WO2016080324A1 - Dicing film - Google Patents

Abstract

The present invention provides a substrate film for a dicing film, the substrate film including a substrate layer and an outer surface layer disposed on one primary surface of the substrate layer. The substrate film for a dicing film is characterized in that the substrate layer contains low-density polyethylene, the outer surface layer contains an ionomer resin, and the MFR (measurement method: conforming to JIS K7210, measuring conditions: temperature of 190°C, load of 21.18 N) of the ionomer resin is 3 g/10 min or less. Further provided are: a dicing film having an adhesive layer provided on the primary surface of the outer surface layer side of the substrate film for the dicing film; and a blade dicing method using the dicing film.

Description

Dicing film

The present invention relates to a dicing film.
This application claims priority based on Japanese Patent Application No. 2014-234102 for which it applied to Japan on November 19, 2014, and uses the content here.

Conventionally, when manufacturing modularized parts by mounting electronic elements and optical elements on a small board, such as a camera module of a mobile phone, a plurality of boards for mounting parts are assembled into a single piece. A method using a collective substrate formed in (1) is known.

A method of forming a mounted substrate using a collective substrate is as follows. Components are mounted on the collective substrate, and then the collective substrate is held by an adhesive dicing film on the surface, and then the collective substrate is diced into individual pieces. And a mounted substrate in which components are mounted on each individual substrate is formed.

In recent years, various studies have been made on a dicing film for processing a semiconductor substrate used for manufacturing such a semiconductor device (see, for example, Patent Document 1).

This dicing film for semiconductor substrate processing generally has a base material (film base material) and an adhesive layer formed on the base material, and the substrate is fixed by the adhesive layer.
Between the adhesive layer and the substrate, it is necessary to have adhesiveness that does not allow the separated substrate to scatter during dicing (so-called chip jump).
The adhesive layer is usually composed of a resin composition containing an adhesive base resin, a photocurable resin, and the like so that the semiconductor chip can be easily picked up after the dicing process of the semiconductor substrate. . That is, when energy is applied to the adhesive layer after the dicing step, the resin composition is cured, the adhesiveness of the adhesive layer is lowered, and the semiconductor element can be easily picked up.

By the way, the cutting waste derived from the dicing film (base material waste) generated in the dicing step contaminates the substrate and reduces the yield of the mounted substrate. Therefore, it is necessary to reduce the generation of the cutting waste as much as possible. Further, in order to improve the picking accuracy of the substrate and further improve the productivity, the dicing film also has a characteristic that it can be expanded more uniformly and smoothly without being torn or cut (hereinafter referred to as expandability). Required. In addition, the dicing film is usually manufactured, stored, transported and wound in a roll shape. However, when blocking between the films occurs, the quality deteriorates, and thus blocking resistance is also required.

Various dicing films have been proposed for such demands. For example, in Patent Document 2, 90 to 70% by mass of an ionomer obtained by crosslinking a copolymer containing ethylene and (meth) acrylic acid as a polymer component with a metal ion, and an antistatic resin 10 to 10 containing a polyether component. A dicing film characterized by containing 30% by mass has been proposed.

JP 2009-245989 A JP 2011-210887 A

An object of the present invention is to provide a dicing film that suppresses chip fly during dicing and has a high effect of suppressing generation of cutting waste during dicing.

That is, the present invention is as follows.
(1) A substrate film for dicing film comprising a substrate layer and a surface layer disposed on one main surface of the substrate layer,
The substrate layer contains low density polyethylene,
The surface layer contains an ionomer resin,
A base film for a dicing film characterized in that the ionomer resin has an MFR (measurement method: JIS K 7210 compliant, measurement conditions: temperature 190 ° C., load 21.18 N) of 3 g / 10 min or less.
(2) The ionomer resin is obtained by crosslinking a terpolymer having ethylene, (meth) acrylic acid, and (meth) acrylic acid alkyl ester as a constituent component of the polymer with a metal ion. The substrate film for dicing film according to (1).
(3) The base film for a dicing film according to (2), wherein the metal ions are zinc ions.
(4) The base film for a dicing film according to any one of (1) to (3), wherein the low-density polyethylene has a melting point of 90 ° C. or higher and 140 ° C. or lower.
(5) The base film for a dicing film according to any one of (1) to (4), wherein the base material layer contains an antistatic agent.
(6) The substrate film for a dicing film according to any one of (1) to (5), wherein the surface layer is a cut layer cut by a dicing blade.
(7) A dicing film in which an adhesive layer is provided on the main surface of the surface layer side of the substrate film for dicing film according to any one of (1) to (6).
(8) The dicing film according to (7), wherein the adhesive layer contains a base resin having adhesiveness.
(9) The dicing film according to (7) or (8), wherein the base resin is an acrylic resin.
(10) The dicing film according to any one of (7) to (9), wherein the adhesive layer further contains a curable resin that is cured by application of energy.
(11) A dicing film with a semiconductor substrate in which a semiconductor substrate is laminated on the dicing film according to any one of (7) to (10).
(12) A blade dicing method using the dicing film according to any one of (7) to (11).

The present invention is a substrate film for dicing film comprising a substrate layer and a surface layer disposed on one main surface of the substrate layer, wherein the substrate layer contains low-density polyethylene. Since the surface layer contains an ionomer resin, it relates to a dicing film that can reduce cutting waste and is excellent in expandability and restoration property in the dicing step.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device using the dicing film for semiconductor substrate processing of this invention. It is a longitudinal cross-sectional view for demonstrating the method to manufacture the semiconductor device shown in FIG. 1 using the dicing film for semiconductor substrate processing of this invention. It is a longitudinal cross-sectional view which shows embodiment of the dicing film for semiconductor substrate processing of this invention.

Hereinafter, the dicing film of the present invention will be described in detail.
First, the dicing film 100 of the present invention used in the substrate manufacturing method (hereinafter, sometimes simply referred to as “adhesive tape 100”) will be described.

<Dicing film for semiconductor substrate processing>
FIG. 3 is a longitudinal sectional view showing an embodiment of the adhesive tape for processing a semiconductor substrate of the present invention.
In the following description, the upper side in FIG. 3 is referred to as “upper” and the lower side is referred to as “lower”.

The dicing film 100 (the dicing film of the present invention) includes a base film 4 for dicing film (hereinafter sometimes referred to as the base material 4) and an adhesive layer 2 laminated on the base film 4 for dicing film. It is comprised by the laminated body provided.
Hereinafter, the substrate film 4 for dicing film and the adhesive layer 2 included in the dicing film 100 will be described in detail.

The dicing film 100 has a function of reducing the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 by applying energy to the adhesive layer 2 included in the dicing film 100.
Examples of a method for applying energy to the adhesive layer 2 include a method of irradiating the adhesive layer 2 with energy rays and a method of heating the adhesive layer 2. Among them, the semiconductor chip 20 has an unnecessary heat history. Since it is not necessary to pass through, the method of irradiating the adhesive layer 2 with energy rays is preferably used. Therefore, below, the adhesive layer 2 will be described as a representative one in which the adhesiveness is reduced by irradiation with energy rays.

<Substrate 4>
The base material 4 is mainly made of a resin material and has a function of supporting the adhesive layer 2 provided on the base material 4. Although the thickness of the base material 4 is not specifically limited, For example, it is preferable that they are 10 micrometers or more and 300 micrometers or less, It is more preferable that they are 30 micrometers or more and 200 micrometers or less, It is more preferable that they are 80 micrometers or more and 200 micrometers or less. When the thickness of the base material 4 is within this range, dicing of the semiconductor substrate 7 can be performed with excellent workability.

In the present invention, the substrate 4 has two or more layers of a surface layer and a substrate layer. Thereby, the suppression effect of generation | occurrence | production of the cutting waste at the time of dicing becomes large.
Hereinafter, the surface layer 42 and the base material layer 41 of the base material 4 will be sequentially described.

<Surface layer>
The surface layer 42 which comprises the base film 4 for dicing films of this invention is a cutting layer cut with a dicing blade in one or some embodiment. The surface layer 42 contains an ionomer resin. Thus, the dicing blade can be cut only into the surface layer 42, and cutting waste can be remarkably reduced, and the expandability is improved when the dicing blade is expanded radially.
That is, in the dicing process, when cutting a semiconductor substrate or the like, frictional heat is generated between the dicing blade and the dicing film. Therefore, a contact part with a dicing blade is exposed to high temperature, and a base material will be in a molten state. For this reason, the molten resin clings to the blade surface and causes clogging and normal dicing is hindered, or the melted and softened substrate is pulled by the rotation of the dicing blade and stretched. This is one of the causes.

Since the surface layer 42, which is a cut layer cut by the dicing blade, contains an ionomer resin, the melt viscosity of the surface layer 42 is increased, so that the resin is clinging to the blade even when frictional heat is generated during dicing. There is no, and cutting scraps can be remarkably reduced.
Further, since the surface layer 42 which is a cut layer cut by a dicing blade contains an ionomer resin, the surface layer 42 becomes relatively flexible at normal temperature, and expandability when expanded radially by an expanding apparatus is preferable. .

The ionomer resin is a binary copolymer having ethylene and (meth) acrylic acid as constituents of a polymer, or ethylene, (meth) acrylic acid and (meth) acrylic acid ester as constituents of a polymer. It is a resin obtained by crosslinking a terpolymer with metal ions. Examples of the metal ion include potassium ion (K +), sodium ion (Na +), lithium ion (Li +), magnesium ion (Mg ++), and zinc ion (Zn ++).

As the metal ion, zinc ion (Zn ++) is preferable in that it stabilizes the cross-linked structure, thereby making it difficult to produce dicing waste, and also has high water resistance, and by cutting water during dicing, The surface layer 42 is preferable without expanding.

The binary copolymer having ethylene and (meth) acrylic acid as constituent components of the polymer, or the ternary copolymer having ethylene, (meth) acrylic acid and (meth) acrylic acid ester as constituent components of the polymer. The degree of neutralization by the cation in the carboxyl group of the polymer is preferably 40 to 75 mol%. Although the said ionomer resin may use what is obtained by synthesize | combining, a commercially available thing can also be used.

The ionomer resin is preferably a resin obtained by crosslinking a terpolymer having ethylene, (meth) acrylic acid, and (meth) acrylic acid alkyl ester as constituents of the polymer with metal ions. That is, by containing (meth) acrylic acid alkyl ester as a constituent component of the polymer, moderate flexibility and workability effects can be obtained.

The melting point of the ionomer resin is preferably 80 ° C. or higher. This is preferable because the heat resistance of the surface layer 42 is improved. The upper limit of the melting point of the ionomer resin is not particularly limited, but is substantially about 100 ° C.

The ionomer resin preferably has an MFR of 3 g / 10 min or less at a test temperature of 190 ° C. and a test load of 21.18 N in the test method shown in JIS K 7210 “Thermoplastic Plastic Flow Test Method”. Thereby, generation | occurrence | production of the cutting waste of the dicing film 100 can be suppressed. The lower limit value of the MFR of the ionomer resin is not particularly limited, but is substantially 0.8 g / 10 min.

The content of the ionomer resin in the surface layer 42 is preferably 60% or more and 100% or less. If it is 60% or more, it is preferable in terms of suppressing dicing waste.

The surface layer 42 may contain other resin materials.
The resin material is not particularly limited, and for example, polyethylene such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolymer. Polypropylenes such as polypropylene, polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, and other polyolefin resins, ethylene-vinyl acetate copolymers, ethylene- (meth) acrylic acid copolymers, ethylene- (meth) acrylic Olefin copolymers such as acid ester (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate Polyester resins such as tarate and polybutylene naphthalate, polyether ketones such as polyurethane, polyimide, polyamide, polyetheretherketone, polyethersulfone, polystyrene, fluorine resin, silicone resin, cellulose resin, styrene thermoplastic elastomer An olefin thermoplastic elastomer such as a polypropylene thermoplastic elastomer, an acrylic resin, a polyester thermoplastic elastomer, a polyvinyl isoprene, a polycarbonate, or a thermoplastic resin, or a mixture of these thermoplastic resins is used.

The surface layer 42 may contain additives such as antioxidants, fillers, and the like as long as the spirit of the invention is not impaired.

The thickness of the surface layer 42 is preferably thicker than the depth of cut into the surface layer by the dicing blade (hereinafter also referred to as the depth of cut) from the viewpoint of reducing cutting waste. The thickness of the surface layer is
The thickness is 10 to 140 μm, preferably 20 to 120 μm. The thickness of the surface layer is 10 to 90%, preferably 20 to 80% with respect to the thickness of the base film for dicing film.

The surface layer 42 may be composed of a laminate (multilayer body) in which a plurality of layers made of different resin materials are laminated.

<Base material layer>
The base material layer 41 which comprises the base film 4 for dicing films of this invention is demonstrated.
The base material layer 41 contains low density polyethylene. Thereby, when expand | expanding radially with an expand apparatus, expandability becomes favorable.
Low density polyethylene is preferable because it has a higher melting point and higher heat resistance than the ionomer resin, so that it does not melt by frictional heat during dicing and does not stick to the chuck table during dicing.

The low density polyethylene refers to polyethylene having a density of 0.880 g / cm 3 or more and less than 0.940 g / cm 3. The density of the low density polyethylene is particularly preferably 0.910 g / cm 3 or more and 0.930 g / cm 3 or less. The low density polyethylene is a polymer having a long chain branch (the branch chain length is not particularly limited) obtained by polymerizing an ethylene monomer by a high pressure method, so-called “low density polyethylene” or “very low density polyethylene”. And "linear low density polyethylene" obtained by polymerizing ethylene and an α-olefin monomer having 3 to 8 carbon atoms by a low pressure method (in this case, the length of the short chain branch is 1 to 6 carbon atoms) ), And a generic term for “ethylene-α-olefin copolymer elastomer” included in the above density range. The density of the low density polyethylene can be measured according to JIS K 7112.

The melting point of the low density polyethylene is preferably 90 ° C. or higher and 140 ° C. or lower. It is preferable at 100 ° C. or higher because of the heat resistance effect. Moreover, when it is 140 degrees C or less, the rigidity at normal temperature becomes low and it is preferable at the effect which expand property is excellent.

It is preferable that the content rate of the low density polyethylene of the base material layer 41 is 40% or more and 100% or less. If it is 40% or more, it is preferable in terms of the adhesiveness with the surface layer and the cost.

Here, the ionomer resin contained in the surface layer 42 is composed of a binary copolymer having ethylene and (meth) acrylic acid as constituents of the polymer, ethylene, (meth) acrylic acid and (meth) acrylic acid ester. It is a resin obtained by crosslinking a ternary copolymer as a constituent component of a polymer with metal ions, and contains ethylene as a monomer component.
Moreover, the monomer component of the low density polyethylene contained in the base material layer 41 is ethylene.
Since both the surface layer 42 and the base material layer 41 contain ethylene as a monomer component, in the base film 4 for dicing film, due to the effect of intermolecular interaction between the surface layer 42 and the base material layer 41, the surface layer 42 And the base material layer 41 can suppress delamination.

The base material layer 41 may contain other resin materials.
The resin material is not particularly limited, and examples thereof include linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene such as polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolypropylene. Polyolefin resins such as polypropylene, polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, etc., ionomers such as ethylene-vinyl acetate copolymer, zinc ion crosslinked body, sodium ion crosslinked body, ethylene- (meth) acrylic acid Copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, olefin copolymer such as ethylene-hexene copolymer, polyethylene Terephthalate, poly Polyester resins such as reethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, etc., polyether ketones such as polyurethane, polyimide, polyamide, polyether ether ketone, polyether sulfone, polystyrene, fluororesin, silicone resin, cellulose resin Olefin-based thermoplastic elastomers such as styrene-based thermoplastic elastomers and polypropylene-based thermoplastic elastomers, thermoplastic resins such as acrylic resins, polyester-based thermoplastic elastomers, polyvinyl isoprene and polycarbonate, and mixtures of these thermoplastic resins are used. It is done.

The base material layer 41 may contain an additive such as an antioxidant, a filler, and the like as long as the spirit of the invention is not impaired.

In one or more embodiments, the thickness of the base material layer 41 is 40 to 95 μm, or 60 to 80 μm, from the viewpoint of securing a strength that does not break the film when the film is stretched in the expanding step. Further, the thickness 41 of the base material layer is 40 to 95%, or 60 to 80% with respect to the thickness of the base film for dicing film.

The base material layer 41 may be composed of a laminate (multilayer body) in which a plurality of layers made of different resin materials are laminated.

The base material layer 41 preferably contains an antistatic agent. Thereby, generation | occurrence | production of the static electricity in a semiconductor element in a tape mounting process, a dicing process, and a pick-up process is suppressed or prevented exactly.
Although it does not specifically limit as this antistatic agent, For example, surfactant, permanent antistatic polymer (IDP), a metal material, a metal oxide material, a carbonaceous material etc. are mentioned, Among these, 1 type or 2 A combination of more than one species can be used.
Among these, examples of the surfactant include an anionic surfactant, a cationic surfactant, a nonionic surfactant, and an amphoteric surfactant.
As the permanent antistatic polymer (IDP), for example, all IDPs such as polyester amide series, polyester amide, polyether ester amide, polyurethane series and the like can be used.
In addition, examples of the metal material include gold, silver, copper, silver-coated copper, nickel, and the like, and these metal powders are preferably used.
Examples of the metal oxide material include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO2), and the like. Is preferably used.
Furthermore, examples of the carbon-based material include carbon nanotubes such as carbon black, single-walled carbon nanotubes, and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.
Among these, at least one of a surfactant, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black is preferable. Since these materials have low temperature dependency of resistivity, even when the substrate 4 is heated when dicing, the amount of change in the surface resistance value of the substrate layer 41 can be reduced. .

The content of the antistatic agent in the base material layer 41 is preferably 5% or more and 40% or less. If it is 5% or more, the antistatic performance is sufficiently exhibited, which is preferable. Moreover, it is preferable from the surface of cost that it is 40% or less.

The total thickness of the substrate film for dicing film of the present disclosure is 50 to 200 μm, preferably 80 to 150 μm in one or more embodiments. The thickness of the substrate film for dicing film can be appropriately set according to the type of the object to be diced. By setting the total thickness of the base film for dicing film to 50 μm or more, the substrate can be protected from impact when dicing the substrate.

<Adhesive layer>
The adhesive layer 2 has a function of adhering and supporting the semiconductor substrate 7 when the semiconductor substrate 7 is diced. In addition, the adhesive layer 2 is in a state in which the adhesiveness to the semiconductor substrate 7 is reduced by applying energy to the adhesive layer 2, and thus, the adhesive layer 2 and the semiconductor substrate 7 can be easily peeled off. Is.

The pressure-sensitive adhesive layer 2 having such a function is composed of a resin composition containing, as main materials, (1) an adhesive base resin and (2) a curable resin for curing the pressure-sensitive adhesive layer 2.
Hereinafter, each component contained in the resin composition will be described in detail.

(1) Base resin The base resin has adhesiveness, and is included in the resin composition in order to impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2 before irradiation of the energy layer to the adhesive layer 2. Is.

Such base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyvinyl ether resins (adhesives). Or well-known thing used as adhesion layer components like urethane type resin (adhesive) is mentioned, but it is preferred to use acrylic resin especially. Acrylic resins are preferably used as base resins because they are excellent in heat resistance and are relatively easy and inexpensive to obtain.

The acrylic resin refers to a polymer having a (meth) acrylic acid ester as a main monomer component (homopolymer or copolymer) as a base polymer.

Although it does not specifically limit as (meth) acrylic acid ester, For example, (meth) acrylic acid methyl, (meth) acrylic acid ethyl, (meth) acrylic acid propyl, (meth) acrylic acid isopropyl, (meth) acrylic acid butyl , Isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, (meth) Octyl acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, (meth ) Undecyl acrylate, dodecyl (meth) acrylate, (meth) acrylic acid (Meth) acrylic acid alkyl esters such as decyl, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, (meth) Examples include (meth) acrylic acid cycloalkyl esters such as cyclohexyl acrylate, (meth) acrylic acid aryl esters such as phenyl (meth) acrylate, and one or more of these are used in combination. be able to. Among these, (meth) acrylic acid alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and octyl (meth) acrylate It is preferable that The (meth) acrylic acid alkyl ester is particularly excellent in heat resistance, and can be obtained relatively easily and inexpensively.

In this specification, the term “(meth) acrylic acid ester” is used to include both acrylic acid esters and methacrylic acid esters.

Further, this acrylic resin preferably has a glass transition point of 20 ° C. or lower. Thereby, the adhesiveness excellent in the adhesive layer 2 can be exhibited before the energy layer is irradiated to the adhesive layer 2.

As the acrylic resin, a resin containing a copolymerizable monomer is used as a monomer component constituting the polymer, if necessary, for the purpose of modifying cohesive force, heat resistance and the like.

Such a copolymerizable monomer is not particularly limited. For example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth) Hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth) acrylate, (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid Carboxyl group-containing monomers, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol ( (Meth) acrylamide, N-methylolpropane (meta) Amide monomers such as acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, (meth) Amino group-containing monomers such as t-butylaminoethyl acrylate, cyano group-containing monomers such as (meth) acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene and isobutylene, styrene, α-methylstyrene, Styrenic monomers such as vinyl toluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, halo such as vinyl chloride and vinylidene chloride Gene atom-containing monomer, alkoxy group-containing monomer such as methoxyethyl (meth) acrylate, ethoxyethyl (meth) acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N- (meth) acryloylmorpholine, etc. Examples include monomers having a nitrogen atom-containing ring, and one or more of these can be used in combination.

The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on all monomer components constituting the acrylic resin.

Further, the copolymerizable monomer may be contained at the end of the main chain in the polymer constituting the acrylic resin, or may be contained in the main chain, and further, the end of the main chain and the main chain It may be included in both the inside and the inside.

Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking between polymers.

Examples of the polyfunctional monomer include 1,6-hexanediol (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and neopentyl glycol di (meth) acrylate. , Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerin di (meth) acrylate, epoxy (meth) acrylate, polyester ( And (meth) acrylate, urethane (meth) acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl di (meth) acrylate, etc., one or two of these It can be used in combination on.

Also, ethylene-vinyl acetate copolymer and vinyl acetate polymer can be used as copolymerizable monomer components.

Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. In addition, the polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method, or the like.

As described above, the acrylic resin obtained by polymerizing the monomer components described above is an acrylic resin having a carbon-carbon double bond in the side chain, in the main chain, or at the end of the main chain (“double” It is sometimes referred to as “bond-introducing acrylic resin”. When the acrylic resin is a double bond-introducing acrylic resin, even if the addition of the curable resin described later is omitted, the obtained adhesive layer 2 is allowed to exhibit the function as the adhesive layer 2 described above. Can do.

Such a double bond-introducing acrylic resin has one carbon-carbon double bond in each of the side chains of 1/100 or more of the side chains in the polymer constituting the acrylic resin. It is preferably a double bond-introducing acrylic resin (sometimes referred to as “double-bond side chain-introducing acrylic resin”). Thus, introducing a carbon-carbon double bond into the side chain of an acrylic resin is advantageous from the viewpoint of molecular design. This double bond side chain introduction type acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

A method for synthesizing such a double bond-introducing acrylic resin (that is, a method for introducing a carbon-carbon double bond into an acrylic resin) is not particularly limited. For example, a functional group as a copolymerizable monomer may be used. After synthesizing an acrylic resin containing a functional group (also referred to as a “functional group-containing acrylic resin”) by copolymerization using a monomer having the functional group in the functional group-containing acrylic resin, A compound having a functional group capable of reacting and a carbon-carbon double bond (sometimes referred to as a “carbon-carbon double bond-containing reactive compound”) is added to a functional group-containing acrylic resin as a carbon-carbon. Examples include a method of synthesizing a double bond-introducing acrylic resin by performing a condensation reaction or an addition reaction in a state where the energy bond curability (energy beam polymerizability) of the double bond is maintained.

As a control means for introducing a carbon-carbon double bond into an acrylic resin into 1/100 or more of all side chains, for example, a condensation reaction or addition to a functional group-containing acrylic resin Examples thereof include a method performed by appropriately adjusting the content of a reactive compound containing a carbon-carbon double bond that is a compound to be reacted.

Further, when a carbon-carbon double bond-containing reactive compound is subjected to a condensation reaction or addition reaction with a functional group-containing acrylic resin, the reaction can be effectively advanced by using a catalyst. Such a catalyst is not particularly limited, but a tin-based catalyst such as dibutyltin dilaurate is preferably used. The content of the tin-based catalyst is not particularly limited, but for example, it is preferably 0.05 parts by weight or more and 1 part by weight or less with respect to 100 parts by weight of the functional group-containing acrylic resin.

Examples of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include a carboxyl group, an acid anhydride group, a hydroxyl group, an amino group, an epoxy group, and an isocyanate. Examples of the combination of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include, for example, a carboxylic acid group (carboxyl group). Group) and an epoxy group, a combination of a carboxylic acid group and an aziridyl group, a combination of a hydroxyl group and an isocyanate group, and a combination of a hydroxyl group and a carboxyl group. Preferably a combination of a group and an isocyanate group Arbitrariness. Thereby, the reaction tracking between these functional groups A and B can be easily performed.

Furthermore, in the combination of these functional groups A and B, any functional group may be the functional group A of the functional group-containing acrylic resin or the functional group B of the carbon-carbon double bond-containing reactive compound. For example, in the case of a combination of a hydroxyl group and an isocyanate group, the hydroxyl group is the functional group A in the functional group-containing acrylic resin, and the isocyanate group is a functional group in the reactive compound containing a carbon-carbon double bond. The group B is preferred.

In this case, examples of the monomer having the functional group A constituting the functional group-containing acrylic resin include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Having a carboxylic group, those having an acid anhydride group such as maleic anhydride, itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth) acrylic acid 4-hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethyl (Cyclohexyl) methyl (meth) ac Hydroxyl groups such as rate, vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol monovinyl ether And those having an epoxy group such as glycidyl (meth) acrylate and allyl glycidyl ether.

Examples of the reactive compound containing a carbon-carbon double bond having a functional group B include those having an isocyanate group such as (meth) acryloyl isocyanate, (meth) acryloyloxymethyl isocyanate, 2- (meth) acryloyloxy. Examples include ethyl isocyanate, 2- (meth) acryloyloxypropyl isocyanate, 3- (meth) acryloyloxypropyl isocyanate, 4- (meth) acryloyloxybutyl isocyanate, m-propenyl-α, α-dimethylbenzyl isocyanate, and epoxy. Examples of the group having a group include glycidyl (meth) acrylate.

The acrylic resin preferably has a low content of low molecular weight substances from the viewpoint of preventing contamination of the semiconductor substrate 7 and the like when the semiconductor substrate 7 is diced. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably set to 500,000 to 5,000,000, and further preferably set to 800,000 to 3,000,000. If the weight-average molecular weight of the acrylic resin is less than 500,000 depending on the type of monomer component, etc., the anti-contamination property to the semiconductor substrate 7 and the like will be reduced, and adhesive residue will be left when the semiconductor chip 20 is peeled off. May occur.

The acrylic resin has a functional group (reactive functional group) having reactivity with a crosslinking agent or photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group). Is preferred. Thereby, since a crosslinking agent and a photoinitiator connect with the acrylic resin which is a polymer component, it can suppress or prevent that these crosslinking agents and a photoinitiator leak from the adhesion layer 2 exactly. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 is reliably reduced by the energy ray irradiation.

(2) Curable resin A curable resin is provided with the curability hardened | cured by irradiation of an energy ray, for example. As a result of this curing, the base resin is taken into the crosslinked structure of the curable resin, and as a result, the adhesive strength of the adhesive layer 2 is reduced.

As such a curable resin, for example, a low molecular weight having at least two polymerizable carbon-carbon double bonds that can be three-dimensionally cross-linked by irradiation with energy rays such as ultraviolet rays and electron beams as functional groups. A compound is used. Specifically, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, 1,4-butylene glycol di (meth) ) Esterified products of (meth) acrylic acid and polyhydric alcohols such as acrylate, polyethylene glycol di (meth) acrylate, glycerin di (meth) acrylate, Cyanurate compounds having a carbon-carbon double bond-containing group, such as relate oligomers, 2-propenyl-di-3-butenyl cyanurate, tris (2-acryloxyethyl) isocyanurate, tris (2-methacrylic) Loxyethyl) isocyanurate, 2-hydroxyethyl bis (2-acryloxyethyl) isocyanurate, bis (2-acryloxyethyl) 2-[(5-acryloxyhexyl) -oxy] ethyl isocyanurate, tris (1, 3-Diacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (4- (Acryloxy-n-butyl) iso Isocyanurate compounds having a carbon-carbon double bond-containing group such as nurate, commercially available oligoester acrylates, aromatic and aliphatic urethane acrylates, etc., and one of these Alternatively, two or more kinds can be used in combination. Among these, it is preferable that an oligomer having 6 or more functional groups is included, and an oligomer having 15 or more functional groups is more preferable. Thereby, curable resin can be hardened more reliably by irradiation of an energy ray. Moreover, it is preferable that such curable resin is urethane acrylate. Thereby, the effect that the adhesive crack at the time of the pick-up by moderate softness | flexibility can be suppressed is acquired.

The urethane acrylate is not particularly limited, and for example, a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diene). (Isocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) having a hydroxyl group in the terminal isocyanate urethane prepolymer obtained by reaction ( Examples thereof include those obtained by reacting (meth) acrylate (for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate, etc.)).

The curable resin is not particularly limited, but it is preferable that two or more curable resins having different weight average molecular weights are mixed. If such a curable resin is used, the degree of cross-linking of the resin by irradiation with energy rays can be easily controlled, and the pickup property of the semiconductor chip 20 can be improved. In addition, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

When the curable resin is a mixture of the first curable resin and the second curable resin, the weight average molecular weight of the first curable resin is preferably about 100 to 1000, preferably 200 to More preferably, it is about 500. The weight average molecular weight of the second curable resin is preferably about 1000 to 30000, more preferably about 1000 to 10000, and still more preferably about 2000 to 5000. Further, the number of functional groups of the first curable resin is preferably 1 to 5 functional groups, and the number of functional groups of the second curable resin is preferably 6 functional groups or more. By satisfying such a relationship, the effect can be exhibited more remarkably.

The curable resin is preferably blended in an amount of 5 parts by weight or more and 500 parts by weight or less, more preferably 10 parts by weight or more and 300 parts by weight or less, and more preferably 20 parts by weight or more. More preferably, it is blended at 200 parts by weight or less. By adjusting the blending amount of the curable resin as described above, the pickup property of the semiconductor chip 20 can be made excellent.

Note that this curable resin uses a double bond-introducing acrylic resin as the acrylic resin described above, that is, a carbon-carbon double bond is present in the side chain, main chain, or end of the main chain. When using what has, you may make it abbreviate | omit the addition to the resin composition. This is because, when the acrylic resin is a double bond-introducing acrylic resin, the pressure-sensitive adhesive layer 2 is formed by the function of the carbon-carbon double bond of the double bond-introducing acrylic resin by irradiation with energy rays. This is because the adhesive force of the pressure-sensitive adhesive layer 2 is reduced.

(3) Photopolymerization initiator In addition, the adhesive layer 2 is one whose adhesiveness to the semiconductor substrate 7 is reduced by irradiation with energy rays, but when ultraviolet rays or the like are used as energy rays, In order to facilitate the initiation of polymerization of the curable resin, it is preferable to contain a photopolymerization initiator.

Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethane-1-one, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1 -Propan-1-one, 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propan-1-one, benzyldiphenyl sulfide, Tetramethylthiuram monosulfide, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -Hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2 2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl Ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzyl dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione -2- (o-ethoxycarbonyl) oxime, benzophenone, benzoylbenzoic acid, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p- (meth) acrylic Benzophenone-4-carboxylic acid of acrylate such as oxyethoxybenzophenone, 1,4-butanediol mono (meth) acrylate, 1,2-ethanediol mono (meth) acrylate, 1,8-octanediol mono (meth) acrylate Ester, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloranthraquinone, camphorquinone, halogenated ketone, acyl phosphinoxide, acyl phosphonate, polyvinyl benzophenone, chlorothioxanthone, dodecyl thioxanthone, dimethyl Examples include thioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, 2,4,5-triallylimidazole dimer, and the like, and one or more of these may be used in combination. it can.

Of these, benzophenone derivatives and alkylphenone derivatives are preferred. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via this reactive functional group, and more function as a photopolymerization initiator. It can be demonstrated reliably.

The photopolymerization initiator is preferably blended in an amount of 0.1 to 50 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the base resin. . By adjusting the blending amount of the photopolymerization initiator as described above, the pickup property of the pressure-sensitive adhesive tape 100 becomes suitable.

(4) Crosslinking agent Furthermore, the curable resin may contain a crosslinking agent. Inclusion of the crosslinking agent can improve the curability of the curable resin.

The crosslinking agent is not particularly limited. For example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a urea resin crosslinking agent, a methylol crosslinking agent, a chelate crosslinking agent, an aziridine crosslinking agent, a melamine crosslinking agent, and a polyvalent crosslinking agent. Examples include metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, and carboxyl group-containing polymer-based crosslinking agents. Among these, an isocyanate type crosslinking agent is preferable.

Although it does not specifically limit as an isocyanate type crosslinking agent, For example, the trimer of the terminal isocyanate compound obtained by making the polyisocyanate compound of polyvalent isocyanate and the trimer of a polyisocyanate compound, and making a polyisocyanate compound and a polyol compound react. Or the blocked polyisocyanate compound etc. which blocked the terminal isocyanate urethane prepolymer with phenol, oximes, etc. are mentioned.

Examples of the polyvalent isocyanate include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenyl ether diisocyanate, 4 , 4 '-[2,2-bis (4-phenoxyphenyl) propane] diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, etc. It is, can be used singly or in combination of two or more of them. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.

The crosslinking agent is preferably blended in an amount of 0.01 to 50 parts by weight, more preferably 5 to 50 parts by weight, based on 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the pickup property of the pressure-sensitive adhesive tape 100 becomes suitable.

(5) Other components In addition to the components (1) to (4) described above, the resin composition constituting the pressure-sensitive adhesive layer 2 includes, as other components, an antistatic agent, a tackifier, and an anti-aging agent. , An adhesion regulator, a filler, a colorant, a flame retardant, a softener, an antioxidant, a plasticizer, a surfactant, and the like may be contained.

The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably 1 μm or more and 30 μm or less, more preferably 5 μm or more and 30 μm or less, and still more preferably 10 μm or more and 20 μm or less. By making the thickness of the pressure-sensitive adhesive layer 2 within such a range, the pressure-sensitive adhesive layer 2 exhibits a good adhesive force before applying energy to the pressure-sensitive adhesive layer 2, and after applying energy to the pressure-sensitive adhesive layer 2, Good peelability is exhibited between the adhesive layer 2 and the semiconductor substrate 7.

Next, the semiconductor substrate processing dicing film 100 having such a configuration can be manufactured as follows, for example.

<Manufacturing method of dicing film for semiconductor substrate processing>
First, a base film 4 for dicing film is prepared, and the adhesive layer 2 is formed on the base film 4 for dicing film.

The production method of the substrate film 4 for dicing film is not particularly limited, and includes known methods such as an extrusion method using a T die or a circular die, a calendar method, etc. The thickness of the substrate film 4 for dicing film From the viewpoint of accuracy, an extrusion method using a T die is preferable.

Hereinafter, an extrusion method using a T die will be described.

First, the resin component which comprises the surface layer 42 and the base material layer 41 is each dry blended or melt-kneaded, and each layer forming resin is obtained. Then, each layer forming resin is supplied to a screw-type extruder, extruded from a multilayer T die adjusted to 180 to 240 ° C. into a film, and cooled while passing through a cooling roll adjusted to 10 to 50 ° C. Wind up. Alternatively, after each layer forming resin is once obtained as pellets, it may be extruded as described above. The thickness of each layer formed can be adjusted by adjusting the screw speed of the extruder.

In the process of winding the film by cooling while passing through the cooling roll, the film is wound substantially unstretched from the viewpoint of securing a strength sufficient to prevent the film from being broken at the time of expansion and improving the restoration property after expansion. It is preferable. Substantially non-stretching means that no positive stretching is performed, and includes non-stretching or slight stretching that does not affect the warpage of the substrate during dicing. Usually, the film may be pulled to such an extent that no sagging occurs when the film is wound.

In addition, the adhesive layer 2 is obtained by applying or spraying a liquid material obtained by dissolving a resin composition, which is a constituent material of the adhesive layer 2, in a solvent to form a varnish on the substrate film 4 for dicing film. It can be obtained by volatilizing to form the adhesive layer 2.

In addition, although it does not specifically limit as a solvent, For example, methyl ethyl ketone, acetone, toluene, a dimethylformaldehyde etc. are mentioned, Among these, it can use 1 type or in combination of 2 or more types.

Further, the application or dispersion of the liquid material onto the substrate film 4 for dicing film can be performed using a method such as die coating, curtain die coating, gravure coating, comma coating, bar coating, and lip coating.

Next, the base material 4 is left in the thickness direction of the adhesive layer 2 so that the center side and the outer peripheral side are separated from the adhesive layer 2 formed on the base film 4 for dicing film. By removing a part of the pressure-sensitive adhesive layer 2 in an annular shape, the pressure-sensitive adhesive layer 2 is provided with a center portion 122 and an outer peripheral portion 121.

As a method for removing a part of the adhesive layer 2 in an annular shape, for example, after punching out so as to surround a region to be removed, a method of removing the adhesive layer 2 located in the punched region can be mentioned.

Further, the punching of the region to be removed can be performed using, for example, a method using a roll mold or a method using a press mold. Especially, the method of using the roll-shaped metal mold | die which can manufacture the adhesive tape 100 continuously is preferable.

In this step, a part of the adhesive layer 2 is punched into a ring shape (circular shape) to form the center part 122 and the outer peripheral part 121. However, the shape of the part of the adhesive layer 2 punched out is the semiconductor device described above. In this manufacturing method, the outer peripheral portion 121 of the adhesive layer 2 may have any shape as long as the outer peripheral portion 121 can be fixed by the wafer ring 9. Specifically, examples of the shape to be punched include, in addition to the circular shape described above, an elliptical shape such as an elliptical shape and a saddle shape, and a polygonal shape such as a quadrangular shape and a pentagonal shape.

Next, a dicing film 100 in which the pressure-sensitive adhesive layer 2 is coated with the separator is obtained by laminating a separator on the pressure-sensitive adhesive layer 2 formed on the base film 4 for dicing film.

The method for laminating the separator on the adhesive layer 2 is not particularly limited, and for example, a laminating method using a roll or a laminating method using a press can be used. Among these, a laminate method using a roll is preferable from the viewpoint of productivity that can be continuously produced.

The separator is not particularly limited, and examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

Further, since the separator is peeled off when the dicing film 100 is used, a separator whose surface is subjected to a release treatment may be used. Examples of the release treatment include a treatment for coating a release agent on the separator surface and a treatment for forming fine irregularities on the separator surface. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based agents.

Through the steps as described above, the dicing film 100 covered with the separator can be formed.

In addition, the dicing film 100 covered with the separator manufactured in this embodiment is used after the dicing film 100 is peeled from the separator in the semiconductor device manufacturing method using the dicing film 100 described above.

Further, when peeling off the separator from the adhesive layer 2 covered by the separator, it is preferable to peel the separator at an angle of 90 ° to 180 ° with respect to the surface of the adhesive layer 2. By setting the angle at which the separator is peeled within the above range, peeling at other than the interface between the pressure-sensitive adhesive layer 2 and the separator can be reliably prevented.

Next, a semiconductor device manufactured using the dicing film of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the dicing film of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

A semiconductor device 10 illustrated in FIG. 1 is a QFP (Quad Flat Package) type semiconductor package, and includes a semiconductor chip (semiconductor element) 20, a die pad 30 that supports the semiconductor chip 20 via an adhesive layer 60, and the semiconductor chip 20. And leads 40 electrically connected to each other and a mold part (sealing part) 50 for sealing the semiconductor chip 20.

The die pad 30 is made of a metal substrate and functions as a support for supporting the semiconductor chip 20.

The die pad 30 includes, for example, a metal substrate made of various metal materials such as Cu, Fe, Ni, and alloys thereof (for example, Cu-based alloys and iron / nickel-based alloys such as Fe-42Ni), The surface of the metal substrate is plated with silver or Ni—Pd, and the surface of the Ni—Pd plating is provided with a gold plating (gold flash) layer provided to improve the stability of the Pd layer. Are used.

Further, the planar view shape of the die pad 30 usually corresponds to the planar view shape of the semiconductor chip 20 and is, for example, a square such as a square or a rectangle.

A plurality of leads 40 are provided radially on the outer periphery of the die pad 30.
An end portion of the lead 40 opposite to the die pad 30 protrudes (exposes) from the mold portion 50.

The lead 40 is made of a conductive material, and for example, the same material as that of the die pad 30 described above can be used.

Further, the lead 40 may be tin-plated on the surface thereof. Thereby, when the semiconductor device 10 is connected to the terminals provided on the mother board via the solder, the adhesion between the solder and the leads 40 can be improved.

The semiconductor chip 20 is fixed (fixed) to the die pad 30 via the adhesive layer 55.

The adhesive layer 55 is not particularly limited, and is formed using various adhesives such as an epoxy adhesive, an acrylic adhesive, a polyimide adhesive, and a cyanate adhesive. Further, the adhesive layer 55 may include metal particles such as silver powder or copper powder. As a result, the thermal conductivity of the adhesive layer 55 is improved, so that heat is efficiently transferred from the semiconductor chip 20 to the die pad 30 via the adhesive layer 55, so that heat dissipation during driving of the semiconductor chip 20 is improved. .

The semiconductor chip 20 has an electrode pad 21, and the electrode pad 21 and the lead 40 are electrically connected by a wire 22. Thereby, the semiconductor chip 20 and each lead 40 are electrically connected.

The material of the wire 22 is not particularly limited, but the wire 22 can be composed of, for example, Au wire or Al wire.

Further, the die pad 30, each member provided on the upper surface side of the die pad 30, and the inner portion of the lead 40 are sealed by the mold part 50. As a result, the outer end portion of the lead 40 protrudes from the mold portion 50 made of a cured product of the semiconductor sealing material.

The semiconductor device having such a configuration is manufactured, for example, as follows using the dicing film of the present invention.

<Method for Manufacturing Semiconductor Device>
FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the dicing film of the present invention. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.

First, the dicing film 100 which has the base material 4 and the adhesion layer 2 laminated | stacked on the base material 4 is prepared (refer Fig.2 (a)).

Although this dicing film 100 is comprised with the dicing film of this invention, the detailed description shall be given later.

Next, as shown in FIG. 2 (b), the dicing film 100 is placed on a dicer table (not shown), and the surface of the semiconductor substrate 7 on the side without the semiconductor element is placed on the center portion 122 of the adhesive layer 2. The semiconductor substrate 7 is stacked by placing it on top and pressing lightly.

In addition, after adhering the semiconductor substrate 7 to the dicing film 100 in advance, it may be installed on a dicer table.

Next, the semiconductor substrate 7 is cut (diced) using a dicing saw (blade) (not shown) to separate the semiconductor substrate 7 (see FIG. 2C).

At this time, cutting water is applied to the semiconductor substrate 7 for the purpose of preventing the dust generated during the cutting of the semiconductor substrate 7 from being scattered and further suppressing the semiconductor substrate 7 from being heated unnecessarily. The semiconductor substrate 7 is cut while supplying.

Further, the dicing film 100 has a buffering action, and prevents cracks, chips, etc. when the semiconductor substrate 7 is cut.

Furthermore, the cutting of the semiconductor substrate 7 using a blade is performed so as to reach the middle of the base material 4 in the thickness direction, as shown in FIG. Thereby, the semiconductor substrate can be surely separated.

Next, the adhesiveness with respect to the semiconductor substrate 7 of the adhesion layer 2 is reduced by giving energy to the adhesion layer 2 with which the dicing film 100 is provided.
As a result, peeling occurs between the adhesive layer 2 and the semiconductor substrate 7.

The method of applying energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with energy rays, a method of heating the adhesive layer 2, and the like. It is preferable to use a method of irradiating a wire from the substrate 4 side of the adhesive tape 100.

Such a method does not require the semiconductor chip 20 to go through an unnecessary thermal history, and energy can be imparted to the adhesive layer 2 relatively easily and efficiently. It is done.

Examples of energy rays include particle beams such as ultraviolet rays, electron beams, and ion beams, or combinations of two or more of these energy rays. Among these, it is particularly preferable to use ultraviolet rays. According to ultraviolet rays, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 can be efficiently reduced.

Next, the dicing film 100 is radially expanded by an expanding device (not shown), and the separated semiconductor substrate 7 (semiconductor chip 20) is opened at regular intervals (see FIG. 2D), and then the semiconductor chip. 20 is in a state of being pushed up using a needle or the like, and in this state, pickup is performed by suction or the like using a vacuum collet or air tweezers (see FIG. 2E).

Although the semiconductor device 10 is obtained by the method for manufacturing a semiconductor device having the steps as described above, the dicing film 100 can be applied to the manufacture of various types of semiconductor packages without being limited to such a case. , Dual Inline Package (DIP), Plastic Leaded Chip Carrier (PLCC), Low Profile Quad Flat Package (LQFP), Small Outline Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), Ball Grid Array (BGA), Chip Size Package (C P), matrix array package Ball Grid Array (MAPBGA), can be applied to a memory or logic system element such as a chip-stacked chip size package.

As mentioned above, although the dicing film for semiconductor substrate processing of this invention was demonstrated, this invention is not limited to these.

Next, specific examples of the present invention will be described.
In addition, this invention is not limited to description of these Examples at all.

<Raw material>
The raw material used for preparation of the base film for dicing films of Examples and Comparative Examples is as follows.
Ionomer resin "High Milan 1855" (Mitsui DuPont Polychemicals; metal atom Zn, MFR1.0 melting point 86 ° C)
Ionomer resin "High Milan 1554" (Mitsui DuPont Polychemicals; metal atom Zn, MFR1.3 melting point 97 ° C)
Ionomer resin "High Milan 1650" (Mitsui DuPont Polychemicals; metal atom Zn, MFR1.5 melting point 96 ° C)
Ionomer resin “High Milan 1652” (Mitsui DuPont Polychemicals; metal atom Zn, MFR 5.5 melting point 98 ° C.)
Ionomer resin "High Milan 1601" (Mitsui DuPont Polychemicals; metal atom Na, MFR1.3 melting point 97 ° C)
Low density polyethylene LDPE “L211” (manufactured by Sumitomo Chemical; melting point 113 ° C.)
Low density polyethylene LDPE “1520F” (Ube Maruzen polyethylene, 114 ° C.)
Antistatic agent “Pelestat 212” (manufactured by Sanyo Chemical Industries; polyether / polyolefin block polymer)
Antistatic agent "Pelestat 230" (manufactured by Sanyo Chemical Industries; polyether / polyolefin block polymer)
Antistatic agent "Electro Stripper AC" (manufactured by Kao; amphoteric surfactant)

<Raw material for adhesive layer>
The following raw materials were used for the pressure-sensitive adhesive layers of Examples and Comparative Examples.
<Base resin>
The following acrylic copolymer was obtained by mixing butyl acrylate (BA) and acrylic acid (AA) in the following weight ratio and solution polymerizing in a toluene solvent by a conventional method.
Acrylic copolymer 1 (BA / AA = 90/10, weight average molecular weight 600,000)
<UV curable resin>
Urethane acrylate 1 (Shin Nakamura Chemical Co., Ltd., product name: UA-33H): 20 parts by weight <crosslinking agent>
Polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.)
<Photoinitiator>
Benzophenone photoinitiator (trade name “Irgacure 651”, manufactured by Ciba Specialty Chemicals Co., Ltd.)

(Example 1)
<Creation of substrate film for dicing film>
An ionomer resin “Himiran 1855” was used as the surface layer forming resin.
Further, 80% by mass of low density polyethylene LDPE “F222NH” and 20% by mass of the antistatic agent “Pelestat 212” were dry blended to obtain a base layer forming resin. Then, each obtained layer forming resin is supplied to each extruder adjusted to 200 ° C., and extruded from a two-layer die at 200 ° C. so as to be in the order of surface layer / base material layer. It cooled and solidified with the set cooling roll, wound up in the substantially unstretched state, and obtained the base film for dicing films of a 2 layer structure. In Example 1, the thickness of the surface layer was 100 μm, the thickness of the base material layer was 50 μm, and the total thickness of the base film for dicing film was 150 μm.

<Creating a dicing film>
A pressure-sensitive adhesive layer was provided on the surface layer of the base film for dicing film of Example 1 produced as described above to obtain a dicing film. Specifically, after 49.8% by mass of the base resin, 39.8% by mass of the UV curable resin, 6.5% by mass of the crosslinking agent, and 3.9% by mass of the photoinitiator were dissolved and mixed in ethyl acetate. Then, after bar coating was applied on the surface layer of the substrate film for dicing film so that the thickness after drying was 20 μm, it was dried at 80 ° C. for 10 minutes to obtain a dicing film.

(Examples 2 to 9, Comparative Examples 1 and 2)
A substrate film for dicing film and a dicing film were produced in the same manner as in Example 1 except that the resin composition was changed as shown in Table 1.

<Cutting properties>
The cutting waste characteristics were evaluated as follows. First, a glass epoxy dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) (60 mm x 15 mm x 1.2 mm thickness) was attached to the dicing films of Examples 1 to 9 and Comparative Examples 1 and 2, and dicing was performed under the following conditions. The cutting line was observed, the number of cutting scraps having a length of 100 μm or more coming out from the cutting line was counted, the cutting scrap characteristics were evaluated, and the evaluation results are shown in Table 1.
The determination results are as follows.
The number of cutting waste is 0-5: ◎
Number of cutting scraps 6-10: ○
The number of cutting scraps is 11 or more: ×
[Dicing condition]
Dicing machine: “DAD-3350” (trade name, manufactured by DISCO)
Dicing blade: “P08-SDC220” (trade name, manufactured by DISCO)
Blade rotation speed: 30000 rpm
Cutting speed: 100mm / sec
Cutting: 100 μm from the dicing film surface (the cutting depth for the surface layer is 80 μm)
Cut size: 10mm x 10mm
Blade cooler: 2L / min

<Fusing resistance>
The anti-fusing property was evaluated as follows. First, a glass epoxy dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) (60 mm x 15 mm x 1.2 mm thickness) was attached to the dicing films of Examples 1 to 9 and Comparative Examples 1 and 2, and dicing was performed under the following conditions. Carried out. Under the present circumstances, the melt | fusion characteristic of the base film to a dicer table was evaluated. After dicing, whether or not fusion to the dicer table was observed was evaluated.
No fusion to the dicer table: ○
Fusion to the dicer table can be seen: ×
[Dicing condition]
Dicing machine: “DAD-3350” (trade name, manufactured by DISCO)
Dicing blade: “P08-SDC220” (trade name, manufactured by DISCO)
Blade rotation speed: 30000 rpm
Cutting speed: 100mm / sec
Cutting: 100 μm from the dicing film surface (the cutting depth for the surface layer is 80 μm)
Cut size: 2mm x 2mm
Blade cooler: 0.5L / min

 

As shown in Table 1, in the dicing films of Examples 1 to 9, the base material was composed of two layers of a base material layer and a surface layer disposed on one main surface of the base material layer. Since the material layer contains low density polyethylene and the surface layer contains an ionomer resin, the material layer was excellent in cutting dust characteristics and anti-fusing characteristics.
On the other hand, the dicing film of Comparative Example 1 was inferior in the anti-fusing property because the substrate was composed solely of an ionomer resin.
Moreover, since the base material consists only of low density polyethylene, the dicing film of the comparative example 2 was inferior in cutting waste characteristics.

By using the description film for dicing film of the present invention, the cutting waste can be reduced in the dicing process, and the expandability and the recoverability are excellent, which is industrially useful.

4 base material 41 base material layer 42 surface layer 7 semiconductor substrate 9 wafer ring 10 semiconductor device 20 semiconductor chip 21 electrode pad 22 wire 30 die pad 40 lead 50 mold part 60 adhesive layer 100 dicing film 121 outer peripheral part 122 central part

Claims (12)

1. A base film for a dicing film comprising a base layer and a surface layer disposed on one main surface of the base layer,
   The substrate layer contains low density polyethylene,
   The surface layer contains an ionomer resin,
   A base film for a dicing film characterized in that the ionomer resin has an MFR (measurement method: JIS K 7210 compliant, measurement conditions: temperature 190 ° C., load 21.18 N) of 3 g / 10 min or less.
2. The ionomer resin is obtained by crosslinking a terpolymer having ethylene, (meth) acrylic acid, and (meth) acrylic acid alkyl ester as a constituent component of the polymer with a metal ion. Item 8. A substrate film for dicing film according to Item 1.
3. The base film for a dicing film according to claim 2, wherein the metal ions are zinc ions.
4. The base film for a dicing film according to any one of claims 1 to 3, wherein the low-density polyethylene has a melting point of 90 ° C or higher and 140 ° C or lower.
5. The base film for a dicing film according to claim 1, wherein the base material layer contains an antistatic agent.
6. The base film for a dicing film according to any one of claims 1 to 5, wherein the surface layer is a cut layer cut by a dicing blade.
7. A dicing film in which an adhesive layer is provided on the main surface of the surface layer side of the base film for dicing film according to any one of claims 1 to 6.
8. The dicing film according to claim 7, wherein the adhesive layer contains a base resin having adhesiveness.
9. The dicing film according to claim 7 or 8, wherein the base resin is an acrylic resin.
10. The dicing film according to any one of claims 7 to 9, wherein the adhesive layer further contains a curable resin that is cured by application of energy.
11. A dicing film with a semiconductor substrate, wherein a semiconductor substrate is laminated on the dicing film according to any one of claims 7 to 10.
12. A blade dicing method using the dicing film according to any one of claims 7 to 11.

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