JP2019050074A - 相変化メモリセルの核形成の増進 - Google Patents
相変化メモリセルの核形成の増進 Download PDFInfo
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- JP2019050074A JP2019050074A JP2018192718A JP2018192718A JP2019050074A JP 2019050074 A JP2019050074 A JP 2019050074A JP 2018192718 A JP2018192718 A JP 2018192718A JP 2018192718 A JP2018192718 A JP 2018192718A JP 2019050074 A JP2019050074 A JP 2019050074A
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- nucleation
- memory
- cell
- pcm
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- 230000015654 memory Effects 0.000 title claims abstract description 158
- 238000010899 nucleation Methods 0.000 title claims abstract description 119
- 230000006911 nucleation Effects 0.000 title claims abstract description 119
- 230000000630 rising effect Effects 0.000 claims abstract description 41
- 239000013078 crystal Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 26
- 230000008859 change Effects 0.000 claims description 24
- 230000003698 anagen phase Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 50
- 239000012782 phase change material Substances 0.000 description 49
- 230000008569 process Effects 0.000 description 32
- 230000012010 growth Effects 0.000 description 28
- 238000002425 crystallisation Methods 0.000 description 27
- 230000008025 crystallization Effects 0.000 description 27
- 238000010586 diagram Methods 0.000 description 20
- 230000008018 melting Effects 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000009471 action Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 230000006386 memory function Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 101100191136 Arabidopsis thaliana PCMP-A2 gene Proteins 0.000 description 2
- 101100421142 Mus musculus Selenon gene Proteins 0.000 description 2
- 101100048260 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UBX2 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009790 rate-determining step (RDS) Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
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- 230000006403 short-term memory Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
本出願は、2014年7月10日出願のUS出願第14/328,536号の優先権を主張し、その全体を引用により本明細書に組み込む。
ことによって、結晶種は、ランプアップ時間中に開始でき、この領域でもSET状態が容易に達成でき、(低抵抗につながる)。よって、図10A及び図10Bは、ランプアップ信号がランプダウン信号より効率がよいことを示す。
Claims (1)
- メモリアレイ内の複数の相変化メモリ(PCM)セルをプログラムする装置であって、
前記メモリアレイ内の前記複数のPCMセルが後続の結晶成長相以前に前構造秩序化の
核形成相内にとどまる近似温度に維持し、
前記メモリアレイ内に核形成部位の形成をもたらす核形成信号を前記PCMセルに印加
することであって、前記核形成部位は、前記PCMセル内のPCM材料の分子の前記前構
造秩序化であり、前記前構造秩序化は、前記分子が前記結晶成長相に置かれる前に生じ、
前記核形成信号は非ゼロ立ち上がりエッジを有する、前記核形成信号を前記PCMセルに
印加することと、
次に、プログラミング信号を印加して、前記複数のPCMセルのうちの選択されたPC
Mセル内に所望のレベルの結晶度を達成することと、
を実現する、前記装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/328,536 | 2014-07-10 | ||
US14/328,536 US9343149B2 (en) | 2014-07-10 | 2014-07-10 | Enhancing nucleation in phase-change memory cells |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017500853A Division JP6420456B2 (ja) | 2014-07-10 | 2015-07-02 | 相変化メモリセルの核形成の増進 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019050074A true JP2019050074A (ja) | 2019-03-28 |
JP6716661B2 JP6716661B2 (ja) | 2020-07-01 |
Family
ID=55064717
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017500853A Active JP6420456B2 (ja) | 2014-07-10 | 2015-07-02 | 相変化メモリセルの核形成の増進 |
JP2018192718A Active JP6716661B2 (ja) | 2014-07-10 | 2018-10-11 | 相変化メモリセルの核形成の増進 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017500853A Active JP6420456B2 (ja) | 2014-07-10 | 2015-07-02 | 相変化メモリセルの核形成の増進 |
Country Status (6)
Country | Link |
---|---|
US (4) | US9343149B2 (ja) |
EP (2) | EP3167451B1 (ja) |
JP (2) | JP6420456B2 (ja) |
KR (2) | KR102645284B1 (ja) |
CN (1) | CN107077888B (ja) |
WO (1) | WO2016007376A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9343149B2 (en) | 2014-07-10 | 2016-05-17 | Micron Technology, Inc. | Enhancing nucleation in phase-change memory cells |
US9792246B2 (en) * | 2014-12-27 | 2017-10-17 | Intel Corporation | Lower-power scrambling with improved signal integrity |
US9583187B2 (en) | 2015-03-28 | 2017-02-28 | Intel Corporation | Multistage set procedure for phase change memory |
CN110226203B (zh) | 2017-01-20 | 2022-12-09 | 合肥睿科微电子有限公司 | Rram写入 |
US10354729B1 (en) * | 2017-12-28 | 2019-07-16 | Micron Technology, Inc. | Polarity-conditioned memory cell write operations |
KR102634840B1 (ko) * | 2018-08-24 | 2024-02-08 | 에스케이하이닉스 주식회사 | 전자 장치 |
US10839897B1 (en) | 2019-05-14 | 2020-11-17 | Sandisk Technologies Llc | Set/reset methods for crystallization improvement in phase change memories |
KR102681484B1 (ko) | 2019-10-22 | 2024-07-08 | 삼성전자주식회사 | 메모리 장치 및 이의 동작 방법 |
Citations (4)
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JP2005063647A (ja) * | 2003-08-13 | 2005-03-10 | Samsung Electronics Co Ltd | 相変化メモリのプログラミング方法および書込みドライバ回路 |
WO2007046130A1 (ja) * | 2005-10-17 | 2007-04-26 | Renesas Technology Corp. | 半導体装置 |
JP2007294638A (ja) * | 2006-04-25 | 2007-11-08 | Renesas Technology Corp | メモリセルおよび不揮発性メモリ |
JP2013046010A (ja) * | 2011-08-26 | 2013-03-04 | Hitachi Ltd | 情報記憶素子 |
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US7457146B2 (en) * | 2006-06-19 | 2008-11-25 | Qimonda North America Corp. | Memory cell programmed using a temperature controlled set pulse |
US7535756B2 (en) * | 2007-01-31 | 2009-05-19 | Macronix International Co., Ltd. | Method to tighten set distribution for PCRAM |
KR100882119B1 (ko) | 2007-07-24 | 2009-02-05 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 구동 방법 |
KR100905170B1 (ko) | 2007-08-10 | 2009-06-29 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 구동 방법 |
US8077505B2 (en) | 2008-05-07 | 2011-12-13 | Macronix International Co., Ltd. | Bipolar switching of phase change device |
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US8611135B2 (en) * | 2011-03-30 | 2013-12-17 | Agency For Science, Technology And Research | Method for programming a resistive memory cell, a method and a memory apparatus for programming one or more resistive memory cells in a memory array |
US8730708B2 (en) * | 2011-11-01 | 2014-05-20 | Micron Technology, Inc. | Performing forming processes on resistive memory |
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US9343149B2 (en) | 2014-07-10 | 2016-05-17 | Micron Technology, Inc. | Enhancing nucleation in phase-change memory cells |
-
2014
- 2014-07-10 US US14/328,536 patent/US9343149B2/en active Active
-
2015
- 2015-07-02 KR KR1020227023400A patent/KR102645284B1/ko active IP Right Grant
- 2015-07-02 JP JP2017500853A patent/JP6420456B2/ja active Active
- 2015-07-02 EP EP15819343.3A patent/EP3167451B1/en active Active
- 2015-07-02 CN CN201580043320.8A patent/CN107077888B/zh active Active
- 2015-07-02 KR KR1020177003794A patent/KR102419933B1/ko active IP Right Grant
- 2015-07-02 WO PCT/US2015/039025 patent/WO2016007376A1/en active Application Filing
- 2015-07-02 EP EP19179279.5A patent/EP3557580A1/en not_active Withdrawn
-
2016
- 2016-05-13 US US15/154,410 patent/US9990989B2/en active Active
-
2018
- 2018-05-15 US US15/980,480 patent/US10276235B2/en active Active
- 2018-10-11 JP JP2018192718A patent/JP6716661B2/ja active Active
-
2019
- 2019-04-01 US US16/372,010 patent/US10629261B2/en active Active
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JP2005063647A (ja) * | 2003-08-13 | 2005-03-10 | Samsung Electronics Co Ltd | 相変化メモリのプログラミング方法および書込みドライバ回路 |
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JP2013046010A (ja) * | 2011-08-26 | 2013-03-04 | Hitachi Ltd | 情報記憶素子 |
Also Published As
Publication number | Publication date |
---|---|
KR20220116214A (ko) | 2022-08-22 |
US20160012888A1 (en) | 2016-01-14 |
US10276235B2 (en) | 2019-04-30 |
US10629261B2 (en) | 2020-04-21 |
US20190295642A1 (en) | 2019-09-26 |
US20180268899A1 (en) | 2018-09-20 |
US9990989B2 (en) | 2018-06-05 |
US9343149B2 (en) | 2016-05-17 |
EP3557580A1 (en) | 2019-10-23 |
EP3167451A1 (en) | 2017-05-17 |
JP2017527062A (ja) | 2017-09-14 |
JP6716661B2 (ja) | 2020-07-01 |
CN107077888A (zh) | 2017-08-18 |
EP3167451A4 (en) | 2018-03-28 |
KR102419933B1 (ko) | 2022-07-13 |
CN107077888B (zh) | 2021-03-09 |
US20160254050A1 (en) | 2016-09-01 |
KR20170032368A (ko) | 2017-03-22 |
WO2016007376A1 (en) | 2016-01-14 |
KR102645284B1 (ko) | 2024-03-11 |
EP3167451B1 (en) | 2019-06-12 |
JP6420456B2 (ja) | 2018-11-07 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |