JP2019012765A - ウエーハ生成装置 - Google Patents
ウエーハ生成装置 Download PDFInfo
- Publication number
- JP2019012765A JP2019012765A JP2017128507A JP2017128507A JP2019012765A JP 2019012765 A JP2019012765 A JP 2019012765A JP 2017128507 A JP2017128507 A JP 2017128507A JP 2017128507 A JP2017128507 A JP 2017128507A JP 2019012765 A JP2019012765 A JP 2019012765A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- wafer
- unit
- grinding
- axis direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000227 grinding Methods 0.000 claims abstract description 180
- 230000032258 transport Effects 0.000 claims description 106
- 238000004140 cleaning Methods 0.000 claims description 105
- 238000003860 storage Methods 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000004299 exfoliation Methods 0.000 abstract description 5
- 230000035699 permeability Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 364
- 238000000034 method Methods 0.000 description 78
- 239000010410 layer Substances 0.000 description 54
- 239000007788 liquid Substances 0.000 description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 33
- 239000000758 substrate Substances 0.000 description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000002699 waste material Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 5
- 230000004308 accommodation Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/02—Carriages for supporting the welding or cutting element
- B23K37/0211—Carriages for supporting the welding or cutting element travelling on a guide member, e.g. rail, track
- B23K37/0235—Carriages for supporting the welding or cutting element travelling on a guide member, e.g. rail, track the guide member forming part of a portal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67736—Loading to or unloading from a conveyor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Robotics (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.43
集光点のZ軸方向位置 :インゴットの上面から300μm
第二の保持テーブルの送り速度 :120〜260mm/s
インデックス量 :250〜400μm
4:インゴット研削ユニット
6:レーザー照射ユニット
8:ウエーハ剥離ユニット
10:ウエーハ収容ユニット
12:搬送ユニット
14:第一の保持テーブル
16:研削手段
46:インゴット洗浄ユニット
60:第二の保持テーブル
62:レーザー照射手段
80:第三の保持テーブル
82:ウエーハ剥離手段
122:インゴット収容ユニット
170:インゴット
190:剥離層
192:ウエーハ
LB:パルスレーザー光線
Claims (3)
- インゴットからウエーハを生成するウエーハ生成装置であって、
インゴットを保持する第一の保持テーブルと該第一の保持テーブルに保持されたインゴットの上面を研削して平坦化する研削手段とから少なくとも構成されるインゴット研削ユニットと、
インゴットを保持する第二の保持テーブルと該第二の保持テーブルに保持されたインゴットの上面から生成すべきウエーハの厚みに相当する深さにインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し剥離層を形成するレーザー照射手段とから少なくとも構成されるレーザー照射ユニットと、
インゴットを保持する第三の保持テーブルと該第三の保持テーブルに保持されたインゴットの上面を保持し剥離層からウエーハを剥離するウエーハ剥離手段とから少なくとも構成されるウエーハ剥離ユニットと、
剥離されたウエーハを収容するウエーハ収容ユニットと、
該インゴット研削ユニットと該レーザー照射ユニットと該ウエーハ剥離ユニットとの間でインゴットを搬送する搬送ユニットと、
から少なくとも構成されるウエーハ生成装置。 - インゴットを収容するインゴット収容ユニットを含み、
該搬送ユニットは該インゴット収容ユニットから該レーザー照射ユニットにインゴットを搬送する請求項1記載のウエーハ生成装置。 - インゴットを洗浄するインゴット洗浄ユニットを含み、
該搬送ユニットは、該インゴット研削ユニットから該インゴット洗浄ユニットにインゴットを搬送すると共に、該インゴット洗浄ユニットから該レーザー照射ユニットにインゴットを搬送する請求項1記載のウエーハ生成装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017128507A JP6976745B2 (ja) | 2017-06-30 | 2017-06-30 | ウエーハ生成装置 |
MYPI2018702268A MY191675A (en) | 2017-06-30 | 2018-06-08 | Wafer producing apparatus |
SG10201804904YA SG10201804904YA (en) | 2017-06-30 | 2018-06-08 | Wafer producing apparatus |
KR1020180068731A KR102515687B1 (ko) | 2017-06-30 | 2018-06-15 | 웨이퍼 생성 장치 |
DE102018210110.8A DE102018210110A1 (de) | 2017-06-30 | 2018-06-21 | Waferherstellungsvorrichtung |
CN201810658962.4A CN109216159B (zh) | 2017-06-30 | 2018-06-25 | 晶片生成装置 |
US16/020,414 US10916460B2 (en) | 2017-06-30 | 2018-06-27 | Wafer producing apparatus |
TW107122323A TWI758505B (zh) | 2017-06-30 | 2018-06-28 | 晶圓生成裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017128507A JP6976745B2 (ja) | 2017-06-30 | 2017-06-30 | ウエーハ生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019012765A true JP2019012765A (ja) | 2019-01-24 |
JP6976745B2 JP6976745B2 (ja) | 2021-12-08 |
Family
ID=64662077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017128507A Active JP6976745B2 (ja) | 2017-06-30 | 2017-06-30 | ウエーハ生成装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10916460B2 (ja) |
JP (1) | JP6976745B2 (ja) |
KR (1) | KR102515687B1 (ja) |
CN (1) | CN109216159B (ja) |
DE (1) | DE102018210110A1 (ja) |
MY (1) | MY191675A (ja) |
SG (1) | SG10201804904YA (ja) |
TW (1) | TWI758505B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7442332B2 (ja) | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7128067B2 (ja) * | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
JP7210292B2 (ja) * | 2019-01-15 | 2023-01-23 | 株式会社ディスコ | ウエーハの生成方法 |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7464472B2 (ja) * | 2020-07-17 | 2024-04-09 | 株式会社ディスコ | 加工装置 |
CN113352230A (zh) * | 2021-06-17 | 2021-09-07 | 广东工业大学 | 一种金刚石晶片超精密加工方法及装置 |
CN113793822B (zh) * | 2021-11-17 | 2022-04-12 | 乐山高测新能源科技有限公司 | 硅棒处理系统 |
CN115223851B (zh) * | 2022-09-21 | 2022-12-09 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 一种机械式晶片分离方法及装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015008195A (ja) * | 2013-06-25 | 2015-01-15 | 株式会社ディスコ | ウエーハ加工装置 |
JP2015030005A (ja) * | 2013-08-01 | 2015-02-16 | 株式会社ディスコ | 加工装置 |
JP2016124015A (ja) * | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
JP2016146448A (ja) * | 2015-02-09 | 2016-08-12 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017005008A (ja) * | 2015-06-05 | 2017-01-05 | 株式会社ディスコ | ウエーハの生成方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP4464113B2 (ja) * | 2003-11-27 | 2010-05-19 | 株式会社ディスコ | ウエーハの加工装置 |
JP2007235069A (ja) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
JP5324180B2 (ja) * | 2008-10-07 | 2013-10-23 | 株式会社ディスコ | レーザ加工方法およびレーザ加工装置 |
JP5619559B2 (ja) * | 2010-10-12 | 2014-11-05 | 株式会社ディスコ | 加工装置 |
JP5917862B2 (ja) | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5842920B2 (ja) * | 2011-09-15 | 2016-01-13 | 新東工業株式会社 | 硬脆性材料の研削・研磨加工システム、および研削・研磨方法 |
JP6506520B2 (ja) * | 2014-09-16 | 2019-04-24 | 株式会社ディスコ | SiCのスライス方法 |
JP6546823B2 (ja) * | 2015-09-29 | 2019-07-17 | 株式会社ディスコ | レーザー加工装置 |
-
2017
- 2017-06-30 JP JP2017128507A patent/JP6976745B2/ja active Active
-
2018
- 2018-06-08 MY MYPI2018702268A patent/MY191675A/en unknown
- 2018-06-08 SG SG10201804904YA patent/SG10201804904YA/en unknown
- 2018-06-15 KR KR1020180068731A patent/KR102515687B1/ko active IP Right Grant
- 2018-06-21 DE DE102018210110.8A patent/DE102018210110A1/de active Pending
- 2018-06-25 CN CN201810658962.4A patent/CN109216159B/zh active Active
- 2018-06-27 US US16/020,414 patent/US10916460B2/en active Active
- 2018-06-28 TW TW107122323A patent/TWI758505B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015008195A (ja) * | 2013-06-25 | 2015-01-15 | 株式会社ディスコ | ウエーハ加工装置 |
JP2015030005A (ja) * | 2013-08-01 | 2015-02-16 | 株式会社ディスコ | 加工装置 |
JP2016124015A (ja) * | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
JP2016146448A (ja) * | 2015-02-09 | 2016-08-12 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017005008A (ja) * | 2015-06-05 | 2017-01-05 | 株式会社ディスコ | ウエーハの生成方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7442332B2 (ja) | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
Also Published As
Publication number | Publication date |
---|---|
SG10201804904YA (en) | 2019-01-30 |
CN109216159A (zh) | 2019-01-15 |
KR102515687B1 (ko) | 2023-03-29 |
TW201904703A (zh) | 2019-02-01 |
MY191675A (en) | 2022-07-07 |
KR20190003345A (ko) | 2019-01-09 |
CN109216159B (zh) | 2024-02-02 |
TWI758505B (zh) | 2022-03-21 |
JP6976745B2 (ja) | 2021-12-08 |
US10916460B2 (en) | 2021-02-09 |
US20190006212A1 (en) | 2019-01-03 |
DE102018210110A1 (de) | 2019-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6976745B2 (ja) | ウエーハ生成装置 | |
JP6904793B2 (ja) | ウエーハ生成装置 | |
JP7009194B2 (ja) | ウエーハ生成装置および搬送トレー | |
JP6946153B2 (ja) | ウエーハの生成方法およびウエーハ生成装置 | |
JP6341639B2 (ja) | 加工装置 | |
JP7164396B2 (ja) | ウエーハ生成装置 | |
JP2019029382A (ja) | ウエーハの生成方法およびウエーハ生成装置 | |
US20080064187A1 (en) | Production Method for Stacked Device | |
JP2007235069A (ja) | ウェーハ加工方法 | |
JP2007149860A (ja) | 基板の分割方法および分割装置 | |
JP2009253244A (ja) | ウエーハの搬出方法 | |
JP2022090272A (ja) | ウエーハ生成装置 | |
JP2010162665A (ja) | 加工装置 | |
JP2006344630A (ja) | 切削装置 | |
JP6635864B2 (ja) | 加工装置 | |
JP2004319698A (ja) | スタッドバンプボンダー | |
JP2010023163A (ja) | 加工装置 | |
JP5930692B2 (ja) | バイト切削装置 | |
JP2023170881A (ja) | 剥離装置 | |
JP2023170392A (ja) | 剥離装置 | |
CN116890267A (zh) | 去疵层形成装置和加工装置 | |
JP2022029691A (ja) | 洗浄機構および加工装置 | |
JP5264525B2 (ja) | 研削装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200406 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210316 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210824 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211006 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211019 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211110 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6976745 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |