JP2019061848A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP2019061848A JP2019061848A JP2017185071A JP2017185071A JP2019061848A JP 2019061848 A JP2019061848 A JP 2019061848A JP 2017185071 A JP2017185071 A JP 2017185071A JP 2017185071 A JP2017185071 A JP 2017185071A JP 2019061848 A JP2019061848 A JP 2019061848A
- Authority
- JP
- Japan
- Prior art keywords
- space
- upper electrode
- plasma processing
- central axis
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 65
- 239000004020 conductor Substances 0.000 claims abstract description 112
- 238000009826 distribution Methods 0.000 claims abstract description 55
- 239000003507 refrigerant Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 69
- 238000000034 method Methods 0.000 description 50
- 230000008569 process Effects 0.000 description 32
- 230000005684 electric field Effects 0.000 description 23
- 150000002500 ions Chemical class 0.000 description 14
- 230000004907 flux Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000009827 uniform distribution Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/152—Magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
<計算の条件>
コイル64の内径(半径):132mm
コイル64の外径(半径):173mm
コイル64の巻数:215ターン
コイル64に供給した電流:4[A]
電磁石60の下端とステージ14上に載置された被加工物Wとの間の距離:174mm
<実験の条件>
内部空間12sの圧力:20mTorr(2.67Pa)
内部空間12sに供給したガス:1000sccmのArガス
第1の高周波:60MHz、100W
第2の高周波:40MHz、100W
Claims (10)
- チャンバ本体と、
前記チャンバ本体によって提供された内部空間にガスを供給するように構成されたガス供給部と、
下部電極を含み、被加工物の載置領域を提供し、前記内部空間の中に設けられたステージであり、前記載置領域の中心は前記チャンバ本体の中心軸線上に位置する、該ステージと、
前記内部空間を介して前記ステージの上方に設けられた上部電極と、
前記上部電極に接続されており、該上部電極から上方に延びる給電導体と、
第1の高周波を発生するように構成されており、前記給電導体を介して前記上部電極に電気的に接続された第1の高周波電源と、
前記第1の高周波の周波数よりも低い周波数を有する第2の高周波を発生するように構成されており、前記下部電極に電気的に接続された第2の高周波電源と、
前記上部電極の上方に配置された電磁石であり、前記中心軸線上での水平成分よりも大きい水平成分を、該中心軸線から離れた位置で有する磁場の分布を前記内部空間の中に形成するように構成された、該電磁石と、
接地されており、前記チャンバ本体の上方で前記上部電極を覆うように延びる接地導体と、
を備え、
前記接地導体は、
前記チャンバ本体から上方に延びる筒状の第1の部分と、
前記上部電極から上方に離間し、且つ、前記第1の部分から前記中心軸線に向けて延びる第2の部分であり、前記第1の部分と共に、前記上部電極上に第1の空間を提供する、該第2の部分と、
前記第1の部分よりも前記中心軸線の近くに設けられており、前記第2の部分から上方に延びる筒状の第3の部分であり、その中に前記第1の空間に連続する第2の空間を提供する、該第3の部分と、
を有し、
前記給電導体は、前記第1の空間及び前記第2の空間を通って上方に延びており、
前記電磁石は、前記第3の部分の外側、前記第2の部分上、且つ、前記内部空間の上方に前記接地導体によって提供された外部空間の中に配置されている、
プラズマ処理装置。 - 前記接地導体は、
前記第2の部分の上方で、前記中心軸線に対して放射方向に前記第3の部分から延びる第4の部分と、
前記3の部分よりも前記中心軸線から離れており、前記第4の部分から上方に延びる筒状の第5の部分と、
前記第4の部分の上方で、前記第5の部分から前記中心軸線に向けて延びる第6の部分と、
を更に有し、
前記給電導体は、更に、前記第4の部分、前記第5の部分、及び、前記第6の部分によって囲まれた、前記第2の空間に連続する第3の空間を通って、上方に延びている、
請求項1に記載のプラズマ処理装置。 - 前記上部電極から前記第1の空間及び前記第2の空間を通って上方に延び、前記第3の空間を通って、前記接地導体に対して側方且つ外側まで延びる第1の管であり、前記上部電極に冷媒を供給する、該第1の管を更に備える、
請求項2に記載のプラズマ処理装置。 - 前記上部電極は、前記ガス供給部からのガスを前記内部空間に吐出するシャワーヘッドを構成しており、
該プラズマ処理装置は、前記上部電極から前記第1の空間及び前記第2の空間を通って上方に延び、前記第3の空間を通って、前記接地導体に対して側方且つ外側まで延びる第2の管であり、前記シャワーヘッドに前記ガス供給部からのガスを供給する、該第2の管を更に備える、
請求項2又は3に記載のプラズマ処理装置。 - 前記上部電極に印加される負極性の直流電圧を発生する直流電源と、
前記直流電源と前記上部電極とを互いに接続する配線と、
を更に備え、
前記配線は、前記上部電極から前記第1の空間及び前記第2の空間を通って上方に延び、前記第3の空間を通って、前記接地導体に対して側方且つ外側まで延びている、
請求項2〜4の何れか一項に記載のプラズマ処理装置。 - 前記電磁石は、前記中心軸線の周りで巻かれたコイルを有する、請求項1〜5の何れか一項に記載のプラズマ処理装置。
- 前記コイルの内径と外径との平均値は、前記中心軸線と前記被加工物のエッジとの間の距離以上である、請求項6に記載のプラズマ処理装置。
- 前記第2の高周波の前記周波数は、13.56MHzよりも大きい、請求項1〜7の何れか一項に記載のプラズマ処理装置。
- 前記第2の高周波の前記周波数は、40MHz以上である、請求項8に記載のプラズマ処理装置。
- 前記第2の高周波の前記周波数は、60MHz以上である、請求項8に記載のプラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017185071A JP6836976B2 (ja) | 2017-09-26 | 2017-09-26 | プラズマ処理装置 |
TW107132402A TWI791615B (zh) | 2017-09-26 | 2018-09-14 | 電漿處理裝置 |
KR1020180114041A KR102591952B1 (ko) | 2017-09-26 | 2018-09-21 | 플라즈마 처리 장치 |
US16/140,948 US10763087B2 (en) | 2017-09-26 | 2018-09-25 | Plasma processing apparatus |
CN201811125428.3A CN109559968B (zh) | 2017-09-26 | 2018-09-26 | 等离子体处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017185071A JP6836976B2 (ja) | 2017-09-26 | 2017-09-26 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019061848A true JP2019061848A (ja) | 2019-04-18 |
JP2019061848A5 JP2019061848A5 (ja) | 2020-08-20 |
JP6836976B2 JP6836976B2 (ja) | 2021-03-03 |
Family
ID=65808336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017185071A Active JP6836976B2 (ja) | 2017-09-26 | 2017-09-26 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10763087B2 (ja) |
JP (1) | JP6836976B2 (ja) |
KR (1) | KR102591952B1 (ja) |
CN (1) | CN109559968B (ja) |
TW (1) | TWI791615B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020039943A1 (ja) * | 2018-08-21 | 2020-02-27 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
WO2020121588A1 (ja) * | 2019-07-29 | 2020-06-18 | 株式会社日立ハイテク | プラズマ処理装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102139615B1 (ko) * | 2018-07-10 | 2020-08-12 | 세메스 주식회사 | 기판 처리 장치 |
JP7078793B2 (ja) * | 2020-04-21 | 2022-05-31 | 株式会社日立ハイテク | プラズマ処理装置 |
JP7450475B2 (ja) * | 2020-06-30 | 2024-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125665A (ja) * | 1997-11-04 | 1998-05-15 | Tadahiro Omi | プラズマプロセス用装置 |
JP2001244248A (ja) * | 2000-02-28 | 2001-09-07 | Hitachi Ltd | プラズマ処理装置および方法 |
JP2002093784A (ja) * | 2000-09-13 | 2002-03-29 | Hitachi Ltd | プラズマ処理装置および半導体装置の製造方法 |
JP2003068716A (ja) * | 2001-08-28 | 2003-03-07 | Hitachi Ltd | プラズマ処理装置および処理方法 |
JP2005079416A (ja) * | 2003-09-02 | 2005-03-24 | Hitachi Ltd | プラズマ処理装置 |
JP2006506521A (ja) * | 2002-11-14 | 2006-02-23 | ゾンド, インコーポレイテッド | 高蒸着速度スパッタリング |
JP2006270017A (ja) * | 2004-06-21 | 2006-10-05 | Tokyo Electron Ltd | プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体 |
JP2010287639A (ja) * | 2009-06-10 | 2010-12-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2013182996A (ja) * | 2012-03-01 | 2013-09-12 | Hitachi High-Technologies Corp | ドライエッチング装置及びドライエッチング方法 |
US20130292057A1 (en) * | 2012-04-26 | 2013-11-07 | Applied Materials, Inc. | Capacitively coupled plasma source with rf coupled grounded electrode |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
JP3854909B2 (ja) * | 2002-08-06 | 2006-12-06 | 株式会社日立製作所 | プラズマ処理装置 |
JP4584565B2 (ja) * | 2002-11-26 | 2010-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US7740737B2 (en) | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
EP2479783B1 (en) * | 2004-06-21 | 2018-12-12 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN101494151B (zh) * | 2009-03-05 | 2013-11-13 | 苏州晶能科技有限公司 | 高效率的一维线性等离子体清洗磁控阴极装置 |
KR101841236B1 (ko) * | 2009-04-03 | 2018-03-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 rf-dc 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법 |
KR101039232B1 (ko) * | 2010-04-27 | 2011-06-13 | 김정태 | 고밀도 플라즈마 발생장치 |
JP2012216632A (ja) * | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | プラズマ処理方法、及び素子分離方法 |
JP2014209406A (ja) * | 2011-07-20 | 2014-11-06 | キヤノンアネルバ株式会社 | イオンビーム発生装置、およびイオンビームプラズマ処理装置 |
CN106548918A (zh) * | 2016-10-25 | 2017-03-29 | 华中科技大学 | 一种射频和直流混合驱动的磁化容性耦合等离子体源 |
-
2017
- 2017-09-26 JP JP2017185071A patent/JP6836976B2/ja active Active
-
2018
- 2018-09-14 TW TW107132402A patent/TWI791615B/zh active
- 2018-09-21 KR KR1020180114041A patent/KR102591952B1/ko active IP Right Grant
- 2018-09-25 US US16/140,948 patent/US10763087B2/en active Active
- 2018-09-26 CN CN201811125428.3A patent/CN109559968B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125665A (ja) * | 1997-11-04 | 1998-05-15 | Tadahiro Omi | プラズマプロセス用装置 |
JP2001244248A (ja) * | 2000-02-28 | 2001-09-07 | Hitachi Ltd | プラズマ処理装置および方法 |
JP2002093784A (ja) * | 2000-09-13 | 2002-03-29 | Hitachi Ltd | プラズマ処理装置および半導体装置の製造方法 |
JP2003068716A (ja) * | 2001-08-28 | 2003-03-07 | Hitachi Ltd | プラズマ処理装置および処理方法 |
JP2006506521A (ja) * | 2002-11-14 | 2006-02-23 | ゾンド, インコーポレイテッド | 高蒸着速度スパッタリング |
JP2005079416A (ja) * | 2003-09-02 | 2005-03-24 | Hitachi Ltd | プラズマ処理装置 |
JP2006270017A (ja) * | 2004-06-21 | 2006-10-05 | Tokyo Electron Ltd | プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体 |
JP2010287639A (ja) * | 2009-06-10 | 2010-12-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2013182996A (ja) * | 2012-03-01 | 2013-09-12 | Hitachi High-Technologies Corp | ドライエッチング装置及びドライエッチング方法 |
US20130292057A1 (en) * | 2012-04-26 | 2013-11-07 | Applied Materials, Inc. | Capacitively coupled plasma source with rf coupled grounded electrode |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020039943A1 (ja) * | 2018-08-21 | 2020-02-27 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
WO2020121588A1 (ja) * | 2019-07-29 | 2020-06-18 | 株式会社日立ハイテク | プラズマ処理装置 |
JPWO2020121588A1 (ja) * | 2019-07-29 | 2021-02-15 | 株式会社日立ハイテク | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201921421A (zh) | 2019-06-01 |
US10763087B2 (en) | 2020-09-01 |
TWI791615B (zh) | 2023-02-11 |
US20190096639A1 (en) | 2019-03-28 |
JP6836976B2 (ja) | 2021-03-03 |
CN109559968B (zh) | 2021-04-13 |
KR20190035577A (ko) | 2019-04-03 |
CN109559968A (zh) | 2019-04-02 |
KR102591952B1 (ko) | 2023-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6937644B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP6836976B2 (ja) | プラズマ処理装置 | |
TWI811432B (zh) | 蝕刻方法及電漿處理裝置 | |
JP6877316B2 (ja) | エッチング方法 | |
CN111105973B (zh) | 清洗方法及等离子体处理装置 | |
JP7198609B2 (ja) | エッチング方法及びプラズマ処理装置 | |
JP2021150510A (ja) | エッチング方法及びプラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200707 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200707 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20200707 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20200707 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201013 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210112 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6836976 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |