004-10-25 | 2012-05-09 | ティーイーエル エピオン インク. | ガスクラスターイオンビーム形成のためのイオナイザおよび方法 |
JP4416632B2 (ja) * | 2004-12-03 | 2010-02-17 | キヤノン株式会社 | ガスクラスターイオンビーム照射装置およびガスクラスターのイオン化方法 |
JP5105729B2 (ja) * | 2005-09-01 | 2012-12-26 | キヤノン株式会社 | ガスクラスターイオンビームによる加工方法 |
US7884032B2 (en) * | 2005-10-28 | 2011-02-08 | Applied Materials, Inc. | Thin film deposition |
US7964818B2 (en) * | 2006-10-30 | 2011-06-21 | Applied Materials, Inc. | Method and apparatus for photomask etching |
US7943005B2 (en) * | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
WO2009004852A1 (en) * | 2007-06-29 | 2009-01-08 | Asahi Glass Co., Ltd. | Method for removing foreign matter from glass substrate surface and method for processing glass substrate surface |
US8377460B2 (en) * | 2007-09-14 | 2013-02-19 | Exogenesis Corporation | Method for modifying the wettability and/or other biocompatibility characteristics of a surface of a biological material by the application of gas cluster ion beam technology and biological materials made thereby |
US9144627B2 (en) * | 2007-09-14 | 2015-09-29 | Exogenesis Corporation | Methods for improving the bioactivity characteristics of a surface and objects with surfaces improved thereby |
US7825389B2 (en) * | 2007-12-04 | 2010-11-02 | Tel Epion Inc. | Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture |
JP5317092B2 (ja) * | 2008-03-23 | 2013-10-16 | Hoya株式会社 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
US8313663B2 (en) * | 2008-09-24 | 2012-11-20 | Tel Epion Inc. | Surface profile adjustment using gas cluster ion beam processing |
WO2010120805A2 (en) * | 2009-04-13 | 2010-10-21 | Applied Materials, Inc. | Modification of magnetic properties of films using ion and neutral beam implantation |
KR20130007570A (ko) * | 2010-03-16 | 2013-01-18 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피 광학 부재용 기재, 및 그의 제조 방법 |
US20110240602A1 (en) * | 2010-03-30 | 2011-10-06 | Tel Epion Inc. | High-voltage gas cluster ion beam (gcib) processing system |
JP5914464B2 (ja) * | 2010-05-05 | 2016-05-11 | エクソジェネシス コーポレーション | 表面のバイオ活性特性の改善方法およびそれにより改善された表面を有する物体 |
JP5031066B2 (ja) * | 2010-05-26 | 2012-09-19 | 兵庫県 | クラスタービーム発生装置、基板処理装置、クラスタービーム発生方法及び基板処理方法 |
US8193094B2 (en) * | 2010-06-21 | 2012-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post CMP planarization by cluster ION beam etch |
CA2811750C (en) * | 2010-08-23 | 2018-08-07 | Exogenesis Corporation | Method and apparatus for neutral beam processing based on gas cluster ion beam technology |
WO2013126841A1 (en) * | 2012-02-22 | 2013-08-29 | Exogenesis Corporation | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
US20120161037A1 (en) * | 2010-12-23 | 2012-06-28 | Axcelis Technologies, Inc. | Dose Measurement Method using Calorimeter |
US8546748B2 (en) * | 2011-04-07 | 2013-10-01 | Triad Technology, Inc. | Helium barrier atom chamber |
JP5776397B2 (ja) * | 2011-07-19 | 2015-09-09 | 東京エレクトロン株式会社 | 洗浄方法、処理装置及び記憶媒体 |
-
2014
- 2014-02-25 CN CN201480023532.5A patent/CN105378898A/zh active Pending
- 2014-02-25 WO PCT/US2014/018147 patent/WO2014130979A1/en active Application Filing
- 2014-02-25 US US14/768,899 patent/US20160004152A1/en not_active Abandoned
- 2014-02-25 JP JP2015559051A patent/JP2016509263A/ja active Pending
- 2014-02-25 EP EP14753831.8A patent/EP2959502A4/en not_active Ceased
-
2019
- 2019-03-20 JP JP2019052626A patent/JP6752490B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN105378898A (zh) | 2016-03-02 |
EP2959502A1 (en) | 2015-12-30 |
WO2014130979A1 (en) | 2014-08-28 |
JP6752490B2 (ja) | 2020-09-09 |
US20160004152A1 (en) | 2016-01-07 |
JP2016509263A (ja) | 2016-03-24 |
EP2959502A4 (en) | 2016-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10209617B2 (en) | Treatment method for defect reduction in a substrate and substrates treated thereby | |
JP6752490B2 (ja) | 基板処理方法における欠陥削減 | |
JP6864376B2 (ja) | ガスクラスタイオンビーム技術に基づく中性ビーム処理を用いて極めて浅くエッチングする方法 | |
US7982196B2 (en) | Method for modifying a material layer using gas cluster ion beam processing | |
JP6162700B2 (ja) | 表面分析向上のために加速中性ビームを使用する方法および装置 | |
KR102542804B1 (ko) | 가스 클러스터 이온빔 기술에 기반한 중성빔 처리 방법 및 이에 의해 제조되는 물품 | |
US20170303383A1 (en) | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby | |
JP6408490B2 (ja) | 中性ビームを配向するための方法および装置 | |
JP6178324B2 (ja) | 中性ビームの特徴付けのための診断方法および装置ならびにそれによるプロセス制御 | |
TWI692011B (zh) | 用於基於氣體簇離子束技術的中性束處理之方法及藉其製造之物件 | |
US20070010095A1 (en) | Surface treatment method using ion beam and surface treating device | |
US20240018003A1 (en) | Using anab technology to remove production processing residuals from graphene | |
WO2022217102A9 (en) | Method and apparatus for forming substrate surfaces with exposed crystal lattice using accelerated neutral atom beam |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190417 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190417 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200501 |
|
A603 | Late request for extension of time limit during examination |
Free format text: JAPANESE INTERMEDIATE CODE: A603 Effective date: 20200501 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200626 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200721 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200813 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6752490 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |