JP2019091861A - Method for manufacturing semiconductor device - Google Patents

Abstract

To provide a method for manufacturing a semiconductor device capable of preventing a decrease in a degree of freedom of a manufacturing process of the semiconductor device.SOLUTION: A method for manufacturing a semiconductor device comprises: a sheet sticking step (PC1) of sticking an adhesive sheet AS in which an adhesive layer AL is laminated in a base material BS including expandable fine particles SG, which expand due to an infrared ray, to a semiconductor wafer WF; a modified layer forming step (PC2) of forming a modified layer ML in which the semiconductor wafer WF is individualized by imparting an external force; an adhesion region reducing step (PC3) of reducing an adhesion region of the base material BS by imparting an infrared ray to the base material BS; a separating step (PC4) of separating the adhesive layer AL and the base material BS; a support member sticking step (PC5) of sticking a support member RS to the adhesive layer AL; a an individualizing step (PC6) of forming a semiconductor chip CP by imparting an external force to the semiconductor wafer WF; a dismounting step (PC7) of dismounting the semiconductor chip CP from the support member RS; and a chip bonding step (PC8) of bonding the semiconductor chip CP to a substrate CB.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method of manufacturing a semiconductor device.

  Conventionally, when forming a semiconductor chip (hereinafter, also simply referred to as “chip”) by singulating a semiconductor wafer (hereinafter, also simply referred to as “wafer”), manufacturing of a semiconductor device using a sheet having good suitability in each process A method is known (see, for example, Patent Document 1).

JP 2007-88038 A

  However, in the conventional method described in Patent Document 1, the dicing sheet 30 (adhesive sheet) used in the previous dicing step is a chip together with the adhesive 32 (adhesive layer) after the dicing step. 21 (the semiconductor chip), the step of attaching the second sheet (the supporting member attaching step) prepares for the subsequent pickup step, and the pickup sheet 40 (supporting member having the adhesive 42 adhered to the semiconductor chip) It becomes an essential requirement to select C), which causes a disadvantage that the degree of freedom of the manufacturing process of the semiconductor device is reduced.

  An object of the present invention is to provide a method of manufacturing a semiconductor device which can prevent the degree of freedom of the manufacturing process of the semiconductor device from being lowered.

  The present invention adopts the configuration described in the claims.

  According to the present invention, in the adhesive sheet used by sticking to the wafer in the previous step, the base material is separated leaving the adhesive layer on the wafer, so that in the supporting member attaching step, the support having the adhesive layer It is not an essential requirement to select members, and it is possible to prevent the degree of freedom in the manufacturing process of the semiconductor device from being lowered.

Explanatory drawing of the manufacturing method of the semiconductor device concerning the embodiment of the present invention. Explanatory drawing of the manufacturing method of the semiconductor device concerning the modification of the present invention. Explanatory drawing of the manufacturing method of the semiconductor device concerning the modification of the present invention. Explanatory drawing of the manufacturing method of the semiconductor device concerning the modification of the present invention.

Hereinafter, embodiments of the present invention will be described based on the drawings.
In the present embodiment, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane. Do. Furthermore, in the present embodiment, when referring to a direction from the front in FIG. 1 parallel to the Y-axis and indicating a direction without specifying a figure, “upper” is “down” in the arrow direction of the Z-axis. Is the opposite direction, “left” is the arrow direction of the X axis, “right” is the opposite direction, and “front” is the opposite direction in the front direction in FIG. 1 parallel to the Y axis. Moreover, since FIGS. 1-4 is the figure seen from the same direction as the direction described to (A) of each figure, the arrow which shows the direction except (A) of each figure is abbreviate | omitted.

  In the method of manufacturing a semiconductor device according to the present invention, the adhesive sheet AS in which the adhesive layer AL is laminated on the base material BS including the expandable fine particles SG which expand due to the application of infrared rays as the predetermined first energy A sheet sticking step PC1 for sticking to one surface of the WF, and a modified layer formation step PC2 for forming a modified layer ML on the wafer WF in which the wafer WF is singulated by applying an external force to the wafer WF; An adhesion area reducing step PC3 for applying infrared rays to the base material BS to expand the expandable fine particles SG and reducing the adhesion area of the base material BS to the adhesive layer AL; and the adhesive layer AL and the base material BS The external force is applied to the wafer WF by applying an external force to the separation step PC4 for separation, the support member attachment step PC5 for attaching the resin sheet RS as a support member to the adhesive layer AL where the base material BS is separated and exposed, Ha WF and singulated with the singulation step PC6 of forming a chip CP, the removal process PC7 removing the chips CP from the resin sheet RS, and a chip bonding step PC8 for bonding the chips CP on the substrate CB.

In the sheet sticking process PC1, as shown in FIG. 1A, the adhesive sheet AS is pressed against one surface of the wafer WF and stuck by the pressing roller 11 as a pressing means. The adhesive sheet AS is attached to the wafer WF while the movement of one of the pressing roller 11 and the wafer WF is restricted, the other is moved, or both are moved. The wafer WF may have a predetermined circuit formed on at least one of the one surface and the other surface, and the adhesive sheet AS may be attached to the surface of the wafer WF on which the predetermined circuit is formed. And a predetermined circuit may not be formed on the surface.
In the case of the present embodiment, the base material BS constituting the adhesive sheet AS has a large thickness to such an extent that the energy of the laser used in the modification layer forming step PC2 does not penetrate, or the wafer WF moves at the time of laser irradiation or after irradiation. A material suitable for the modified layer forming step PC2 is adopted, such as one having a high rigidity to the extent that it does not deform or deform.

  In the modified layer forming step PC2, as shown in FIG. 1B, a plurality of modified layers ML are formed inside the wafer WF by the laser irradiator 21 as a modified layer forming means. The modified layer ML moves the other of the laser irradiator 21 and the wafer WF while restricting the movement of one of the laser irradiator 21 and the wafer WF, or moves both of them, thereby moving the X axis and Y in the state of FIG. It forms in the grid | lattice form which becomes parallel to an axis, respectively (Modified layer ML parallel to X axis is not shown).

In the adhesion area reduction step PC3, as shown in FIG. 1C, the light emission source 31 as the first energy application means emits infrared light, and the infrared light is applied to the base material BS of the adhesive sheet AS attached to the wafer WF. By doing this, the expandable microparticles SG contained in the base material BS are expanded. The infrared light is applied to the base material BS in a state in which the movement of one of the light source 31 and the wafer WF is restricted, the other is moved, or both are moved, or the movement of both is restricted.
In the base material BS, when the expandable fine particles SG are expanded, as shown in the drawing with AA in FIG. 1C, innumerable convex portions CV are formed, and air enters from the interface with the adhesive layer AL. Thus, a space CR is formed between the adhesive layer AL and the adhesive layer AL, and the adhesion area to the adhesive layer AL is reduced. Then, when the space CR is spread over the entire area between the base material BS and the adhesive layer AL, the base material BS has a remarkably reduced adhesion area to the adhesive layer AL and can be easily removed from the adhesive layer AL. . In the adhesive layer AL subjected to such a phenomenon, only the adhesion region with the base material BS is reduced, and the adhesion does not decrease, and the adhesion after peeling of the base material BS is It is maintained equivalent to the adhesive force before peeling of the material BS.

  In the separation process PC4, as shown in FIG. 1D, the release sheet PT as the holding means is attached by the release roller 41 as the release means to the base material BS of the adhesive sheet AS attached to the wafer WF. The adhesive layer AL and the base material BS are separated by collecting the release sheet PT. The base material BS is separated from the adhesive layer AL by moving one of the release sheet PT and the wafer WF while restricting the movement of the other and moving both of them.

  In the supporting member pasting step PC5, as shown in FIG. 1E, the resin sheet RS is pressed against the adhesive layer AL by the pressing roller 51 as pressing means and stuck. The resin sheet RS is attached to the adhesive layer AL by moving one of the pressing roller 51 and the wafer WF while restricting the movement of the other, or by moving both of them. At this time, the resin sheet RS used is set such that the adhesion to the adhesive layer AL is larger than the adhesion between the chip CP and the adhesive layer AL. Specifically, the resin sheet RS has a roughened surface in contact with the adhesive layer AL, or the adhesive layer AL can be adhered well, for example, an easy-adhesion-treated PET Etc. are used. The resin sheet RS may have an adhesive layer or may not have an adhesive layer. Furthermore, as the resin sheet RS, a sheet suitable for the removal step PC7, such as one having a smaller thickness than the base material BS or one having a low rigidity compared to the base material BS, is adopted.

  In the singulation step PC6, as shown in FIG. 1F, an external force is given to the wafer WF by applying a tension to the resin sheet RS, and the wafer WF is divided at the position of the modified layer ML to Break up to form a chip CP. At this time, the adhesive layer AL located between the chips CP is divided along with the division of the chips CP, but if the adhesive layer AL is not divided, even if it is divided by a cutting means such as a laser beam or a cutter blade Good.

In the removing step PC7, as shown in FIG. 1G, the chip CP is pushed up by the pushing-up member 71 through the resin sheet RS, and the pushed up chip CP is adsorbed and held by the suction pad 72 as holding means. Remove from resin sheet RS. At this time, the chip CP is separated from the adhesive layer AL and removed from the resin sheet RS.
In this removal process PC7, if the resin sheet RS supporting the chip CP has a large thickness or high rigidity like the base material BS suitable for the modified layer forming process PC2, the chip CP is pushed up by the push-up member 71. At this time, the amount of push-up of the chip CP is insufficient, and suction holding by the suction pad 72 can not be performed, or the adjacent chip CP is simultaneously pushed up to cause damage to the adjacent chip CP. On the other hand, such a disadvantage can be prevented in advance by pasting the resin sheet RS to a sheet suitable for the removal step PC7 as in the present embodiment.

  In the chip bonding step PC8, as shown in FIG. 1H, the chip CP adsorbed and held by the suction pad 72 is bonded to the substrate CB. At this time, the chip CP is bonded to the substrate CB via the substrate adhesive layer AD bonded to the substrate CB. Such a substrate adhesive layer AD may be laminated on the chip CP while it is held by suction by the suction pad 72 and transported, or may be laminated on the substrate CB in advance.

  According to the embodiment as described above, with respect to the adhesive sheet AS used by sticking to the wafer WF in the modification layer forming step PC2 which is the previous step, the adhesive layer AL is left on the wafer WF, and the base material BS is left. In the supporting member pasting process PC5, it is not an essential requirement to select the resin sheet RS having the adhesive layer, and to prevent the degree of freedom in the manufacturing process of the semiconductor device from being lowered. it can.

An adhesive layer AL constituting the adhesive sheet AS shown in the above embodiment is applied with ultraviolet light as a predetermined second energy, and the adhesive strength thereof is lowered. Between the member attaching process PC5, an adhesive strength reduction process PC9 may be performed which applies ultraviolet light to the adhesive layer AL to reduce the adhesive strength of the adhesive layer AL.
In the adhesion reduction step PC9, as shown in FIG. 1I, ultraviolet light is emitted from the light emission source 91 as the second energy applying means, and the ultraviolet ray is emitted to the adhesive layer AL of the adhesive sheet AS attached to the wafer WF. The photopolymerization reaction of the photopolymerization initiator contained in the adhesive layer AL is caused to decrease the adhesion. The ultraviolet light is applied to the wafer WF while the movement of one of the light emission source 91 and the wafer WF is restricted, the other is moved, or both are moved, or the movement of both is restricted. As a result, the adhesion of the adhesive layer AL to the chip CP is reduced, and the chip CP can be easily removed from the adhesive layer AL.
The light emission source 91 can transmit the wafer WF to apply the second energy to the adhesive layer AL, depending on the type, characteristics, nature or nature of the second energy.

  Furthermore, in the supporting member pasting step PC5, the resin sheet RS may be set such that the adhesion to the adhesive layer AL is smaller than the adhesion between the chip CP and the adhesive layer AL. . Specifically, the resin sheet RS has a hole or a convex portion formed so that the surface contacting the adhesive layer AL is small, or a small amount of, for example, silicone can not adhere well to the adhesive layer AL. And the like are used. In this case, sheet sticking process PC1, reforming layer formation process PC2, adhesion area reduction process PC3 and separation process PC4 shown in FIGS. 1 (A) to (D) are carried out, and support member sticking process shown in FIG. 1 (E). In PC5, a resin sheet RS is used in which the adhesion to the adhesive layer AL is set smaller than the adhesion between the chip CP and the adhesive layer AL. Next, after the singulation step PC6 shown in FIG. 1 (F) is performed, as shown in FIG. 2 (A), in the removal step PC7, the chip CP is pushed up by the push-up member 71 and the chip CP pushed up is absorbed. The chip CP is removed from the resin sheet RS by suction holding with the pad 72. At this time, the chip CP is removed from the resin sheet RS together with the adhesive layer AL. Then, as shown in FIG. 2B, in the chip bonding step PC8, the chip CP is bonded to the substrate CB via the adhesive layer AL. At this time, the chip CP and the adhesive layer AL may be bonded to the substrate CB via the substrate adhesive layer AD (not shown) as in the above embodiment, and such a substrate adhesive layer AD May be laminated on the adhesive layer AL while being adsorbed and held by the suction pad 72 and transported, or may be laminated on the substrate CB in advance.

  Further, as shown in FIG. 3A, in the modified layer forming step PC2, a modified layer ML which does not reach from the one surface side to the other surface is formed, as shown in FIG. 3B. Then, in the singulation step PC6, the wafer WF is ground by the grinding means 61 such as a grinder or a cutting member until it reaches the modified layer ML from the other surface side of the wafer WF to singulate the wafer WF to form a chip CP. May be At this time, an external force is applied to the wafer WF due to the vibration ground by the grinding means 61, and the wafer WF is singulated to form a chip CP.

Further, as shown in FIG. 4A, in the sheet bonding step PC1, the adhesive sheet AS in which the substrate adhesive layer AD adhered to the substrate CB is laminated on the adhesive layer AL is the substrate adhesive layer. It may be attached to one side of the wafer WF via the AD. In this case, as shown in FIGS. 4 (B) to 4 (F), the modification layer formation step PC2, the adhesion area reduction step PC3, the separation step PC4, the support member attachment step PC5 and the singulation step PC6 are performed, and then As shown in FIG. 4G, in the removal step PC7, the chip CP is removed from the resin sheet RS together with the substrate adhesive layer AD. Next, as shown in FIG. 4H, in the chip bonding step PC8, the chip CP is bonded to the substrate CB via the substrate adhesive layer AD.
Also in this case, the adhesive strength is lowered by applying ultraviolet light as the predetermined second energy to the adhesive layer AL, and the adhesive strength is lowered between the separation step PC4 and the support member sticking step PC5. Process PC9 may be implemented. As a result, the adhesion of the adhesive layer AL to the substrate adhesive layer AD is reduced, and the chip CP can be easily removed from the resin sheet RS together with the substrate adhesive layer AD.
The light emission source 91 can pass the wafer WF and the adhesive layer AD for a substrate to apply the second energy to the adhesive layer AL depending on the type, characteristics, nature or nature of the second energy.

  The means and steps in the present invention are not limited in any way as long as the operations, functions or steps described in the means and steps can be performed, and it is needless to say that the constitutions of only one embodiment shown in the above embodiment or There is no limitation to the process. For example, the sheet attaching step is a step of attaching an adhesive sheet, in which an adhesive layer is laminated on a base material containing expandable fine particles that expand due to application of a predetermined first energy, to one side of a semiconductor wafer. If it is, in light of the technical common knowledge at the time of filing, it is not limited at all within the technical range (the other means and steps are the same).

  The sheet sticking process PC1 is a driving device supported by the output shaft of a linear motion motor as pressing means, and the adhesive sheet AS is held by a holding member capable of holding the adhesive sheet AS by pressure reducing means such as a pressure reducing pump or vacuum ejector. The adhesive sheet AS held and held by the holding member may be pressed against the wafer WF and attached.

In the modified layer forming step PC2, one modified layer ML parallel to the X axis may be formed, or one modified layer ML parallel to the Y axis may be formed, or the X axis One or more reformed layers ML not parallel to the above may be formed, or one or more reformed layers ML not parallel to the Y axis may be formed, The layer ML may be formed, the modified layers ML may not be parallel or parallel to each other, and a plurality of modified layers ML not intersecting each other may be formed, or orthogonal to each other or A plurality of oblique modified layers ML may be formed, or a curved or broken one or more modified layers ML may be formed, which are formed by such modified layers ML. The shape of the chip CP may be any shape such as a circle, an ellipse, a triangle, or a polygon of quadrilateral or more.
The modified layer forming means changes the characteristics, characteristics, properties, materials, compositions, configurations, dimensions, etc. of the wafer WF by applying laser light, electromagnetic waves, vibrations, heat, chemicals, chemical substances, etc. May be weakened, crushed, liquefied or hollowed, and an external force may be directly or indirectly applied to the wafer WF to form any modified layer ML as long as the wafer is singulated.

  In the adhesion area reducing step PC3, the infrared light may be partially applied to the base material BS by the light emission source 31, and the infrared light may be applied to the entire base material BS by relatively moving the light emission source 31 and the wafer WF. An infrared ray may be applied collectively to the entire base material BS, and the time for irradiating the base material BS with an infrared ray may be arbitrarily determined in consideration of the characteristics, characteristics, properties, materials, compositions, configurations, etc. of the base material BS. In addition to infrared light, electromagnetic waves such as ultraviolet light, visible light, sound waves, X-rays or gamma rays, or heat such as hot water or hot air may be used as the first predetermined energy. Can be arbitrarily determined in consideration of the characteristics, characteristics, properties, materials, composition, and configuration of the material, etc., and a concentration means such as a light collecting plate or collecting plate is adopted to concentrately apply the first energy to the base material BS. May be used as the light source 31 (Light Emitting Diode, light emitting diode) lamp, high pressure mercury lamp, low pressure mercury lamp, a metal halide lamp, a xenon lamp, may be employed to do a halogen lamp or the like, may be employed a combination them appropriately.

  The separation step PC4 may adopt a strip-like or sheet-like peeling sheet PT as a holding means, and is supported by an output shaft of a linear motion motor as a driving device, and by a pressure reducing means such as a pressure reducing pump or a vacuum ejector. The base material BS may be held by suction with a holding member capable of holding the base material BS, and the base material BS held by the holding member may be separated from the adhesive layer AL.

  The supporting member pasting step PC5 is a driving device and is supported by the output shaft of the linear motion motor as pressing means, and is a sheet holding member capable of holding the resin sheet RS by the depressurizing means such as a depressurizing pump or vacuum ejector. May be attached to the adhesive layer AL by pressing the resin sheet RS held by the holding member to the adhesive layer AL, and a frame member such as a ring frame may be attached to the outer edge of the resin sheet RS. Such frame members may be annular or non-annular.

  In the singulation step PC6, tension is applied to the resin sheet RS only in the front-rear direction, only the left-right direction, only the front-rear left-right direction, front-back, left-right other direction or radial direction to singulate the wafer WF. The frame member attached to the outer edge of the resin sheet RS may be held by a holding member, the frame member is separated from the wafer WF, tension is applied to the resin sheet RS, and the wafer WF is singulated The chip CP may be formed, and the external force applied to the wafer WF may be any force such as pressing force, tension, pressure, bending force, vibration and the like.

  In the removal process PC7, the chips CP may be removed one by one or in multiples from the resin sheet RS.

  In the chip bonding step PC8, the chips CP may be bonded to the substrate CB one by one or plural.

  In the adhesive force reducing step PC9, ultraviolet rays may be partially applied to the adhesive layer AL by the light emission source 91, and the light emission source 91 and the wafer WF may be relatively moved to apply ultraviolet rays to the entire adhesive layer AL. The ultraviolet light may be applied collectively to the entire adhesive layer AL, and the time for irradiating the ultraviolet light to the adhesive layer AL depends on the characteristics, characteristics, properties, material, composition, configuration, etc. of the adhesive layer AL. It can be arbitrarily determined in consideration of the predetermined second energy, in addition to ultraviolet rays, electromagnetic waves such as infrared rays, visible light, sound waves, X-rays or gamma rays, and heat such as hot water or hot air. Well, it can be arbitrarily determined in consideration of the characteristics, characteristics, properties, material, composition, and configuration etc. of the adhesive layer AL, and a light collecting plate and a collection plate which concentratedly apply the second energy to the adhesive layer AL You may adopt concentration means such as a board And any light source such as an LED (Light Emitting Diode) lamp, a high pressure mercury lamp, a low pressure mercury lamp, a metal halide lamp, a xenon lamp, a halogen lamp or the like as the light emission source 81, or any combination thereof The adhesive layer AL used in such an adhesive strength reduction step PC9 may be an electromagnetic wave such as ultraviolet light, visible light, sound wave, X-ray or gamma ray other than infrared light as the second predetermined energy. Any material may be used as long as the adhesive strength is reduced by the application of heat such as hot water or hot air, and it depends on the characteristics, characteristics, properties, material, composition, configuration, etc. of such an adhesive layer AL. The second energy applying means may be selected.

As the base material BS, for example, the thermally expandable base material 11 of the pressure-sensitive adhesive sheet 1a disclosed in Japanese Patent Application No. 2017-73236 can be exemplified. The pressure-sensitive adhesive sheet 1 a expands the heat-expandable fine particles (expandable fine particles SG) of the heat-expandable substrate 11 by applying heat as a predetermined first energy, and innumerable numbers on the surface of the pressure-sensitive adhesive layer 12. A convex portion is formed, and the adherend such as the semiconductor chip 51 can be easily removed from the adhesive layer 12, but the adhesion between the thermally expandable substrate 11 and the adhesive layer 12 is appropriately changed, When the thermally expandable fine particles of the thermally expandable substrate 11 are expanded, the adhesive sheet according to the present invention can be obtained if the adhesion area between the thermally expandable substrate 11 and the adhesive layer 12 is significantly reduced by innumerable convex portions. It can be AS.
The base material BS is an expandable fine particle which is expanded by the application of an electromagnetic wave such as ultraviolet light, visible light, sound wave, X-ray or gamma ray, heat such as hot water or hot air in addition to infrared rays as predetermined first energy. Anything may be used as long as it contains SG, and the first energy applying means may be selected according to the characteristics, characteristics, properties, materials, composition, configuration and the like of the base material BS.
The supporting member may be, for example, an elastic member such as rubber or resin other than the resin sheet BS2, a non-elastic member such as glass, metal, ceramic or the like, or wood, paper, cloth or the like. The adhesive sheet or adhesive sheet may have an adhesive layer, or may not have an adhesive layer or an adhesive layer, and the shape is not plate-like, for example, spherical, prismatic, etc. In the case where the tension does not extend even if tension is applied, an external force may be applied to the wafer WF by curving the support member, and the wafer WF may be singulated to form the chip CP. .

  The material, type, shape and the like of the adhesive sheet AS, the resin sheet RS and the wafer WF in the present invention are not particularly limited. For example, the adhesive sheet AS, the resin sheet RS, and the wafer WF may have a circular shape, an elliptical shape, a polygonal shape such as a triangle or a quadrangle, or any other shape. The wafer WF may be a semiconductor wafer such as a silicone semiconductor wafer or a compound semiconductor wafer. In addition, the adhesive sheet AS and the resin sheet RS are changed to functional and practical reading, for example, a label for information description, a label for decoration, a protective sheet, a dicing tape, a die attach film, a die bonding tape, a recording layer forming resin Any sheet such as a sheet, a film, a tape or the like may be used.

The drive device in the above embodiment includes a rotary motor, a linear motion motor, a linear motor, a single-axis robot, an electric machine such as an articulated robot having joints of two or three or more axes, an air cylinder, a hydraulic cylinder, a rodless Not only actuators such as cylinders and rotary cylinders can be employed, but also combinations of them directly or indirectly can be employed.
In the embodiment, in the case where a rotating member such as a roller is employed, a drive device may be provided to rotate the rotating member, or the surface of the rotating member or the rotating member itself may be deformed by rubber or resin. It may be constituted by a member, or the surface of the rotating member or the rotating member itself may be constituted by a member which does not deform, or one which presses an object to be pressed such as pressing means or pressing member such as pressing roller or pressing head. When employed, instead of or in combination with those exemplified above, a member such as a roller, a round bar, a blade, rubber, resin, sponge or the like is adopted, or pressure is applied by spraying a gas such as the atmosphere or gas. May be adopted, or those to be pressed may be constituted by a deformable member such as rubber or resin, or may be constituted by a member which is not deformed, a peeling plate, a peeling roller, etc. Means of peeling off When a member that peels off a material to be peeled off is employed, a member such as a plate-like member, a round bar, a roller or the like may be employed instead of or in combination with the members exemplified above. It may be composed of a deformable member such as rubber or resin, or may be composed of a non-deformable member, or support or hold a supported member such as a supporting (holding) means or a supporting (holding) member. If something is adopted, holding means such as mechanical chuck or chuck cylinder, Coulomb force, adhesive (adhesive sheet, adhesive tape), adhesive (adhesive sheet, adhesive tape), magnetic force, Bernoulli adsorption, suction adsorption, You may employ | adopt the structure which supports (supports) a to-be-supported member by drive apparatus etc. FIG.

AD: Adhesive layer for substrate AL: Adhesive layer AS: Adhesive sheet BS: Base material CB: Substrate CP: Semiconductor chip ML: Modified layer PC1: Sheet attaching process PC2: Modified layer forming process PC3: Adhesive area reducing process PC4 separation process PC5 support member pasting process PC6 individualization process PC7 removal process PC8 chip adhesion process PC9 adhesion decrease process RS resin sheet (support member)
SG: Expandable fine particles WF: Semiconductor wafer

Claims (5)

A sheet attaching step of attaching an adhesive sheet in which an adhesive layer is laminated on a base material containing expandable fine particles expanded by application of a predetermined first energy, to one surface of a semiconductor wafer;
A modified layer forming step of forming on the semiconductor wafer a modified layer in which the semiconductor wafer is singulated by applying an external force to the semiconductor wafer;
An adhesion area reducing step of applying the first predetermined energy to the base material to expand the expandable fine particles to reduce an adhesion area of the base material to the adhesive layer;
Separating the adhesive layer and the substrate;
A support member attaching step of attaching a support member to the adhesive layer which the base material is separated and exposed;
A singulation step of applying an external force to the semiconductor wafer to singulate the semiconductor wafer to form a semiconductor chip;
Removing the semiconductor chip from the support member;
And a chip bonding step of bonding the semiconductor chip to a substrate. In the supporting member attaching step, the supporting member is used in which the adhesive strength to the adhesive layer is set to be larger than the adhesive strength between the semiconductor chip and the adhesive layer.
In the removing step, the semiconductor chip is separated from the adhesive layer and removed from the support member,
The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor chip is bonded to the substrate through a substrate adhesive layer bonded to the substrate in the chip bonding step.   The adhesive layer is configured to be reduced in adhesive strength by the application of a predetermined second energy, and the predetermined second energy is applied to the adhesive layer between the separating step and the supporting member attaching step. The method of manufacturing a semiconductor device according to claim 1, further comprising an adhesion reducing step of applying energy to reduce the adhesion of the adhesive layer. In the supporting member attaching step, the supporting member is used in which the adhesive strength to the adhesive layer is set smaller than the adhesive strength between the semiconductor chip and the adhesive layer.
In the removing step, the semiconductor chip is removed from the support member together with the adhesive layer,
The method for manufacturing a semiconductor device according to claim 1, wherein in the chip bonding step, the semiconductor chip is bonded to the substrate via the adhesive layer. In the sheet attaching step, the adhesive sheet in which a substrate adhesive layer adhered to the substrate is laminated on the adhesive layer is attached to one surface of the semiconductor wafer via the substrate adhesive layer. ,
In the removing step, the semiconductor chip is removed from the support member together with the substrate adhesive layer;
2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor chip is bonded to the substrate through the adhesive layer for a substrate in the chip bonding step.