JP2019102518A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2019102518A JP2019102518A JP2017228967A JP2017228967A JP2019102518A JP 2019102518 A JP2019102518 A JP 2019102518A JP 2017228967 A JP2017228967 A JP 2017228967A JP 2017228967 A JP2017228967 A JP 2017228967A JP 2019102518 A JP2019102518 A JP 2019102518A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- pressure
- substrate
- wafer
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 238000012545 processing Methods 0.000 title claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 195
- 230000004044 response Effects 0.000 claims abstract description 49
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000003860 storage Methods 0.000 claims abstract description 11
- 238000003825 pressing Methods 0.000 claims abstract description 10
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 230000008859 change Effects 0.000 claims description 12
- 238000010606 normalization Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 83
- 239000007788 liquid Substances 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 14
- 239000012530 fluid Substances 0.000 description 10
- 239000013307 optical fiber Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000000611 regression analysis Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
R.Ri= b0+b1*AP1i+b2*AP2i+b3*AP3i
+b4*AP4i+b5*AP5i
ここで、bは応答係数、APは各圧力室における設定圧力をいう。
Xi_Norm(t)=Ave_B*(Xi(t)/B(t))
15 制御装置
40 研磨ユニット
41 トップリング
42 研磨パッド
50 膜厚測定器
80 研磨制御部
81 膜厚測定部
82 応答特性取得部
83 記憶部
D1〜D5 圧力室
W ウェーハ
Claims (5)
- 基板を研磨パッドに押し付けることにより前記基板の研磨を行う基板処理装置において、
前記基板を押圧するための複数の圧力室を形成する研磨ヘッドと、
前記複数の圧力室内の圧力を個別に制御することで、圧力フィードバック制御を行うための圧力制御部と、
研磨中の前記基板の膜厚分布を測定する膜厚測定部と、
前記複数の圧力室における設定圧力の情報を複数記憶する記憶部と、
前記基板の研磨中に所定条件を満たす毎に、前記設定圧力を変更して前記基板に対する研磨レートを測定し、得られた複数の研磨レートに基づいて、前記圧力室における圧力フィードバックに対する基板研磨の応答特性を取得する応答特性取得部と、を備えたことを特徴とする基板研磨装置。 - 前記所定条件は、一定時間が経過すること又は前記基板の研磨量が一定量に達することである、請求項1記載の基板研磨装置。
- 複数の前記設定圧力は、各圧力室の基準値からなる基準圧力条件と、当該基準圧力条件から一の圧力室における圧力値のみを変化させた複数の設定圧力条件から構成されることを特徴とする、請求項1または2記載の基板研磨装置。
- 前記応答特性取得部は、1枚の基板に対して、前記複数の設定圧力にて基板研磨を順次行うことで、前記複数の研磨レートを測定することを特徴とする、請求項1ないし3のいずれか記載の基板研磨装置。
- 前記応答特性取得部は、前記基準圧力条件に基づく研磨レートの時間変化を示す基準レートを取得した後、前記複数の設定圧力にて基板研磨を順次行うことで得られた研磨レートに対し前記基準レートに基づき規格化することで、前記研磨レートを補正することを特徴とする、請求項3記載の基板研磨装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017228967A JP7012519B2 (ja) | 2017-11-29 | 2017-11-29 | 基板処理装置 |
TW107140128A TWI788457B (zh) | 2017-11-29 | 2018-11-13 | 基板研磨裝置、存儲媒體及基板研磨的響應特性的獲取方法 |
KR1020180147207A KR102644567B1 (ko) | 2017-11-29 | 2018-11-26 | 기판 처리 장치 |
US16/201,546 US11883922B2 (en) | 2017-11-29 | 2018-11-27 | Substrate processing apparatus |
CN201811433092.7A CN109877698B (zh) | 2017-11-29 | 2018-11-28 | 基板处理装置、存储介质及基板研磨的响应特性的获取方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017228967A JP7012519B2 (ja) | 2017-11-29 | 2017-11-29 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019102518A true JP2019102518A (ja) | 2019-06-24 |
JP7012519B2 JP7012519B2 (ja) | 2022-01-28 |
Family
ID=66634804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017228967A Active JP7012519B2 (ja) | 2017-11-29 | 2017-11-29 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11883922B2 (ja) |
JP (1) | JP7012519B2 (ja) |
KR (1) | KR102644567B1 (ja) |
CN (1) | CN109877698B (ja) |
TW (1) | TWI788457B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021106193A (ja) * | 2019-12-26 | 2021-07-26 | 株式会社Sumco | Soiウェーハの片面研磨システム及びそれを用いたsoiウェーハの片面研磨方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210134129A (ko) | 2020-04-29 | 2021-11-09 | 삼성전자주식회사 | 웨이퍼 검사 장치 및 방법 |
KR20220003286A (ko) * | 2020-07-01 | 2022-01-10 | 주식회사 케이씨텍 | 기판 연마 시스템 및 기판 연마 방법 |
JP2022032201A (ja) * | 2020-08-11 | 2022-02-25 | 株式会社荏原製作所 | 基板処理装置及び研磨部材のドレッシング制御方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000094301A (ja) * | 1998-09-22 | 2000-04-04 | Canon Inc | 基板研磨方法および基板研磨装置 |
JP2004001227A (ja) * | 1995-07-20 | 2004-01-08 | Ebara Corp | ポリッシング装置および方法 |
JP2006043873A (ja) * | 2004-07-09 | 2006-02-16 | Ebara Corp | 研磨プロファイル又は研磨量の予測方法、研磨方法及び研磨装置、プログラム、記憶媒体 |
JP2012028554A (ja) * | 2010-07-23 | 2012-02-09 | Ebara Corp | 基板の研磨の進捗を監視する方法および研磨装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
EP1758711B1 (en) | 2004-06-21 | 2013-08-07 | Ebara Corporation | Polishing apparatus and polishing method |
US7150673B2 (en) * | 2004-07-09 | 2006-12-19 | Ebara Corporation | Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus |
JP5141068B2 (ja) | 2007-03-28 | 2013-02-13 | 富士通セミコンダクター株式会社 | 研磨方法、研磨装置及び半導体装置の製造方法 |
JP6293519B2 (ja) | 2014-03-05 | 2018-03-14 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
JP6266493B2 (ja) * | 2014-03-20 | 2018-01-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
KR102131090B1 (ko) | 2014-04-22 | 2020-07-07 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 방법 및 연마 장치 |
JP6585445B2 (ja) | 2015-09-28 | 2019-10-02 | 株式会社荏原製作所 | 研磨方法 |
JP6475604B2 (ja) | 2015-11-24 | 2019-02-27 | 株式会社荏原製作所 | 研磨方法 |
-
2017
- 2017-11-29 JP JP2017228967A patent/JP7012519B2/ja active Active
-
2018
- 2018-11-13 TW TW107140128A patent/TWI788457B/zh active
- 2018-11-26 KR KR1020180147207A patent/KR102644567B1/ko active IP Right Grant
- 2018-11-27 US US16/201,546 patent/US11883922B2/en active Active
- 2018-11-28 CN CN201811433092.7A patent/CN109877698B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004001227A (ja) * | 1995-07-20 | 2004-01-08 | Ebara Corp | ポリッシング装置および方法 |
JP2000094301A (ja) * | 1998-09-22 | 2000-04-04 | Canon Inc | 基板研磨方法および基板研磨装置 |
JP2006043873A (ja) * | 2004-07-09 | 2006-02-16 | Ebara Corp | 研磨プロファイル又は研磨量の予測方法、研磨方法及び研磨装置、プログラム、記憶媒体 |
JP2012028554A (ja) * | 2010-07-23 | 2012-02-09 | Ebara Corp | 基板の研磨の進捗を監視する方法および研磨装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021106193A (ja) * | 2019-12-26 | 2021-07-26 | 株式会社Sumco | Soiウェーハの片面研磨システム及びそれを用いたsoiウェーハの片面研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
US11883922B2 (en) | 2024-01-30 |
JP7012519B2 (ja) | 2022-01-28 |
KR102644567B1 (ko) | 2024-03-08 |
US20190160626A1 (en) | 2019-05-30 |
TWI788457B (zh) | 2023-01-01 |
KR20190063417A (ko) | 2019-06-07 |
CN109877698B (zh) | 2022-05-31 |
CN109877698A (zh) | 2019-06-14 |
TW201926450A (zh) | 2019-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102644567B1 (ko) | 기판 처리 장치 | |
KR101078007B1 (ko) | 폴리싱장치 및 폴리싱방법 | |
US10589397B2 (en) | Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing | |
TWI678261B (zh) | 基板硏磨期間之硏磨速率的限制性調整 | |
TWI449595B (zh) | 研磨方法及研磨裝置 | |
KR20190082830A (ko) | 신경망을 사용한 분광 모니터링 | |
JP2005011977A (ja) | 基板研磨装置および基板研磨方法 | |
CN109382755B (zh) | 基板研磨装置及方法 | |
KR102395616B1 (ko) | 화학적 기계적 연마를 위한 실시간 프로파일 제어 | |
TW201524681A (zh) | 於使用預測過濾器之基板硏磨時之硏磨速率調整 | |
JP2007243221A (ja) | 基板研磨装置および基板研磨方法 | |
KR102556648B1 (ko) | 기판 연마 장치 및 방법 | |
JP2022127883A (ja) | 基板処理の制御方法 | |
CN111699074B (zh) | 普雷斯顿矩阵产生器 | |
TWI570791B (zh) | 研磨裝置及基板固持裝置 | |
TW201624551A (zh) | 研磨裝置 | |
JP2022127882A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200424 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210511 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211005 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220111 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220118 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7012519 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |