JP2019102693A - Manufacturing method of semiconductor device - Google Patents

Abstract

To provide a manufacturing method of semiconductor device capable of reducing SDBG process-specific disadvantages, where semiconductor chips push each other to aggravate chipping phenomenon, as much as possible, when imprint is performed.SOLUTION: A manufacturing method of semiconductor device has a step of sticking a first adhesive sheet AS1 to one side of a semiconductor wafer WF, a step of forming a modified layer ML for individualizing the semiconductor wafer WF by external force, a step of grinding from the other side of the semiconductor wafer WF, a step of forming a semiconductor chip CP by imparting an external force to the semiconductor wafer WF and individualizing, a second sheet sticking step PC6 of sticking a second adhesive sheet AS2 to the other side of the semiconductor chip CP, and a step of exfoliating the first adhesive sheet AS1 from the semiconductor chip CP. In the pre-stage of the second sheet sticking step PC6, a step of attaching a support member RF to the outside of the second adhesive sheet AS2 is executed.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method of manufacturing a semiconductor device according to the SDBG (Stealth Dicing Before Grinding) process.

  Conventionally, in the process of singulating a semiconductor wafer (hereinafter, also simply referred to as a “wafer”) to form a semiconductor chip (hereinafter, also simply referred to as a “chip”), a modified layer is formed on the wafer before grinding the wafer. A so-called SDBG (Stealth Dicing Before Grinding) process (hereinafter referred to as "SDBG (Stealth Dicing Before Grinding"), in which a wafer is formed from a surface opposite to the circuit surface toward the modifying layer to separate the wafer into pieces. There is known a method of manufacturing a semiconductor device simply by the “SDBG process” (see, for example, the second embodiment of Patent Document 1).

Unexamined-Japanese-Patent No. 2017-130598 JP, 2015-038948, A Unexamined-Japanese-Patent No. 2015-1981 18 Unexamined-Japanese-Patent No. 2017-041562

However, in the conventional SDBG process as described in Patent Document 1, in the wafer dividing step (grinding step, chip forming step), the grinding load of the grinding wheel 23 starts from the modified layer 19 (modified layer) as a starting point. In order to form a crack and separate the wafer W (semiconductor wafer) by the crack to form a chip C (semiconductor chip), the semiconductor chips after the chip forming process are in a state of being in contact with each other, This contact is likely to cause a so-called chipping phenomenon in which the outer edge is finely chipped.
Therefore, as a result of intensive investigations, the inventor has firstly obtained the first adhesive sheet from the semiconductor chip with the protective tape 17 (first adhesive sheet) attached to the expand tape 70 (second adhesive sheet) in the conventional SDBG process. When the semiconductor chip is transferred (hereinafter, also simply referred to as “transfer”) by peeling off the semiconductor chip, the semiconductor chips are not only in contact with one another, but are mutually pressed on the second adhesive sheet, As a result, it was found that the disadvantages inherent in the SDBG process that promote the chipping phenomenon occurred. Such an operation can similarly occur in the case of an SDBG process in which an external force such as vibration is applied to the semiconductor wafer to form a semiconductor chip after grinding the semiconductor wafer.
The function of promoting the chipping phenomenon will be described with reference to FIG. 3. In the tape sticking step (second sheet sticking step) in the conventional SDBG process, as shown in FIG. 3 (A), the second adhesive sheet AS2 It is simultaneously affixed to both the semiconductor chip CP and the ring frame RF while being given a predetermined tension F1 so as not to be slackened after the application. As a result, the second adhesive sheet AS2 is attached to the semiconductor chip CP and the ring frame RF while trying to shrink, but since the first adhesive sheet AS1 is attached to a plurality of semiconductor chips CP, The shrinking force is sealed by the reaction force of the first adhesive sheet AS, and as shown in FIG. 3B, it becomes an internal stress F2 and remains in the second adhesive sheet AS2. In such a state, when the first adhesive sheet AS1 is peeled from the semiconductor chip CP, the internal stress F2 of the second adhesive sheet AS2 sealed by the first adhesive sheet AS is released, as shown in FIG. 3C. Thus, the semiconductor chips CP mutually push on the second adhesive sheet AS2, and the chipping promotes the chipping phenomenon CG.
Here, for example, in a normal dicing process for forming a groove using a blade as described in Patent Document 2, a so-called DBG (Dicing Before Grinding) process (hereinafter, also simply referred to as "DBG process"), etc. Even if transfer is performed, since the distance between the semiconductor chips (kerf width) is about 30 to 40 μm, the above-mentioned disadvantages unique to the SDBG process did not occur.
Further, for example, in a so-called stealth dicing process in which a modified layer is formed after grinding a semiconductor wafer as described in Patent Document 3 and tension is applied to the semiconductor wafer to form a semiconductor chip, the modified layer Also, the above-described SDBG process does not have the above-mentioned disadvantages because the distance between the modified layers is increased to form a semiconductor chip after forming the.
For example, in Patent Document 4, the ring frame RF (supporting member) is attached to the outer edge of the second adhesive sheet at a stage prior to attaching the adhesive sheet AS (second adhesive sheet) to the wafer WF (semiconductor chip). Although a method of performing the affixing step is disclosed, it does not present a method of overcoming the disadvantages inherent in the SDBG process described above.

  It is an object of the present invention to provide a method of manufacturing a semiconductor device capable of minimizing the disadvantages inherent in the SDBG process in which semiconductor chips push each other to promote chipping phenomenon when transfer is performed. .

  The present invention adopts the configuration described in the claims.

According to the present invention, since the support member attaching step is performed at a stage prior to the second sheet attaching step, the second adhesive sheet can be attached to the second adhesive sheet while the support member is attached. (2) After the adhesive sheet is attached to the support member, the tension is dispersed and the tension is balanced. Therefore, even if the transfer is performed through the second sheet bonding step and the first sheet peeling step, the internal stress is not released by the second adhesive sheet, and the semiconductor chips are mutually transferred when the transfer is performed. The disadvantages inherent in the SDBG process, which causes pressure and promotes the chipping phenomenon, can be minimized.
Furthermore, if the chip formation process is also performed in the grinding process, the manufacturing process of the semiconductor device can be simplified.
In addition, if the interval expansion step is performed, even if there is a semiconductor chip which is still connected to the adjacent semiconductor chip in the chip formation step, they can be separated.
Furthermore, if the tension application step is performed, even if the tension of the second adhesive sheet attached to the support member in the support member attachment step is insufficient, the tension of the second adhesive sheet is increased, and the second of the predetermined tension The adhesive sheet can be attached to the semiconductor chip.
Moreover, if the tension relaxation process is performed, even if the tension of the second adhesive sheet attached to the support member in the support member attachment process is excessive, the tension of the second adhesive sheet is reduced, and the second tension of the predetermined adhesive (2) An adhesive sheet can be attached to a semiconductor chip.

Explanatory drawing of the manufacturing method of the semiconductor device concerning the embodiment of the present invention. Explanatory drawing of the conventional transcription method and the transcription method of this invention. Explanatory drawing of a prior art example.

Hereinafter, embodiments of the present invention will be described based on the drawings.
In the present embodiment, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane. Do. Furthermore, in the present embodiment, when referring to a direction from the front in FIG. 1 parallel to the Y-axis and indicating a direction without specifying a figure, “upper” is “down” in the arrow direction of the Z-axis. Is the opposite direction, “left” is the arrow direction of the X axis, “right” is the opposite direction, and “front” is the opposite direction in the front direction in FIG. 1 parallel to the Y axis. Moreover, since FIGS. 1-3 is the figure seen from the direction same as the direction described to (A) of each figure, the arrow which shows the direction except (A) of each figure is abbreviate | omitted.

  In the method of manufacturing a semiconductor device according to the present invention, the first sheet sticking step PC1 of sticking the first adhesive sheet AS1 to one surface of the wafer WF, and modification to become the starting point of dividing the wafer WF by application of external force. A modified layer forming step PC2 for forming the layer ML on the wafer WF, a grinding step PC3 for grinding the wafer WF from the other surface side of the wafer WF, an external force is applied to the wafer WF, and the wafer WF is separated As a supporting member for supporting the chip CP via the second adhesive sheet AS2 outside the adhesion scheduled area to which the chip CP is attached in the chip forming step PC4 that forms the chip CP and the chip CP in the second adhesive sheet AS2 A supporting member attaching step PC5 for attaching the ring frame RF; a second sheet attaching step PC6 for attaching the second adhesive sheet AS2 to the other surface of the tip CP; A first sheet peeling process PC7 for peeling the first adhesive sheet AS1 from the chip CP attached to the adhesive sheet AS2, and a distance expansion process PC8 for applying tension to the second adhesive sheet AS2 to widen the distance between the chips CP. carry out.

  As shown in FIG. 1A, the first sheet sticking step PC1 is a process of pressing the first adhesive sheet AS1 in which the first adhesive layer AL1 is laminated on one surface of the first base material BS1 as a pressing means. The roller 11 presses and adheres to one surface of the wafer WF. The first adhesive sheet AS1 is attached to the wafer WF in a state in which the movement of one of the pressing roller 11 and the wafer WF is restricted, the other is moved, or both of them are moved. A predetermined circuit is formed on one surface of wafer WF.

  In the modified layer forming step PC2, as shown in FIG. 1B, a plurality of modified layers ML are formed inside the wafer WF by the laser irradiator 21 as a modified layer forming means. The modified layer ML moves the other of both the laser irradiator 21 and the wafer WF while restricting the movement of one of the laser irradiator 21 and the wafer WF, or moves both of them, as shown in FIG. It forms in the grid | lattice form which becomes parallel respectively to a Y-axis (the modification layer ML parallel to an X-axis is not shown).

  In the grinding process PC3, as shown in FIG. 1C, the thickness of the wafer WF is reduced by grinding from the other surface side of the wafer WF with a grinding means 31 such as a grinder or a cutting member. The grinding of the wafer WF is performed in a state in which the movement of one of the wafer WF and the grinding unit 31 is restricted, the other is moved, or both are moved, or the movement of both is restricted.

  As shown in FIG. 1C, the chip forming process PC4 is performed in the grinding process PC3 with the force for grinding the wafer WF in the grinding process PC3 as an external force. That is, while the semiconductor wafer is ground toward the modified layer ML from the other surface side of the wafer WF by the grinding unit 31, the load of the grinding unit 31 is an external force, and the wafer WF is cracked starting from the modified layer ML. A CC is formed, and the wafer WF is singulated by the crack CC to form a chip CP.

As shown in FIG. 1D, the supporting member attaching step PC5 is a pressing roller as a pressing means, which is a second adhesive sheet AS2 in which the second adhesive layer AL2 is laminated on one surface of the second base material BS2. At 51, one side of the ring frame RF is pressed and attached. The second adhesive sheet AS2 is attached to the ring frame RF by moving one of the pressing roller 51 and the ring frame RF while restricting the movement of the other or moving both of them. At this time, the second adhesive sheet AS2 may be attached to the ring frame RF while being applied with tension, or may be attached to the ring frame RF without being applied with tension, and the second adhesive sheet may be applied with tension. Even if the second adhesive sheet AS2 is applied to the ring frame RF while applied, the tension is dispersed after being applied to the ring frame RF, and the tension is balanced.
The supporting member attaching process PC5 may be performed at any stage before the second sheet adhering process PC6. For example, the supporting member attaching process PC5 may be performed before the first sheet adhering process PC1, or the first sheet It may be carried out between the sticking step PC1 and the modified layer forming step PC2, or it may be carried out between the modified layer forming step PC2 and the grinding step PC3, or the grinding step PC3 and the chip forming step PC4. , And may be performed at the same time as the first sheet sticking process PC1, or may be performed at the same time as the modifying layer formation process PC2, or the same as the grinding process PC3. It may be performed at the same time as the chip formation process PC4.

  In the second sheet sticking step PC6, as shown in FIG. 1E, the second adhesive sheet AS2 to which the ring frame RF is stuck is held by the first holding member 61 as holding means, and the first adhesive sheet AS1 The wafer WF, which has been made into a plurality of chips CP, is held by the second holding member 62 as holding means, and the first holding member 61 and the second holding member 62 are brought close to each other to carry out grinding of the chip CP. The second adhesive sheet AS2 is pressed and attached to the other surface. The second adhesive sheet AS2 is attached to each chip CP by moving the other in a state in which movement of one of the pressing member 61 and each chip CP is restricted, or moving both of them.

  In the first sheet peeling step PC7, as shown in FIG. 1F, the peeling sheet PT as holding means is stuck to the first adhesive sheet AS1 stuck to each chip CP by the peeling roller 71 as peeling means Then, the first adhesive sheet AS1 is peeled from each chip CP by collecting the peeling sheet PT. The first adhesive sheet AS1 is peeled from each chip CP by moving the other in a state in which the movement of one of the peeling sheet PT and each chip CP is restricted, or by moving both of them. At this time, since the second adhesive sheet AS2 is applied to the ring frame RF and tension is dispersed and tension is balanced, the chips CP do not mutually press each other.

  In the space expansion step PC8, as shown in FIG. 1 (G), the contact means 81 in contact with the second adhesive sheet AS2 and the frame holding member 82 as a holding means for holding the ring frame RF are relatively moved, By applying tension to the second adhesive sheet AS2, the mutual spacing between the chips CP is increased. The second adhesive sheet AS2 is tensioned by moving one of the contact means 81 and the frame holding member 82 while restricting the movement of the other and moving both of them.

  According to the embodiment as described above, since the support member attaching process PC5 is performed at the front stage of the second sheet adhering process PC6, the ring is formed on the second adhesive sheet AS2 while applying a predetermined tension to the second adhesive sheet AS2. Even when the frame RF is attached, the second adhesive sheet AS2 is tension-balanced after being applied to the ring frame RF and is in a tension-balanced state. Therefore, even if the transfer is performed through the second sheet sticking process PC6 and the first sheet peeling process PC7, the release of the internal stress by the second adhesive sheet AS2 is not performed, and the chip CP is transferred when the transfer is performed. Can mutually reduce the disadvantages inherent in the SDBG process which promotes the chipping phenomenon as much as possible.

  Here, in the related art, the second adhesive sheet AS2 is simultaneously attached to both the chips CP and the ring frame RF attached to the first adhesive sheet AS1, and the first adhesive sheet AS1 is peeled off and transferred from each chip CP. And the second adhesive sheet AS2 previously attached to the ring frame RF as in the above embodiment, and the second adhesive sheet AS2 is attached to each chip CP, and (1) How much each chip CP transferred to the second adhesive sheet AS2 is moved by the transfer method of the present invention (hereinafter, also simply referred to as "the present invention transfer method") in which the adhesive sheet AS1 is peeled off and transferred. Verification was done.

  First, in the SDBG process, when transferred onto the second adhesive sheet AS2, the chips CP are in contact with each other, so the movement amount of each chip CP can not be measured, as shown in FIG. 2 (A-1), (B-1) As shown in 2.), inspection objects EX1 and EX2 in which a plurality of chips CP were formed on the first adhesive sheet AS1 were prepared by the completely same DBG process. Although the inspection objects EX1 and EX2 which are simplified are shown in FIGS. 2A and 2B, actually, for the wafer WF having a diameter of 300 mm, reaching the rear surface side with a blade having a width of 30 μm from the front surface side. The grooves GV with no gaps are formed at intervals of 10 mm on the left and right and 10 mm on the front and back, and grinding is performed until the grooves GV are reached from the back surface side of the wafer WF. Formed.

Next, the conventional transfer method is applied to the inspection object EX1, and as shown in FIGS. 2 (A-2) and (A-3), the pressing roller 51 is equivalent to the supporting member attaching process PC5. After attaching the second adhesive sheet AS2 simultaneously to both the chip CP and the ring frame RF, the sample SP1 having a plurality of chips CP transferred onto the second adhesive sheet AS2 is subjected to the first sheet peeling step PC7. Created.
On the other hand, the transfer method of the present invention is applied to the inspection object EX2, and as shown in FIGS. 2 (B-2) and (B-3), the supporting member attaching step PC5, the second sheet attaching step PC6 and After the first sheet peeling step PC7, a sample SP2 in which a plurality of chips CP are transferred onto the second adhesive sheet AS2 is produced.
When the second adhesive sheet AS2 is simultaneously attached to both the chip CP and the ring frame RF in the conventional transfer method, the tension applied to the second adhesive sheet AS2 and the ring frame RF in the transfer method of the present invention. When the second adhesive sheet AS2 is attached to the second adhesive sheet AS2, the same tension is applied to the tension applied to the second adhesive sheet AS2.

  And as a result of calculating the average value of the chip | tip space | interval on 2nd adhesive sheet AS2 in sample SP1 and SP2, the average of the chip | tip space | interval in sample SP1 becomes 26.76 micrometers (standard deviation 3.20), The chip | tip in sample SP2 The average of the intervals was 28.25 μm (standard deviation 1.60). That is, while the theoretical chip distance is 30 μm, the sample SP1 moves on average 3.24 μm, and the sample SP2 moves on average 1.75 μm. Therefore, the sample SP2 has an average reduction of 1.49 μm, ie, 46.0%, in comparison with the sample SP1. Further, the degree of dispersion is also halved from the value of the standard deviation. The decrease in the movement amount of each chip CP can not be regarded as a decrease in the force with which the respective chips CP push each other, but since the movement amount is decreasing, the force of the mutual push is surely grasped in the decreasing direction be able to. Therefore, according to the transfer method of the present invention, the disadvantages inherent in the SDBG process in which the chips CP mutually squeeze with each other to promote the chipping phenomenon when transfer is performed are reduced as compared with the conventional transfer method.

  The means and steps in the present invention are not limited in any way as long as the operations, functions or steps described in the means and steps can be performed, and the configuration of only one embodiment described in the above embodiment It is not at all limited to things or processes. For example, if the first sheet sticking step is a step of sticking the first adhesive sheet on one side of the semiconductor wafer, it is limited in light of the technical common sense at the time of filing as long as it is within the technical range. It does not happen (the same applies to the other means and steps).

The method of manufacturing a semiconductor device according to the present invention, as shown in FIG. 1H, is a second stage attached to the ring frame RF at a stage subsequent to the support member attachment process PC5 and at a stage prior to the second sheet sticking process PC6. You may implement tension application process PC9 which applies tension to adhesive sheet AS2.
Such a tension applying step PC9 adopts, as the second adhesive sheet AS2, a material that shrinks due to the application of ultraviolet light as the predetermined first energy, and the ultraviolet light is applied by the light emission source 91 as the first energy applying means. It emits light, and the ultraviolet light is applied to the second adhesive sheet AS2 attached to the ring frame RF. The ultraviolet rays move the other while restricting the movement of one of the light emitting source 91 and the second adhesive sheet AS2 attached to the ring frame RF, or move both of them, or restrict the movement of both of them. Is applied to the second adhesive sheet AS2.

The method of manufacturing a semiconductor device according to the present invention, as shown in FIG. 1I, is a second step attached to the ring frame RF at a stage subsequent to the support member attachment process PC5 and at a stage preceding the second sheet sticking process PC6. You may implement tension relaxation process PC10 which relieves | hangs the tension of adhesive sheet AS2.
Such a tension relaxation process PC10 employs a second adhesive sheet AS2, which is extended by the provision of infrared rays as a predetermined second energy, and emits infrared rays by the light emitting source 101 as a second energy applying means. The infrared ray is applied to the second adhesive sheet AS2 attached to the ring frame RF. A state in which the infrared rays move the other while restricting the movement of one of the light emitting source 101 and the second adhesive sheet AS2 attached to the ring frame RF, or move both of them or the movement of both of them. Is applied to the second adhesive sheet AS2.
The tension relaxation process PC10 may be performed between the support member attachment process PC5 and the tension application process PC9, or may be performed between the tension application process PC9 and the second sheet application process PC6. The tension application step PC9 may be repeated alternately, and the tension applied to the second adhesive sheet AS2 may be a predetermined tension.

  The first sheet sticking process PC1 is a driving device supported by the output shaft of a linear motion motor as a pressing means, and is a holding member capable of being held by suction by a pressure reducing means such as a pressure reducing pump or vacuum ejector. The first adhesive sheet AS1 held by the holding member may be pressed against the wafer WF and attached.

In the modified layer forming step PC2, the modified layer ML may be formed from one side of the wafer WF, or may be formed from the other side of the wafer WF, or the X axis Or one reformed layer ML parallel to the Y axis may be formed, or one or more reforms not parallel to the X axis may be formed. The layer ML may be formed, one or more reformed layers ML not parallel to the Y axis may be formed, or the reformed layers ML may be formed at irregular intervals from one another. A plurality of reformed layers ML which are not parallel to each other or not parallel to each other may be formed, or a plurality of reformed layers ML which do not intersect each other may be formed, or a plurality of reformed layers ML which are orthogonal or oblique to each other It may be formed, and one or more modified layers ML may be formed in a curvilinear shape or a linear shape, and formed by such modified layers ML. The shape of the chip CP that is, circular, oval, polygonal or the like or triangular or quadrangular, may have any shape.
The modified layer forming means changes the characteristics, characteristics, properties, materials, compositions, configurations, dimensions, etc. of the wafer WF by applying laser light, electromagnetic waves, vibrations, heat, chemicals, chemical substances, etc. Are weakened, crushed, liquefied or hollowed, and external force is directly or indirectly applied to the wafer WF to form any modified layer ML as long as the wafer becomes a starting point of singulation. It is also good.

  In the grinding process PC3, the thickness of the wafer WF may be reduced by applying a laser beam, a chemical, a chemical substance or the like.

  The chip forming step PC4 may be performed independently without being performed in the grinding step PC3. For example, an external force is applied to the wafer WF by a vibrating unit such as a vibrator or an eccentric motor, or a tension is applied to the first adhesive sheet AS1. May be formed, or the wafer WF may be curved to form a crack CC starting from the modified layer ML, and the wafer WF may be singulated by the crack CC to form a chip CP, The external force to be applied may be any force such as pressing force, tension, pressure, bending force, vibration and the like.

  The supporting member attaching step PC5 is a driving device supported by the output shaft of the linear motion motor as the pressing means, and the second adhesive sheet AS2 is a holding member which can be held by suction by the pressure reducing means such as a pressure reducing pump or vacuum ejector. The second adhesive sheet AS2 held and held by the holding member may be pressed and attached to the ring frame RF.

  In the second sheet sticking step PC6, the second adhesive sheet AS2 may be pressed by the pressing roller as pressing means, and the second adhesive sheet AS2 may be pressed and stuck to the other surface of the chip CP. And the second adhesive sheet AS2, the second adhesive sheet AS2 may be attached to the other surface of the chip CP in a reduced pressure atmosphere including a vacuum so that air does not intervene between the second adhesive sheet AS2.

  In the first sheet peeling process PC7, a strip-shaped or sheet-like peeling sheet PT may be adopted as a holding means, and is supported by the output shaft of a linear motion motor as a drive device. The first adhesive sheet AS1 is held by a holding member which can be held by suction by the pressure reducing means, and the first adhesive sheet AS1 held by the holding member may be separated from each chip CP and separated. The first adhesive sheet AS1 in which the adhesive strength is lowered by the ultraviolet rays as energy rays is adopted, and the first adhesive sheets are irradiated with the ultraviolet rays by the ultraviolet ray irradiating means for irradiating the first adhesive sheets AS1 with the first adhesive sheet The AS 1 may be peeled off, and such energy rays may be electromagnetic waves such as infrared rays, visible rays, sound waves, X-rays or gamma rays.

  The interval expansion step PC8 may not be performed in the method of manufacturing a semiconductor device of the present invention.

  In the tension applying step PC9, ultraviolet light is partially applied to the second adhesive sheet AS2 by the light emitting source 91, and the light emitting source 91 and the second adhesive sheet AS2 are moved relative to each other to emit ultraviolet light to the entire second adhesive sheet AS2. The ultraviolet light may be applied collectively or collectively to the entire second adhesive sheet AS2, and the time for irradiating the ultraviolet light to the second adhesive sheet AS2 depends on the characteristics, characteristics, and properties of the second adhesive sheet AS2. Material, composition, and configuration, etc., and can be determined arbitrarily as the first predetermined energy, in addition to ultraviolet light, electromagnetic waves such as infrared light, visible light, sound waves, X-rays or gamma rays, hot water and hot air Or the like, and may be arbitrarily determined in consideration of the properties, characteristics, properties, material, composition, configuration, etc. of the second adhesive sheet AS2, and the first energy may be determined as the second adhesive sheet. A focusing means such as a light collecting plate or collecting plate to be concentrated on the light source AS2 may be adopted, or an LED (Light Emitting Diode) lamp, a high pressure mercury lamp, a low pressure mercury lamp, a metal halide lamp as the light source 91 A xenon lamp, a halogen lamp, or the like may be adopted, or a combination of them may be adopted appropriately, or may not be carried out in the method of manufacturing a semiconductor device of the present invention.

  In the tension relaxation process PC10, an infrared ray is partially applied to the second adhesive sheet AS2 by the light emitting source 101, the light emitting source 101 and the second adhesive sheet AS2 are relatively moved, and the infrared light is applied to the entire second adhesive sheet AS2. The infrared ray may be applied collectively to the whole of the second adhesive sheet AS2, or the time for irradiating the infrared ray to the second adhesive sheet AS2 depends on the characteristics, characteristics, and properties of the second adhesive sheet AS2. Material, composition, configuration, etc. can be determined arbitrarily, and as the second predetermined energy, in addition to infrared rays, electromagnetic waves such as ultraviolet rays, visible light, sound waves, X-rays or gamma rays, hot water or hot air And the like, and may be arbitrarily determined in consideration of the properties, characteristics, properties, material, composition, configuration, etc. of the second adhesive sheet AS2, and the second energy may be A concentration means such as a light collecting plate or collecting plate concentrated on the adhesive sheet AS2 may be adopted, or an LED (Light Emitting Diode) lamp, a high pressure mercury lamp, a low pressure mercury lamp, a metal halide as the light source 101 A lamp, a xenon lamp, a halogen lamp or the like may be employed, or any combination thereof may be employed or may not be carried out in the method of manufacturing a semiconductor device of the present invention.

The predetermined circuit may not be formed on one surface of wafer WF.
The support member may be annular or non-annular, or may be circular, oval, polygonal such as triangular or square, or any other shape.

  The materials, types, shapes, etc. of the first and second adhesive sheets AS1 and AS2 and the wafer WF in the present invention are not particularly limited. For example, the first and second adhesive sheets AS1 and AS2 and the wafer WF may have a circular shape, an elliptical shape, a polygonal shape such as a triangle or a quadrangle, or any other shape, such as pressure sensitive adhesive, heat sensitive adhesive, etc. An adhesive form may be used, and when the heat-sensitive adhesive first and second adhesive sheets AS1 and AS2 are adopted, an appropriate coil heater for heating the first and second adhesive sheets AS1 and AS2 or It may be adhered by an appropriate method such as providing heating means such as the heating side of the heat pipe. In addition, such first and second adhesive sheets AS1 and AS2 are, for example, a single layer of an adhesive layer only, an intermediate layer between the substrate and the adhesive layer, and the upper surface of the substrate It may be a so-called double-sided adhesive sheet capable of peeling a substrate from an adhesive layer, such as having three or more layers having a cover layer, and the double-sided adhesive sheet may be a single layer or a multilayer Or a single layer or multiple layers without an intermediate layer. The semiconductor wafer may be, for example, a silicon semiconductor wafer or a compound semiconductor wafer. The first and second adhesive sheets AS1 and AS2 can be changed to functional and practical reading, for example, information description labels, decorative labels, protective sheets, protective sheets, dicing tapes, die attach films, die bonding tapes, recordings Any sheet such as a layer-forming resin sheet, a film, a tape, etc. may be used.

The drive device in the above embodiment includes a rotary motor, a linear motion motor, a linear motor, a single-axis robot, an electric machine such as an articulated robot having joints of two or three or more axes, an air cylinder, a hydraulic cylinder, a rodless Not only actuators such as cylinders and rotary cylinders can be employed, but also combinations of them directly or indirectly can be employed.
In the embodiment, in the case where a rotating member such as a roller is employed, a drive device may be provided to rotate the rotating member, or the surface of the rotating member or the rotating member itself may be deformed by rubber or resin. It may be constituted by a member, or the surface of the rotating member or the rotating member itself may be constituted by a member which does not deform, or one which presses an object to be pressed such as pressing means or pressing member such as pressing roller or pressing head. When employed, instead of or in combination with those exemplified above, a member such as a roller, a round bar, a blade, rubber, resin, sponge or the like is adopted, or pressure is applied by spraying a gas such as the atmosphere or gas. May be adopted, or those to be pressed may be constituted by a deformable member such as rubber or resin, or may be constituted by a member which is not deformed, a peeling plate, a peeling roller, etc. Means of peeling off When a member that peels off a material to be peeled off is employed, a member such as a plate-like member, a round bar, a roller or the like may be employed instead of or in combination with the members exemplified above. It may be composed of a deformable member such as rubber or resin, or may be composed of a non-deformable member, or support or hold a supported member such as a supporting (holding) means or a supporting (holding) member. If something is adopted, holding means such as mechanical chuck or chuck cylinder, Coulomb force, adhesive (adhesive sheet, adhesive tape), adhesive (adhesive sheet, adhesive tape), magnetic force, Bernoulli adsorption, suction adsorption, You may employ | adopt the structure which supports (supports) a to-be-supported member by drive apparatus etc. FIG.

AS1 first adhesive sheet AS2 second adhesive sheet CP semiconductor chip ML modified layer PC1 first sheet attaching step PC2 modified layer forming step PC3 grinding step PC4 tip forming step PC5 supporting member attaching step PC6 second sheet sticking process PC7 first sheet peeling process PC8 interval expansion process PC9 tension application process PC10 tension relaxation process RF ring frame (support member)
WF: Semiconductor wafer

Claims (5)

A first sheet sticking step of sticking a first adhesive sheet on one side of the semiconductor wafer;
A modified layer forming step of forming on the semiconductor wafer a modified layer which becomes a starting point for dividing the semiconductor wafer by application of an external force;
A grinding step of grinding the semiconductor wafer from the other surface side of the semiconductor wafer;
A chip forming step of applying an external force to the semiconductor wafer and singulating the semiconductor wafer to form a semiconductor chip;
A second sheet attaching step of attaching a second adhesive sheet to the other surface of the semiconductor chip;
And a first sheet peeling step of peeling the first adhesive sheet from the semiconductor chip attached to the second adhesive sheet,
A support member for attaching a support member for supporting the semiconductor chip via the second adhesive sheet to the outside of the planned adhesion area of the second adhesive sheet to which the semiconductor chip is to be attached in a stage prior to the second sheet application process. A method of manufacturing a semiconductor device comprising performing an attaching process.   The method for manufacturing a semiconductor device according to claim 1, wherein the chip forming step is performed in the grinding step by using a force for grinding the semiconductor wafer in the grinding step as an external force.   The second adhesive sheet according to claim 1 or 2, wherein a tension is applied to the second adhesive sheet in a stage subsequent to the first sheet peeling step to widen the distance between the semiconductor chips. Semiconductor device manufacturing method.   A step of applying a tension to the second adhesive sheet attached to the support member is performed at a stage subsequent to the step of attaching the support member and before the step of attaching the second sheet. A method of manufacturing a semiconductor device according to any one of claims 1 to 3.   The second aspect of the present invention is characterized in that a tension relaxation process for relaxing the tension of the second adhesive sheet attached to the support member is performed at a stage subsequent to the support member attachment process and before the second sheet application process. A method of manufacturing a semiconductor device according to any one of claims 1 to 4.