JP2019076939A - ろう材、接合構造および半導体パッケージ - Google Patents
ろう材、接合構造および半導体パッケージ Download PDFInfo
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- JP2019076939A JP2019076939A JP2017206947A JP2017206947A JP2019076939A JP 2019076939 A JP2019076939 A JP 2019076939A JP 2017206947 A JP2017206947 A JP 2017206947A JP 2017206947 A JP2017206947 A JP 2017206947A JP 2019076939 A JP2019076939 A JP 2019076939A
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- Japan
- Prior art keywords
- metal
- copper
- silver
- brazing material
- metal portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000463 material Substances 0.000 title claims abstract description 115
- 238000005219 brazing Methods 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title description 36
- -1 junction structure Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 135
- 239000002184 metal Substances 0.000 claims abstract description 135
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000010949 copper Substances 0.000 claims abstract description 51
- 229910052802 copper Inorganic materials 0.000 claims abstract description 50
- 239000004332 silver Substances 0.000 claims abstract description 46
- 229910052709 silver Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 40
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052718 tin Inorganic materials 0.000 claims abstract description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 54
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 46
- 229910052759 nickel Inorganic materials 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000011133 lead Substances 0.000 description 35
- 239000011135 tin Substances 0.000 description 31
- 238000002844 melting Methods 0.000 description 20
- 230000008018 melting Effects 0.000 description 20
- 229910000990 Ni alloy Inorganic materials 0.000 description 12
- 238000005304 joining Methods 0.000 description 11
- 239000007769 metal material Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000010953 base metal Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000000921 elemental analysis Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
ら、信頼性および耐熱性の向上が容易な半導体パッケージを提供することができる。
電子部品は、複数個でもよく、アンテナ素子、容量素子または抵抗器等の他の電子部品(いわゆる受動部品を含む)をさらに含んでいてもよい。
みは、例えば1〜5mmである。また、第1枠体3の高さは、1〜10mmである。
が挙げられる。
性)等の条件に応じて適宜設定することができる。
2 金属基板
2a 実装領域
3 枠体
4 リード端子
11 第1金属部
12 第2金属部
21 ろう材
21A 接合材
22 第1部材
23 第2部材
24 本体
24a 銀相
24b 銅相
25 分散相
25a スズ(成分)
26 ニッケル層
27 ニッケル合金層
S 接合構造
Claims (7)
- 銀および銅を主成分として含有しており、表面および該表面で囲まれた本体部分を有する第1部材と、
スズを主成分として含有しており、前記第1部材の前記表面に沿って位置する層状の第2部材とを備えるろう材。 - 第1金属部および該第1金属部に対向する第2金属部を含む被接合材と、
銀および銅を主成分として含有する本体と、スズを主成分として含有しており、前記本体中に分散している分散相とを含んでおり、前記第1金属部と前記第2金属部との間に位置して前記第1金属部および前記第2金属部に接合している接合材とを備える接合構造。 - 前記本体に含有されている銀および銅は、互いに異なる銀相および銅相として分離し合っている請求項2記載の接合構造。
- 前記本体において、前記銅相および銀相の一方が前記銅相および銀相の他方中に分散している柱状結晶を含んでいる請求項3記載の接合構造。
- 前記分散相が前記本体の全体に均一に分散している請求項2〜請求項4のいずれか1項記載の接合構造。
- 前記被接合材と前記接合材との界面に沿って、スズおよびニッケルの合金層が存在している請求項2〜請求項5のいずれか1項記載の接合構造。
- 請求項2〜請求項6のいずれか1項記載の接合構造と、
前記第1金属部を含む基体と、
前記第2金属部を含む金属部材とを備える半導体パッケージ。
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JP2017206947A JP2019076939A (ja) | 2017-10-26 | 2017-10-26 | ろう材、接合構造および半導体パッケージ |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55126396A (en) * | 1979-03-24 | 1980-09-30 | Tokuriki Honten Co Ltd | Brazing material |
JPS55138486U (ja) * | 1979-03-24 | 1980-10-02 | ||
JPS55158895A (en) * | 1979-05-31 | 1980-12-10 | Tanaka Kikinzoku Kogyo Kk | Silver solder alloy |
JPS63212087A (ja) * | 1987-02-27 | 1988-09-05 | Taiyo Yuden Co Ltd | 電気部品用ろう材 |
JP2004342879A (ja) * | 2003-05-16 | 2004-12-02 | Central Res Inst Of Electric Power Ind | 熱電変換モジュールの組立方法および当該モジュールの組立てに用いられるろう材 |
JP2007222939A (ja) * | 2006-01-30 | 2007-09-06 | Hitachi Metals Ltd | ロウ材シートおよびその製造方法ならびに電子部品用パッケージ |
JP2008080392A (ja) * | 2006-09-29 | 2008-04-10 | Toshiba Corp | 接合体および接合方法 |
JP2012035291A (ja) * | 2010-08-05 | 2012-02-23 | Denso Corp | 半導体装置接合材 |
JP2015174097A (ja) * | 2014-03-13 | 2015-10-05 | 田中貴金属工業株式会社 | 活性金属ろう材層を備える複合材料 |
-
2017
- 2017-10-26 JP JP2017206947A patent/JP2019076939A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55126396A (en) * | 1979-03-24 | 1980-09-30 | Tokuriki Honten Co Ltd | Brazing material |
JPS55138486U (ja) * | 1979-03-24 | 1980-10-02 | ||
JPS55158895A (en) * | 1979-05-31 | 1980-12-10 | Tanaka Kikinzoku Kogyo Kk | Silver solder alloy |
JPS63212087A (ja) * | 1987-02-27 | 1988-09-05 | Taiyo Yuden Co Ltd | 電気部品用ろう材 |
JP2004342879A (ja) * | 2003-05-16 | 2004-12-02 | Central Res Inst Of Electric Power Ind | 熱電変換モジュールの組立方法および当該モジュールの組立てに用いられるろう材 |
JP2007222939A (ja) * | 2006-01-30 | 2007-09-06 | Hitachi Metals Ltd | ロウ材シートおよびその製造方法ならびに電子部品用パッケージ |
JP2008080392A (ja) * | 2006-09-29 | 2008-04-10 | Toshiba Corp | 接合体および接合方法 |
JP2012035291A (ja) * | 2010-08-05 | 2012-02-23 | Denso Corp | 半導体装置接合材 |
JP2015174097A (ja) * | 2014-03-13 | 2015-10-05 | 田中貴金属工業株式会社 | 活性金属ろう材層を備える複合材料 |
Non-Patent Citations (1)
Title |
---|
東 泰助 ほか5名: "Ag-Cu-Sn合金の低温ろう付け特性と機械的性質", 粉体および粉末冶金, vol. 第56巻第11号, JPN6021043386, 2009, pages 661 - 667, ISSN: 0004759458 * |
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