JP2019050425A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2019050425A
JP2019050425A JP2018234080A JP2018234080A JP2019050425A JP 2019050425 A JP2019050425 A JP 2019050425A JP 2018234080 A JP2018234080 A JP 2018234080A JP 2018234080 A JP2018234080 A JP 2018234080A JP 2019050425 A JP2019050425 A JP 2019050425A
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light emitting
light
resin member
emitting element
resin
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JP6729672B2 (en
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宏明 宇川
Hiroaki Ukawa
宏明 宇川
勇介 林
Yusuke Hayashi
勇介 林
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Abstract

To prevent wire disconnection in a light-emitting device.SOLUTION: A light-emitting device comprises: a substrate 10 which has a conductive member containing silver; a light-emitting element 1 which is arranged on the substrate 10; a wire 30 which electrically connects the light-emitting element 1 to the conductive member; a protective film 32, for covering the conductive member, which is spaced away from at least a portion of a connection part between the wire 30 and the conductive member; a first resin member 41 which continuously covers at least portions of the protective film 32, the conductive member located around the connection part 22, and the wire 30; and a shading part which is provided on at least a portion of a surface of the substrate 10. The first resin member 41 includes a first light-reflecting member on which light emitted from the light-emitting element 1 is reflected. The shading part 19C is located on a straight line connecting between the light-emitting element 1 and the first resin member 41.SELECTED DRAWING: Figure 9

Description

本発明は、発光装置に関する。   The present invention relates to a light emitting device.

近年、一般照明用の灯具等において、従来の白熱電球に代わって、より低消費電力の発光ダイオード(Light Emitting Diode:以下「LED」ともいう。)の利用が進んでおり、その応用分野もバックライト用途や照明、車載用途等、各分野に拡大している。特に窒化物系半導体を用いたLEDは、バンドギャップが広く短波長の出射が可能で、近年利用が進んでいる。このような発光装置においては、発光素子を樹脂で封止する構成が採用されている。   In recent years, the use of light-emitting diodes (Light Emitting Diode: hereinafter also referred to as "LEDs") of lower power consumption has been promoted in place of conventional incandescent lamps in general lighting lamps and the like, and the application field is also back It is expanding in various fields such as lighting applications, lighting, and automotive applications. In particular, LEDs using nitride-based semiconductors have wide band gaps and can emit short wavelengths, and their use has been advanced in recent years. In such a light emitting device, a configuration in which a light emitting element is sealed with a resin is employed.

また発光装置の電極部材には、銀等の金属部材が用いられているところ、樹脂がガスを透過するため、使用するにつれて金属部材が硫化されて劣化し、LEDを導電部材と接続するワイヤの接続部分が断線するおそれがある。このため、スパッタリングにより無機材料からなる保護膜を形成してワイヤの接続部分の劣化等を抑制する試みがなされている(例えば特許文献1)。   In addition, metal members such as silver are used for the electrode members of the light emitting device, but since resin transmits gas, the metal members are sulfurized and deteriorated as they are used, and the wire connecting the LED to the conductive member There is a risk of disconnection at the connection part. For this reason, attempts have been made to form a protective film made of an inorganic material by sputtering to suppress deterioration or the like of the connection portion of the wire (for example, Patent Document 1).

しかしながら、スパッタリングによる保護膜の形成方法では、材料成分がある程度の直進性をもって目的物に当たることで保護膜が形成されるので、例えばワイヤと導電部材の接続部分において、部分的に影になる領域が存在すると、保護膜で被覆されない領域が生じる。例えば図11Aの断面図や図11Bの拡大断面図に示すように、ワイヤ30Xの先端にボール24Xを形成したボールボンディングで接続する場合、図11Bの拡大断面図において斜線で示すような、ボール24Xの影になる部分には保護膜32Xが成膜できずに、この部分が保護膜32Xで被覆されない結果、ワイヤ30Xと導電部材20Xが接合される部分の周囲が硫化し、ワイヤ断線するおそれがある。   However, in the method of forming the protective film by sputtering, the protective film is formed by the material component striking the object with a certain degree of rectilinearity, so for example, a partially shaded area in the connection portion between the wire and the conductive member If present, an area not covered with a protective film will result. For example, as shown in the cross-sectional view of FIG. 11A and the enlarged cross-sectional view of FIG. 11B, when connecting by ball bonding in which the ball 24X is formed at the tip of the wire 30X, the ball 24X as shown by hatching in the enlarged cross-sectional view of FIG. As a result that the protective film 32X can not be formed on the shaded part and this part is not covered with the protective film 32X, the periphery of the part where the wire 30X and the conductive member 20X are joined may be sulfurized and the wire may be broken. is there.

特開2009−224538号公報JP, 2009-224538, A

本発明は、従来のこのような課題に鑑みてなされたものであり、その目的の一つは、ワイヤ断線を抑制した発光装置を提供することにある。   The present invention has been made in view of the conventional problems as described above, and one of the objects thereof is to provide a light emitting device in which wire breakage is suppressed.

以上の目的を達成するために、本発明の一実施形態に係る発光装置によれば、銀を含む導電部材を有する基体と、前記基体に配置される発光素子と、前記発光素子と前記導電部材とを電気的に接続するワイヤと、前記ワイヤと前記導電部材との接続部分の少なくとも一部から離間して、前記導電部材を被覆する保護膜と、前記保護膜と前記接続部分の周囲に位置する前記導電部材と前記ワイヤのそれぞれの少なくとも一部を連続して被覆する第一樹脂部材と、前記発光素子及び前記第一樹脂部材を被覆する第二樹脂部材と、前記基体の表面の少なくとも一部に設けた遮光部とを備え、前記第一樹脂部材は、前記発光素子が発する光を反射させる第一光反射部材を含有し、前記発光素子と前記第一樹脂部材とを結ぶ直線上に前記遮光部を位置させている。   In order to achieve the above object, according to a light emitting device according to one embodiment of the present invention, a base having a conductive member containing silver, a light emitting element disposed on the base, the light emitting element and the conductive member And a wire electrically connecting the wire, a protective film covering the conductive member at a distance from at least a part of the connection portion between the wire and the conductive member, and a location around the protective film and the connection portion At least one of a surface of the substrate, a first resin member continuously covering at least a part of each of the conductive member and the wire, a second resin member covering the light emitting element and the first resin member, and And the first resin member contains a first light reflecting member for reflecting the light emitted from the light emitting element, and a straight line connecting the light emitting element and the first resin member Position the light shield To have.

一実施形態に係る発光装置によれば、発光素子から発される光が、ワイヤと導電部材との接続部分の周囲に位置する第一樹脂部材に直接照射されにくいため、発光素子からの一次光で第一樹脂部材が劣化されにくくなり、第一樹脂部材の高いガスバリア性によりワイヤと導電部材との接続部分の周囲に位置する導電部材が硫化することを抑制でき、ワイヤと導電部材の断線を防止することができる。   According to the light emitting device according to one embodiment, it is difficult for the light emitted from the light emitting element to be directly irradiated to the first resin member located around the connection portion between the wire and the conductive member, so that the primary light from the light emitting element The first resin member is less likely to be degraded, and the high gas barrier property of the first resin member can suppress the sulfurization of the conductive member located around the connection portion between the wire and the conductive member, thereby breaking the wire and the conductive member. It can be prevented.

本発明の実施形態1に係る発光装置を示す斜視図である。It is a perspective view which shows the light-emitting device based on Embodiment 1 of this invention. 図1の発光装置の平面図である。It is a top view of the light-emitting device of FIG. 図2のIII−III線における断面図である。It is sectional drawing in the III-III line of FIG. 図3の接続部分を第一樹脂部材で被膜した部分の拡大断面図である。It is an expanded sectional view of the portion which covered the connecting portion of Drawing 3 with the 1st resin member. 変形例に係る発光装置を示す断面図である。It is sectional drawing which shows the light-emitting device which concerns on a modification. 他の変形例に係る発光装置を示す断面図である。It is sectional drawing which shows the light-emitting device which concerns on another modification. 実施形態2に係る発光装置を示す断面図である。5 is a cross-sectional view showing a light emitting device according to Embodiment 2. FIG. 実施形態2に係る発光装置を示す平面図である。5 is a plan view showing a light emitting device according to Embodiment 2. FIG. 実施形態3に係る発光装置を示す断面図である。FIG. 7 is a cross-sectional view showing a light emitting device according to Embodiment 3. 実施形態3に係る発光装置を示す平面図である。FIG. 7 is a plan view showing a light emitting device according to a third embodiment. 図11Aはスパッタリングにより保護膜を形成する様子を示す断面図、図11Bは図11Aの拡大断面図である。FIG. 11A is a cross-sectional view showing formation of a protective film by sputtering, and FIG. 11B is an enlarged cross-sectional view of FIG. 11A. 変形例に係る発光装置の接続部分を第一樹脂部材で被膜した部分の拡大断面図である。It is an expanded sectional view of the portion which covered the connecting portion of the light-emitting device concerning a modification with the first resin member.

以下、本発明の実施形態を図面に基づいて説明する。ただし、以下に示す実施形態は、本発明の技術思想を具体化するための例示であって、本発明は以下のものに特定されない。また、本明細書は特許請求の範囲に示される部材を、実施形態の部材に特定するものでは決してない。特に実施形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は特に特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではない。なお、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細説明を適宜省略する。さらに、本発明を構成する各要素は、複数の要素を同一の部材で構成して一の部材で複数の要素を兼用する態様としてもよいし、逆に一の部材の機能を複数の部材で分担して実現することもできる。また、一部の実施例、実施形態において説明された内容は、他の実施例、実施形態等に利用可能なものもある。
(実施形態1)
Hereinafter, embodiments of the present invention will be described based on the drawings. However, the embodiments shown below are exemplifications for embodying the technical idea of the present invention, and the present invention is not limited to the following. Further, the present specification does not in any way specify the members described in the claims to the members of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention thereto only, as long as there is no particular description. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for the sake of clarity. Further, in the following description, the same names and reference numerals indicate the same or the same members, and the detailed description will be appropriately omitted. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and one member is used in common as a plurality of elements, or conversely, the function of one member is realized by a plurality of members It can be shared and realized. In addition, the contents described in some examples and embodiments may be applicable to other examples and embodiments.
(Embodiment 1)

本発明の実施形態1に係る発光装置を図1〜図4に示す。これらの図において、図1は本発明の実施形態1に係る発光装置100を示す斜視図、図2は図1の発光装置100の平面図、図3は図2のIII−III線における断面図(保護素子のワイヤの図示は省略している)を、図4は図3の接続部分22を第一樹脂部材41で被膜した部分の拡大断面図を、それぞれ示している。これらの図に示す発光装置100は、基体10と、基体10に実装された発光素子1とを備える。基体10は、図3の断面図に示すように、一面(図において正面)に凹部14を形成している。尚、凹部14は、側壁部15と底部16で構成されている。凹部14の底部16に、発光素子1が配置される。
(基体10)
The light emitting device according to the first embodiment of the present invention is shown in FIGS. In these figures, FIG. 1 is a perspective view showing a light emitting device 100 according to Embodiment 1 of the present invention, FIG. 2 is a plan view of the light emitting device 100 of FIG. 1, and FIG. 3 is a cross sectional view along line III-III of FIG. FIG. 4 shows an enlarged cross-sectional view of a portion where the connecting portion 22 of FIG. 3 is coated with the first resin member 41 (the illustration of the wires of the protective element is omitted). A light emitting device 100 shown in these figures includes a base 10 and a light emitting element 1 mounted on the base 10. As shown in the cross-sectional view of FIG. 3, the base 10 has a recess 14 formed on one side (front side in the drawing). The recess 14 is constituted by the side wall portion 15 and the bottom portion 16. The light emitting element 1 is disposed at the bottom 16 of the recess 14.
(Substrate 10)

基体10は、銀を含む導電部材と、絶縁性の母材と、を備える。導電部材には、リード及び配線を構成する銀を含む金属部材が挙げられる。導電部材がリードの場合には、例えば、銀、銅、アルミニウム、金、タングステン、鉄、ニッケル、コバルト、モリブデン等の金属又はこれらの合金、燐青銅、鉄入り銅等の単層又は積層体を基材とし、基材の表面に銀を含む反射膜を形成したものを用いることができる。   The base 10 is provided with a conductive member containing silver and an insulating base material. The conductive member may, for example, be a metal member containing silver constituting a lead and a wiring. When the conductive member is a lead, for example, a single layer or laminate of a metal such as silver, copper, aluminum, gold, tungsten, iron, nickel, cobalt, molybdenum or an alloy thereof, phosphor bronze, iron-containing copper, etc. As a base material, what formed the reflective film containing silver in the surface of a base material can be used.

導電部材が配線の場合には、例えば、銀、銅、ニッケル、パラジウム、ロジウム、タングステン、クロム、チタン、アルミニウム、金又はこれらの合金等の単層又は積層体を基材とし、基材の表面に銀を含む反射膜を形成したものを用いることができる。尚、導電部材の基材が銀を含む場合には、リード又は配線に銀を含む反射膜を形成しなくてもよい。   When the conductive member is a wiring, for example, a single layer or a laminate of silver, copper, nickel, palladium, rhodium, tungsten, chromium, titanium, aluminum, gold or alloys thereof is used as a base material, and the surface of the base material The thing which formed the reflective film containing silver can be used. When the base of the conductive member contains silver, it is not necessary to form a reflective film containing silver on the lead or the wiring.

銀を含む反射膜としては、例えば、銀膜、銀合金からなる膜、銀に不純物が添加された膜等が挙げられる。銀合金としては、例えば、銀−金合金等が挙げられる。銀に添加される不純物としては金、銅等の金属、硫黄、セレン等が挙げられる。銀を含む反射膜は、単層及び積層構造のいずれでもよく、通常、導電部材の表面において銀を含むように構成される。   Examples of the reflective film containing silver include a silver film, a film made of a silver alloy, a film in which an impurity is added to silver, and the like. As a silver alloy, silver-gold alloy etc. are mentioned, for example. Examples of impurities added to silver include metals such as gold and copper, sulfur and selenium. The reflective film containing silver may have either a single layer structure or a laminated structure, and is usually configured to contain silver on the surface of the conductive member.

導電部材に銀を含む反射膜を形成する方法は特に限定されず、めっき法、蒸着法、スパッタ法、イオンビームアシスト蒸着法等の種々の方法が挙げられる。その膜厚は、発光素子からの光を有効に反射させることができる膜厚であればよく、例えば20nm〜10μm程度であり、50nm〜5μm程度が好ましく、100nm〜3μm程度がより好ましい。導電部材の厚み及び形状は、特に限定されず、当該分野で公知の範囲において適宜設定することができる。   The method of forming the reflective film containing silver on the conductive member is not particularly limited, and various methods such as plating, vapor deposition, sputtering, ion beam assisted vapor deposition, etc. may be mentioned. The film thickness should just be a film thickness which can reflect the light from a light emitting element effectively, for example, is about 20 nm-10 micrometers, 50 nm-about 5 micrometers are preferable, and 100 nm-about 3 micrometers are more preferable. The thickness and shape of the conductive member are not particularly limited, and can be appropriately set within the range known in the art.

絶縁性の母材としては、セラミック、樹脂(繊維強化樹脂を含む)等が挙げられる。セラミック基板としては、アルミナ、窒化アルミニウム等が挙げられる。樹脂としては、エポキシ樹脂、シリコーン樹脂、BTレジン、ポリイミド樹脂、不飽和ポリエステル樹脂などの熱硬化性樹脂や、ポリフタルアミド樹脂、ナイロン樹脂などの熱可塑性樹脂や、これらの変性樹脂又はこれらの樹脂を1種以上含むハイブリッド樹脂等が挙げられる。また、母材は単層構造でも積層構造でもよい。また、これらの母材には、当該分野で公知の着色剤、充填剤、強化繊維等を含有させてもよい。特に、着色剤は、反射率の良好な材料が好ましく、酸化チタン、酸化亜鉛等の白色のものが好ましい。充填剤としては、シリカ、アルミナ等が挙げられる。強化繊維としては、ガラス、珪酸カルシウム、チタン酸カリウム等が挙げられる。   Examples of the insulating base material include ceramics, resins (including fiber reinforced resins), and the like. As the ceramic substrate, alumina, aluminum nitride and the like can be mentioned. As the resin, thermosetting resin such as epoxy resin, silicone resin, BT resin, polyimide resin, unsaturated polyester resin, thermoplastic resin such as polyphthalamide resin, nylon resin, modified resin of these, or resin of these And hybrid resins containing one or more of them. The base material may have a single layer structure or a laminated structure. In addition, these base materials may contain colorants, fillers, reinforcing fibers and the like known in the art. In particular, the colorant is preferably a material having a good reflectance, and is preferably white such as titanium oxide or zinc oxide. Examples of the filler include silica, alumina and the like. Examples of reinforcing fibers include glass, calcium silicate, potassium titanate and the like.

図3では、導電部材が金属製のリード11により形成される。また母材12が絶縁性の樹脂で形成される。リード11は第一リード11Aと第二リード11Bの2つで構成され、一方が正極、他方が負極の外部接続端子として機能する。また、導電部材の少なくとも一部が凹部14を形成してもよい。導電部材は銀を含む金属で構成されており、高い反射率を有している。このため、側壁部15及び/又は底部16での光の反射率が向上するので、発光装置の出力を向上させることができる。特に、凹部を構成する側壁部15及び底部16の発光素子1と対面する側の面の全てが導電部材で形成されていることが好ましい。このようにすることで、更に発光装置の出力を向上させることができる。   In FIG. 3, the conductive member is formed by the metal lead 11. Further, the base material 12 is formed of an insulating resin. The lead 11 is composed of two of a first lead 11A and a second lead 11B, one of which functions as an external connection terminal of a positive electrode and the other of which is a negative electrode. In addition, at least a part of the conductive member may form the recess 14. The conductive member is made of a metal containing silver and has high reflectance. As a result, the light reflectance at the side wall portion 15 and / or the bottom portion 16 is improved, so that the output of the light emitting device can be improved. In particular, it is preferable that all of the side surfaces facing the light emitting element 1 of the side wall portion 15 and the bottom portion 16 constituting the recess be formed of a conductive member. By doing this, the output of the light emitting device can be further improved.

底部16は少なくとも発光素子1が載置できる面積を有していればよく、例えば、円形、楕円形、多角形形状の角を丸めた形状又はこれらの形を元に変形した形状とすることができる。側壁部15は底部16に対して垂直であってもよいが、断面視において凹部14の幅が底部16に向かって幅狭となるように傾斜していることが好ましい。例えば、底部16に対する法線方向に0〜45°程度、20〜40°程度で傾斜していることが適している。これにより、発光素子1からの光を効率的に上面に導くことができる。   The bottom portion 16 may have at least an area on which the light emitting element 1 can be placed. For example, the shape may be a circular, elliptical, or polygonal shape with rounded corners or a shape based on these shapes. it can. The side wall portion 15 may be perpendicular to the bottom portion 16 but is preferably inclined so that the width of the recess 14 narrows toward the bottom portion 16 in a cross sectional view. For example, it is suitable that it inclines in about 0-45 degrees and about 20-40 degrees in the normal line direction with respect to the bottom part 16. Thereby, the light from the light emitting element 1 can be efficiently guided to the upper surface.

また、導電部材を母材12の側面から突出させることが好ましい。導電部材の体積が増えることで放熱性を向上させることができる。また、導電部材の下面が母材12より露出していることが好ましい。このようにすることで、基体10を基板に実装した時に、基板と導電部材が接触する面積が増えるので放熱性を向上させることができる。
(発光素子1)
Moreover, it is preferable to make the conductive member project from the side surface of the base material 12. Heat dissipation can be improved by increasing the volume of the conductive member. Moreover, it is preferable that the lower surface of the conductive member is exposed from the base material 12. In this way, when the base 10 is mounted on the substrate, the area in which the substrate and the conductive member are in contact increases, so the heat dissipation can be improved.
(Light-emitting element 1)

発光素子1は、凹部14の底部16に実装される。発光素子1は、電圧を印加することで自ら発光する半導体素子であり、窒化物半導体等から構成される既知の半導体発光素子を適用できる。また発光素子1は、所望の発光色を得るために任意の波長のものを選択すればよい。具体的には、青色の光(波長430nm以上490nmより小さい)や緑色の光(波長490nm以上570nmより小さい)を発光する発光素子としては、InXAlYGa1-X-YN(0≦X、0≦Y、X+Y≦1)で表される窒化物系半導体を、赤色の光(波長620nm以上750nmより小さい)を発光する発光素子としては、GaAlAs,AlInGaP等で表されるヒ素系化合物やリン系化合物の半導体をそれぞれ適用することができ、さらに混晶比により発光色を変化させた発光素子を利用できる。また前記半導体素子の成長基板としては、サファイアやGaN等六方晶系の基板が用いられる。
(ワイヤ30)
The light emitting element 1 is mounted on the bottom 16 of the recess 14. The light emitting element 1 is a semiconductor element that emits light by applying a voltage, and a known semiconductor light emitting element formed of a nitride semiconductor or the like can be applied. The light emitting element 1 may be selected to have an arbitrary wavelength in order to obtain a desired emission color. Specifically, as a light emitting element that emits blue light (wavelength 430 nm or more and less than 490 nm) or green light (wavelength 490 nm or more and less than 570 nm), In X Al Y Ga 1-XY N (0 ≦ X, As a light emitting element that emits red light (wavelength: 620 nm or more and less than 750 nm), the nitride-based semiconductor represented by 0 ≦ Y, X + Y ≦ 1) includes arsenic-based compounds and phosphorus represented by GaAlAs, AlInGaP, etc. A semiconductor of a compound based compound can be applied, and a light emitting element whose emission color is changed by the mixed crystal ratio can be used. Moreover, as a growth substrate of the semiconductor element, a hexagonal substrate such as sapphire or GaN is used.
(Wire 30)

発光素子1と導電部材とは、ワイヤ30を介して電気的に接続されている。ワイヤ30は導電性に優れた金属材、例えば金やアルミ二ウム、銅、銀等で構成される。ワイヤ30を形成する方法は特に限定されないが、ボールボンディング、ウェッジボンディング等の既知のボンディング法によって形成することができる。ボールボンディングを用いる場合は、ワイヤ30の先端に予めボール24を形成する。例えばワイヤを金線とする場合、電気トーチからの放電等により金線の先端を溶解してボール24を形成する。図4の拡大断面図は、このようなボールボンディングの例示している。ワイヤ30の先端にボール24を形成することでワイヤ30と導電部材20との接触面積が広くなるのでワイヤ断線が抑制される。尚、ボール24はワイヤ30の一部である。
(保護膜32)
The light emitting element 1 and the conductive member are electrically connected via the wire 30. The wire 30 is made of a metal material having excellent conductivity, such as gold, aluminum, copper, silver or the like. Although the method of forming the wire 30 is not particularly limited, it can be formed by a known bonding method such as ball bonding or wedge bonding. When using ball bonding, a ball 24 is formed in advance at the tip of the wire 30. For example, when the wire is a gold wire, the tip of the gold wire is melted by discharge from an electric torch or the like to form a ball 24. The enlarged cross-sectional view of FIG. 4 illustrates such ball bonding. By forming the balls 24 at the tip of the wire 30, the contact area between the wire 30 and the conductive member 20 becomes wide, so wire breakage is suppressed. The ball 24 is a part of the wire 30.
(Protective film 32)

保護膜32は導電部材の少なくとも一部を被覆する。導電部材を保護膜32で被覆することで、導電部材と硫化水素とが接触することを抑制できるので、導電部材が硫化することを抑制できる。また、発光素子1も保護膜32で被覆してもよい。保護膜32が導電部材と発光素子1とを連続して被覆することで、発光素子1の周囲に位置する導電部材を被覆しやすくなる。これにより、発光素子1の周囲に位置する導電部材が硫化によって変色することを抑制できるので出力維持に繋がる。保護膜32は、酸化アルミニウム、窒化ケイ素、窒化アルミニウム、酸化チタンおよび酸化タンタル等の絶縁性と透光性に優れた材料を用いることが好ましい。保護膜32は、スパッタリング、真空蒸着法等の既知の成膜方法によって形成される。特に保護膜32をスパッタリングで形成すると、保護膜32と導電性部材との密着性を高くできるので好ましい。   The protective film 32 covers at least a part of the conductive member. By covering the conductive member with the protective film 32, the contact between the conductive member and hydrogen sulfide can be suppressed, and therefore, the sulfurization of the conductive member can be suppressed. The light emitting element 1 may also be covered with the protective film 32. When the protective film 32 covers the conductive member and the light emitting element 1 continuously, the conductive member located around the light emitting element 1 can be easily covered. As a result, it is possible to suppress discoloration of the conductive member located around the light emitting element 1 due to sulfurization, which leads to output maintenance. The protective film 32 is preferably made of a material having excellent insulation and transparency, such as aluminum oxide, silicon nitride, aluminum nitride, titanium oxide, and tantalum oxide. The protective film 32 is formed by a known film forming method such as sputtering or vacuum evaporation. In particular, it is preferable to form the protective film 32 by sputtering because the adhesion between the protective film 32 and the conductive member can be increased.

ただし、ワイヤ30と導電部材との接続部分22の周囲においてワイヤ30の影になる部分の隙間は狭いので、接続部分22の周囲に位置する導電部材を覆う保護膜32を形成しにくい。例えば、真空蒸着法で保護膜32を形成する場合では、隙間が狭い部分には気化又は昇華させた保護膜32を形成する材料が行き渡りにくいので保護膜32を形成しにくい。特に、スパッタリング等の保護膜形成材料の供給源から保護膜形成部分への移動直進性が高い方法を用いた場合は、ワイヤ30と導電部材との接続部分22の周囲に位置しワイヤ30の影となる導電部材に、保護膜32を形成する材料を付着させにくいので保護膜32を形成しにくい。このため、接続部分22の周囲に位置する導電部材の少なくとも一部は保護膜32に覆われないおそれがある。つまり、保護膜32はワイヤ30と導電部材との接続部分22の少なくとも一部から離間されやすい。尚、ワイヤ30の影とは、言い換えるとワイヤ30の下側の領域のことである。
(第一樹脂部材41)
However, since the gap of the shadowed portion of the wire 30 around the connection portion 22 between the wire 30 and the conductive member is narrow, it is difficult to form the protective film 32 covering the conductive member located around the connection portion 22. For example, in the case where the protective film 32 is formed by a vacuum evaporation method, the protective film 32 is difficult to form because the material forming the protective film 32 which has been vaporized or sublimated hardly spreads in the portion where the gap is narrow. In particular, in the case of using a method such as sputtering or the like in which the movement straightness from the supply source of the protective film forming material to the protective film forming portion is high, the shadow of the wire 30 is located around the connection portion 22 between the wire 30 and the conductive member. Since it is difficult to attach the material for forming the protective film 32 to the conductive member, the protective film 32 is difficult to form. Therefore, at least a part of the conductive member located around the connection portion 22 may not be covered by the protective film 32. That is, the protective film 32 is likely to be separated from at least a part of the connection portion 22 between the wire 30 and the conductive member. The shadow of the wire 30 is, in other words, the area under the wire 30.
(First resin member 41)

このため、接続部分22の周囲に位置する導電部材に含まれる銀が大気中に含まれる硫化水素により硫化して劣化し、ワイヤ断線が生じるおそれがある。そこで、保護膜32と接続部分22の周囲に位置する導電部材と、ワイヤ30のそれぞれの少なくとも一部を、硫化水素に対するガスバリア性の高い第一樹脂部材41で連続して被覆する。つまり、保護膜32で被覆されていない導電部材の少なくとも一部を第一樹脂部材41で被覆する。   For this reason, silver contained in the conductive member located around the connection portion 22 may be sulfurized and deteriorated by hydrogen sulfide contained in the atmosphere, and wire breakage may occur. Therefore, at least a part of each of the conductive member positioned around the protective film 32 and the connection portion 22 and the wire 30 is continuously covered with the first resin member 41 having high gas barrier property to hydrogen sulfide. That is, at least a part of the conductive member not covered with the protective film 32 is covered with the first resin member 41.

この様子を、図3において接続部分22を拡大した図4の拡大断面図に示す。図4に示すように、第一樹脂部材41は、保護膜32と、接続部分の周囲に位置する導電部材20と、ワイヤ30のそれぞれの少なくとも一部を連続して被覆する。特に、導電部材20から保護膜32の端縁にかけての領域を連続的に覆うことで、導電部材20を外部に露出させることなく保護できるので好ましい。第一樹脂部材41の材料は特に限定されず、ポリカーボネート樹脂、エポキシ樹脂、フェノール樹脂、シリコーン樹脂、アクリル樹脂、TPX樹脂、ポリノルボルネン樹脂、又はこれらの変性樹脂やこれらの樹脂を1種以上含むハイブリッド樹脂等を用いることができる。特に、第一樹脂部材41の材料としては炭素−炭素結合を有する樹脂が好ましい。炭素−炭素結合系の材料は比較的ガスバリア性が高いので硫化水素を透過しにくいからである。炭素−炭素結合を有する樹脂としては、エポキシ樹脂が挙げられる。   This situation is shown in the enlarged cross-sectional view of FIG. 4 in which the connection portion 22 is enlarged in FIG. As shown in FIG. 4, the first resin member 41 continuously covers at least a part of each of the protective film 32, the conductive member 20 located around the connection portion, and the wire 30. In particular, by continuously covering the area from the conductive member 20 to the edge of the protective film 32, the conductive member 20 can be protected without being exposed to the outside, which is preferable. The material of the first resin member 41 is not particularly limited, and a polycarbonate resin, an epoxy resin, a phenol resin, a silicone resin, an acrylic resin, a TPX resin, a polynorbornene resin, or a modified resin thereof or a hybrid containing one or more of these resins Resin etc. can be used. In particular, as the material of the first resin member 41, a resin having a carbon-carbon bond is preferable. This is because carbon-carbon bonded materials have relatively high gas barrier properties and thus are difficult to permeate hydrogen sulfide. An epoxy resin is mentioned as resin which has a carbon-carbon bond.

なお、本明細書においてガスバリア性とは、硫化水素に対する透過度を示す指標であり、例えば硫化水素に対する気体透過係数を示す。気体透過係数の単位としては、cm3・cm/(m2・24hrs・atm)やcm3・cm/(cm2・s・cmHg)等が使われる。また部材の大きさ等により硫化水素に対する気体透過係数で測定できない場合には、部材を特定し、その特定した部材と類似の部材の測定結果より硫化水素に対する気体透過係数を求めることができる。また、硫化水素に対する気体透過係数の測定が困難な場合は、水蒸気透過係数を用いてもよい。水蒸気透過係数の単位としては、ng/(m・s・Pa)等が使われる。 In the present specification, the gas barrier property is an index indicating the permeability to hydrogen sulfide, and indicates, for example, a gas permeation coefficient to hydrogen sulfide. As a unit of the gas permeation coefficient, cm 3 · cm / (m 2 · 24 hrs · atm), cm 3 · cm / (cm 2 · s · cm Hg), etc. are used. If the gas permeation coefficient to hydrogen sulfide can not be measured due to the size of the member, the member can be identified, and the gas permeation coefficient to hydrogen sulfide can be determined from the measurement results of members similar to the identified member. In addition, when it is difficult to measure the gas permeation coefficient for hydrogen sulfide, the water vapor permeation coefficient may be used. As a unit of the water vapor transmission coefficient, ng / (m · s · Pa) or the like is used.

ガスバリア性の優れた樹脂は、一般に耐光性に劣る。よって、発光素子が発する光に晒されて劣化することが懸念される。そこで本実施の一形態においては、発光素子1を凹部14の底部16に実装した時に、発光素子1の上面が凹部14を構成する側壁部15の上面よりも下側に位置する。このようにすることで、ワイヤ30と導電部材20との接続部分22が発光素子1からの光が直接照射されない。接続部分22が発光素子1からの光が直接照射されないので、接続部分22の周囲に位置する導電部材20を被覆する第一樹脂部材41が、発光素子1からの光で劣化することを抑制できる。更に、第一樹脂部材41は、側壁部15の側面から離間した位置に設けられていることが好ましい。側壁部15の側面に第一樹脂部材41が形成されないので、第一樹脂部材41に発光素子1からの光が照射されにくくなり、第一樹脂部材41が光により劣化することを抑制できる。特に、第一樹脂部材41の全てが発光素子1から直接照射される光の範囲外に配置されることが好ましい。このようにすることで、更に第一樹脂部材41が発光素子1からの光により劣化することを抑制できる。接続部分22の周囲に位置する導電部材20が硫化しにくいので、ワイヤ30と導電部材20の断線を抑制することができる。   Resins with excellent gas barrier properties generally have poor light resistance. Therefore, there is a concern that the light emitting element may be exposed to the light emitted and deteriorated. Therefore, in the present embodiment, when the light emitting element 1 is mounted on the bottom portion 16 of the recess 14, the upper surface of the light emitting element 1 is positioned lower than the upper surface of the side wall 15 constituting the recess 14. By doing this, the connection portion 22 between the wire 30 and the conductive member 20 is not directly irradiated with the light from the light emitting element 1. Since the connection portion 22 is not directly irradiated with the light from the light emitting element 1, the first resin member 41 covering the conductive member 20 located around the connection portion 22 can be prevented from being deteriorated by the light from the light emitting element 1 . Furthermore, the first resin member 41 is preferably provided at a position separated from the side surface of the side wall portion 15. Since the first resin member 41 is not formed on the side surface of the side wall portion 15, the light from the light emitting element 1 is less likely to be irradiated to the first resin member 41, and deterioration of the first resin member 41 due to light can be suppressed. In particular, it is preferable that all of the first resin member 41 be disposed outside the range of the light directly emitted from the light emitting element 1. By doing this, it is possible to further suppress the deterioration of the first resin member 41 due to the light from the light emitting element 1. Since the conductive member 20 located around the connection portion 22 is not susceptible to sulfurization, disconnection of the wire 30 and the conductive member 20 can be suppressed.

尚、発光素子1から発する光には発光素子1から直接照射される光(一次光)だけでなく、後述する第二樹脂部材等によって反射及び/又は屈折される光(二次光)もある。発光素子1から直接照射される光(一次光)とは、発光素子1の表面からその周囲の遮光部材(例えば、基体)を結ぶ直線で規定することができる。   The light emitted from the light emitting element 1 includes not only light (primary light) directly irradiated from the light emitting element 1 but also light (secondary light) reflected and / or refracted by a second resin member or the like described later . The light (primary light) directly emitted from the light emitting element 1 can be defined by a straight line connecting the surface of the light emitting element 1 to a light shielding member (for example, a base) therearound.

第一樹脂部材41の厚さは特に限定されないが、50μm〜200μmが好ましい。第一樹脂部材41が200μmよりも厚い場合には、発光素子1からの光が当たりやすくなるので第一樹脂部材41が光により劣化しやすくなる。また第一樹脂部材41が50μmよりも薄い場合には、接続部分22の周囲に位置する導電部材を第一樹脂部材41で被覆しにくくなる。
(第一光反射部材)
Although the thickness in particular of the 1st resin member 41 is not limited, 50 micrometers-200 micrometers are preferred. When the first resin member 41 is thicker than 200 μm, the light from the light emitting element 1 is easily hit, so the first resin member 41 is easily deteriorated by light. When the first resin member 41 is thinner than 50 μm, it becomes difficult to cover the conductive member located around the connection portion 22 with the first resin member 41.
(First light reflecting member)

第一樹脂部材41に、第一光反射部材を含有させてもよい。これによって発光素子1が発する光の一部を第一光反射部材で反射させる結果、第一樹脂部材41に照射される光量を低減させ、第一樹脂部材41の劣化を低減させることができる。また、第一光反射部材で反射させた光を出力光に振り向けることで、光の取り出し効率を向上させることもできる。第一光反射部材の材料は特に限定されないが、酸化チタン、酸化アルミニウム、炭酸カルシウム等が好適に利用できる。   The first resin member 41 may contain the first light reflecting member. As a result of reflecting a part of the light emitted from the light emitting element 1 by the first light reflecting member, it is possible to reduce the amount of light irradiated to the first resin member 41 and to reduce the deterioration of the first resin member 41. Moreover, the light extraction efficiency can also be improved by diverting the light reflected by the first light reflecting member to the output light. The material of the first light reflecting member is not particularly limited, but titanium oxide, aluminum oxide, calcium carbonate or the like can be suitably used.

第一樹脂部材41の形状は特に限定されないが、平面視において外形を円形状とすることが好ましい。これにより、容易に第一樹脂部材41を形成することができる。例えば発光装置の製造時において、第一樹脂部材41を構成する未硬化の樹脂を、ポッティングにより塗布してもよい。このように未硬化の第一樹脂部材41を液状で塗布することにより、スパッタリング等で形成した保護膜では成膜しにくい隙間に樹脂を入り込ませることができる。すなわち、スパッタリング等で保護膜32を成膜しつつ、保護膜32を形成できなかった部位を第一樹脂部材41で被覆することができる。   The shape of the first resin member 41 is not particularly limited, but it is preferable to make the outer shape circular in plan view. Thereby, the first resin member 41 can be easily formed. For example, at the time of manufacture of the light emitting device, the uncured resin constituting the first resin member 41 may be applied by potting. As described above, by applying the uncured first resin member 41 in a liquid state, it is possible to allow the resin to enter into a gap where it is difficult to form a film by a protective film formed by sputtering or the like. That is, while forming the protective film 32 by sputtering or the like, the portion where the protective film 32 can not be formed can be covered with the first resin member 41.

また、未硬化の第一樹脂部材41にフィラーを添加するなどして、粘度を調整し、ポッティングで供給される絶縁性の第一樹脂部材41が不要な範囲に広がりにくいようにできる。また粘度を調整することで第一樹脂部材41の保型性を高め、意図した部位に第一樹脂部材41を留めるように制御し易くなる。硬化された第一樹脂部材41の円形状の直径は特に限定されないが、30μm以上800μm以下とすることが好ましい。第一樹脂部材41の円形状の直径が800μmよりも大きい場合には、発光素子1からの光が当たりやすくなるので第一樹脂部材41が光により劣化しやすくなる。また第一樹脂部材41の円形状の直径が30μmよりも小さい場合には、接続部分22の周囲に位置する導電部材を第一樹脂部材41で被覆しにくくなる。第一樹脂部材41に添加されるフィラーの重量は特に限定されないが、第一樹脂部材41の重量に対して0.5〜1.5%添加することが好ましい。この範囲で添加することで隙間に未硬化の第一樹脂部材41が入り込みやすく、且つ、不要な範囲に広がりにくい粘度にすることができる。
(第二樹脂部材42)
Moreover, a filler is added to the unhardened 1st resin member 41, a viscosity is adjusted, and it can be made hard to spread the insulating 1st resin member 41 supplied by potting in the unnecessary range. Further, by adjusting the viscosity, the shape retention property of the first resin member 41 is enhanced, and it becomes easy to control so that the first resin member 41 is kept at the intended portion. Although the diameter of the circular shape of the hardened | cured 1st resin member 41 is not specifically limited, It is preferable to be referred to as 30 micrometers or more and 800 micrometers or less. When the diameter of the circular shape of the first resin member 41 is larger than 800 μm, the light from the light emitting element 1 is easily hit, so the first resin member 41 is easily deteriorated by light. When the diameter of the circular shape of the first resin member 41 is smaller than 30 μm, it becomes difficult to cover the conductive member located around the connection portion 22 with the first resin member 41. The weight of the filler added to the first resin member 41 is not particularly limited, but it is preferable to add 0.5 to 1.5% with respect to the weight of the first resin member 41. By adding in this range, the uncured first resin member 41 can easily enter the gap, and the viscosity can be made difficult to spread in an unnecessary range.
(Second resin member 42)

さらに発光装置は、発光素子1と第一樹脂部材41とを被覆する第二樹脂部材42を設ける。第二樹脂部材42は、第一樹脂部材41よりも硫化水素に対するガスバリア性が低い。すなわち、第一樹脂部材41の硫化水素に対する気体透過係数は、第二樹脂部材42の硫化水素に対する気体透過係数よりも低い。これにより、ワイヤ30と導電部材との接続部分22の周囲に位置する導電部材を硫化水素を透過し難い第一樹脂部材41で被覆することにより硫化を阻止し、ワイヤ30の断線を防止することができる。   The light emitting device further includes a second resin member 42 covering the light emitting element 1 and the first resin member 41. The second resin member 42 has lower gas barrier property to hydrogen sulfide than the first resin member 41. That is, the gas permeability coefficient to hydrogen sulfide of the first resin member 41 is lower than the gas permeability coefficient to hydrogen sulfide of the second resin member 42. Thus, the conductive member located around the connection portion 22 between the wire 30 and the conductive member is covered with the first resin member 41 which hardly transmits hydrogen sulfide, thereby preventing sulfidation and preventing the wire 30 from being broken. Can.

第一樹脂部材41の硫化水素に対する気体透過係数が第二樹脂部材42の硫化水素の気体透過係数よりも低ければ特に限定されないが、第一樹脂部材41と第二樹脂部材42の硫化水素に対する気体透過係数の比が1:2が好ましく、1:5がより好ましく、1:10が更に好ましい。尚、硫化水素に対する気体透過係数の代わりに水蒸気透過係数を用いても第一樹脂部材41と第二樹脂部材42の硫化水素の気体透過係数に対する比が1:2が好ましく、1:5がより好ましく、1:10が更に好ましい。このようにすることで、第一樹脂部材41が更に硫化水素を透過し難くなり、ワイヤ30の断線を防止することができる。   The gas permeability coefficient to hydrogen sulfide of the first resin member 41 is not particularly limited as long as it is lower than the gas permeability coefficient of hydrogen sulfide of the second resin member 42, but the gas to hydrogen sulfide of the first resin member 41 and the second resin member 42 The permeability coefficient ratio is preferably 1: 2, more preferably 1: 5, and still more preferably 1:10. Even if a water vapor permeability coefficient is used instead of the gas permeability coefficient to hydrogen sulfide, the ratio of the hydrogen sulfide gas permeability coefficient of the first resin member 41 to the second resin member 42 is preferably 1: 2, more preferably 1: 5. Preferably, 1:10 is more preferred. By so doing, the first resin member 41 is further difficult to permeate hydrogen sulfide, and disconnection of the wire 30 can be prevented.

第二樹脂部材42は発光素子1から発される光が直接照射される位置に設けられるので、第二樹脂部材42の耐光性は第一樹脂部材41の耐光性よりも高いことが好ましい。図3の断面図に示すように、発光素子1の上面に面した第二樹脂部材42は、高い耐光性によって劣化しにくいので発光装置の信頼性向上に寄与する。一方で、第二樹脂部材42が第一樹脂部材41よりガスバリア性に劣るとしても、ワイヤ断線が懸念される接続部分22の周囲に位置する導電部材は、硫化水素に対するガスバリア性に優れた第一樹脂部材41で被膜することによって、導電部材の硫化が抑制されワイヤ断線を抑制できる。   Since the second resin member 42 is provided at a position where the light emitted from the light emitting element 1 is directly irradiated, it is preferable that the light resistance of the second resin member 42 be higher than the light resistance of the first resin member 41. As shown in the cross-sectional view of FIG. 3, the second resin member 42 facing the upper surface of the light emitting element 1 is unlikely to deteriorate due to high light resistance, and thus contributes to the improvement of the reliability of the light emitting device. On the other hand, even if the second resin member 42 is inferior to the first resin member 41 in the gas barrier property, the conductive member located around the connection portion 22 where wire breakage is a concern is the first excellent in the gas barrier property to hydrogen sulfide. By coating with the resin member 41, sulfidation of the conductive member can be suppressed, and wire breakage can be suppressed.

第二樹脂部材42の材料は特に限定されず、ポリカーボネート樹脂、エポキシ樹脂、フェノール樹脂、シリコーン樹脂、アクリル樹脂、TPX樹脂、ポリノルボルネン樹脂、又はこれらの変性樹脂やこれらの樹脂を1種以上含むハイブリッド樹脂等を用いることができる。特に、第二樹脂部材42の材料としては耐光性に優れたジメチル系シリコーン樹脂、フェニル系シリコーン樹脂が好ましい。   The material of the second resin member 42 is not particularly limited, and a polycarbonate resin, an epoxy resin, a phenol resin, a silicone resin, an acrylic resin, a TPX resin, a polynorbornene resin, or a modified resin thereof or a hybrid containing one or more of these resins Resin etc. can be used. In particular, as a material of the second resin member 42, dimethyl silicone resin and phenyl silicone resin which are excellent in light resistance are preferable.

第二樹脂部材42の形状は特に限定されないが、レンズ形状であることが好ましい。レンズ形状とすることで、レンズと空気との界面で発光素子1からの光が反射することが抑制されるので、光取り出し効率が向上する。また、光取り出し効率が向上されることで、レンズ内で反射される光(二次光)が低減される。これにより、第一樹脂部材41に照射される光が低減され、第一樹脂部材41の劣化を抑制できる。第二樹脂部材42の形成方法は特に限定されず、圧縮成型や射出成型等によって形成することができる。その他、第二樹脂部材42の材料の粘度を最適化して、発光素子1の上に滴下もしくは描画して、第二樹脂部材42自体の表面張力によって、レンズ形状を形成してもよい。
(波長変換部材50)
The shape of the second resin member 42 is not particularly limited, but is preferably a lens shape. The lens shape suppresses the reflection of the light from the light emitting element 1 at the interface between the lens and air, so that the light extraction efficiency is improved. In addition, the light extraction efficiency is improved, whereby light (secondary light) reflected in the lens is reduced. Thereby, the light irradiated to the 1st resin member 41 is reduced, and degradation of the 1st resin member 41 can be suppressed. The method of forming the second resin member 42 is not particularly limited, and the second resin member 42 can be formed by compression molding, injection molding, or the like. In addition, the viscosity of the material of the second resin member 42 may be optimized and dropped or drawn on the light emitting element 1 to form a lens shape by the surface tension of the second resin member 42 itself.
(Wavelength conversion member 50)

また、発光装置に波長変換部材50が含まれてもよい。波長変換部材50は、発光素子1が発する第一ピーク波長の光を、この第一ピーク波長とは波長の異なる第二ピーク波長の光に波長変換する部材である。波長変換部材50としては、発光素子1からの光で励起可能な蛍光体が使用される。例えば、青色発光素子又は紫外線発光素子で励起可能な蛍光体としては、セリウムで賦活されたイットリウム・アルミニウム・ガーネット系蛍光体(Ce:YAG)、セリウムで賦活されたルテチウム・アルミニウム・ガーネット系蛍光体(Ce:LAG)、ユウロピウムおよび/又はクロムで賦活された窒素含有アルミノ珪酸カルシウム系蛍光体(CaO−Al23−SiO2)、ユウロピウムで賦活されたシリケート系蛍光体((Sr,Ba)2SiO4)、βサイアロン蛍光体、CASN系蛍光体、SCASN系蛍光体等の窒化物系蛍光体;KSF系蛍光体等のフッ化物系蛍光体、硫化物系蛍光体、塩化物系蛍光体、ケイ酸塩系蛍光体、リン酸塩系蛍光体、量子ドット蛍光体などが挙げられる。尚、KSF系蛍光体の一般式はA2[M1-aMn4+a6]…(I)で表すことができる。(式中、Aは、K+、Li+、Na+、Rb+、Cs+及びNH4+からなる群から選択される少なくとも1種の陽イオンを示し、Mは、第4族元素及び第14族元素からなる群から選択される少なくとも1種の元素を示し、aは0.01<a<0.20を満たす。)また、一般式(I)におけるAがK+を含み、MがSiを含むフッ化物系蛍光体でもよい。これらの蛍光体と、青色発光素子又は紫外線発光素子と組み合わせることにより、様々な色の発光装置(例えば白色系の発光装置)を製造することができる。 In addition, the wavelength conversion member 50 may be included in the light emitting device. The wavelength conversion member 50 is a member that converts the light of the first peak wavelength emitted by the light emitting element 1 into light of a second peak wavelength different from the first peak wavelength. As the wavelength conversion member 50, a phosphor that can be excited by the light from the light emitting element 1 is used. For example, as a phosphor that can be excited by a blue light emitting element or an ultraviolet light emitting element, a cerium-activated yttrium aluminum garnet-based phosphor (Ce: YAG), a cerium-activated lutetium aluminum garnet-based phosphor Nitrogen-containing calcium aluminosilicate phosphor activated with (Ce: LAG), europium and / or chromium (CaO-Al 2 O 3 -SiO 2 ), europium activated silicate phosphor ((Sr, Ba) 2 SiO 4 ), β sialon phosphor, nitride phosphor such as CASN phosphor, SCASN phosphor; fluoride phosphor such as KSF phosphor, sulfide phosphor, chloride phosphor And silicate phosphors, phosphate phosphors, quantum dot phosphors, and the like. In general formula KSF based phosphor can be represented by A2 [M 1-a Mn 4 + a F 6] ... (I). (Wherein, A represents at least one cation selected from the group consisting of K + , Li + , Na + , Rb + , Cs + and NH 4 +, and M represents a Group 4 element and And at least one element selected from the group consisting of Group 14 elements, wherein a satisfies 0.01 <a <0.20), and A in the general formula (I) contains K + , and M is It may be a fluoride-based phosphor containing Si. By combining these phosphors with a blue light emitting element or an ultraviolet light emitting element, light emitting devices of various colors (for example, white light emitting devices) can be manufactured.

波長変換部材50が配置される場所は特に限定されないが、発光素子1からの光が直接照射される発光素子1の上方や側方に配置されることが好ましい。例えば、第二樹脂部材42に含有させてもよい。このような構成により発光装置は、発光素子1が発する第一ピーク波長の光と、波長変換部材50が発する第二ピーク波長の光とが混色された混色光を出力することができる。例えば、発光素子1に青色LEDを、波長変換部材50にYAG等の蛍光体を用いれば、青色LEDの青色光と、この青色光で励起されて蛍光体が発する黄色光の蛍光とを混合させて得られる白色光を出力する発光装置を構成できる。
(第三樹脂部材43)
The place where the wavelength conversion member 50 is disposed is not particularly limited, but it is preferable that the wavelength conversion member 50 be disposed above or to the side of the light emitting element 1 to which the light from the light emitting element 1 is directly irradiated. For example, the second resin member 42 may contain it. With such a configuration, the light emitting device can output mixed color light in which the light of the first peak wavelength emitted by the light emitting element 1 and the light of the second peak wavelength emitted by the wavelength conversion member 50 are mixed. For example, if a blue LED is used for the light emitting element 1 and a phosphor such as YAG is used for the wavelength conversion member 50, blue light of the blue LED and fluorescence of yellow light which is excited by the blue light and emitted by the phosphor are mixed. It is possible to configure a light emitting device that outputs white light obtained by
(Third resin member 43)

第二樹脂部材42は、発光素子1及び第一樹脂部材41を被覆する。第二樹脂部材42は発光素子1と接触して発光素子1を被覆してもよいが、第二樹脂部材42とは異なる樹脂部材を介して発光素子1を被覆してもよい。図3の例では、発光素子1を第三樹脂部材43が直接被覆し、第二樹脂部材42が第三樹脂部材43を介して発光素子1を被覆している。尚、発光素子1が保護膜32で被覆されている場合は、発光素子1の表面に形成された保護膜32を第三樹脂部材43が直接被覆する。第三樹脂部材43の材料は特に限定されず、ポリカーボネート樹脂、エポキシ樹脂、フェノール樹脂、シリコーン樹脂、アクリル樹脂、ポリメチルペンテン樹脂、ポリノルボルネン樹脂、又はこれらの変性樹脂やこれらの樹脂を1種以上含むハイブリッド樹脂等を用いることができる。特に、第三樹脂部材43の材料としては耐光性に優れたジメチル系シリコーン樹脂、フェニル系シリコーン樹脂が好ましい。   The second resin member 42 covers the light emitting element 1 and the first resin member 41. The second resin member 42 may be in contact with the light emitting element 1 to cover the light emitting element 1, or may cover the light emitting element 1 via a resin member different from the second resin member 42. In the example of FIG. 3, the third resin member 43 directly covers the light emitting element 1, and the second resin member 42 covers the light emitting element 1 via the third resin member 43. When the light emitting element 1 is covered with the protective film 32, the third resin member 43 directly covers the protective film 32 formed on the surface of the light emitting element 1. The material of the third resin member 43 is not particularly limited, and one or more of polycarbonate resin, epoxy resin, phenol resin, silicone resin, acrylic resin, polymethylpentene resin, polynorbornene resin, or modified resin thereof, or one or more of these resins The hybrid resin etc. which contain can be used. In particular, as a material of the third resin member 43, dimethyl silicone resin and phenyl silicone resin excellent in light resistance are preferable.

また、硫化水素に対するガスバリア性が第一樹脂部材41よりも低く、かつ第二樹脂部材42よりも高い樹脂で第三樹脂部材43構成することが好ましい。このようにすることで、第二樹脂部材42で直接発光素子1を被覆する場合よりも、第三樹脂部材43で直接発光素子1を被覆することで発光素子1の周囲に位置する導電部材が硫化することを抑制できる。第三樹脂部材43は、発光素子1を直接被覆するので第一樹脂部材41よりも耐光性が高い方が好ましい。尚、第一樹脂部材41は発光素子1からの光が直接照射されにくいので、耐光性に優れた樹脂を選択するよりも、第三樹脂部材43よりガスバリア性が高い樹脂を選択することが好ましい。このような構成になる樹脂の組み合わせとしては、例えば第一樹脂部材41にエポキシ樹脂、第二樹脂部材42にジメチル系シリコーン樹脂、第三樹脂部材43にフェニル系シリコーン樹脂が挙げられる。   In addition, it is preferable that the third resin member 43 be formed of a resin having a gas barrier property to hydrogen sulfide lower than that of the first resin member 41 and higher than that of the second resin member 42. By doing this, the conductive member located around the light emitting element 1 by covering the light emitting element 1 directly with the third resin member 43 is more than when covering the light emitting element 1 directly with the second resin member 42 Sulfurization can be suppressed. Since the third resin member 43 directly covers the light emitting element 1, it is preferable that the light resistance be higher than that of the first resin member 41. In addition, since it is difficult for the first resin member 41 to be irradiated with light from the light emitting element 1 directly, it is preferable to select a resin having a gas barrier property higher than that of the third resin member 43 rather than selecting a resin excellent in light resistance. . Examples of combinations of resins having such a configuration include epoxy resin for the first resin member 41, dimethyl silicone resin for the second resin member 42, and phenyl silicone resin for the third resin member 43.

また第三樹脂部材43の屈折率は特に限定されないが、屈折率が高い方が、発光素子1との屈折率差が小さくなるため好ましい。第三樹脂部材43の屈折率を高めることで、発光素子1と第三樹脂部材43の屈折率差が小さくなり光取り出し効率を向上させることができる。従って、第三樹脂部材43の屈折率は1.5〜1.6とすることが好ましい。屈折率が高い樹脂としてはフェニル系シリコーン樹脂が挙げられる。   The refractive index of the third resin member 43 is not particularly limited, but a higher refractive index is preferable because the difference in refractive index with the light emitting element 1 is smaller. By increasing the refractive index of the third resin member 43, the difference in refractive index between the light emitting element 1 and the third resin member 43 is reduced, and the light extraction efficiency can be improved. Therefore, the refractive index of the third resin member 43 is preferably 1.5 to 1.6. Examples of resins having a high refractive index include phenyl silicone resins.

また第三樹脂部材43は、第一樹脂部材41と離間させることが好ましい。第三樹脂部材43は、発光素子1を直接被覆するので第三樹脂部材43と第一樹脂部材41とを離間させることで、発光素子1からの光が第一樹脂部材41に当たることを抑制できる。このため、第一樹脂部材41が光により劣化することを抑制できる。第三樹脂部材43が凹部内に位置する場合には、第三樹脂部材43の上面が側壁部15の上面より下側に位置することで第一樹脂部材41と容易に離間させることができるので好ましい。さらに第三樹脂部材43には、上述した波長変換部材50を含むこともできる。これにより、第三樹脂部材43内で励起させることで、第三樹脂部材43から第二樹脂部材42に導入された光は、第二樹脂部材42内で励起させるために光を屈折及び/又は反射させなくてもよいので、第二樹脂部材42内での光路長を短くできる。このため、第二樹脂部材42に被覆される第一樹脂部材41に当たる発光素子1からの光を低減できるので、第一樹脂部材41の劣化を抑制することができる。   The third resin member 43 is preferably separated from the first resin member 41. Since the third resin member 43 directly covers the light emitting element 1, separation of the third resin member 43 and the first resin member 41 can suppress the light from the light emitting element 1 from hitting the first resin member 41. . For this reason, it can suppress that the 1st resin member 41 degrades by light. When the third resin member 43 is positioned in the recess, the upper surface of the third resin member 43 can be easily separated from the first resin member 41 by being positioned below the upper surface of the side wall portion 15. preferable. Furthermore, the third resin member 43 can also include the wavelength conversion member 50 described above. Thereby, the light introduced from the third resin member 43 to the second resin member 42 by being excited in the third resin member 43 is refracted and / or refracted in order to excite the light in the second resin member 42. Since the light does not have to be reflected, the optical path length in the second resin member 42 can be shortened. For this reason, since the light from the light emitting element 1 which hits the 1st resin member 41 covered by the 2nd resin member 42 can be reduced, degradation of the 1st resin member 41 can be controlled.

なお、蛍光体等の波長変換部材50は第三樹脂部材43中に均一に分散させて配置する他、発光素子1と離間するように第三樹脂部材43中に偏在させてもよい。これにより、発光素子1の発する光や熱から波長変換部材50を保護できる。また波長変換部材50は、第三樹脂部材43中に限らず、例えば第二樹脂部材42中に含ませてもよい。また第二樹脂部材42中においても、同様に均一に分散させて配置する他、一部に偏在させたり、あるいは樹脂の表面やその近傍のみに設けてもよい。さらに波長変換部材は一種類のみならず、二種類以上の波長変換部材を組み合わせてもよい。例えば第一波長変換部材を第三樹脂部材43中に、また第一波長変換部材とは異なる第二波長変換部材を第二樹脂部材42中に配置することもできる。   The wavelength conversion member 50 such as a phosphor may be uniformly dispersed in the third resin member 43, or may be unevenly distributed in the third resin member 43 so as to be separated from the light emitting element 1. Thereby, the wavelength conversion member 50 can be protected from the light and heat which the light emitting element 1 emits. Further, the wavelength conversion member 50 may be contained not only in the third resin member 43 but in, for example, the second resin member 42. Also, in the second resin member 42, in addition to being uniformly dispersed and disposed in the same manner, it may be partially distributed, or may be provided only on the surface of the resin or in the vicinity thereof. Furthermore, not only one type of wavelength conversion member, but also two or more types of wavelength conversion members may be combined. For example, the first wavelength conversion member may be disposed in the third resin member 43, and a second wavelength conversion member different from the first wavelength conversion member may be disposed in the second resin member 42.

また、第三樹脂部材は必ずしも必須でなく、例えば変形例として図5や図6の断面図に示すように、第三樹脂部材を有しない発光装置とすることもできる。また、導電部材としてリードに代えて、配線を用いてもよい。図5、図6の例では、側壁部15の上面に位置する配線20Bと基体10の下面を構成する裏面電極26とがビア28によって電気的に接続される。これによって裏面電極26で電気を供給することができる。尚、裏面電極26及びビア28も導電部材の一部である。側壁部15は、図5に示すように階段状に構成されていてもよい。側壁部15が階段状であることで、発光素子1と第一樹脂部材41とを被覆する第二樹脂部材42を母材12内に容易に形成することができる。
(実施形態2)
In addition, the third resin member is not necessarily essential. For example, as shown in the cross-sectional views of FIG. 5 and FIG. 6 as a modified example, a light emitting device without the third resin member may be provided. Further, instead of the leads as the conductive members, wires may be used. In the example of FIGS. 5 and 6, the wiring 20B located on the upper surface of the side wall portion 15 and the back surface electrode 26 forming the lower surface of the base 10 are electrically connected by the via 28. Thereby, electricity can be supplied by the back electrode 26. The back electrode 26 and the via 28 are also part of the conductive member. The side wall portion 15 may be formed in a step shape as shown in FIG. When the side wall portion 15 is stepped, the second resin member 42 covering the light emitting element 1 and the first resin member 41 can be easily formed in the base material 12.
Second Embodiment

実施形態2として、基体を構成する母材で凹部を形成する一形態の断面図を図7に示す。この図に示す発光装置は、導電部材を母材で埋設すると共に、母材で側壁部15と底部16の一部を構成し、さらに底部16の他の部分は導電部材で構成している。このようにして側壁部15と底部16で構成される凹部14に、発光素子1を実装している。この構成であれば、導電部材を屈曲させる必要がないので基体の成形が容易である。また、基体の一部である側壁部15と底部16は、別部材で構成する他、一体に形成することもできる。   As Embodiment 2, a cross-sectional view of one form in which a recess is formed by a base material constituting a base is shown in FIG. In the light emitting device shown in this figure, the conductive member is embedded in a base material, and the side wall portion 15 and the bottom portion 16 are formed of the base material, and the other portion of the bottom portion 16 is formed of the conductive member. Thus, the light emitting element 1 is mounted in the recess 14 formed by the side wall portion 15 and the bottom portion 16. With this configuration, it is easy to form the base because it is not necessary to bend the conductive member. Further, the side wall portion 15 and the bottom portion 16 which are a part of the base body can be formed integrally as well as being separate members.

また、以上の例では図1〜図3に示すように発光素子を1個のみ基体に実装した例を説明したが、本発明はこの構成に限らず、発光素子を2個以上実装した発光装置とすることもできる。一例として、発光素子1を2個備える発光装置の平面図を図8に示す。この発光装置200においても、ワイヤ30と導電部材との接続部分22の周囲に位置する導電部材を、第一樹脂部材41を被膜することで、接続部分22の周囲に位置する導電部材の硫化を抑制しワイヤ30が断線することを抑制できる。尚、実施形態1と同様に発光素子1を直接被覆する第三樹脂部材43を介して第二樹脂が発光素子1及び第一樹脂部材41を被覆してもよい。
(実施形態3)
Further, although the example in which only one light emitting element is mounted on the base as shown in FIGS. 1 to 3 has been described in the above example, the present invention is not limited to this configuration, and a light emitting device in which two or more light emitting elements are mounted It can also be done. As an example, a plan view of a light emitting device provided with two light emitting elements 1 is shown in FIG. Also in the light emitting device 200, the conductive member located around the connection portion 22 between the wire 30 and the conductive member is coated with the first resin member 41, thereby sulfurizing the conductive member located around the connection portion 22. It can control and it can control that wire 30 breaks. The second resin may cover the light emitting element 1 and the first resin member 41 through the third resin member 43 which directly covers the light emitting element 1 as in the first embodiment.
(Embodiment 3)

以上の例では、第二樹脂部材42と比べて耐光性に劣るおそれのある第一樹脂部材41を、発光素子からの光が直接照射されにくい位置に配置した。図3の例では凹部14を構成する側壁部15の上面であって、かつ発光素子1の上面よりも高い位置とすることで、光照射による第一樹脂部材41の劣化を抑制した構成とした。ただ、本発明はこの構成に限らず、第一樹脂部材を、発光素子から見て影になる位置に配置する構成を適宜利用することができる。例えば、発光素子から直接照射される光が第一樹脂部材に照射されないよう、遮光部を設けてもよい。つまり、発光素子と第一樹脂部材とを結ぶ直線上に遮光部を設けてもよい。このような例を、実施形態3として図9の断面図及び図10の平面図に示す。この図に示す発光装置300は、導電部材を有する基体10Cと、基体10C上に実装された発光素子1Cとを備える。導電部材は配線20C等が利用でき、例えば基体10Cの表面に導電部材をパターニングする。あるいは、導電部材をリードとしてもよい。また導電部材と発光素子1Cとは、ワイヤ30Cで電気的に接続される。   In the above example, the first resin member 41 which may be inferior in light resistance to the second resin member 42 is disposed at a position where the light from the light emitting element is not easily irradiated. In the example of FIG. 3, the deterioration of the first resin member 41 due to the light irradiation is suppressed by setting the upper surface of the side wall portion 15 constituting the recess 14 higher than the upper surface of the light emitting element 1. . However, this invention can utilize suitably the structure which arrange | positions a 1st resin member in the position which becomes a shadow seeing from a light emitting element not only this structure. For example, the light shielding portion may be provided so that the first resin member is not irradiated with light directly emitted from the light emitting element. That is, the light shielding portion may be provided on a straight line connecting the light emitting element and the first resin member. Such an example is shown as the third embodiment in the sectional view of FIG. 9 and the plan view of FIG. A light emitting device 300 shown in this figure includes a base 10C having a conductive member, and a light emitting element 1C mounted on the base 10C. Wiring 20C etc. can be utilized for a conductive member, for example, a conductive member is patterned on the surface of base 10C. Alternatively, the conductive member may be a lead. The conductive member and the light emitting element 1C are electrically connected by a wire 30C.

この導電部材は銀を含むため、大気中の硫化水素による銀の硫化を防止するため、保護膜32Cで被覆されることが好ましい。また、保護膜32Cで被覆されない導電部材とワイヤ30Cとの接続部分22Cの周囲に位置する導電部材を、実施形態1と同じく硫化水素に対するガスバリア性に優れた第一樹脂部材41Cで覆っている。さらに基体10Cの表面を、発光素子1Cや第一樹脂部材41Cを含めて、第二樹脂部材42Cで被覆する。この第二樹脂部材42Cは、第一樹脂部材41Cよりも硫化水素に対するガスバリア性が低い。   Since this conductive member contains silver, in order to prevent sulfidation of silver by hydrogen sulfide in the atmosphere, it is preferable to be covered with a protective film 32C. Further, the conductive member positioned around the connecting portion 22C between the conductive member not covered by the protective film 32C and the wire 30C is covered with the first resin member 41C having excellent gas barrier property to hydrogen sulfide as in the first embodiment. Furthermore, the surface of the base 10C is covered with the second resin member 42C, including the light emitting element 1C and the first resin member 41C. The second resin member 42C has lower gas barrier property to hydrogen sulfide than the first resin member 41C.

ここで、耐光性が第二樹脂部材42Cよりも劣るおそれのある第一樹脂部材41Cを、発光素子1Cの出射する光から保護するため、遮光部19Cを設けている。遮光部19Cは、発光素子1と第一樹脂部材41とを結ぶ直線上に設けられる。これにより、発光素子1Cからの一次光が遮光部19Cで遮られるため、第一樹脂部材41Cが発光素子1Cからの一次光に晒されて劣化することを抑制できる。   Here, in order to protect the first resin member 41C which may be inferior in light resistance to the second resin member 42C from the light emitted from the light emitting element 1C, the light shielding portion 19C is provided. The light shielding portion 19C is provided on a straight line connecting the light emitting element 1 and the first resin member 41. As a result, the primary light from the light emitting element 1C is blocked by the light shielding portion 19C, so that it is possible to suppress the first resin member 41C from being exposed to the primary light from the light emitting element 1C and deteriorating.

この遮光部19Cは、基体10Cを構成する部材、例えば母材12及び/又は導電部材と同じ部材としても良いし、異なる部材としても良い。また基体10Cと一体に形成することもできる。さらにこの例では遮光部19Cを板状に形成しているが、この構成に限らず、接続部分を囲むよう平面視において半円状としたり、あるいは側面視において庇状に折曲させて形成することもできる。さらに遮光部を光反射性の部材とし、発光素子と面する部分を傾斜面とするなどして、発光素子の発する光を反射する部材に兼用することもできる。   The light shielding portion 19C may be the same as or different from the member constituting the base 10C, for example, the base material 12 and / or the conductive member. It can also be formed integrally with the base 10C. Furthermore, although the light shielding portion 19C is formed in a plate shape in this example, the light shielding portion 19C is not limited to this configuration, but is formed in a semicircular shape in plan view so as to surround a connection portion or bent in a hook shape in side view It can also be done. Furthermore, the light shielding portion may be a light reflective member, and a portion facing the light emitting element may be an inclined surface, or the like to be used as a member that reflects the light emitted from the light emitting element.

なお、図4等の例では、接続部分22にボール24を介在させた構成を説明したが、本発明は該構成に限られず、ボールを用いない構成とすることもできる。例えば図12に示す変形例のように、ワイヤ30を直接配線等の導電部材と接続する構成としてもよい。この場合においても、ワイヤ30の影になる領域が生じると、従来のスパッタリングによる保護膜の成膜方法では、保護膜で覆われない領域が生じ得るところ、第一樹脂部材41をポッティングで供給することにより、確実に接続部分22及びその周辺領域を覆うことが可能となり、硫化によるワイヤ30の断線を効果的に阻止できる。なお図12は、ウェッジボンディングでワイヤを接続した例を示している。
(実施形態4に係る発光装置の製造方法)
In the example of FIG. 4 etc., although the structure which made the connection part 22 interpose the ball 24 was demonstrated, this invention is not limited to this structure, It can also be set as the structure which does not use a ball. For example, as in the modification shown in FIG. 12, the wire 30 may be connected directly to a conductive member such as a wiring. Also in this case, if a region shaded by the wire 30 is generated, the region not covered with the protective film may be generated by the conventional sputtering film forming method of the protective film, and the first resin member 41 is supplied by potting. As a result, it is possible to reliably cover the connection portion 22 and the peripheral region thereof, and the disconnection of the wire 30 due to sulfurization can be effectively prevented. FIG. 12 shows an example in which wires are connected by wedge bonding.
(Method of Manufacturing Light-Emitting Device According to Embodiment 4)

実施形態1及び実施形態2の発光装置の製造方法を、実施形態4として説明する。まず基体10の凹部14に発光素子1を実装する。この凹部14は、側壁部15と底部16で構成されており、発光素子1は凹部14の底部16に実装される。また、側壁部15の上面に導電部材が配置される。ここで、発光素子1の上面を、側壁部15の上面よりも下側に位置させる。   The manufacturing method of the light emitting device of Embodiment 1 and Embodiment 2 will be described as Embodiment 4. First, the light emitting element 1 is mounted in the recess 14 of the base 10. The recess 14 is formed of a side wall 15 and a bottom 16, and the light emitting element 1 is mounted on the bottom 16 of the recess 14. In addition, the conductive member is disposed on the upper surface of the side wall portion 15. Here, the upper surface of the light emitting element 1 is positioned below the upper surface of the side wall portion 15.

次に、発光素子1の電極と、基体10の側壁部15の上面に位置する導電部材とを、ワイヤ30を介して電気接続する。さらに、導電部材の少なくとも一部を被覆する保護膜32を形成する。保護膜32の形成方法は特に限定されないが、導電部材と保護膜32との密着性の高いスパッタリングが好ましい。そして、ワイヤ30と導電部材との接続部分22の少なくとも一部から離間して、導電部材を被覆する保護膜32を形成する。   Next, the electrode of the light emitting element 1 and the conductive member located on the upper surface of the side wall 15 of the base 10 are electrically connected via the wire 30. Furthermore, a protective film 32 covering at least a part of the conductive member is formed. The method for forming the protective film 32 is not particularly limited, but sputtering with high adhesion between the conductive member and the protective film 32 is preferable. Then, a protective film 32 for covering the conductive member is formed apart from at least a part of the connection portion 22 between the wire 30 and the conductive member.

次に、保護膜32と、接続部分22の周囲に位置する導電部材と、ワイヤ30のそれぞれの少なくとも一部を連続するように、第一樹脂部材41で被覆する。第一樹脂部材41の形成方法は特に限定されず、ポッティング、スプレー等により形成することができる。特に、ポッティングにより形成することが好ましい。これによって、スパッタリング等では難しい、ワイヤ30と導電部材との接続部分22の周囲においてワイヤ30の影になるような隙間領域にも第一樹脂部材41を形成することが容易である。また、未硬化の第一樹脂部材41には粘度を調整するためのフィラーを混合してもよい。フィラーを混合することで、流動性を制御して第一樹脂部材41を所望の領域に保持できる。   Next, at least a part of each of the protective film 32, the conductive member located around the connection portion 22, and the wire 30 is covered with the first resin member 41 so as to be continuous. The method of forming the first resin member 41 is not particularly limited, and the first resin member 41 can be formed by potting, spraying or the like. In particular, it is preferable to form by potting. As a result, it is easy to form the first resin member 41 also in a gap region which is a shadow of the wire 30 around the connection portion 22 between the wire 30 and the conductive member, which is difficult in sputtering or the like. Further, a filler for adjusting the viscosity may be mixed in the uncured first resin member 41. By mixing the filler, the flowability can be controlled to hold the first resin member 41 in a desired area.

そして、第二樹脂部材42で基体10の上面を被覆する。第二樹脂部材42は、第一樹脂部材41よりも硫化水素に対するガスバリア性の低い樹脂であり、この第二樹脂部材42でもって発光素子1と第一樹脂部材41を被覆する。このようにして、接続部分22の周囲に位置する導電部材を被覆する第一樹脂部材41に発光素子1から発される光が直接照射されにくいため、第一樹脂部材41が光により劣化されることを抑制できる。また、第一樹脂部材41の高いガスバリア性でもって接続部分22の周囲に位置する導電部材を保護し、ワイヤ30が導電部材と断線することを防止することができる。   Then, the upper surface of the base 10 is covered with the second resin member 42. The second resin member 42 is a resin having a lower gas barrier property to hydrogen sulfide than the first resin member 41, and the second resin member 42 covers the light emitting element 1 and the first resin member 41. In this manner, the first resin member 41 covering the conductive member located around the connection portion 22 is hardly irradiated with the light emitted from the light emitting element 1 directly, so the first resin member 41 is deteriorated by light Can be suppressed. Further, the conductive member located around the connection portion 22 can be protected by the high gas barrier property of the first resin member 41, and the wire 30 can be prevented from being disconnected from the conductive member.

特に、第一樹脂部材41を、フィラーで粘度調整してポッティングにより接続部分の周囲に位置する導電部材を被膜することで、スパッタリング等では影になり被膜できない部位にも第一樹脂部材41を回り込ませて被膜でき、ワイヤ30が導電部材と断線することを防止しやすくなる。   In particular, by viscosity-adjusting the first resin member 41 with a filler and coating the conductive member located around the connection portion by potting, it becomes a shadow by sputtering or the like and wraps around the first resin member 41 even to a portion which can not be coated. The coating can be made to easily prevent the wire 30 from breaking with the conductive member.

尚、第二樹脂部材42を形成する前に、第一樹脂部材41と離間し、発光素子1を直接被覆する第三樹脂部材43を形成してもよい。第三樹脂部材43の形成方法は特に限定されず、ポッティング、スプレー等により形成することができる。特に、ポッティングにより形成することが好ましい。これによって、発光素子1の表面を覆う第三樹脂部材43を形成することが容易である。第三樹脂部材43を形成することで、更にワイヤ断線を抑制することができる。
(実施形態5に係る発光装置の製造方法)
In addition, before forming the second resin member 42, the third resin member 43 which is separated from the first resin member 41 and directly covers the light emitting element 1 may be formed. The method of forming the third resin member 43 is not particularly limited, and the third resin member 43 can be formed by potting, spraying or the like. In particular, it is preferable to form by potting. Thus, it is easy to form the third resin member 43 covering the surface of the light emitting element 1. By forming the third resin member 43, wire breakage can be further suppressed.
(Method of Manufacturing Light-Emitting Device According to Embodiment 5)

次に、実施形態5に係る発光装置の製造方法として、実施形態3の発光装置の製造方法を説明する。まず基体10に発光素子1を実装する。基体10は、第一樹脂部材に発光素子1からの光が直接照射されないように遮光部を有する。尚、遮光部を有する基体10を準備して発光素子1を実装してもよいし、発光素子1を実装後に遮光部を形成してもよい。   Next, as a method of manufacturing a light emitting device according to Embodiment 5, a method of manufacturing a light emitting device of Embodiment 3 will be described. First, the light emitting element 1 is mounted on the base 10. The base 10 has a light shielding portion so that the light from the light emitting element 1 is not directly irradiated to the first resin member. The light emitting element 1 may be mounted by preparing the base 10 having the light shielding portion, or the light shielding portion may be formed after the light emitting element 1 is mounted.

ワイヤと、保護膜と、第一樹脂部材と、第二樹脂部材の形成は上述の実施形態4と同じ方法で形成できる。ただし、第一樹脂部材は発光素子1からの光が直接照射されないように形成する。つまり、発光素子1と第一樹脂部材41とを結ぶ直線上に遮光部に設けられている。なお、実施形態4と同様に第二樹脂部材42を形成する前に、第一樹脂部材41と離間し、発光素子1を直接被覆する第三樹脂部材43を形成してもよい。   The wire, the protective film, the first resin member, and the second resin member can be formed in the same manner as in the fourth embodiment described above. However, the first resin member is formed so that the light from the light emitting element 1 is not directly irradiated. That is, the light shielding portion is provided on a straight line connecting the light emitting element 1 and the first resin member 41. As in the fourth embodiment, before the second resin member 42 is formed, the third resin member 43 may be formed to be separated from the first resin member 41 and to directly cover the light emitting element 1.

本発明の実施形態に係る発光装置は、照明用光源、LEDディスプレイ、液晶表示装置などのバックライト光源、信号機、照明式スイッチ、各種センサ及び各種インジケータ、その他の一般的な民生品用光源等に好適に利用することができる。   The light emitting device according to the embodiment of the present invention includes illumination light sources, LED displays, backlight light sources such as liquid crystal display devices, traffic lights, illuminated switches, various sensors and various indicators, and other general light sources for consumer goods etc. It can be suitably used.

100、200、300 発光装置
1、1C 発光素子
10、10C 基体
11 リード;11A 第一リード;11B 第二リード
12 母材
14 凹部
15 側壁部
16 底部
19C 遮光部
20、20X 導電部材
20B、20C 配線
22、22C 接続部分
24、24X ボール
26 裏面電極
28 ビア
30、30C、30X ワイヤ
32、32C、32X 保護膜
41、41C 第一樹脂部材
42、42C 第二樹脂部材
43 第三樹脂部材
50 波長変換部材
100, 200, 300 light emitting device 1, 1C light emitting element 10, 10C base 11 lead; 11A first lead; 11B second lead 12 base material 14 recessed portion 15 side wall portion 16 bottom portion 19C light shielding portion 20, 20X conductive member 20B, 20C wiring 22, 22C connection portion 24, 24X ball 26 back surface electrode 28 via 30, 30C, 30X wire 32, 32C, 32X protective film 41, 41C first resin member 42, 42C second resin member 43 third resin member 50 wavelength conversion member

Claims (6)

銀を含む導電部材を有する基体と、
前記基体上に配置される発光素子と、
前記発光素子と、前記導電部材と、を電気的に接続するワイヤと、
前記ワイヤと前記導電部材との接続部分の少なくとも一部から離間して、前記導電部材を被覆する保護膜と、
前記保護膜と、前記接続部分の周囲に位置する前記導電部材と、前記ワイヤのそれぞれの少なくとも一部を連続して被覆する第一樹脂部材と、
前記発光素子及び前記第一樹脂部材を被覆する第二樹脂部材と、
前記基体の表面の少なくとも一部に設けた遮光部と、
を備え、
前記第一樹脂部材は、前記発光素子が発する光を反射させる第一光反射部材を含有し、前記発光素子と前記第一樹脂部材とを結ぶ直線上に前記遮光部を位置させた発光装置。
A substrate having a conductive member containing silver;
A light emitting element disposed on the substrate;
A wire electrically connecting the light emitting element and the conductive member;
A protective film covering the conductive member at a distance from at least a part of the connection portion between the wire and the conductive member;
The protective film, the conductive member positioned around the connection portion, and a first resin member continuously covering at least a part of each of the wires;
A second resin member that covers the light emitting element and the first resin member;
A light shielding portion provided on at least a part of the surface of the substrate;
Equipped with
The first resin member includes a first light reflecting member that reflects light emitted by the light emitting element, and the light shielding portion is positioned on a straight line connecting the light emitting element and the first resin member.
第二樹脂部材が、ジメチル系シリコーン樹脂又はフェニル系シリコーン樹脂である請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the second resin member is a dimethyl silicone resin or a phenyl silicone resin. 第一樹脂部材の厚さが、50μm〜200μmである請求項1又は2に記載の発光装置。   The light emitting device according to claim 1, wherein a thickness of the first resin member is 50 μm to 200 μm. 前記ワイヤが、前記遮光部を跨ぐ請求項1〜3のいずれか1項に記載の発光装置。   The light emitting device according to any one of claims 1 to 3, wherein the wire straddles the light shielding portion. 前記第二樹脂部材が、波長変換部材を含有する請求項1〜4のいずれか1項に記載の発光装置。   The light emitting device according to any one of claims 1 to 4, wherein the second resin member contains a wavelength conversion member. 前記遮光部が、前記発光素子と面する部分に傾斜面を有する請求項1〜5のいずれか1項に記載の発光装置。   The light emitting device according to any one of claims 1 to 5, wherein the light shielding portion has an inclined surface in a portion facing the light emitting element.
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JP2010010279A (en) * 2008-06-25 2010-01-14 Sharp Corp Light-emitting device and manufacturing method therefor
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